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DE60323909D1 - Teilchenoptischer Apparat und seine Verwendung als elektronenmikroskopisches System - Google Patents

Teilchenoptischer Apparat und seine Verwendung als elektronenmikroskopisches System

Info

Publication number
DE60323909D1
DE60323909D1 DE60323909T DE60323909T DE60323909D1 DE 60323909 D1 DE60323909 D1 DE 60323909D1 DE 60323909 T DE60323909 T DE 60323909T DE 60323909 T DE60323909 T DE 60323909T DE 60323909 D1 DE60323909 D1 DE 60323909D1
Authority
DE
Germany
Prior art keywords
electron
particle
microscopic system
optic apparatus
optic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60323909T
Other languages
English (en)
Inventor
Oliver Dr Kienzle
Rainer Dr Knippelmeyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss NTS GmbH
Original Assignee
Carl Zeiss NTS GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10237141A external-priority patent/DE10237141A1/de
Priority claimed from DE2002137297 external-priority patent/DE10237297A1/de
Application filed by Carl Zeiss NTS GmbH filed Critical Carl Zeiss NTS GmbH
Application granted granted Critical
Publication of DE60323909D1 publication Critical patent/DE60323909D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/145—Combinations of electrostatic and magnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1202—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/121—Lenses electrostatic characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/121—Lenses electrostatic characterised by shape
    • H01J2237/1215—Annular electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1504—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H01J2237/1516—Multipoles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/303—Electron or ion optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
DE60323909T 2002-08-13 2003-08-11 Teilchenoptischer Apparat und seine Verwendung als elektronenmikroskopisches System Expired - Lifetime DE60323909D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10237141A DE10237141A1 (de) 2002-08-13 2002-08-13 Strahlführungssystem, Abbildungsverfahren und Elektronenmikroskopiesystem
DE2002137297 DE10237297A1 (de) 2002-08-14 2002-08-14 Teilchenoptische Vorrichtung, Elektronenmikroskopiesystem und Lithogrphiesystem

Publications (1)

Publication Number Publication Date
DE60323909D1 true DE60323909D1 (de) 2008-11-20

Family

ID=30771728

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60323909T Expired - Lifetime DE60323909D1 (de) 2002-08-13 2003-08-11 Teilchenoptischer Apparat und seine Verwendung als elektronenmikroskopisches System

Country Status (4)

Country Link
US (1) US6914249B2 (de)
EP (1) EP1389797B1 (de)
JP (1) JP2004134388A (de)
DE (1) DE60323909D1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10232689A1 (de) * 2002-07-18 2004-02-05 Leo Elektronenmikroskopie Gmbh Mit Strahlen geladener Teilchen arbeitende Anwendungen
EP1956631B1 (de) * 2002-12-17 2012-06-20 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Linsensystem für mehrere geladene Teilchenstrahlen
US7109486B1 (en) * 2004-06-18 2006-09-19 Novelx, Inc. Layered electron beam column and method of use thereof
EP1779403A4 (de) * 2004-07-05 2009-05-06 Cebt Co Ltd Verfahren zur steuerung eines elektronenstrahls in einer mehrfach-mikrosäule und mehrfach-mikrosäule damit
US7598594B2 (en) * 2004-12-20 2009-10-06 Electronics And Telecommunications Research Institute Wafer-scale microcolumn array using low temperature co-fired ceramic substrate
DE602004026463D1 (de) * 2004-12-30 2010-05-20 Integrated Circuit Testing Mehrfach-Linsenanordnung und Teilchenstrahlgerät mit selbiger
EP1930937A4 (de) * 2005-08-30 2010-10-06 Fang Xiang Ionenfalle, mehrfach-elektroden-polsystem und elektrodenpol zur massenspektrometrischen analyse
EP1777728A1 (de) * 2005-10-20 2007-04-25 Carl Zeiss SMS GmbH Lithographisches System
US20080054180A1 (en) * 2006-05-25 2008-03-06 Charles Silver Apparatus and method of detecting secondary electrons
WO2009039884A1 (en) * 2007-09-26 2009-04-02 Ion Beam Applications S.A. Particle beam transport apparatus and method of transporting a particle beam with small beam spot size
NL1036912C2 (en) * 2009-04-29 2010-11-01 Mapper Lithography Ip Bv Charged particle optical system comprising an electrostatic deflector.
TWI497557B (zh) 2009-04-29 2015-08-21 Mapper Lithography Ip Bv 包含靜電偏轉器的帶電粒子光學系統
DE102010047331B4 (de) 2010-10-01 2019-02-21 Carl Zeiss Microscopy Gmbh Ionenstrahlgerät und Verfahren zum Betreiben desselben
US8519353B2 (en) 2010-12-29 2013-08-27 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling an asymmetric electrostatic lens about a central ray trajectory of an ion beam
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
EP2672502B1 (de) * 2012-06-06 2017-08-09 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Elektronenoptisches System mit High-Brightness-Elektronenkanone mit Kondensatorlinse mit variabler Achse
EP2779205B1 (de) * 2013-03-15 2017-10-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Scan-Deflektor mit hohem Durchsatz und Herstellungsverfahren dafür
CN105874559B (zh) * 2013-11-14 2018-11-23 迈普尔平版印刷Ip有限公司 多电极电子光学系统
US11031894B2 (en) * 2017-08-15 2021-06-08 Quanten Technologies, Inc. Motor system with multiple connection bars
KR102662670B1 (ko) * 2019-04-06 2024-05-03 에이에스엠엘 네델란즈 비.브이. 전압 발생기가 내장된 mems 이미지 형성 요소
JP2023158784A (ja) * 2022-04-19 2023-10-31 株式会社ニューフレアテクノロジー 電磁レンズ及び電子源機構

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
FR2076567A5 (de) 1970-01-20 1971-10-15 Commissariat Energie Atomique
NL7100609A (de) * 1970-02-07 1971-08-10
GB2137803B (en) * 1983-03-26 1986-11-12 Kratos Ltd Improvements relating to electrostatic lenses
GB8401578D0 (en) * 1984-01-19 1984-02-22 Cleaver J R A Ion and electron beam electrostatic and magnetic lens systems
JPH063720B2 (ja) * 1986-01-08 1994-01-12 日本電子株式会社 集束イオンビ−ム装置
ATE91822T1 (de) 1986-04-24 1993-08-15 Integrated Circuit Testing Elektrostatisch-magnetische-linse fuer korpuskularstrahlgeraete.
EP0274622B1 (de) * 1986-12-12 1990-11-07 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Detektoranordnung mit einem Detektorobjektiv für Korpuskularstrahlgeräte
US4994336A (en) 1988-05-31 1991-02-19 Siemens Aktiengesellschaft Method for manufacturing a control plate for a lithographic device
US4963748A (en) * 1988-06-06 1990-10-16 Arizona Technology Development Corporation (Atdc) Composite multipurpose multipole electrostatic optical structure and a synthesis method for minimizing aberrations
US6353231B1 (en) * 1998-08-31 2002-03-05 Nikon Corporation Pinhole detector for electron intensity distribution
US6288401B1 (en) 1999-07-30 2001-09-11 Etec Systems, Inc. Electrostatic alignment of a charged particle beam
JP4947841B2 (ja) * 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
JP4741115B2 (ja) * 2000-08-14 2011-08-03 イーリス エルエルシー リソグラフィ投影装置およびデバイス製造方法
EP1182684B1 (de) 2000-08-14 2008-07-23 eLith LLC Lithographischer Apparat
TW579536B (en) 2001-07-02 2004-03-11 Zeiss Carl Semiconductor Mfg Examining system for the particle-optical imaging of an object, deflector for charged particles as well as method for the operation of the same
DE10131931A1 (de) 2001-07-02 2003-01-16 Zeiss Carl Untersuchungssystem zum teilchenoptischen Abbilden eines Objekts, Ablenkvorrichtung für geladene Teilchen sowie Verfahren zum Betrieb derselben
DE10136190A1 (de) 2001-07-25 2003-02-06 Ceos Gmbh Schlitzlinsenanordnung für Teilchenstrahlen
DE10161680A1 (de) 2001-12-14 2003-06-26 Ceos Gmbh Linsenanordnung mit lateral verschiebbarer optischer Achse für Teilchenstrahlen

Also Published As

Publication number Publication date
US6914249B2 (en) 2005-07-05
EP1389797B1 (de) 2008-10-08
EP1389797A3 (de) 2005-08-03
EP1389797A2 (de) 2004-02-18
US20040105160A1 (en) 2004-06-03
JP2004134388A (ja) 2004-04-30

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Legal Events

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