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DE60222138D1 - Abstimmbarer laser - Google Patents

Abstimmbarer laser

Info

Publication number
DE60222138D1
DE60222138D1 DE60222138T DE60222138T DE60222138D1 DE 60222138 D1 DE60222138 D1 DE 60222138D1 DE 60222138 T DE60222138 T DE 60222138T DE 60222138 T DE60222138 T DE 60222138T DE 60222138 D1 DE60222138 D1 DE 60222138D1
Authority
DE
Germany
Prior art keywords
tunable laser
tunable
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60222138T
Other languages
English (en)
Other versions
DE60222138T2 (de
Inventor
Andrew Cannon Carter
Douglas Reid
David James Robbins
Andrew Ward
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumentum Technology UK Ltd
Original Assignee
Bookham Technology PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0118412A external-priority patent/GB2378315B/en
Priority claimed from GB0124921A external-priority patent/GB0124921D0/en
Application filed by Bookham Technology PLC filed Critical Bookham Technology PLC
Publication of DE60222138D1 publication Critical patent/DE60222138D1/de
Application granted granted Critical
Publication of DE60222138T2 publication Critical patent/DE60222138T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
DE60222138T 2001-07-30 2002-07-29 Abstimmbarer laser Expired - Lifetime DE60222138T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB0118412 2001-07-30
GB0118412A GB2378315B (en) 2001-07-30 2001-07-30 Tuneable laser
GB0124921A GB0124921D0 (en) 2001-10-17 2001-10-17 Tuneable laser
GB0124921 2001-10-17
PCT/GB2002/003463 WO2003012936A2 (en) 2001-07-30 2002-07-29 Tuneable laser

Publications (2)

Publication Number Publication Date
DE60222138D1 true DE60222138D1 (de) 2007-10-11
DE60222138T2 DE60222138T2 (de) 2008-05-21

Family

ID=26246371

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60222138T Expired - Lifetime DE60222138T2 (de) 2001-07-30 2002-07-29 Abstimmbarer laser

Country Status (8)

Country Link
US (1) US7145923B2 (de)
EP (1) EP1413023B1 (de)
JP (1) JP4458413B2 (de)
CN (1) CN1288810C (de)
AU (1) AU2002319490A1 (de)
CA (1) CA2455855A1 (de)
DE (1) DE60222138T2 (de)
WO (1) WO2003012936A2 (de)

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GB2385979B (en) 2002-02-28 2005-10-12 Bookham Technology Plc Control for a tunable laser
GB2430760A (en) 2005-09-29 2007-04-04 Bookham Technology Plc Chirped Bragg grating structure
GB2433160B (en) * 2005-12-08 2010-04-21 Bookham Technology Plc Bragg reflector grating
WO2007123334A1 (en) * 2006-04-20 2007-11-01 Electronics And Telecommunications Research Institute Wavelength tunable external cavity laser
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GB2448162A (en) * 2007-04-03 2008-10-08 Bookham Technology Plc Tunable semiconductor laser
US20090092159A1 (en) * 2007-05-28 2009-04-09 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device with tunable emission wavelength
JP2009059729A (ja) * 2007-08-29 2009-03-19 Sumitomo Electric Ind Ltd 半導体発光素子
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US9479280B2 (en) 2011-07-14 2016-10-25 Applied Optoelectronics, Inc. Extended cavity fabry-perot laser assembly capable of high speed optical modulation with narrow mode spacing and WDM optical system including same
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US9209601B2 (en) 2011-08-26 2015-12-08 Oclaro Technology Ltd Monolithically integrated tunable semiconductor laser
GB2493989A (en) * 2011-08-26 2013-02-27 Oclaro Technology Ltd Tunable multi-mode laser
GB2493988B (en) 2011-08-26 2016-01-13 Oclaro Technology Ltd Monolithically integrated tunable semiconductor laser
US9106050B2 (en) 2011-10-17 2015-08-11 Futurewei Technologies, Inc. Self-characterization tunable optical network unit
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GB2507527A (en) 2012-11-01 2014-05-07 Oclaro Technology Ltd Semiconductor DBR laser
US9236945B2 (en) 2012-12-07 2016-01-12 Applied Optoelectronics, Inc. Thermally shielded multi-channel transmitter optical subassembly and optical transceiver module including same
US9306671B2 (en) 2012-12-07 2016-04-05 Applied Optoelectronics, Inc. Thermally isolated multi-channel transmitter optical subassembly and optical transceiver module including same
US8831433B2 (en) 2012-12-07 2014-09-09 Applied Optoelectronics, Inc. Temperature controlled multi-channel transmitter optical subassembly and optical transceiver module including same
US9614620B2 (en) 2013-02-06 2017-04-04 Applied Optoelectronics, Inc. Coaxial transmitter optical subassembly (TOSA) with cuboid type to laser package and optical transceiver including same
US8995484B2 (en) 2013-02-22 2015-03-31 Applied Optoelectronics, Inc. Temperature controlled multi-channel transmitter optical subassembly and optical transceiver module including same
US9136972B2 (en) * 2013-12-27 2015-09-15 Infinera Corporation Controlling an optical transmitter that supports multiple modulation formats and baud rates
GB2522410A (en) 2014-01-20 2015-07-29 Rockley Photonics Ltd Tunable SOI laser
GB2522252B (en) 2014-01-20 2016-04-20 Rockley Photonics Ltd Tunable SOI laser
US9964720B2 (en) 2014-06-04 2018-05-08 Applied Optoelectronics, Inc. Monitoring and controlling temperature across a laser array in a transmitter optical subassembly (TOSA) package
EP3192136B1 (de) * 2014-09-08 2020-10-07 Lumentum Technology UK Limited Monolithisch integrierter abstimmbarer halbleiterlaser
US9762028B2 (en) * 2015-01-06 2017-09-12 Applied Optoelectronics, Inc. Two-section semiconductor laser with modulation-independent grating section to reduce chirp
CN107852244B (zh) 2015-05-22 2020-06-23 祥茂光电科技股份有限公司 具有长方体型to激光器封装的同轴光发射次模块(tosa)及包括其的光收发器
US9627851B1 (en) * 2015-10-28 2017-04-18 Rockley Photonics Limited Discrete wavelength tunable laser
US9997890B2 (en) 2015-10-28 2018-06-12 Rockley Photonics Limited Discrete wavelength tunable laser
FR3043852B1 (fr) * 2015-11-13 2017-12-22 Commissariat Energie Atomique Dispositif laser et procede de fabrication d’un tel dispositif laser
GB2547467A (en) 2016-02-19 2017-08-23 Rockley Photonics Ltd Tunable laser
US11699892B2 (en) 2016-02-19 2023-07-11 Rockley Photonics Limited Discrete wavelength tunable laser
WO2017152401A1 (zh) * 2016-03-09 2017-09-14 华为技术有限公司 一种光放大器
US9876576B2 (en) 2016-03-17 2018-01-23 Applied Optoelectronics, Inc. Layered coaxial transmitter optical subassemblies with support bridge therebetween
CN105891937B (zh) * 2016-05-25 2018-12-07 哈尔滨工程大学 一种复合周期波导结构的宽带太赫兹反射器
KR102444028B1 (ko) * 2017-03-29 2022-09-15 아이피지 포토닉스 코포레이션 처프 펄스 증폭 레이저 시스템
EP3602703A1 (de) * 2017-04-07 2020-02-05 Huawei Technologies Co., Ltd. Laser
US10811848B2 (en) 2017-06-14 2020-10-20 Rockley Photonics Limited Broadband arbitrary wavelength multichannel laser source
CN107425405B (zh) * 2017-06-29 2019-11-08 武汉电信器件有限公司 一种可调谐半导体激光器
US11125935B2 (en) * 2019-03-11 2021-09-21 Honeywell International Inc. Optical structure for imparting a distributed phase shift to an optical signal, electro-optic modulator incorporating such structure for reduced size, low signal loss, and high extinction ratio, and related system and method
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Also Published As

Publication number Publication date
WO2003012936A2 (en) 2003-02-13
EP1413023A2 (de) 2004-04-28
JP2004537863A (ja) 2004-12-16
CN1561566A (zh) 2005-01-05
US20040218638A1 (en) 2004-11-04
CN1288810C (zh) 2006-12-06
AU2002319490A1 (en) 2003-02-17
US7145923B2 (en) 2006-12-05
JP4458413B2 (ja) 2010-04-28
WO2003012936A3 (en) 2004-01-08
EP1413023B1 (de) 2007-08-29
CA2455855A1 (en) 2003-02-13
DE60222138T2 (de) 2008-05-21

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Legal Events

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8364 No opposition during term of opposition