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DE60315483D1 - Kapselungsstruktur für abbildungsdetektoren - Google Patents

Kapselungsstruktur für abbildungsdetektoren

Info

Publication number
DE60315483D1
DE60315483D1 DE60315483T DE60315483T DE60315483D1 DE 60315483 D1 DE60315483 D1 DE 60315483D1 DE 60315483 T DE60315483 T DE 60315483T DE 60315483 T DE60315483 T DE 60315483T DE 60315483 D1 DE60315483 D1 DE 60315483D1
Authority
DE
Germany
Prior art keywords
detectors
photo
sub
capacity structure
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60315483T
Other languages
English (en)
Other versions
DE60315483T2 (de
Inventor
Iiro Hietanen
Mikko Juntunen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Detection Technology Oy
Original Assignee
Detection Technology Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Detection Technology Oy filed Critical Detection Technology Oy
Publication of DE60315483D1 publication Critical patent/DE60315483D1/de
Application granted granted Critical
Publication of DE60315483T2 publication Critical patent/DE60315483T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1895X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12043Photo diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Packaging Of Machine Parts And Wound Products (AREA)
  • Basic Packing Technique (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Light Receiving Elements (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
DE2003615483 2002-08-15 2003-08-12 Kapselungsstruktur für abbildungsdetektoren Expired - Fee Related DE60315483T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0219044A GB2392308B (en) 2002-08-15 2002-08-15 Packaging structure for imaging detectors
GB0219044 2002-08-15
PCT/FI2003/000602 WO2004017429A1 (en) 2002-08-15 2003-08-12 Packaging structure for imaging detectors

Publications (2)

Publication Number Publication Date
DE60315483D1 true DE60315483D1 (de) 2007-09-20
DE60315483T2 DE60315483T2 (de) 2008-04-30

Family

ID=9942401

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2003615483 Expired - Fee Related DE60315483T2 (de) 2002-08-15 2003-08-12 Kapselungsstruktur für abbildungsdetektoren

Country Status (9)

Country Link
US (1) US7375340B2 (de)
EP (1) EP1547161B1 (de)
JP (1) JP4279253B2 (de)
CN (1) CN100407445C (de)
AT (1) ATE369629T1 (de)
AU (1) AU2003254522A1 (de)
DE (1) DE60315483T2 (de)
GB (1) GB2392308B (de)
WO (1) WO2004017429A1 (de)

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US20080080666A1 (en) * 2004-09-29 2008-04-03 Koninklijke Philips Electronics N.V. Computed Tomography Imaging With Rotated Detection Modules
US7505554B2 (en) * 2005-07-25 2009-03-17 Digimd Corporation Apparatus and methods of an X-ray and tomosynthesis and dual spectra machine
US7576371B1 (en) 2006-03-03 2009-08-18 Array Optronix, Inc. Structures and methods to improve the crosstalk between adjacent pixels of back-illuminated photodiode arrays
US7682930B2 (en) 2006-06-09 2010-03-23 Aptina Imaging Corporation Method of forming elevated photosensor and resulting structure
KR100922929B1 (ko) * 2007-12-28 2009-10-22 주식회사 동부하이텍 이미지센서 및 그 제조방법
US8049292B2 (en) * 2008-03-27 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2010210590A (ja) * 2009-03-12 2010-09-24 Fujifilm Corp 放射線検出器
US8274127B2 (en) * 2009-06-30 2012-09-25 Sumitomo Electric Industries, Ltd. Photodiode array for image pickup device
EP3281040B1 (de) 2015-04-07 2021-11-24 Shenzhen Xpectvision Technology Co., Ltd. Halbleiterröntgendetektor
CN108271415B (zh) 2015-04-07 2019-03-05 深圳帧观德芯科技有限公司 半导体x射线检测器
EP3281041B1 (de) 2015-04-07 2020-06-10 Shenzhen Xpectvision Technology Co., Ltd. Verfahren zur herstellung eines halbleiterröntgendetektors
EP3320371A4 (de) 2015-06-10 2019-03-06 Shenzhen Xpectvision Technology Co., Ltd. Detektor für die röntgenfluoreszenz
EP3320374B1 (de) 2015-07-09 2020-05-20 Shenzhen Xpectvision Technology Co., Ltd. Verfahren zur herstellung eines halbleiterröntgendetektors
WO2017031740A1 (en) 2015-08-27 2017-03-02 Shenzhen Xpectvision Technology Co., Ltd. X-ray imaging with a detector capable of resolving photon energy
WO2017041221A1 (en) * 2015-09-08 2017-03-16 Shenzhen Xpectvision Technology Co., Ltd. Methods for making an x-ray detector
KR102163117B1 (ko) * 2015-10-16 2020-10-07 한국전자기술연구원 3차원 레이저 스캐닝 장치 및 이를 포함하는 3차원 레이저 스캐닝 시스템
US10283557B2 (en) * 2015-12-31 2019-05-07 General Electric Company Radiation detector assembly
US10121771B2 (en) * 2016-03-02 2018-11-06 Sol Chip Ltd. Target integrated circuit combined with a plurality of photovoltaic cells
JP6879476B2 (ja) * 2016-11-01 2021-06-02 住友電工デバイス・イノベーション株式会社 光モジュール
EP3658963A4 (de) 2017-07-26 2021-03-03 Shenzhen Xpectvision Technology Co., Ltd. Röntgendetektor
JP6932580B2 (ja) 2017-08-04 2021-09-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
CN109738792B (zh) * 2018-12-16 2020-06-12 深圳先进技术研究院 SiPM阵列的信号读出方法、装置及SiPM阵列模块
CN114902081A (zh) * 2020-02-26 2022-08-12 深圳帧观德芯科技有限公司 辐射检测器
EP3901612B1 (de) 2020-04-23 2024-06-12 Sensirion AG Integrierter partikelsensor mit hohlraum
CN115172353A (zh) * 2022-06-30 2022-10-11 重庆秦嵩科技有限公司 一种基于光电混合集成的4通道光电探测器
CN118131175A (zh) * 2022-11-28 2024-06-04 上海禾赛科技有限公司 探测器阵列、芯片、光接收模组、激光雷达、探测器阵列控制方法

