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DE60218437D1 - Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidung - Google Patents

Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidung

Info

Publication number
DE60218437D1
DE60218437D1 DE60218437T DE60218437T DE60218437D1 DE 60218437 D1 DE60218437 D1 DE 60218437D1 DE 60218437 T DE60218437 T DE 60218437T DE 60218437 T DE60218437 T DE 60218437T DE 60218437 D1 DE60218437 D1 DE 60218437D1
Authority
DE
Germany
Prior art keywords
metal separation
electrically
current
solution
treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60218437T
Other languages
English (en)
Inventor
Hiroshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60218437D1 publication Critical patent/DE60218437D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture And Refinement Of Metals (AREA)
DE60218437T 2001-02-07 2002-01-29 Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidung Expired - Lifetime DE60218437D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001030824 2001-02-07
PCT/JP2002/000623 WO2002063067A1 (fr) 2001-02-07 2002-01-29 Procede et appareil de depot autocatalytique

Publications (1)

Publication Number Publication Date
DE60218437D1 true DE60218437D1 (de) 2007-04-12

Family

ID=18894991

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60218437T Expired - Lifetime DE60218437D1 (de) 2001-02-07 2002-01-29 Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidung

Country Status (8)

Country Link
US (1) US20040062861A1 (de)
EP (1) EP1371755B1 (de)
JP (1) JP4083016B2 (de)
KR (1) KR100507019B1 (de)
CN (1) CN1223705C (de)
AT (1) ATE355399T1 (de)
DE (1) DE60218437D1 (de)
WO (1) WO2002063067A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4554881B2 (ja) * 2002-11-08 2010-09-29 旭化成株式会社 有機半導体素子の製造方法
FI20030816L (fi) * 2003-05-30 2004-12-01 Metso Corp Menetelmä metallijohtimien valmistamiseksi substraatille
JP5008280B2 (ja) * 2004-11-10 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP4926433B2 (ja) * 2004-12-06 2012-05-09 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP5154007B2 (ja) 2004-12-06 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4794232B2 (ja) * 2004-12-06 2011-10-19 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4761907B2 (ja) * 2005-09-28 2011-08-31 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4708243B2 (ja) * 2006-03-28 2011-06-22 東京エレクトロン株式会社 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体
US20120058362A1 (en) * 2010-09-08 2012-03-08 Infineon Technologies Ag Method for depositing metal on a substrate; metal structure and method for plating a metal on a substrate
TWI485286B (zh) 2011-11-16 2015-05-21 Ebara Corp Electroless plating and electroless plating

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936541B1 (de) * 1969-08-15 1974-10-01
US4027686A (en) * 1973-01-02 1977-06-07 Texas Instruments Incorporated Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water
US5234499A (en) * 1990-06-26 1993-08-10 Dainippon Screen Mgf. Co., Ltd. Spin coating apparatus
CN1059967C (zh) * 1993-03-25 2000-12-27 东京电子株式会社 形成涂膜的方法和装置
WO1996032521A1 (fr) * 1995-04-10 1996-10-17 Kao Corporation Procede de metallisation au bain chaud, et procede et equipement de production de matrices
JPH08319578A (ja) * 1995-05-24 1996-12-03 Tdk Corp 湿式法による多層膜の製造方法およびその製造装置
JP3022392B2 (ja) * 1997-04-04 2000-03-21 スガ試験機株式会社 イオン交換膜への白金めっき方法
AU8919398A (en) * 1997-08-25 1999-03-16 Velcro Industries B.V. Forming mold cavities
JPH11140657A (ja) * 1997-11-12 1999-05-25 Ricoh Co Ltd 無電解めっき方法
JP3065039B2 (ja) * 1998-10-29 2000-07-12 アプライド マテリアルズ インコーポレイテッド 成膜方法及び装置
US6984302B2 (en) * 1998-12-30 2006-01-10 Intel Corporation Electroplating cell based upon rotational plating solution flow
US6258223B1 (en) * 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6153935A (en) * 1999-09-30 2000-11-28 International Business Machines Corporation Dual etch stop/diffusion barrier for damascene interconnects
US6376013B1 (en) * 1999-10-06 2002-04-23 Advanced Micro Devices, Inc. Multiple nozzles for dispensing resist
US6403500B1 (en) * 2001-01-12 2002-06-11 Advanced Micro Devices, Inc. Cross-shaped resist dispensing system and method

Also Published As

Publication number Publication date
JP4083016B2 (ja) 2008-04-30
JPWO2002063067A1 (ja) 2004-06-10
ATE355399T1 (de) 2006-03-15
KR20030079985A (ko) 2003-10-10
CN1223705C (zh) 2005-10-19
EP1371755A1 (de) 2003-12-17
CN1491297A (zh) 2004-04-21
EP1371755B1 (de) 2007-02-28
WO2002063067A1 (fr) 2002-08-15
EP1371755A4 (de) 2005-07-27
US20040062861A1 (en) 2004-04-01
KR100507019B1 (ko) 2005-08-09

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Legal Events

Date Code Title Description
8332 No legal effect for de