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DE60008025D1 - Zusammensetzungen und verfahren zum polieren und egalisieren von oberflächen - Google Patents

Zusammensetzungen und verfahren zum polieren und egalisieren von oberflächen

Info

Publication number
DE60008025D1
DE60008025D1 DE60008025T DE60008025T DE60008025D1 DE 60008025 D1 DE60008025 D1 DE 60008025D1 DE 60008025 T DE60008025 T DE 60008025T DE 60008025 T DE60008025 T DE 60008025T DE 60008025 D1 DE60008025 D1 DE 60008025D1
Authority
DE
Germany
Prior art keywords
polishing
composition
compositions
methods
planarizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60008025T
Other languages
English (en)
Other versions
DE60008025T2 (de
Inventor
Mingming Fang
L Mueller
A Dirksen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/440,401 external-priority patent/US6293848B1/en
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of DE60008025D1 publication Critical patent/DE60008025D1/de
Application granted granted Critical
Publication of DE60008025T2 publication Critical patent/DE60008025T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemically Coating (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
DE60008025T 1999-11-15 2000-11-15 Zusammensetzungen und verfahren zum polieren und egalisieren von oberflächen Expired - Lifetime DE60008025T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US440401 1999-11-15
US09/440,401 US6293848B1 (en) 1999-11-15 1999-11-15 Composition and method for planarizing surfaces
US625142 2000-07-25
US09/625,142 US6527817B1 (en) 1999-11-15 2000-07-25 Composition and method for planarizing surfaces
PCT/US2000/031653 WO2001036554A1 (en) 1999-11-15 2000-11-15 Composition and method for planarizing surfaces

Publications (2)

Publication Number Publication Date
DE60008025D1 true DE60008025D1 (de) 2004-03-04
DE60008025T2 DE60008025T2 (de) 2004-06-09

Family

ID=27032408

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60008025T Expired - Lifetime DE60008025T2 (de) 1999-11-15 2000-11-15 Zusammensetzungen und verfahren zum polieren und egalisieren von oberflächen

Country Status (11)

Country Link
US (2) US6527817B1 (de)
EP (1) EP1250390B1 (de)
JP (1) JP4943613B2 (de)
KR (1) KR100732078B1 (de)
CN (1) CN1160430C (de)
AT (1) ATE258577T1 (de)
AU (1) AU1660001A (de)
DE (1) DE60008025T2 (de)
HK (1) HK1050377A1 (de)
TW (1) TW524836B (de)
WO (1) WO2001036554A1 (de)

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US6468137B1 (en) * 2000-09-07 2002-10-22 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with an oxidized halide-containing polishing system
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
EP1425357A1 (de) * 2001-09-03 2004-06-09 Showa Denko K.K. Politur
US6755721B2 (en) 2002-02-22 2004-06-29 Saint-Gobain Ceramics And Plastics, Inc. Chemical mechanical polishing of nickel phosphorous alloys
US20040144038A1 (en) * 2002-12-09 2004-07-29 Junaid Ahmed Siddiqui Composition and associated method for oxide chemical mechanical planarization
US7422730B2 (en) * 2003-04-02 2008-09-09 Saint-Gobain Ceramics & Plastics, Inc. Nanoporous ultrafine α-alumina powders and sol-gel process of preparing same
US8025808B2 (en) 2003-04-25 2011-09-27 Saint-Gobain Ceramics & Plastics, Inc. Methods for machine ceramics
US7306748B2 (en) 2003-04-25 2007-12-11 Saint-Gobain Ceramics & Plastics, Inc. Methods for machining ceramics
EP1660606B1 (de) * 2003-07-11 2013-09-04 W.R. Grace & CO. - CONN. Abrasive teilchen zum chemisch-mechanischen polieren
JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP4249008B2 (ja) * 2003-12-25 2009-04-02 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
JP4267546B2 (ja) 2004-04-06 2009-05-27 花王株式会社 基板の製造方法
JP4027929B2 (ja) * 2004-11-30 2007-12-26 花王株式会社 半導体基板用研磨液組成物
US8353740B2 (en) 2005-09-09 2013-01-15 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
US7708904B2 (en) 2005-09-09 2010-05-04 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
KR20070041330A (ko) * 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물
KR101131796B1 (ko) 2006-12-20 2012-03-30 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 무기 비-금속성 피가공물 기계 가공방법
KR101418626B1 (ko) * 2007-02-27 2014-07-14 히타치가세이가부시끼가이샤 금속용 연마액 및 연마방법
CA2700413A1 (en) * 2007-10-05 2009-04-09 Saint-Gobain Ceramics & Plastics, Inc. Polishing of sapphire with composite slurries
CN101815771A (zh) * 2007-10-05 2010-08-25 圣戈本陶瓷及塑料股份有限公司 改进的碳化硅颗粒及其制造方法和使用方法
US8523968B2 (en) * 2008-12-23 2013-09-03 Saint-Gobain Abrasives, Inc. Abrasive article with improved packing density and mechanical properties and method of making
US20120264303A1 (en) * 2011-04-15 2012-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing slurry, system and method
JP5945123B2 (ja) * 2012-02-01 2016-07-05 株式会社フジミインコーポレーテッド 研磨用組成物
JP2013247341A (ja) 2012-05-29 2013-12-09 Fujimi Inc 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法
MA35300B1 (fr) * 2013-01-18 2014-08-01 Univ Hassan 1Er Settat Optimisation des phosphates pour les traitements de surface et les opérations de polissage
CN105378901B (zh) * 2013-07-05 2020-09-15 富士胶片电子材料有限公司 蚀刻剂、蚀刻方法和蚀刻剂制备液
US20150114928A1 (en) * 2013-10-30 2015-04-30 Jia-Ni Chu Abrasive Particles for Chemical Mechanical Polishing
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
TWI629325B (zh) * 2014-10-21 2018-07-11 卡博特微電子公司 鈷凹陷控制劑
US10253216B2 (en) 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
US11286403B2 (en) 2018-07-20 2022-03-29 Dongjin Semichem Co., Ltd Chemical mechanical polishing composition, chemical mechanical polishing slurry and method for polishing substrate

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US4057939A (en) 1975-12-05 1977-11-15 International Business Machines Corporation Silicon wafer polishing
US4169337A (en) 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US4304575A (en) 1980-03-20 1981-12-08 Nalco Chemical Company Preparation of large particle silica sols
US4462188A (en) 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JP2877440B2 (ja) * 1989-06-09 1999-03-31 ナルコ ケミカル カンパニー コロイド状シリカ研磨性スラリー
US4959113C1 (en) 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5137544A (en) 1990-04-10 1992-08-11 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US5228886A (en) 1990-10-09 1993-07-20 Buehler, Ltd. Mechanochemical polishing abrasive
US5264010A (en) 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
BE1007281A3 (nl) 1993-07-12 1995-05-09 Philips Electronics Nv Werkwijze voor het polijsten van een oppervlak van koper of een in hoofdzaak koper bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze, röntgenstralingcollimerend element en röntgenstralingreflecterend element, beide voorzien van een volgens de werkwijze gepolijst oppervlak en polijstmiddel geschikt voor toepassing in de werkwijze.
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5605490A (en) 1994-09-26 1997-02-25 The United States Of America As Represented By The Secretary Of The Army Method of polishing langasite
US5693239A (en) 1995-10-10 1997-12-02 Rodel, Inc. Polishing slurries comprising two abrasive components and methods for their use
JP3359479B2 (ja) 1995-11-07 2002-12-24 三井金属鉱業株式会社 研磨材、その製造方法及び研磨方法
EP0773270B1 (de) 1995-11-10 2001-01-24 Tokuyama Corporation Poliersuspensionen und Verfahren zu ihrer Herstellung
JPH09190626A (ja) 1995-11-10 1997-07-22 Kao Corp 研磨材組成物、磁気記録媒体用基板及びその製造方法並びに磁気記録媒体
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US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
JP4052607B2 (ja) * 1998-04-20 2008-02-27 株式会社東芝 研磨剤及び半導体基板のポリッシング方法
US6159076A (en) * 1998-05-28 2000-12-12 Komag, Inc. Slurry comprising a ligand or chelating agent for polishing a surface
US6132298A (en) 1998-11-25 2000-10-17 Applied Materials, Inc. Carrier head with edge control for chemical mechanical polishing
JP2000160139A (ja) * 1998-12-01 2000-06-13 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces

Also Published As

Publication number Publication date
TW524836B (en) 2003-03-21
AU1660001A (en) 2001-05-30
US20030124852A1 (en) 2003-07-03
JP4943613B2 (ja) 2012-05-30
HK1050377A1 (en) 2003-06-20
US6716755B2 (en) 2004-04-06
WO2001036554A1 (en) 2001-05-25
US6527817B1 (en) 2003-03-04
KR100732078B1 (ko) 2007-06-27
ATE258577T1 (de) 2004-02-15
CN1399668A (zh) 2003-02-26
DE60008025T2 (de) 2004-06-09
KR20020056913A (ko) 2002-07-10
CN1160430C (zh) 2004-08-04
JP2003514949A (ja) 2003-04-22
EP1250390A1 (de) 2002-10-23
EP1250390B1 (de) 2004-01-28

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