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US4826777A (en) * 1987-04-17 1989-05-02 The Standard Oil Company Making a photoresponsive array
US4785191A (en) * 1987-04-17 1988-11-15 Stemcor Corporation Interconnected array of photosensors for simultaneously sensing light intensities at each of a number of locations
US5352994A (en) * 1987-10-06 1994-10-04 The Board Of Trustees Of The Leland Stanford Junior University Gallium arsenide monolithically integrated nonlinear transmission line impedance transformer
JPH03265171A (ja) * 1990-03-14 1991-11-26 Nippon Steel Corp イメージセンサ及び光電変換装置
US5227656A (en) * 1990-11-06 1993-07-13 Cincinnati Electronics Corporation Electro-optical detector array
GB9226890D0 (en) * 1992-12-23 1993-02-17 Philips Electronics Uk Ltd An imaging device
US5352884A (en) * 1993-04-14 1994-10-04 General Electric Corporation Method and apparatus for providing offset for light detector
KR987001092A (ko) * 1994-12-23 1998-04-30 엘. 린그렌 클린턴 반도체 감마 선 카메라 및 의학 화상 시스템(Semiconductor Gamma-Ray Camera and Medical Imaging System)
US6046454A (en) * 1995-10-13 2000-04-04 Digirad Corporation Semiconductor radiation detector with enhanced charge collection
US5635718A (en) * 1996-01-16 1997-06-03 Minnesota Mining And Manufacturing Company Multi-module radiation detecting device and fabrication method
JP2840941B2 (ja) * 1997-04-02 1998-12-24 株式会社日立メディコ 多素子放射線検出器及びその製造方法
US6369853B1 (en) * 1997-11-13 2002-04-09 Foveon, Inc. Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications
US6144718A (en) * 1997-11-26 2000-11-07 General Electric Company Flexible cable connection for detector module
JP2002502129A (ja) * 1998-02-02 2002-01-22 ユニアックス コーポレイション 切替え可能な光電感度を有する有機ダイオード
US6586812B1 (en) * 1999-04-13 2003-07-01 Agilent Technologies, Inc. Isolation of alpha silicon diode sensors through ion implantation
JP2003084066A (ja) * 2001-04-11 2003-03-19 Nippon Kessho Kogaku Kk 放射線検出器用部品、放射線検出器および放射線検出装置

Also Published As

Publication number Publication date
GB2392308A (en) 2004-02-25
ATE369629T1 (de) 2007-08-15
CN100407445C (zh) 2008-07-30
WO2004017429A1 (en) 2004-02-26
GB0219044D0 (en) 2002-09-25
AU2003254522A1 (en) 2004-03-03
GB2392308B (en) 2006-10-25
US7375340B2 (en) 2008-05-20
US20060065841A1 (en) 2006-03-30
JP4279253B2 (ja) 2009-06-17
GB2392308A8 (en) 2006-09-05
JP2005539373A (ja) 2005-12-22
EP1547161A1 (de) 2005-06-29
EP1547161B1 (de) 2007-08-08
DE60315483T2 (de) 2008-04-30
CN1675780A (zh) 2005-09-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee