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DE4123858C1 - Semiconductor laser array stabilising arrangement - provides fibre-shaped reflectors so that radiation characteristic extends as ray along X=axis - Google Patents

Semiconductor laser array stabilising arrangement - provides fibre-shaped reflectors so that radiation characteristic extends as ray along X=axis

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Publication number
DE4123858C1
DE4123858C1 DE19914123858 DE4123858A DE4123858C1 DE 4123858 C1 DE4123858 C1 DE 4123858C1 DE 19914123858 DE19914123858 DE 19914123858 DE 4123858 A DE4123858 A DE 4123858A DE 4123858 C1 DE4123858 C1 DE 4123858C1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser array
laser
axis
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19914123858
Other languages
German (de)
Inventor
Peter Dr. 8059 Langenpreising De Deimel
Thorsteinn Dipl.-Phys. 8000 Muenchen De Halldorsson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
Messerschmitt Bolkow Blohm AG
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Priority to DE19914123858 priority Critical patent/DE4123858C1/en
Application granted granted Critical
Publication of DE4123858C1 publication Critical patent/DE4123858C1/en
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Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The semiconductor laser array (HLA) is coupled to an external system of passive wave guides (12) via the laser window (11). Each wave guide (12) is connected to a Y-connection point which leads into a Bragg grating (14). The laser array may be damped by an antireflective layer on the side of the array nearest the wave guides. The reflection of this layer is less than 1 per cent. The Bragg grating may be used as a laser mirror. USE - Stabilising semiconductor laser array in diode pumped fixed body laser, fibre laser or a local oscillator.

Description

Die Erfindung bezieht sich auf eine Anordnung zur Stabilisierung von Halbleiter-Laserarrays (HLA) gemäß dem Gattungsbegriff des Anspruches 1.The invention relates to an arrangement for stabilizing Semiconductor laser arrays (HLA) according to the preamble of claim 1.

Solche HLA werden vornehmlich als lokale Oszillatoren oder als Pumpquellen für Festkörperlaser und Faserlaser verwendet. Um hierfür eingesetzt werden zu können, ist es erforderlich, das HLA zu stabilisieren. Nun ist es be­ kannt, daß die HLA′s eine Abstrahlcharakteristik aufweisen, die einer sogenannten "Hasenohr-Verteilung" gleicht, das heißt, die abgestrahlte Intensität verläuft nicht entlang der z-Achse, sondern in einem bestimm­ ten Winkel dazu, der von der internen Feldverteilung der optischen Mode abhängt. Die Schemaskizzen in den Fig. 2a und 2b verdeutlichen diese Ge­ gebenheit und die Wunschvorstellung.Such HLA are mainly used as local oscillators or as pump sources for solid-state lasers and fiber lasers. In order to be used for this, it is necessary to stabilize the HLA. Now it is known that the HLA's have a radiation characteristic that is similar to a so-called "rabbit ear distribution", that is, the radiated intensity does not run along the z-axis, but at a certain angle to it, that of the internal field distribution of the optical mode depends. The schematic sketches in FIGS . 2a and 2b illustrate this fact and the wish.

Aus den Druckschriften US-PS 49 33 301 und US-PS 48 09 288 sind Stabili­ sierungsanordnungen bekannt geworden, die ein System von aktiven Wellen­ leitern enthalten, von denen jeder mit einer Y-Weiche versehen ist, die in ein Bragg-Gitter mündet.From the publications US-PS 49 33 301 and US-PS 48 09 288 are Stabili Sation arrangements become known that a system of active waves contain conductors, each of which is provided with a Y-switch, which in a Bragg grate opens out.

Aus der EP 02 70 381 A2 ist eine Anordnung zur Erzeugung einer gleichförmigen Nahfeld-Intensitätsverteilung von Halbleiter-Laserarrays bekannt, bei der das HLA über die Öffnungsfenster seiner Laser an einen externen Wellenleiter angekoppelt ist.EP 02 70 381 A2 describes an arrangement for generating a uniform near-field intensity distribution of semiconductor laser arrays known, in which the HLA via the opening window of its laser to one external waveguide is coupled.

In den Druckschriften "0°phase mode operation in phased-array laser diode with symmetrically branching waveguide" von Taneya u. a. in Appl. Phys.Lett. 47 (4), 15. Aug. 85, Seiten 341 bis 343 und "Compact hybrid reso­ nant optical reflector lasers with very narrow linewidths" von Ackerman u. a. in Appl.Phys.Lett. 58 (5), 4. Febr. 91, Seiten 449 bis 451 sind die theoretischen Grundlagen für den vorbeschriebenen Sachverhalt angegeben. In the publications "0 ° phase mode operation in phased array laser diode with symmetrically branching waveguide "by Taneya et al. in Appl. Phys. Lat. 47 (4), Aug. 15, 85, pages 341 to 343 and "Compact hybrid reso nant optical reflector lasers with very narrow linewidths "from Ackerman u. a. in Appl.Phys.Lett. 58 (5), Feb. 4, 91, pages 449 to 451 are the theoretical basis for the above-mentioned facts.  

Zum weiteren Stand der Technik wird noch auf die Druckschriften DE 36 43 648 A1 und Baberg, F., Luft, J.: "GaA1As-Halbleiterlaser für hohe Leistungen" in DE-Z.: "Laser und Optoelektronik", Vol. 20, Nr. 4, 1988, Seiten 49 bis 53, sowie auf Urquhart P.: "Review of rare earth doped fibre lasers and amplifiers" in GB-Z.: "IEE PROCEEDINGS", Vol. 135, Pt. J., Nr. 6, Dezember 1988, Seiten 385 bis 407, und Smith, D. W.: "Tech­ niques for multigigabit coherent optical transmission" in US-Z.: "Journal of Lightwave Technology", Vol. LT-5, No. 10, 1987, Seiten 1466 bis 1478, verwiesen.For further state of the art is still on the publications DE 36 43 648 A1 and Baberg, F., Luft, J .: "GaA1As semiconductor lasers for high Services "in DE-Z .:" Lasers and Optoelectronics ", Vol. 20, No. 4, 1988, pages 49 to 53, and on Urquhart P .: "Review of rare earth doped fiber lasers and amplifiers "in GB-Z .:" IEE PROCEEDINGS ", Vol. 135, Pt. J., No. 6, December 1988, pages 385 to 407, and Smith, D.W .: "Tech niques for multigigabit coherent optical transmission "in US: "Journal of Lightwave Technology", Vol. LT-5, No. 10, 1987, pages 1466 until 1478.

Der vorliegenden Erfindung liegt die Aufgabe zugrunde, eine Anord­ nung der eingangs genannten Art aufzuzeigen, deren Abstrahlcharakteristik so stabilisiert ist, daß sie gebündelt entlang der z-Achse verläuft.The present invention has for its object an arrangement of the type mentioned at the beginning, to show their radiation characteristics is so stabilized that it is bundled along the z-axis runs.

Diese Aufgabe wird durch die im Anspruch 1 aufgezeigten Maßnahmen ge­ löst. In den Unteransprüchen sind Ausgestaltungen und Weiterbildungen angegeben, und in der nachfolgenden Beschreibung wird ein Ausführungs­ beispiel erläutert und zeichnerisch skizziert. Es zeigtThis object is achieved by the measures outlined in claim 1 solves. Refinements and developments are in the subclaims is given, and in the description below, an execution example explained and sketched. It shows

Fig. 1 ein Schemabild der Lösung eines Ausführungsbeispiels zur Erzie­ lung der gewünschten Charakteristik, Fig. 1 is a schematic diagram of the solution of an embodiment of the lung Erzie the desired characteristic,

Fig. 2a ein Schemabild der "Hasenohrprofil"-Charakteristik und deren Lage zur z-Achse, FIG. 2a is a schematic image of the "rabbit ear profile" characteristics and their location to the z axis,

Fig. 2b ein Schemabild der gewünschten Charakteristik. Fig. 2b is a schematic image of the desired characteristic.

