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DE60030765D1 - MOBILE COMMUNICATION DEVICE WITH INTEGRATED EMBEDDED FLASH AND SRAM STORAGE - Google Patents

MOBILE COMMUNICATION DEVICE WITH INTEGRATED EMBEDDED FLASH AND SRAM STORAGE

Info

Publication number
DE60030765D1
DE60030765D1 DE60030765T DE60030765T DE60030765D1 DE 60030765 D1 DE60030765 D1 DE 60030765D1 DE 60030765 T DE60030765 T DE 60030765T DE 60030765 T DE60030765 T DE 60030765T DE 60030765 D1 DE60030765 D1 DE 60030765D1
Authority
DE
Germany
Prior art keywords
flash
flash memory
macros
memory controller
asic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60030765T
Other languages
German (de)
Other versions
DE60030765T2 (en
Inventor
Sanjay Jha
Stephen Simmonds
Jalal Elhusseini
K Yu
Safi Khan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of DE60030765D1 publication Critical patent/DE60030765D1/en
Application granted granted Critical
Publication of DE60030765T2 publication Critical patent/DE60030765T2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
  • Storage Device Security (AREA)
  • Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Non-Volatile Memory (AREA)

Abstract

The flash and SRAM memory (112, 113) are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce over all power consumption of a mobile telephone employing the ASIC. The flash memory system (112) includes a flash memory array (130) configured to provide a set of individual flash macros and a flash memory controller (132) for accessing the flash macros. The flash memory controller includes a read while writing unit (144, 146) for writing to one of the flash macros while simultaneously reading from another of the flash macros. The flash memory controller also includes programmable wait state registers (138) and a password register (140) providing a separate password for different portions of the flash memory array. A memory swap unit (149) is provided for swapping high and low memory subsequent to completion of operations performed by the boot loader. Method and apparatus implementations are disclosed.
DE60030765T 1999-12-17 2000-12-14 MOBILE COMMUNICATION DEVICE WITH INTEGRATED EMBEDDED FLASH AND SRAM STORAGE Expired - Lifetime DE60030765T2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/465,665 US6407949B1 (en) 1999-12-17 1999-12-17 Mobile communication device having integrated embedded flash and SRAM memory
US465665 1999-12-17
PCT/US2000/034216 WO2001045106A2 (en) 1999-12-17 2000-12-14 Mobile communication device having integrated embedded flash and sram memory

Publications (2)

Publication Number Publication Date
DE60030765D1 true DE60030765D1 (en) 2006-10-26
DE60030765T2 DE60030765T2 (en) 2007-09-13

Family

ID=23848684

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60030765T Expired - Lifetime DE60030765T2 (en) 1999-12-17 2000-12-14 MOBILE COMMUNICATION DEVICE WITH INTEGRATED EMBEDDED FLASH AND SRAM STORAGE

Country Status (12)

Country Link
US (2) US6407949B1 (en)
EP (4) EP1710806B1 (en)
JP (5) JP4795598B2 (en)
KR (1) KR20030011067A (en)
CN (1) CN1411601A (en)
AT (1) ATE339764T1 (en)
AU (1) AU2271301A (en)
CA (4) CA2393143A1 (en)
DE (1) DE60030765T2 (en)
ES (1) ES2269213T3 (en)
HK (1) HK1052248A1 (en)
WO (1) WO2001045106A2 (en)

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Also Published As

Publication number Publication date
EP1238393B1 (en) 2006-09-13
JP2003517168A (en) 2003-05-20
ES2269213T3 (en) 2007-04-01
JP4795598B2 (en) 2011-10-19
US20010036109A1 (en) 2001-11-01
US6407949B1 (en) 2002-06-18
EP1713080A1 (en) 2006-10-18
EP1238393A2 (en) 2002-09-11
KR20030011067A (en) 2003-02-06
CN1411601A (en) 2003-04-16
CA2704892A1 (en) 2001-06-21
JP5123410B2 (en) 2013-01-23
JP5801436B2 (en) 2015-10-28
CA2704894A1 (en) 2001-06-21
JP2012141993A (en) 2012-07-26
US6392925B2 (en) 2002-05-21
EP1710806A1 (en) 2006-10-11
WO2001045106A3 (en) 2002-01-10
JP2011192290A (en) 2011-09-29
JP2012141994A (en) 2012-07-26
DE60030765T2 (en) 2007-09-13
JP2014160485A (en) 2014-09-04
CA2393143A1 (en) 2001-06-21
EP1713079B1 (en) 2018-03-21
AU2271301A (en) 2001-06-25
WO2001045106A2 (en) 2001-06-21
EP1713079A1 (en) 2006-10-18
ATE339764T1 (en) 2006-10-15
CA2704893A1 (en) 2001-06-21
EP1710806B1 (en) 2016-02-03
HK1052248A1 (en) 2003-09-05
JP5453471B2 (en) 2014-03-26

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Legal Events

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8364 No opposition during term of opposition