DE60307408D1 - Fotoelektrische Sensoranordnung und Herstellungsverfahren dafür - Google Patents
Fotoelektrische Sensoranordnung und Herstellungsverfahren dafürInfo
- Publication number
- DE60307408D1 DE60307408D1 DE60307408T DE60307408T DE60307408D1 DE 60307408 D1 DE60307408 D1 DE 60307408D1 DE 60307408 T DE60307408 T DE 60307408T DE 60307408 T DE60307408 T DE 60307408T DE 60307408 D1 DE60307408 D1 DE 60307408D1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- depositing
- insulator
- pads
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000012212 insulator Substances 0.000 abstract 9
- 238000000151 deposition Methods 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 6
- 239000004020 conductor Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 238000001465 metallisation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/148—Shapes of potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Facsimile Heads (AREA)
- Basic Packing Technique (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0215023A FR2848027B1 (fr) | 2002-11-29 | 2002-11-29 | Dispositif de detection photo-electrique et procede pour sa realisation |
| FR0215023 | 2002-11-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60307408D1 true DE60307408D1 (de) | 2006-09-21 |
| DE60307408T2 DE60307408T2 (de) | 2006-12-07 |
Family
ID=32309832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60307408T Expired - Lifetime DE60307408T2 (de) | 2002-11-29 | 2003-11-14 | Fotoelektrische Sensoranordnung und Herstellungsverfahren dafür |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7049673B2 (de) |
| EP (1) | EP1434270B1 (de) |
| JP (1) | JP4629328B2 (de) |
| AT (1) | ATE336078T1 (de) |
| DE (1) | DE60307408T2 (de) |
| FR (1) | FR2848027B1 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100837556B1 (ko) * | 2007-03-19 | 2008-06-12 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그의 제조방법 |
| US20100044676A1 (en) | 2008-04-18 | 2010-02-25 | Invisage Technologies, Inc. | Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals |
| EP2667412A1 (de) | 2007-04-18 | 2013-11-27 | Invisage Technologies, INC. | Materialien, Systeme und Verfahren für optoelektronische Geräte |
| US8525287B2 (en) | 2007-04-18 | 2013-09-03 | Invisage Technologies, Inc. | Materials, systems and methods for optoelectronic devices |
| KR100877293B1 (ko) * | 2007-08-31 | 2009-01-07 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
| KR100920542B1 (ko) * | 2007-12-24 | 2009-10-08 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
| US8203195B2 (en) | 2008-04-18 | 2012-06-19 | Invisage Technologies, Inc. | Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom |
| FR2944140B1 (fr) | 2009-04-02 | 2011-09-16 | Commissariat Energie Atomique | Dispositif de detection d'image electronique |
| WO2011156507A1 (en) | 2010-06-08 | 2011-12-15 | Edward Hartley Sargent | Stable, sensitive photodetectors and image sensors including circuits, processes, and materials for enhanced imaging performance |
| CN113188655A (zh) * | 2021-04-09 | 2021-07-30 | 广州市艾佛光通科技有限公司 | 基于体声波的光传感器及其制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0517208A1 (de) * | 1991-06-05 | 1992-12-09 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Halbleitervorrichtung und deren Herstellungsprozess |
| JPH0883895A (ja) * | 1994-09-14 | 1996-03-26 | Toshiba Corp | 固体撮像素子 |
| US6448579B1 (en) * | 2000-12-06 | 2002-09-10 | L.G.Philips Lcd Co., Ltd. | Thin film transistor array substrate for liquid crystal display and a method for fabricating the same |
| US6396118B1 (en) * | 2000-02-03 | 2002-05-28 | Agilent Technologies, Inc. | Conductive mesh bias connection for an array of elevated active pixel sensors |
| US20040113220A1 (en) * | 2000-12-21 | 2004-06-17 | Peter Rieve | Optoelectronic component for conversion electromagnetic radiation into an intensity-dependent photocurrent |
| US6759262B2 (en) * | 2001-12-18 | 2004-07-06 | Agilent Technologies, Inc. | Image sensor with pixel isolation system and manufacturing method therefor |
| US6798033B2 (en) * | 2002-08-27 | 2004-09-28 | E-Phocus, Inc. | Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure |
-
2002
- 2002-11-29 FR FR0215023A patent/FR2848027B1/fr not_active Expired - Fee Related
-
2003
- 2003-11-14 DE DE60307408T patent/DE60307408T2/de not_active Expired - Lifetime
- 2003-11-14 AT AT03104193T patent/ATE336078T1/de not_active IP Right Cessation
- 2003-11-14 EP EP03104193A patent/EP1434270B1/de not_active Expired - Lifetime
- 2003-11-20 US US10/718,150 patent/US7049673B2/en not_active Expired - Fee Related
- 2003-11-26 JP JP2003396263A patent/JP4629328B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1434270A1 (de) | 2004-06-30 |
| US7049673B2 (en) | 2006-05-23 |
| ATE336078T1 (de) | 2006-09-15 |
| DE60307408T2 (de) | 2006-12-07 |
| FR2848027A1 (fr) | 2004-06-04 |
| US20040108517A1 (en) | 2004-06-10 |
| JP2004186686A (ja) | 2004-07-02 |
| FR2848027B1 (fr) | 2006-02-10 |
| JP4629328B2 (ja) | 2011-02-09 |
| EP1434270B1 (de) | 2006-08-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |