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DE3928195C2 - Circuit arrangement for quickly opening a circuit breaker - Google Patents

Circuit arrangement for quickly opening a circuit breaker

Info

Publication number
DE3928195C2
DE3928195C2 DE19893928195 DE3928195A DE3928195C2 DE 3928195 C2 DE3928195 C2 DE 3928195C2 DE 19893928195 DE19893928195 DE 19893928195 DE 3928195 A DE3928195 A DE 3928195A DE 3928195 C2 DE3928195 C2 DE 3928195C2
Authority
DE
Germany
Prior art keywords
circuit
circuit arrangement
circuit breaker
effect transistor
control electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19893928195
Other languages
German (de)
Other versions
DE3928195A1 (en
Inventor
Friedhelm Zucker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson Licensing SAS
Original Assignee
Deutsche Thomson Brandt GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6387910&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3928195(C2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Deutsche Thomson Brandt GmbH filed Critical Deutsche Thomson Brandt GmbH
Priority to DE19893928195 priority Critical patent/DE3928195C2/en
Publication of DE3928195A1 publication Critical patent/DE3928195A1/en
Application granted granted Critical
Publication of DE3928195C2 publication Critical patent/DE3928195C2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches

Landscapes

  • Electronic Switches (AREA)

Description

Die Erfindung betrifft eine Schaltungsanordung mit einem Feldeffekttransistor, der als elektronischer Leistungsschalter zum Schalten einer Last dient. Wenn zur Durchschaltung, d. h. zur Ab- und Zuschaltung von hohen Leistungen Feldeffekttransi­ storen verwendet werden, kann es vorkommen, daß diese infolge ihrer anhaftenden hohen Eingangskapazität nicht schnell genug abgeschaltet werden, weil der bis zur Sättigung betriebene Leistungsschalter nicht schnell genug entladen werden kann. Es wurden deshalb bereits komplizierte Ansteuerschaltungen vorgeschlagen, deren Aufwand jedoch beträchtlich ist. Auch werden bei den bekannten Schaltungen negative Betriebsspannungen verwendet. Das bedeutet aber den Aufwand zusätzlicher Spannungsquellen. Wenn das Bezugspotential zur vollständigen Sperrung des bis in die Sättigung betriebenen Schalters verwendet wird, ist die dazu erforderliche Zeit oftmals viel zu lang.The invention relates to a circuit arrangement with a field effect transistor, which as electronic circuit breaker is used to switch a load. If to Switching, d. H. for switching off and on high power field effect transi can be used as a result of their adherence high input capacity can not be switched off quickly enough because of the Saturation operated circuit breakers cannot be discharged quickly enough. It Therefore complicated control circuits have already been proposed However, effort is considerable. Also in the known circuits negative operating voltages used. But that means the effort additional voltage sources. If the reference potential is complete Locking the switch operated up to saturation is used to do so often too long.

Gemäß EP 0 239 861 A1 ist bereits ein MOSFET-Schalter mit induktiver Last bekannt, bei dem die induktive Last zwischen dem Sourceanschluß des Leistungs- MOSFET und Bezugspotential liegt und zum schnellen Abbau von in der induktiven Last gespeicherter Energie eine höhere Gegenspannung als bei einer parallel geschalteten Diode zugelassen wird. Dazu ist eine Reihenschaltung aus einem FET und einer Zenerdiode zwischen der Steuerelektrode des Leistungs-MOSFET und Bezugspotential vorgesehen. Zum Beschleunigen des Einschaltvorgangs ist zwischen dem Versorgungspotential und der Steuerelektrode des Leistungs-MOSFET ein weiterer FET vorhanden.According to EP 0 239 861 A1 there is already a MOSFET switch with an inductive load known in which the inductive load between the source connection of the power MOSFET and reference potential and for the rapid degradation of the inductive Load stored energy has a higher counter voltage than with a parallel switched diode is permitted. This is a series connection from an FET and a zener diode between the control electrode of the power MOSFET and Reference potential provided. To speed up the switch-on process, between the supply potential and the control electrode of the power MOSFET further FET available.

