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DE3574529D1 - Heterouebergangs-transistoren. - Google Patents

Heterouebergangs-transistoren.

Info

Publication number
DE3574529D1
DE3574529D1 DE8585104227T DE3574529T DE3574529D1 DE 3574529 D1 DE3574529 D1 DE 3574529D1 DE 8585104227 T DE8585104227 T DE 8585104227T DE 3574529 T DE3574529 T DE 3574529T DE 3574529 D1 DE3574529 D1 DE 3574529D1
Authority
DE
Germany
Prior art keywords
history transition
transistors
transition transistors
history
transition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585104227T
Other languages
English (en)
Inventor
Sandip Tiwari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3574529D1 publication Critical patent/DE3574529D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/461—Inverted vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts
DE8585104227T 1984-05-11 1985-04-11 Heterouebergangs-transistoren. Expired - Lifetime DE3574529D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/609,406 US4586071A (en) 1984-05-11 1984-05-11 Heterostructure bipolar transistor

Publications (1)

Publication Number Publication Date
DE3574529D1 true DE3574529D1 (de) 1990-01-04

Family

ID=24440677

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585104227T Expired - Lifetime DE3574529D1 (de) 1984-05-11 1985-04-11 Heterouebergangs-transistoren.

Country Status (4)

Country Link
US (1) US4586071A (de)
EP (1) EP0164517B1 (de)
JP (1) JPH0732160B2 (de)
DE (1) DE3574529D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0626242B2 (ja) * 1983-12-05 1994-04-06 富士通株式会社 半導体集積回路装置
JPH0614536B2 (ja) * 1985-09-17 1994-02-23 株式会社東芝 バイポ−ラ集積回路
US4872040A (en) * 1987-04-23 1989-10-03 International Business Machines Corporation Self-aligned heterojunction transistor
US4833517A (en) * 1987-04-27 1989-05-23 International Business Machines Corporation Theta device with improved base contact
US4835580A (en) * 1987-04-30 1989-05-30 Texas Instruments Incorporated Schottky barrier diode and method
JP2619407B2 (ja) * 1987-08-24 1997-06-11 株式会社日立製作所 半導体装置の製造方法
US4821082A (en) * 1987-10-30 1989-04-11 International Business Machines Corporation Heterojunction bipolar transistor with substantially aligned energy levels
US4871686A (en) * 1988-03-28 1989-10-03 Motorola, Inc. Integrated Schottky diode and transistor
US4981807A (en) * 1988-10-31 1991-01-01 International Business Machines Corporation Process for fabricating complementary vertical transistor memory cell
US4939562A (en) * 1989-04-07 1990-07-03 Raytheon Company Heterojunction bipolar transistors and method of manufacture
JP2918275B2 (ja) * 1990-03-30 1999-07-12 株式会社東芝 半導体装置
JP3130545B2 (ja) * 1991-03-06 2001-01-31 株式会社東芝 半導体装置および半導体装置の製造方法
KR20070032824A (ko) * 2004-07-20 2007-03-22 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스 및 그 제조 방법
CN110752256B (zh) * 2019-10-22 2021-04-06 深圳第三代半导体研究院 一种碳化硅肖特基钳位晶体管及其制备方法
CN111081769B (zh) * 2019-12-17 2025-02-11 中证博芯（重庆）半导体有限公司 NPN型肖特基集电区AlGaN/GaN HBT器件及其制备方法
CN110797402B (zh) * 2019-12-17 2025-02-14 中证博芯（重庆）半导体有限公司 PNP型肖特基集电区AlGaN/GaN HBT器件及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780359A (en) * 1971-12-20 1973-12-18 Ibm Bipolar transistor with a heterojunction emitter and a method fabricating the same
JPS4943583A (de) * 1972-08-30 1974-04-24
US3938243A (en) * 1973-02-20 1976-02-17 Signetics Corporation Schottky barrier diode semiconductor structure and method
US3943554A (en) * 1973-07-30 1976-03-09 Signetics Corporation Threshold switching integrated circuit and method for forming the same
US4005469A (en) * 1975-06-20 1977-01-25 International Business Machines Corporation P-type-epitaxial-base transistor with base-collector Schottky diode clamp
JPS546777A (en) * 1977-06-17 1979-01-19 Nec Corp Field effect type transistor
US4379005A (en) * 1979-10-26 1983-04-05 International Business Machines Corporation Semiconductor device fabrication
JPS56133874A (en) * 1980-03-22 1981-10-20 Semiconductor Res Found Semiconductor device
JPS57166068A (en) * 1981-04-07 1982-10-13 Toshiba Corp Semiconductor device
JPS57176762A (en) * 1981-04-22 1982-10-30 Nec Corp Semiconductor device
JPS5821866A (ja) * 1981-07-31 1983-02-08 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPH0732160B2 (ja) 1995-04-10
EP0164517B1 (de) 1989-11-29
US4586071A (en) 1986-04-29
EP0164517A1 (de) 1985-12-18
JPS60241262A (ja) 1985-11-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee