DE339364C - Process for the production of selenium cells - Google Patents
Process for the production of selenium cellsInfo
- Publication number
- DE339364C DE339364C DENDAT339364D DE339364DD DE339364C DE 339364 C DE339364 C DE 339364C DE NDAT339364 D DENDAT339364 D DE NDAT339364D DE 339364D D DE339364D D DE 339364DD DE 339364 C DE339364 C DE 339364C
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- production
- cells
- selenium cells
- metal plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 16
- 229910052711 selenium Inorganic materials 0.000 title claims description 16
- 239000011669 selenium Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 238000000034 method Methods 0.000 title claims description 3
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000010445 mica Substances 0.000 claims description 5
- 229910052618 mica group Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910001651 emery Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Verfahren - zur Herstellung von Selenzellen. Die Erfindung betrifft Selenzellen, welche, wie die Figuren zeigen, aus zwei Scharen hochkant gestellter, kammartig ineinandergreifender Metallplättchen 1, 2 bestehen, die durch Glimmerplättchen 3 getrennt sind, und auf welche die Selenschicht 6 aufgetragen wird, wobei die mit den herausragenden Zuleitungsfahnen-aus einem Stück bestehenden Metallplättchen lose auf die Glimmerplättchen aufgelegt und die Fahnen in die Zuleitungsschienen 4., 5 eingespannt sind.Process - for the production of selenium cells. The invention relates to selenium cells, which, as the figures show, consist of two sets of upright, comb-like interlocking metal plates 1, 2, which are separated by mica plates 3 , and to which the selenium layer 6 is applied, the one with the protruding lead lugs a piece of existing metal plate loosely placed on the mica plate and the flags are clamped in the supply rails 4, 5.
Derartige Zellen lassen sich bei Verwendung an einem Metallplättchen, z. B. Goldfolie und Glimmer, ohne besondere Schwierigkeiten in solcher Kleinheit aufbauen, daß ein Selenfleck von verhältnismäßig kleinem Durchmesser (etwa i mm) genügt, um die bei Verwendung der Zelle für Lichttelephonie o. dgl. für hohe Reichweiten erforderliche Leitfähigkeit zu erzielen.Such cells can be used on a metal plate, z. B. gold foil and mica, with no particular difficulty in such smallness build up that a selenium spot of relatively small diameter (about i mm) is sufficient for the use of the cell for light telephony o. The like. For long ranges to achieve the required conductivity.
Eine Schwierigkeit bereitet jedoch das Auftragen des Selenüberzuges. Damit nämlich die Metallplättchen beim Auftragen des Selenüberzuges miteinander nicht in Berührung kommen, anderseits aber mit dem Selen in innige Berührung treten, muß das Gebilde auf der Seite, auf der das Selen aufgetragen w(rden soll, derart glatt abgeschliffen uik gegebenenfalls poliert sein, daß die Schleifflächen der Metall- und Glimmerplättchen genau in einer Ebene liegen, über die weder die einen noch die anderen herausragen dürfen. Ist aber die so gebildete Unterlage für das Selen sehr glatt, so läuft das im geschmolzenen Zustand aufgebrachte Selen auf ihr in Form von kleinen Tröpfchen zusammen, und es entstehen träge und unbrauchbare Zellen. Um ein gutes Ansprechen zu sichern, muß der Selenüberzug möglichst dünn und gleichmäßig sein. Dies erreicht man nach der Er-Endung dadurch, daß man die glatt abgeschliffene Stirnfläche der Plättchen mit feinem Schmirgel oder eincm feinen Sandstrahlgebläse aufrauht (mattiert) und erforderlichenfalls trocken abwischt, jedoch nicht kräftig reibt oder gar wäscht. Ist diese geraubte Oberfläche vorgewärmt, so zerfließt auf ihr das geschmolzene, aufgetragene Selen zu einer ganz dünnen Schicht und erstarrt auch in einer solchen, .womit ein sehr gutes Ansprechen erzielt wird.However, there is a difficulty in applying the selenium coating. So that the metal platelets with each other when applying the selenium coating do not come into contact, but on the other hand come into intimate contact with selenium, the structure on the side on which the selenium is to be applied must be like this smoothly sanded uik if necessary polished that the grinding surfaces of the Metal and mica platelets lie exactly in one plane over which neither one let the others stick out. But is the so-formed base for that Selenium is very smooth, so the molten selenium runs on it in the form of small droplets, and the result is sluggish and unusable Cells. In order to ensure a good response, the selenium coating must be as thin as possible and be even. After the Er-ending, this is achieved by the Smoothly ground end surface of the platelets with fine emery or one cm fine Sandblasting blower roughened (matted) and, if necessary, wiped dry, but do not rub vigorously or even wash. Is this stolen surface preheated, so the melted, applied selenium melts into a very thin layer on it and also solidifies in such a way that a very good response is achieved.
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE339364T |
Publications (1)
Publication Number | Publication Date |
---|---|
DE339364C true DE339364C (en) | 1921-07-22 |
Family
ID=6223554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DENDAT339364D Expired DE339364C (en) | Process for the production of selenium cells |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE339364C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE916084C (en) * | 1949-02-11 | 1954-08-02 | Siemens Ag | Electrically controllable semiconductor rectifier |
-
0
- DE DENDAT339364D patent/DE339364C/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE916084C (en) * | 1949-02-11 | 1954-08-02 | Siemens Ag | Electrically controllable semiconductor rectifier |
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