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DE60239391D1 - rgungsringes mit großem parasitärem Widerstand - Google Patents

rgungsringes mit großem parasitärem Widerstand

Info

Publication number
DE60239391D1
DE60239391D1 DE60239391T DE60239391T DE60239391D1 DE 60239391 D1 DE60239391 D1 DE 60239391D1 DE 60239391 T DE60239391 T DE 60239391T DE 60239391 T DE60239391 T DE 60239391T DE 60239391 D1 DE60239391 D1 DE 60239391D1
Authority
DE
Germany
Prior art keywords
ring
parasitic resistance
large parasitic
resistance
parasitic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60239391T
Other languages
English (en)
Inventor
Marco Montagnana
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60239391D1 publication Critical patent/DE60239391D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE60239391T 2002-06-07 2002-06-07 rgungsringes mit großem parasitärem Widerstand Expired - Lifetime DE60239391D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02425376A EP1369922B1 (de) 2002-06-07 2002-06-07 Mehrschichtige Metallstruktur eines Spannungsversorgungsringes mit großem parasitärem Widerstand

Publications (1)

Publication Number Publication Date
DE60239391D1 true DE60239391D1 (de) 2011-04-21

Family

ID=29433252

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60239391T Expired - Lifetime DE60239391D1 (de) 2002-06-07 2002-06-07 rgungsringes mit großem parasitärem Widerstand

Country Status (3)

Country Link
US (1) US7196363B2 (de)
EP (1) EP1369922B1 (de)
DE (1) DE60239391D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2870042B1 (fr) * 2004-05-07 2006-09-29 St Microelectronics Sa Structure capacitive de circuit integre
US7939856B2 (en) * 2004-12-31 2011-05-10 Stmicroelectronics Pvt. Ltd. Area-efficient distributed device structure for integrated voltage regulators
JP2007173760A (ja) * 2005-11-25 2007-07-05 Matsushita Electric Ind Co Ltd 半導体集積回路及びその設計方法
JP4997786B2 (ja) * 2006-02-17 2012-08-08 富士通セミコンダクター株式会社 半導体集積回路装置
US7750375B2 (en) 2006-09-30 2010-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Power line layout techniques for integrated circuits having modular cells
DE102006049740A1 (de) * 2006-10-21 2008-04-24 Atmel Germany Gmbh Halbleiterbauelement
US8549447B2 (en) 2010-04-24 2013-10-01 Robert Eisenstadt Integrated circuits with multiple I/O regions
TW201140786A (en) * 2010-05-14 2011-11-16 Realtek Semiconductor Corp Layout structure and version control circuit for integrated circuit
US9478505B2 (en) 2012-04-12 2016-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Guard ring design structure for semiconductor devices
JP6342165B2 (ja) * 2014-01-24 2018-06-13 ルネサスエレクトロニクス株式会社 半導体装置及びｉｏセル
US10540471B2 (en) 2016-05-11 2020-01-21 Samsung Electronics Co., Ltd. Layout design system and semiconductor device fabricated using the same

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344742A (ja) * 1986-08-12 1988-02-25 Fujitsu Ltd 半導体装置
JP2606845B2 (ja) * 1987-06-19 1997-05-07 富士通株式会社 半導体集積回路
JPH025550A (ja) * 1988-06-24 1990-01-10 Kawasaki Steel Corp 半導体装置
JPH04116850A (ja) 1990-09-06 1992-04-17 Seiko Epson Corp 半導体装置
JP3185271B2 (ja) * 1991-09-13 2001-07-09 日本電気株式会社 半導体集積回路
JP2919241B2 (ja) * 1993-09-13 1999-07-12 日本電気株式会社 電源配線
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
US5765279A (en) * 1995-05-22 1998-06-16 Fujitsu Limited Methods of manufacturing power supply distribution structures for multichip modules
JP3432963B2 (ja) * 1995-06-15 2003-08-04 沖電気工業株式会社 半導体集積回路
US5774326A (en) * 1995-08-25 1998-06-30 General Electric Company Multilayer capacitors using amorphous hydrogenated carbon
US5864177A (en) * 1996-12-12 1999-01-26 Honeywell Inc. Bypass capacitors for chip and wire circuit assembly
DE19736197C1 (de) * 1997-08-20 1999-03-04 Siemens Ag Integrierte Schaltung mit Kondensatoren
US6034864A (en) * 1997-11-14 2000-03-07 Murata Manufacturing Co., Ltd. Multilayer capacitor
US6285050B1 (en) * 1997-12-24 2001-09-04 International Business Machines Corporation Decoupling capacitor structure distributed above an integrated circuit and method for making same
US6066537A (en) * 1998-02-02 2000-05-23 Tritech Microelectronics, Ltd. Method for fabricating a shielded multilevel integrated circuit capacitor
US6252177B1 (en) * 1998-02-18 2001-06-26 Compaq Computer Corporation Low inductance capacitor mounting structure for capacitors of a printed circuit board
US6016000A (en) * 1998-04-22 2000-01-18 Cvc, Inc. Ultra high-speed chip semiconductor integrated circuit interconnect structure and fabrication method using free-space dielectrics
US6146939A (en) * 1998-09-18 2000-11-14 Tritech Microelectronics, Ltd. Metal-polycrystalline silicon-N-well multiple layered capacitor
JP3522144B2 (ja) * 1999-02-25 2004-04-26 富士通株式会社 容量回路および半導体集積回路装置
US6218729B1 (en) * 1999-03-11 2001-04-17 Atmel Corporation Apparatus and method for an integrated circuit having high Q reactive components
US6424022B1 (en) * 2000-03-12 2002-07-23 Mobilink Telecom, Inc. Guard mesh for noise isolation in highly integrated circuits
JP2000349238A (ja) * 1999-06-04 2000-12-15 Seiko Epson Corp 半導体装置
US6470545B1 (en) * 1999-09-15 2002-10-29 National Semiconductor Corporation Method of making an embedded green multi-layer ceramic chip capacitor in a low-temperature co-fired ceramic (LTCC) substrate
JP3489729B2 (ja) * 1999-11-19 2004-01-26 株式会社村田製作所 積層コンデンサ、配線基板、デカップリング回路および高周波回路
US6300161B1 (en) * 2000-02-15 2001-10-09 Alpine Microsystems, Inc. Module and method for interconnecting integrated circuits that facilitates high speed signal propagation with reduced noise
JP3666371B2 (ja) * 2000-08-08 2005-06-29 株式会社村田製作所 導電性ペーストおよび積層セラミック電子部品
US6385033B1 (en) * 2000-09-29 2002-05-07 Intel Corporation Fingered capacitor in an integrated circuit
JP4332634B2 (ja) * 2000-10-06 2009-09-16 Ｔｄｋ株式会社 積層型電子部品
JP2002260959A (ja) * 2001-03-01 2002-09-13 Nec Corp 積層コンデンサとその製造方法およびこのコンデンサを用いた半導体装置、電子回路基板
US6476497B1 (en) * 2001-03-26 2002-11-05 Lsi Logic Corporation Concentric metal density power routing
US6777755B2 (en) * 2001-12-05 2004-08-17 Agilent Technologies, Inc. Method and apparatus for creating a reliable long RC time constant
US6559544B1 (en) * 2002-03-28 2003-05-06 Alan Roth Programmable interconnect for semiconductor devices

Also Published As

Publication number Publication date
EP1369922B1 (de) 2011-03-09
US7196363B2 (en) 2007-03-27
US20040041268A1 (en) 2004-03-04
EP1369922A1 (de) 2003-12-10

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