Es ist gemäß WO 89/06070 weiterhin ein Hybrid-Darlington-Verstärker mit hoher Abschaltgeschwindigkeit bekannt, bei dem in einem vorgegebenen Zeitintervall nach dem Umschalten des Steuersignals Minoritätsträger in der Basisregion eines als Leistungsschalter verwendeten Bipolartransistors abgeführt werden. Auch wird zur Beschleunigung des Abschaltvorgangs die Gate-Source-Kapazität eines den Eingang des Hybrid-Darlington-Verstärkers bildenden FET mittels eines bipolaren Transistors kurzgeschlossen. Die Steuerelektroden des FET und des bipolaren Transistors sind dabei miteinander verbunden.According to WO 89/06070, it is also a hybrid Darlington amplifier with high Shutdown speed is known, at which in a predetermined time interval switching the control signal minority carrier in the base region as an Circuit breaker used bipolar transistor are dissipated. Also becomes Accelerating the shutdown of the gate-source capacitance of the input of the hybrid Darlington amplifier-forming FET by means of a bipolar transistor short-circuited. The control electrodes of the FET and the bipolar transistor are connected to each other.

Der Erfindung liegt die Aufgabe zugrunde, ohne zusätzlichen Schaltungsaufwand den Leistungsschalter in kürzester Zeit ab­ schalten zu können. Diese Aufgabe wird durch die im Patentan­ spruch angegebene Schaltungsanordnung gelöst.The invention has for its object without additional Circuit breaker from the circuit breaker in the shortest possible time to be able to switch. This task is accomplished by the in Patentan said circuit arrangement solved.

Nachstehend wird die Erfindung an einem Ausführungsbeispiel mit Hilfe der Zeichnung erläutert.The invention is based on an exemplary embodiment Help explained in the drawing.

Ein Leistungsschalter 1 in Form eines Feldeffekttransistors soll eine Last 2 ohne Zeitverzögerung mit Hilfe eines Ansteuer­ signals 3 durch- und abschaltbar sein. Dazu wird das Ansteuersi­ gnal 3 über einen Emitterfolger 4 an die Steuerelektrode 5 des Leistungsschalters 1 gelegt. Zur Begrenzung des Gate-Stroms ist ein Begrenzungswiderstand 6 vorgesehen, der den Emitterfolger 4 schützt. Ein zum Ansteuersignal 3 mit Hilfe einer Inverterstufe 7 invertiertes Signal 3' wird gleichzeitig der Steuerelektrode 8 eines weiteren Feldeffekttransistors 9 gelegt, der dann durch­ geschaltet wird, wenn der Leistungsschalter FET1 abgeschaltet werden soll. Dieser zusätzliche Feldeffekttransistor 9 bedeutet einen niederohmigen Kurzschluß für die aufgeladene Eingangskapa­ zität 10 des Leistungsschalters 1. Die nach dem Patentanspruch angegebene Maßnahme besitzt den Vorteil, daß durch den Einsatz eines Feldeffekttransistors als Kurzschlußschalter die Nachtei­ le, die bei einem bis in die Sättigung betriebenen bipolaren Transistor vorhandenen sind, entfallen. Der Entladestrom kann auch hier zum Schutz des Schalters 9 durch einen Widerstand 11 begrenzt werden.A circuit breaker 1 in the form of a field effect transistor should be able to switch a load 2 on and off without a time delay with the aid of a control signal 3 . For this purpose, the Ansteuersi signal 3 is placed on the control electrode 5 of the circuit breaker 1 via an emitter follower 4 . A limiting resistor 6 , which protects the emitter follower 4 , is provided to limit the gate current. A signal 3 'inverted to the control signal 3 with the aid of an inverter stage 7 is simultaneously applied to the control electrode 8 of a further field effect transistor 9 , which is then switched on when the power switch FET1 is to be switched off. This additional field effect transistor 9 means a low-resistance short circuit for the charged input capacitance 10 of the circuit breaker 1st The measure specified according to the patent claim has the advantage that the use of a field effect transistor as a short-circuit switch avoids the disadvantages that are present in a bipolar transistor operated up to saturation. The discharge current can also be limited here by a resistor 11 to protect the switch 9 .

Claims (4)

1. Schaltungsanordnung, die mit einem Ansteuersignal (3) angesteuert wird, wobei ein elektronischer Leistungsschalter (1) zum Schalten einer Last vorgesehen ist, der ein sourceseitig mit Bezugspotential und drainseitig mit Last verbundener Feldeffekttransistor ist, dessen Steuerelektrode (5) mit einem Emitterfolger (4) und einem zweiten, sourceseitig an Bezugspotential angeschlossenen Feldeffekttransistor (9) verbunden ist, und wobei dem Emitterfolger (4) das Ansteuersignal (3) und der Steuerelektrode (8) des zweiten Feldeffekttransistors (9) ein invertiertes Ansteuersignal (3') mittels einer Inverterstufe (7) zugeführt ist.1. Circuit arrangement which is driven by a control signal ( 3 ), an electronic power switch ( 1 ) being provided for switching a load, which is a field effect transistor connected on the source side with reference potential and on the drain side connected to load, the control electrode ( 5 ) of which has an emitter follower ( 4 ) and a second field-effect transistor ( 9 ) connected on the source side to reference potential, and wherein the emitter follower ( 4 ) the control signal ( 3 ) and the control electrode ( 8 ) of the second field-effect transistor ( 9 ) an inverted control signal ( 3 ') by means of a Inverter stage ( 7 ) is supplied. 2. Schaltungsanordnung nach Anspruch 1, dadurch gekennzeichnet, daß zwischen dem Emitter des Emitterfolgers (4) und der Steuerelektrode (5) des Leistungsschalters (1) ein Strombegrenzungswiderstand (6) geschaltet ist.2. Circuit arrangement according to claim 1, characterized in that a current limiting resistor ( 6 ) is connected between the emitter of the emitter follower ( 4 ) and the control electrode ( 5 ) of the circuit breaker ( 1 ). 3. Schaltungsanordnung nach Anspruch 1, dadurch gekennzeichnet, daß zwischen der Steuerelektrode (5) des Leistungsschalters (1) und dem zweiten Feldeffekttransistor (9) ein zweiter Strombegrenzungswiderstand (11) geschaltet ist.3. Circuit arrangement according to claim 1, characterized in that between the control electrode ( 5 ) of the circuit breaker ( 1 ) and the second field effect transistor ( 9 ), a second current limiting resistor ( 11 ) is connected. 4. Schaltungsanordnung nach Anspruch 1, dadurch gekennzeichnet, daß der Emitterfolger (4) ein bipolarer Transistor ist.4. Circuit arrangement according to claim 1, characterized in that the emitter follower ( 4 ) is a bipolar transistor.
DE19893928195 1989-08-25 1989-08-25 Circuit arrangement for quickly opening a circuit breaker Expired - Lifetime DE3928195C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19893928195 DE3928195C2 (en) 1989-08-25 1989-08-25 Circuit arrangement for quickly opening a circuit breaker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19893928195 DE3928195C2 (en) 1989-08-25 1989-08-25 Circuit arrangement for quickly opening a circuit breaker

Publications (2)

Publication Number Publication Date
DE3928195A1 DE3928195A1 (en) 1991-02-28
DE3928195C2 true DE3928195C2 (en) 2001-10-25

Family

ID=6387910

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19893928195 Expired - Lifetime DE3928195C2 (en) 1989-08-25 1989-08-25 Circuit arrangement for quickly opening a circuit breaker

Country Status (1)

Country Link
DE (1) DE3928195C2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0555648A3 (en) * 1992-01-16 1994-09-28 Kopp Heinrich Ag Circuit for controlling field-controlled power switches
FR2702608B1 (en) * 1993-03-09 1997-05-30 Motorola Semiconducteurs Switching transistor circuit assembly.
US5467047A (en) * 1994-07-15 1995-11-14 Motorola, Inc. Power transistor rapid turn off circuit for saving power

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0239861A1 (en) * 1986-03-19 1987-10-07 Siemens Aktiengesellschaft MOSFET switch with an inductive load
WO1989006070A1 (en) * 1987-12-21 1989-06-29 Sundstrand Corporation Darlington amplifier with high speed turnoff

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0239861A1 (en) * 1986-03-19 1987-10-07 Siemens Aktiengesellschaft MOSFET switch with an inductive load
WO1989006070A1 (en) * 1987-12-21 1989-06-29 Sundstrand Corporation Darlington amplifier with high speed turnoff

Also Published As

Publication number Publication date
DE3928195A1 (en) 1991-02-28

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8120 Willingness to grant licenses paragraph 23
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: THOMSON LICENSING, BOULOGNE-BILLANCOURT, FR

8328 Change in the person/name/address of the agent

Representative=s name: ROSSMANITH, M., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW.

8310 Action for declaration of annulment
R020 Patent grant now final
R040 Withdrawal/refusal of revocation action now final
R040 Withdrawal/refusal of revocation action now final

Effective date: 20140715