Das in Fig. 1 skizzierte Ausführungsbeispiel sieht vor, daß der HLA über die Öffnungsfenster 11 seines Lasers an ein extern angebrachtes System von optischen Wellenleitern 12 angekoppelt wird, wodurch bewirkt wird, daß benachbarte Laser im Array über die Reflexion eines Bragg-Gitters 14 phasengerecht gekoppelt werden, was nunmehr dazu führt, daß die Abstrahl­ charakteristik am gegenüberliegenden zweiten Laserspiegel die gewünschte Form entlang der z-Achse aufweist. Das Bragg-Gitter 14, in das die Y- Weichen 13 jedes Wellenleiters 12 münden, dient als der andere Laserspiegel, der nur eine wohldefinierte Wellenlänge reflektiert, beispielsweise 0,83 µm bei GaAs-, 1,3 µm oder 1,55 µm bei InGaAsP-Systemen.The exemplary embodiment outlined in FIG. 1 provides that the HLA is coupled via the opening window 11 of its laser to an externally attached system of optical waveguides 12 , as a result of which neighboring lasers in the array are coupled in phase via the reflection of a Bragg grating 14 are, which now leads to the fact that the radiation characteristic at the opposite second laser mirror has the desired shape along the z-axis. The Bragg grating 14 , into which the Y-switches 13 of each waveguide 12 open, serves as the other laser mirror, which only reflects a well-defined wavelength, for example 0.83 μm for GaAs, 1.3 μm or 1.55 μm for InGaAsP systems.

Dies führt dazu, daß die Linienbreite des HLA's stark verringert wird. Das HLA muß an seiner zu den Wellenleitern 12 hin gerichteten Seite mit einer Antireflexschicht - aus beispielsweise Al₂O₃ mit R<1% - be­ dampft sein, und die Wellenleiter 12 werden in bekannter Weise vorzugs­ weise aus Siliziumoxinitrid hergestellt.As a result, the line width of the HLA is greatly reduced. The HLA must be steamed on its side facing the waveguides 12 with an anti-reflective layer - for example Al₂O₃ with R <1% -, and the waveguides 12 are preferably made in a known manner from silicon oxynitride.

Durch diese überraschend einfache Anordnung ist es nunmehr gelungen, die Abstrahlcharakteristik eines HLA's so zu verändern, daß die Abstrahlung der optischen Intensität gebündelt entlang der z-Achse erfolgt, wobei gleichzeitig die optische Linienbreite der abgestrahlten Leistung stark reduziert wird.This surprisingly simple arrangement has now made it possible Changing the radiation characteristics of an HLA so that the radiation the optical intensity is bundled along the z-axis, where at the same time the optical line width of the radiated power is strong is reduced.

Claims (4)

1. Anordnung zur Stabilisierung eines Halbleiter-Laserarrays in diodengepumpten Festkörperlasern, Faserlasern oder lokalen Oszillatoren, dadurch gekennzeichnet, daß das Halbleiter-Laserarray über die Öffnungsfenster (11) seiner Laser an ein extern angeordnetes System von passiven Wellenleitern (12) gekoppelt ist, von denen jeder (12) mit einer Y-Weiche (13) versehen ist, die in ein Bragg-Gitter (14) mündet.1. Arrangement for stabilizing a semiconductor laser array in diode-pumped solid-state lasers, fiber lasers or local oscillators, characterized in that the semiconductor laser array is coupled via the opening window ( 11 ) of its laser to an externally arranged system of passive waveguides ( 12 ), of which each ( 12 ) is provided with a Y-switch ( 13 ) which opens into a Bragg grating ( 14 ). 2. Anordnung nach Anspruch 1, dadurch gekennzeichnet, daß das Halbleiter-Laserarray an seiner den Wellenleitern (12) zugewandten Seite mit einer Antireflex­ schicht bedampft ist, deren Reflexionskoeffizient kleiner als 1% ist.2. Arrangement according to claim 1, characterized in that the semiconductor laser array is vapor-coated on its side facing the waveguides ( 12 ) with an antireflection layer whose reflection coefficient is less than 1%. 3. Anordnung nach Anspruch 2, dadurch gekennzeichnet, daß das Bragg-Gitter (14) als Laserspiegel eingesetzt ist.3. Arrangement according to claim 2, characterized in that the Bragg grating ( 14 ) is used as a laser mirror. 4. Anordnung nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß die Wellenleiter (12) aus Siliziumoxinitrid hergestellt sind.4. Arrangement according to one of claims 1 to 3, characterized in that the waveguides ( 12 ) are made of silicon oxynitride.
DE19914123858 1991-07-18 1991-07-18 Semiconductor laser array stabilising arrangement - provides fibre-shaped reflectors so that radiation characteristic extends as ray along X=axis Expired - Lifetime DE4123858C1 (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4410780A1 (en) * 1994-03-28 1995-10-05 Siemens Ag Integrated integral interferometer and laser appts. for communications industry
WO1998048495A2 (en) * 1997-04-18 1998-10-29 Siemens Aktiengesellschaft Laser device
FR2826193A1 (en) * 2001-06-15 2002-12-20 Thales Sa HIGH SPECTRUM LASER DENSE LIGHT SOURCE NETWORK
DE4318752B4 (en) * 1993-06-05 2004-02-05 Robert Bosch Gmbh Resonator device with optical waveguide made of a polymer
CN104236471B (en) * 2014-10-09 2016-11-16 中国石油化工股份有限公司 Y-type double FBG fiber optic vibration sensor for online monitoring of coking tower hydraulic decoking

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3643648A1 (en) * 1985-12-19 1987-07-16 Spectra Physics LASER DIODE-PUMPED SOLID LASER
EP0270381A2 (en) * 1986-12-05 1988-06-08 Sharp Kabushiki Kaisha A semiconductor light-emitting apparatus
US4809288A (en) * 1987-03-04 1989-02-28 Spectra Diode Laboratories, Inc. Hybrid Y-junction laser array
US4933301A (en) * 1989-01-27 1990-06-12 Spectra Diode Laboratories, Inc. Method of forming a semiconductor laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3643648A1 (en) * 1985-12-19 1987-07-16 Spectra Physics LASER DIODE-PUMPED SOLID LASER
EP0270381A2 (en) * 1986-12-05 1988-06-08 Sharp Kabushiki Kaisha A semiconductor light-emitting apparatus
US4809288A (en) * 1987-03-04 1989-02-28 Spectra Diode Laboratories, Inc. Hybrid Y-junction laser array
US4933301A (en) * 1989-01-27 1990-06-12 Spectra Diode Laboratories, Inc. Method of forming a semiconductor laser

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BABERG, F., LUFT, J.: GaAlAs - Halbleiterlaser für hohe Leistungen In DE-Z.: Laser und Optoelektronik, Vol. 20, No. 4, 1988, S. 49-53 *
SMITH, D.W.: Techniques for Multigigabit Coherent Optical Transmission. In: US-Z.: Journal of Lightwave Technology, Vol. LT-5, No. 10, 1987, S. 1466-1478 *
URQUHART, P.: Review of rare earth doped fibre lasers and amplifiers. In GB-Z.: IEE Proceedings, Vol. 135, Pt. J No. 6, 1988, S. 385-407 *
US-B.: Thin Film Processes, Eds.: J.L.Vossen, W. Kern, Academic Press 1978, S. 298-301, 421-424 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4318752B4 (en) * 1993-06-05 2004-02-05 Robert Bosch Gmbh Resonator device with optical waveguide made of a polymer
DE4410780A1 (en) * 1994-03-28 1995-10-05 Siemens Ag Integrated integral interferometer and laser appts. for communications industry
WO1998048495A2 (en) * 1997-04-18 1998-10-29 Siemens Aktiengesellschaft Laser device
WO1998048495A3 (en) * 1997-04-18 1999-01-28 Siemens Ag Laser device
FR2826193A1 (en) * 2001-06-15 2002-12-20 Thales Sa HIGH SPECTRUM LASER DENSE LIGHT SOURCE NETWORK
CN104236471B (en) * 2014-10-09 2016-11-16 中国石油化工股份有限公司 Y-type double FBG fiber optic vibration sensor for online monitoring of coking tower hydraulic decoking

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D1 Grant (no unexamined application published) patent law 81
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Owner name: DEUTSCHE AEROSPACE AG, 8000 MUENCHEN, DE

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Owner name: DAIMLER-BENZ AEROSPACE AKTIENGESELLSCHAFT, 80804 M

8339 Ceased/non-payment of the annual fee