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DE3878339D1 - Detektor fuer ionisierende teilchen. - Google Patents

Detektor fuer ionisierende teilchen.

Info

Publication number
DE3878339D1
DE3878339D1 DE8888810448T DE3878339T DE3878339D1 DE 3878339 D1 DE3878339 D1 DE 3878339D1 DE 8888810448 T DE8888810448 T DE 8888810448T DE 3878339 T DE3878339 T DE 3878339T DE 3878339 D1 DE3878339 D1 DE 3878339D1
Authority
DE
Germany
Prior art keywords
particle detector
ionizing particle
ionizing
detector
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888810448T
Other languages
English (en)
Other versions
DE3878339T2 (de
Inventor
Raymond Guye
Raymond Vuilleumier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Safran Colibrys SA
Original Assignee
Centre Suisse dElectronique et Microtechnique SA CSEM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Suisse dElectronique et Microtechnique SA CSEM filed Critical Centre Suisse dElectronique et Microtechnique SA CSEM
Application granted granted Critical
Publication of DE3878339D1 publication Critical patent/DE3878339D1/de
Publication of DE3878339T2 publication Critical patent/DE3878339T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
DE8888810448T 1987-07-17 1988-06-30 Detektor fuer ionisierende teilchen. Expired - Fee Related DE3878339T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8710118A FR2618258B1 (fr) 1987-07-17 1987-07-17 Detecteur de particules ionisantes.

Publications (2)

Publication Number Publication Date
DE3878339D1 true DE3878339D1 (de) 1993-03-25
DE3878339T2 DE3878339T2 (de) 1993-08-26

Family

ID=9353250

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888810448T Expired - Fee Related DE3878339T2 (de) 1987-07-17 1988-06-30 Detektor fuer ionisierende teilchen.

Country Status (4)

Country Link
EP (1) EP0302820B1 (de)
JP (1) JP2608311B2 (de)
DE (1) DE3878339T2 (de)
FR (1) FR2618258B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211897A (ja) * 1984-04-05 1985-10-24 日本電気株式会社 多層配線基板
GB9213719D0 (en) * 1992-06-27 1992-08-12 Atomic Energy Authority Uk Pin diode
JPH07235741A (ja) * 1993-12-27 1995-09-05 Ngk Spark Plug Co Ltd 多層配線基板
DE69523285D1 (de) * 1995-02-27 2001-11-22 Cons Ric Microelettronica Halbleiterteilchendetektor und Verfahren zu seiner Herstellung
EP1061587B1 (de) * 1999-06-15 2007-03-28 STMicroelectronics S.r.l. Monolithischer Halbleiterteilchendetektor und Verfahren zu seiner Herstellung
US20040253315A1 (en) * 2001-07-13 2004-12-16 Yasuaki Ogawa Lyophilizing composition of drug-encapsulating polymer micelle and method for preparation thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4837607A (en) * 1984-04-25 1989-06-06 Josef Kemmer Large-area, low capacitance semiconductor arrangement

Also Published As

Publication number Publication date
FR2618258A1 (fr) 1989-01-20
EP0302820B1 (de) 1993-02-10
FR2618258B1 (fr) 1990-01-05
DE3878339T2 (de) 1993-08-26
JPS6437879A (en) 1989-02-08
EP0302820A1 (de) 1989-02-08
JP2608311B2 (ja) 1997-05-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: COLIBRYS S.A., NEUCHATEL, CH

8339 Ceased/non-payment of the annual fee