DE3683028D1 - Verfahren zum aetzen einer metallschicht einer laminierten metall/polymer-struktur. - Google Patents
Verfahren zum aetzen einer metallschicht einer laminierten metall/polymer-struktur.Info
- Publication number
- DE3683028D1 DE3683028D1 DE8686114534T DE3683028T DE3683028D1 DE 3683028 D1 DE3683028 D1 DE 3683028D1 DE 8686114534 T DE8686114534 T DE 8686114534T DE 3683028 T DE3683028 T DE 3683028T DE 3683028 D1 DE3683028 D1 DE 3683028D1
- Authority
- DE
- Germany
- Prior art keywords
- etching
- metal
- polymer structure
- metal layer
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002184 metal Substances 0.000 title 2
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229920000642 polymer Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/10—Aluminium or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/12—Copper or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/14—Titanium or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
- B23K2103/42—Plastics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/793,608 US4684437A (en) | 1985-10-31 | 1985-10-31 | Selective metal etching in metal/polymer structures |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3683028D1 true DE3683028D1 (de) | 1992-01-30 |
Family
ID=25160338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686114534T Expired - Lifetime DE3683028D1 (de) | 1985-10-31 | 1986-10-21 | Verfahren zum aetzen einer metallschicht einer laminierten metall/polymer-struktur. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4684437A (de) |
EP (1) | EP0227903B1 (de) |
JP (1) | JPS6336531A (de) |
DE (1) | DE3683028D1 (de) |
Families Citing this family (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4894598A (en) * | 1986-11-20 | 1990-01-16 | Staubli International Ag | Digital robot control having an improved pulse width modulator |
US4882200A (en) * | 1987-05-21 | 1989-11-21 | General Electric Company | Method for photopatterning metallization via UV-laser ablation of the activator |
US5269868A (en) * | 1989-10-12 | 1993-12-14 | Mitsubishi Denki Kabushiki Kaisha | Method for separating bonded substrates, in particular disassembling a liquid crystal display device |
US5066357A (en) * | 1990-01-11 | 1991-11-19 | Hewlett-Packard Company | Method for making flexible circuit card with laser-contoured vias and machined capacitors |
US5093279A (en) * | 1991-02-01 | 1992-03-03 | International Business Machines Corporation | Laser ablation damascene process |
US5221426A (en) * | 1991-11-29 | 1993-06-22 | Motorola Inc. | Laser etch-back process for forming a metal feature on a non-metal substrate |
CA2097388A1 (en) * | 1992-07-16 | 1994-01-17 | Susan Nord Bohlke | Topographical selective patterns |
JP2951215B2 (ja) * | 1993-09-10 | 1999-09-20 | レイセオン・カンパニー | 位相マスクレーザによる微細なパターンの電子相互接続構造の製造方法 |
US5841099A (en) * | 1994-07-18 | 1998-11-24 | Electro Scientific Industries, Inc. | Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets |
US5843363A (en) * | 1995-03-31 | 1998-12-01 | Siemens Aktiengesellschaft | Ablation patterning of multi-layered structures |
US6025256A (en) * | 1997-01-06 | 2000-02-15 | Electro Scientific Industries, Inc. | Laser based method and system for integrated circuit repair or reconfiguration |
US6057180A (en) * | 1998-06-05 | 2000-05-02 | Electro Scientific Industries, Inc. | Method of severing electrically conductive links with ultraviolet laser output |
US6207553B1 (en) | 1999-01-26 | 2001-03-27 | Advanced Micro Devices, Inc. | Method of forming multiple levels of patterned metallization |
US6645359B1 (en) | 2000-10-06 | 2003-11-11 | Roche Diagnostics Corporation | Biosensor |
US6662439B1 (en) | 1999-10-04 | 2003-12-16 | Roche Diagnostics Corporation | Laser defined features for patterned laminates and electrodes |
US7073246B2 (en) * | 1999-10-04 | 2006-07-11 | Roche Diagnostics Operations, Inc. | Method of making a biosensor |
