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DE60122878D1 - Sicherungseinsatz - Google Patents

Sicherungseinsatz

Info

Publication number
DE60122878D1
DE60122878D1 DE60122878T DE60122878T DE60122878D1 DE 60122878 D1 DE60122878 D1 DE 60122878D1 DE 60122878 T DE60122878 T DE 60122878T DE 60122878 T DE60122878 T DE 60122878T DE 60122878 D1 DE60122878 D1 DE 60122878D1
Authority
DE
Germany
Prior art keywords
fuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60122878T
Other languages
English (en)
Other versions
DE60122878T2 (de
Inventor
Chandrasekharan Kothandaraman
Frank Grellner
Umar Iyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
International Business Machines Corp
Original Assignee
International Business Machines Corp
Infineon Technologies North America Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp, Infineon Technologies North America Corp filed Critical International Business Machines Corp
Publication of DE60122878D1 publication Critical patent/DE60122878D1/de
Application granted granted Critical
Publication of DE60122878T2 publication Critical patent/DE60122878T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE60122878T 2000-05-30 2001-05-18 Sicherungseinsatz Expired - Lifetime DE60122878T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/580,132 US6368902B1 (en) 2000-05-30 2000-05-30 Enhanced efuses by the local degradation of the fuse link
US580132 2000-05-30
PCT/US2001/015998 WO2001093331A2 (en) 2000-05-30 2001-05-18 Fuse link

Publications (2)

Publication Number Publication Date
DE60122878D1 true DE60122878D1 (de) 2006-10-19
DE60122878T2 DE60122878T2 (de) 2007-04-05

Family

ID=24319847

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60122878T Expired - Lifetime DE60122878T2 (de) 2000-05-30 2001-05-18 Sicherungseinsatz
DE10125407A Expired - Fee Related DE10125407B4 (de) 2000-05-30 2001-05-25 Verbesserte elektronische Sicherungen durch die lokale Verschlechterung der schmelzbaren Verbindung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE10125407A Expired - Fee Related DE10125407B4 (de) 2000-05-30 2001-05-25 Verbesserte elektronische Sicherungen durch die lokale Verschlechterung der schmelzbaren Verbindung

Country Status (6)

Country Link
US (1) US6368902B1 (de)
EP (1) EP1285463B1 (de)
JP (1) JP3703086B2 (de)
DE (2) DE60122878T2 (de)
TW (1) TW518735B (de)
WO (1) WO2001093331A2 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
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US20050269666A1 (en) * 2004-06-07 2005-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuses as programmable data storage
US6642601B2 (en) * 2000-12-18 2003-11-04 Texas Instruments Incorporated Low current substantially silicide fuse for integrated circuits
US6432760B1 (en) * 2000-12-28 2002-08-13 Infineon Technologies Ag Method and structure to reduce the damage associated with programming electrical fuses
US20030025177A1 (en) * 2001-08-03 2003-02-06 Chandrasekharan Kothandaraman Optically and electrically programmable silicided polysilicon fuse device
US6436738B1 (en) * 2001-08-22 2002-08-20 Taiwan Semiconductor Manufacturing Company Silicide agglomeration poly fuse device
US20030109125A1 (en) * 2001-12-10 2003-06-12 Chewnpu Jou Fuse structure for a semiconductor device and manufacturing method thereof
US6998865B2 (en) * 2001-12-10 2006-02-14 International Business Machines Corporation Semiconductor device test arrangement with reassignable probe pads
US6661330B1 (en) 2002-07-23 2003-12-09 Texas Instruments Incorporated Electrical fuse for semiconductor integrated circuits
AU2003286333A1 (en) * 2002-12-16 2004-07-09 Koninklijke Philips Electronics N.V. Poly-silicon stringer fuse
USRE50035E1 (en) 2003-03-31 2024-07-09 Sony Group Corporation Semiconductor device
JP2004304002A (ja) * 2003-03-31 2004-10-28 Sony Corp 半導体装置
US7872897B2 (en) * 2003-04-11 2011-01-18 International Business Machines Corporation Programmable semiconductor device
US6933591B1 (en) 2003-10-16 2005-08-23 Altera Corporation Electrically-programmable integrated circuit fuses and sensing circuits
US20050127475A1 (en) * 2003-12-03 2005-06-16 International Business Machines Corporation Apparatus and method for electronic fuse with improved esd tolerance
US7106164B2 (en) * 2003-12-03 2006-09-12 International Business Machines Corporation Apparatus and method for electronic fuse with improved ESD tolerance
US6946718B2 (en) * 2004-01-05 2005-09-20 Hewlett-Packard Development Company, L.P. Integrated fuse for multilayered structure
DE102004014925B4 (de) * 2004-03-26 2016-12-29 Infineon Technologies Ag Elektronische Schaltkreisanordnung
US20050285222A1 (en) 2004-06-29 2005-12-29 Kong-Beng Thei New fuse structure
US7444557B2 (en) * 2004-07-15 2008-10-28 Freescale Semiconductor, Inc. Memory with fault tolerant reference circuitry
US7242072B2 (en) * 2004-11-23 2007-07-10 International Business Machines Corporation Electrically programmable fuse for silicon-on-insulator (SOI) technology
US7382036B2 (en) 2005-07-29 2008-06-03 International Business Machines Corporation Doped single crystal silicon silicided eFuse
US7224633B1 (en) 2005-12-08 2007-05-29 International Business Machines Corporation eFuse sense circuit
JP4825559B2 (ja) * 2006-03-27 2011-11-30 富士通セミコンダクター株式会社 半導体装置
US7672185B2 (en) * 2007-01-03 2010-03-02 International Business Machines Corporation Method and apparatus to monitor circuit variation effects on electrically programmable fuses
US8004059B2 (en) 2007-01-12 2011-08-23 International Business Machines Corporation eFuse containing SiGe stack
US7888771B1 (en) 2007-05-02 2011-02-15 Xilinx, Inc. E-fuse with scalable filament link
US7759766B2 (en) * 2007-08-22 2010-07-20 International Business Machines Corporation Electrical fuse having a thin fuselink
US20090079439A1 (en) * 2007-09-20 2009-03-26 United Microelectronics Corp. Efuse system and testing method thereof
US7745855B2 (en) * 2007-10-04 2010-06-29 International Business Machines Corporation Single crystal fuse on air in bulk silicon
US7924597B2 (en) * 2007-10-31 2011-04-12 Hewlett-Packard Development Company, L.P. Data storage in circuit elements with changed resistance
CN101170099B (zh) * 2007-11-30 2012-03-28 上海宏力半导体制造有限公司 多晶硅硅化物电熔丝器件
US7923811B1 (en) 2008-03-06 2011-04-12 Xilinx, Inc. Electronic fuse cell with enhanced thermal gradient
US8564023B2 (en) * 2008-03-06 2013-10-22 Xilinx, Inc. Integrated circuit with MOSFET fuse element
US8003474B2 (en) * 2008-08-15 2011-08-23 International Business Machines Corporation Electrically programmable fuse and fabrication method
US20100117190A1 (en) * 2008-11-13 2010-05-13 Harry Chuang Fuse structure for intergrated circuit devices
DE102009046486A1 (de) * 2009-11-06 2011-05-12 Robert Bosch Gmbh Schutzeinrichtung für eine Leiterplatte
US8530319B2 (en) 2010-10-14 2013-09-10 International Business Machines Corporation Vertical silicide e-fuse
US8299567B2 (en) 2010-11-23 2012-10-30 International Business Machines Corporation Structure of metal e-fuse
US8377790B2 (en) 2011-01-27 2013-02-19 International Business Machines Corporation Method of fabricating an embedded polysilicon resistor and an embedded eFuse isolated from a substrate
US8659118B2 (en) * 2011-07-29 2014-02-25 Infineon Technologies Ag Semiconductor device comprising a fuse structure and a method for manufacturing such semiconductor device
JP5712875B2 (ja) * 2011-09-07 2015-05-07 富士通セミコンダクター株式会社 半導体装置及びその製造方法
CN103594450B (zh) * 2012-08-13 2016-04-27 中芯国际集成电路制造(上海)有限公司 一种半导体器件的电可编程熔丝结构
US9059170B2 (en) 2013-02-06 2015-06-16 International Business Machines Corporation Electronic fuse having a damaged region
US9536829B2 (en) 2014-09-11 2017-01-03 Internatonal Business Machines Corporation Programmable electrical fuse in keep out zone

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042950A (en) 1976-03-01 1977-08-16 Advanced Micro Devices, Inc. Platinum silicide fuse links for integrated circuit devices
US4198744A (en) * 1978-08-16 1980-04-22 Harris Corporation Process for fabrication of fuse and interconnects
US4184933A (en) 1978-11-29 1980-01-22 Harris Corporation Method of fabricating two level interconnects and fuse on an IC
JPS5847596Y2 (ja) * 1979-09-05 1983-10-29 富士通株式会社 半導体装置
JPS59154038A (ja) * 1983-02-23 1984-09-03 Hitachi Ltd 半導体装置
US4598462A (en) 1983-04-07 1986-07-08 Rca Corporation Method for making semiconductor device with integral fuse
JPH02215149A (ja) * 1989-02-16 1990-08-28 Sanyo Electric Co Ltd 半導体装置とその製造方法
US5311039A (en) * 1990-04-24 1994-05-10 Seiko Epson Corporation PROM and ROM memory cells
US5963825A (en) * 1992-08-26 1999-10-05 Hyundai Electronics America Method of fabrication of semiconductor fuse with polysilicon plate
US5389814A (en) * 1993-02-26 1995-02-14 International Business Machines Corporation Electrically blowable fuse structure for organic insulators
US5466484A (en) * 1993-09-29 1995-11-14 Motorola, Inc. Resistor structure and method of setting a resistance value
DE19521985B4 (de) * 1994-06-17 2007-08-09 Denso Corp., Kariya Halbleitervorrichtung und diesbezügliches Herstellungsverfahren
DE69514588T2 (de) 1994-07-29 2000-06-21 Stmicroelectronics, Inc. Verfahren zum Testen und Reparieren eines integrierten Schaltkreises und zum Herstellen einer Passivierungsstruktur
US5444287A (en) 1994-08-10 1995-08-22 International Business Machines Corporation Thermally activated noise immune fuse
US5578517A (en) * 1994-10-24 1996-11-26 Taiwan Semiconductor Manufacturing Company Ltd. Method of forming a highly transparent silicon rich nitride protective layer for a fuse window
EP0762498A3 (de) 1995-08-28 1998-06-24 International Business Machines Corporation Fenster für Sicherung mit kontrollierter Sicherungsoxiddicke
US5789970A (en) 1995-09-29 1998-08-04 Intel Corporation Static, low current, low voltage sensing circuit for sensing the state of a fuse device
US5708291A (en) 1995-09-29 1998-01-13 Intel Corporation Silicide agglomeration fuse device
US5712206A (en) * 1996-03-20 1998-01-27 Vanguard International Semiconductor Corporation Method of forming moisture barrier layers for integrated circuit applications
US5976943A (en) 1996-12-27 1999-11-02 Vlsi Technology, Inc. Method for bi-layer programmable resistor
US5899736A (en) 1997-09-19 1999-05-04 Siemens Aktiengesellschaft Techniques for forming electrically blowable fuses on an integrated circuit

Also Published As

Publication number Publication date
US6368902B1 (en) 2002-04-09
DE60122878T2 (de) 2007-04-05
TW518735B (en) 2003-01-21
WO2001093331A2 (en) 2001-12-06
JP2002057217A (ja) 2002-02-22
EP1285463A2 (de) 2003-02-26
DE10125407A1 (de) 2001-12-20
JP3703086B2 (ja) 2005-10-05
WO2001093331A3 (en) 2002-07-18
EP1285463B1 (de) 2006-09-06
DE10125407B4 (de) 2006-02-23

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: INFINEON TECHNOLOGIES AG, 81669 MUENCHEN, DE

Owner name: INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y

8364 No opposition during term of opposition