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DE60038663D1 - Thyristoren und verfahren zur herstellung - Google Patents

Thyristoren und verfahren zur herstellung

Info

Publication number
DE60038663D1
DE60038663D1 DE60038663T DE60038663T DE60038663D1 DE 60038663 D1 DE60038663 D1 DE 60038663D1 DE 60038663 T DE60038663 T DE 60038663T DE 60038663 T DE60038663 T DE 60038663T DE 60038663 D1 DE60038663 D1 DE 60038663D1
Authority
DE
Germany
Prior art keywords
thyristors
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60038663T
Other languages
English (en)
Other versions
DE60038663T2 (de
Inventor
Peter W Green
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Publication of DE60038663D1 publication Critical patent/DE60038663D1/de
Application granted granted Critical
Publication of DE60038663T2 publication Critical patent/DE60038663T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
DE60038663T 1999-08-21 2000-08-02 Thyristoren und verfahren zur herstellung Expired - Lifetime DE60038663T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9919764.2A GB9919764D0 (en) 1999-08-21 1999-08-21 Thyristors and their manufacture
GB9919764 1999-08-21
PCT/EP2000/007512 WO2001018875A1 (en) 1999-08-21 2000-08-02 Thyristors and their manufacture

Publications (2)

Publication Number Publication Date
DE60038663D1 true DE60038663D1 (de) 2008-06-05
DE60038663T2 DE60038663T2 (de) 2009-06-10

Family

ID=10859525

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60038663T Expired - Lifetime DE60038663T2 (de) 1999-08-21 2000-08-02 Thyristoren und verfahren zur herstellung

Country Status (6)

Country Link
US (1) US6507050B1 (de)
EP (1) EP1129490B1 (de)
JP (1) JP2003509848A (de)
DE (1) DE60038663T2 (de)
GB (1) GB9919764D0 (de)
WO (1) WO2001018875A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936908B2 (en) 2001-05-03 2005-08-30 Ixys Corporation Forward and reverse blocking devices
EP1341238B1 (de) * 2002-02-20 2012-09-05 Shindengen Electric Manufacturing Co., Ltd. Diodeanordnung und Transistoranordnung
US7071537B2 (en) * 2002-05-17 2006-07-04 Ixys Corporation Power device having electrodes on a top surface thereof
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US8120023B2 (en) * 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
WO2005117134A1 (ja) * 2004-05-26 2005-12-08 Shindengen Electric Manufacturing Co., Ltd. ダイオード及びサイリスタ
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
DE102007041124B4 (de) * 2007-08-30 2009-06-04 Infineon Technologies Ag Thyristor mit verbessertem Einschaltverhalten, Thyristoranordnung mit einem Thyristor, Verfahren zur Herstellung eines Thyristors und einer Thyristoranordnung
JP2012503314A (ja) 2008-09-15 2012-02-02 オーエスアイ．オプトエレクトロニクス．インコーポレイテッド 浅いｎ＋層を有する薄い能動層フィッシュボーン・フォトダイオードとその製造方法
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
JP2014123633A (ja) * 2012-12-20 2014-07-03 Renesas Electronics Corp 半導体装置
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
EP2913847B1 (de) 2014-02-28 2018-04-18 LFoundry S.r.l. Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement
US9590033B1 (en) * 2015-11-20 2017-03-07 Ixys Corporation Trench separation diffusion for high voltage device
CN105552122A (zh) * 2016-03-14 2016-05-04 江苏捷捷微电子股份有限公司 一种带有深阱终端环结构的平面可控硅芯片及其制造方法
US10193000B1 (en) 2017-07-31 2019-01-29 Ixys, Llc Fast recovery inverse diode
US10319669B2 (en) 2017-08-31 2019-06-11 Ixys, Llc Packaged fast inverse diode component for PFC applications
US10424677B2 (en) 2017-08-31 2019-09-24 Littelfuse, Inc. Charge carrier extraction inverse diode

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1536545A (en) * 1975-03-26 1978-12-20 Mullard Ltd Semiconductor device manufacture
US4797720A (en) * 1981-07-29 1989-01-10 American Telephone And Telegraph Company, At&T Bell Laboratories Controlled breakover bidirectional semiconductor switch
JP2510972B2 (ja) * 1984-12-28 1996-06-26 株式会社東芝 双方向サイリスタ
DE3832709A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Thyristor
JPH03124064A (ja) * 1989-10-06 1991-05-27 Nec Corp 逆導通ショックレーダイオード
DE4119904A1 (de) * 1991-06-17 1992-12-24 Telefunken Electronic Gmbh Halbleiteranordnung

Also Published As

Publication number Publication date
GB9919764D0 (en) 1999-10-27
US6507050B1 (en) 2003-01-14
WO2001018875A1 (en) 2001-03-15
JP2003509848A (ja) 2003-03-11
DE60038663T2 (de) 2009-06-10
EP1129490A1 (de) 2001-09-05
EP1129490B1 (de) 2008-04-23

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8364 No opposition during term of opposition