US6540890B1 (en) * | 2000-11-01 | 2003-04-01 | Roche Diagnostics Corporation | Biosensor |
HUE039852T2 (hu) | 2003-06-20 | 2019-02-28 | Hoffmann La Roche | Eljárás és reagens keskeny, homogén reagenscsíkok elõállítására |
JP2005118821A (ja) * | 2003-10-16 | 2005-05-12 | Olympus Corp | 超短パルスレーザ加工方法 |
JP2007536239A (ja) * | 2004-05-06 | 2007-12-13 | スミスクライン・ビーチャム・コーポレイション | カルシウム受容体アンタゴニスト化合物 |
WO2005111728A2 (en) * | 2004-05-10 | 2005-11-24 | Matsushita Electric Industrial Co., Ltd. | Composite sheet material selection method for use in ultra-fast laser patterning |
EP1897157B1 (de) | 2005-06-01 | 2019-08-21 | Flexenable Limited | Schichtenselektive laserablations-strukturierung |
GB0511132D0 (en) | 2005-06-01 | 2005-07-06 | Plastic Logic Ltd | Layer-selective laser ablation patterning |
TWI478351B (zh) * | 2006-07-20 | 2015-03-21 | Au Optronics Corp | 陣列基板之形成方法 |
KR101562808B1 (ko) * | 2008-03-06 | 2015-10-23 | 팬듀트 코포레이션 | 크로스토크 감쇠가 향상된 통신 케이블 |
US8183462B2 (en) * | 2008-05-19 | 2012-05-22 | Panduit Corp. | Communication cable with improved crosstalk attenuation |
US8354590B2 (en) | 2008-11-10 | 2013-01-15 | Panduit Corp. | Communication cable with improved crosstalk attenuation |
US8558115B2 (en) | 2009-03-03 | 2013-10-15 | Panduit Corp. | Communication cable including a mosaic tape |
US8642448B2 (en) | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
US8507363B2 (en) | 2011-06-15 | 2013-08-13 | Applied Materials, Inc. | Laser and plasma etch wafer dicing using water-soluble die attach film |
US8912077B2 (en) | 2011-06-15 | 2014-12-16 | Applied Materials, Inc. | Hybrid laser and plasma etch wafer dicing using substrate carrier |
US8557683B2 (en) | 2011-06-15 | 2013-10-15 | Applied Materials, Inc. | Multi-step and asymmetrically shaped laser beam scribing |
US8598016B2 (en) * | 2011-06-15 | 2013-12-03 | Applied Materials, Inc. | In-situ deposited mask layer for device singulation by laser scribing and plasma etch |
US9129904B2 (en) | 2011-06-15 | 2015-09-08 | Applied Materials, Inc. | Wafer dicing using pulse train laser with multiple-pulse bursts and plasma etch |
US8759197B2 (en) | 2011-06-15 | 2014-06-24 | Applied Materials, Inc. | Multi-step and asymmetrically shaped laser beam scribing |
US8703581B2 (en) | 2011-06-15 | 2014-04-22 | Applied Materials, Inc. | Water soluble mask for substrate dicing by laser and plasma etch |
US9029242B2 (en) | 2011-06-15 | 2015-05-12 | Applied Materials, Inc. | Damage isolation by shaped beam delivery in laser scribing process |
US20120322235A1 (en) * | 2011-06-15 | 2012-12-20 | Wei-Sheng Lei | Wafer dicing using hybrid galvanic laser scribing process with plasma etch |
US8501613B2 (en) * | 2011-07-07 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | UBM etching methods for eliminating undercut |
US8946057B2 (en) | 2012-04-24 | 2015-02-03 | Applied Materials, Inc. | Laser and plasma etch wafer dicing using UV-curable adhesive film |
US9048309B2 (en) | 2012-07-10 | 2015-06-02 | Applied Materials, Inc. | Uniform masking for wafer dicing using laser and plasma etch |
US8940619B2 (en) | 2012-07-13 | 2015-01-27 | Applied Materials, Inc. | Method of diced wafer transportation |
US8859397B2 (en) | 2012-07-13 | 2014-10-14 | Applied Materials, Inc. | Method of coating water soluble mask for laser scribing and plasma etch |
US9252057B2 (en) | 2012-10-17 | 2016-02-02 | Applied Materials, Inc. | Laser and plasma etch wafer dicing with partial pre-curing of UV release dicing tape for film frame wafer application |
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US9236305B2 (en) | 2013-01-25 | 2016-01-12 | Applied Materials, Inc. | Wafer dicing with etch chamber shield ring for film frame wafer applications |
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US9105710B2 (en) | 2013-08-30 | 2015-08-11 | Applied Materials, Inc. | Wafer dicing method for improving die packaging quality |
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US9041198B2 (en) | 2013-10-22 | 2015-05-26 | Applied Materials, Inc. | Maskless hybrid laser scribing and plasma etching wafer dicing process |
US9312177B2 (en) | 2013-12-06 | 2016-04-12 | Applied Materials, Inc. | Screen print mask for laser scribe and plasma etch wafer dicing process |
US9299614B2 (en) | 2013-12-10 | 2016-03-29 | Applied Materials, Inc. | Method and carrier for dicing a wafer |
US10109612B2 (en) * | 2013-12-13 | 2018-10-23 | Taiwan Semiconductor Manufacturing Company | Tools and systems for processing semiconductor devices, and methods of processing semiconductor devices |
US9293304B2 (en) | 2013-12-17 | 2016-03-22 | Applied Materials, Inc. | Plasma thermal shield for heat dissipation in plasma chamber |
US9018079B1 (en) | 2014-01-29 | 2015-04-28 | Applied Materials, Inc. | Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate reactive post mask-opening clean |
US9299611B2 (en) | 2014-01-29 | 2016-03-29 | Applied Materials, Inc. | Method of wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance |
US9236284B2 (en) | 2014-01-31 | 2016-01-12 | Applied Materials, Inc. | Cooled tape frame lift and low contact shadow ring for plasma heat isolation |
US8991329B1 (en) | 2014-01-31 | 2015-03-31 | Applied Materials, Inc. | Wafer coating |
US9275902B2 (en) | 2014-03-26 | 2016-03-01 | Applied Materials, Inc. | Dicing processes for thin wafers with bumps on wafer backside |
US9076860B1 (en) | 2014-04-04 | 2015-07-07 | Applied Materials, Inc. | Residue removal from singulated die sidewall |
US8975163B1 (en) | 2014-04-10 | 2015-03-10 | Applied Materials, Inc. | Laser-dominated laser scribing and plasma etch hybrid wafer dicing |
US8932939B1 (en) | 2014-04-14 | 2015-01-13 | Applied Materials, Inc. | Water soluble mask formation by dry film lamination |
US8912078B1 (en) | 2014-04-16 | 2014-12-16 | Applied Materials, Inc. | Dicing wafers having solder bumps on wafer backside |
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US11195756B2 (en) | 2014-09-19 | 2021-12-07 | Applied Materials, Inc. | Proximity contact cover ring for plasma dicing |
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US10692765B2 (en) | 2014-11-07 | 2020-06-23 | Applied Materials, Inc. | Transfer arm for film frame substrate handling during plasma singulation of wafers |
US9330977B1 (en) | 2015-01-05 | 2016-05-03 | Applied Materials, Inc. | Hybrid wafer dicing approach using a galvo scanner and linear stage hybrid motion laser scribing process and plasma etch process |
US9159624B1 (en) | 2015-01-05 | 2015-10-13 | Applied Materials, Inc. | Vacuum lamination of polymeric dry films for wafer dicing using hybrid laser scribing and plasma etch approach |
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Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4568632A (en) * | 1982-10-07 | 1986-02-04 | International Business Machines Corporation | Patterning of polyimide films with far ultraviolet light |
US4414059A (en) * | 1982-12-09 | 1983-11-08 | International Business Machines Corporation | Far UV patterning of resist materials |
US4490211A (en) * | 1984-01-24 | 1984-12-25 | International Business Machines Corporation | Laser induced chemical etching of metals with excimer lasers |
-
1985
- 1985-10-31 US US06/793,608 patent/US4684437A/en not_active Expired - Lifetime
-
1986
- 1986-07-29 JP JP61176870A patent/JPS6336531A/ja active Granted
- 1986-10-21 EP EP86114534A patent/EP0227903B1/de not_active Expired - Lifetime
- 1986-10-21 DE DE8686114534T patent/DE3683028D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS6336531A (ja) | 1988-02-17 |
EP0227903A3 (en) | 1988-11-23 |
JPH0528897B2 (de) | 1993-04-27 |
EP0227903B1 (de) | 1991-12-18 |
EP0227903A2 (de) | 1987-07-08 |
US4684437A (en) | 1987-08-04 |
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