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DE3769837D1 - Verfahren und apparat zum testen von halbleiterelementen. - Google Patents

Verfahren und apparat zum testen von halbleiterelementen.

Info

Publication number
DE3769837D1
DE3769837D1 DE8787304121T DE3769837T DE3769837D1 DE 3769837 D1 DE3769837 D1 DE 3769837D1 DE 8787304121 T DE8787304121 T DE 8787304121T DE 3769837 T DE3769837 T DE 3769837T DE 3769837 D1 DE3769837 D1 DE 3769837D1
Authority
DE
Germany
Prior art keywords
semiconductor elements
testing semiconductor
testing
elements
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787304121T
Other languages
English (en)
Inventor
Yasuhiro C O Oki Electr Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Application granted granted Critical
Publication of DE3769837D1 publication Critical patent/DE3769837D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • G01R31/3161—Marginal testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
    • G01R31/129—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of components or parts made of semiconducting materials; of LV components or parts

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
DE8787304121T 1986-05-09 1987-05-08 Verfahren und apparat zum testen von halbleiterelementen. Expired - Fee Related DE3769837D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61104720A JPH0769385B2 (ja) 1986-05-09 1986-05-09 半導体装置の試験方法及びその装置

Publications (1)

Publication Number Publication Date
DE3769837D1 true DE3769837D1 (de) 1991-06-13

Family

ID=14388323

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787304121T Expired - Fee Related DE3769837D1 (de) 1986-05-09 1987-05-08 Verfahren und apparat zum testen von halbleiterelementen.

Country Status (4)

Country Link
US (1) US4823088A (de)
EP (1) EP0245115B1 (de)
JP (1) JPH0769385B2 (de)
DE (1) DE3769837D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0651018A (ja) * 1992-06-03 1994-02-25 Seiko Epson Corp 半導体装置の試験方法および試験装置
JP2921270B2 (ja) * 1992-07-16 1999-07-19 三菱電機株式会社 経時絶縁膜破壊評価方法および経時絶縁膜破壊評価装置
US5376879A (en) * 1992-11-03 1994-12-27 Qrp, Incorporated Method and apparatus for evaluating electrostatic discharge conditions
US5381105A (en) * 1993-02-12 1995-01-10 Motorola, Inc. Method of testing a semiconductor device having a first circuit electrically isolated from a second circuit
US5410254A (en) * 1993-03-04 1995-04-25 Lsi Logic Corporation Method for optimizing the structure of a transistor to withstand electrostatic discharge
JP2836676B2 (ja) * 1996-02-09 1998-12-14 日本電気株式会社 半導体要素の試験方法及び装置
US5796256A (en) * 1996-04-24 1998-08-18 Motorola, Inc. ESD sensor and method of use
US6265885B1 (en) * 1999-09-02 2001-07-24 International Business Machines Corporation Method, apparatus and computer program product for identifying electrostatic discharge damage to a thin film device
JP3701954B2 (ja) * 2003-07-08 2005-10-05 松下電器産業株式会社 半導体集積回路、その静電気耐圧試験方法及び装置
US7138804B2 (en) * 2003-08-08 2006-11-21 Industrial Technology Research Institute Automatic transmission line pulse system
US7119597B1 (en) * 2004-01-07 2006-10-10 Thermo Electron Corporation Methods and apparatus to produce a voltage pulse
US7005858B1 (en) * 2004-09-23 2006-02-28 Hitachi Global Storage Technologies Netherlands, B.V. System and method for decreasing ESD damage during component level long term testing
US7199375B2 (en) * 2004-10-12 2007-04-03 Bard Brachytherapy, Inc. Radiation shielding container that encloses a vial of one or more radioactive seeds
CN100405073C (zh) * 2004-12-22 2008-07-23 中芯国际集成电路制造(上海)有限公司 防止半导体器件中大电流损伤的电容器击穿测试结构
ATE473451T1 (de) * 2007-10-30 2010-07-15 Ismeca Semiconductor Holding Prüfstand zum prüfen des kriechstroms durch das isoliergehäuse von leistungselektronischen bauteilen und entsprechendes verfahren
US8344746B2 (en) * 2008-09-29 2013-01-01 Thermo Fisher Scientific Inc. Probe interface for electrostatic discharge testing of an integrated circuit
US8659300B2 (en) * 2010-12-15 2014-02-25 International Business Machines Corporation Stress testing of silicon-on-insulator substrates using applied electrostatic discharge

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6073375A (ja) * 1983-09-30 1985-04-25 Oki Electric Ind Co Ltd 半導体装置の試験方法

Also Published As

Publication number Publication date
EP0245115B1 (de) 1991-05-08
US4823088A (en) 1989-04-18
JPH0769385B2 (ja) 1995-07-31
JPS62261974A (ja) 1987-11-14
EP0245115A1 (de) 1987-11-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee