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DE60321525D1 - Verfahren, Inspektionssystem, Rechnerprogramm und Referenzsubstrat zum Erkennen von Maskenfehlern - Google Patents

Verfahren, Inspektionssystem, Rechnerprogramm und Referenzsubstrat zum Erkennen von Maskenfehlern

Info

Publication number
DE60321525D1
DE60321525D1 DE60321525T DE60321525T DE60321525D1 DE 60321525 D1 DE60321525 D1 DE 60321525D1 DE 60321525 T DE60321525 T DE 60321525T DE 60321525 T DE60321525 T DE 60321525T DE 60321525 D1 DE60321525 D1 DE 60321525D1
Authority
DE
Germany
Prior art keywords
computer program
inspection system
reference substrate
mask errors
detecting mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60321525T
Other languages
English (en)
Inventor
Der Werf Jan Evert Van
Auke Jan Mud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Application granted granted Critical
Publication of DE60321525D1 publication Critical patent/DE60321525D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
DE60321525T 2002-10-28 2003-10-27 Verfahren, Inspektionssystem, Rechnerprogramm und Referenzsubstrat zum Erkennen von Maskenfehlern Expired - Fee Related DE60321525D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02257465 2002-10-28

Publications (1)

Publication Number Publication Date
DE60321525D1 true DE60321525D1 (de) 2008-07-24

Family

ID=32668904

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60321525T Expired - Fee Related DE60321525D1 (de) 2002-10-28 2003-10-27 Verfahren, Inspektionssystem, Rechnerprogramm und Referenzsubstrat zum Erkennen von Maskenfehlern

Country Status (7)

Country Link
US (1) US7307712B2 (de)
JP (1) JP2004191973A (de)
KR (1) KR20040038756A (de)
CN (2) CN1501174A (de)
DE (1) DE60321525D1 (de)
SG (1) SG128449A1 (de)
TW (1) TWI245169B (de)

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KR100684104B1 (ko) * 2005-08-02 2007-02-16 삼성전자주식회사 결함 검사 방법 및 이를 수행하기 위한 결함 검사 장치
KR100856579B1 (ko) * 2007-01-18 2008-09-04 홍운식 웨이퍼의 노광 에너지 정보를 축적하는 시스템에 의해 누적된 웨이퍼의 노광 에너지 정보를 이용한 노광용 마스크의 관리방법
CN101344715B (zh) * 2007-07-10 2011-07-13 联华电子股份有限公司 光掩模检测方法与在线即时光掩模检测方法
CN101546112B (zh) * 2008-03-25 2011-04-20 中芯国际集成电路制造(上海)有限公司 一种更替掩模版的方法
US8670106B2 (en) 2008-09-23 2014-03-11 Pinebrook Imaging, Inc. Optical imaging writer system
US8390786B2 (en) 2008-09-23 2013-03-05 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8390781B2 (en) 2008-09-23 2013-03-05 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8395752B2 (en) 2008-09-23 2013-03-12 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8041106B2 (en) * 2008-12-05 2011-10-18 Kla-Tencor Corp. Methods and systems for detecting defects on a reticle
CN102129164B (zh) * 2010-01-15 2012-08-22 中芯国际集成电路制造(上海)有限公司 掩膜版缺陷的判断方法及判断系统
CN102193302A (zh) * 2010-03-03 2011-09-21 中芯国际集成电路制造(上海)有限公司 一种掩膜图形缺陷的检测方法及系统
CN104317159A (zh) * 2010-03-03 2015-01-28 中芯国际集成电路制造(上海)有限公司 一种掩膜图形缺陷的检测方法及系统
CN102193306B (zh) * 2010-03-11 2012-09-05 中芯国际集成电路制造(上海)有限公司 设计光掩膜版的方法
US8502544B1 (en) * 2012-05-14 2013-08-06 Taiwan Mask Corporation Method for testing mask articles
US9607371B2 (en) 2013-04-01 2017-03-28 Kla-Tencor Corporation Mesoscopic defect detection for reticle inspection
WO2014165547A1 (en) * 2013-04-01 2014-10-09 Kla-Tencor Corporation Mesoscopic defect detection for reticle inspection
EP3323018B1 (de) * 2015-07-16 2020-09-02 ASML Netherlands B.V. Prüfsubstrat und prüfverfahren
DE102017203879B4 (de) * 2017-03-09 2023-06-07 Carl Zeiss Smt Gmbh Verfahren zum Analysieren einer defekten Stelle einer photolithographischen Maske
US10964014B2 (en) * 2017-10-30 2021-03-30 Taiwan Semiconductor Manufacturing Company, Ltd. Defect detecting method and defect detecting system
EP3594750A1 (de) * 2018-07-10 2020-01-15 ASML Netherlands B.V. Verdeckte fehlererkennung und epe-schätzung auf basis der extrahierten 3d-informationen aus e-beam-bildern
CN110824851B (zh) * 2018-08-13 2021-06-29 台湾积体电路制造股份有限公司 光刻设备的洁净度的检测方法以及反射式光掩模
US10830709B2 (en) * 2018-09-28 2020-11-10 Onto Innovation Inc. Interferometer with pixelated phase shift mask

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Publication number Priority date Publication date Assignee Title
JPS594019A (ja) 1982-06-30 1984-01-10 Fujitsu Ltd パタ−ン比較検査方法
JPS59108318A (ja) 1982-12-14 1984-06-22 Oki Electric Ind Co Ltd １チツプレテイクルマスクの検査方法
DE3347645C1 (de) * 1983-12-30 1985-10-10 Dr.-Ing. Ludwig Pietzsch Gmbh & Co, 7505 Ettlingen Verfahren und Einrichtung zum opto-elektronischen Pruefen eines Flaechenmusters an einem Objekt
JPS63122119A (ja) 1986-11-11 1988-05-26 Ricoh Co Ltd 縮小投影露光装置用フオトマスクの検査方法
JP3069417B2 (ja) * 1991-11-21 2000-07-24 シャープ株式会社 位相シフトマスクの検査方法
JPH07229846A (ja) 1994-02-22 1995-08-29 Sony Corp 欠陥検査装置
JP3515199B2 (ja) * 1995-01-06 2004-04-05 大日本スクリーン製造株式会社 欠陥検査装置
SE515553C2 (sv) * 1996-06-28 2001-08-27 Ericsson Telefon Ab L M Kretskortstest
JP2867971B2 (ja) 1996-08-16 1999-03-10 日本電気株式会社 マスクの検査方法およびその検査装置
US6895109B1 (en) * 1997-09-04 2005-05-17 Texas Instruments Incorporated Apparatus and method for automatically detecting defects on silicon dies on silicon wafers
US6252412B1 (en) * 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
US6563586B1 (en) * 1999-02-01 2003-05-13 Therma-Wave, Inc. Wafer metrology apparatus and method
US6426168B1 (en) * 2000-08-15 2002-07-30 International Business Machines Corporation Method of inspecting photo masks
US6634018B2 (en) * 2000-08-24 2003-10-14 Texas Instruments Incorporated Optical proximity correction
US6630996B2 (en) * 2000-11-15 2003-10-07 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
US20020121915A1 (en) 2001-03-05 2002-09-05 Agere Systems Guardian Corp. Automated pattern clustering detection for wafer probe maps
US6643006B1 (en) * 2001-12-13 2003-11-04 Inspex, Inc. Method and system for reviewing a semiconductor wafer using at least one defect sampling condition
JP3647416B2 (ja) * 2002-01-18 2005-05-11 Ｎｅｃエレクトロニクス株式会社 パターン検査装置及びその方法
US6691052B1 (en) * 2002-01-30 2004-02-10 Kla-Tencor Corporation Apparatus and methods for generating an inspection reference pattern
AU2003247868A1 (en) 2002-07-15 2004-02-02 Kla-Tencor Technologies Corp. Defect inspection methods that include acquiring aerial images of a reticle for different lithographic process variables
US6855463B2 (en) * 2002-08-27 2005-02-15 Photronics, Inc. Photomask having an intermediate inspection film layer
US6967711B2 (en) * 2004-03-09 2005-11-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
CN101520609A (zh) 2009-09-02
SG128449A1 (en) 2007-01-30
KR20040038756A (ko) 2004-05-08
US20040130711A1 (en) 2004-07-08
JP2004191973A (ja) 2004-07-08
CN1501174A (zh) 2004-06-02
US7307712B2 (en) 2007-12-11
TWI245169B (en) 2005-12-11
TW200417824A (en) 2004-09-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee