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DE60030374D1 - Mehrkanaliges Ausrichtsystem unter Verwendung eines Interferenzgitters - Google Patents

Mehrkanaliges Ausrichtsystem unter Verwendung eines Interferenzgitters

Info

Publication number
DE60030374D1
DE60030374D1 DE60030374T DE60030374T DE60030374D1 DE 60030374 D1 DE60030374 D1 DE 60030374D1 DE 60030374 T DE60030374 T DE 60030374T DE 60030374 T DE60030374 T DE 60030374T DE 60030374 D1 DE60030374 D1 DE 60030374D1
Authority
DE
Germany
Prior art keywords
alignment system
channel alignment
interference grid
grid
interference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60030374T
Other languages
English (en)
Other versions
DE60030374T2 (de
Inventor
Stuart T Stanton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Application granted granted Critical
Publication of DE60030374D1 publication Critical patent/DE60030374D1/de
Publication of DE60030374T2 publication Critical patent/DE60030374T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7092—Signal processing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
DE60030374T 1999-08-10 2000-07-21 Mehrkanaliges Ausrichtsystem unter Verwendung eines Interferenzgitters Expired - Lifetime DE60030374T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US371337 1995-01-11
US09/371,337 US6469793B1 (en) 1999-08-10 1999-08-10 Multi-channel grating interference alignment sensor

Publications (2)

Publication Number Publication Date
DE60030374D1 true DE60030374D1 (de) 2006-10-12
DE60030374T2 DE60030374T2 (de) 2006-12-21

Family

ID=23463556

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60030374T Expired - Lifetime DE60030374T2 (de) 1999-08-10 2000-07-21 Mehrkanaliges Ausrichtsystem unter Verwendung eines Interferenzgitters

Country Status (6)

Country Link
US (1) US6469793B1 (de)
EP (1) EP1076264B1 (de)
JP (1) JP2001093833A (de)
KR (1) KR100577107B1 (de)
CA (1) CA2314512A1 (de)
DE (1) DE60030374T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7242464B2 (en) * 1999-06-24 2007-07-10 Asml Holdings N.V. Method for characterizing optical systems using holographic reticles
US20050010310A1 (en) * 2003-07-11 2005-01-13 Touzov Igor Victorovich Method of alignment for precision tools.
US6992778B2 (en) * 2003-08-08 2006-01-31 Mitutoyo Corporation Method and apparatus for self-calibration of a tunable-source phase shifting interferometer
US20080036984A1 (en) * 2006-08-08 2008-02-14 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
WO2009028494A1 (ja) * 2007-08-28 2009-03-05 Nikon Corporation 位置検出装置、位置検出方法、露光装置、およびデバイス製造方法
DE102008029970A1 (de) * 2008-06-26 2009-12-31 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie sowie Verfahren zum Überwachen einer lateralen Abbildungsstabilität
NL2007215A (en) * 2010-09-08 2012-03-12 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and method of applying a pattern to a substrate.
US8885172B2 (en) 2011-02-01 2014-11-11 Zygo Corporation Interferometric heterodyne optical encoder system
EP2699968B1 (de) * 2011-04-22 2024-02-21 ASML Netherlands B.V. Lithographisches system für die bearbeitung eines artikels, wie einer halbleiterscheibe, und verfahren zum betreiben eines lithographischen systems für die bearbeitung eines artikels, wie einer halbleiterscheibe
CN103582848B (zh) 2011-04-22 2018-05-08 迈普尔平版印刷Ip有限公司 在使用有部分反射位置标记的基底的光刻系统中的位置确定
US9383662B2 (en) 2011-05-13 2016-07-05 Mapper Lithography Ip B.V. Lithography system for processing at least a part of a target
CN103135371B (zh) * 2011-12-02 2015-02-11 上海微电子装备有限公司 基于分束偏折结构的小光斑离轴对准系统
CN103293884B (zh) * 2012-02-24 2014-12-17 上海微电子装备有限公司 用于光刻设备的离轴对准系统及对准方法
CN103777476B (zh) * 2012-10-19 2016-01-27 上海微电子装备有限公司 一种离轴对准系统及对准方法
US9030661B1 (en) * 2013-03-15 2015-05-12 Kla-Tencor Corporation Alignment measurement system
CN103226058B (zh) * 2013-04-02 2015-06-10 中国科学院长春光学精密机械与物理研究所 一种基于补偿算法的光栅衍射效率的测量方法
TWI626517B (zh) * 2013-08-22 2018-06-11 阿德文泰克全球有限公司 陰影遮罩-基板對準方法
US9891540B2 (en) * 2014-08-25 2018-02-13 Asml Holding N.V. Measuring method, measurement apparatus, lithographic apparatus and device manufacturing method
KR20170092522A (ko) 2014-09-08 2017-08-11 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 금속 격자 및 이의 측정 방법
CN104964649B (zh) * 2015-07-20 2017-07-28 哈尔滨工业大学 光栅分光式同步移相干涉测量装置及方法
WO2017140528A1 (en) 2016-02-19 2017-08-24 Asml Netherlands B.V. Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength-selective filter for use therein
WO2017167637A1 (en) 2016-03-30 2017-10-05 Asml Netherlands B.V. Substrate edge detection
CN107331643B (zh) * 2016-04-29 2021-02-12 上海微电子装备（集团）股份有限公司 对准装置及其方法
EP3309616A1 (de) * 2016-10-14 2018-04-18 ASML Netherlands B.V. Verfahren für die prüfung von einem substrat, metrologievorrichtung und lithografisches system
CN110709778B (zh) * 2017-06-02 2021-12-21 Asml荷兰有限公司 量测设备
KR102689649B1 (ko) 2019-09-17 2024-07-30 삼성전자주식회사 웨이퍼 검사 장치
CN111751012B (zh) * 2020-06-03 2021-12-14 中国科学院西安光学精密机械研究所 动态高分辨光学波前相位测量方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3071858D1 (en) * 1980-07-31 1987-01-22 Ibm Method and device for optical distance measurement
JPS5972728A (ja) 1982-10-20 1984-04-24 Canon Inc 自動整合装置
US4631416A (en) 1983-12-19 1986-12-23 Hewlett-Packard Company Wafer/mask alignment system using diffraction gratings
KR900004269B1 (ko) 1986-06-11 1990-06-18 가부시기가이샤 도시바 제 1물체와 제 2 물체와의 위치 맞추는 방법 및 장치
JPH0810123B2 (ja) 1986-09-12 1996-01-31 株式会社ニコン 光学装置
EP0323242A3 (de) 1987-12-28 1989-10-18 Kabushiki Kaisha Toshiba Verfahren und Vorrichtung zum Ausrichten von zwei Objekten, und Verfahren und Vorrichtung zum Einstellen eines gewünschten Spaltes zwischen zwei Objekten
US5171999A (en) * 1989-02-28 1992-12-15 Nikon Corporation Adjustable beam and interference fringe position
US5151754A (en) 1989-10-06 1992-09-29 Kabushiki Kaisha Toshiba Method and an apparatus for measuring a displacement between two objects and a method and an apparatus for measuring a gap distance between two objects
JP2893823B2 (ja) * 1990-03-20 1999-05-24 株式会社ニコン 位置合わせ方法及び装置
US5402230A (en) 1991-12-16 1995-03-28 Tsinghua University Heterodyne interferometric optical fiber displacement sensor for measuring displacement of an object
DE69535516T2 (de) 1994-01-24 2007-10-04 Asml Holding, N.V. Gitter-Gitter interferometrisches Ausrichtungssystem
US5801390A (en) * 1996-02-09 1998-09-01 Nikon Corporation Position-detection method and apparatus with a grating mark
US6160622A (en) * 1997-12-29 2000-12-12 Asm Lithography, B.V. Alignment device and lithographic apparatus comprising such a device

Also Published As

Publication number Publication date
EP1076264A3 (de) 2005-03-02
US6469793B1 (en) 2002-10-22
KR100577107B1 (ko) 2006-05-08
JP2001093833A (ja) 2001-04-06
EP1076264B1 (de) 2006-08-30
CA2314512A1 (en) 2001-02-10
EP1076264A2 (de) 2001-02-14
KR20010049931A (ko) 2001-06-15
DE60030374T2 (de) 2006-12-21

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