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DE3811313A1 - Housing for hybrid circuits - Google Patents

Housing for hybrid circuits

Info

Publication number
DE3811313A1
DE3811313A1 DE3811313A DE3811313A DE3811313A1 DE 3811313 A1 DE3811313 A1 DE 3811313A1 DE 3811313 A DE3811313 A DE 3811313A DE 3811313 A DE3811313 A DE 3811313A DE 3811313 A1 DE3811313 A1 DE 3811313A1
Authority
DE
Germany
Prior art keywords
substrate
housing
pins
thick
housing according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE3811313A
Other languages
German (de)
Other versions
DE3811313C2 (en
Inventor
Horst Dipl Ing Riedelbauch
Siegfried Guber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Conti Temic Microelectronic GmbH
Original Assignee
Messerschmitt Bolkow Blohm AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Messerschmitt Bolkow Blohm AG filed Critical Messerschmitt Bolkow Blohm AG
Priority to DE3811313A priority Critical patent/DE3811313A1/en
Priority to FR8900216A priority patent/FR2629664B1/en
Publication of DE3811313A1 publication Critical patent/DE3811313A1/en
Application granted granted Critical
Publication of DE3811313C2 publication Critical patent/DE3811313C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K5/00—Casings, cabinets or drawers for electric apparatus
    • H05K5/0091—Housing specially adapted for small components
    • H05K5/0095—Housing specially adapted for small components hermetically-sealed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Casings For Electric Apparatus (AREA)

Abstract

A housing for hybrid circuits, especially electronic or optronic thick-film circuits having a protective-gas filling in the space which is surrounded by a cover and is hermetically sealed. The substrate is at the same time the housing base, and the cover can be connected directly to it. The substrate advantageously consists of ceramic and is coated with a metal layer on its outside for electromagnetic screening. A thick-film pattern for populating with monolithically integrated circuits and other components is applied on the side of the substrate facing the interior.

Description

Die Erfindung betrifft ein Gehäuse für Hybrid-Schaltungen, insbesondere elektronische oder optronische Dickschichtschaltungen auf isolierendem Substrat mit metallischen elektrischen Durchführungen, hermetisch ge­ kapselt mit einer Schutzgasfüllung.The invention relates to a housing for hybrid circuits, in particular electronic or optronic thick-film circuits on insulating Substrate with metallic electrical feedthroughs, hermetically sealed encapsulates with a protective gas filling.

Derartige hermetisch und elektromagnetisch dichte Gehäuse für Hybrid- Bausteine finden Anwendung vor allem in der Flugzeug- und Raumfahrtelek­ tronik sowie in der Wehrtechnik. Es ist bekannt, Hybrid-Schaltungen aus passiven und aktiven elektronischen Bauteilen in einem metallischen Ge­ häuse unterzubringen und dieses unter Füllung mit Schutzgas dicht zu verschließen. Die Bauelemente sind dabei gemeinsam auf einem isolieren­ den, gesonderten Substrat aufgebracht. Das Substrat wird auf einen me­ tallischen Gehäuseboden aufgeklebt, der mit eingeglasten elektrischen Durchführungsstiften (Pins oder andere elektrische Verbindungspfosten) versehen ist. Die elektrischen Verbindungen bei Halbleiter-Bauelementen und Anschlußstiften des Gehäuses werden üblicherweise in Wire-Bond-Tech­ nik ausgeführt, wobei Probleme auftreten, sowohl hinsichtlich der Haft­ festigkeit der Verbindungen als auch wegen der erforderlichen Bewegungs­ freiheit, die die Montagewerkzeuge haben müssen.Such hermetically and electromagnetically sealed housing for hybrid Modules are used primarily in aircraft and space technology tronics and defense technology. It is known to make hybrid circuits passive and active electronic components in a metallic Ge housing and this tightly filled with protective gas close. The components are insulated together on one applied the separate substrate. The substrate is on a me glued on the metallic case back, the glass with electrical Feedthrough pins (pins or other electrical connection posts) is provided. The electrical connections in semiconductor devices and pins of the housing are usually in wire bond tech nik performed with problems, both in terms of detention strength of the connections as well as due to the required movement freedom that the assembly tools must have.

