DE3586175D1 - Photolithographisches verfahren. - Google Patents

Photolithographisches verfahren.

Info

Publication number: DE3586175D1
Authority: DE; Germany
Prior art keywords: photolithographic process; photolithographic
Prior art date: 1984-12-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE8585115764T

Other languages

English (en)

Other versions

DE3586175T2 (de

Inventor

Bruce Fredrick Griffing

Paul Richard West

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Shin Etsu MicroSi Inc

Original Assignee

MicroSi Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-12-20

Filing date

1985-12-11

Publication date

1992-07-09

1985-12-11 Application filed by MicroSi Inc filed Critical MicroSi Inc

1992-07-09 Application granted granted Critical

1992-07-09 Publication of DE3586175D1 publication Critical patent/DE3586175D1/de

1993-01-07 Publication of DE3586175T2 publication Critical patent/DE3586175T2/de

2005-12-12 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/151—Matting or other surface reflectivity altering material

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Architecture (AREA)
Structural Engineering (AREA)
Photosensitive Polymer And Photoresist Processing (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Materials For Photolithography (AREA)

DE8585115764T 1984-12-20 1985-12-11 Photolithographisches verfahren. Expired - Fee Related DE3586175T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US06/684,395 US4578344A (en)	1984-12-20	1984-12-20	Photolithographic method using a two-layer photoresist and photobleachable film

Publications (2)

Publication Number	Publication Date
DE3586175D1 true DE3586175D1 (de)	1992-07-09
DE3586175T2 DE3586175T2 (de)	1993-01-07

Family

ID=24747864

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8585115764T Expired - Fee Related DE3586175T2 (de)	1984-12-20	1985-12-11	Photolithographisches verfahren.

Country Status (6)

Country	Link
US (1)	US4578344A (de)
EP (1)	EP0187295B1 (de)
JP (1)	JPS61180242A (de)
KR (1)	KR920005771B1 (de)
DE (1)	DE3586175T2 (de)
MX (1)	MX166143B (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4623611A (en) *	1985-01-16	1986-11-18	General Electric Company	Photolithographic stripping method for removing contrast enhancement layer
US4672021A (en) *	1985-06-03	1987-06-09	Fairmount Chemical Company	Contrast enhancement layer composition with naphthoquinone diazide, indicator dye and polymeric binder
US4816380A (en) *	1986-06-27	1989-03-28	Texas Instruments Incorporated	Water soluble contrast enhancement layer method of forming resist image on semiconductor chip
US5002993A (en) *	1986-07-25	1991-03-26	Microsi, Inc.	Contrast enhancement layer compositions, alkylnitrones, and use
IE59915B1 (en) *	1986-07-25	1994-04-20	Microsi Inc	Contrast enhancement layer compositions, alkylnitrones, and use
US4863827A (en) *	1986-10-20	1989-09-05	American Hoechst Corporation	Postive working multi-level photoresist
MX170825B (es) *	1987-07-31	1993-09-20	Microsi Inc	Mezclas moldeables centrifugamente utiles para formar capas mejoradoras de contraste en la region ultravioleta profunda
JP2674058B2 (ja) *	1988-02-10	1997-11-05	日本電気株式会社	パターン形成方法
JPH0253058A (ja) *	1988-08-18	1990-02-22	Matsushita Electric Ind Co Ltd	パターン形成方法
CA2011927C (en) *	1989-06-02	1996-12-24	Alan Lee Sidman	Microlithographic method for producing thick, vertically-walled photoresist patterns
US5178978A (en) *	1990-09-06	1993-01-12	The United States Of America As Represented By The Secretary Of The Air Force	Fabricating integrated optics
WO1993007629A1 (en) *	1991-10-04	1993-04-15	Motorola, Inc.	Integrated deposited vertical resistor in a sequential multilayer substrate
JP2663815B2 (ja) *	1992-11-02	1997-10-15	信越化学工業株式会社	レジストパターン形成方法
US6294317B1 (en)	1999-07-14	2001-09-25	Xerox Corporation	Patterned photoresist structures having features with high aspect ratios and method of forming such structures
JP2001110101A (ja) *	1999-07-30	2001-04-20	Fujitsu Ltd	記録媒体とその製造方法
DE60043974D1 (de) *	1999-12-07	2010-04-22	Du Pont	Photoentfärbbare Verbindungen enthaltende, photopolymerisierbare Zusammensetzungen und ihre Verwendung in flexographischen Druckplatten
US20050079454A1 (en) *	2003-10-14	2005-04-14	Best Leroy E.	Contrast enhancement materials containing non-PFOS surfactants
US7897296B2 (en)	2004-09-30	2011-03-01	General Electric Company	Method for holographic storage
US20060078802A1 (en) *	2004-10-13	2006-04-13	Chan Kwok P	Holographic storage medium
US7432197B2 (en) *	2006-01-27	2008-10-07	Micron Technology, Inc.	Methods of patterning photoresist, and methods of forming semiconductor constructions
US7622246B2 (en) *	2006-09-22	2009-11-24	Massachusetts Institute Of Technology	Contrast enhancing layers
US8323866B2 (en) *	2008-07-08	2012-12-04	Massachusetts Institute Of Technology	Inorganic resist sensitizer
US8158338B2 (en)	2008-07-08	2012-04-17	Massachusetts Institute Of Technology	Resist sensitizer
CN102858884B (zh)	2010-09-22	2015-10-21	株式会社艾迪科	染料及着色感光性组合物
WO2013056238A2 (en) *	2011-10-14	2013-04-18	University Of Utah Research Foundation	Programmable photolithography
WO2014035203A1 (ko) *	2012-08-31	2014-03-06	주식회사 엘지화학	스티릴계 화합물, 상기 스티릴계 화합물을 포함하는 색재, 이를 포함하는 감광성 수지 조성물, 상기 감광성 수지 조성물로 제조된 감광재, 상기 감광재를 포함하는 컬러필터 및 상기 컬러필터를 포함하는 디스플레이 장치
US10095115B2 (en)	2016-09-02	2018-10-09	Globalfoundries Inc.	Forming edge etch protection using dual layer of positive-negative tone resists

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3925077A (en) *	1974-03-01	1975-12-09	Horizons Inc	Photoresist for holography and laser recording with bleachout dyes
GB1588417A (en) *	1977-03-15	1981-04-23	Agfa Gevaert	Photoresist materials
US4211834A (en) *	1977-12-30	1980-07-08	International Business Machines Corporation	Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
US4225661A (en) *	1978-05-10	1980-09-30	The Richardson Company	Photoreactive coating compositions and photomechanical plates produced therewith
US4362809A (en) *	1981-03-30	1982-12-07	Hewlett-Packard Company	Multilayer photoresist process utilizing an absorbant dye
US4413051A (en) *	1981-05-04	1983-11-01	Dynamics Research Corporation	Method for providing high resolution, highly defined, thick film patterns
IE56083B1 (en) *	1982-11-01	1991-04-10	Microsi Inc	Aryl nitrones
US4464458A (en) *	1982-12-30	1984-08-07	International Business Machines Corporation	Process for forming resist masks utilizing O-quinone diazide and pyrene
US4535053A (en) *	1984-06-11	1985-08-13	General Electric Company	Multilayer photoresist process utilizing cinnamic acid derivatives as absorbant dyes

1984
- 1984-12-20 US US06/684,395 patent/US4578344A/en not_active Expired - Lifetime
1985
- 1985-12-11 DE DE8585115764T patent/DE3586175T2/de not_active Expired - Fee Related
- 1985-12-11 EP EP19850115764 patent/EP0187295B1/de not_active Expired - Lifetime
- 1985-12-20 KR KR1019850009635A patent/KR920005771B1/ko not_active IP Right Cessation
- 1985-12-20 JP JP60285903A patent/JPS61180242A/ja active Granted
- 1985-12-20 MX MX001045A patent/MX166143B/es unknown

Also Published As

Publication number	Publication date
US4578344A (en)	1986-03-25
EP0187295A2 (de)	1986-07-16
EP0187295A3 (en)	1988-04-27
MX166143B (es)	1992-12-22
JPS61180242A (ja)	1986-08-12
KR920005771B1 (ko)	1992-07-18
DE3586175T2 (de)	1993-01-07
EP0187295B1 (de)	1992-06-03
KR860005259A (ko)	1986-07-21
JPH0468623B2 (de)	1992-11-02

Publication	Publication Date	Title
DE3586175D1 (de)	1992-07-09	Photolithographisches verfahren.
DE3576367D1 (de)	1990-04-12	Elektroformungsverfahren.
FI853313L (fi)	1985-08-29	Speciallins foer glasoegon.
FI841899A (fi)	1985-11-12	Bestrykningsanordning.
FI842889A0 (fi)	1984-07-18	Partikelsuspensioner foer immunoglutination.
FI842741L (fi)	1985-01-12	Litografiska tryckningsplaotar.
DE3576312D1 (de)	1990-04-12	Luftreifen.
KR870700614A (ko)	1987-12-30	-1-아릴-2-아실아미도-3-플루오로-1-프로판올의 제조방법
DE3483776D1 (de)	1991-01-31	Entemulsionierungsverfahren.
BR8506280A (pt)	1986-08-26	Carroceria
NO160222C (no)	1989-03-22	Hurtigkobling for verktoey.
DE3483862D1 (de)	1991-02-07	Mikrolithographisches verfahren.
FI854288A0 (fi)	1985-10-31	Bestrykningsanordning.
NO853376L (no)	1986-03-03	Broenn-testemetode.
DE3579802D1 (de)	1990-10-25	Kaskadenentwachsungsverfahren.
DE3784792D1 (de)	1993-04-22	Biochemisches verfahren.
FI850977L (fi)	1985-09-14	Metod att anvaenda kolbraennare.
ATE34061T1 (de)	1988-05-15	Kontinuierlicher mischprozess.
DE3575099D1 (de)	1990-02-08	Luftreifen.
FI842326A0 (fi)	1984-06-08	Hoegproduktiv klordioxidprocess.
FI851520L (fi)	1985-12-10	Anordning foer sammanpressning av en blaosfolieslang.
DE3584107D1 (de)	1991-10-24	Polyphosphazen-verfahren.
FI851689A0 (fi)	1985-04-29	Process foer framstaellning av kefalosporinfoereningar.
FI854369A0 (fi)	1985-11-06	Styranordning foer plasmagenerator.
ATE38377T1 (de)	1988-11-15	Hydromethylierungsverfahren.

Legal Events

Date	Code	Title	Description
1993-07-01	8364	No opposition during term of opposition
2004-10-21	8339	Ceased/non-payment of the annual fee