DE3603050A1 - Semiconductor circuit arrangement - Google Patents

Abstract

It is intended to utilise the advantages of various power semiconductors for a semiconductor circuit arrangement for self-commutated thyristor converters, it being intended that no auxiliary voltage sources be required. This is achieved in that each thyristor (1 in Figure 1; 11, 13, 15 and 14, 16, 12 in Figure 2) is connected in series with a field-effect transistor (3 in Figure 1; and 32 in Figure 2) which has a low reverse breakdown voltage, between the terminals of a DC source, each series circuit being connected in parallel with a power semiconductor (2 in Figure 1; 21, 23, 25 and 24, 26, 22 in Figure 2) which can be switched off, and in that the thyristor is triggered and the field-effect transistor is switched on in order to switch the arrangement on, and, in order to switch the arrangement off after completion of the triggering pulse for the thyristor, the power semiconductor which can be switched off is triggered and the field-effect transistor is thereafter switched off, after which the power semiconductor which can be switched off is turned off once the thyristor turn-off time has elapsed. <IMAGE>

Description

The invention relates to a semiconductor circuit arrangement according to the preamble of the claim.

Circuit arrangements are known in which the advantageous Eigen different power semiconductors ties and be exploited.

In the references Nestler, J., Wrede, H .: "Power transistors in power converters "," Scientific reports AEG-TELEFUNKEN " 50 (1977) 1/2, pages 39 to 48 and Junge, G., Nestler, J., Wrede, H .: "Deletion of thyristors by means of power transistors in self led power converters "," etz-a "vol. 99 (1978) 11, pages 678 to 681 and in DE-OS 27 22 738 circuit arrangements are described, which consist of thyristors and power semiconductors that can be switched off. The thyristors are used for switching on and carrying current, which switches off baren power semiconductor for switching off the circuit arrangement.

Such a circuit arrangement is used, among other things. in DC position learn (Duo articulated bus, S-Bahn Berlin) and three-phase inverters (auxiliary company converter of locomotive 120 of the Deutsche Bundesbahn). At these circuit arrangements require auxiliary voltage sources, to switch off the current from the thyristors to the parallel ones  commutable power semiconductors and the thyristors to their provide safe deletion of defined negative reverse voltages to be able to.

Disadvantages of these circuit arrangements are the effort and performance requires the auxiliary power supplies.

Limiting chokes are also required to limit the currents, which are generated by the auxiliary voltage sources and via the return diodes build up during the closed season.

The object of the invention is to provide a circuit arrangement of the ge Specify the type mentioned, with the advantages of different types of performance semiconductors are used, but with no auxiliary voltage sources are more required.

According to the invention, this object is achieved by the Characteristics specified solved.

Low blocking field effect transistors have high blocking an extremely low forward voltage. The low blocking field effect transistor generates commutation when the circuit arrangement is switched off voltage with which the current from the main branch into the parallel quenching is commutated, which only has a half that can be switched off contains ladder.

Advantages of the solution according to the invention are

• - Elimination of the auxiliary voltage supplies and
• - Elimination of the commutation chokes.

The arrangement according to the invention is described in the following management example explained in more detail. Show it

Fig. 1 shows the basic arrangement according to the invention and

Fig. 2, their use in a three-phase inverter.

In Fig. 1, 1 denotes a thyristor which is in series with a low-blocking field-effect transistor 3 . A GTO thyristor 2 is connected in parallel with this series connection. The series connection is connected to terminals 4 and 5 , to which a direct current source is connected.

To switch on the arrangement, the thyristor 1 is ignited and the field effect transistor is simultaneously made conductive. .

To switch off the arrangement, the GTO thyristor 2 is ignited after termination of the firing pulse for the thyristor 1 and then the field effect transistor 2 is blocked. After the extinction time of thyristor 1 , the GTO thyrisotr 2 is switched off again.

In FIG. 2, a three-phase inverter is shown, which is fed from a DC power source 6. The thyristors of the bridge circuit shown are designated 11 , 12 , ... 16 . The thyristor 11 is in one branch, the thyristor 14 in the other branch of a pair of branches; The same applies to thyristors 13 and 16 and to thyristors 15 and 12 .

The thyristor 11 has a reverse current diode 41 , the thyristor 13 a reverse current diode 43, etc., connected in parallel.

The thyristors 11 , 13 , 15 are connected via a field effect transistor 31 to the positive pole, the thyristors 14 , 16 , 12 via a field effect transistor 32 to the negative pole of the DC voltage source 6 .

A GTO thyristor 21 is connected in parallel with the series connection of the thyristor 11 with the field effect transistor 31 . For these three components, the switching off and switching off takes place in the manner described with reference to FIG .

Parallel to the series connection of the thyristor 13 with the field effect transistor 31 is a GTO thyristor 23 . Also for these modules, the switching on and off takes place in the manner described with reference to FIG. 1; according to the mode of operation of an inverter, he follow the ignition inserts for the thyristors 11 and 13 at different times.

Finally, a GTO thyristor 25 is connected in parallel with the series connection of the thyristor 15 and the FET 31 ; the above applies accordingly for switching on and off.

Furthermore, the series circuit comprising the thyristor 14 and the FET 32 is a GTO thyristor 26 , the series circuit comprising the thyristor 16 and the FET 32 is a GTO thyristor 26 and the series circuit comprising the thyristor 12 and the FET 32 is a GTO thyristor 22 . For each of the three related components (thyristor 14 , FET 32 , GTO thyristor 24, etc.), the method of operation described with reference to FIG. 1 applies to switching on and off.

Claims (1)

Semiconductor circuit arrangement for self-guided thyristor converters, characterized in that each thyristor ( 1 in Fig. 1; 11 13 , 15 and 14, 16 , 12 in Fig. 2) in series with a low block the field effect transistor ( 3 in Fig. 1; 31 and 32 in Fig. 2) are connected between the poles of a direct current source, each series circuit having a power semiconductor which can be switched off ( 2 in Fig. 1; 21 , 23 , 25 and 24, 26 , 22 in Fig. 2) is connected in parallel , and that to turn on the arrangement of the thyristor is fired and the field effect transistor is made conductive and to turn off the arrangement after termination of the ignition pulse for the thyristor of the power semiconductor which can be turned off and then the field effect transistor is blocked, after which the turn-off of the power semiconductor after the extinguishing time of the thyristor is deleted.