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DE3750382D1 - Züchtung eines Halbleiterkristalls via variabler Schmelze-Rotation. - Google Patents

Züchtung eines Halbleiterkristalls via variabler Schmelze-Rotation.

Info

Publication number
DE3750382D1
DE3750382D1 DE3750382T DE3750382T DE3750382D1 DE 3750382 D1 DE3750382 D1 DE 3750382D1 DE 3750382 T DE3750382 T DE 3750382T DE 3750382 T DE3750382 T DE 3750382T DE 3750382 D1 DE3750382 D1 DE 3750382D1
Authority
DE
Germany
Prior art keywords
growing
semiconductor crystal
via variable
crystal via
melt rotation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3750382T
Other languages
English (en)
Other versions
DE3750382T2 (de
Inventor
Kyong-Min Kim
Pavel Smetana
Wolfgang Alfred Westdorp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE3750382D1 publication Critical patent/DE3750382D1/de
Application granted granted Critical
Publication of DE3750382T2 publication Critical patent/DE3750382T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE3750382T 1986-04-28 1987-03-04 Züchtung eines Halbleiterkristalls via variabler Schmelze-Rotation. Expired - Fee Related DE3750382T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/856,872 US4659423A (en) 1986-04-28 1986-04-28 Semiconductor crystal growth via variable melt rotation

Publications (2)

Publication Number Publication Date
DE3750382D1 true DE3750382D1 (de) 1994-09-22
DE3750382T2 DE3750382T2 (de) 1995-03-30

Family

ID=25324681

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3750382T Expired - Fee Related DE3750382T2 (de) 1986-04-28 1987-03-04 Züchtung eines Halbleiterkristalls via variabler Schmelze-Rotation.

Country Status (4)

Country Link
US (1) US4659423A (de)
EP (1) EP0247297B1 (de)
JP (1) JPH0777997B2 (de)
DE (1) DE3750382T2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008027359A1 (de) 2008-06-04 2009-12-17 Forschungsverbund Berlin E.V. Verfahren zur intensiven Durchmischung von elektrisch leitenden Schmelzen in Kristallisations- und Erstarrungsprozessen
DE102009045680A1 (de) 2009-10-14 2011-04-28 Forschungsverbund Berlin E.V. Vorrichtung und Verfahren zur Herstellung von Siliziumblöcken aus der Schmelze durch gerichtete Erstarrung
DE102009046845A1 (de) 2009-11-18 2011-06-01 Forschungsverbund Berlin E.V. Kristallisationsanlage und Kristallisationsverfahren

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JPS6144797A (ja) * 1984-08-10 1986-03-04 Toshiba Corp 単結晶育成装置およびその制御方法
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JP2556966B2 (ja) * 1986-04-30 1996-11-27 東芝セラミツクス株式会社 単結晶の育成装置
JP2651481B2 (ja) * 1987-09-21 1997-09-10 株式会社 半導体エネルギー研究所 超伝導材料の作製方法
WO1990003952A1 (en) * 1988-10-07 1990-04-19 Crystal Systems, Inc. Method of growing silicon ingots using a rotating melt
JPH0431386A (ja) * 1990-05-25 1992-02-03 Shin Etsu Handotai Co Ltd 半導体単結晶引上方法
JP2546736B2 (ja) * 1990-06-21 1996-10-23 信越半導体株式会社 シリコン単結晶引上方法
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
US5314667A (en) * 1991-03-04 1994-05-24 Lim John C Method and apparatus for single crystal silicon production
US5178720A (en) * 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates
JPH07267776A (ja) * 1994-03-31 1995-10-17 Sumitomo Sitix Corp 結晶成長方法
DE19529481A1 (de) * 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen
JP3443822B2 (ja) * 1996-03-27 2003-09-08 信越半導体株式会社 シリコン単結晶の製造方法
DE19652543A1 (de) * 1996-12-17 1998-06-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Silicium-Einkristalls und Heizvorrichtung zur Durchführung des Verfahrens
US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
DE10051885B4 (de) * 2000-10-19 2007-07-12 Siltronic Ag Verfahren zum Ziehen eines Einkristalls durch Zonenziehen
DE10234694A1 (de) * 2002-07-30 2004-02-12 Infineon Technologies Ag Verfahren zum Oxidieren einer Schicht und zugehörige Aufnamevorrichtung für ein Substrat
WO2004044277A1 (en) * 2002-11-12 2004-05-27 Memc Electronic Materials, Inc. Process for preparing single crystal silicon using crucible rotation to control temperature gradient
US20060005761A1 (en) * 2004-06-07 2006-01-12 Memc Electronic Materials, Inc. Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length
US7291221B2 (en) * 2004-12-30 2007-11-06 Memc Electronic Materials, Inc. Electromagnetic pumping of liquid silicon in a crystal growing process
US7223304B2 (en) * 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
DE102007028547B4 (de) 2007-06-18 2009-10-08 Forschungsverbund Berlin E.V. Vorrichtung zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen
DE102007046409B4 (de) 2007-09-24 2009-07-23 Forschungsverbund Berlin E.V. Vorrichtung zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen
DE102008035439B4 (de) 2008-07-25 2011-06-16 Forschungsverbund Berlin E.V. Vorrichtung zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen
DE102010041061B4 (de) 2010-09-20 2013-10-24 Forschungsverbund Berlin E.V. Kristallisationsanlage und Kristallisationsverfahren zur Herstellung eines Blocks aus einem Material, dessen Schmelze elektrisch leitend ist
CN102560626A (zh) * 2012-03-10 2012-07-11 天津市环欧半导体材料技术有限公司 一种提高直拉重掺硅单晶径向电阻率均匀性的方法
EP2692907A1 (de) * 2012-08-02 2014-02-05 Siemens Aktiengesellschaft Stromversorgungsvorrichtung für eine Tiegelheizung und Verfahren zu deren Betrieb

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US2686865A (en) * 1951-10-20 1954-08-17 Westinghouse Electric Corp Stabilizing molten material during magnetic levitation and heating thereof
FR1111544A (fr) * 1953-07-28 1956-03-01 Siemens Ag Procédé et dispositif pour la fabrication de cristaux par extraction de masses fondues et cristaux conformes à ceux obtenus
US3493770A (en) * 1966-03-01 1970-02-03 Ibm Radiation sensitive control system for crystal growing apparatus
US3607139A (en) * 1968-05-02 1971-09-21 Air Reduction Single crystal growth and diameter control by magnetic melt agitation
JPS4949307B1 (de) * 1970-02-18 1974-12-26
US3929557A (en) * 1973-06-11 1975-12-30 Us Air Force Periodically and alternately accelerating and decelerating rotation rate of a feed crystal
US4176002A (en) * 1974-08-21 1979-11-27 Agence Nationale De Valorisation De La Recherche (Anvar) Controlling the melt temperature during zone refining and Czochralski crystal growth by sensing the viscous torque of the melt zone during operation
CH580805A5 (de) * 1975-04-14 1976-10-15 Prolizenz Ag
US4040895A (en) * 1975-10-22 1977-08-09 International Business Machines Corporation Control of oxygen in silicon crystals
DE2758888C2 (de) * 1977-12-30 1983-09-22 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Siliciumeinkristalle
JPS55100296A (en) * 1979-01-18 1980-07-31 Osaka Titanium Seizo Kk Production of silicon single crystal
GB2059932B (en) * 1979-09-20 1983-10-12 Sony Corp Solidification processes
JPS5692192A (en) * 1979-12-24 1981-07-25 Nippon Telegr & Teleph Corp <Ntt> Method for growing semiconductor single crystal
DE3069547D1 (en) * 1980-06-26 1984-12-06 Ibm Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
JPH0244799B2 (ja) * 1981-10-26 1990-10-05 Sony Corp Ketsushoseichohoho
JPS5973491A (ja) * 1983-07-11 1984-04-25 Osaka Titanium Seizo Kk 半導体単結晶の製造方法
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
US4569828A (en) * 1984-11-27 1986-02-11 Gakei Electric Works Co., Ltd. Crystal pulling apparatus for making single crystals of compound semiconductors containing a volatile component

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008027359A1 (de) 2008-06-04 2009-12-17 Forschungsverbund Berlin E.V. Verfahren zur intensiven Durchmischung von elektrisch leitenden Schmelzen in Kristallisations- und Erstarrungsprozessen
DE102009045680A1 (de) 2009-10-14 2011-04-28 Forschungsverbund Berlin E.V. Vorrichtung und Verfahren zur Herstellung von Siliziumblöcken aus der Schmelze durch gerichtete Erstarrung
DE102009046845A1 (de) 2009-11-18 2011-06-01 Forschungsverbund Berlin E.V. Kristallisationsanlage und Kristallisationsverfahren

Also Published As

Publication number Publication date
EP0247297A2 (de) 1987-12-02
JPH0777997B2 (ja) 1995-08-23
EP0247297B1 (de) 1994-08-17
JPS62256790A (ja) 1987-11-09
DE3750382T2 (de) 1995-03-30
US4659423A (en) 1987-04-21
EP0247297A3 (en) 1988-09-07

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee