DE3917765C2 - Method for connecting two disk-shaped bodies made of materials with different coefficients of thermal expansion and its use - Google Patents
Method for connecting two disk-shaped bodies made of materials with different coefficients of thermal expansion and its useInfo
- Publication number
- DE3917765C2 DE3917765C2 DE3917765A DE3917765A DE3917765C2 DE 3917765 C2 DE3917765 C2 DE 3917765C2 DE 3917765 A DE3917765 A DE 3917765A DE 3917765 A DE3917765 A DE 3917765A DE 3917765 C2 DE3917765 C2 DE 3917765C2
- Authority
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- Germany
- Prior art keywords
- disc
- shaped
- thermal expansion
- shaped bodies
- disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 20
- 239000000463 material Substances 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000011888 foil Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000005245 sintering Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- RRLHMJHRFMHVNM-BQVXCWBNSA-N [(2s,3r,6r)-6-[5-[5-hydroxy-3-(4-hydroxyphenyl)-4-oxochromen-7-yl]oxypentoxy]-2-methyl-3,6-dihydro-2h-pyran-3-yl] acetate Chemical compound C1=C[C@@H](OC(C)=O)[C@H](C)O[C@H]1OCCCCCOC1=CC(O)=C2C(=O)C(C=3C=CC(O)=CC=3)=COC2=C1 RRLHMJHRFMHVNM-BQVXCWBNSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/8382—Diffusion bonding
- H01L2224/8383—Solid-solid interdiffusion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Description
Die Erfindung bezieht sich auf ein Verfahren zum Verbinden von zwei scheibenförmigen Körpern aus Materialien unterschiedli cher thermischer Ausdehnungskoeffizienten nach dem Oberbegriff des Patentanspruchs 1 und dessen Verwendung.The invention relates to a method for connecting two disc-shaped bodies made of different materials cher thermal expansion coefficient according to the preamble of claim 1 and its use.
Ein Verfahren dieser Art, das zum Befestigen von Halbleiter bauelementen auf metallischen Substraten dient und als Diffu sionsschweißverfahren bezeichnet wird, ist in der DE 33 25 355 A1 beschrieben. Ein anderes Verfahren dieser Art, das unter der Bezeichnung "Drucksinterverfahren" bekannt ge worden ist, ist dem US-A-4 810 672 zu entnehmen. Es kann bei spielsweise dazu verwendet werden, um elektronische Bauelemen te, insbesondere großflächige Leistungshalbleiter, mit metal lischen Substraten zu verbinden. Darüberhinaus werden Ver fahren nach dem Oberbegriff des Patentanspruchs 1 ganz all gemein dazu verwendet, um zwei scheibenförmige Körper aus Materialien unterschiedlicher thermischer Ausdehnungskoeffi zienten, z. B. aus zwei unterschiedlichen metallischen Werk stoffen, miteinander zu verbinden. Solche Verfahren führen zwar zu sehr dauerhaften Verbindungen, weisen jedoch generell den Nachteil auf, daß die bei der erforderlichen Verbindungs temperatur miteinander verbundenen scheibenförmigen Körper beim Abkühlen infolge der unterschiedlichen Wärmeausdehnungs koeffizienten in einen Spannungszustand geraten, der zu Ver wölbungen führt. Dieser Nachteil tritt um so stärker hervor, je mehr sich die Wärmeausdehnungskoeffizienten voneinander unterscheiden und je größer der Unterschied zwischen der Ver bindungstemperatur und der Betriebstemperatur des zusammenge fügten Körpers ist. Besonders störend sind die Verwölbungen dann, wenn einer der scheibenförmigen Körper aus einer Halb leiterscheibe besteht, die mit oberflächenseitig integrierten MOS-Strukturen versehen ist und mit entsprechenden Metallisie rungsstrukturen versehen werden soll. So ist z. B. eine Her stellung der Strukturen durch Anwendung von photolithographi schen Schritten und Ätztechniken mit Genauigkeiten im Bereich von µm nicht mehr möglich.A method of this type, that for fastening semiconductors components on metallic substrates and serves as a diffuser Sionsschweißverfahren is called in the DE 33 25 355 A1 described. Another process of this kind, known as "pressure sintering" can be found in US-A-4,810,672. It can at used for example to build electronic components te, especially large-area power semiconductors, with metal connecting substrates. In addition, Ver drive all according to the preamble of claim 1 commonly used to make two disc-shaped bodies Materials with different coefficients of thermal expansion clients, e.g. B. from two different metallic works fabrics to connect with each other. Such procedures result to very permanent connections, but generally point the disadvantage that the required connection disc-shaped bodies connected to one another at temperature when cooling due to the different thermal expansion coefficients get into a voltage state, which leads to Ver arches leads. This disadvantage is all the more apparent the more the thermal expansion coefficients differ from each other differ and the greater the difference between ver binding temperature and the operating temperature of the merged added body is. The warping is particularly disturbing then when one of the disc-shaped bodies from a half there is a conductor disc that is integrated with the surface MOS structures is provided and with appropriate Metallisie structures should be provided. So z. B. a Her positioning of the structures by using photolithography steps and etching techniques with accuracy in the area of µm is no longer possible.
Aus der DE 33 27 476 C2, insbesondere Ansprüche 1, 4, Spalte 5, Zeilen 3 bis 24 und Fig. 5, ist ein Verfahren zum Verbinden zweier scheibenförmiger Körper unterschiedlicher Metallwerkstoffe zu einem Kochgeschirr beschrieben, wobei ebenfalls durch beheizte Preßstempel, als Pfannenhalter 30, 32 benannt, von denen einer konkav, der andere konvex ausgebil det ist, beide Werkstoffscheiben durch Preßschweißen mitein ander fest verbunden werden.From DE 33 27 476 C2, in particular claims 1, 4, column 5, lines 3 to 24 and Fig. 5 is a method for Connecting two disc-shaped bodies different Metal materials described in a cookware, wherein also by heated press rams, as pan holders 30, 32 named, one of which is concave, the other convex det, both material discs by pressure welding together be firmly connected.
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren der eingangs genannten Art anzugeben, bei dem dieser Nachteil nicht auftritt. Das wird erfindungsgemäß durch eine Ausbil dung nach dem kennzeichnenden Teil des Patentanspruchs 1 er reicht.The invention has for its object a method of Specify the type mentioned, in which this disadvantage does not occur. According to the invention, this is achieved through training dung according to the characterizing part of claim 1 enough.
Der mit der Erfindung erzielbare Vorteil liegt insbesondere darin, daß die bei der Verbindungstemperatur eingestellte, durch die Form der Pressenstempel und der Druckstücke vorge gebene Krümmung der miteinander zu verbindenden scheibenför migen Körper so gewählt werden kann, daß gerade bei einer be stimmten, unter der Verbindungstemperatur liegenden Betriebs temperatur der spannungsfreie und damit ebene Zustand des aus beiden scheibenförmigen Körpern zusammengesetzten Körpers erreicht wird.The advantage that can be achieved with the invention is in particular in that the set at the connection temperature featured by the shape of the press ram and the pressure pieces given curvature of the disc to be connected body can be chosen so that just one be agreed, operating below the connection temperature temperature the tension-free and thus flat state of the two disc-shaped bodies composite body is achieved.
Die Ansprüche 2 bis 4 stellen vorteilhafte Ausgestaltungen und Weiterbildungen des Verfahrens nach der Erfindung dar. Der An spruch 5 ist auf eine bevorzugte Anwendung des erfindungsge mäßen Verfahrens gerichtet.Claims 2 to 4 represent advantageous refinements and Developments of the method according to the invention. The An saying 5 is on a preferred application of the fiction directed procedure.
Die Erfindung wird nachfolgend anhand einer in der Zeichnung dargestellten, zur Durchführung des erfindungsgemäßen Ver fahrens geeigneten Anordnung näher erläutert. Dabei zeigt:The invention is described below with reference to a drawing shown, for carrying out the Ver driving suitable arrangement explained in more detail. It shows:
Fig. 1 eine Anordnung zum Verbinden zweier scheibenförmiger Körper mit unterschiedlichen thermischen Ausdehnungs koeffizienten und Fig. 1 shows an arrangement for connecting two disc-shaped body with different thermal expansion coefficients and
Fig. 2 eine Weiterbildung der Anordnung nach Fig. 1 zum gleichzeitigen Verbinden einer Mehrzahl von scheiben förmigen Körpern. Fig. 2 is a development of the arrangement of FIG. 1 for the simultaneous connection of a plurality of disc-shaped bodies.
In Fig. 1 sind zwei scheibenförmige Körper 1 und 2 mittels eines Diffusionsschweißverfahrens miteinander zu verbinden, wobei 1 eine Scheibe aus dotiertem Halbleitermaterial, z. B. Silizium, und 2 ein metallisches Substrat, z. B. aus Molybdän oder Wolfram darstellen. Zweckmäßigerweise wird eine Folie 3 oder ein dünnes Blech aus einem plastisch deformierbaren Material, z. B. Al, Ag oder Au, mit einer Foliendicke von z. B. 10 bis 30 µm zwischen die miteinander zu verbindenden Flächen eingelegt. Ist die Folie 3 aus Edelmetall gefertigt, so muß diejenige der beiden miteinander zu verbindenden Flächen, die aus Halbleitermaterial besteht, mit einem als Diffusionssperre wirkenden Überzug, z. B. aus Titan, versehen sein, wobei dieser Überzug mit einer weiteren Schicht abge deckt wird, die z. B. aus Au besteht. Nach dem Zusammenle gen der Teile 1 bis 3, wobei die Unterseite des Halbleiter körpers 1 vorzugsweise noch mit einer Metallscheibe 4 aus Al, abgedeckt wird, um sie vor etwaigen Beschädigungen zu schützen oder um eine Metallisierung der Unterseite der Halbleiter scheibe 2 zu erzielen, werden die in dieser Weise gestapelten Teile 1 bis 4 zwischen zwei Pressenstempel 5 und 6 in eine im einzelnen nicht dargestellte, vorzugsweise hydraulische Presse eingebracht. Die Pressenstempel werden beheizt, so daß die Anordnung 1 bis 4 auf eine Verbindungstemperatur gebracht wird, die etwa im Bereich von 230-570°C liegt. Die Pressen stempel 5 und 6 werden durch Betätigung der Presse so gegen einander bewegt, daß die Teile 1 und 2 mit einem Anpreßdruck von etwa 5000-25000 N/cm² während einiger Minuten zusammen gepreßt werden. Hierdurch wird eine Verbindung der Halblei terscheibe 1 und des Substrats 2 erreicht, die einen sehr geringen elektrischen und thermischen Übergangswiderstand, einen sehr hohen Homogenitätsgrad und eine große Haftfestig keit aufweist.In Fig. 1, two disk-shaped bodies 1 and 2 are to be connected to one another by means of a diffusion welding process, with 1 being a disk made of doped semiconductor material, e.g. B. silicon, and 2 a metallic substrate, e.g. B. from molybdenum or tungsten. Advantageously, a film 3 or a thin sheet made of a plastically deformable material, for. B. Al, Ag or Au, with a film thickness of z. B. 10 to 30 microns between the surfaces to be joined. If the film 3 is made of precious metal, then that of the two surfaces to be joined, which consists of semiconductor material, must be coated with a coating acting as a diffusion barrier, e.g. B. made of titanium, this coating being covered with a further layer which z. B. consists of Au. After assembling parts 1 to 3 , wherein the underside of the semiconductor body 1 is preferably still covered with a metal disk 4 made of Al, in order to protect it from any damage or to achieve a metallization of the underside of the semiconductor wafer 2 the parts 1 to 4 stacked in this way are introduced between two press rams 5 and 6 into a preferably hydraulic press, not shown in detail. The press rams are heated so that the arrangement 1 to 4 is brought to a connection temperature which is approximately in the range of 230-570 ° C. The press stamps 5 and 6 are moved against each other by actuating the press so that parts 1 and 2 are pressed together with a contact pressure of about 5000-25000 N / cm² for a few minutes. As a result, a connection of the semiconductor plate 1 and the substrate 2 is achieved, which has a very low electrical and thermal contact resistance, a very high degree of homogeneity and a large adhesive strength.
Da das metallische Substrat 2 einen größeren thermischen Aus dehnungskoeffizienten hat als die Halbleiterscheibe 1, sind beide Pressenstempel 5 und 6 an ihren den Anpreßdruck auf die Teile 1 und 2 übertragenden Flächen kugelkalottenförmig aus gebildet, wobei die untere Fläche 7 des Stempels 5 konkav ist, weil sie sich auf der Seite des Substrats 2 mit dem größeren thermischen Ausdehnungskoeffizienten befindet, während die obere Fläche 8 des Stempels 6 konvex ist, weil sie sich auf der Seite der Halbleiterscheibe 1 mit dem kleineren thermi schen Ausdehnungskoeffizienten befindet. Die Krümmungsradien der Flächen 7 und 8 sind gleich groß, so daß die Teile 1 und 2 während des Diffusionsschweißens, d. h. bei der Verbindungs temperatur, eine entsprechende Krümmung aufweisen. Nach dem Schweißvorgang, d. h. nach dem Entfernen der miteinander ver bundenen Teile 1 und 2 aus der Presse, führen die unterschied lichen thermischen Ausdehnungskoeffizienten von 1 und 2 dazu, daß sich die Krümmung des aus 1 und 2 bestehenden, scheiben förmigen Körpers durch die Abkühlung verringert. Gibt man nun eine bestimmte Betriebstemperatur vor, bei der der aus 1 und 2 bestehende, scheibenförmige Körper spannungsfrei bzw. eben sein soll, so wird in einfacher Weise der Krümmungsradius der Flächen 7 und 8 so gewählt, daß durch die Abkühlung von der Verbindungstemperatur auf die Betriebstemperatur die zunächst durch die Flächen 7 und 8 bestimmte Krümmung der miteinander verbundenen Teile 1 und 2 praktisch vollständig aufgehoben wird.Since the metallic substrate 2 has a greater thermal expansion coefficient than the semiconductor wafer 1 , both press rams 5 and 6 are formed on their surfaces, which transmit the contact pressure to the parts 1 and 2 , in the form of a spherical cap, the lower surface 7 of the ram 5 being concave because it is on the side of the substrate 2 with the larger coefficient of thermal expansion, while the upper surface 8 of the stamp 6 is convex because it is on the side of the semiconductor wafer 1 with the smaller coefficient of thermal expansion. The radii of curvature of the surfaces 7 and 8 are the same size, so that the parts 1 and 2 during the diffusion welding, ie at the connection temperature, have a corresponding curvature. After the welding process, ie after removing the connected parts 1 and 2 from the press, the different coefficients of thermal expansion of 1 and 2 lead to the fact that the curvature of the disc-shaped body consisting of 1 and 2 is reduced by the cooling . If you now specify a certain operating temperature at which the disc-shaped body consisting of 1 and 2 should be stress-free or flat, the radius of curvature of the surfaces 7 and 8 is selected in a simple manner so that the cooling from the connection temperature to the Operating temperature, the curvature of the interconnected parts 1 and 2, which is initially determined by the surfaces 7 and 8 , is virtually completely eliminated.
Soll z. B. ein Drucksinterverfahren benutzt werden, um die Teile 1 und 2 miteinander zu verbinden, so wird die Metall folie 3 durch eine Zwischenschicht, insbesondere in Form einer Paste, ersetzt, die mit einer Schichtdicke von etwa 10 bis 20 µm beispielsweise auf der Unterseite des Substrats 2 aufge tragen werden kann. Die Paste besteht mit Vorteil aus einem Silberpulver aus plättchenförmigen Pulverpartikeln, die in einem Lösungsmittel suspendiert werden. Nach dem Trocknen der aufgetragenen Paste werden dann die Teile 1, 2 und 4 in der dargestellten Weise zusammengesetzt, zwischen die Pressen stempel 5 und 6 eingebracht und auf eine Sintertemperatur von etwa 230°C erhitzt. Der für die Sinterung erforderliche Druck von mindestens 900 N/cm² wird durch die Pressenstempel 5, 6 aufgebracht. Should z. B. a pressure sintering process to connect the parts 1 and 2 together, the metal foil 3 is replaced by an intermediate layer, in particular in the form of a paste, with a layer thickness of about 10 to 20 microns, for example on the underside of Substrate 2 can be carried up. The paste advantageously consists of a silver powder made of platelet-shaped powder particles which are suspended in a solvent. After the applied paste has dried, the parts 1 , 2 and 4 are then assembled in the manner shown, stamps 5 and 6 are inserted between the presses and heated to a sintering temperature of approximately 230.degree. The pressure of at least 900 N / cm² required for the sintering is applied by the press rams 5 , 6 .
Fig. 2 zeigt eine Anordnung, die sich aus Fig. 1 dadurch ergibt, daß zwischen den Pressestempeln 5 und 6 noch weitere kugelkalottenförmige Druckstücke 9 und 10 vorgesehen sind, deren Oberseiten jeweils konvex und deren Unterseiten jeweils konkav ausgebildet sind, wobei jede dieser Flächen den glei chen Krümmungsradius aufweist wie die Flächen 7 und 8. Bringt man zwischen den Stempel 5 und das Druckstück 9 die bereits beschriebenen Teile 1 bis 4 ein, zwischen die Druckstücke 9 und 10 entsprechende Teile 1′ bis 4′ und zwischen das Druck stück 10 und den Stempel 6 weitere entsprechende Teile 1′′ bis 4′′, so gelingt es, alle diese Teile in einem einzigen Ar beitsgang jeweils miteinander zu verbinden. Fig. 2 shows an arrangement which results from Fig. 1 in that between the press punches 5 and 6 still further spherical-shaped pressure pieces 9 and 10 are provided, the tops of which are each convex and the undersides of which are concave, each of these surfaces has the same radius of curvature as surfaces 7 and 8 . If one brings between the stamp 5 and the pressure piece 9 the parts 1 to 4 already described, between the pressure pieces 9 and 10 corresponding parts 1 'to 4 ' and between the pressure piece 10 and the stamp 6 further corresponding parts 1 '' to 4 '', So it succeeds to connect each other in a single Ar beitsgang.
In Abweichung von den oben beschriebenen Verbindungsverfahren sind ganz allgemein auch andere Verbindungsverfahren im Rahmen der Erfindung anwendbar, bei denen zwei scheibenförmige Körper bei einer vorgegebenen Verbindungstemperatur und einem vor gegebenen Anpreßdruck zusammengefügt werden. Dabei können die miteinander zu verbindenden, scheibenförmigen Körper aus be liebigen Materialien bestehen, deren thermische Ausdehnungs koeffizienten voneinander abweichen. Beispielsweise können die Teile 1 und 2 auch zwei Metailscheiben aus unterschiedlichem Material darstellen.In deviation from the connection methods described above, other connection methods can also be used in general within the scope of the invention, in which two disk-shaped bodies are joined together at a predetermined connection temperature and a given contact pressure. The disc-shaped bodies to be connected to one another can be made of any material whose thermal expansion coefficients differ from one another. For example, parts 1 and 2 can also represent two metal disks made of different materials.
Claims (5)
Priority Applications (1)
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DE3917765A DE3917765C2 (en) | 1989-05-31 | 1989-05-31 | Method for connecting two disk-shaped bodies made of materials with different coefficients of thermal expansion and its use |
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DE3917765A DE3917765C2 (en) | 1989-05-31 | 1989-05-31 | Method for connecting two disk-shaped bodies made of materials with different coefficients of thermal expansion and its use |
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DE3917765A1 DE3917765A1 (en) | 1990-12-06 |
DE3917765C2 true DE3917765C2 (en) | 1996-05-30 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10140826B4 (en) * | 2000-12-13 | 2005-11-10 | Infineon Technologies Ag | Processing a thin semiconductor wafer comprises heat treating the rear side of the wafer, applying a metal-based bonding covering layer, contacting the rear side substrate with wafer forming conducting side, etc. |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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DE3940933C2 (en) * | 1989-12-12 | 1996-08-01 | Eupec Gmbh & Co Kg | Method for deforming a base plate for semiconductor modules and device for carrying out the method |
DE4233073A1 (en) * | 1992-10-01 | 1994-04-07 | Siemens Ag | Semiconductor modular structure prodn. - by convexly shaping and bonding in single hot pressing operation |
DE4338107C1 (en) * | 1993-11-08 | 1995-03-09 | Eupec Gmbh & Co Kg | Semiconductor module |
DE4436561C1 (en) * | 1994-10-13 | 1996-03-14 | Deutsche Spezialglas Ag | Changing curvature of anodically bonded flat composite bodies, e.g. glass and metal |
DE19820393A1 (en) * | 1998-05-07 | 1999-11-11 | Volkswagen Ag | Arrangement for connecting a light metal component to a steel component and method for producing the arrangement |
DE10126508B4 (en) * | 2001-05-30 | 2008-11-13 | Infineon Technologies Ag | Device with electronic components packaged by means of injection molding technology, injection molding tool and method for packaging electronic components |
DE102022134916B4 (en) | 2022-12-28 | 2024-10-10 | Infineon Technologies Ag | Housing with low-distortion carrier |
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GR79598B (en) * | 1982-07-30 | 1984-10-31 | Farberware Inc | |
IN168174B (en) * | 1986-04-22 | 1991-02-16 | Siemens Ag |
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1989
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Cited By (1)
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DE10140826B4 (en) * | 2000-12-13 | 2005-11-10 | Infineon Technologies Ag | Processing a thin semiconductor wafer comprises heat treating the rear side of the wafer, applying a metal-based bonding covering layer, contacting the rear side substrate with wafer forming conducting side, etc. |
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