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DE3876384D1 - Vorrichtung zum messen des durchmessers eines kristalles. - Google Patents

Vorrichtung zum messen des durchmessers eines kristalles.

Info

Publication number
DE3876384D1
DE3876384D1 DE8888710031T DE3876384T DE3876384D1 DE 3876384 D1 DE3876384 D1 DE 3876384D1 DE 8888710031 T DE8888710031 T DE 8888710031T DE 3876384 T DE3876384 T DE 3876384T DE 3876384 D1 DE3876384 D1 DE 3876384D1
Authority
DE
Germany
Prior art keywords
crystal
measuring
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888710031T
Other languages
English (en)
Other versions
DE3876384T2 (de
Inventor
Tomohiro Kakegawa
Yoshihiro Hirano
Nobuo Katsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE3876384D1 publication Critical patent/DE3876384D1/de
Publication of DE3876384T2 publication Critical patent/DE3876384T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/08—Measuring arrangements characterised by the use of optical techniques for measuring diameters

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Length Measuring Devices By Optical Means (AREA)
DE8888710031T 1987-09-25 1988-09-26 Vorrichtung zum messen des durchmessers eines kristalles. Expired - Fee Related DE3876384T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62240361A JPS6483595A (en) 1987-09-25 1987-09-25 Device for measuring crystal diameter

Publications (2)

Publication Number Publication Date
DE3876384D1 true DE3876384D1 (de) 1993-01-14
DE3876384T2 DE3876384T2 (de) 1993-04-29

Family

ID=17058347

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888710031T Expired - Fee Related DE3876384T2 (de) 1987-09-25 1988-09-26 Vorrichtung zum messen des durchmessers eines kristalles.

Country Status (4)

Country Link
US (1) US4926357A (de)
EP (1) EP0315572B1 (de)
JP (1) JPS6483595A (de)
DE (1) DE3876384T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2601930B2 (ja) * 1990-03-29 1997-04-23 信越半導体株式会社 単結晶ネツク部直径制御方法及び装置
JPH0726817B2 (ja) * 1990-07-28 1995-03-29 信越半導体株式会社 結晶径測定装置
JPH0777996B2 (ja) * 1990-10-12 1995-08-23 信越半導体株式会社 コーン部育成制御方法及び装置
JPH0785489B2 (ja) * 1991-02-08 1995-09-13 信越半導体株式会社 単結晶の直径計測方法
JPH0717475B2 (ja) * 1991-02-14 1995-03-01 信越半導体株式会社 単結晶ネック部育成自動制御方法
EP0911430B1 (de) * 1991-04-26 2003-04-09 Mitsubishi Materials Corporation Verfahren zur Einkristallzüchtung
JP2785532B2 (ja) * 1991-08-24 1998-08-13 信越半導体株式会社 単結晶棒引上育成制御装置
US5286461A (en) * 1991-09-20 1994-02-15 Ferrofluidics Corporation Method and apparatus for melt level detection in czochralski crystal growth systems
US5653799A (en) * 1995-06-02 1997-08-05 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US5656078A (en) * 1995-11-14 1997-08-12 Memc Electronic Materials, Inc. Non-distorting video camera for use with a system for controlling growth of a silicon crystal
US5746828A (en) * 1996-01-16 1998-05-05 General Signal Corporation Temperature control system for growing high-purity monocrystals
US6226032B1 (en) 1996-07-16 2001-05-01 General Signal Corporation Crystal diameter control system
US5846318A (en) * 1997-07-17 1998-12-08 Memc Electric Materials, Inc. Method and system for controlling growth of a silicon crystal
US5922127A (en) * 1997-09-30 1999-07-13 Memc Electronic Materials, Inc. Heat shield for crystal puller
US5882402A (en) * 1997-09-30 1999-03-16 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US6106612A (en) * 1998-06-04 2000-08-22 Seh America Inc. Level detector and method for detecting a surface level of a material in a container
US6171391B1 (en) * 1998-10-14 2001-01-09 Memc Electronic Materials, Inc. Method and system for controlling growth of a silicon crystal
US6111262A (en) * 1998-10-30 2000-08-29 Sumitomo Metal Industries, Ltd. Method for measuring a diameter of a crystal
JP4209082B2 (ja) 2000-06-20 2009-01-14 コバレントマテリアル株式会社 単結晶引上げ装置および引上げ方法
DE10120730B4 (de) * 2001-04-27 2006-08-24 Schott Ag Verfahren und Vorrichtung zur Messung der Phasengrenze
US7573587B1 (en) * 2008-08-25 2009-08-11 Memc Electronic Materials, Inc. Method and device for continuously measuring silicon island elevation
WO2015047816A1 (en) * 2013-09-30 2015-04-02 Gt Crystal Systems, Llc Method of automatically measuring seed melt back of crystalline material
AT524604B1 (de) 2020-12-29 2025-01-15 Fametec Gmbh Verfahren zur Mitverfolgung des Kristallwachstums eines Einkristalls

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4350557A (en) * 1974-06-14 1982-09-21 Ferrofluidics Corporation Method for circumferential dimension measuring and control in crystal rod pulling
DD132235A1 (de) * 1977-01-26 1978-09-13 Helge Fomm Verfahren und anordnung zur kristalldurchmesserkonstanthaltung bei der kristallzuechtung
US4242589A (en) * 1979-01-15 1980-12-30 Mobil Tyco Solar Energy Corporation Apparatus for monitoring crystal growth
DE2923240A1 (de) * 1979-06-08 1980-12-18 Leybold Heraeus Gmbh & Co Kg Messverfahren und messanordnung fuer den durchmesser von einkristallen beim tiegelziehen
JPS5618422A (en) * 1979-07-23 1981-02-21 Hitachi Ltd Measuring method for diameter of electron beam
US4565598A (en) * 1982-01-04 1986-01-21 The Commonwealth Of Australia Method and apparatus for controlling diameter in Czochralski crystal growth by measuring crystal weight and crystal-melt interface temperature
US4710258A (en) * 1984-11-30 1987-12-01 General Signal Corporation System for controlling the diameter of a crystal in a crystal growing furnace
JPH0649631B2 (ja) * 1986-10-29 1994-06-29 信越半導体株式会社 結晶径測定装置

Also Published As

Publication number Publication date
EP0315572B1 (de) 1992-12-02
DE3876384T2 (de) 1993-04-29
JPH0559877B2 (de) 1993-09-01
US4926357A (en) 1990-05-15
EP0315572A3 (de) 1991-01-30
JPS6483595A (en) 1989-03-29
EP0315572A2 (de) 1989-05-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee