[go: up one dir, main page]

DE528516C - Process for the production of thin bi-layers which are heated when they are deposited and which are used in particular to measure a magnetic field - Google Patents

Process for the production of thin bi-layers which are heated when they are deposited and which are used in particular to measure a magnetic field

Info

Publication number
DE528516C
DE528516C DE1930528516D DE528516DD DE528516C DE 528516 C DE528516 C DE 528516C DE 1930528516 D DE1930528516 D DE 1930528516D DE 528516D D DE528516D D DE 528516DD DE 528516 C DE528516 C DE 528516C
Authority
DE
Germany
Prior art keywords
layers
heated
magnetic field
measure
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1930528516D
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE528516C publication Critical patent/DE528516C/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Devices For Use In Laboratory Experiments (AREA)

Description

Verfahren zur Herstellung dünner, bei ihrer Niederschlagung geheizter Bi-Schichten, die insbesondere zur Ausmessung eines magnetischen Feldes dienen Die Methode der Ausmessung eines magnetischen Feldes durch Messung der Widerstandsänderung einer Wismutspirale leidet an denn Nachteil, daß die Bi-Spiralen eine erliebliche Flächenausdehnung besitzen; selbst die kleinsten bekannten Spiralen haben noch immer eine Fläche von etwa 2o mm=. Die Versuche, den Meßkörper kleiner zu gestaltete, indem man ihn etwa in Schichtform herstellte, mußten daran scheitern, daß alle Schichten zu wenig Widerstandsänderung zeigten gegenüber derjenigen einer Bi-Spirale im gleichen Felde.Process for the production of thinner ones, which are heated when they are precipitated Bi-layers, which are used in particular to measure a magnetic field Method of measuring a magnetic field by measuring the change in resistance a bismuth spiral suffers from the disadvantage that the bi-spirals are a pleasant one Have surface area; even the smallest known spirals still have an area of about 20 mm =. The attempts to make the measuring body smaller, if one produced it in the form of layers, for example, it had to fail because all layers showed too little change in resistance compared to that of a Bi-spiral in the same Field.

P. K a p i t z a (Proc. Roy. Soc. London A, 119, 41 3 und 428, 1928) hat Bi-Schichten hergestellt durch Verdampfen des Bi im Vakuum unter gleichzeitiger Erwärmung der Auffangeplatte auf 2oo° C. Diese Bi-Schichten haben eine Widerstandsänderung von 8o bis 9o °/" in einem Felde von etwa 28 ooo Gauß, während eine Bi-Spirale im gleichen Felde etwa id.o °/o Widerstandsänderung erfährt. Da die Dicke dieser Schichten 1/2 bis i tim beträgt, besitzen sie aber einen ganz geringen Widerstand, dessen Messung besondere Vorsichtsmaßregeln erfordert und der die Verwendung derartiger Schichten in der Praxis ungeeignet macht.P. K apitza (Proc. Roy. Soc. London A, 119, 41 3 and 428, 1928) produced Bi layers by evaporating the Bi in a vacuum while heating the collecting plate to 200 ° C. These Bi layers have a Resistance change of 80 to 90 ° / "in a field of about 28,000 Gauss, while a bi-spiral in the same field experiences about id.o ° / o change in resistance. Since the thickness of these layers is 1/2 to i tim, they have but a very low resistance, the measurement of which requires special precautionary measures and which makes the use of such layers unsuitable in practice.

Der Vorteil des Gegenstandes der Erfindung besteht darin, daß einmal dünne Schichtete verwendet «-erden zur Erzielung praktisch meßbarer Widerstände, und daß der Auffangekörper während des Verdampfens des Bi und der Niederschlagsbildung auf über 270° C (Schmelzpunkt des Bi) geheizt wird, da dann die Schichten im Magnetfeld noch höhere Widerstandsänderung zeigen (9o bis ioo °/p bei 28 ooo Gauß).The advantage of the object of the invention is that once thin layers of earth are used to achieve practically measurable resistances, and that the collecting body is during the evaporation of the Bi and the formation of precipitates is heated to over 270 ° C (melting point of Bi), because then the layers in the magnetic field show an even higher change in resistance (90 to 100 ° / p at 28,000 Gauss).

Die Schichten werden z. B. auf folgende Weise hergestellt: In einem zylindrischen Quarzgefäß von 4: cm Durchmesser und i i cm Länge, dessen unteres Ende verjüngt und zu einem Schmelztiegel ausgebildet ist (Länge 2 cm, Durchmesser i cm) wird Bi verdampft und auf einem etwa 5 cm vom Rande des Schmelztiegels entfernten Auffangekörper (z. B. einem Glasplättchen) miedergeschlagen. Die Auffangeplatte wird an eine Kupferunterlage angepreßt und von der Rückseite her durch eine flache Platinspirale geheizt. Das ganze Quarzgefäß wird vor dem Verdampfen stark nusgeheizt. Das Gefäß steht dauernd, auch während des Verdampfens, mit einer Diffusionspumpe und flüssiger Luft in Verbindung. Auf diese Weise wurde ein Glasplättchen von 2 X:2 mm- mit einer i ,u dicken Bi-Schicht überzogen. Die Schicht war grau, nicht blank, ihr Widerstand betrug 1,7 Ohm, entsprechend einem spezifischen Widerstand von 117 # 1o.74, ihr Widerstand änderte sich itn Magnetfelde (28 ooo Gauß) um 9o %.The layers are z. B. prepared in the following way: In a cylindrical quartz vessel of 4: cm diameter and ii cm length, the lower end of which is tapered and formed into a crucible (length 2 cm, diameter 1 cm) Bi is evaporated and on an approximately 5 cm from The collecting body (e.g. a glass plate) removed from the edge of the crucible is knocked down. The collecting plate is pressed against a copper base and heated from the rear by a flat platinum spiral. The entire quartz vessel is strongly heated before it evaporates. The vessel is in constant contact with a diffusion pump and liquid air, even during evaporation. In this way a small glass plate measuring 2 ×: 2 mm was coated with an i, u thick layer of Bi. The layer was gray, not bare, its resistance was 1.7 ohms, corresponding to a specific resistance of 117 # 10.74, its resistance changed by 90 % with magnetic fields (28,000 Gauss).

Claims (1)

PATENTANSPRUCH: Verfahren zur Herstellung dünner, bei ihrer Niederschlagung geheizter Bi-Schichten, die insbesondere zur Ausmessung eines magnetischen Feldes dienen, dadurch gekennzeichnet, daß die Heiztemperatur der Schicht bei der 'Niederschlagung auf 27ö° C und mehr gehalten wird.PATENT CLAIM: Process for the production of thinner ones, when they are knocked down heated bi-layers, which are used in particular to measure a magnetic field serve, characterized in that the heating temperature of the layer in the 'precipitation is kept at 27 ° C and more.
DE1930528516D 1930-06-29 1930-06-29 Process for the production of thin bi-layers which are heated when they are deposited and which are used in particular to measure a magnetic field Expired DE528516C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE528516T 1930-06-29

Publications (1)

Publication Number Publication Date
DE528516C true DE528516C (en) 1931-06-27

Family

ID=6553715

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1930528516D Expired DE528516C (en) 1930-06-29 1930-06-29 Process for the production of thin bi-layers which are heated when they are deposited and which are used in particular to measure a magnetic field

Country Status (1)

Country Link
DE (1) DE528516C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0238110A1 (en) * 1986-02-17 1987-09-23 Koninklijke Philips Electronics N.V. Magnetic head with magnetoresistive element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0238110A1 (en) * 1986-02-17 1987-09-23 Koninklijke Philips Electronics N.V. Magnetic head with magnetoresistive element

Similar Documents

Publication Publication Date Title
DE623488C (en)
DE1465702A1 (en) Process for making a difficult-to-melt thin-layer metal resistor durable
DE528516C (en) Process for the production of thin bi-layers which are heated when they are deposited and which are used in particular to measure a magnetic field
DE755294C (en) Process for the production of peel-off embossing films
DE1590867A1 (en) Process for the production of resistance elements
DE1540167C3 (en) Cermet resistance layer for a potentiometer
DE102015006057A1 (en) Sheet resistance with a carbonaceous resistance material and method for its preparation
DE1204738B (en) Electrical sheet resistance
DE2400368C3 (en) Electrophotographic recording material
DE1796199A1 (en) Process for the production of magnetic vapor deposition layers
DE828672C (en) Process for the production of silver plating preparations
DE2050556C3 (en) Process for the production of a highly refractive, optically homogeneous and absorption-free oxide layer
DE591735C (en) Process for the production of high and low resistance
DE465699C (en) Cathode consisting of pieces of different metals for the production of electrical resistors
DE1790082B2 (en) METAL FILM RESISTANT ELEMENT AND METHOD OF MANUFACTURING IT
AT160205B (en) Electronical devices.
DE722287C (en) Electric capacitor
DE2318244A1 (en) CELLULOSE ACETATE MEMBRANE FOR REVERSE OSMOSIS AND METHOD OF MANUFACTURING
DE767327C (en) Process for the production of virtually grain-free luminous layers
DE841625C (en) Process for the production of reflection-reducing layers, e.g. B. on glass
DE1254428B (en) Process for the production of photosensitive lead selenide layers by vapor deposition in a vacuum
DE465278C (en) Process for the manufacture of oxide cathodes
DE750597C (en) Process for the production of homogeneous, coherent silver sulfide layers intended for resistance photocells
DE652142C (en) Process for the production of high frequency resistors
DE457320C (en) High resistance