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DE4192352T - - Google Patents

Info

Publication number
DE4192352T
DE4192352T DE19914192352 DE4192352T DE4192352T DE 4192352 T DE4192352 T DE 4192352T DE 19914192352 DE19914192352 DE 19914192352 DE 4192352 T DE4192352 T DE 4192352T DE 4192352 T DE4192352 T DE 4192352T
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19914192352
Other languages
German (de)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE4192352T publication Critical patent/DE4192352T/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
DE19914192352 1990-10-05 1991-10-02 Withdrawn DE4192352T (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59342390A 1990-10-05 1990-10-05

Publications (1)

Publication Number Publication Date
DE4192352T true DE4192352T (fr) 1992-10-08

Family

ID=24374648

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19914192352 Withdrawn DE4192352T (fr) 1990-10-05 1991-10-02

Country Status (4)

Country Link
JP (1) JPH04505830A (fr)
DE (1) DE4192352T (fr)
GB (1) GB2254187A (fr)
WO (1) WO1992006497A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2965283B2 (ja) * 1994-07-13 1999-10-18 ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド 薄膜トランジスタの製造方法
KR100248123B1 (ko) * 1997-03-04 2000-03-15 구본준 박막트랜지스터및그의제조방법
FR2761809B1 (fr) * 1997-03-04 2002-03-01 Lg Electronics Inc Transistor en couche mince et son procede de fabrication
GB2338105B (en) * 1997-03-04 2000-04-12 Lg Electronics Inc Method of making a thin film transistor
US6333518B1 (en) 1997-08-26 2001-12-25 Lg Electronics Inc. Thin-film transistor and method of making same
KR100430950B1 (ko) * 1998-09-01 2004-06-16 엘지.필립스 엘시디 주식회사 박막트랜지스터 및 그 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0071244B1 (fr) * 1981-07-27 1988-11-23 Kabushiki Kaisha Toshiba Transistor à couche mince et procédé de fabrication
US4651185A (en) * 1983-08-15 1987-03-17 Alphasil, Inc. Method of manufacturing thin film transistors and transistors made thereby
JPS62239579A (ja) * 1986-04-10 1987-10-20 Alps Electric Co Ltd 薄膜トランジスタの製造方法
DE3752301T2 (de) * 1986-11-29 2000-03-23 Sharp K.K., Osaka Verfahren zur Herstellung eines Dünnschichttransistors
US4767723A (en) * 1987-10-30 1988-08-30 International Business Machines Corporation Process for making self-aligning thin film transistors

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Appl. Phys. Lett. 54 (21), May 1989, pp. 2079-2081 *
Technische Rundschau 50/86, pp. 76-81 *

Also Published As

Publication number Publication date
WO1992006497A1 (fr) 1992-04-16
GB9209424D0 (en) 1992-07-22
GB2254187A (en) 1992-09-30
JPH04505830A (ja) 1992-10-08

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: SIEB, R., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 6947

8110 Request for examination paragraph 44
8120 Willingness to grant licences paragraph 23
8139 Disposal/non-payment of the annual fee