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DE60030517T8 - Verfahren zur wärmebehandlung durch laserstrahlen, und halbleiteranordnung - Google Patents

Verfahren zur wärmebehandlung durch laserstrahlen, und halbleiteranordnung Download PDF

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Publication number
DE60030517T8
DE60030517T8 DE60030517T DE60030517T DE60030517T8 DE 60030517 T8 DE60030517 T8 DE 60030517T8 DE 60030517 T DE60030517 T DE 60030517T DE 60030517 T DE60030517 T DE 60030517T DE 60030517 T8 DE60030517 T8 DE 60030517T8
Authority
DE
Germany
Prior art keywords
heat treatment
laser radiation
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE60030517T
Other languages
English (en)
Other versions
DE60030517T2 (de
DE60030517D1 (de
Inventor
Tetsuya Ogawa
Hidetada Tokioka
Yukio Sato
Mitsuo Inoue
Tomohiro Sasagawa
Mitsutoshi Suwa-shi MIYASAKA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Mitsubishi Electric Corp
Original Assignee
Seiko Epson Corp
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11063107A external-priority patent/JP2000260731A/ja
Priority claimed from JP09043999A external-priority patent/JP3908405B2/ja
Application filed by Seiko Epson Corp, Mitsubishi Electric Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE60030517D1 publication Critical patent/DE60030517D1/de
Publication of DE60030517T2 publication Critical patent/DE60030517T2/de
Publication of DE60030517T8 publication Critical patent/DE60030517T8/de
Active legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
DE60030517T 1999-03-10 2000-03-08 Verfahren zur wärmebehandlung durch laserstrahlen, und halbleiteranordnung Active DE60030517T8 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP11063107A JP2000260731A (ja) 1999-03-10 1999-03-10 レーザ熱処理方法、レーザ熱処理装置および半導体デバイス
JP6310799 1999-03-10
JP09043999A JP3908405B2 (ja) 1999-03-31 1999-03-31 レーザ熱処理方法
JP9043999 1999-03-31
PCT/JP2000/001375 WO2000054314A1 (en) 1999-03-10 2000-03-08 Method and apparatus for laser heat treatment, and semiconductor device

Publications (3)

Publication Number Publication Date
DE60030517D1 DE60030517D1 (de) 2006-10-19
DE60030517T2 DE60030517T2 (de) 2007-01-11
DE60030517T8 true DE60030517T8 (de) 2007-09-06

Family

ID=26404190

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60030517T Active DE60030517T8 (de) 1999-03-10 2000-03-08 Verfahren zur wärmebehandlung durch laserstrahlen, und halbleiteranordnung

Country Status (7)

Country Link
US (2) US6566683B1 (de)
EP (2) EP1748471B1 (de)
KR (1) KR100407748B1 (de)
CN (1) CN1179401C (de)
DE (1) DE60030517T8 (de)
TW (1) TW445545B (de)
WO (1) WO2000054314A1 (de)

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Also Published As

Publication number Publication date
CN1304548A (zh) 2001-07-18
EP1087429A1 (de) 2001-03-28
TW445545B (en) 2001-07-11
US6753548B2 (en) 2004-06-22
WO2000054314A1 (en) 2000-09-14
US6566683B1 (en) 2003-05-20
EP1087429B1 (de) 2006-09-06
EP1748471A1 (de) 2007-01-31
KR20010043343A (ko) 2001-05-25
EP1748471B1 (de) 2013-01-02
DE60030517T2 (de) 2007-01-11
EP1087429A4 (de) 2001-07-04
US20030201466A1 (en) 2003-10-30
CN1179401C (zh) 2004-12-08
KR100407748B1 (ko) 2003-12-01
DE60030517D1 (de) 2006-10-19

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Inventor name: SATO, YUKIO, TOKYO 100-8310, JP

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