Aufgabe der Erfindung ist es, ein Gehäuse zu schaffen mit vereinfachtem Aufbau und leichterer Herstellbarkeit, jedoch in hohem Qualitätsstandard insbesondere hinsichtlich der hergestellten Verbindungen und der Dicht­ heit des Gehäuses.The object of the invention is to provide a housing with a simplified Structure and easier to manufacture, but in a high quality standard especially with regard to the connections made and the seal unit of the housing.

Gelöst wird diese Aufgabe erfindungsgemäß durch die in Anspruch 1 aufge­ führten Merkmale. Aus- und Weiterbildungen der Erfindung sind den weite­ ren Ansprüchen sowie den Zeichnungen, Beschreibungen des Ausführungsbei­ spieles zu entnehmen. Zur Erfindung gehören nach aller Regel Kombinatio­ nen und Unterkombinationen der beanspruchten, beschriebenen und darge­ stellten Merkmale.
This object is achieved according to the invention by the features listed in claim 1. Training and further developments of the invention can be found in the wide ren claims and the drawings, descriptions of the game Ausführungsbei. To the invention are all rule combinations and sub-combinations of the claimed, described and Darge presented features.

Im Ausführungsbeispiel zeigen:In the exemplary embodiment show:

Fig. 1 einen Querschnitt durch das Gehäuse mit Hybrid-Schaltung; Fig. 1 shows a cross section through the housing with the hybrid circuit;

Fig. 2 eine Draufsicht auf die Hybrid-Schaltung; Fig. 2 is a plan view of the hybrid circuit;

Fig. 3 eine Unteransicht einer Durchkontaktierung; Fig. 3 is a bottom view of a via;

Fig. 4 einen Querschnitt gemäß Fig. 3; FIG. 4 shows a cross section according to FIG. 3;

Fig. 5 eine Draufsicht gemäß Fig. 3. Fig. 5 is a plan view of FIG. 3.

Wie aus Fig. 1 ersichtlich, besteht das Gehäuse aus einem Gehäuseboden- Substrat 1 aus Isoliermaterial mit durchmetallisierten Bohrungen 4 und eingelöteten Anschlußstiften 3 und wird abgeschlossen von einem Metall­ deckel 2.As can be seen from FIG. 1, the housing consists of a housing base substrate 1 made of insulating material with through-metallized holes 4 and soldered-in connecting pins 3 and is closed by a metal cover 2 .

Um eine hermetische Dichtheit des Gehäuses zu erreichen, sind die Durch­ führungsbohrungen im Siebdruck beidseitig durchmetallisiert, wie Fig. 4 zeigt, und die Anschlußstifte werden mit einem hochschmelzenden Lot in die Metallisierungen eingelötet. Um eine elektromagnetisch dichte Ab­ schirmung zu erhalten, ist das Substrat 1 beschichtet: Es ist auf seiner Außenseite mit einer Metallschicht versehen, wobei die Durchführungen in der Schicht 5 ringförmig elektrisch isolierend ausgespart (bei 6 um die Lötaugen herum gemäß Fig. 3 beabstandet) sind, jedoch in mindestens einem Fall elektrischer Kontakt durch Nichtbeabstandung gegeben ist. Um den Metalldeckel 2 auf das Gehäuse aufbringen zu können, besitzt das Substrat 1 eine, die gesamte Hybrid-Anordnung einschließende, bis an den Rand reichende Metallisierung (7) aus einer oder mehreren Schichten, von denen wenigstens eine aus einem Material zur Verbindung mit dem Deckel 2 besteht.In order to achieve a hermetic seal of the housing, the through-holes in the screen printing are metallized on both sides, as shown in FIG. 4, and the connecting pins are soldered into the metallizations with a high-melting solder. In order to obtain an electromagnetically tight shielding, the substrate 1 is coated: it is provided on its outside with a metal layer, the bushings in the layer 5 being recessed in a ring in an electrically insulating manner (spaced 6 around the soldering eyes according to FIG. 3) , but in at least one case there is electrical contact due to non-spacing. In order to be able to apply the metal cover 2 to the housing, the substrate 1 has a metallization ( 7 ), which includes the entire hybrid arrangement and extends to the edge, of one or more layers, at least one of which is made of a material for connection to the Cover 2 exists.

Das Substrat 1, welches den Gehäuseboden bildet, ist aus einem Isolier­ material, wie Keramik oder Glas bestehend, wobei übliche elektrisch-iso­ lierende Werkstoffe, wie Aluminiumoxid, Aluminiumnitrit, Berilliumoxid, Magnesiumoxid oder ähnlich geeignete Substrate verwendet werden.The substrate 1 , which forms the housing bottom, is made of an insulating material, such as ceramic or glass, with customary electrically-insulating materials such as aluminum oxide, aluminum nitrite, beryllium oxide, magnesium oxide or similar suitable substrates being used.

Wesentlich ist eine ausreichende Dichtheit und Temperaturbeständigkeit für die Zwecke der Erfindung, dies gilt auch für das zu verwendende Glas. Selbstverständlich kann auch Quarzglas, SiO2, oder eine Glas­ keramik oder eine Siliziumkeramik verwendet werden, wie Si3N4 oder SiC. Mischsubstrate sind anwendbar, ebenso bereits vorgefertigte, ein­ seitig metallisierte Keramik- oder Glassubstrate. Als Metall für den Deckel 2 werden mit der Keramik gut verbindbare Metalle bevorzugt, ins­ besondere eine Legierung, wie sie unter dem Handelsnamen "Kovar" erhält­ lich ist. Diese oder ähnliche Legierungen werden bevorzugt, weil sie einen der Keramik angeglichenen thermischen Ausdehnungskoeffizienten aufweisen. Zur Verbindung des Deckels mit dem Substrat dient eine Lot­ schicht, insbesodere aus einem Zinnbasislot mit vorzugsweise Schmelz­ punkt von unter 200°C. Das Lot kann entweder direkt oder über eine oder mehrere Zwischenschichten mit dem Substrat 1 im Randbereich 7 verbunden werden. Diese eine oder mehrere Verbindungsschichten 7 sind vorzugsweise zusammen in einem Arbeitsgang mit der Dickschichtschaltung im Siebdruck auf der Oberseite des Substrats aufgebracht, vgl. Fig. 1 und Fig. 2. Selbstverständlich sind auch andere Materialien, wie sie zur Verbindung zwischen Metall und Metall-Keramik-Schichten und zur Verbindung zwischen Metall und Metall-Glas-Schichten bekannt sind, anwendbar. Dieses nämlich wird um etwa 150°C höher schmelzend gewählt, insbesonders ein Lot auf einer Bleibasis. Es gibt auch andere Lote mit Schmelzpunkten über 250°C, insbesonders 300°C bis 400°C, die geeignet sind. Bei der Wahl des Verbindungsmaterials sollte man beachten, daß beim hermetisch dich­ ten Verschließen des Gehäuses mit Hilfe des Deckels 2 frühere Kontaktie­ rungen, Lotverbindungen und andere Verbindungen (Bonddrähte) nicht mehr als notwendig erhitzt werden dürfen.Adequate tightness and temperature resistance are essential for the purposes of the invention; this also applies to the glass to be used. Of course, quartz glass, SiO 2 , or a glass ceramic or a silicon ceramic can also be used, such as Si 3 N 4 or SiC. Mixed substrates can be used, as can pre-fabricated one-sided metallized ceramic or glass substrates. As the metal for the cover 2 , metals which can be easily connected to the ceramic are preferred, in particular an alloy such as is obtainable under the trade name "Kovar". These or similar alloys are preferred because they have a thermal expansion coefficient matched to the ceramic. A solder layer is used to connect the lid to the substrate, in particular from a tin base solder, preferably with a melting point of below 200 ° C. The solder can be connected to the substrate 1 in the edge region 7 either directly or via one or more intermediate layers. These one or more connecting layers 7 are preferably applied together in one operation with the thick-layer circuit using screen printing on the upper side of the substrate, cf. Fig. 1 and Fig. 2. Of course, other materials such as are known for the connection between metal and metal-ceramic layers and for the connection between metal and metal-glass layers can also be used. This is because it is chosen to melt around 150 ° C higher, in particular a solder based on lead. There are other solders with melting points above 250 ° C, especially 300 ° C to 400 ° C, which are suitable. When choosing the connection material, you should note that when hermetically sealing the housing with the help of the cover 2, previous contacts, solder connections and other connections (bonding wires) must not be heated more than necessary.

Bei der Herstellung wird zunächst auf dem Substrat 1, das als Gehäuse­ boden dient, die Dickschichtschaltung im Siebdruckverfahren mittels be­ kannter Dickschichtmaterialien aufgebracht, insbesondere unter Verwen­ dung edelmetallhaltiger Siebdruckpasten. Diese werden dann in einem ge­ eigneten Ofen eingebrannt, Eine Einzelheit, wie die Durchtrittsmateria­ lien oder das Lot in die Bohrungen 4 eingebracht werden, um im Quer­ schnitt runde, quadratische oder rechteckige Pins 3 einzulöten, ist in Fig. 4 ersichtlich, dabei wird deutlich, daß die Durchmetallisierung von beiden Seiten des Substrats erfolgt. Auch diese Lotverbindung ist absolut dicht. Dann erfolgt mittels des SMD-Montageroboters (Surface Mounter Device) die Bestückung mit den Halbleiterbauelementen auf dem Dickschichtmuster 11. Deren Verbindungen können mittels Bonddrähten 10 vom Bauteil 8 zum Dickschichtmuster 11 erfolgen. In Verlängerung des Dickschichtmusters sind nach Fig. 5 Lötaugen auf der Innenraumseite des Substrats 1 entstanden.In the manufacture, the thick-layer circuit is first applied to the substrate 1 , which serves as the housing base, in the screen printing process by means of known thick-layer materials, in particular using screen printing pastes containing noble metals. These are then baked in a suitable oven. A detail of how the passage materials or the solder are introduced into the holes 4 in order to solder round, square or rectangular pins 3 in cross section can be seen in FIG. 4, it becomes clear that the through-metallization takes place from both sides of the substrate. This solder connection is also absolutely tight. Then the SMD assembly robot (surface mounter device) is used to populate the semiconductor components on the thick-film pattern 11 . Their connections can be made from the component 8 to the thick-film pattern 11 by means of bonding wires 10 . As an extension of the thick-film pattern, soldering eyes are formed on the inner side of the substrate 1 according to FIG .

Vorteile der Erfindung:Advantages of the invention:

Die mit der Erfindung erzielten Vorteile bestehen insbesondere darin, daßThe advantages achieved by the invention are in particular that

  • - der Aufbau der Gehäuse vereinfacht ist,- the structure of the housing is simplified,
  • - hohe Herstellungskosten für die Gehäuse gesenkt werden- High manufacturing costs for the housing can be reduced
  • - und hohe Werkzeugkosten für Sonderabmaße entfallen.- and high tool costs for special dimensions are eliminated.
  • - Das kostspielige Einglasen der Durchführungsstifte entfällt,- The costly glassing in of the lead-through pins is eliminated,
  • - thermische Übergangswiderstände, wie sie beim Einkleben durch die Kleberschicht entstehen, fallen weg.- Thermal contact resistance, such as when gluing through the Adhesive layer arise, do not exist.

Die Zuverlässigkeit wird erhöht durch Wegfall der Kleberausgasung.Reliability is increased by eliminating the outgassing of adhesive.

  • - Die Wire-Bond-Verbindungen 10 vom Substrat 1 zu den Durchführungs­ stiften 3 entfallen, bzw. werden durch die viel zuverlässigeren siebgedruckten Leiterbahnverbindungen 11 ersetzt.- The wire bond connections 10 from the substrate 1 to the bushing pins 3 are omitted, or are replaced by the much more reliable screen printed interconnect connections 11 .
  • - Die Anschlußstifte können gegebenenfalls unmittelbar dort angebracht werden, wo sie gebraucht werden, d.h. optimal kurze elektrische Wege können von dem Bauteil heraus auf eine nicht dargestellte Träger­ platine für das Gehäuse erreicht werden,- The pins can be attached directly there if necessary where they are needed, i.e. optimally short electrical paths can from the component on a carrier, not shown circuit board for the housing can be reached
  • - bei gleicher Grundfläche des Substrats steht mehr Platz für Leiter­ bahnen und Bauteile zur Verfügung,- With the same base area of the substrate, there is more space for conductors tracks and components available,
  • - und insgesamt wird eine beträchtliche Gewichtseinsparung erreicht, da der Metallgehäuseboden entfällt.- and overall a considerable weight saving is achieved, since the metal case bottom is omitted.

Claims (8)

1. Gehäuse für Hybrid-Schaltungen, insbesondere elektronische oder optronische Dickschichtschaltungen auf isolierendem Substrat mit metal­ lischen, elektrischen Durchführungen, hermetisch gekapselt mit einer Schutzgasfüllung, dadurch gekennzeichnet, daß das Substrat (1) zu­ gleich den Gehäuseboden bildet und an seinem äußeren Randbereich (7) eine oder mehrere Schichten trägt, von denen wenigstens eine aus einem Material zum Verbinden mit dem metallischem Gehäusedeckel besteht.1. Housing for hybrid circuits, in particular electronic or optronic thick-film circuits on an insulating substrate with metallic, electrical feedthroughs, hermetically encapsulated with a protective gas filling, characterized in that the substrate ( 1 ) forms the same as the housing bottom and at its outer edge region ( 7 ) carries one or more layers, at least one of which consists of a material for connection to the metallic housing cover. 2. Gehäuse nach Anspruch 1, dadurch gekennzeichnet, daß das den Boden bildende Substrat (1) aus Keramik besteht, die auf der dem Innen­ raum zugekehrten Seite das Dickschichtmuster (11) für monolithisch inte­ grierte Schaltkreise und sonstige Bauelemente (9) trägt.2. Housing according to claim 1, characterized in that the substrate forming the bottom ( 1 ) consists of ceramic, which on the inner side facing the thick-film pattern ( 11 ) for monolithic inte grated circuits and other components ( 9 ). 3. Gehäuse nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß das Dickschichtmuster (11) auf dem Substrat (1) einseitig aufgedruckt ist und zugleich elektrische Durchführungen (4) beidseitig schichtartig (vgl. Fig. 4) aufgedruckt sind.3. Housing according to claim 1 or 2, characterized in that the thick-film pattern ( 11 ) on the substrate ( 1 ) is printed on one side and at the same time electrical feedthroughs ( 4 ) are printed in layers on both sides (see. Fig. 4). 4. Gehäuse nach einem der vorhergehenden Ansprüche, dadurch gekenn­ zeichnet, daß auf dem Substrat (1) auf der dem Innenraum abgekehrten Seite eine Metallschicht (5) als elektromagnetischer Schutz aufgebracht ist.4. Housing according to one of the preceding claims, characterized in that on the substrate ( 1 ) on the side facing away from the interior, a metal layer ( 5 ) is applied as electromagnetic protection. 5. Gehäuse nach einem der vorhergehenden Ansprüche, dadurch gekenn­ zeichnet, daß von einer Oberflächenseite aus (vom Innenraum) in das Substrat (1) an den Durchführungen (4) Stifte (Pins 3) eingelötet sind. 5. Housing according to one of the preceding claims, characterized in that from a surface side (from the interior) in the substrate ( 1 ) on the bushings ( 4 ) pins (pins 3 ) are soldered. 6. Gehäuse nach einem der vorhergehenden Ansprüche, dadurch gekenn­ zeichnet, daß die Metallschicht (5) ringförmig (6) ausgespart ist (nach Fig. 3) um die Lötaugen herum, welche die Stifte (Pins 3) im eingelöte­ ten Zustand umgeben und auf der der Metallschicht (5) abgekehrten Seite des Substrats (1) die Lötaugen (nach Fig. 5) in Verlängerung des Dick­ schichtmusters (11) gebildet sind.6. Housing according to one of the preceding claims, characterized in that the metal layer ( 5 ) annular ( 6 ) is recessed (according to Fig. 3) around the solder eyes, which surround the pins (pins 3 ) in the soldered state and on the side of the substrate ( 1 ) facing away from the metal layer ( 5 ) the solder eyes (according to FIG. 5) are formed in an extension of the thick layer pattern ( 11 ). 7. Gehäuse nach einem der vorhergehenden Ansprüche, dadurch gekenn­ zeichnet, daß alle Durchführungen (4) für die Stifte (Pins 3) innerhalb der Fläche des Substrats (1) - und des Deckels (2) - bevorzugt mit Ab­ stand zum Außenrand derselben angeordnet sind.7. Housing according to one of the preceding claims, characterized in that all feedthroughs ( 4 ) for the pins (pins 3 ) within the surface of the substrate ( 1 ) - and the cover ( 2 ) - preferably arranged from the outside edge thereof are. 8. Gehäuse nach einem der vorhergehenden Ansprüche, dadurch gekenn­ zeichnet, daß die Pins (3) auf einer Trägerplatine in den Gehäuseboden einlötbar sind.8. Housing according to one of the preceding claims, characterized in that the pins ( 3 ) can be soldered onto a carrier board in the housing base.
DE3811313A 1988-04-02 1988-04-02 Housing for hybrid circuits Granted DE3811313A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE3811313A DE3811313A1 (en) 1988-04-02 1988-04-02 Housing for hybrid circuits
FR8900216A FR2629664B1 (en) 1988-04-02 1989-01-10 HOUSING FOR HYBRID CIRCUITS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3811313A DE3811313A1 (en) 1988-04-02 1988-04-02 Housing for hybrid circuits

Publications (2)

Publication Number Publication Date
DE3811313A1 true DE3811313A1 (en) 1989-10-19
DE3811313C2 DE3811313C2 (en) 1992-12-10

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FR (1) FR2629664B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3941680A1 (en) * 1989-12-18 1991-06-20 Telefunken Electronic Gmbh PLASTIC HOUSING FOR ELECTRONIC COMPONENTS
DE4436903A1 (en) * 1994-10-15 1996-04-18 Daimler Benz Ag Electromagnetic screening and sealing circuit packages
DE4345594B4 (en) * 1993-06-14 2011-08-11 EMI-tec Elektronische Materialien GmbH, 12277 Dispensed, electrically-conductive, resilient plastic seal completing electromagnetic screening, comprises screening profile consisting of overlapping and adjacent strands

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2654891A1 (en) * 1989-11-20 1991-05-24 Alcatel Radiotelephone SHIELD FOR RADIO FREQUENCY CIRCUIT.
US5177595A (en) * 1990-10-29 1993-01-05 Hewlett-Packard Company Microchip with electrical element in sealed cavity
FI109960B (en) * 1991-09-19 2002-10-31 Nokia Corp Electronic device
DE19516548A1 (en) * 1995-05-05 1996-11-14 Blaupunkt Werke Gmbh Cover cap for electronic component

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Publication number Priority date Publication date Assignee Title
DE3527818A1 (en) * 1985-08-02 1987-02-26 Rose Elektrotech Gmbh HOUSING FOR A HYBRID CIRCUIT
DE3604882A1 (en) * 1986-02-15 1987-08-20 Bbc Brown Boveri & Cie PERFORMANCE SEMICONDUCTOR MODULE AND METHOD FOR PRODUCING THE MODULE

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GB1361176A (en) * 1971-07-05 1974-07-24 Smiths Industries Ltd Electrical devices
CH660258A5 (en) * 1983-01-20 1987-03-31 Landis & Gyr Ag CERAMIC HOUSING FOR A HYBRID CIRCUIT.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3527818A1 (en) * 1985-08-02 1987-02-26 Rose Elektrotech Gmbh HOUSING FOR A HYBRID CIRCUIT
DE3604882A1 (en) * 1986-02-15 1987-08-20 Bbc Brown Boveri & Cie PERFORMANCE SEMICONDUCTOR MODULE AND METHOD FOR PRODUCING THE MODULE

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3941680A1 (en) * 1989-12-18 1991-06-20 Telefunken Electronic Gmbh PLASTIC HOUSING FOR ELECTRONIC COMPONENTS
DE4345594B4 (en) * 1993-06-14 2011-08-11 EMI-tec Elektronische Materialien GmbH, 12277 Dispensed, electrically-conductive, resilient plastic seal completing electromagnetic screening, comprises screening profile consisting of overlapping and adjacent strands
DE4436903A1 (en) * 1994-10-15 1996-04-18 Daimler Benz Ag Electromagnetic screening and sealing circuit packages
DE4436903C2 (en) * 1994-10-15 2003-10-30 Daimler Chrysler Ag Arrangement for electromagnetic shielding of electronic circuits and method for producing such an arrangement

Also Published As

Publication number Publication date
DE3811313C2 (en) 1992-12-10
FR2629664A1 (en) 1989-10-06
FR2629664B1 (en) 1993-12-03

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