DE3311835A1 - Photoconductive recording element - Google Patents

Abstract

Photoconductive recording element having a base (substrate, backing) for a photoconductive recording element and an amorphous layer. The amorphous layer has a layer structure which comprises a first layer region composed of an amorphous material containing silicon atoms and germanium atoms and a second layer region composed of an amorphous material containing silicon atoms and exhibiting photoconductivity. The first and the second layer regions are provided consecutively, proceeding from the base side.

Description

Photoconductive Recording Element The invention relates to a photoconductive one Recording element resistant to electromagnetic waves such as light, including in the broadest sense UV rays, visible light, IR rays, and X-rays 8 rays are to be understood, is sensitive.

Photoconductive materials that make up photoconductive layers in Solid state image sensing devices in imaging members for electrophotographic Purposes in the field of image generation or in manuscript reading devices are, most of them high sensitivity, high S / N ratio 2 photocurrent (Ip) / dark current (Id)]. Spectral properties related to the spectral properties adapted to the electromagnetic waves to be used for irradiation, a quick response to light and a desired dark resistance value have and must not be harmful to health during use.

In addition, in a solid-state image sensing device, it is also necessary to that the residual image is easily treated or eliminated within a predetermined time can be. In the case of an imaging member for electrophotographic use, that into an electrophotographic one intended for use in an office as an office machine If the device is to be incorporated, it is particularly important that the imaging element is not harmful to health.

From the above-mentioned point of view, in recent times amorphous silicon (hereinafter referred to as a-Si) as a photoconductive material Noticed. For example, DE-OSS 27 46 967 and 28 55 718 disclose applications of a-Si for use in imaging members for electrophotographic purposes known, and from DE-OS 29 33 411 an application of a-Si for use known in a photoelectric conversion reading device.

The photoconductive recording elements with formed from a-Si, Photoconductive layers, however, must be considered under the current circumstances the achievement of a balance of the overall properties, including electrical and optical and photoconductive properties such as dark resistance, photosensitivity and the response to light as well as properties related to the influence of environmental conditions during use such as moisture resistance and also stability belong in the course of time to be further improved.

For example, in the case of application in an imaging element for electrophotographic purposes often observed that during its use a Residual potential remains if at the same time improvement in in terms of achieving higher photosensitivity and higher dark resistance are intended. When such a photoconductive recording element has a is used repeatedly for a long time, various difficulties arise, for example an accumulation of signs of fatigue from repeated use or the so-called Ghosting, causing residual images, or that Response to light gradually diminishes when the photoconductive recording element is used repeatedly at high speed.

Furthermore, a-Si has longer in the range of wavelengths are than the wavelengths on the side of the region of longer wavelengths in the Visible light range, an absorption coefficient that compared with the absorption coefficient on the side of the range of shorter wavelengths in the visible light range is relatively smaller, which is why the adjustment to the currently practically used semiconductor laser or in the case of application a currently available halogen lamp or fluorescent lamp as the light source in view of the disadvantage that the light on the side of the longer wavelengths cannot be used effectively, nor can some things be improved.

When the light that is irradiated is insufficient can be absorbed into the photoconductive layer, but the amount of light reaching the wearer is increased, also occur in the event that the Carrier itself has a high reflectivity with respect to that of the photoconductive Light penetrating through the layer, on multiple reflections attributable to interference, which is a cause of the generation of fuzzy Pictures can be.

This effect is greater if the irradiated area or the point of light, with which is irradiated, is made smaller in order to increase the resolution, and represents especially when a semiconductor laser is used as a light source Problem.

In designing a photoconductive recording element, one must as a result, along with the improvement of a-Si materials for themselves overcoming all of the problems mentioned above should be sought.

With a view to solving the above-mentioned problems, extensive investigations according to the invention with regard to the applicability and usefulness of a-Si as a photoconductive material for electrophotographic imaging members, Solid-state image sensing devices, reading devices, etc. are carried out. It was now surprisingly found that a photoconductive recording element with an amorphous layer which shows photoconductivity and made of a-Si, in particular made of an amorphous material containing hydrogen atoms in a matrix of silicon atoms (H) and / or halogen atoms (X), W hereinafter referred to as a-Si (H, X), i.e. H. made of so-called hydrogenated, amorphous silicon, halogenated, amorphous silicon or halogenated, hydrogenated, amorphous silicon, not only for the practical use shows extraordinarily good properties, but also the known photoconductive recording elements in essentially all respects is superior and especially excellent properties as photoconductive recording element for electrophotographic purposes shows when this photoconductive recording element is designed during its manufacture in such a way that that it has a particular structure as described below.

It is an object of the invention to provide a photoconductive recording element to provide the electrical, optical, and photoconductive properties which are constantly stable, essentially without limitation in any type of environment and in terms of photosensitive properties on the side of the longer wavelengths is excellent as well as excellent Resistance to light-fatigue shows without loss after repeated use any signs of deterioration are caused, and perfectly or is essentially free of observed residual potentials.

The invention is also intended to provide a photoconductive recording element that are made available in the entire range of visible light has a high photosensitivity in terms of adaptation to a semiconductor laser is particularly excellent and shows a quick response to light.

The invention is also intended to provide a photoconductive recording element are provided with excellent electrophotographic properties, that during the charge treatment carried out to generate electrostatic charges to an extent that is sufficient for a normal, electrophotographic Process can be carried out in a very effective manner when the photoconductive Recording element for use as an electrophotographic imaging element is provided, is capable of carrying or holding loads.

The invention is also intended to provide a photoconductive recording element for electrophotographic purposes can be made available with the easily pictures high quality that has high density, clear halftone, and high resolution have, can be produced.

The invention also aims to provide a photoconductive recording element with a high light sensitivity and a high S / N ratio be asked.

The object of the invention is characterized by that characterized in claim 1, photoconductive recording element dissolved.

The preferred embodiments of the invention are as follows explained in more detail with reference to the accompanying drawings.

Fig. 1 shows a schematic sectional view for explanatory purposes the layer structure of a preferred embodiment of the photoconductive according to the invention Recording element is used.

Figs. 2 to 10 are schematic sectional views showing the distribution states of germanium atoms in the amorphous layer will be explained.

Figure 11 is a schematic flow diagram showing that of the invention Applied device explained.

Figs. 12 through 27 are graphs showing the rate of change curves the gas flow rate ratios in the inventive examples demonstrate.

Fig. 28 is a schematic sectional view showing the layer structure a further preferred embodiment of the inventive, photoconductive Recording element explained.

Fig. 1 shows a schematic sectional view in which the layer structure a first embodiment of the photoconductive recording element according to the invention is explained.

The photoconductive recording element 100 shown in FIG. 1 has an amorphous layer on a support 101 for the photoconductive recording element 102 which has a free surface 105 as one of the end surfaces.

The amorphous layer 102 has a layer structure composed of a first layer region (G) 103, which is made from a-Si (H, X) c? \ Which contains germanium atoms denoted S, and a second layer region (S) 104 made of a-Si (H, X) and shows photoconductivity. The first layer region (G) 103 and the second Layer areas (S) 104 are consecutive from the carrier 101 side laminated. In the first layer region (G) 103, the germanium atoms are in the direction to the surface of the Carrier 101 substantially parallel Level included in a continuous and even distribution while they are contained in a distribution in the direction of the layer thickness, either can be uniform or uneven.

According to the invention are in the second layer area (S), which is on the first layer region (G) is provided, do not contain any germanium atoms. Through this, that an amorphous layer having such a layer structure is formed can be a photoconductive recording element can be obtained, which opposite the light with Wavelengths of the entire range from relatively shorter wavelengths to relatively longer wavelengths including visible light are excellent Shows photosensitivity.

Because the germanium atoms are continuous throughout the first layer region (G) are distributed, the light can also be on the side of the longer wavelengths, the in the case of using a semiconductor laser, etc. in the second layer region (S) cannot be absorbed to a substantial extent in the first layer region (C) are essentially completely absorbed, eliminating interference that occurs reflection from the surface of the support can be avoided can.

In the photoconductive recording element according to the invention, at the layer interface between the first layer region (G) and the second Layer area (S) sufficient chemical stability can be guaranteed, because all amorphous materials from which the individual layer areas are formed will contain silicon atoms as a common component.

When the distribution of germanium atoms in the direction of the layer thickness is made uneven, an improvement in the affinity between the first layer area (G) and the second layer area (S) can be achieved, by looking at the distribution of germanium atoms in the first layer region (G) so designed that germanium atoms distributed continuously in the entire layer area and that the distribution concentration C of germanium atoms is in the direction of Layer thickness is changed and from the carrier side in the direction of the second Layer area (S) decreases.

Figs. 2 to 10 show typical examples of the uneven Distribution of the germanium atoms contained in the first layer region (G) in the Direction of the layer thickness.

In Figs. 2 to 10, the axis of abscissa shows the distribution concentration C of the germanium atoms, while the ordinate axis the layer thickness of the first layer area (G). tag B shows the location of the end surface of the first layer area (G) on the carrier side, while tT is the position of the end surface of the first layer area (G) on the side opposite to the carrier side shows. That means that the Layer formation of the first layer region (G) containing germanium atoms from the tB-side proceeding towards the tT-side.

2 shows a first typical embodiment of the depth profile of germanium atoms contained in the first layer region (G) in the direction the layer thickness shown.

In the embodiment shown in Figure 2, the atoms are germanium in the first layer region (G) from the interface layer tB on which the surface, on which the first layer region (G) containing germanium atoms is to be formed, is in contact with the surface of the first layer region (G) up to the layer t1 in such a way that the distribution concentration C of the germanium atoms assumes a constant value C1 while the distribution concentration C of germanium atoms gradually from the position t1 to the interface position tT starting from the value C2 continuously decreases. The concentration of germanium atoms is maintained in the interface layer tT the value C3.

In the embodiment shown in FIG. 3, the distribution concentration increases C of the contained germanium atoms from the position t3 B to the position tT of the value Starting from C4 gradually and continuously until it reaches the value C5 in the position tT achieved.

In the case of Fig. 4, the distribution concentration becomes C of germanium atoms held at the constant value C6 from position tB to position t2 while the distribution concentration C is gradually continuous from the position t2 to the position tT decreases and in the position tT receives a value of essentially 0.

(Below a distribution concentration with a value of essentially 0 means a content below the detectable limit value).

In the case of Fig. 5, the distribution concentration of germanium atoms increases from position tB, where it has the value C8, to position tT> where it has a value from essentially 0 gradually and continuously decreases.

In the embodiment shown in Fig. 6, the distribution concentration becomes C of the germanium atoms between position B and position t3 on a constant The value Cg is held while it receives the value C10 in the position tT. Between the situation t3 and the location tT takes the distribution concentration C in the form of a function first Order from position t3 to position tT.

In the embodiment shown in FIG. 7, a depth profile is used formed such that the distribution concentration C from the position tB to the Location t4 assumes a constant value C11 while the distribution concentration C from position t4 to position tr in the form of a first order function of that Value C12 decreases up to the value C13.

In the embodiment shown in Fig. 8, the partition concentration increases C of the germanium atoms from position tB to position tT in the form of a function of the first Order from the value C14 to a value of essentially zero.

In Fig. 9, an embodiment is shown in which the distribution concentration C of the germanium atoms from position tB to position t5 in the form of a function of the first Order decreases from the value C15 to the value C16, while between the position t5 and the position tT is kept at the constant value C16.

In the embodiment shown in Fig. 10, the partition concentration has C of the germanium atoms in position B has the value C17. The distribution concentration C then gradually decreases from the value C17 at the beginning and in the Near the position t6 suddenly, until they reach the value C18 in position t6 achieved.

The concentration decreases between position t6 and position t7 suddenly at the beginning and then gradually until it reaches the value C19 in position t7, and the distribution concentration C of germanium atoms increases between position t7 and the position t8 decreases very gradually and reaches the value C20 in position t8.

The distribution concentration increases between position t8 and position tT C along a curve having the shape shown in Fig. 10 from the value C20 to to a value of essentially zero.

As above with a few typical examples of uneven Depth profiles of germanium atoms contained in the first layer region (G) in the direction of the layer thickness is described, the first layer area (G) in the case that the depth profile is contained in the first layer region (G) Germanium atoms is non-uniform in the direction of the layer thickness, suitably with such a depth profile of the germanium atoms that the first layer region (G) on the carrier side a proportion in which the distribution concentration C of the germanium atoms corresponds to an enrichment of the germanium atoms, and on the side of the interface tT a proportion in which the distribution concentration C of the germanium atoms is considerable is given a lower value than on the carrier side.

That is to say that the first layer region involved in building up the amorphous layer (G) in the case that it contains germanium atoms, those in the direction of the layer thickness form an uneven distribution, preferably one on the carrier side localized area (A), of germanium atoms in a relative contains higher concentration.

As will be explained with reference to the symbols shown in FIGS. 2 to 10, the localized area (A) may suitably be within 5 µm from the interface layer day B should be provided.

The above-mentioned localized area (A) can be associated with the entire Layer area (LT) that extends from the interface layer tB up to one Depth of 5 pm, can be made identical or alternatively part of the Form layer area (LT).

It can be done in an appropriate manner depending on the required Properties of the amorphous layer to be formed are determined whether the localized Area (A) can be designed as part of the layer area (LT) or the whole Shift area (LT) should occupy.

The localized area (A) may preferably according to such Stratification formed that the maximum value C of the distribution concentrations max of germanium atoms in the direction of the layer thickness (the values of the depth profile) suitably 1000 atomic ppm or more, preferably 5000 atomic ppm or more and in particular 1 x 10 atomic ppm or more.

That is, the amorphous layer containing germanium atoms according to the invention is preferably formed so that the maximum value C of the distribution concentration max within a layer thickness of 5 µm from the carrier page from (in the layer area with a thickness of 5 pm, calculated from day B) can.

In the context of the invention, the content of germanium atoms in the first layer area (G) can be determined in a suitable manner as desired, that the object of the invention is achieved in an effective manner, and the content of Germanium atoms in the first layer region (G) can suitably be 1 to 9.5 x 10 atomic pm, preferably 100 to 8 × 10 atomic ppm and in particular 500 to 7 × 10 5 Atomic ppm.

The photoconductive recording element according to the invention includes the layer thickness of the first layer region (C) and the layer thickness of the second Layer range (S) among the factors that contribute to an effective solution to the task of the Invention are important in the design of the photoconductive recording element sufficient attention should be paid to these layer thicknesses so that the formed photoconductive recording element imparted desired properties can be.

In the context of the invention, the layer thickness T B of the first layer region can be (G) suitably from 3.0 nm to 50 µm, preferably from 4.0 nm to 40 µm and especially 5.0 nm to 30 µm.

On the other hand, the layer thickness T of the second layer area (S) suitably 0.5 to 90 Sm, preferably 1 to 80 µm and especially 2 to 50 µm.

The sum of the above-mentioned layer thicknesses T and TB, namely (T + TB), can be used in the design the layers of the photoconductive Recording element suitably on a mutual organic basis Relationship between the properties required for both layer areas and the properties required for the entire amorphous layer in the desired Way to be set.

In the photoconductive recording element according to the invention, the numerical range for the above-mentioned sum (T + Tβ) is appropriate 1 to 100 µm, preferably 1 to 80 µm and in particular 2 to 50 µm.

In a preferred embodiment of the invention, the numerical Values for the individual above-mentioned layer thicknesses T8 and T are preferred chosen so that the relationship TB / T 5 1 is satisfied.

When choosing the numerical values for the layer thicknesses T B and T in the above-mentioned case, it is more preferred that the values of TB and T can be determined in such a way that the relationship TB / T <= 0.9 and in particular TB / T c 0.8 is met.

When the content of germanium atoms in the first layer region (G) within the scope of the invention is 1 × 10 atomic ppm or more, the first layer region becomes (G) suitably made with a very thin layer thickness T B, which suitably 30 µm or less, preferably 25 µm or less, and especially 20 µm or less is less.

Examples of halogen atoms (X) which may be in the first layer region (G) and the second layer area (S) that make up the amorphous layer educated is, can be incorporated, are within the scope of the invention fluorine, chlorine, bromine and Iodine, with fluorine and chlorine being particularly preferred.

The amount of hydrogen atoms (H) or the amount of halogen atoms (X) or the total amount of hydrogen and halogen atoms (H + X) present in the am Structure of the formed, amorphous layer involved, second layer area (S) should be contained, according to the invention can suitably 1 to 40 atom%, preferably 5 to 30 atom% and especially 5 to 25 atom%.

In the photoconductive recording element according to the invention, at least in the first layer area (G) a substance (C) for regulation the conduction properties are built in to the first layer area (G) desired To give line properties.

The substance (C) for regulating the conduction properties that to be contained in the first layer region (G) may be in a uniform and even distribution within the entire layer area or locally be contained in a part of the layer area.

When the substance (C) for regulating the conduction properties locally in part of the first layer region (G) of the photoconductive according to the invention Recording element is incorporated, the layer region (PN) which is the above mentioned substance (C), suitably as the end part layer region of the first Layer area (G) are provided.

Especially in the case that the aforementioned Shift area (PN) as end part layer area on the carrier side of the first layer area (G) is provided, an injection of charges with a certain polarity from the carrier into the amorphous layer can be effectively prevented by the kind and the content of the above-mentioned substance (C) contained in the layer area (PN) should be included, selects in a suitable manner.

In the photoconductive recording element according to the invention, the substance (C) capable of regulating the conduction properties in the first Layer area (G), which forms part of the amorphous layer, either uniformly in the entire area or locally, viewed in the direction of the layer thickness, to be built in. The above-mentioned substance (C) can alternatively also be used in the second layer area (S) provided on the first layer area (G), to be built in. It is also possible to use both of the above-mentioned substance (C) to be installed in the first layer area (G) as well as in the second layer area (S).

When the above-mentioned substance (C) in the second layer area (S) to be incorporated can be the type and content of the second layer area (S) substance to be incorporated (C) and the manner in which it is incorporated in a suitable manner Way depending on the type and content of the first layer area (G) built-in substance (C) and the way in which the first layer area (G) built-in substance (C) can be set.

When the above-mentioned substance (C) in the second layer area (S) is to be installed, the aforementioned substance (C) incorporated within the scope of the invention preferably within the layer area be the at least the contact interface with the first layer area (G) contains.

The above-mentioned substance (C) can be used uniformly in the present invention in the entire, second layer area (S) or alternatively evenly in one Part of the second layer region (S) may be included.

When the substance (C) for regulating the conduction properties in the first layer area (G) and the second layer area (S) it is preferred that the one containing the above-mentioned substance (C) Layer area in the first layer area (G) and that mentioned above Layer area containing substance (C) in the second layer area (S) with one another are in touch.

The one mentioned above to be incorporated in the first layer region (G) Substance (C) can be mixed with the substance to be incorporated into the second layer area (S) (C) either be identical or different in nature, and also the content of the Substance (C) in the individual layer areas can be the same or different.

In the context of the invention, however, it is preferred that the content of Substance (C) in the first layer region (G) made sufficiently larger is used when the same type of substance (C) is used in the individual layer areas is, or that in the desired, individual layer areas different types of substance (C) with different electrical.

Properties to be incorporated.

According to the invention, the fact that the substance (C) for the regulation the conduction properties at least in those involved in the structure of the amorphous layer, first layer area (G) is installed, the conductivity properties of the layer area (PN) can be freely regulated in the desired manner. As examples of such Substance (C) can mention the foreign matter used in the semiconductor field will. In the context of the invention, p-type impurities can affect the conduction properties p-type and n-type impurities give n-type conduction properties result, can be used.

Specifically, as p-type foreign matter belonging to the III group of Atoms belonging to the periodic table (the atoms of group III) such as B (boron), Al (aluminum), Ga (gallium), In (indium) and T1 (thallium) are mentioned, with B and Ga especially to be favoured.

As the n-type foreign matter can belong to group V of the periodic table belonging atoms (the atoms of group V) such as P (phosphorus), As (arsenic), Sb (antimony) and Bi (bismuth) can be used, with P and As being particularly preferred.

In the context of the invention, the content of the substance (C) in the layer range (PN) in a suitable manner depending on the required line properties of the layer area (PN) or in the case that the layer area (PN) is in the immediate vicinity Contact with the wearer is intended, depending on an organic relationship, for example the relationship to the properties at the contact interface with the carrier.

The content of the substance for the regulation of the conduction properties can also suitably take into account other layer areas which are described in direct contact with the layer area (PN) are provided, and the relationship to the properties at the Be of the contact interface with the others mentioned Layer areas are selected.

According to the invention, the content of the substance (C) can be used for regulation the conduction properties in the layer region (PN) is suitably 0.01 to 5 × 10 4 atomic ppm, preferably 0.5 to 1 × 10 4 atomic ppm and in particular 1 to 5 × 103 atomic ppm.

In the context of the invention, that as a content of the substance (C) in the layer region (PN) suitably 30 atomic ppm or more, preferably 50 atomic ppm or more and in particular 100 atomic ppm or more are selected as follows Advantages are achieved: In the event that the substance to be incorporated (C) is a foreign substance is of the p-type, the injection of electrons from the carrier side into the amorphous layer can be effectively prevented when the free surface the amorphous layer is subjected to a charge treatment with positive polarity or in the case that the above-mentioned substance (C) to be incorporated N-type foreign matter can inject positive holes from the support side forth in the amorphous layer can be effectively prevented when the free Surface of the amorphous layer of a charge treatment with negative polarity is subjected.

In the above-mentioned cases, the layer region (Z), i. H. the shift area without the previous The layer area mentioned above (PN), as described above, contain a substance (C) having a conductivity type with one of the conductivity type of the substance contained in the layer region (PN) (C) has different polarity, or the layer region (Z) can be a substance (C) having a conductivity type with the same polarity as that in the layer area (PN) has contained substance (C) in an amount much less than that practically used amount to be contained in the layer area (PN), contain.

In such a case, the content of substance (C) can be used for regulation of the conduction properties contained in the above-mentioned layer region (Z) should be, in a suitable manner as desired depending on the polarity and the content of the above-mentioned substance (C) contained in the above-mentioned Layer range (PN) is included, can be set and suitably 0.001 to 1000 atomic ppm, preferably 0.05 to 500 atomic ppm and in particular 0.1 to 200 atomic ppm be.

If within the scope of the invention in the layer area (PN) and the layer area (Z) the same type of substance (C) is contained, the content of the substance may be (C) in the layer region (Z) are preferably 30 atomic PPm or less.

According to the invention, in that in the amorphous layer a layer area, the one substance (C1) for regulating conduction properties with one conduction type contains a polarity, and a layer region containing a substance (C2) for the Regulation of the line properties with a line type the contains a different polarity, are intended to be in direct contact with one another, a so-called depletion layer can also be provided in the contact area.

That is, a depletion layer is provided in the amorphous layer can be made by, for example, a layer region (P) corresponding to the above contains mentioned p-type impurity, and a layer region (N) having the above contains mentioned foreign matter of the n-type, in such a way that it forms in the immediate Are in contact with each other and thereby form a so-called pn junction.

In the amorphous layer of the photoconductive recording element according to the invention Oxygen atoms are suitably incorporated in order to improve the Achievement of a higher light sensitivity and a higher dark resistance and further an improvement in the adhesion between the carrier and the amorphous Layer to achieve.

The oxygen atoms contained in the amorphous layer can either uniformly in the entire layer area of the amorphous layer or only locally be contained in a part of the layer region of the amorphous layer.

The oxygen atoms can move in the direction of the layer thickness of the amorphous Layer be distributed in such a way that its distribution concentration is similar to C (O) as in the distribution state described with reference to Figs of germanium atoms is either uniform or uneven.

That is, the distribution of oxygen atoms is similar to that of the case the germanium atoms can be explained with reference to FIGS. 2 to 10, when the distribution concentration C (O) is uneven in the direction of the layer thickness is.

In the context of the invention, the person involved in the construction of the amorphous layer is used Layer area (O) in the case that improvements in photosensitivity are mainly and the dark resistor are intended to be designed in such a way that it the occupies the entire layer area of the amorphous layer, while the layer area (O) is formed so as to have the end part layer area on the support side the amorphous layer occupies when mainly a reinforcement of the adhesion between the support and the amorphous layer is intended.

In the case mentioned in the first place, the content of oxygen atoms in the layer region (0) can be appropriately made relatively smaller so that a high photosensitivity is maintained while in the last place mentioned case, the content of oxygen atoms is suitably made relatively large can be so that a strengthening of the adhesion to the carrier is ensured.

For the simultaneous improvement of light sensitivity and dark resistance and the adhesion between the support and the amorphous layer can contain oxygen atoms be distributed in the layer area (0) in such a way that they are on the carrier side are distributed in a relatively higher concentration and on the side of the free Surface of the amorphous layer have a relatively lower concentration or that in the shift area on the side of the free surface the amorphous layer does not contain any oxygen atoms at all.

The content of oxygen atoms. contained in the layer area (0) should be, may be appropriate depending on the properties that are required for the layer area (0) itself, or in the case that the layer area (0) in direct contact with the wearer -st, depending on an organic relationship, for example the relationship to the properties the interface of contact with the wearer and aroerer. Relationships, to be chosen.

If another layer area -n direct contact with the Layer region (10) is to be formed, the content of oxygen atoms suitably also taking into account: g the properties of the other layer area the relationship to the properties at the interface with the other Evaluate shift area selected.

The content of oxygen atoms in the layer region (0) can be appropriately Way ifn dependence on the properties of the to be formed, photoconductive Recording element must be determined as desired and may suitably 0.001 to 50 atom%, preferably 0.002 to 40 atom% and especially 0.003 to 30 at%.

If the layer range (0, within the scope of the invention the entire range the amorphous layer or if it does not occupy the entire layer area of the amorphous layer, but a layer thickness has the is sufficiently large relative to the layer thickness T of the amorphous layer, is the The upper limit of the content of oxygen atoms in the layer region (0) is suitable sufficiently lower than the above-mentioned value.

That is, the upper limit of the content of oxygen atoms in the layer region (0) suitably 30 atomic or less, preferably 20 atomic% or less and in particular, 10 atom% or less, if the ratio of the layer thickness T0 of the layer area (0) for the layer thickness T of the amorphous layer has the value 2/5 or has a higher value.

The layer area (0) involved in the build-up of the amorphous layer can within the scope of the invention are suitably designed so that it is on the carrier side as described above, a localized area (B) containing oxygen atoms contains in a relatively higher concentration, and in this case can the adhesion between the support and the amorphous layer can be further improved.

As will be explained with reference to the symbols shown in FIGS. 2 to 10, the localized area (B) may suitably be within 5 µm from the interface layer day B should be provided.

The above-mentioned localized area (B) can be used in the context of Invention with the entire layer area (LT) that extends from the interface layer tB extends from calculated to a depth with a thickness of 5 µm, identical or alternatively form part of the layer region (LT).

It can be done in an appropriate manner depending on the required Properties of the amorphous layer to be formed are determined whether the localized Area (B) can be designed as part of the layer area (LT) or the whole Shift area (LT) should occupy.

The localized area (8) can preferably according to such Stratification formed that the maximum value Cmax of the distribution concentration of the oxygen atoms in the direction of the layer thickness is suitably 500 atomic ppm or more, preferably 800 atomic ppm or more and especially 1000 atomic ppm or can be more.

That is, the layer region (0) is suitably so formed may that the maximum value Cmax of the distribution concentration of oxygen atoms within a layer thickness of 5 μm from the carrier side (in the layer area with a Thickness of 5 Hm, calculated from t8).

The formation of a first layer area consisting of a-SiGe (H, X) (G) can according to the invention by a vacuum evaporation method using the Discharge phenomenon, for example after the glow discharge process, the sputtering process or the ion plating method. The basic procedure for the formation of the first layer region (G) consisting of a-SiGe (H, X) according to The glow discharge process consists, for example, in that a for supply Gaseous starting material capable of silicon atoms (Si) and a feed Gaseous starting material capable of germanium atoms (Ge), together with a gaseous starting material for the introduction of water material atoms (H) and / or a gaseous starting material for the introduction of halogen atoms (X), if necessary, in a deposition chamber, which is reduced to an inside Pressure can be brought in, and that in the deposition chamber a glow discharge is excited, causing on the surface of a carrier, the was placed in a predetermined position, a layer made of a-SiGe (H, X) is formed. For the formation of the layer by the sputtering process, in the case that the atomization is made using two plates in the form of one Si existing target and a target consisting of Ge or a plate in Form of a target containing a mixture of Si and Ge in an atmosphere from, for example, an inert gas such as Ar or He or in one of these gases based gas mixture is carried out, optionally a gas for the introduction of hydrogen atoms (H) and / or halogen atoms (X) into those used for atomization Deposition chamber are initiated.

To the gaseous to be used according to the invention for the supply of Si The starting material can be gaseous or gasifiable silicon hydrides as effective materials (Silanes) like SiH4, Si2H6, Si3H8 and Si4H1o belong. SiH4 and Si2H6 are in terms of their ease of use during layer formation and their efficiency particularly preferred with regard to the supply of Si.

As substances, the gaseous starting materials for the supply from Ge, gaseous or gasifiable germanium hydrides such as GeH4, Ge2H6, Ge3H8, Ge4H10, Ge5H12. Ge6H14, Ge7H16, Cle and GeH20 etc., the effective substances represent, mentioned will. In terms of ease of use during the film formation processes and the efficiency in terms of feeding of Ge, GeH4, Ge2H6 and Ge 3H8 are particularly preferred.

As effective gaseous starting materials for the introduction of Halogen atoms that are to be used according to the invention can be a large number of halogen compounds, including gaseous or gasifiable halogen compounds such as gaseous halogens, halides, Interhalogen compounds or halogen-substituted silane derivatives are mentioned will.

In the context of the invention, the use of gaseous or gasifiable, halogen atom-containing silane compounds, the silicon atoms and Containing halogen atoms as constituent atoms.

Typical examples of halogen compounds according to the invention are preferably used, gaseous halogens such as fluorine, chlorine, bromine or iodine and interhalogen compounds such as BrF, C1F, C1F3, BrF5, BrF3, JF3, JF7, JC1 and JBr belong.

Silicon compounds containing halogen atoms, i. H. as halogen-substituted Silane derivatives, preferably silicon halides such as SiF4, Si2F6, SiC14 and SiBr4 can be used.

When the photoconductive recording element according to the invention after the glow discharge method using such a halogen atom Silicon compound to be formed can be made on a specific support a-SiGe containing halogen atoms, existing, first layer region (G) is formed will, without being capable of supplying Si, gaseous Starting material together with a gaseous starting material for the feed a gaseous silicon hydride is used by Ge.

The basic procedure for the formation of a halogen atom containing, first layer region (G) after the glow discharge process consists for example in that a gaseous silicon halide as a gaseous starting material for the supply of Si, a germanium hydride as a gaseous starting material for the Supplying Ge and a gas such as Ar, H2 or He in a predetermined mixing ratio and into one at predetermined gas flow rates to form the first Layer area (G) serving deposition chamber are introduced and that in the Deposition chamber a glow discharge is excited to create a plasma atmosphere to form these gases, creating the first layer area on a specific support (G) can be formed.

For easier regulation of the proportion of hydrogen atoms introduced can these gases also to a desired extent with a gaseous, hydrogen atom containing silicon compound are mixed.

The individual gases can not only appear as individual species, but can also be used in the form of a mixture of more than one species.

For the formation of a first layer area consisting of a-SiGe (H, X) (G) by the reactive sputtering method or the ion plating method for example, in the case of the atomization method, atomization using of two plates in Shape of a Si target and a Ge target or using a plate in the form of a target containing Si and Ge in FIG a certain gas plasma atmosphere. In the case of the ion plating method become polycrystalline silicon or single crystal silicon and polycrystalline Germanium or single crystal germanium as evaporation sources, each in a small evaporation boat and these evaporation sources are heated by resistance heating method or the electron beam method, the resulting flying, evaporated Product is enabled to pass through the gas plasma atmosphere.

During this procedure, halogen atoms can be introduced into the layer formed in the sputtering process or the ion plating process a gaseous halogen compound or a silicon compound containing halogen atoms, as described above, are introduced into the deposition chamber, a plasma atmosphere being formed from this gas.

For the introduction of hydrogen atoms can also be a gaseous one Starting material for the introduction of hydrogen atoms such as H2 or one of the gaseous silanes and / or germanium hydrides mentioned above in the deposition chamber can be introduced, and in the deposition chamber a Plasma atmosphere can be formed from this gas.

According to the invention, as a gaseous starting material for the introduction of halogen atoms, the halogen compounds or the halogen-containing silicon compounds, those mentioned above effectively can be used. It is also possible to use a gaseous or gasifiable halide, the hydrogen atoms as one of the types of atoms involved in the structure, for example a hydrogen halide like HF, HC1, HBr or HJ, a halogen-substituted silicon hydride like SiH2F2, SiH2J2 ' SiH2C12 'SiHCl3, SiH2Br2 or SiHBr3, a halogen-substituted germanium hydride like CeHF3, GeH2F2, GeH3F, GeHCl3, GeH2C12, GeH3Cl, GeHBr3, GeH2Br2, GeH3Br, GeHJ3, GeH2J2 or GeH3J or a gaseous or gasifiable germanium halide such as GeF4, GeCl4, GeBr4, GeJ4, GeF2, GeCl2, GeBr2 or GeJ2 as an effective starting material to use for the formation of a first layer region (G) of the amorphous layer.

Of these substances can be the halides, the hydrogen atoms and are capable of doing so, during the formation of the first layer region (G) hydrogen atoms simultaneously with the introduction of halogen atoms into the layer introduce those regarding the regulation of electrical or photoelectric Properties are very effective, preferably as a starting material for introduction of halogen atoms are used.

For the incorporation of hydrogen atoms into the structure of the first layer area (G) In contrast to the procedure described above, it can be ensured that that in a deposition chamber in which a discharge is excited, H2 or a Silicon hydride such as SiH4, Si2H6, Si3H8 or Si4H10 and germanium or a germanium compound for the supply of Ge or alternatively a germanium hydride such as GeH4, Ge2H6, Ge3H8> Ge4H10, Ge5H12 Ge6H14, Ge7H16, Ge8H18 or Ge9H20 and silicon or a silicon compound for the supply of Si are present together.

In preferred embodiments of the invention, the amount of Hydrogen atoms (H) or halogen atoms (X) that are involved in the structure of the Amorphous layer involved, first layer area (G) are incorporated, or the Total amount of hydrogen atoms and halogen atoms, (H + X), suitably 0.01 up to 40 atom%, preferably 0.05 to 30 atom% and in particular 0.1 to 25 atom% be.

For regulating the amounts of hydrogen atoms (H) and / or the Halogen atoms (X) in the first layer region (G) can, for example, be the carrier temperature and / or the amounts of raw materials to be introduced into the deposition device for the incorporation of hydrogen atoms (H) or halogen atoms (X) or the discharge power be regulated.

According to the invention, for the formation of the a-Si (H, X), second layer region (S) the starting materials (II) for the formation of the second Layer area (S), d. H. Starting materials obtained from those described above Starting materials (I) for the formation of the first layer region (G) with the exception of the starting material used as a gaseous starting material for the supply of Ge were selected using the same procedure and under the same conditions as in the case of forming the first layer region (G).

That is, the formation of a second layer region consisting of a-Si (H, X) (S) in the context of the invention using the vacuum evaporation method the discharge phenomenon, for example after Glow discharge process, the sputtering method or the ion plating method. The basic procedure for the formation of the a-Si (H, X), second layer region (S) after the glow discharge process consists for example in that a gaseous starting material capable of supplying silicon atoms (Si), together with a gaseous starting material for the introduction of hydrogen atoms and / or halogen atoms, if necessary, into the deposition chamber, the inside can be brought to a reduced pressure, initiated and that a glow discharge is excited in the deposition chamber, whereby on the Surface of a support placed in a predetermined position, an a-Si (H, X) containing layer is formed. For the formation of the layer by the sputtering process can in the case that the sputtering using one made of Si Targets in an atmosphere of, for example, an inert gas such as Ar or He or is carried out in a gas mixture based on these gases, a gas for the introduction of hydrogen atoms (H) and / or halogen atoms (X) into the for atomization serving deposition chamber are initiated.

For the formation of a layer area (PN) that contains a substance (C) for the regulation of the conduction properties, for example group III atoms or the group V, by introducing the substance (C) into the structure of the A starting material can be used in the layer region involved in the structure of the amorphous layer for introduction of Group III atoms or a starting material for introduction of group V atoms in the gaseous state together with other starting materials for the formation of the amorphous Layer in the deposition chamber be initiated.

As such starting materials for the introduction of the atoms of the group III compounds can preferably be used that are gaseous or at least are gasifiable under the layer formation conditions.

As typical examples of such starting materials for introduction of atoms of group III can boron hydrides such as B2H6, B4H10, B5H9, B5H11 'B6H10, B6H12 and B6H14 and boron halides such as BF3, BC13 and BBr3, the starting materials for the introduction of boron atoms. Besides, can also for example AlC13, GaCl3, Ga (CH3) 3, InC13 or T1Cl3 as starting materials used for the introduction of Group III atoms.

As a starting material for the introduction of Group V atoms, the According to the invention can be used effectively, phosphorus hydrides like PH3 and P2H4 and phosphorus halides like PH4J, PF3, PF5, PC1 PCl5, PBr3, PBr5 and PJ3, which are starting materials for the introduction of phosphorus atoms, be mentioned. As effective starting materials for the introduction of atoms of the Group V can also, for example, also AsH3, AsF3, AsCl3, AsBr3, AsF5, SbH3, SbF3, SbF5, SbCl3, SbCl5, SiH3, SiCl3 and BiBr3, etc. can be mentioned.

For the formation of the layer area containing oxygen atoms (0) a starting material may be present in the amorphous layer during the formation of the layer for the introduction of oxygen atoms together with the above-mentioned starting material used for the formation of the amorphous layer and built into the layer, while regulating the amounts of these raw materials. if for the formation of the layer region (0), the glow discharge method can be applied shall be added to the starting material obtained in the desired manner from the above the above-mentioned starting materials were selected for the formation of the amorphous layer, a raw material for introducing oxygen atoms can be added. as Such a starting material for the introduction of oxygen atoms can be the Most gaseous or gasifiable substances are used that are considered to be building up involved atoms contain at least oxygen atoms.

For example, a mixture of a gaseous starting material, which contains silicon atoms (Si) as atoms involved in the structure, a gaseous one Starting material, which contains oxygen atoms (O) as atoms involved in the structure, and optionally a gaseous starting material containing hydrogen atoms (H) and / or contains halogen atoms (X) as constituent atoms, in a desired one Mixing ratio, a mixture of a gaseous starting material, the silicon atoms Contains (Si) as atoms involved in the structure, and a gaseous starting material, the oxygen atoms (O) and hydrogen atoms (H) as atoms involved in the structure contains, also in a desired mixing ratio, or a mixture from a gaseous starting material, the silicon atoms (Si) as involved in the structure Contains atoms, and a gaseous starting material, the silicon atoms (Si), oxygen atoms (0) and hydrogen atoms (H) as the atoms involved in the structure will.

Alternatively, a mixture of a gaseous starting material, the silicon atom (Si) and water material atoms (H) than in the structure Containing atoms involved, and a gaseous starting material, the oxygen atoms (0) as the atoms involved in the structure.

In detail, for example, oxygen (° 2), ozone (03), nitrogen monoxide (NO), nitrogen dioxide (wo2), nitrous oxide (N20), nitrous oxide (N203), Dinitrogen tetroxide (N204), nitrous pentoxide (N2O5) and nitrogen trioxide (NO 3) and lower siloxanes, which are silicon atoms (Si), Contain oxygen atoms (0) and hydrogen atoms (H), for example disiloxane H3SiOSiH3 and trisiloxane H3SiOSi20SiH3, may be mentioned.

For the formation of the layer area containing oxygen atoms (0) after the sputtering process, a single crystal or polycrystalline Si wafer or Si02 disk or a disk in which a mixture of Si and SiO2 is contained is, can be used, and an atomization of these disks can be in different Gas atmospheres are carried out.

For example, if a Si wafer is used as a target, can a gaseous starting material for the introduction of oxygen atoms, which optionally can be diluted with a diluting gas, optionally together with a gaseous starting material for the introduction of hydrogen atoms and / or halogen atoms to form a gas plasma from these gases in a deposition chamber used for atomization, in which a sputtering can be carried out with the aforementioned Si wafer can be initiated.

Alternatively, the sputtering can be carried out using separate targets made of Si and SiO2 or using a plate-shaped target in which a Mixture of Si and SiO2 is contained in an atmosphere of a diluting gas as a gas for atomization or in a gaseous atmosphere as involved in the construction At least hydrogen atoms (H) and / or halogen atoms (X) are carried out will.

As a gaseous starting material for the introduction of oxygen atoms can also in the case of atomization, the gaseous starting materials, which in the Connection with the glow discharge method described above as examples mentioned can be used effectively.

If within the scope of the invention during the formation of the amorphous layer a layer region (0) containing oxygen atoms is formed, the layer region may (0) representing a desired distribution state (a desired depth profile) of the Has oxygen atoms in the direction of the layer thickness, which by change the distribution concentration C (O) of the oxygen atoms contained in the layer region (0) was formed, in the case of the glow discharge, formed by making a gaseous Starting material for the introduction of oxygen atoms into a deposition chamber initiates while the gas flow rate of this gaseous starting material is appropriately changed according to a desired curve of the rate of change will.

For example, the opening of a particular needle valve that is provided in the course of the gas flow channel system by a manual method or by another commonly used method, for example by a Method using an external motor, etc. gradually changed will. During this procedure, the rate of change of the gas The flow rate does not necessarily have to be linear, but the gas flow rate can be in accordance with a curve of the rate of change that was previously for example designed by means of a microcomputer, can be regulated so a desired salary curve is obtained.

When the layer region (0) is formed by the sputtering method may be a first method for establishing a desired distribution state (Depth profile) of the oxygen atoms in the direction of the layer thickness due to change the distribution concentration C (0) of the oxygen atoms in the direction of the layer thickness similar to the case of the glow discharge process can be carried out by one a starting material for the introduction of oxygen atoms in the gaseous state begins and the gas flow rate of this gas in a suitable manner Desire changed when introduced into the deposition chamber.

Second, such a depth profile can also be formed by the composition of the target used for sputtering is changed beforehand. For example, if a target that consists of a mixture of Si and SiO2, should be used, the mixing ratio of Si to Si02 can be in the direction the layer thickness of the target can be changed.

The carrier to be used according to the invention can either be electrical be conductive or insulating. Metals such as NiCr, stainless steel, Al, Cr, Mo, Au, Nb, Ta, V, Ti, Pt and Pd or alloys be mentioned of it.

In general, foils or plates can be used as insulating supports Synthetic resins, including polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, Include polyvinyl chloride, polyvinylidene chloride, polystyrene and polyamide, glasses, ceramic fabrics, papers and other materials can be used.

These insulating supports should preferably have at least one surface have which has been subjected to a treatment by which they are electrically conductive has been made, and other layers are suitably provided on the side, which has been made electrically conductive by such a treatment.

For example, a glass can be made electrically conductive by on the glass a thin film of NiCr, Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt, Pd, In203, SnO2 or ITO (In203 + SnO2) is formed. Alternatively, the surface a synthetic resin film such as a polyester film by vacuum evaporation, electron beam deposition or atomization of a metal such as NiCr, Al, Ag, Pb, Zn, Ni, Au, Cr, Mo, Ir, Nb, Ta, V, Ti or Pt or electrically conductive by lamination with such a metal be made.

The carrier can be formed in any shape, for example in the form of a cylinder, a band or a plate or in other shapes, and its shape can be determined as desired.

When the photoconductive recorder shown in Fig. 1 element 100 used, for example, as an imaging member for electrophotographic purposes it can be used in a continuous, high-speed manner carried out copying process suitably in the form of an endless belt or of a cylinder.

The support may have a thickness which is so determined as appropriate becomes that a desired photoconductive recording element can be formed.

If the photoconductive recording element must be flexible, then the carrier with the restriction that he can exercise his function as a carrier must be made as thin as possible. In such a case, however, the wearer has generally taking into account its manufacture and handling as well as its mechanical strength a thickness of 10 µm or greater.

28 is a schematic representation of the layer structure of a another preferred embodiment of the photoconductive recording element according to the invention.

The photoconductive recording element 2800 shown in FIG has a first on a support 2801 for the photoconductive recording element amorphous layer (I) 2802 and a second amorphous layer (II) 2805 with a free one Surface 2806 as one of the end surfaces.

The photoconductive recording element 2800 shown in FIG has the same layer structure as the photoconductive recording element shown in FIG. 1, but with the difference that on a first amorphous layer (I) 2802 a second amorphous layer (II) 2805 is provided.

That is, the photoconductive recording element 2800 has a first amorphous layer 2802 has the same structure as the amorphous layer 102 in the photoconductive recording element 100 shown in FIG.

The second amorphous layer (II) 2805, which in the case of the one shown in FIG. 28, photoconductive recording element 2800 on the first amorphous layer (I) 2802 is formed, has a free surface and is mainly intended to the object of the invention in terms of moisture resistance, properties in continuous and repeated use, the dielectric strength, the properties related to the influence of environmental conditions during the Application and shelf life to solve.

In the context of the invention, the amorphous materials have the first amorphous layer (I) 2802 and the second amorphous layer (II) 2805 form silicon atoms as a common component, creating at the interface of these amorphous layers sufficient chemical stability is guaranteed.

The second amorphous layer (II) consists of an amorphous material, the silicon atom (Si), carbon atoms (C) and optionally hydrogen atoms Contains (H) and / or halogen atoms (X), hereinafter referred to as "a- (SixCl X) y (H, X) 1 y", where O <x, y <1 denotes.

The second amorphous layer (II) consisting of a- (SixC1-x) y (H, X) 1-y can after the glow discharge process, the sputtering process, the ion implantation process travel, the ion plating method, the electron beam method and other methods are formed.

These manufacturing methods may suitably depend on on various factors such as the manufacturing conditions, the extent of the load through the capital investment for facilities, the manufacturing scale, the desired Properties required for the photoconductive recording element to be manufactured are selected, etc.

The glow discharge method or the sputtering method may preferably be used be applied because in this case the advantages are obtained that the manufacturing conditions for the production of photoconductive recording elements with desired properties can be regulated comparatively easily and in the second to be produced amorphous layer (II) silicon atoms and carbon atoms, optionally together with hydrogen atoms or halogen atoms, can be introduced in a simple manner.

In addition, the second amorphous layer (II) can be used within the scope of the invention can be formed by the glow discharge method and the sputtering method can be used in combination in the same device system.

For the formation of the second amorphous layer (II) by the glow discharge process can be used in a vacuum vapor deposition chamber, in which a carrier was introduced, gaseous starting materials for the formation of a- (Si Cl-x y (H, X) which are optionally in a predetermined mixing ratio with a diluting gas are mixed in and there will be a glow discharge encouraged to get out of the initiated Gas to form a gas plasma and thereby on the first amorphous layer (1) already on the above mentioned carrier was formed to deposit a- (Si xC X) y (H, X) l y.

In the context of the invention, as gaseous starting materials most substances are used for the formation of a- (Si: Cl ~ x) y (H, X) y, at least one selected from Si, C, H and X as atoms involved in the structure Contain atomic type and which are gaseous or gasifiable substances Substances in gasified form.

When a gaseous starting material considered to be involved in its construction Atoms, d. H. as a type of atom selected from Si, C, H and X, contains Si atoms, is used, for example, a mixture of a gaseous starting material, which contains Si atoms as atoms involved in the structure, a gaseous starting material, which contains carbon atoms as atoms involved in the structure, and possibly a gaseous one Starting material containing hydrogen atoms as the atoms involved in the structure, and a gaseous starting material, which contains X atoms as atoms involved in the structure, can be used in a desired mixing ratio, or it can also be a Mixture of a gaseous starting material, the Si atoms as involved in the structure Contains atoms, and a gaseous starting material that contains C and H atoms as am Structure contains atoms involved, and / or a gaseous starting material that Contains C and X atoms as atoms involved in the structure, also in a desired one Mixing ratio can be used. It is also possible to have a mix of one gaseous starting material, the Si atoms as atoms involved in the structure contains, and a gas containing Si, C and H atoms as constituent atoms, or a gas that contains Si, C and X atoms as atoms involved in the structure.

Alternatively, a mixture of a gaseous one can also be used Starting material, which contains Si and H atoms as atoms involved in the structure, with a gaseous starting material that contains carbon atoms as atoms involved in the structure, or a mixture of a gaseous starting material containing Si and X atoms as the atoms involved in the structure, with a gaseous starting material, that contains carbon atoms as atoms involved in the structure, possible.

Preferred halogen atoms (X) in the context of the invention in the second Amorphous layer (II) to be included are F, C1, Br and J, where F and C1 are particularly preferred.

As compounds within the scope of the invention in an effective manner than gaseous starting materials for the formation of the second amorphous layer (II) can be used, there can be mentioned the compounds that can be used at normal temperature and normal pressure are gaseous or can be easily gasified.

As gaseous starting materials, which in the context of the invention in effectively used for the formation of the second amorphous layer (II), can e.g. B. gaseous silicon hydrides, the Si and atoms involved in the structure Contain H, for example silanes such as SiH4, Si2H6, 5i3H8 and Si4H1o, compounds, which contain C and H as atoms involved in the structure, for example saturated Coal hydrogen with 1 to 5 carbon atoms, ethylenic Hydrocarbons with 2 to 5 carbon atoms and acetylenic hydrocarbons with 2 to 4 carbon atoms, simple halogen substances, hydrogen halides, Interhalogen compounds, silicon halides and halogen-substituted silicon hydrides be mentioned.

In detail, methane (CH4), Ethane (C2H6), propane (C3H8), n-butane (n-C4H1O) and pentane (C5H12), as ethylenic Hydrocarbons ethylene (C2H4), propylene (C3H6), butene-1 (C4H8), butene-2 (C4H8), Isobutylene (C4H8) and pentene (C5H10), as acetylenic hydrocarbons acetylene (C2H2), methylacetylene (C3H4) and butyne (C4H6), gaseous as simple halogen substances Halogens such as fluorine, chlorine, bromine and iodine, as hydrogen halides HF, HJ, HC1 and HBr, as interhalogen compounds BrF, C1F, ClF3, ClF5, BrF5, BrF3, JF7, JF5, JC1 and JBr, as silicon halides SiF4, Si2F6, SiCl4, SiC13Br, SiC12Br2, SiClBr3, SiC13J and SiBr4, as halogen-substituted silicon hydrides SiH2F2, SiH2Cl2, SiHCl3, SiH3Cl, SiH3Br, SiH2Br2 and SiHBr3 and, as silicon hydrides, silanes such as SiH4, Si2H6 and Si4H10 can be mentioned.

In addition to these materials, effective materials can also be used halogen-substituted, paraffinic hydrocarbons such as CF4, CCl4, CBr4, CHF3, CH2F2, CH3F, CH3C1, CH3Br, CH3J and C2H5C1, fluorinated sulfur compounds such as 5F4 and 5F6, alkylsilanes such as Si (CH3) 4 and Si (C2H5) 4 and halogen-containing alkylsilanes such as SiCl (CH3) 3, SiC12 (CH3) 2 and SiC13CH3 can be used.

These materials for the formation of the second amorphous layer (II) can be chosen in the desired manner and during the formation of the second amorphous Layer (II) are used so that in the second amorphous layer to be formed (II) silicon atoms, carbon atoms and halogen atoms and optionally hydrogen atoms may be contained in a desired composition ratio.

For example, Si (CH3) 4, with which silicon atoms, Carbon atoms and hydrogen atoms can be incorporated and a layer with desired properties can be formed, along with a material for the incorporation of halogen atoms such as SiHGl3, SiH2Cl2, SiC14 or SiH3Cl in a particular Mixing ratio in the gaseous state in one to form the second amorphous Layer (II) serving device in which a glow discharge is excited, initiated , whereby a second amorphous layer consisting of a- (Si Cl-x y (C1 + H) l-y) (II) is formed.

For the formation of the second amorphous layer (II) by the sputtering process a single crystal or polycrystalline Si disk or C disk is used as the target or a disk in which a mixture of Si and C is contained is used and in an atmosphere of different gases, which, if desired, can be used as a structure atoms involved contain halogen atoms and / or hydrogen atoms, an atomization subjected.

For example, if a Si wafer is used as a target, can a gaseous starting material for the introduction of C and H and / or X, which, if desired, can be diluted with a diluting gas, be introduced into a deposition chamber serving for atomization in order to obtain in the Deposition chamber to generate a gas plasma and a sputtering with the Si wafer perform.

Alternatively, Si and C can be used as separate targets or can be a plate-shaped Target made of a mixture of Si and C are used, and the sputtering is carried out carried out in a gas atmosphere which, if necessary, hydrogen atoms and / or Contains halogen atoms. As a gaseous starting material for the introduction of C, In the case of atomization, H and X can also be the materials for the formation of the second amorphous layer (II) related to that described above Glow discharge processes mentioned as effective gases can be used.

As a diluting gas, according to the invention in the formation of the second amorphous layer (11) by the glow discharge process or the sputtering process is to be used, noble gases such as He, Ne or Ar can preferably be mentioned.

The second amorphous layer (II) of the recording element according to the invention should be carefully formed so that its the required properties exactly can be awarded in the manner desired.

That is to say, that a substance which is used as the atoms Si, C and, if necessary, contains H and / or X, depending on the manufacturing conditions Can take various forms from crystalline to amorphous, electrical Can assume properties that vary from the properties of a conductor the Properties of a semiconductor range up to the properties of an insulator, and photoconductive properties can assume that of the properties of a photoconductive to the properties of a non-photoconductive substance range.

According to the invention, the production conditions are consequently shown in exactly selected in the desired manner, so that a- (SixC1-x) y (H, X) 1-y, which is the desired, has properties depending on the application, can be formed. if the second amorphous layer (II), for example, mainly to improve the Dielectric strength is provided, a- (SiXcl ~ x) y (Htx) l-y as an amorphous material manufactured, which has pronounced electrical insulation properties under the conditions of use shows.

On the other hand, when the second amorphous layer (II) is mainly used for Improvement of the properties in the case of continuous, repeated use or the properties related to the influence of environmental conditions during The application envisaged may be the extent of the aforementioned electrical Insulation properties are decreased to some extent, and a- (Si CY (H, X) l-y x l-x y l-y can be manufactured as an amorphous material that in a certain The extent to which it is sensitive to the light with which it is irradiated.

In the formation of the second one consisting of a- (SixC1 ~ x) y (H, X) l ~ y amorphous layer (II) on the surface of the first amorphous layer (I) is the Carrier temperature during layer formation is an important factor affecting the structure and affects the properties of the layer to be formed, and the substrate temperature during the layer formation, according to the invention, suitable occasionally precisely regulated so that in the desired way a- (SixC1-x) y (H, X) 1-y, the desired Has properties that can be produced.

For an effective solution to the object of the invention, the carrier temperature in forming the second amorphous layer (II) suitably in an optimal one Temperature range according to that used to form the second amorphous layer (II) Procedure to be chosen. However, the support temperature may suitably be 20 to 4000C, preferably 50 to 3500C and in particular 100 to 3000C. For the Formation of the second amorphous layer (II) can advantageously be the sputtering process or the glow discharge method can be used because in this case an accurate Regulating the composition ratio of the atoms forming the layer or a regulation of the layer thickness in a relatively simple way compared to others Procedure can be carried out. When the second amorphous layer (II) after these Film formation method is formed, the discharge power and the gas pressure during film formation similar to the above-mentioned support temperature important factors affecting the properties of the a- (SixC1-x) y (H, X) 1-y influence.

For an effective production of a- (Si C l-x (H, X) x y l-y that the for the solution of the tasks of the invention has necessary properties, with with good productivity, the discharge power can suitably be 10 to 300 W, preferably 20 to 250 W and in particular 50 to 200 W.

The gas pressure in a deposition chamber can preferably be 0.013 to 1.3 mbar and in particular 0.13 to 0.67 mbar.

The numerical ranges mentioned above can be used within the framework of Invention as preferred numerical ranges for carrier temperature and discharge power etc. are mentioned. However, these factors for layer formation do not become independent determined separately from each other, but rather the optimal values of the individual factors for layer formation are suitably based on an organic Relationship to each other established so that a second amorphous layer are formed which consists of a- (SixCl X) y (H, X) 1 y with desirable properties.

The content of carbon atoms in the second amorphous layer (II) of the photoconductive recording element of the invention is similar to that Conditions for the production of the second amorphous layer (II) are important Factor for achieving the desired properties with which the task of the Invention is solved.

The content of carbon atoms in the second amorphous layer (II) may be appropriate depending on the nature and characteristics of the for Formation of this layer serving, amorphous material can be set.

That is, the amorphous material represented by the above formula a- (siXcl-x) y (Hsx) l-y is represented, generally in an amorphous material, the consists of silicon atoms and carbon atoms, (according to standing referred to as "a-SiaC1-a", where 0 <a <1), an amorphous material that consists of silicon atoms, carbon atoms and hydrogen atoms [hereinafter as "a- (SibC1-b) c H1-c", where 0 <b, c z 1, denotes7 and an amorphous material, that of silicon atoms, carbon atoms and halogen atoms and optionally hydrogen atoms is hereinafter referred to as "a- (sidC1-d) e (H, X) 1-e", wherein 0 <d, ex 1 can be divided.

If the second amorphous layer (II) of the recording element according to the invention consists of a-SiaC1-a, the content of the in the second amorphous layer (II) carbon atoms contained generally 1 x 10 3 to 90 atom%, preferably 1 to 80 atomic% and especially 10 to 75 atomic%. That means that a in the Formula a-SiaC1 in general 0.1 to 0.99999, preferably 0.2 to 0.99 and in particular Can be 0.25 to 0.9.

If the second amorphous layer (11) in the context of the invention from a- (SibC1 ~ b) cHl-c exists, the content of the carbon atoms contained in the second amorphous layer (II) can be generally 1 x 10 to 90 atom%, preferably 1 to 90 atom% and in particular 10 to 80 atom%, while the content of hydrogen atoms in general 1 to 40 atom%, preferably 2 to 35 atom% and especially 5 to 30 atom% can. A photoconductive recording element formed to have a has hydrogen atom content within these ranges is practical for Applications eminently suitable.

In the formula a- (Si b C b) clil 1- @, therefore, b can generally be 0.1 to 0.99999, preferably 0.1 to 0.99 and in particular 0.15 to 0.9, while c in general from 0.6 to 0.99, preferably from 0.65 to 0.98 and in particular from 0.7 to Can be 0.95.

When the second amorphous layer (II) made of a- (Si C) d l-d e (H, X) 1 e exists, the content of those contained in the second amorphous layer (II) can be Carbon atoms generally 1 x 10 3 to 90 atom%, preferably up to 90 atom-oo and particularly 10 to 80 atomic%. The content of halogen atoms can be im generally 1 to 20 atom%, preferably 1 to 18 atom% and especially 2 to 15 at%. A photoconductive recording element formed so as to that it has an halogen atom content lying within these ranges is for practical applications in an excellent way. The amount of if applicable Hydrogen atoms contained therein may generally be 19 atomic% or less and preferably 13 atomic% or less.

In the formula a- (SidC1-d) e (H, X) 1-e, d can generally be 0.1 to 0.99999, preferably 0.1 to 0.99 and in particular 0.15 to 0.9, while e in general 0.8 to 0.99, preferably 0.82 to 0.99 and in particular 0.85 to 0.98 can.

The range of the numerical value of the layer thickness of the second amorphous Layer (II) is one of the important factors for an effective solution to the task of the invention and may suitably depending on the intended purpose be determined so that the object of the invention is achieved in an effective manner.

It is necessary that the layer thickness of the second amorphous layer (II) in an appropriate manner, with due regard to relationships with the Content of carbon atoms, the layer thickness of the first amorphous layer (I) and other organic relationships to those required for each layer area Properties is set. In addition, they are also suitably economical Aspects such as productivity or the possibility of mass production considered.

In the context of the invention, the layer thickness of the second is amorphous Layer (II) suitably from 0.003 to 30 µm, preferably from 0.004 to 20 µm, and especially 0.005 to 10 µm.

Next, an example of the method of manufacturing the photoconductive recording element according to the invention explained.

Fig. 11 shows an example of the apparatus for manufacturing a photoconductive recording element.

In the gas bombs 1102 to 1106 are hermetically sealed, gaseous Starting materials for the formation of the photoconductive recording element according to the invention contain. For example, 1102 is a bomb containing SiH4 gas (purity: 99.999%) (hereinafter referred to as SiH4 / He for short), 1103 is a bomb, which contains GeH4 gas (purity: 99.999%) diluted with He (hereinafter referred to as GeH4 / He), 1104 is a bomb containing SiF4 gas diluted with He (purity: 99.99%) (hereinafter referred to as SiF4 / He for short), 1105 is a He gas bomb (Purity: 99.999%) and 1106 is an H2 gas bomb (purity: 99.999 %).

To allow these gases to flow into the reaction chamber 1101, First, the main valve 1134 is opened to the reaction chamber 1101 and the gas piping to evacuate after confirming that valves 1122 through 1126 of the gas bombs 1102 to 1106 and the ventilation valve 1135 closed and the inflow valves 1112 to 1116, the outflow valves 1117 to 1121 and the auxiliary valves 1132 and 1133 are open. The next step is the auxiliary valves 1132 and 1133 and the Outflow valves 1117 to 1121 closed when the on the vacuum measuring device 1136 read pressure has reached about 6.7 nbar.

The following is an example of the formation of an amorphous layer described on a cylindrical support 1137. SiH4 / He gas from the gas bomb 1102 and GeH4 / He gas from the gas bomb 1103 are put into the flow regulators 1107 and 1108, respectively, are allowed to flow in by opening valves 1122 and 1123 are to reduce the pressures on outlet gauges 1127 and 1128 to a value of, respectively 0.98 bar, and gradually opening the inlet valves 1112 and 1113 be opened. Then the outflow valves 1117 and 1118 and the auxiliary valve 1132 gradually opened to allow the individual gases to flow into the reaction chamber 1101 allow. The discharge valves 1117 and 1118 are regulated so that the flow rate ratio from SiH4 / He to GeH4 / He reached a desired value, and also the opening of the Main valve 1134 is read on vacuum gauge 1136 while observing Pressure regulated, in such a way that the pressure in the reaction chamber 1101 a desired Value reached. After it was confirmed that the temperature of the cylindrical support 1137 was set to 50 to 400 C by the heater 1138, the Power source 1140 set to a desired power in the reaction chamber 1101 to excite a glow discharge, whereby germanium atoms in the formed layer to be built in.

As described above, the glow discharge is for a Maintain desired period of time until a first on the support 1137 Layer region (G) has been formed. If the first layer area (G) is in a desired layer thickness has been formed, the glow discharge is under the same conditions and following the same procedure as in the formation of the first Layer area (C), with the discharge valve 1118 being completely closed and the discharge conditions are changed if so desired for maintaining a desired length of time, thereby creating on the first layer area (G) a second layer region (S) which essentially contains no germanium atoms, can be formed.

To the state of distribution of the germanium atoms in the first layer area (G) should be included to make uneven, the glow discharge can be in a Stage in which preliminary operations according to a predetermined procedure have been terminated, stimulated while concurrently performing a procedure at which the flow rate of the GeH4 / He gas is in agreement with a previously designed curve of the rate of change through gradual Change of opening of valve 1118 by a manual method or by means of an externally driven motor, thereby increasing the distribution concentration the germanium atoms contained in the layer formed can be regulated.

For the incorporation of oxygen atoms into the structure of the first layer area (C) and / or the second layer region (S) can be used during the formation of the individual Layer areas in addition to the gases described above a gaseous one Starting material for the introduction of oxygen atoms, for example NO, initiated will.

The method described above in connection with the Germani umatomen can be applied in the same way to the distribution state of the oxygen atoms in the layer region is uneven in the direction of the layer thickness to design.

For the installation of a used to regulate the line properties Substance in the first layer area (G) and / or the second layer area (S) can during the formation of the individual layer areas in the gases, which in the deposition chamber 1101 are to be introduced, a gas such as B2H6 or PH3 etc. must be added.

In the course of the layer formation, the layer support 1137 p can suitably rotated by a motor 1139 at a constant speed to produce a to bring about uniform layer formation.

3311835 For the manufacture of a photoconductive recording element with the same layer structure as shown in FIG. 28, on the first amorphous layer (I), which is similar to the formation of the aforementioned, amorphous layer has been formed in a desired layer thickness, a second amorphous layer (II) are formed.

That is, the formation of the second amorphous layer (II) by means of same valve actuation as in the case of the formation of the first amorphous layer (I) can be carried out by, for example, SiH4 gas and G 2H4 gas, the optionally diluted with a diluting gas such as He, into the reaction chamber can flow in and a glow discharge in the chamber under the desired conditions stimulates.

For the incorporation of halogen atoms in the second amorphous layer (II) for example SiF4 gas and C2H4 gas or a mixture of these gases can be used with SiH4 gas, and the second amorphous layer (II) can be similar Manner as described above.

The content of carbon atoms in the second amorphous layer (II) to be included can be regulated in the desired manner by for example, the flow rate ratio of SiH4 gas to C2H4 -Gas to be introduced into the reaction chamber 1101 changed when the film formation takes place by glow discharge, or by changing the atomization area ratio the silicon wafer changed to the graphite wafer in the formation of a target, when the film is formed by sputtering or by molding one Targets changed the mixing ratio of silicon powder to graphite powder. Of the Content of halogen atoms (X) contained in the second amorphous layer (II) can be regulated by adjusting the flow rate of a gaseous starting material (for example SiF4 gas) for the introduction of Halogen atoms regulated in the reaction chamber 1101.

The inventive photoconductive recording element which is so is designed so that it has a layer structure as described above, can overcome all of the problems mentioned above and shows excellent results electrical, optical and photoconductive properties, excellent dielectric strength and good environmental impact properties of use.

The photoconductive recording element according to the invention shows particularly in the event that it is used as an imaging member for electrophotographic purposes does not have any influence on the image formation by residual potentials and has stable electrical properties with a high sensitivity and a high S / N ratio as well as excellent resistance to light fatigue and has at repeated use excellent properties, which makes it possible to in a stable manner to get the one repeated images with a high quality exhibit high density, clear halftone, and high resolution.

The photoconductive recording element of the present invention also has high photosensitivity in the entire visible light range particularly excellent in terms of adaptation to a semiconductor laser and shows a quick response to light.

Example 1 Using the manufacturing apparatus shown in FIG were on a cylindrical aluminum support under the table 1A conditions specified layers formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 2 Using the manufacturing apparatus shown in FIG layers were formed as in Example 1, but the conditions in in the manner shown in Table 2A, wherein an imaging member for electrophotographic Purposes was obtained.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 1, but with positive polarity of the corona charge and With a negatively charged developer, images are generated with a very clear image quality was obtained.

Example 3 Using the manufacturing apparatus shown in FIG layers were formed as in Example 1, but the conditions in in the manner shown in Table 3A, wherein an imaging member for electrophotographic Purposes. Was obtained.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 1 produced images, with a very clear image quality was obtained.

Example 4 In exactly the same manner as in Example 1, layers were made formed, but the content of germanium atoms in the first layer was changed, by changing the flow rate ratio of GeH4 / He gas to SiH4 / He gas such as shown in Table 4A. In this way, image-forming elements were each made manufactured for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions generated as in Example 1 images being those shown in Table 4A Results were obtained.

Example 5 In exactly the same manner as in Example 1, layers were made but the layer thickness of the first layer was as shown in Table 5A changes. In this way, image forming members for electrophotographic Purposes.

Using the obtained imaging members, Receiving images, paper materials using the same method and under the same Conditions generated as in Example 1 images being those shown in Table 5A Results were obtained.

Example 6 Using the manufacturing apparatus shown in FIG were on a cylindrical aluminum support under the table 6 A specified conditions layers formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 7 Using a prepared as described in Example 1 Electrophotographic imaging members were among the same Toner image forming conditions as in Example 1, generated transferred toner images, but instead as a light source for the generation of electrostatic charge images The tungsten lamp uses a semiconductor laser (10 mW) of the GaAs system at 810 nm became. The image quality of the transferred toner images was evaluated, whereby revealed that clear high quality images that have excellent resolution and a showed good reproducibility of reproduction of halftones could be obtained.

Example 8 Using the manufacturing apparatus shown in FIG were on a cylindrical aluminum support under the table 1B specified conditions layers formed while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the layer formation in agreement with the graph of the rate of change of the gas flow rate ratio shown in Fig. 12 was changed. Thus, an imaging member for electrophotographic Purposes received.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 9 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 2B while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time course of the layer formation in accordance with the curve shown in FIG The rate of change of the gas flow rate ratio changed and otherwise the same conditions as in Example 8 were used. Thus, there was obtained an imaging member for electrophotographic use obtain.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 8 produced images, with a very clear image quality was obtained.

Example 10 Using the manufacturing apparatus shown in FIG. 11 layers were formed under the conditions shown in Table 3B while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 8 were used. In this way a 13 image generating element for electrophotographic purposes was obtained.

Using the obtained imaging member, Hildempfanp, materials made of paper using the same process and under the same Conditions as in Example 8 produced images, with a very clear image quality was obtained.

Example 11 Using the manufacturing apparatus shown in FIG. 11 layers were formed under the conditions shown in Table 4B while the gas flow rate ratio of GeSI4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 8 were used. In this way a Imaging element obtained for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 8 produced images, with a very clear image quality was obtained.

Example 12 By means of the setting device shown in FIG. layers were formed under the conditions shown in Table 5B while the gas flow rate ratio of GeH4 / He gas to SiH4IHe-C7as over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 8 were used. In this way a Imaging element obtained for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 8 produced images, with a very clear image quality was obtained.

Example 1B Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 6B while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 8 were used. In this way a Imaging element obtained for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 8 produced images, with a very clear image quality was obtained.

Example 14 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 7B while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 8 were used. That way it was an image forming member for electrophotographic use was obtained.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 8 produced images, with a very clear image quality was obtained.

Example 15 Under the same conditions as in Example 8, wherein however instead of SiH4 / He gas Si2H6 / He gas was used and the conditions were changed in the manner shown in Table 8B, layers were formed. Thus, there was obtained an imaging member for electrophotographic use obtain.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 8 produced images, with a very clear image quality was obtained.

Example 16 Under the same conditions as in Example 8, wherein however instead of SiH4 / He gas SiF4 / He gas was used and the conditions were changed in the manner shown in Table 9B, layers were formed. Thus, there was obtained an imaging member for electrophotographic use contain.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 8 produced images, with a very clear image quality was obtained.

Example 17 Under the same conditions as in Example 8, wherein however, instead of SiH4 / He gas (SiH4 / He + SiF4 / He) gas was used and the conditions were changed in the manner shown in Table 108, became layers educated. Thus, there was obtained an imaging member for electrophotographic use obtain.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in example R images are generated, with a very clear image quality was obtained. neExample 18 r n the example;) ielen R to 17 were the conditions modified for the manufacture of the second layer as shown in Table 11B, otherwise the same conditions as in these examples were used. In this way, imaging members for electrophotographic use were made. Using the manufactured 11 th oil-generating elements, the same Procedure and under the same conditions as in Example 8 images are generated, wherein the results shown in Table 12B were obtained.

Example 19 In examples 8 to 17, the conditions for modified the manufacture of the second layer as shown in Table 13B, otherwise the same conditions as in these examples were used. In this way, imaging members for electrophotographic use were made.

Using the prepared imaging members, using the same procedure and under the same conditions as in Example 8 Mild producing the results shown in Tibelle 14f3 were obtained.

Example 20 Using a prepared as described in Example 8 Electrophotographic imaging members were among the same Toner blank forming conditions as in Example 8 generated transferred toner images, however, as a light source for the generation of electrostatic charge shields Instead of the \\ tol f ram lamp an idalconductor laser (10 rnW) of the CeAs system is included 810 nm was used. The image quality of the transferred toner images was evaluated It was found that clear, high quality images exhibiting excellent resolution and showed good reproducibility of reproduction of halftones could become.

Example 21 Using the lowering device shown in FIG were on a cylindrical aluminum support under the table 1C conditions specified layers formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at +5.0 kV for 0.3 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a negatively charged toner and toner carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the one on the imaging element located on the toner image Corona charge with +5.0 kV was transferred to an image receiving material made of paper, a clear, high-density image was obtained which had excellent resolution and showed good reproducibility of reproducing halftones.

Example 22 Using the manufacturing apparatus shown in FIG layers were formed as in Example 21, but the conditions in FIG in the manner shown in Table 2C, an imaging member for electrophotographic Purposes was obtained.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 21, but with negative polarity of the corona charge and With a positively charged developer, images are generated with a very clear image quality was obtained.

Example 23 Using the manufacturing apparatus shown in FIG layers were formed as in Example 21, but the conditions in FIG in the manner shown in Table 3C, being an imaging member for electrophotographic Purposes was obtained.

Using the obtained imaging member, Image receiving materials made of paper by the same process and under the same Conditions as in Example 21 images produced, with a very clear image quality was obtained.

Example 2/1 In exactly the same manner as in Example 21 were made Layers formed, however, the germanium atom content was in the first layer changed by changing the flow rate ratio of CeH4 / He gas to SiH4 / He gas was changed as shown in Table 4C. In this way, each became image forming elements manufactured for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as generated in Example 21 images, those shown in Table 4C Results were obtained.

Example 25 In exactly the same manner as in Example 21 were made Layers formed, but the layer thickness of the first layer was as shown in the table 5C changed. In this way, image-forming elements for manufactured for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as in Example 21 generated images, those shown in Table 5C Results were obtained.

Example 2G Using the manufacturing apparatus shown in FIG were on a cylindrical aluminum support under the table 6C conditions specified layers formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at +5.0 kV for 0.3 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a negatively charged toner and toner carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging +5.0 kV was transferred to a paper image receiving material became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 27 Using the manufacturing apparatus shown in FIG were placed on a cylindrical aluminum layer carrier under the table below 7C conditions specified layers formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the image forming element by corona charging was transferred at -5.0 kV to a paper image receiving material, became a Obtain a clear, high density image that has excellent resolution and showed good reproducibility of reproduction of semitones.

Example 2P Using the manufacturing apparatus shown in FIG were on a cylindrical aluminum support under the table 8C conditions specified layers formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became available containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 29 Using the manufacturing process shown in Fig. 11 layers were formed as in Example 21, but the conditions in FIG Modified in Table 9C p, shown manner, an imaging member for electrophotographic Purposes was obtained.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 21 images produced, with a very clear image quality was obtained.

Example 30 Using the manufacturing apparatus shown in FIG layers were formed as in Example 21, but the conditions in FIG in the manner shown in Table 100, wherein an imaging member for electrophotographic Purposes was obtained.

Using the obtained imaging member, Image receiving materials made of paper by the same process and under the same Conditions produced as in Example 21 images, with a very clear image quality was obtained.

Example 31 Using a prepared as described in Example 21 Imaging elements for electrophotographic use were made under the same Toner image generation conditions as in Example 21 generated transferred toner images, however, being used as a light source for the generation more electrostatic Charge images instead of a tungsten lamp using a semiconductor laser (10 mW) of the GaAs system at 810 nm was used. The image quality of the transferred toner images was which was found to be clear, high-quality images which are excellent Showed resolution and good reproducibility of reproduction of semitones, could be obtained.

Example 32 Using the manufacturing apparatus shown in FIG were on a cylindrical aluminum support under the table 1D specified conditions layers formed while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the graph of the rate of change of the gas flow rate shown in Fig. 19 relationship has been changed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV transferred to an image receiving material made of paper gen was a clear, high-density image was obtained which had excellent resolution and showed good reproducibility of reproducing halftones.

Example 33 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 2D while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 32 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 32 images produced, with a very clear image quality was obtained.

Example 34 Using the manufacturing apparatus shown in FIG layers were formed under the conditions given in Table 3D while the gas flow rate ratio of GeH4 / He gas to SiH4 / 1-! e gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 32 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging element, Image receiving materials made of paper by the same method and under the same Conditions as in Example 32 images produced, with a very clear image quality was obtained.

Example 35 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 4D while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of the film formation in accordance with the curve of the rate of change shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 32 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper according to the $ 71e method and under the same Conditions as in Example 32 images produced, with a very clear image quality was obtained.

Example 36 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 5D while the gas flow rate ratio of GeH4 / He gas to SiH; / F + e gas over time course of film formation in accordance with the curve shown in FIG The rate of change of the gas flow rate ratio changed and otherwise the same conditions as in Example 32 were applied. Thus, an imaging member for electrophotographic Purposes received.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 32 images produced, with a very clear image quality was obtained.

Example 37 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 6D while. the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of the layer formation in accordance with the curve of the change shown in FIG. 23, srieschwindip, speed of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 32 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Paper image receiving materials following the same procedures and under the same Conditions as in Example 32 images produced, with a very clear image quality was obtained.

Example 38 Using the manufacturing apparatus shown in FIG. 11 layers were formed under the conditions set out in Table 7D while the gas flow rate ratio of Gel4 / He gas to Si He gas in the second run of film formation in accordance with the rate of change curve shown in FIG of Gas flow rate ratio was changed and otherwise the same conditions as in Example 32 were used. To this Thus, an imaging member for electrophotographic use was obtained.

Using the obtained imaging member, Paper image receiving materials by the same process and under the same Conditions as in Example32 images are generated, with a very clear image quality was obtained.

Example 3q Under the same conditions as in Example 32, where however instead of SiH4 / He gas Si2H6 / He gas was used and the conditions were changed in the manner shown in Table 8D, layers were formed. Thus, there was obtained an imaging member for electrophotographic use obtain.

Using the obtained image forming element, B image receiving mate rials made of paper by the same procedure and under the the same conditions as in Example 32 images were generated, with a very clear image quality was obtained.

Example 40 Under the same conditions as in Example 32, wherein however instead of SiH4 / He gas SiF4 / He gas was used and the conditions were changed in the manner shown in Table 9D, layers were formed. Thus, there was obtained an imaging member for electrophotographic use obtain.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 32 images produced, with a very clear image quality was obtained.

Example 41 Under the same conditions as in Example 32, wherein however instead of SiH4 / He gas (SiH4 / He + SiF4 / He) -Cas was used and the conditions were changed in the manner shown in Table 10D, layers were formed. Thus, there was obtained an imaging member for electrophotographic use obtain.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 32 images produced, with a very clear image quality was obtained.

Example 42 Using the manufacturing apparatus shown in FIG were on a cylindrical aluminum support under the table 110 specified conditions layers formed while the gas flow rate ratio from CeH4 / He gas to SiH4 / He gas in the course of the film formation in agreement with the graph of the rate of change of the gas flow rate ratio shown in Fig. 19 was changed. Thus, an imaging member for electrophotographic Purposes received.

The obtained imaging member was placed in a charge exposure test apparatus brought in, subjected to corona charging at -5.0 kV for 0.3 s and right away then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 43 In Example 42, during the preparation of the first Layer the flow rate ratio of D 2H6 to (SiH4 + GeH4) and during of making the second layer, the flow rate ratio of B 2H6 changed to SiH4 in the manner given in Table e 12D, otherwise the same conditions as in Example 42 were used. That way were each received imaging members for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as generated in Example 42 images, those shown in Table 12D Results were obtained.

Example 44 In Examples 32 to 41, the conditions for modified the manufacture of the second layer as shown in Table 13D, otherwise the same conditions as in these examples were used. In this way, imaging members for electrophotographic use were made.

Using the prepared imaging members, after the same procedure and under the same conditions as in Example 32 images to obtain the results shown in Table 14D.

Example 45 In Examples 32 to 41, the conditions for modified the manufacture of the second layer as shown in Table 15D, otherwise the same conditions as in these examples were used. In this way, imaging members for electrophotographic use were made.

Using the prepared imaging members, after the same procedure and under the same conditions as in Example 32 images to obtain the results shown in Table 15D.

Example 46 Using a prepared as described in Example 32 Electrophotographic imaging members were among the same Toner image generation conditions as in example 32 transferred Generated toner images, however, as a light source for the generation of electrostatic Charge images instead of a tungsten lamp using a semiconductor laser (10 mW) of the GaAs system at 810 nm was used. The image quality of the transferred toner images was which was found to be clear, high-quality images which are excellent Showed resolution and good reproducibility of reproduction of semitones, could be obtained.

Example 47 Using the setting device shown in FIG were on a cylindrical aluminum support under the table 1E specified conditions layers formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Picture with a high density, which has excellent resolution and showed good reproducibility of reproducing halftones.

Example 48 Using the manufacturing apparatus shown in FIG layers were formed as in Example 47, except that the conditions in FIG in the manner shown in Table 2E, using an imaging member for electrophotographic Purposes was obtained.

Using the obtained imaging element, were on Image receiving materials made of paper by the same method and under the same Conditions as in Example 47 but with positive polarity of the corona charge and With a negatively charged developer, images are generated with a very clear image quality was obtained.

Example 49 Using the establishment device shown in FIG layers were formed as in Example 47, except that the conditions in FIG in the manner shown in Table 3E, using an imaging member for electrophotographic Purposes was obtained.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 47 images produced, with a very clear image quality was obtained.

Example 50 In exactly the same manner as in Example 47 were made Layers formed, however, the germanium atom content was in the first layer changed by changing the flow rate ratio of GeH4 / He gas to SiH4 / He gas was changed as shown in Table 4E. In this way, image-forming elements were each made manufactured for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as generated in Example 47 images, those shown in Table 4E Results were obtained.

Example 51 In exactly the same manner as in Example 47 were made Layers formed, but the layer thickness of the first layer was as shown in the table 5E shown changed. In this way, image-forming elements for manufactured for electrophotographic purposes.

Using the obtained imaging members, were made on Image receiving materials made of paper by the same method and under the same Conditions as generated in Example 17 Dilder, being those shown in Table 5E Results were obtained.

Example '> Using the manufacturing apparatus shown in FIG. 11 were on a cylindrical aluminum support under the table ßE specified conditions layers formed. In this way a picture generation element obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 53 Using one prepared as described in Example 47 Electrophotographic imaging members were among the same Toner image generation conditions as in Example 47 generated transferred toner images, but instead as a light source for the generation of electrostatic charge images The tungsten lamp uses a semiconductor laser (10 mW) of the CaAs system at 810 nm became. The image quality of the transferred toner images was evaluated, whereby revealed that clear high quality images that have excellent resolution and a showed good reproducibility of reproducing halftones could be obtained.

Example 54 Using the manufacturing apparatus shown in FIG were on a cylindrical aluminum support under the table 1F specified conditions layers formed while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the graph of the rate of change of the gas flow rate ratio shown in Fig. 12 was changed. Thus, an imaging member for electrophotographic Purposes received.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 55 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 2F while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 54 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 54 produced images, with a very clear image quality was obtained.

Example 56 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 3F while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 54 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 54 produced images, with a very clear image quality was obtained.

Example 57 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 4F while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time the layer formation in accordance with that in Fip ,. The rate of change curve shown in FIG. 21 of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 54 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 54 produced images, with a very clear image quality was obtained.

Example 58 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 5F while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 54 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging element, Paper receiving materials are made using the same method and under the same conditions Conditions as in Example 54 produced images, with a very clear image quality was obtained.

Example 59 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 6F while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 54 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 54 produced images, with a very clear image quality was obtained.

Example 60 Using the manufacturing apparatus shown in FIG layers were formed under the conditions given in Table 7F while the gas flow rate ratio of GeH4 / He gas to SiH4 ZHe gas with the lapse of time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 54 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Paper image receiving materials following the same procedures and under the same Conditions as in Example 54 produced images, with a very clear image quality was obtained.

Example 61 Under the same conditions as in Example 54, wherein however, instead of SiH4 / He gas, Si 2H6 / He gas was used and the conditions were changed in the manner shown in Table 8F, layers were formed. Thus, there was obtained an imaging member for electrophotographic use obtain.

Using the obtained imaging member, Paper receiving materials using the same process and under the same procedures Conditions as in Example 54 produced images, with a very clear image quality was obtained.

Example 62 Under the same conditions as in Example 54, wherein however, instead of SiH4 / He-Cas, SiF / He gas was used 4 and the conditions were changed in the manner shown in Table 9F, layers were formed. Thus, there was obtained an imaging member for electrophotographic use obtain.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 64 produced images, with a very clear image quality was obtained.

Example 63 Under the same conditions as in Example 54, wherein however, instead of SiH4 / He gas (SiH4 / He + SiF4 / He) gas was used and the conditions modified in the manner shown in Table iOF became layers educated. Thus, there was obtained an imaging member for electrophotographic use obtain.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 54 produced images, with a very clear image quality was obtained.

Example 64 In Examples 54 to 63, the conditions for modified the manufacture of the second layer as shown in Table 11F, otherwise ns pns th the same conditions as in these examples are applied became. In this way, imaging members for electrophotographic use have become manufactured.

Using the prepared imaging members, after the same procedure and under the same conditions as in Example 54 images was produced, with the results shown in Table 12F being obtained.

Example 65 In Examples 54 to 63 the conditions fir modified the manufacture of the second layer as shown in Table 13F, otherwise the same conditions as in these examples were used. In this way, imaging members for electrophotographic use were made.

Using the prepared imaging members were following the same procedure and under the same conditions as in Example 54 Images were generated with the results shown in Table 14F.

Example 66 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 15F while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas, and the Gas flow rate ratio of NO gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio were changed and otherwise the the same conditions as in Example 54 were applied. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 54 produced images, with a very clear image quality was obtained.

Example 67 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 16F while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas, and the Gas flow rate ratio of NO gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio were changed and otherwise the the same conditions as in Example 54 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 54 produced images, with a very clear image quality was obtained.

Example 68 Using one as described in Examples 54-63 manufactured imaging member for electrophotographic use were under toner images transferred under the same toner image forming conditions as in Example 54 generated, but as a light source for the generation of electrostatic charge images Instead of the tungsten lamp, a semiconductor laser (10 mW) of the GaAs system at 810 nm was used. The image quality of the transferred toner images was rated where It was found that clear, high quality images that have excellent resolution and showed good reproducibility of reproduction of halftones can be obtained could.

Example 69 Using the manufacturing apparatus shown in FIG were on a cylindrical aluminum support under the table 1G conditions specified layers formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at +5.0 kV for 0.3 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and the Exposure was made using a translucent Test card carried out with 2 lx.s.

Immediately thereafter, a negatively charged toner and toner carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging +5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 70 Using the manufacturing apparatus shown in FIG layers were formed as in Example 69, but the conditions in FIG in the manner shown in Table 2G, using an imaging member for electrophotographic Purposes was obtained.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 69 but with negative polarity of the corona charge and With a positively charged developer, images are generated with a very clear image quality was obtained.

Example 71 Using the manufacturing apparatus shown in FIG layers were formed as in Example 69, but the conditions in FIG in the manner shown in Table 3G, using an imaging member for electrophotographic Purposes was obtained.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 69 images produced, with a very clear image quality was obtained.

Example 72 In exactly the same manner as in Example 69 were made Layers formed, however, the germanium atom content was in the first layer changed by changing the flow rate ratio of GeH4 / He gas to SiH4 / He gas was changed as shown in Table 4G. In this way, image-forming elements were each made manufactured for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as in Example 69 images produced, those shown in Table 4G Results were obtained.

Example 73 In exactly the same manner as in Example 69 were made Layers formed, but the layer thickness of the first layer was as shown in the table 5G shown changed. on in this way each became image-forming elements manufactured for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as in Example 69 images produced, those shown in Table 5G Results were obtained.

Example 74 Using the manufacturing apparatus shown in FIG were placed on a cylindrical support made of aluminum under those in the tables 6G to 8G specified conditions layers formed. In this way, imaging elements became obtained for electrophotographic purposes (sample nos. G601, G602 and G603, respectively).

The obtained image forming elements were each placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 5 and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 75 Using the manufacturing apparatus shown in FIG layers were formed as in Example 69, but the conditions in FIG modified in the manner shown in Tables 9G and 10G, with imaging elements for electrophotographic purposes (sample no.

G702) were obtained.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as in Example 69 images produced, with a very clear image quality was obtained.

Example 76 Using the manufacturing apparatus shown in FIG layers were formed as in Example 69, but the conditions in FIG in the manner shown in Tables 11C through 15G, with imaging elements for electrophotographic use (Sample Nos. G801 to G805) were obtained.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as in Example 69 images produced, with a very clear image quality was obtained.

Example 77 Using one prepared as described in Example 69 Electrophotographic imaging members were among the same Toner image generation conditions as in Example 69 generated transferred toner images, but instead as a light source for the generation of electrostatic charge images the tungsten lamp a semiconductor laser (10 mW) of the GaAs system at 810 nm was used. The image quality of the transferred toner images was which was found to be clear, high-quality images which are excellent Showed resolution and good reproducibility of reproduction of semitones, could be obtained.

Example 78 Using the manufacturing apparatus shown in FIG were on a cylindrical aluminum support under the table 1H specified conditions layers formed while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the graph of the rate of change of the gas flow rate ratio shown in Fig. 19 was changed. Thus, an imaging member for electrophotographic Purposes received.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately afterwards, a positively charged toner and toner carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 79 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 2H while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 78 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 78 images are generated, with a very clear image quality was obtained.

Example BO Using the manufacturing apparatus shown in FIG. 11 layers were formed under the conditions shown in Table 3H while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 7B were used. That way it was an image forming member for electrophotographic use was obtained.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 78 images produced, with a very clear image quality was obtained.

Example 81 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 4H while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 78 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the p, leichen method and under the same Conditions as in Example78 images are generated, with a very clear image quality was obtained.

Example 82 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 5H while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time course of the layer formation in accordance with the curve shown in FIG The rate of change of the gas flow rate ratio is changed and otherwise the same conditions as in Example 78 were used. Thus, there was obtained an imaging member for electrophotographic use obtain.

Using the obtained imaging member, Forming care materials made of paper by the same process and under the same Conditions as in Example 78 images produced, with a very clear image quality was obtained.

Example 83 Using the manufacturing apparatus shown in Fig. 11, layers were formed under the conditions shown in Table 6H while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the change rate curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 78 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 78 images produced, with a very clear image quality was obtained.

Example 84 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table 7H while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas in the The time course of film formation in accordance with the curve shown in FIG the rate of change of the gas is changed by flow rate ratios and otherwise the same conditions as in Example 78 were used. Thus became an image forming member for electrophotographic use obtain.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 78 images produced, with a very clear image quality was obtained.

Example 85 Under the same conditions as in Example 78, wherein however, instead of SiH4 / He gas, Si 2H6 / He gas was used and the conditions were changed in the manner shown in Table 8H, layers were formed. Thus, there was obtained an imaging member for electrophotographic use obtain.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 78 images produced, with a very clear image quality was obtained.

Example 86 Under the same conditions as in Example 78, wherein however instead of SiH4 / He gas SiF4 / He gas was used and the conditions were changed in the manner shown in Table 9H, layers were formed. Thus, there was obtained an imaging member for electrophotographic use obtain.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 78 images produced, with a very clear image quality was obtained.

Example 87 Under the same conditions as in Example 78, wherein however, instead of SiH4 / He gas (SiH4 / He + S iF4 / He) gas was used and the conditions modified in the manner shown in Table 10H, became layers educated. Thus, an image forming member for electrophotographic use has been made obtain.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 78 images produced, with a very clear image quality was obtained.

Example 88 Using the manufacturing apparatus shown in FIG were on a cylindrical aluminum support under the table IIH specified conditions layers formed while the gas flow rate ratio from Geii4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the graph of the rate of change of the gas flow rate ratio shown in Fig. 19 was changed. Thus, an imaging member for electrophotographic Purposes received.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member left to hit, with a good toner on this surface image was obtained. As the toner image on the imaging member Corona charge with -5.0 kV was transferred to an image receiving material made of paper, a clear, high-density image was obtained which had excellent resolution and showed good reproducibility of reproducing halftones.

Example 89 In Example 88, the first Layer the flow rate ratio of B2H6 to (SiH4 + GeH4) and during of making the second layer, the flow rate ratio of B 2H6 changed to SiH4 in the manner given in Table 12H, otherwise the same conditions as in Example 88 were used. That way were each received imaging members for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as in Example 88 images produced, those shown in Table 12H Results were obtained.

Example 90 In Examples 78 to 87, the conditions for the preparation of the second layer in that shown in Tables 13H and 15H Modified manner, otherwise the same conditions as in these examples were applied. In this way, imaging members for electrophotographic Purposes (sample numbers H1301 to H 1310 or H 1401 to H 1410).

Using the produced image forming elements using the same procedure and under the same conditions as in Example 78 Images were generated giving the results shown in Tables 14H and 16H became.

Example 91 Using one prepared as described in Example 78 Electrophotographic imaging members were among the same Toner image generation pos conditions as in Example 78 generated transferred toner images, but instead as a light source for the generation of electrostatic charge images The tungsten lamp uses a semiconductor laser (10 mW) of the GaSvs system at 810 nm became. The image quality of the transferred toner images was evaluated, whereby then resulted in clear, high quality images that have excellent resolution and resolution showed good reproducibility of reproducing halftones could be obtained.

Example 92 Using the manufacturing device shown in FIG were on a cylindrical aluminum support under the table A1 conditions specified layers formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 93 Using the manufacturing apparatus shown in FIG 92 layers were formed as in Example, except that the conditions in FIG in the manner shown in Table A2, wherein an imaging member for electrophotographic Purposes was obtained.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 92 but with positive polarity of the corona charge and With a negatively charged developer, images are generated with a very clear image quality was obtained.

Example, 94 Using the manufacturing apparatus shown in FIG. 11 92 layers were formed as in Example, except that the conditions in FIG in the manner shown in Table A3, using an imaging member for electrophotographic Purposes was obtained.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 92 images produced, with a very clear image quality was obtained.

Example 95 In exactly the same manner as in Example 92 were made Layers formed, however, the germanium atom content was in the first layer changed by changing the flow rate ratio of GeH4 / He gas to SiH4 / He gas was changed as shown in Table A4. In this way, image-forming elements were each made manufactured for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as generated in Example 92 images, being those shown in Table A4 Results were obtained.

Example 96 imaging members were each made as in Example 92 produced, but the layer thickness was that of the structure of the amorphous layer (I) involved, first layer changed in the manner shown in Table AS.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as generated in Example 92 images, those shown in Table A5 Results were obtained.

Example 97 Using the manufacturing apparatus shown in FIG were on a cylindrical aluminum support under the table A6 specified conditions layers formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 98 Using one prepared as described in Example 92 Electrophotographic imaging members were among the same Toner image forming conditions as in Example 92 transferred toner images generated, but instead as a light source for the generation of electrostatic charge images The tungsten lamp uses a semiconductor laser (10 mW) of the GaAs system w at 810 nm became. The image quality of the transferred toner images was evaluated, whereby revealed that clear high quality images that have excellent resolution and a showed good reproducibility of reproducing halftones could be obtained.

Example 99 Electrophotographic imaging members (24 samples; Sample Nos. 8-201A to 8-208A, 8-301A to 8-308A, and 8-601A to 8-608A) were carried out under the same conditions and by the same procedure as in the Examples 93, 94 and 96 respectively, but the conditions for the preparation were made of the amorphous layer (II) was modified as shown in Table A7.

The obtained imaging members were individually placed in a copier placed in, corona charged at -5.0 kV for 0.2 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and the exposure was carried out at 1.0 lx.s. The latent charge image was with a positively charged developer containing toner and carrier and transferred to ordinary or uncoated paper. It was determined, that the transmitted image was very good. To remove the untransferred toner, that remained on the imaging member for electrophotographic use cleaning with a rubber blade was performed. These steps were repeated 100,000 times or more, but there was no deterioration in any case of the images observed.

The results of the overall assessment of the image quality of the transmitted Pictures and the evaluation of the durability in the repeated, continuous Uses are listed in Table A8.

Example 100 imaging members were each made the same Procedure as in Example 92, except that the ratio of the salary of silicon atoms to the content of carbon atoms in the amorphous layer (II) changed by the area ratio applied during the formation of the amorphous layer (II) changed from silicon wafer to graphite. With each of those made in this way Imaging elements were made according to the imaging, Repeated development and purification steps about 50,000 times, whereupon the evaluation the image quality with the results shown in Table A9 were obtained.

Example 101 imaging members were each made the same Procedure as in Example 92, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (II) varied by the flow rate ratio used during the formation of the amorphous layer (II) changed from SiH4 gas to C 2H4 gas. in any of those made in this way Imaging members followed the steps described in Example 92 through Transmission repeated about 50,000 times, whereupon an evaluation of the image quality is carried out where the results shown in Table A10 were obtained.

Example 102 imaging members were each made the same Procedure as in Example 92, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (II) varied by the flow rate ratio used during the formation of the amorphous layer (II) changed from SiH4 gas: SiF4 gas: C2H4 gas. With each of those made in this way Imaging elements were made according to the imaging, Repeated development and purification steps about 50,000 times, whereupon the evaluation the image quality with the results shown in Table All were obtained.

Example 103 Imaging members were made using the same procedure produced as in Example 92, but with the layer thickness of the amorphous layer (II) has been changed. For each sample, the imaging, Repeat development and purification steps, being those shown in Table A12 Results were obtained.

Example 104 Using the manufacturing apparatus shown in FIG was carried out on a cylindrical aluminum support under the conditions shown in Table B1 an imaging member for electrophotographic use educated.

The obtained imaging member was placed in a charge exposure test apparatus brought in, subjected to corona charging at -5.0 kV for 0.3 s and right away then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 105 Using the manufacturing apparatus shown in FIG became an imaging member for electrophotographic use as in Example 104 but the conditions were changed as shown in Table B2.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 104, but with positive polarity of the corona charge and with a negatively charged developer, images are produced, being very clear Image quality was obtained.

Example 106 Using the manufacturing apparatus shown in FIG was as in Example 104 except that the conditions were those shown in Table B3 Modified manner, an imaging member for electrophotographic use educated.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 104 images produced, with a very clear image quality was obtained.

Example 107 In exactly the same manner as in Example 104 were made Layers formed, however, the germanium atom content was in the first layer changed by changing the flow rate ratio of GeH4 / He gas to SiH4 / He gas was changed as shown in Table B4. In this way, image-forming elements were each made manufactured for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as generated in Example 104 images, those shown in Table B4 Results were obtained.

Example 108 In exactly the same manner as Example 104 were made Layers formed, but the layer thickness of the first layer was as shown in the table B5 shown changed. on in this way each became image-forming elements manufactured for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as in Example 04 images produced, those shown in Table B5 Results were obtained.

Example 109 Using the manufacturing apparatus shown in FIG was applied to a cylindrical aluminum support as in Example 104 Imaging element formed for electrophotographic purposes, however, the first amorphous layer (I) was formed under the conditions shown in Table B6 became.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately afterwards became a positively charged, toner and toner carrier containing developer in cascade onto the surface of the imaging member allowed to hit, a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 110 Using a prepared as described in Example 104 Electrophotographic imaging members were among the same Toner image generation conditions as in Example 104 generated transferred toner images, but instead as a light source for the generation of electrostatic charge images The tungsten lamp uses a semiconductor laser (10 mW) of the GaAs system at 810 nm became. The image quality of the transferred toner images was evaluated, whereby revealed that clear high quality images that have excellent resolution and a showed good reproducibility of reproducing halftones could be obtained.

Example 111 Electrophotographic imaging members (24 samples; Sample Nos. 12 -201B to 12-208B, 12-301B to 12-308B and 12-601B to 12-608B) were performed under the same conditions and using the same procedure as in Examples 105, 106 and 108 respectively, but the conditions for the preparation of the amorphous layer (II) was modified as shown in Table B7.

The obtained image-forming elements were placed one at a time in an optical printer into P, e brought under a corona charge with -5.0 kV for 0.2 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and the exposure was carried out at 1.0 lx.s. The latent charge image was with a positively charged developer containing toner and carrier and transferred to ordinary or uncoated paper. It was determined, that the transmitted image was very good. To the distance the not Trapped toner deposited on the electrophotographic imaging member Purification was left behind, cleaning with a rubber blade was carried out. These steps were repeated 100,000 times or more, but none Case a deterioration of the images is observed.

The results of the overall assessment of the image quality of the transmitted Pictures and the evaluation of the durability in the repeated, continuous Uses are listed in Table B8.

Example 112 imaging members were each made the same Procedure prepared as in Example 104, but the sputtering procedure was used applied and became the ratio de; Content of silicon atoms to the content of Carbon atoms in the amorphous layer (II) changed by that during formation the amorphous layer (II) applied area ratio of silicon wafer to graphite was changed. In any of the imaging members thus produced The imaging, developing, and cleaning steps described in Example 104 were followed repeated about 50,000 times, whereupon the evaluation of the image quality was carried out, where the results shown in Table B9 were obtained.

Example 113 imaging members were each made the same Procedure as in Example 104, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (II) varied by the flow rate ratio used during the formation of the amorphous layer (II) changed from SiH4 gas to C 2H4 gas. With each of those made in this way Imaging members followed the steps described in Example 104 through Transmission repeated about 50,000 times, whereupon an evaluation of the image quality is carried out where the results shown in Table B10 were obtained.

Example 114 Image making elements were each made according to the same Procedure as in Example 104, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (II) varied by the flow rate ratio used during the formation of the amorphous layer (II) changed from SiH4-Gas'SiF4-Gas: C2H4-Gas. With each of those made in this way Imaging elements were the imaging, Repeated development and purification steps about 50,000 times, whereupon the evaluation the image quality with the results shown in Table B11 were obtained.

Example 115 imaging elements were made according to the same: er drive produced as in Example 104, but with the layer thickness of the amorphous layer (II) has been changed. For each sample, the imaging, Repeat development and purification steps, being those shown in Table B12 Results were obtained.

Example 116 Using the manufacturing apparatus shown in FIG was carried out on a cylindrical aluminum support under the conditions shown in Table C1 an imaging member for electrophotographic use educated.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at +5.0 kV for 0.3 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a negatively charged toner and toner carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging +5.0 kV was transferred to a paper image receiving material became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 117 Using the manufacturing apparatus shown in FIG became an imaging member for electrophotographic use as in Example 116 but the conditions were changed as shown in Table C2.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 116 but with negative polarity of the corona charge and with a positively charged developer, images are produced, being very clear Image quality was obtained.

Example 118 Using the manufacturing apparatus shown in FIG was as in Example 116, except that the conditions were those shown in Table C3 Modified manner, an imaging member for electrophotographic use educated.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 116 produced images, with a very clear image quality was obtained.

Example 119 In exactly the same manner as Example 116 were made Layers formed, however, the germanium atom content was in the first layer changed by changing the flow rate ratio of GeH4 / He gas to SiH4 / He gas was changed as shown in Table C4. In this way each Imaging members for electrophotographic use (Sample No.

401C to 408C).

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as generated in Example 116 images, being those shown in Table C4 Results were obtained.

Example 120 In exactly the same manner as Example 116 were made Layers formed, but the layer thickness of the first layer was as shown in the table C5 shown changed. In this way, image-forming elements for electrophotographic purposes (Sample Nos. 501C to 508C).

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as generated in Example 116 images, those shown in Table C5 Results were obtained.

Example 121 Using the manufacturing apparatus shown in FIG were placed on a cylindrical support made of aluminum under those in the tables C6 to C8 specified conditions layers formed. In this way, imaging elements became for electrophotographic purposes (sample nos. 601C, 602G and 603G, respectively).

The obtained imaging members were each placed in a charge exposure test apparatus h, corona charged at +5.0 kV for 0.3 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a negatively charged toner and toner carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging When t5.0 kV was transferred to a paper image receiving material, it became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 122 Using the manufacturing apparatus shown in FIG were as in Example 116, but with the conditions in the tables C9 and C10 have been modified, imaging members for electrophotographic Purposes (specimens Nos. 701C and 702C).

Using the obtained imaging members, each on paper image receiving materials by the same procedure and under the same conditions as in example 116 images are generated, with a very clear image quality was obtained.

Example 123 Using the manufacturing apparatus shown in FIG were as in Example 116, but with the conditions in the tables Cll to C15 have been modified in the manner shown, imaging members for electrophotographic Purposes (specimens Nos. 801C to 805C).

Using the obtained imaging members, each on paper image receiving materials by the same procedure and under the same conditions as in example 116 images are generated, with a very clear image quality was obtained.

Example 124 Using one prepared as described in Example 116 Electrophotographic imaging members were among the same Toner image generation conditions as in Example 116 generated transferred toner images, however, being used as a light source for the generation more electrostatic Charge images instead of a tungsten lamp using a semiconductor laser (10 mW) of the GaAs system at 810 nm was used. The image quality of the transferred toner images was which was found to be clear, high-quality images which are excellent Showed resolution and good reproducibility of reproduction of semitones, could be obtained.

Example 125 imaging members for electrophotographic use (16 samples; sample numbers 12-201C to 12-208C and 12-301C to 12-308C) were taken under under the same conditions and by the same procedure as in Examples 117 and 118, respectively, but the conditions for making the amorphous Layer (II) modified as shown in Table C16.

The obtained imaging members were individually placed in a copier placed in, corona charged at +5.0 kV for 0.2 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and the exposure was carried out at 1.0 lx.s. The latent charge image was with a negatively charged developer containing toner and carrier and transferred to ordinary or uncoated paper. It was determined, that the transmitted image was very good. To remove the untransferred toner, that remained on the imaging member for electrophotographic use cleaning was carried out with a rubber blade. These steps were repeated 100,000 times or more, but there was no deterioration in any case of the images observed.

The results of the overall assessment of the image quality of the transmitted Pictures and the evaluation of the durability in the repeated, continuous Usage are listed in Table Cl6A.

Example 126 imaging members were each made the same Procedure as prepared in Example 116, except that the atomization procedure was used and the ratio of the content of silicon atoms to the content of Carbon atoms in the amorphous layer (II) changed by that during formation the amorphous layer (II) applied area ratio of silicon wafer to graphite was changed. In any of the imaging members thus produced The imaging, development, and cleaning steps described in Example 116 were followed repeated about 50,000 times, whereupon the evaluation of the image quality was carried out, where the results shown in Table C17 were obtained.

Example 127 imaging members were each made the same Procedure as prepared in Example 116, but the ratio of the contents was the Si, liciumatome to the content of the carbon atoms in the amorphous layer (II) varied by the flow rate ratio used during the formation of the amorphous layer (II) changed from SiH4 gas to C 2H4 gas. With each of those made in this way Imaging elements were followed by the steps described in Example 116 through FIG Transmission repeated about 50,000 times, whereupon an evaluation of the image quality is carried out where the results shown in Table C18 were obtained.

Example 128 imaging elements were each made the same Procedure as prepared in Example 116, but the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (II) varied by the flow rate ratio used during the formation of the amorphous layer (II) changed from SiH4-Gas'SiF4-Gas: C2H4-Gas. With each of those made in this way Imaging elements were the imaging, Repeated development and purification steps about 50,000 times, whereupon the evaluation the image quality with the results shown in Table C19 were obtained.

Example 129 imaging members were made using the same procedure produced as in Example 116, but with the layer thickness of the amorphous layer (II) has been changed. For each sample, the imaging, Repeat development and purification steps using those shown in Table C20 Results were obtained.

Example 130 Using the manufacturing apparatus shown in FIG was placed on a cylindrical aluminum substrate under the conditions shown in Table D1 specified conditions, a first amorphous layer (I) is formed while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas in the course of the layer formation in accordance with the curve of the rate of change shown in FIG the gas flow rate ratio was changed, and then became of the first amorphous layer (I) under the conditions given in Table D1 a second amorphous layer (II) is formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 131 Using the manufacturing apparatus shown in FIG a first amorphous layer was formed under the conditions given in Table D2 (I) formed while that % Gas flow rate ratio from GeH4 / He gas to SiF4 / He gas with the time course of film formation in accordance with the graph of the rate of change of the gas flow rate ratio shown in Fig. 13 was changed and otherwise the same conditions as in Example 130 were applied were, and then similarly as in Example 130, a second amorphous layer (II) educated. In this way, an imaging member for electrophotographic Purposes received.

Using the obtained imaging member, Image receiving materials made of paper by the same process and under the same Conditions as in example 130 images produced, with a very clear image quality was obtained.

Example 132 Using the manufacturing apparatus shown in FIG layers were formed under the conditions shown in Table D3 while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 130 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in example 130 images produced, with a very clear image quality was obtained.

Example 133 Using the manufacturing apparatus shown in FIG layers were formed under the conditions given in Table D4 while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 130 were used. That way it was obtained an imaging member for electrophotographic use.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 30 images are generated, with a very clear image quality was obtained.

Example 134 Using the manufacturing apparatus shown in FIG became an imaging member under the conditions shown in Table D5 formed for electrophotographic purposes while the gas flow rate ratio from GeH / He gas to SiH / He gas in the course of 4 4. the layer formation in accordance with the gas flow rate change rate curve shown in Fig. 16 was changed and otherwise the same conditions as in Example 130 were used.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in example 130 images produced, with a very clear image quality was obtained.

Example 135 Using the manufacturing apparatus shown in FIG became an imaging member under the conditions shown in Table D6 formed for electrophotographic purposes while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the graph of the rate of change of the gas flow rate ratio shown in Fig. 17 was changed and otherwise the same conditions as in Example 130 were used became.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in example 130 images produced, with a very clear image quality was obtained.

Example 136 Using the manufacturing apparatus shown in FIG became an imaging member under the conditions shown in Table D7 formed for electrophotographic purposes while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in time, the course of the layer formation is consistent with the graph of the rate of change of the gas flow rate ratio shown in FIG. 18 was changed and otherwise the same conditions as in Example 130 were used became.

Using the obtained imaging member, Image receiving materials made of paper by the same process and under the same Conditions as in example 130 images produced, with a very clear image quality was obtained.

Example 137 Under the same conditions as in Example 130, wherein however instead of SiH4 / He gas Si2H6 / He gas was used and the conditions were modified in the manner shown in Table D8, became an imaging member manufactured.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in example 130 images produced, with a very clear image quality was obtained.

Example 138 Under the same conditions as in Example 130, wherein however instead of SiH4 / He gas SiF4 / He gas was used and the conditions were modified in the manner shown in Table D9, became an imaging member manufactured.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in example 130 images produced, with a very clear image quality was obtained.

Example 139 Under the same conditions as in Example 130, however, instead of SiH4 / He gas (SiH4 / He + SiF4 / He) gas was used and the conditions were changed in the manner shown in Table D10, became a Imaging element produced.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in example 130 images produced, with a very clear image quality was obtained.

Example 140 In Examples 130 to 139, the conditions were for the production of the second involved in the construction of the first amorphous layer (I) Layer modified as shown in Table D11, otherwise the same Conditions as in these examples were used. In this way, imaging elements became manufactured for electrophotographic purposes.

Using the prepared imaging members, after the same procedure and under the same conditions as in Example 130 images to obtain the results shown in Table DIIA.

Example 141 In Examples 130 to 139, the conditions were for the production of the second involved in the construction of the first amorphous layer (I) Layer modified as shown in Table D12, otherwise the same Conditions as in these examples were used. In this way, imaging elements became manufactured for electrophotographic purposes.

Using the prepared imaging members, after the same procedure and under the same conditions as in Example 130 images to obtain the results shown in Table D12A.

Example 142 By means of a manufacture as described in Example 30 Imaging element for electrophotographic Purposes were transferred under the same toner image forming conditions as in Example 130 Generated toner images, however, as a light source for the generation of electrostatic Charge images instead of a tungsten lamp using a semiconductor laser (10 mW) of the GaAs system at 810 nm was used. The image quality of the transferred toner images was which was found to be clear, high-quality images which are excellent Showed resolution and good reproducibility of reproduction of semitones, could be obtained.

Example 143 imaging members for electrophotographic use (72 samples; samples No. 12-? OlD to 12-208D, 12-301D to 12-308D, ...., 12-lOOlD to 12-1009D) were carried out under the same conditions and using the same procedure as in Examples 131 to 139, but the conditions for the preparation of the amorphous layer (II) in the manner shown in Table D13 modified.

The obtained imaging members were individually placed in a charge exposure tester placed in, corona charged at -5.0 kV for 0.2 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and the exposure was 1.0 lux. s carried out. The latent charge image was with a positively charged developer containing toner and carrier and transferred to ordinary or uncoated paper. It was determined, that the transmitted image was very good. To remove the untransferred toner, which remained on the imaging member for electrophotographic use cleaning was carried out with a rubber blade. These steps were repeated 100,000 times or more, but there was no deterioration in any case of the images observed.

The results of the overall assessment of the image quality of the transmitted Pictures and the evaluation, the durability with the repeated, continuous Usage are listed in Table D13A.

Example 144 imaging members were each made the same Procedure as in Example 130, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (II) changed by the area ratio applied during the formation of the amorphous layer (II) changed from silicon wafer to graphite. With each of those made in this way Imaging elements were the imaging, Repeated development and purification steps about 50,000 times, whereupon the evaluation the image quality with the results shown in Table D14 were obtained.

Example 145 imaging members were each made the same Procedure as in Example 130, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (I1) varied by the flow rate ratio used during the formation of the amorphous layer (11) changed from SiH4 gas to C 2H4 gas. With each of those made in this way Imaging members followed the steps described in Example 130 through Transmission repeated about 50,000 times, whereupon an evaluation of the image quality is carried out where the results shown in Table D15 were obtained.

Example 04f> Imaging elements were each made the same Procedure as in Example 130, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (II) varied by the flow rate ratio used during the formation of the amorphous layer (11) changed from SiH4 gas: SiF4 gas: C2H4 gas. With each of those made in this way Imaging elements were the imaging, Repeated development and purification steps about 50,000 times, whereupon the evaluation the image quality at which the results shown in Table D16 were obtained.

Example 147 Imaging members were made using the same procedure produced as in example 130, but with the layer thickness of the amorphous layer (II) has been changed. For each sample, the imaging, Repeat development and purification steps, being those shown in Table D17 Results were obtained.

Example 148 Using the manufacturing apparatus shown in FIG were on a cylindrical aluminum support under the table El specified conditions layers formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at +5.0 kV for 0.3 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a negatively charged toner and toner carrier became containing developer cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging +5.0 kV was transferred to a paper image receiving material became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 149 Using the manufacturing apparatus shown in FIG layers were formed as in Example 148, but the conditions in modified as shown in Table E2, using an imaging element for electrophotographic purposes.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 148 but with negative polarity of the corona charge and with a positively charged developer, images are produced, being very clear Image quality was obtained.

Example 150 Using the manufacturing device shown in FIG layers were formed as in Example 148, but the conditions in modified as shown in Table E3, with an imaging element for electrophotographic purposes.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 148 images produced, with a very clear image quality was obtained.

Example 151 In exactly the same manner as in Example 148 were made Layers formed, however, the germanium atom content was in the first layer changed by changing the flow rate ratio of GeH4 / He-Cas to SiH4 / He gas was changed as shown in Table E4. In this way, image-forming elements were each made manufactured for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as generated in Example 14S images, being those shown in Table E4 Results were obtained.

Example 152 In exactly the same manner as in Example 148 Layers formed, but the layer thickness of the first layer was as shown in the table E5 shown changed. on in this way each became image-forming elements manufactured for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as generated in Example 148 images, being those shown in Table ES Results were obtained.

Example 153 Using the manufacturing apparatus shown in FIG were on a cylindrical support made of aluminum as in Example 148 layers but the first amorphous layer (I) among those shown in Table E6 Conditions was formed. In this way, an imaging element for received electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at +5.0 kV for 0.3 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a negatively charged toner and toner carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging +5.0 kV was transferred to a paper image receiving material became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of halftones.

Example 154 Using the manufacturing apparatus shown in FIG were on a cylindrical support made of aluminum as in Example 148 layers but the first amorphous layer (I) is among those shown in Table E7 Conditions was formed. In this way, an imaging element for received electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at +5.0 kV for 0.3 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a negatively charged toner and toner carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging +5.0 kV was transferred to a paper image receiving material became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 155 Using the manufacturing apparatus shown in FIG were on a cylindrical support made of aluminum as in Example 148 layers formed, however, the first amorphous layer (I) among those shown in Table E8 Conditions was formed. In this way, an imaging element for received electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at +5.0 kV for 0.3 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a negatively charged toner and toner carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging +5.0 kV was transferred to a paper image receiving material became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 156 Using the manufacturing apparatus shown in FIG layers were formed as in Example 148, but the conditions in modified as shown in Table E9, using an imaging element for electrophotographic purposes.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 148 images produced, with a very clear image quality was obtained.

Example 157 Using the manufacturing apparatus shown in FIG layers were formed as in Example 148, but the conditions in modified as shown in Table E10, using an imaging element for electrophotographic purposes.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 148 images produced, with a very clear image quality was obtained.

Example 158 Using one prepared as described in Example 48 Imaging members for electrophotographic use were made among the same Toner image generation conditions as in Example 148 generated transferred toner images, however, being used as a light source for the generation more electrostatic Charge images instead of a tungsten lamp using a semiconductor laser (10 mW) of the GaAs system at 810 nm was used. The image quality of the transferred toner images became which was found to be clear, high-quality images which are excellent Showed resolution and good reproducibility of reproduction of semitones, could be obtained.

Example 159 Electrophotographic imaging members (72 samples; Sample No. 12-201E to 12-208E, 12-301E to 12-308E, 12-601E to 12-608E, . . . , and 12-lOOlE to 12-1008E) were under the same conditions and after prepared by the same procedure as in Examples 149, 150 and 153 to 157, however, the conditions for the production of the amorphous layer (II) in the modified in the manner shown in Table Ell.

The obtained imaging elements were placed one by one in a copier placed in, corona charged at +5.0 kV for 0.2 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and the exposure was carried out at 1.0 lx.s. The latent charge image was with a negatively charged developer containing toner and carrier and transferred to ordinary or uncoated paper. It was determined, that the transmitted image was very good. To remove the untransferred toner, which remained on the image generation element for lek trofo togrof purposes cleaning was carried out with a rubber blade. These steps were repeated 100,000 times or more, but there was no deterioration in any case of the images observed.

The results of the overall assessment of the image quality of the transmitted Pictures and the evaluation of the durability in the repeated, continuous Usage are listed in Table E12.

Example 160 imaging members were each made the same Procedure as prepared in Example 148, except that the atomization procedure was used and the ratio of the content of silicon atoms to the content of Carbon atoms in the amorphous layer (II) changed by that during formation the amorphous layer (II) applied area ratio of silicon wafer Graphite was changed. In any of the imaging members thus produced The imaging, developing, and cleaning steps described in Example 148 were followed repeated about 50,000 times, whereupon the evaluation of the image quality was carried out, where the results shown in Table E13 were obtained.

Example 161 imaging members were each made the same Procedure as in Example 148, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (II) varied by the flow rate ratio used during the formation of the amorphous layer (II) changed from SiH4 gas to C 2H4 gas. With each of those made in this way Imaging members followed the steps described in Example 148 through Transmission repeated about 50,000 times, whereupon an evaluation of the image quality is carried out where the results shown in Table E14 were obtained.

Example 162 imaging members were each made the same Procedure as in Example 148, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (II) changed by the flow rate ratio used during the formation of the amorphous layer (II) changed from SiH4 gas: SiF4 gas: C2H4 gas. With each of those made in this way Imaging elements were the imaging, Repeated development and purification steps about 50,000 times, whereupon the evaluation the image quality with the results shown in Table EIS were obtained.

Example 163 Imaging members were made using the same procedure produced as in Example 148, but with the layer thickness of the amorphous layer (II) has been changed. For each sample, the imaging, Repeat development and purification steps using those shown in Table E16 Results were obtained.

Example 164 Using the manufacturing apparatus shown in FIG was on a cylindrical Indian layer support made of aluminum under the table F1 a first amorphous layer (I) is formed while the Gas flow rate ratio of GeH4 / He gas to SiH4 / He gas over time of film formation in accordance with the rate of change curve shown in FIG of the gas flow rate the relationship has been changed, and then a second became amorphous under the conditions shown in Table F1 Layer (II) is formed. Thus, an imaging member for electrophotographic Purposes received.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at -5.0 kV for 0.3 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a positively charged toner and carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging -5.0 kV was transferred to a paper image receiving material, became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 165 Using the manufacturing apparatus shown in FIG became an imaging member for electrophotographic use as in Example 164 formed, but a first was formed under the conditions given in Table F2 amorphous layer (I) is formed while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the curve of the rate of change shown in FIG. speed of the gas flow rate ratio was changed and otherwise the the same conditions as in Example 164 were used.

Using the obtained imaging element, Image receiving materials made of paper by the same method and under the same Conditions as in Example 164 images produced, with a very clear image quality was obtained.

Example 1hh Using the manufacturing device shown in FIG became an imaging member for electrophotographic use as in Example 164 formed, but a first was formed under the conditions given in Table F3 amorphous layer (I) is formed while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the gas flow rate ratio change rate curve shown in Fig. 14 was changed and otherwise the same conditions as in Example 164 were applied became.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 164 images produced, with a very clear image quality was obtained.

Example 167 Using the manufacturing apparatus shown in FIG became an imaging member for electrophotographic use as in Example 164 formed, but under the conditions given in Table F4 a first amorphous layer (I) is formed, while the gas flow speed ratio from GeH4 / je gas to SiH4 / He gas in the course of the film formation in accordance with the curve of the rate of change of the gas flow rate ratio shown in Fig. 15 was changed and otherwise the same conditions as in Example 164 were applied became.

Using the obtained imaging member, aud Image receiving materials made of paper by the same method and under the same Conditions as in Example 164 images produced, with a very clear image quality was obtained.

Example 168 Using the manufacturing apparatus shown in FIG became an imaging member for electrophotographic use as in Example 164 formed, but a first was formed under the conditions given in Table F5 amorphous layer (I) is formed while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the graph of the rate of change of the gas flow rate ratio shown in Fig. 22 was changed and otherwise the same conditions as in Example 164 were applied became.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 164 images produced, with a very clear image quality was obtained.

Example 69 Using the manufacturing apparatus shown in FIG became an imaging member for electrophotographic Purpose formed, however, under the conditions given in Table F6, a first amorphous layer (I) formed while the Cas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the gas flow rate ratio change rate curve shown in Fig. 25 was changed and otherwise the same conditions as in Example 164 were applied became.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 164 images produced, with a very clear image quality was obtained.

Example 170 Using the manufacturing apparatus shown in FIG. 11 became an imaging member for electrophotographic use as in Example 164 formed but a first was formed under the conditions given in Table F7 amorphous layer (I) is formed while the Cas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the curve shown in Fig. 18 of the flow rate of the gas flow rate ratio was changed and otherwise the same conditions as in Example 164 were applied became.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 164 images produced, with a very clear image quality was obtained.

Example 171 Under the same conditions as in Example 164 where however instead of SiH4 / He gas Si2H6 / He gas was used and the conditions were modified in the manner shown in Table F8, became an imaging member manufactured.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 164 images produced, with a very clear image quality was obtained.

Example 172 Under the same conditions as in Example 164 where however instead of SiH4 / He gas SiF4 / He gas was used and the conditions were changed in the manner shown in Table F9, became an imaging member manufactured.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 164 images produced, with a very clear image quality was obtained.

Example 173 Under the same conditions as in Example 164 where however, instead of SiH / He gas (SiH4 / He + SiF4 / He) -4 4 4 gas was used and the conditions were changed in the manner shown in Table FlO, became a Imaging element produced.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 164 images produced, with a very clear image quality was obtained.

Example 174 In Examples 164 to 173, the conditions were established modified for the production of the third layer as shown in Table F11, otherwise the same conditions as in these examples were used. In this way, imaging members for electrophotographic use were made.

Using the prepared imaging members, after the same procedure and under the same conditions as in Reispiell64 pictures and the results shown in Table F1A were obtained.

Example 175 In Examples 164 to 173, the conditions were established modified for the production of the third layer as shown in Table F12, otherwise the same conditions as in these examples were used. In this way, imaging members for electrophotographic use were made.

Using the prepared imaging members were according to the same procedure and under the same conditions as in example64 Images were generated with the results shown in Table F12A.

Example 176 Using the manufacturing apparatus shown in FIG became an imaging member under the conditions shown in Table F13 for electrophotographic Purposes formed while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas and the gas flow rate ratio of NO gas to SiH4 / He gas in the course of the film formation in accordance with the The graph of the rate of change of the gas flow rate ratio shown in Fig. 26 were changed and otherwise the same conditions as in Example 164 were applied became.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 164 images produced, with a very clear image quality was obtained.

Example 177 Using the manufacturing apparatus shown in FIG became an imaging member under the conditions shown in Table F14 formed for electrophotographic purposes while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas and the gas flow rate ratio of NO gas to SiH4 / He gas in the course of the film formation in accordance with the in Fig. 27 of the rate of change of the gas flow rate ratio were changed and otherwise the same conditions as in Example 164 were applied became.

Using the obtained imaging element, I i Paper care materials are made using the same process and under the same conditions Conditions as in Example 164 images produced, with a very clear image quality was obtained.

Example 178 Means as described in Examples 164-173 of manufactured imaging members for electrophotographic purposes have been shown below toner images transferred under the same toner image forming conditions as in Example 164 generated, but as a light source for the generation of electrostatic charge images instead of the tungsten lamp, a semiconductor laser (10 mW) of the GaAs system at 810 nm was used. The image quality of the transferred toner images was evaluated It was found to be clear, high quality images having excellent resolution and showed good reproducibility of reproduction of halftones could become.

Example 179 Electrophotographic imaging members (72 samples; Sample Nos. 12-201F to 12-20FF, 12-301F to 12-308F, 12-1OOlF to 12-1009F ) were made under the same conditions and using the same procedure as in the Examples 165-173 were made but the conditions for making were of the amorphous layer (II) as shown in Table F15.

The obtained imaging members were individually placed in a charge exposure tester placed in, corona charged at -5.0 kV for 0.2 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and the exposure was carried out at 1.0 lx.s. The latent charge image was with a positively charged developer containing toner and carrier and transferred to ordinary or uncoated paper. It became found that the transmitted image was very good. To remove the untransferred Toner left on the imaging member for electrophotographic use cleaning was carried out with a rubber blade. These steps were repeated 100,000 times or more, but there was no deterioration in any case of the images observed.

The results of the overall assessment of the image quality of the transmitted Pictures and the evaluation of the durability in the repeated, continuous Usage are listed in table kl5 ...

Example 180 imaging members were each made the same Procedure as prepared in Example 164, except that the atomization procedure was used and the ratio of the content of silicon atoms to the content of Carbon atoms in the amorphous layer (II) changed by that during formation the amorphous layer (II) applied area ratio of silicon wafer to graphite was changed. In any of the imaging members thus produced The imaging, development, and cleaning steps described in Example 164 were followed repeated about 50,000 times, whereupon the evaluation of the image quality was carried out, where the results shown in Table F16 were obtained.

Example 181 imaging members were each made the same Procedure as in Example 164, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (11) varied by the flow rate ratio used during the formation of the amorphous layer (II) changed from SiH4 gas to C 2H4 gas. With each of those made in this way Imaging members followed the steps described in Example 164 through Transmission repeated about 50,000 times, whereupon an evaluation of the image quality is carried out where the results shown in Table F17 were obtained.

Example 182 imaging members were each made the same Procedure as in Example 164, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (II) changed by the flow rate used during the formation of the amorphous layer (II) changed from SiH4 gas: SiF4 gas: C2H4 gas. With each of those made in this way Imaging elements were the imaging, Repeated development and purification steps about 50,000 times, whereupon the evaluation the image quality with the results shown in Table F18 were obtained.

Example 183 imaging elements were made according to the same method produced as in Example 164, but with the layer thickness of the amorphous layer (II) has been changed. For each sample, the imaging, Repeated development and purification steps using those shown in Table F19 Results were obtained.

Example 184 Using the methods described in Fie. 11 shown manufacturing device was on a cylindrical support made of aluminum under the table G1 a first amorphous layer (I) is formed while the Gas flow rate ratio of GeH4 / He gas to SiH4 / l-le gas over time of film formation in accordance with the rate of change curve shown in FIG the gas flow rate ratio was changed, and then became under a second amorphous layer (II) is formed under the conditions given in Table G1. Thus, there was obtained an imaging member for electrophotographic use obtain.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at +5.0 kV for 0.3 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a negatively charged toner and toner carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging When t5.0 kV was transferred to a paper image receiving material, it became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 185 Using the manufacturing apparatus shown in FIG became an imaging member for electrophotographic use as in Example 184 formed, but a first was formed under the conditions given in Table G2 amorphous layer (I) is formed while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the graph of the rate of change of the gas flow rate ratio shown in FIG was changed and otherwise the same conditions as in Example 184 were applied became.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 184 images are generated, with a very clear image quality was obtained.

Example 186 Using the manufacturing apparatus shown in FIG became an imaging member for electrophotographic use as in Example 184 formed, however, was under the conditions given in Table G3 a first amorphous layer (I) is formed while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the graph of the rate of change of the gas flow rate ratio shown in Fig. 14 was changed and otherwise the same conditions as in Example 184 were applied became.

Using the obtained imaging member, Paper receiving materials by the same process and under the same Conditions as in Example 184 images are generated, with a very clear image quality was obtained.

Example 1a7 Using the manufacturing apparatus shown in FIG became an imaging member for electrophotographic use as in Example 184 formed, but a first was formed under the conditions given in Table G4 amorphous layer (I) is formed while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the graph of the rate of change of the gas flow rate ratio shown in Fig. 21 was changed and otherwise the same conditions as in Example 184 were applied became.

Using the obtained imaging member, Billing materials made of paper by the same process and under the same Conditions as in Example 184 images are generated, with a very clear image quality was obtained.

Example 188 Using the manufacturing apparatus shown in FIG became an imaging member for electrophotographic use as in Example 184 formed, but a first was formed under the conditions given in Table G5 amorphous layer (I) is formed while the gas flow rate ratio from GeH4 / He-Cas to SiH4 / He gas in the course of the layer formation in accordance with each other with the graph of the rate of change of the gas flow rate ratio shown in Fig. 22 was changed and otherwise the same conditions as in Example 184 were applied became.

Using the obtained imaging member, Image receiving materials made of paper by the same process and under the same Conditions as in Example 184 Dilder produced, with a very clear picture quality was obtained.

Example 189 Using the manufacturing apparatus shown in FIG became an imaging member for electrophotographic use as in Example 184 formed, but a first was formed under the conditions given in Table G6 amorphous layer (I) is formed while the gas flow rate ratio from GeH4 / Fie gas to SiH4 / He gas in the course of the film formation in accordance with each other with the curve of increasing rate of gas flow rate ratio shown in Fig. 23 was changed and otherwise the same conditions as in Example 184 were applied became.

Using the obtained imaging member, Image receiving materials made of paper by the same process and under the same conditions as in example 184 images are generated, one being very clear picture quality was obtained.

Example 190 Using the manufacturing apparatus shown in FIG became an imaging member for electrophotographic use as in Example 184 formed, but a first was formed under the conditions given in Table G7 amorphous layer (I) is formed while the gas flow rate ratio from GeH4 / He- (8, as to SiH / He gas in the 4 time course of layer formation in agreement with the gas flow rate ratio change rate curve shown in Fig. 24 was changed and otherwise the same conditions as in Example 184 were applied became.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 184 images are generated, with a very clear image quality was obtained.

Example 191 Under the same conditions as in Example 184 where however, instead of SiH4 / He gas, Si 2H6 / He gas was used and the conditions were modified in the manner shown in Table OB, became an imaging element manufactured.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 184 images are generated, with a very clear image quality was obtained.

Example 192 Under the same conditions as in Example 184 where however instead of SiH4 / He gas SiF4 / He gas was used and the conditions were modified in the manner shown in Table G9, became an imaging member manufactured.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 184 images are generated, with a very clear image quality was obtained.

Example 193 Under the same conditions as in Example 184 where however, instead of SiH / He gas (SiHq / He + SiF / He) -4 4 4 gas was used and the conditions were changed in the manner shown in Table C10, became a Imaging element produced.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 184 images are generated, with a very clear image quality was obtained.

Example 194 Using the manufacturing device shown in FIG became an imaging member for electrophotographic use as in Example 184 formed, however, was placed on a cylindrical aluminum support a first amorphous layer (I) is formed under the conditions specified in Table G11, while the gas flow rate ratio of GeH4 / He gas to SiH4 / He gas with the lapse of time of film formation in accordance with that shown in FIG Gas flow rate ratio change rate curve was changed.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at +5.0 kV for 0.3 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a negatively charged toner and toner carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging +5.0 kV was transferred to a paper image receiving material became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 195 In Example 194, during the preparation of the first Layer the flow rate ratio of B 2H6 to (SiH4 + GeH4) and during of making the second layer, the flow rate ratio of B2H6 changed to SiH4 in the manner specified in Table G12, otherwise the same conditions as in Example 194 were used. That way were each imaging member for electrophotographic use (Sample No. 1201G to 1208G).

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as generated in Example 194 images, being those shown in Table G12 Results were obtained.

Example 196 In Examples 184 to 193, the conditions were for the production of the second layer in that shown in Tables G13 and Gl4 Modified manner, otherwise the same conditions as in these examples were applied. In this way, imaging members for electrophotographic Purposes (sample No. 1301C to 1310G or 1401C to 1410G).

Using the prepared imaging members, after the same procedure and under the same conditions as in Example 184 images to obtain the results shown in Tables C13A and G14A.

Example 197 Using one prepared as described in Example 84 Electrophotographic imaging members were among the same Toner image generation conditions as in Example 184 generated transferred toner images, but instead as a light source for the generation of electrostatic charge images The tungsten lamp uses a semiconductor laser (10 mW) of the GaAs system at 810 nm became. The image quality of the transferred toner images was evaluated, whereby revealed that clear high quality images that have excellent resolution and a showed good reproducibility of reproducing halftones could be obtained.

Example 198 Electrophotographic imaging members (72 samples; Sample Nos. 12-201G to 12-208G, 12-301G to 12.308G, ..., 12-1001G to 12-1009G) were carried out under the same conditions and using the same procedure as in Examples 185 to 193, but the conditions for the preparation of the amorphous layer (II) in the manner shown in Table G15 modified.

The obtained imaging members were individually placed in a charge exposure tester placed in, corona charged at +5.0 kV for 0.2 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and the exposure was carried out at 1.0 lx.s. The latent charge image was with a negatively charged developer containing toner and carrier and transferred to ordinary or uncoated paper. It was determined, that the transmitted image was very good. To remove the untransferred toner, the on the imaging member for electrophotographic use was left, cleaning was carried out with a rubber blade. These steps were repeated 100,000 times or more, but in no case was it repeated a deterioration in the images was observed.

The results of the overall assessment of the image quality of the transmitted Pictures and the evaluation of the durability in the repeated, continuous Usage are listed in Table G15.

Example IAQ imaging elements were each made according to the same Procedure as prepared in Example 184, except that the atomization procedure was used and the ratio of the content of silicon atoms to the content of Carbon atoms in the amorphous layer (II) changed by that during formation the amorphous layer (II) applied area ratio of silicon wafer to graphite was changed. In any of the imaging members thus produced The imaging, development, and cleaning steps described in Example 184 were followed repeated about 50,000 times, whereupon the evaluation of the image quality was carried out, where the results shown in Table G16 were obtained.

Example 200 imaging members were each made the same Procedure as in Example 184, except that the ratio of the contents was of silicon atoms to that Content of carbon atoms in the amorphous Layer (II) changed by the fact that during the formation of the amorphous layer (II) applied flow rate ratio of SiH4 gas to C 2H4 gas changed became. In each of the imaging members thus prepared, repeat the steps described in example 184 about 50,000 times until the transfer, whereupon an evaluation of the image quality was carried out using the values shown in Table Results shown in G17 were obtained.

Example 201 Image forming elements were each made the same Procedure as in Example 184, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (II) varied by the flow rate ratio used during the formation of the amorphous layer (II) changed from SiH4 gas: SiF4 gas: C2H4 gas. With each of those made in this way Imaging elements were the imaging, Repeated development and purification steps about 50,000 times, whereupon the evaluation the image quality with the results shown in Table G18 were obtained.

Example 202 imaging members were made using the same procedure produced as in Example 184, but with the layer thickness of the amorphous layer (II) has been changed. For each sample, the imaging, Repeat development and purification steps, being those shown in Table G19 Results were obtained.

Example 203 Using the manufacturing apparatus shown in FIG was placed on a cylindrical aluminum support under the conditions shown in Table H1 specified conditions, a first amorphous layer (I) is formed while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the layer formation in agreement with the graph of the rate of change of the gas flow rate ratio shown in Fig. 19 was changed, and then was under the conditions given in Table H1 a second amorphous layer (II) is formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, corona charged at +5.0 kV for 0.3 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately afterwards, a negatively charged toner and toner carrier became containing developer in cascade onto the surface of the imaging member allowed to impinge, a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging +5.0 kV was transferred to a paper image receiving material became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 204 Using the manufacturing apparatus shown in FIG. 11 became an imaging member under the conditions shown in Table H2 formed for electrophotographic purposes while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the graph of the rate of change of the gas flow rate ratio shown in Fig. 20 was changed and otherwise the same conditions as in Example 203 were applied became.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 203 images produced, with a very clear image quality was obtained.

Example 205 Using the manufacturing apparatus shown in FIG. 11 became an imaging member under the conditions shown in Table Ha formed for electrophotographic purposes while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the graph of the rate of change of the gas flow rate ratio shown in Fig. 14 was changed and otherwise the same conditions as in Example 203 were applied became.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 203 images produced, with a very clear image quality was obtained.

Example 206 Using the manufacturing apparatus shown in FIG. 11 became an imaging member under the conditions shown in Table H4 formed for electrophotographic purposes while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the layer formation in agreement with the graph of the rate of change of the gas flow rate ratio shown in Fig. 21 was changed and otherwise the same conditions as in Example 203 were applied became.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 203 images produced, with a very clear image quality was obtained.

Example 2C? By means of the manufacturing device shown in FIG became an imaging member under the conditions shown in Table H5 formed for electrophotographic purposes while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the graph of the rate of change of the gas flow rate ratio shown in Fig. 22 was changed and otherwise the same conditions as in Example 203 were applied became.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 203 images produced, with a very clear image quality was obtained.

Example 208 Using the manufacturing apparatus shown in FIG became an imaging member under the conditions shown in Table H6 formed for electrophotographic purposes while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the graph of the rate of change of the gas flow rate ratio shown in FIG. 23 was changed and otherwise the same conditions as in Example 203 were applied became.

Using the obtained imaging member, Image receiving material: paper made using the same process and under the same Conditions as in Example 203 images produced, with a very clear image quality was obtained.

Example 209 Using the manufacturing apparatus shown in FIG became an imaging member under the conditions shown in Table H7 formed for electrophotographic purposes while the gas flow rate ratio from GeH4 / He gas to SiH4 / He gas in the course of the film formation in accordance with each other with the curve of the rate of change of the gas du rchfl shown in FIG external speed ratio has been changed and otherwise the same conditions as used in Example 203.

Using the obtained imaging member, Image receiving materials made of paper by the same process and under the same Conditions as in Example 203 images produced, with a very clear image quality was obtained.

Example 210 Under the same conditions as in Example 203 where however, instead of SiH4 / He gas, Si 2H6 / He gas was used and the conditions were modified in the manner shown in Table H8, became an imaging member manufactured.

Using the obtained imaging member, Image receiving materials made of paper by the same process and under the same Conditions as in Example 203 images produced, with a very clear image quality was obtained.

Example 211 Under the same conditions as in Example 203 where however instead of SiH4 / He gas SiF4 / He gas was used and the conditions were modified in the manner shown in Table Ft13, became an imaging member manufactured.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 203 images produced, with a very clear image quality was obtained.

Example 212 Under the same conditions as in Example 203 where however, instead of SiH / He gas (SiHq / He + SiF4 / He) -4 4 4 gas was used and the conditions were changed in the manner shown in Table Hlo, became a Imaging element produced.

Using the obtained imaging member, Image receiving materials made of paper by the same method and under the same Conditions as in Example 203 images produced, with a very clear image quality was obtained.

Example, 213 Using the manufacturing apparatus shown in FIG. 11 was on a cylindrical support made of aluminum under the in Table III specified conditions, a first amorphous layer (I) is formed while the gas flow rate ratio from GeH4 / He gas to SiHq / le gas in the course of the layer formation in accordance with the graph of the rate of change of the gas flow rate ratio shown in Fig. 19 was changed, and then under the conditions given in Table Fi11 a second amorphous layer (II) is formed. Thus became an imaging member obtained for electrophotographic purposes.

The obtained imaging member was placed in a charge exposure test apparatus brought in, subjected to a corona charge at * 5.0 kV for 0.3 s and immediately then exposed imagewise. A tungsten lamp was used as the light source, and exposure was measured using a translucent test card at 2 lx.s carried out.

Immediately thereafter, a negatively charged toner and toner carrier became containing developer in cascade onto the surface of the imaging member allowed to hit, whereby a good toner image was obtained on this surface. As the toner image on the imaging member by corona charging +5.0 kV was transferred to a paper image receiving material became clear Get a high density image that has excellent resolution and a showed good reproducibility of reproduction of semitones.

Example 214 In Example 213, during the preparation of the first Layer the flow rate ratio of B2H6 to (SiH4 + GeH4) and during of making the second layer, the flow rate ratio of B2H6 changed to SiH4 in the manner given in Table H12, otherwise the same conditions as in Example 213 were used. That way were each received imaging members for electrophotographic purposes.

Using the obtained imaging members, Image receiving materials made of paper by the same method and under the same Conditions as in Example 213 formed with good results.

Example 215 In Examples 203 to 212, the conditions were for the production of the second layer in the manner shown in Table H13, otherwise the same conditions as in these examples were used. In this way imaging members for electrophotographic use were made.

Using the manufactured imaging elements according to the same procedure and under the same conditions as in Example 203 Images were generated with the results shown in Table i13A.

Example 216 In Examples 203 to 212, the conditions for the manufacture of the second layer modified as shown in Table lfl4, otherwise the same conditions as in these examples were used. In this way, imaging members for electrophotographic use were made.

Using the prepared imaging members, after the same procedure and under the same conditions as in Example 203 images erzeup, t, whereby the results shown in Table H14 were obtained.

Example, 217 Using a prepared as described in Example 203 Electrophotographic imaging members were among the same Toner image generation conditions as in Example 203 generated transferred toner images, but instead as a light source for the generation of electrostatic charge images The tungsten lamp uses a semiconductor laser (10 mW) of the GaAs system at 810 nm became. The image quality of the transferred toner images was evaluated, whereby revealed that clear high quality images that have excellent resolution and a showed good reproducibility of reproducing halftones could be obtained.

Example: 218 imaging members for electrophotographic use (72 samples; sample No. 12-201H to 12-208H, 12-301H to 12-308H, ...., 12-lOOlH to 12-100011) were carried out under the same conditions and using the same procedure as in Examples 204 to 212, but the conditions for the preparation of the amorphous layer (II) in the manner shown in Table H15 modified.

The obtained imaging members were individually placed in a charge exposure tester h, corona charged at 45.0 kV for 0.2 s, and immediately then exposed imagewise. A tungsten lamp was used as the light source, and the exposure was carried out at 1.0 lx.s. The latent charge image was with a negatively charged developer containing toner and carrier and transferred to ordinary or uncoated paper. It was determined, that the transmitted image was very good. To remove the untransferred toner, that remained on the imaging member for electrophotographic use cleaning was carried out with a rubber blade. These steps were repeated 100,000 times or more, but there was no deterioration in any case of the images observed.

The results of the overall assessment of the image quality of the transmitted Pictures and the evaluation of the durability in the repeated, continuous Usage are listed in table tUG.

Example 21 ') Imaging elements were each made the same Procedure prepared as in Example 203, but the atomization procedure was used and the ratio of the content of silicon atoms to the content of Carbon atoms in the amorphous layer (II) changed by that during formation the amorphous layer (II) applied area ratio of silicon wafer to graphite was changed. In any of the imaging members thus produced The imaging, development, and cleaning steps described in Example 203 were followed repeated about 50,000 times, whereupon the evaluation of the image quality was carried out, where the results shown in Table ifl7 were obtained.

Example 220 imaging members were each made the same Procedure as in Example 203, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (II) varied by the flow rate ratio used during the formation of the amorphous layer (II) changed from H4 gas to C 2H4 gas. With each of those made in this way Imaging members followed the steps described in Example 203 through Transmission repeated about 50,000 times, whereupon an evaluation of the image quality is carried out where the results shown in Table H18 were obtained.

Example 221 imaging members were each made the same Procedure as in Example 203, except that the ratio of the contents was of silicon atoms to the content of carbon atoms in the amorphous layer (II) varied by the flow rate ratio used during the formation of the amorphous layer (II) changed from SiH4 gas: SiF4 gas: C2H4 gas. With each of those made in this way Imaging elements were the imaging, Repeated development and purification steps about 50,000 times, whereupon the evaluation the image quality with the results shown in Table H19 were obtained.

Example 222 Imaging members were made using the same procedure produced as in Example 203, but with the layer thickness of the amorphous layer (II) has been changed. For each sample, the imaging, Repeat development and purification steps, being those shown in Table H20 Results were obtained.

The general film-forming conditions used in the above examples of the invention are given below: temperature of the support: for the layers containing germanium atoms (Ge) ... about 200 ° C; for the layers in which no germanium atoms (Ge) are contained ... about 200 ° C; Discharge frequency: 13.56 MHz; Internal pressure in the reaction chamber during the reaction: 0.4 mbar TABLE 1A Stratified Layer- Layer used flow rate flow rate discharge rate speed structure gases ratio power thickness (Standard cm³ / min) speed (nm / s) (W / cm²) (µm) GeH4 / SiH4 = 1 SiH4 / He = 0.05 SiH4 + GeH4 = 50 First 0.18 0.5 3 layer GeH4 / He = 0.05 Second SiH4 / He = 0.5 SiH4 = 2 0 0 Layer 1.5 15 0.18 TABLE 2A Stratified Layer used flow rate flow rate discharge Layer- manure speed power building gases performance ratio thickness dwindling (Standard cm³ / min) (W / cm²) speed (nm / s) (µm) SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 0.1 First 0, 1 8 0, 5 20 layer GeH4 / He = 0.05 Second SiH4 / He = 0.5 SiH4 = 2 0 0 layer 0.18 1.5 5 TABLE 3A Stratified Layer Used Flow Rate Flow Rate Discharge Layer- manure speed power thickness build-up gas ratio dizzy (Standard cm³ / min) (W / cm²) speed (nm / s) (µm) SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 0.4 First 0, 1 8 0, 5 2 Layer GeH4 / He = 0.05 Second SiH4 / He = 0.5 SiH4 = 2 0 0 Shift 0, 1 8 1, 5 20 B2H6 / He = 10-3 B2H6 / SiH4 = 2x10-5 TABLE 4A Sample A401 A402 A403 A404 A405 A406 A407 No. Ge salary (Atcm-%) 1 3 5 10 40 6 0 90 Apply tung # | O 0 excellent for draw good the practical net use TABLE 5A Sample A 501 | A 502 | A 503 | A 504 | A 505 No. A 601 A 502 A 503 A 5O A505 Layer- thickness (µm 0.1 0.5 1 2 5 Apply tion excellent good TABLE 6A Slice image Layer used flow rate flow rate formation layer speed structure gases ratio power thickness (Standard cm³ / min) speed (nm / s) (W / cm²) (µm) SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 1 First 0, 1 8 0, 5 2 layer GeH4 / He = 0.05 SiH4 / He = 0.5 SiH4 = 2 0 0 Second 1, 5 Layer PH3 / SiH4 = 1x10-7 0, 1 8 20 PH3 / He = 10-3 Table 1B Stratified Layer used flow rate flow rate discharge discharge layer speed structure gases ratio power thickness (Standard cm³ / min) speed (nm / s) (W / cm²) (µm) SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 1-0 First 0.18 0.5 10 layer GeH4 / He = 0.05 SiH4 / He = 0.5 SiH4 = 2 0 0 Second 1, 5 Layer 0, 1 8 10 TABLE 2B Slice image Layer used flow rate flow rate formation layer speed aufoau gases ratio power thickness (Standard cm³ / min) speed (nm / s) (W / cm²) (µm) SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 1/0 ~ 0 First 0, 1 8 0, 5 8 layer GeH4 / He = 0.05 SiH4 / He = 0.5 SiH4 = 2 0 0 Second Layer 1, 5 10 0, 1 8 TABLE 3B Slice image Layer- Layer used flow rate flow rate discharge discharge speed structure gases ratio power thickness (Standard cm³ / min) speed (nm / s) (W / cm²) (µm) SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 4/10 ~ 2/1000 First 0.18 0.5 2.0 layer GeH4 / He = 0.05 SiH4 / He = 0.5 SiH4 = 2 0 0 Second 1.5 Layer 0.18 20 TABLE 4B Stratified Layer- Layer used flow rate flow rate discharge discharge speed structure gases ratio power thickness (Standard cm³ / min) speed (nm / s) (W / cm²) (µm) SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 1-0 First 0.18 0.5 2.0 layer GeH4 / He = 0.05 SiH4 / He = 0.5 SiH4 = 2 0 0 Second 1.5 Layer 0.18 15 TABLE 5B Stratified Layer- Layer used flow rate flow rate discharge discharge speed building gases performance ratio thickness (Standard cm³ / min) speed (nm / s) (W / cm²) (µm) SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 8 / 10-0 First 0.18 0.5 0.8 layer GeH4 / He = 0.05 SiH4 / He = 0.5 SiH4 = 2 0 0 Second Layer 1, 5 0, 1 8 20 TABLE 6B Stratified Layer- Layer used flow rate flow rate discharge discharge speed power thickness build up gas ratio (Standard cm³ / min) speed (nm / s) (W / cm²) (µm) GeH4 / SiH4 = 1-0 SiH4 / He = 0.05 SiH4 + GeH4 = 50 First 0, 1 8 0, 5 8 layer GeH4 / He = 0.05 SiH4 / He = 0.5 SiH4 = 2 0 0 Second 1, 5 layer 0, 1 8 15 TABLE 7B Stratified Layer used flow rate flow rate discharge discharge layer speed structure gases ratio power thickness (Standard cm³ / min) speed (nm / s) (W / cm²) (µm) SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 1/10 ~ 0 0, 1 8 0, 5 8 First layer GeH4 / He = 0.05 SiH4 / He = 0.5 SiH4 = 2 0 0 Second 1, 5 Layer 0, 1 8 10 TABLE 8B Stratified Layer used flow rate flow rate discharge discharge layer speed structure gases ratio power thickness (Standard cm³ / min) speed (nm / s) (W / cm²) (µm) Si2H6 / He = 0.05 Si2H6 + GeH4 = 5 0 GeH4 / Si2H6 = 1 ~ 0 0, 1 8 0, 5 10 First layer GeH4 / He = 0.05 SiH4 / He = 0.5 SiH4 = 2 0 0 Second 1.5 Layer 0, 1 8 10 TABLE 9B Stratified Layer- Layer Flow Rate Flow Rate Discharge Used manure speed structure gases ratio power thickness (Standard cm³ / min) speed (nm / s) (W / cm²) (µm) SiF4 / He = 0.05 SiF4 + GeH4 = 5 0 GeH4 / SiF4 = 1 ~ 0 First 0, 1 8 0, 5 10 layer GeH4 / He = 0.05 SiH4 / He = 0.5 SiH4 = 2 0 0 Second 1, 5 Layer 0, 1 8 10 TABLE 10B Slice image Layer used flow rate flow rate discharge discharge layer speed power thickness build up gas ratio (Standard cm³ / min) speed (nm / s) (W / cm²) (µm) SiH4 / He = 0.05 First SiH4 + SiF4 + GeH4 0.1 8 0.5 10 layer SiF4 / He = 0.05 = 50 GeH4 / (SiH4 + SiF4) = 1-0 GeH4 / He = 0.05 SiH4 / He = 0.5 SiH4 = 2 0 0 Second 1, 5 Layer 0, 1 8 10 TABLE 11B Flow discharge layer Layer- used flow rate- speed educational build-up of gas ratio performance speed (Standard cm³ / min) age (W / cm²) (nm / s) SiH4 / He = 0.05 SiH4 = 200 Be2H6 / SiH4 = 2x10-5 Second layer B2H6 / He = 10-3 0.18 1.5 TABLE 12B Sample No. B1101 B1102 B1103 B1104 B1105 B1106 B1107 B1108 B1109 B1110 First Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Layer 8 9 10 11 12 13 14 15 16 17 Layer- thickness of the second 10 10 20 15 20 15 10 10 10 10 layer (µm) valuation excellent good TABLE 13B Flow discharge layer Layer- used flow rate- speed educational build-up of gas ratio power speed (Standard cm³ / min) age (W / cm²) (nm / s) SiH4 / He = 0.5 SiH4 = 200 PH2 / SiH4 = 1x10-7 Second layer PH3 / He = 10-3 0.18 1.5 TABLE 14B Sample No. B1201 B1202 B1203 B1204 B1205 B1206 B1207 B1208 B1209 B1210 First Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Layer 8 9 10 11 12 13 14 15 16 17 Layer- thickness of the second 10 10 20 15 20 15 10 10 10 10 layer (µm) valuation excellent good TABLE 1C Stratified Layer used flow rate flow rate discharge discharge layer speed power thickness build up gas ratio (Standard cm³ / min) (W / cm²) speed (nm / s) (µm) SiH4 / He = 0.05 SiH4 + GeH4 = 50 GeH4 / SiH4 = 3/10 First 0, 1 8 0, 5 1 Layer GeH4 / He = 0.05 B2H6 / (GeH4 + SiH4) = 3x10-3 B2H6 / He = 10-3 SiH4 / He = 0.5 SiH4 = 2 0 0 Second Shift 0, 1 8 1, 5 2 0 TABLE 2C Flow discharge layer Layer- used speed formation-formation-layer- Flow rate structure gases output speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 1/10 First Layer GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 1 B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 3x10-3 SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 1/10 0.1 8 0.5 19 Second Layer GeH4 / He = 0.05 Third SiH4 / He = 0.5 SiH4 = 2 0 0 0, 1 8 1.5 5 layer TABLE 3C Flow discharge layer Layer- used speed formation- layer- Flow rate build-up gases power speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / He = 3/10 First GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 2 layer B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 5x10-3 SiH4 / He = 0.5 SiH4 = 2 0 0 Second Layer 0, 1 8 1.5 2 0 B2H6 / He = 10-3 B2H6 / SiH4 = 2 x 10-4 0, 1 8 1.5 2 0 TABLE 4C Sample No. C401 C402 C403 C404 C405 C406 C407 C408 GeH4 / SiH4 Flow rate 5/100 1/10 2/10 4/10 5/10 7/10 8/10 1/1 speedy relationship Ge content 4.3 8.4 15.4 26.7 32.3 38.9 42 47.6 (Atom-%) valuation excellent good TABLE 5C sample C501 C502 C503 C504 C505 C506 C507 C508 No. layer thickness 3.0 nm 50.0 nm 0.1 µm 0.3 µm 0.8 µm 3 µm 4 µm 5 µm Apply tung # # excellent good # sufficient for practical use TABLE 6C Flow discharge layer Layer- used speed formation-formation-layer- Flow rate structure gases output speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 5/10 First GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 2 layer B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 5x10-3 SiH4 / He = 0.5 SiH4 = 2 0 0 Second layer PH3 / He = 10-3 PH3 / SiH4 = 9 x 10-5 0.1 8 1.5 2 0 TABLE 7C Flow discharge layer Layer- used speed formation- layer- Flow rate structure gases output speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / He = 5/10 First GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 1 5 layer B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 8x10-4 Second SiH4 / He = 0.5 SiH4 = 2 0 0 Layer 0, 1 8 1.5 5 PH3 / He = 10-3 PH3 / SiH4 = 1 x 10-5 TABLE 8C Flow discharge layer Layer- used speed formation- layer- Flow rate structure gases output speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 3/10 First GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 1 layer B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 9 x 10-4 SiH4 / He = 0.5 SiH4 = 2 0 0 Second layer B2H6 / He = 10-3 B2H6 / SiH4 = 9 x 10-4 0.1 8 1.5 1 5 TABLE 9C Flow discharge layer Layer- used speed formation- layer- Flow rate structure gases output speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 1/10 First GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 1 5 layer B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 9 x 10-4 Second SiH4 / He = 0.5 SiH4 = 2 0 0 Layer 0, 1 8 1.5 5 B2H6 / He = 10-3 B2H6 / SiH4 = 9 x 10-4 TABLE 10C Flow discharge layer Layer- used speed formation- layer- Flow rate structure gases output speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 3/10 First GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 2 layer B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 2 x 10-4 SiH4 / He = 0.5 SiH4 = 2 0 0 Second Layer 0, 1 8 1.5 2 0 B2H6 / He = 10-3 B2H6 / SiH4 = 2 x 10-4 TABLE 1D Layer flow Flow rate- discharge- layer- layer- on-speed used formation thickness paralysis construction gas output speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 SiH4 + GeH4 = 50 GeH4 / SiH4 = 4 / 10-0 layer GeH4 / He = 0.05 0.18 0.5 1 B2H6 / (GeH4 + SiH4) = 3x10-3 B2H6 / He = 10-3 Second SiH4 / He = 0.5 SiH4 = 2 0 0 Layer 0.18 1.5 19 TABLE 2D Stratified flow Flow rate- discharge- layer- layer- on-speed used ratio of education thickness build gases speed (µm) (Standard cm³ / min) output age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 1 / 10-0 Layer 0.18 0.5 2 GeH4 / He = 0.05 SiH4 + GeH4 = 50 B2H6 / (GeH4 + SiH4) = 1x10-3 B2H6 / He = 10-3 Second 0.18 1.5 15 SiH4 / He = 0.5 SiH4 = 200 layer TABLE 3D Layer flow discharge layer layer Flow rate on- used speed formation formation thickness relationship construction gas output speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 SiH4 + GeH4 = 50 GeH4 / SiH4 = 4 / 10-2 / 1000 Layer 0.18 0.5 2 GeH4 / He = 0.05 B2H6 / (GeH4 + SiH4) = 1x10-3 B2H6 / He = 10-3 Second SiH4 / He = 0.5 SiH4 = 200 Layer 0.18 1.5 15 TABLE 4D Layer flow Flow rate- discharge- layer- layer- on-speed used ratio of formation to formation thickness construction gas output speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 15 / 100-0 layer GeH4 / He = 0.05 SiH4 + GeH4 = 50 0.18 0.5 1 B2H6 / (GeH4 + SiH4) = 3x10-3 B2H6 / He = 10-3 Second SiH4 / He = 0.5 Layer SiH4 = 200 0.18 1.5 15 TABLE 5D Layer flow Flow rate- discharge- layer- layer- on- used speed formation formation thickness relationship construction gas output speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 SiH4 + GeH4 = 50 GeH4 / SiH4 = 1 ~ 5/100 Layer 0.18 0.5 1 GeH4 / He = 0.05 B2H6 / (GeH4 + SiH4) = 3x10-4 B2H6 / He = 10-3 Second SiH4 / He = 0.5 SiH4 = 200 15 Layer 0.18 1.5 TABLE 6D Stratified flow Flow rate discharge layer layer on- used speed formation formation thickness relationship construction gas output speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 2 / 10-0 layer GeH4 / He = 0.05 SiH4 + GeH4 = 50 0.18 0.5 1 B2H6 / (GeH4 + SiH4) = 3x10-3 B2H6 / He = 10-3 Second SiH4 / He = 0.5 Layer SiH4 = 200 0.18 1.5 15 TABLE 7D Layer flow Flow rate discharge layer layer on- used speed formation formation thickness relationship construction gas output speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 SiH4 + GeH4 = 50 GeH4 / SiH4 = 1 / 10-0 Layer 0.18 0.5 1 GeH4 / He = 0.05 B2H6 / (GeH4 + SiH4) = 1x10-3 B2H6 / He = 10-3 Second SiH4 / He = 0.5 SiH4 = 200 15 Layer 0.18 1.5 TABLE 8D Layer flow Flow rate discharge layer layer on- used speed- ratio of educational attainment construction gases performance speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First Si2H6 / He = 0.05 GeH4 / Si2H6 = 4 / 10-0 Layer 1 GeH4 / He = 0.05 Si2H6 + GeH4 = 50 0.18 0.5 B2H6 / (GeH4 + Si2H6) = 3x10-3 B2H6 / He = 10-3 Second Si2H6 / He = 0.5 19 Si2H6 = 200 0.18 1.5 layer TABLE 9D Layer flow Flow rate discharge layer layer on- used speed formation formation thickness relationship construction gas output speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiF4 / He = 0.05 SiF4 + GeH4 = 50 GeH4 / SiF4 = 4 / 10-0 layer GeH4 / He = 0.05 0.18 0.5 1 B2H6 / (GeH4 + SiF4) = 1x10-3 B2H6 / He = 10-3 Second SiF4 / He = 0.5 SiF4 = 200 Layer 0.18 1.5 19 TABLE 10D Layer flow Flow rate discharge layer layer on- used speed formation formation thickness relationship construction gas output speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / (SiH4 + SiF4) = 4 / 10-0 SiH4 / He layer = 0.05 SiH4 + SiF4 + GeH4 0.18 0.5 1 GeH4 / He = 0.05 B2H6 / (GeH4 + SiH4 + SiF4) = 50 B2H6 / He = 10-3 = 3x10-3 Second SiH4 / He = 0.5 SiH4 + SiF4 0.18 1.5 19 layer SiF4 / He = 0.5 = 200 TABLE 11D Layer flow Flow rate discharge layer layer on-speed used ratio of formation to formation thickness construction gas output speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 SiH4 + GeH4 = 50 GeH4 / SiH4 = 4 / 10-0 layer GeH4 / He = 0.05 0.18 0.5 1 B2H6 / (GeH4 + SiH4) = 5x10-4 B2H6 / He = 10-3 Second SiH4 / He = 0.5 B2H6 / SiH4 = 5x10-4 SiH4 = 200 15 Layer B2H6 / He = 10-3 0.18 1.5 TABLE 12D Layer flow Flow rate discharge layer layer on-speed used ratio of bidding thickness build gases (Standard cm³ / min) output speed (µm) age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 4 / 10-0 layer 0.18 0.5 1 GeH4 / He = 0.05 SiH4 + GeH4 = 50 B2H6 / (GeH4 + SiH4) = 3x10-3 B2H6 / He = 10-3 Second SiH4 / He = 0.5 Layer SiH4 = 200 B2H6 / SiH4 = 2x10-4 0.18 1.5 15 B2H6 / He = 10-3 TABLE 13D Layer flow rate flow rate discharge layer up- used speed ratio d- bid- construction gases output speed (Standard cm³ / min) age (W / cm²) (nm / s) Second SiH4 / He = 0.5 Layer SiH4 = 200 B2H6 / SiH4 = 1x10-4 0.18 1.5 B2H6 / He = 10-3 TABLE 14D Sample No. D1301 D1302 D1303 D1304 D1305 D1306 D1307 D1308 D1309 D1310 First Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Layer 32 33 34 35 36 37 38 39 40 41 Layer- thickness of the 19 15 15 15 15 15 15 19 19 19 second Layer (µm) valuation excellent good TABLE 15D Stratified Flow Flow Velocity Discharge Stratified up- used speed ratio education and training construction gases output speed (Standard cm³ / min) age (W / cm²) (nm / s) Second SiH4 / He = 0.5 Layer SiH4 = 200 0.18 1.5 PH3 / He = 10-3 PH3 / SiH4 = 9 x 10-5 TABLE 16D Sample No. D1401 D1402 D1403 D1404 D1405 D1406 D1407 D1408 D1409 D1410 First Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Layer 32 33 34 35 36 37 38 39 40 41 Layer- thickness of the 19 15 15 15 15 15 15 19 19 19 Second Layer (µm) valuation excellent good TABLE 1E Layer flow discharge layer layer structure gases used velocity flow velocity formation thickness ratio power to speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 1/1 Layer GeH4 / He = 0.05 SiH4 + GeH4 = 50 NO / (GeH4 + SiH4) = 2/100 0.18 0.5 3 NO Second SiH4 / He = 0.5 SiH4 = 200 Layer 0.18 1.5 15 TABLE 2E Layer flow discharge layer layer Gases used velocity flow velocity formation thickness ratio power to speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 1/10 Layer GeH4 / He = 0.05 SiH4 + GeH4 = 50 NO / (GeH4 + SiH4) = 3/100 ~ 0 0.18 0.5 5 NO (linear decrease) Second SiH4 / He = 0.05 GeH4 / SiH4 = 1/10 Layer GeH4 / He = 0.05 SiH4 + GeH4 = 50 0.18 0.5 1 third SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 15 layer TAB Layer- flow- flow rate- discharge- layer- layer- structure gases used velocity ratio formation thickness power speed (µm) (Standard cm³ / min) (W / cm²) speed (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 4/10 layer GeH4 / He = 0.05 SiH4 + GeH4 = 50 NO / (GeH4 + SiH4) = 2/100 0.18 0.5 2 NO Second SiH4 / He = 0.5 NO / SiH = 2/100 layer NO SiH4 = 200 B2H6 / SiH4 = 1x10-5 0.18 1.5 2 B2H6 / He = 10-3 Third SiH4 / He = 0.5 Layer SiH4 = 200 B2H6 / SiH4 = 1x10-5 B2H6 / He = 10-3 0.18 1.5 15 TABLE 4E Sample No. | .D401 D402 D403 D404 D405 D406 D407 Ge content Atcm-%) 1 3 5 10 40 60 90 Valuation # # # # # # # # excellent # good #: sufficient for practical use TABLE SE Sample No. D501 D502 D503 D504 D505 Shift 0 1 0 5 1 2 5 thickness (µm) 0.1 0.5 1 2 5 | Rating | | | | | excellent good Table 6E Stratified flow Flow rate- discharge- layer- layer- on gases used speed ratio of formation thickness building power speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 4/10 layer GeH4 / He = 0.05 SiH4 + GeH4 = 50 NO / (GeH4 + SiH4) = 2/100 0.18 0.5 2 NO Second SiH4 / He = 0.5 layer SiH4 = 200 PH3 / He = 10-3 PH3 / SiH4 = 1x10-7 0.18 1.5 20 TABLE 1F Layer flow rate discharge layer layer structure Gases used speed ratio formation thickness power speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4SiH4 = 4/10 ~ 3/100 Layer SiH4 + GeH4 = 50 0.18 0.5 2 GeH4 / He = 0.05 NO / (GeH4 + SiH4) = 3/100 NO Second SiH4 / He = 0.05 SiH4 + GeH4 = 50 GeH4 / SiH4 = 3/100 ~ 0 0.18 0.5 8 layer GeH4 / He = 0.05 third SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 10 layer TABLE 2F Layer flow layer Flow rate discharge stratified - Gases used speed thickness relationship educational construction (µm) (Standard cm³ / min) output speed age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 1/10 ~ 4/100 Layer 0.18 0.5 5 GeH4 / He = 0.05 SiH4 + GeH4 = 50 NO / (GeH4 + SiH4) = 3/100 NO Second SiH4 / He = 0.05 Layer SiH4 + GeH4 = 50 GeH4 / SiH4 = 4/100 0 0.18 0.5 3 GeH4 / He = 0.05 Third 0.18 1.5 10 SiH4 / He = 0.5 SiH4 = 200 layer TABLE 3F Layer- flow- flow rate- discharge- layer- layer- structure Gases used speed ratio formation thickness power speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 4/10 ~ 4/100 Layer SiH4 + GeH4 = 50 0.18 0.5 1 GeH4 / He = 0.05 NO / (GeH4 + SiH4) = 3/100 NO Second SiH4 / He = 0.05 SiH4 + GeH4 = 50 GeH4 / SiH4 = 4/100 0.18 0.5 1 layer GeH4 / He = 0.05 third SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 15 layer TABLE 4F Layer flow layer Flow rate discharge layer - Gases used speed thickness relationship educational construction (µm) (Standard cm³ / min) output speed age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 15/100 ~ 1/100 Layer 0.18 0.5 0.4 GeH4 / He = 0.05 SiH4 + GeH4 = 50 NO / (GeH4 + SiH4) = 3/100 NO Second SiH4 / He = 0.05 Layer SiH4 + GeH4 = 50 GeH4 / SiH4 = 1/100 ~ 0 0.18 0.5 0.6 Third 0.18 1.5 20 SiH4 / He = 0.5 SiH4 = 200 layer TABLE 5F Layer- flow- flow rate- discharge- layer- layer- structure Gases used speed ratio formation thickness line speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 1/1 ~ 14/100 Layer SiH4 + GeH4 = 50 0.18 0.5 0.2 GeH4 / He = 0.05 NO / (GeH4 + SiH4) = 3/100 NO Second SiH4 / He = 0.05 SiH4 + GeH4 = 50 GeH4 / SiH4 = 14/100 ~ 0 0.18 0.5 0.8 layer GeH4 / He = 0.05 third SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 20 layer TABLE 6F Layer flow layer Flow rate discharge layer - Gases used speed thickness relationship educational construction (µm) (Standard cm³ / min) output speed age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 2/10 ~ 45/1000 Layer 0.18 0.5 2 GeH4 / He = 0.05 SiH4 + GeH4 = 50 NO / (GeH4 + SiH4) = 1/100 NO Second SiH4 / He = 0.05 Layer SiH4 + GeH4 = 50 GeH4 / SiH4 = 45/1000 ~ 0 0.18 0.5 6 GeH4 / He = 0.05 Third 0.18 1.5 10 SiH4 / He = 0.5 SiH4 = 200 layer TABLE 7F Layer- flow- flow rate- discharge- layer- layer- structure Gases used speed ratio formation thickness power speed (µm) (Standard cm³ / min) age (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 1/10 ~ 45/1000 Layer SiH4 + GeH4 = 50 0.18 0.5 4 GeH4 / He = 0.05 NO / (GeH4 + SiH4) = 1/100 NO Second SiH4 / He = 0.05 SiH4 + GeH4 = 50 GeH4 / SiH4 = 45/1000 ~ 0 0.18 0.5 4 layer GeH4 / He = 0.05 third SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 10 layer TABLE 8F Layer flow layer Flow rate discharge layer - Gases used speed thickness relationship educational construction (µm) (Standard cm³ / min) output speed age (W / cm²) (nm / s) First Si2H6 / He = 0.05 GeH4 / Si2H6 = 4/10 ~ 3/100 Layer 0.18 0.5 2 GeH4 / He = 0.05 Si2H6 + GeH4 = 50 NO / (GeH4 + Si2H6) = 3/100 NO Second Si2H6 / He = 0.05 Layer Si2H6 + GeH4 = 50 GeH4 / Si2H6 = 3/100 ~ 0 0.18 0.5 8 GeH4 / He = 0.05 third Si2H6 / He = 0.5 Si2H6 = 200 0.18 1.5 10 layer TABLE 9F Flow discharge layer Layer- used speed formation- layer- Flow rate build-up gases power speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiF4 / He = 0.05 GeH4 / SiF4 = 4/10 ~ 3/100 First Layer GeH4 / He = 0.05 SiF4 + GeH4 = 5 0 NO / (GeH4 + SiF4) = 3/100 0.1 8 0.5 2 NO Second SiF4 / He = 0.05 SiF4 + GeH4 = 5 0 GeH4 / SiF4 = 3/100 ~ 0 0, 1 8 0.5 8 layer GeH4 / He = 0.05 third SiF4 / He = 0.5 SiF4 = 2 0 0 0, 1 8 1.5 1 0 layer TABLE 10F Flow discharge layer Layer- used speed formation- layer- Flow rate build-up gases power speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / (SiH4 + SiF4) First SiF4 / He = 0.05 SiH4 + SiF4 + GeH4 = 4/10 ~ 3/100 0.1 8 0.5 2 layer GeH4 / He = 0.05 = 5 0 NO / (GeH4 + SiH4 + SiF4) NO = 3/100 SiH4 / He = 0.05 SiH4 + SiF4 + GeH4 GeH4 / (SiH4 + SiF4) Second SiF4 / He = 0.05 = 5 0 = 3/100 ~ 0 0, 1 8 0.5 8 layer GeH4 / He = 0.05 Third SiH4 / He = 0.5 SiH4 + SiF4 0.1 8 1.5 1 0 Layer SiF4 / He = 0.5 = 2 0 0 11th Flow discharge layer Layer- used speed- flow speed- formation- build-up gases speed ratio line speed (Norm-cm³ / stung min) (W / cm²) (nm / s) Third SiH4 / He = 0.5 SiH4 = 200 B2H6 / SiH4 = 4x10-4 layer B2H6 / He = 10-3 0.18 1.5 TABLE 12F Sample No. F1101 F1102 F1103 F1104 F1105 F1106 F1107 F1108 F1109 F1110 First Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Shift 54 55 56 57 58 59 60 61 62 63 Layer thickness the third 10 10 15 20 20 10 10 10 10 10 Layer (µm) valuation excellent good TABLE 13F Flow discharge layer Layer- used speed- flow speed- formation- build-up gases speed ratio line speed (Norm-cm3 / power min) (W / cm²) (nm / s) Third SiH4 / He = 0.5 SiH4 = 200 PH3 / SiH4 = 2x10-5 layer PH3 / He = 10-3 0.18 1.5 TABLE 14F Sample No. F1201 F1202 F1203 F1204 F1205 F1026 F1207 F1208 F1209 F1210 First Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Shift 54 55 56 57 58 59 60 61 62 63 Layer thickness the third 10 10 15 20 20 10 10 10 10 10 Layer (µm) valuation excellent @ chnet good TABLE 15F Discharge layer Flow rate educational Shift Speed used Flow speed Shift structure leaning speed Gas ratio thickness (Norm-cm³ / min) performance (µm) (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 3 / 10-0 Layer GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 NO / SiH4 = 4/10 ~ 2/100 0.1 8 0.5 2 NO Second SiH4 / He = 0.5 SiH4 = 2 0 0 NO / SiH4 = 2/100 ~ 0 0, 1 8 1.5 2 Layer NO third SiH4 / He = 0.5 SiH4 = 2 0 0 0, 1 8 1.5 1 5 layer TABLE 16F Entla- layer Flow rate educational Shift Speed used Flow speed Shift line speed build-up gas ratio thickness (Norm-cm³ / min) performance (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 3 / 10-0 First GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 NO / SiH4 = 1/10 ~ 5/100 0.1 8 0.5 1 layer NO Second SiH4 / He = 0.5 SiH4 = 2 0 0 No / SiH4 = 5/100 ~ 0 0, 1 8 1.5 1 Layer NO third SiH4 / He = 0.5 SiH4 = 2 0 0 0, 1 8 1.5 1 8 layer TABLE 1G Stratified Layer- Layer used flow rate flow rate discharge discharge speed power dwindling thickness build up gas ratio (Norm-cm³ / min) (W / cm²) speed (nm / s) (µm) SiH4 / He = 0.05 GeH4 / SiH4 = 3/10 First 1 GeH4 / He = 0.05 SiH4 + GeH4 = 50 0.1 8 0.5 Layer B2H6 / (GeH4 + SiH4) = 3x10-3 B2H6 / He = 10-3 NO / (GeH4 + SiH4) = 3/100 NO SiH4 / He = 0.5 SiH4 = 2 0 0 Second Shift 0, 1 8 1, 5 20 TABLE 2G Flow discharge layer Layer- used speed formation- layer- Flow rate build-up gases power speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 1/10 First GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 1 layer B2H6 / H6 = 10-3 B2H6 / (GeH4 + SiH4) = 3 / 10-3 NO NO / (GeH4 + SiH4) = 3/100 SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 1/10 0.1 8 0.5 19 Second Layer GeH4 / He = 0.05 SiH4 / He = 0.5 SiH4 = 2 0 0 0, 1 8 1.5 5 third layer TABLE 3G Flow-through discharge layer Layer- used speed formation- layer- Flow rate build-up gases power speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 3/10 First GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 2 layer B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 5 x 10-3 NO NO / (GeH4 + SiH4) = 1/100 Second SiH4 / He = 0.5 SiH4 = 2 0 0 layer 0.1 8 1.5 2 0 B2H6 / He = 10-3 B2H6 / SiH4 = 2 x 10-4 Table 4G Sample No. G401 G402 G403 G404 G405 G406 G407 G408 GeH4 / SiH4 (through river speed 5/100 1/10 2/10 4/10 5/10 7/10 8/10 1/1 employment relationship) Ge content (Atom-%) 4.3 8.4 15.4 26.7 32.3 38.9 42 47.6 valuation excellent good table 5G sample No. G501 G502 G503 G504 G505 G506 G507 G508 Layer- thickness 3.0 nm 50.0 nm 0.1 µm 0.3 µm 0.8 µm 3 µm 4 µm 5 µm Apply tion sufficient for excellent good practical use TABLE 6G Discharge layer Flow rate education layer speed Layer- used flow rate- line speed build-up of gas ratio (Standard cm³ / min) speed (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 5/10 GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 2 First B2H6 / (GeH4 + SiH4) = 5x10-3 Layer B2H6 / He = 10-3 NO / (GeH4 + SiH4) = 1/100 NO SiH4 / He = 0.5 SiH4 = 2 0 0 Second PH3 / SiH4 = 9x10-5 0.1 8 1.5 20 Layer PH3 / He = 10-3 (Sample No. G601) TABLE 7G Flow discharge layer shrinkage formation layer Layer- used flow rate- line speed build-up of gas ratio (Standard cm³ / min) speed (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 1/10 First GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 1 5 B2H8 / (GeH4 + SiH4) = 8 x 10-4 layer B2H6 / He = 10-3 NO / (GeH4 + SiH4) = 1/100 NO Second SiH4 / He = 0.5 SiH4 = 2 0 0 Layer PH3 / SiH4 = 1x10-5 0.1 8 1.5 5 PH3 / He = 10-3 (Sample No. G602) Table 8G Stratified flow Flow rate discharge layer layer Gases used speed ratio formation formation thickness building (Standard cm³ / min) speed (µm) age (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 3/10 First GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 1 layer B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 3 x 10-3 NO NO / (GeH4 + SiH4) = 3/100 Second SiH4 / He = 0.5 SiH4 = 2 0 0 layer 0.1 8 1.5 2 0 B2H6 / He = 10-3 B2H6 / SiH4 = 3x10-4 (Sample no.G603) Table 9G Stratified flow Flow rate discharge layer layer Gases used speed ratio formation formation thickness building (Standard cm³ / min) output speed (µm) age (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 1/10 First GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 1 layer B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 1 x 10-5 NO NO / (GeH4 + SiH4) = 3/100 SiH4 / He = 0.05 GeH4 / SiH4 = 1/10 Second GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 1 9 layer B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 1 x 10-5 SiH4 / He = 0.5 SiH4 = 2 0 0 third Layer 0, 1 8 1.5 5 B2H6 / He = 10-3 B2H6 / SiH4 = 3 x 10-4 (Sample No. G701) Table 10G Flow rate Flow rate discharge layer layer Shift Gases used speed ratio formation formation thickness build-up speed (µm) (Standard cm3 / min) age (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 3/10 GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 1 First layer B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 1x10-5 NO NO / SiH4 = 3/100 SiH4 / He = 0.05 GeH4 / SiH4 = 3/10 Second Layer GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 NO / SiH4 = 3/100 0.1 8 0.5 1 NO SiH4 / He = 0.5 SiH4 = 2 0 0 NO / SiH4 = 3/100 Third NO 0, 1 8 1.5 1 layer B2H6 / He = 10-3 B2H6 / SiH4 = 1 x 10-4 SiH4 / He = 0.5 SiH4 = 2 0 0 B2H6 / SiH = 1 x 10-4 Fourth Layer 0, 1 8 1.5 1 5 B2H6 / He = 10-3 (Sample No. G702) TABLE 11G Flow discharge layer Layer- used speed formation- layer- Flow rate build-up gases power speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 3/10 First Layer GeH4 / He = 0.05 SiH4 + Ge = 5 0 0, 1 8 0.5 1 B2H6 / He = 10-3 B2H6 / (Ge + SiH4) = 3 x 10-3 NO NO / (GeH4 + SiH4) = 3/100 ~ 2.83 / 100 SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 3/10 0.1 8 0.5 1 Second Layer GeH4 / He = 0.05 NO / (GeH4 + SiH4) = 2.83 / 100 ~ 0 NO Third SiH4 / He = 0.5 SiH4 = 2 0 0 0, 1 8 1.5 19 layer (Sample No. G801) Note: NO / (GeH4 + SiH4) decreased] linearly TABLE 12G Layer- flow- flow rate- discharge- layer- layer- on- Used gases speed ratio formation thickness building line speed (µm) (Standard cm³ / min) (W / cm²) speed (nm / s) First SiH4 / H4 = 0.05 GeH4 / SiH4 = 1/10 layer GeH4 / He = 0.05 SiH4 + GeH4 = 50 0.18 0.5 0.5 B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 3 x 10-3 NO NO / (GeH4 + SiH4) = 3 / 100-0 Second SiH4 / He = 0.05 GeH4 / SiH4 = 1/10 layer GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0.18 0.5 0.5 B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 3 x 10-3 third SiH4 / He = 0.05 SiH4 + GeH4 = 50 Layer GeH4 / SiH4 = 1/10 GeH4 / He = 0.05 0.18 0.5 19 Fourth SiH4 = 2 0 0 0.18 1.5 5 SiH4 / He = 0.5 layer (Sample No. G802) TABLE 13G Flow discharge layer Layer- used speed formation- layer- Flow rate build-up gases power speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 3/10 First Layer GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 1 B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 5 x 10-3 NO NO / (GeH4 + SiH4) = 1 / 100-0 SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 3/10 0, 1 8 0.5 1 Second GeH4 / He = 0.05 layer B2H6 / (GeH4 + SiH4) = 5 x 10-3 B2H6 / He = 10-3 SiH4 / He = 0.05 SiH4 = 2 0 0 Third 0, 1 8 1.5 20 layer B2H6 / He = 10-3 B2H8 / SiH4 = 2 x 10-4 (Sample No. G803) TABLE 14G Flow discharge layer Layer- used speed formation- layer- Flow rate build-up gases power speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 3/10 First GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0, 1 8 0.5 1 layer B2H6 / SiH4 = 3 x 10-3 B2H6 / He = 10-3 NO NO / SiH4 = 3/100 ~ 2.83 / 100 SiH4 / He = 0.05 SiH4 = 2 0 0 NO / SiH4 = 2.83 / 100 ~ 0 Second NO Layer 0, 1 8 1.5 20 B2H6 / He = 10-3 B2H6 / SiH4 = 3 x 10-4 (Sample No. G804) Note: NO / SiH4 decreased linearly in TABLE 15G Flow discharge layer Layer- used speed formation- layer- Flow rate build-up gases power speed (Standard cm³ / min) ratio density (µm) (W / cm²) (nm / s) SiH4 / He = 0.05 GeH4 / SiH4 = 1/10 First Layer GeH4 / He = 0.05 SiH4 + GeH4 = 5 0 0.18 0.5 1 B2H6 / He = 10-3 B2H6 / (GeH4 + SiH4) = 1x10 -5 NO NO / (GeH4 + SiH4) = 3 / 100-0 SiH4 / He = 0.05 SiH4 + GeH4 = 5 0 GeH4 / SiH4 = 1/10 0, 18 0.5 19 Second GeH4 / He = 0.05 layer B2H6 / (GeH4 + SiH4) = 1x10-5 B2H6 / He = 10-3 SiH4 / He = 0.5 SiH4 = 2 0 0 Third 0, 18 1.5 5 layer B2H6 / He = 10-3 B2H6 / SiH4 = 3x10-4 (Sample No. G805) Note: NO / (GeH4 + SiH4) decreased linearly in TABLE 1H Layer flow flow rate discharge layer layer structure Gases used speed ratio formation thickness line speed (µm) (Standard cm3 / min) performance (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 4 / 10-0 layer GeH4 / He = 0.05 B2H6 / (GeH4 + SiH4) = 3x10-3 SiH4 + GeH4 = 50 0.18 0.5 1 B2H6 / He = 10-3 NO / (GeH4 + SiH4) = 3/100 NO Second SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 19 layer TABLE 2H Layer flow flow rate discharge layer layer structure Gases used speed ratio formation thickness line speed (µm) (Standard cm³ / min) performance (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 1 / 10-0 layer GeH4 / He = 0.05 B2H6 / (GeH4 + SiH4) = 1x10-3 0.18 0.5 2 SiH4 + GeH4 = 50 B2H6 / He = 10-3 NO / (GeH4 + SiH4) = 1/100 NO Second SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 15 layer TABLE 3H Layer flow flow rate discharge layer layer structure Gases used speed ratio formation thickness line speed (µm) (Standard cm³ / min) performance (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 4/10 ~ 2/1000 layer GeH4 / He = 0.05 B2H6 / (GeH4 + SiH4) = 1x10-3 SiH4 + GeH4 = 50 0.18 0.5 2 B2H6 / He = 10-3 NO / (GeH4 + SiH4) = 1/100 NO Second SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 15 layer 2 wc tl wm E Layer flow flow rate discharge layer layer structure Gases used speed ratio formation thickness line speed (µm) (Standard cm³ / min) performance (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 15/100 ~ 0 layer GeH4 / He = 0.05 B2H6 / (GeH4 + SiH4) = 3x10-3 0.18 0.5 1 SiH4 + GeH4 = 50 B2H6 / He = 10-3 NO / (GeH4 + SiH4) = 2/100 NO Second SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 15 layer TABLE 5H Layer flow flow rate discharge layer layer structure Gases used speed ratio formation thickness line speed (µm) (Standard cm³ / min) performance (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 1/1 ~ 5/100 layer GeH4 / He = 0.05 B2H6 / (GeH4 + SiH4) = 3x10-3 SiH4 + GeH4 = 50 0.18 0.5 1 B2H6 / He = 10-3 NO / (GeH4 + SiH4) = 2/100 NO Second SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 15 layer TABLE 6H Layer flow flow rate discharge layer layer structure Gases used speed ratio formation thickness line speed (µm) (Standard cm³ / min) performance (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 2 / 10-0 layer GeH4 / He = 0.05 B2H6 / (GeH4 + SiH4) = 3x10-3 0.18 0.5 1 SiH4 + GeH4 = 50 B2H6 / He = 10-3 NO / (GeH4 + SiH4) = 2/100 NO Second SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 15 layer TABLE 7H Layer flow flow rate discharge layer layer structure Gases used speed ratio formation thickness line speed (µm) (Standard cm³ / min) performance (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 1 / 10-0 layer GeH4 / He = 0.05 B2H6 / (GeH4 + SiH4) = 3x10-3 SiH4 + GeH4 = 50 0.18 0.5 1 B2H6 / He = 10-3 NO / (GeH4 + SiH4) = 2/100 NO Second SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 15 layer TABLE 8H Layer flow flow rate discharge layer layer structure Gases used speed ratio formation thickness line speed (µm) (Standard cm³ / min) performance (W / cm²) (nm / s) First Si2H6 / He = 0.05 GeH4 / Si2H6 = 4/10 ~ 0 layer GeH4 / He = 0.05 B2H6 / (GeH4 + Si2H6) = 3x10-3 0.18 0.5 1 Si2H6 + GeH4 = 50 B2H6 / He = 10-3 NO / (GeH4 + Si2H6) = 2/100 NO Second Si2H6 / He = 0.5 Si2H6 = 200 0.18 1.5 15 layer TABLE 9H Layer flow flow rate discharge layer layer structure Gases used speed ratio formation thickness line speed (µm) (Standard cm³ / min) performance (W / cm²) (nm / s) First SiF4 / He = 0.05 GeH4 / SiF4 = 4 / 10-0 layer GeH4 / He = 0.05 B2H6 / (GeH4 + SiF4) = 3x10-3 SiF4 + GeH4 = 50 0.18 0.5 1 B2H6 / He = 10-3 NO / (GeH4 + SiF4) = 1/100 NO Second SiF4 / He = 0.5 SiF4 = 200 0.18 1.5 19 layer TABLE 10H Layer flow flow rate discharge layer layer structure Gases used speed ratio formation thickness line speed (µm) (Standard cm³ / min) performance (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / (SiH4 + SiF4) = 4/10 ~ 0 SiF4 / He layer = 0.05 GeH4 / He = 0.05 SiH4 + SiF4 + GeH4 B2H6 / (GeH4 + SiH4 + SiF4) = 3x10-3 0.18 0.5 1 B2H6 / He = 10-3 NO / GeH4 + SiH4 + SiF4) = 1/100 = 50 NO Second SiH4 / He = 0.5 SiH4 + SiF4 = 200 Layer SiF4 / He = 0.5 0.18 0.5 19 TABLE 11H Layer flow flow rate discharge layer layer structure Gases used speed ratio formation thickness line speed (µm) (Standard cm³ / min) performance (W / cm²) (nm / s) First SiH4 / He = 0.05 GeH4 / SiH4 = 4 / 10-0 layer GeH4 / He = 0.05 B2H6 / (GeH4 + SiH4) = 3x10-3 SiH4 + GeH4 = 50 0.18 0.5 1 B2H6 / He = 10-3 NO / (GeH4 + SiH4) = 3/100 NO Second SiH4 / He = 0.5 SiH4 = 200 B2H6 / SiH4 = 3 x 10-3 0.18 1.5 19 Layer B2H6 / He = 10-3 TABLE 12H Sample No. H1201 H1202 H1203 H1204 H1205 H1206 H1207 H1208 B2H6 / SiH4 (flow 1x10-2 5x10-3 2x10-3 1x10-3 8x10-4 5x10-4 3x10-4 1x104 speed relationship) B content (Atomic ppm) 1x104 6x103 25x103 1x103 800 500 300 100 valuation especially good TABLE 13H Layer flow discharge layer structure structure Gases used velocity flow velocity formation ratio lei- dizzy- (Standard cm³ / min) performance (W / cm²) (nm / s) Second SiH4 / He = 0.5 Layer SiH4 = 200 B2H6 / SiH4 = 8x10-5 0.18 1.5 B2H6 / He = 10-3 TABLE 14H Sample No. H1301 H1302 H1303 H1304 H1305 H1306 H1307 H1308 H1309 H1310 Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. First layer 78 79 80 81 82 83 84 85 86 87 Layer thickness the second 10 10 20 15 20 15 10 10 10 10 Layer (µm) valuation excellent good TABLE 15H Layer flow discharge layer bil structure Gases used velocity flow velocity formation ratio lei- dizzy- (Standard cm³ / min) performance (W / cm²) (nm / s) Second SiH4 / He = 0.5 Layer SiH4 = 200 PH3 / SiH4 = 1x10-5 0.18 1.5 PH3 / He = 10-3 TABLE 16H Sample No. H1401 H1402 H1403 H1404 H1405 H1406 H1407 H1408 H1409 H1410 Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. First layer 78 79 80 81 82 83 84 85 86 87 Layer thickness the second 10 10 20 15 20 15 10 10 10 10 Layer (µm) valuation excellent good Table A1 ccr E flow rate o SU e gas velocity flow velocity | r S õ I cza performancefn X, (W / cm) eit (m) (nm / s) S first vo SiH4 / He = 0.05 SiH4 + GeH4 GeH4 / SiH4 = l 0.18 0.5 rn O Second Cnr f SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 15 (do U rc rc H rn \ v C. <11) SiH4 / He = 0.55i144 = 100 SiH4 / C2H4 = 3/7 0.18 3,000 c ¢ rn s, i u C> tn v \ o ~ H n r: ra ll ll esvv H o ool tN W> Xn u S rX \ s O v tr v DX o @ ax, rn U zt ~ n ~ ¢ v B u R en 11 en tn C: tn OO rn rn osv vooc: o O 11 11 11 11 tooo tv C: n: c 3: 3 0 v xr vvv o fa ev -ld tN :> z fn O rCn rn U s SOSH O lv H @ 4 rX SOS 0 4 s 2 to 3 us @ < ua X en ts nzu qQ z H Su D (I) lQDT4DS Q Su tn rt aqdloultd tn U Table A2 I. 4th = OcE r (SC rn 0 cu rn II C1 n u 0 53 a (uc (~ aa I. cn c 3Cru E m oo mcr u ci clcn UC Flow rates used: H Q) rc O o H o since 3 II C sv D z = <o ti min) (nm / s) Uc, 9 Z H first Q) zo av c) x f>) l a, 0 I. ctmo = 1 SiH4 / He = 0.5 SiH4 = 20O H ga, o Ht uo fs W f- I ~ + 11 s ^ E vv u 3 v sW - o l- z SFOFF rn -4 D uoz E en 11 Xn n rn X ~ rn n oo tn ovv vooo O 11 11 11 roso 3 0 before z tn 3: 2:: x: oao F > rs n tO n s os ou 4Y u lv H @ v ens os ynh U 3 U u fa X tn s tn el n Su DI); DT0DS rn ffJ ax {dlourV 2 Table A3 UQ) E cu O L: U 'cJ U cl rnrl II ". Egg J rn v V in Shift Used Dc 2 o æ 0 n structure of gases M flow rate formation SO r at 3 speed ratio (W / cm2) en c cr a 3 E aJ cdcr U rc c (cn 4 u ri 3 oo 3 oo tr r c -ri In 3 B2H6 / SiH 4 = 2xl05 0.18 20 s H o UC sr ~ rn v KX X ~ o fN r: a ll ll asvv D v ~ H o oPx -1 W> n an S tn XX OV v xD z qol 2 = 3 oo fs axam l r I s sr ca m fo: r: o ; RH, 1 0 - /, 1 tn, 4 :: uo ZE fn 11 (n 2 Wy ur ur fn oo ur l ov - K o vooo H C 11 11 ìì 11 r O o tS o 3, :: X tn m z os S 3 sg u 3 I) aqDIqDS ~ uz ra aq ourv ' Table A4 Sample No. | 401A | 402A | 403A | 404A | 405A | 406A | 407A Ge content (Atom%) 1 3 5 10 40 60 90 valuation : excellent: good: sufficient for practical use Table A5 Sample No. 501A 502A 503A 504A 505A Layer thickness (µm) 0.1 0.5 1 2 5 valuation #: excellent #: good Table A6 Layer used Flow Discharge Layer Layer build-up gases speed flow rate formation thickness speed ratio (µm) (W / cm²) age (Standard cm³ / (nm / s) min) First Layer SiH4 / He = 0.05 SiH4 + GeH4 GeH4 / SiH4 = 1 0.18 2 0.5 GeH4 / He = 0.05 Second Layer SiH4 / He = 0.5 SiH4 = 200 = 50 1.5 PH3 / He = 10-3 PH3 / SiH4 = 1x10-7 0.18 20 Table A7 Flow rate Loading used discharge layer speed flow rate condition gases power thickness ratio or area ratio (Standard cm³ / min) (W / cm²) (µm) 12-1 Ar 200 Si disk: graphite = 1.5: 8.5 0.3 0.5 12-2 Ar 200 Si disk: graphite = 0.5: 9.5 0.3 0.3 12-3 Ar 200 Si disk: graphite = 6: 4 0.3 1.0 12-4 SiH4 / He = 1 SiH4 = 15 SiH4: C2H4 = 0.4: 9.6 0.18 0.3 C2H4 12-5 SiH4 / He = 0.5 SiH4 = 100 SiH4: C2H4 = 5: 5 0.18 1.5 C2H4 12-6 SiH4 / He = 0.5 SIH4 + SiF4 SiH4: SiF4: C2H4 = 1.5: 1.5: 7 0.18 0.5 SiF4 / He = 0.5 = 150 C2H4 12-7 SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 0.3: 0.1: 9.6 0.18 0.3 SiF4 / He = 0.5 = 15 C2H4 12-8 SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 3: 3: 4 0.18 1.5 SiF4 / He = 0.5 = 150 C2H4 Table A8 Manufacturing conditions of the amorphous layer (II) Sample No. / Evaluation 8-201A 8-301A 8-601A 8-1A 8-202A 8-302A 8-602A 8-2A 8-203A 8-303A 8-603A 8-3A 8-204A 8-304A 8-604A 8-4A 8-205A 8-305A 8-605A 8-5A 8-206A 8-306A 8-606A 8-6A 8-207A 8-307A 8-607A 8-7A 8-208A 8-308A 8-608A 8-8A Sample no. Overall rating rating the image quality- the durability- activity Evaluation standard: ... excellent ... good Table A9 Sample No. 901A 902A 903A 904A 905A 906A 907A Si: C target 9: 1 6.5: 3.5 4: 6 2: 8 1: 9 0.5: 9.5 0.2: 9.8 (Area ratio) Si: C 9.7: 0.3 8.8: 1.2 7.3: 2.7 4.8: 5.2 3: 7 2: 8 0.8: 9.2 (Salary ratio) Rating the image # X quality : very good: good #: for practical use X: generation of image defects use sufficient table A10 Sample No. 1001A 1002A 1003A 1004A 1005A 1006A 1007A 1008A SiH4: C2H4 9: 1 6: 4 4: 6 2: 8 1: 9 0.5: 9.5 0.35: 9.65 0.2: 9.8 (Flow rate relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Assessment of the image quality # # X : very good: good #: for practical use X: generation of image defects use sufficient Table A11 Sample No. 1101A 1102A 1103A 1104A 1105A 1106A 1107A 1108A SiH4: SiF4: C2H4 5: 4: 1 3: 3.5: 3.5 2: 2: 6 1: 1: 8 0.6: 0.4: 9 0.2: 0.3: 9.5 0.2: 0, 15: 9.65 0.1: 0.1: 9.8 (Flow rate employment relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 Evaluation of the # # X picture quality : very good: good #: for practical use X: generation of image defects use sufficient Table A12 Thickness of the Amorphous specimen No layer (11) results (m) Propensity to generate 1201A 0.001 of artifacts no artifacts during 1202A 0.02 20,000 repetitions stable during 50,000 or 1203A 0.05 more repetitions stable for 200,000 or 1204A 1 more repetitions Table B1 I. c ~ c I rn oa- ccr E tn o U - (V rc c Used C1rl ntladunqs ci shift build-up gases speed flow rate power formation thickness u Dc tm SS o speed ratio X speed \ vv 3 -1 cn speed u -H (Standard cm / 5) min) nm C: o \ 2 a SiH4 / He = (), 05 SiH4 + GeH4 CeH4 / SiH4 = 1/1 18 3 0.5 H u7 u ~ ~ co NO / (GeH4 + SiH4) = 2/100 approx. 3,000 nl ooo -a = 0.18 1.5 15 -c layer SiH 5i1I4 = 100 SiH4: C2H4 3: 7 -x ll 0.5 (1 r: c (= II V) e: S t + N uvv sr J zo cX I ro D c E, o õ , CC rJ g + 11 11 uu XC tv o = ~ £ r ZE un ur uz rD oooo rJ r wei Cl ° vr I l v W s -c G -cu O u fi U oH v H 6 s mS au cu to 3 uu) Pc 2 X m N m @ H U ra .. C ~ H nm u D (I) 4QDIQDS O uz U aqd sourV Q l Table B2 I. ua- rcx E CU n Ln U 'rc cna vrvu) un un CC 3 ri - 07CQ (nn Ln In c (aor criuioE oo First rd SiH4 / He = 0.05 SiI! 4 + GeH4 GeH4 / SiH4 = 1/10 0.18 5 Rad = 50 NO / (GeH4 +5 iH4) = 0.5 r 11 3 II - - o , UH Second m: T Ta loi lls 0 na) Ge !! 4 / lIe = 0.05 = 50 0.5 c3 C 3: U SiH4 / He = 0.5 SiI! 4 = 200 fi v 115 cr ax O zn ~ O I \ er v z CE: svo W4'3.D IU z ON C = r,) E vvv uu X zcoo ;, mm 0 9 4 tn, 1 U), 1 r ZE tn 11 ul 11 uz nu) un n oooou) v lD ooooo voa) oa) EJ r 3: sr T '= CD er er v sr sr to] eo HQ +9 > U ul O z en O xn C rJ C rD, C rJ U 4 U v U 4 H * v H c D 3 ca (n H 6n c 44 (I)) DIQDS a4dl ° R u: U b Table B3 l - E. Urc Y cJ N n cß rc II Iinc ci 0r (cr CC 3 r (- Ln Y, In U 7 C v, c clr (3UE O - rn 0E U ri a, rc C t) H rJ HC c I. at rd L) E 03 CO rc rn U cc ( H u) u H ~ ~ v H OS = 50 v t C, 3,000 I. 0 0 tq SiH4 / He = 0.5 In ut 3 rß II II s <ooo uc c (9 o - c ( nL, \ I o XX CH v <H 9 H Oc (Cra 11 U) \ 11 lí V) II II H rJ H = v 6 - ~; kr 11 5: S layer Si [14 / iIe = 0.5% oz 1.5 15 Oci V o ro v 3: XX br ~ D B2H6 / SiH aO ONN ax O zzmm 'm X | - tt r = oo :: C EU ON or similar W 3 I ~ + 11 11 JCE :: o: 2 ~ t z W 9 o H wH S oH> H 2 OCZEC 11 mm «N mM S un X rn oou) lu) vv - o - o rJ ooo ~ o H YY t | rj aJ Kr,) aJ sr,) O ro rJ or sr sr Q v O z X, 1 QOHON, 0 N aJ rJ U] OZV] Z mu) m > U ll YY Y 4 ca) s rJ S O u Q uv U WHS v H lr Os ds fi; u 3 uvu s 2 X m cs (na uz u u ú (DI q DS @ qdl ow (n U Table B4 Sample No. | 401B | 402B | 403B | 404B | 405B | 406B | 407B Ge content (Atom%) 1 3 5 10 40 60 90 Rating | # | | | | | | # : excellent: good sufficient Table B5 Sample No. 501B 502B 503B 504B 505B Layer thickness 0.1 0.5 1 2 5 valuation @: excellent 0: good Table B6 v UQI r E ru o I = Ui UY v mH v IcnC L) t U ~ c Flow-through discharge layer layer used OH tD H gases r: Cß ~ a a-- ur cr min U v first 4 4 Layer SiH4 / He = 0.05 X + GeH4 GeH4 / SiII4 = 4/10 0.18 C: (D 3 OO S Pm NO / (GeH4 + Si H4) = 2/100 0.5 2 NO r (SiH4, SiH4 = 200 0.18 0 layer / He = 05 D84 PH3 / Sii! 4 = lxl07 or 20 clM C- -N . eD OC 2 C nÈ rD Õ W 3 + N uo XC - o - (DZE u] 11 ce u) un oou) m ooooo v | ll H t (D tD (D CXXX - 3 (D 8 tD O --4 ~ DU] OZU) o <tD J (YOU fi O v [L1 U) tD C S 2 4 - UQ o D (I) uz ns 40DI0DS aqdJot Table B7 Used flow rate Flow rate discharge layer condition gases ratio or area performance thickness speed ratio (µm) (W / cm²) (Standard cm³ / min) 12-1B Ar 200 Si disk: graphite = 1.5: 8.5 0.3 0.5 12-2B Ar 200 Si disk: graphite = 0.5: 9.5 0.3 0.3 12-3B Ar 200 Si disk: graphite = 6: 4 0.3 1.0 12-4B SiH4 / He = 1 SiH4 = 15 SiH4: C2H4 = 0.4: 9.6 0.18 0.3 C2H4 12-5B SiH4 / He = 0.5 SiH4 = 100 SiH4: C2H4 = 5: 5 0.18 1.5 C2H4 12-6B SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 1.5: 1.5: 7 0.18 0.5 SiF4 / He = 0.5 = 150 C2H4 12-7B SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 0.3: 0.1: 9.6 0.18 0.3 SiF4 / He = 0.5 = 15 C2H4 12-8B SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 3: 3: 4 0.18 1.5 SiF4 / He = 0.5 = 150 C2H4 Table Be Manufacturing conditions of the amorphous layer (II) Sample No. / Evaluation 12-201B 12-301B 12-601B 12-1B 12-202B 12-302B 12-602B 12-2B 12-203B 12-303B 12-603B 12-3B 12-204B 12-304B 12-604B 12-4B 12-205B 12-305B 12-605B 12-5B 12-2-6B 12-306B 12-606B 12-6B 12-207B 12-307B 12-607B 12-7B 12-208B 12-308B 12-608B 12-8B Sample no. Overall rating rating the image quality- the durability- activity Evaluation measure tab ... excellent ... good Table B9 Sample No. 901B 902B 903B 904B 905B 906B 907B Si: C target 9: 1 6.5: 3.5 4: 6 2: 8 1: 9 0.5: 9.5 0.2: 9.8 (Area ratio) Si: C 9.7: 0.3 8.8: 1.2 7.3: 2.7 4.8: 5.2 3: 7 2: 8 0.8: 9.2 (Salary ratio) Rating the image # # X quality : very good: good #: for practical use X: generation of image defects use sufficient table B10 Sample No. 1001B 1002B 1003B 1004B 1005B 1006B 1007B 1008B SiH4: C2H4 9: 1 6: 4 4: 6 2: 8 1: 9 0.5: 9.5 0.35: 9.65 0.2: 9.8 (Flow rate relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Assessment of the image # # X quality : very good: good #: for practical use X: generation of image defects use sufficient table B11 Sample No. 1101B 1102B 1103B 1104B 1105B 1106B 1107B 1108B SiH4: SiF4: C2H4 5: 4: 1 3: 3.5: 3.5 2: 2: 6 1: 1: 8 0.6: 0.4: 9 0.2: 0.3: 9.5 0.2: 0, 15: 9.65 0.1: 0.1: 9.8 (Flow rate relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Evaluation of the Image quality # # X very good good # sufficient for practical use X generation of image defects Table B12 Amorphous layer thickness Sample No. (II) (µm) Results 1201B 0.001 Tendency to generate image defects 1202B 0.02 no artifacts during 20,000 repetitions 1203B 0.05 stable for 50,000 or more repetitions 1204B 1 stable for 200,000 or more repetitions Table C1 1 cr rn I in iL. E oo Layer- used flow- charge- layer- layer , il X gases velocity flow velocity formation thickness SH rn> E o ~ ~ ur life relationship <W / cm2) speed r iu ub R / digkeit min) (nm / s) cTJ L1 \ r (rl e SiH4 / He = 0.05 5iH4 + GeH4 GeH4 / SiH4 = 3/10 0'l ,, 8 0.5, .fiH. I xn o> II m 3 4 sr 11 n 0 NO NO / <GeH4 3t iH4) = 3/00 tn z \ cn z a) k TCI + -c ( ¢ O lv in = w ~~~~~~~~~~ rn ea) o U c (c, C3 <u SiH4 / He = 0.5, | -ri V) from 1.5 20 I C3 0 OY 2 C c Q) ru XO -c ( aa mmz I. QI moo SE ooo , uiu O Fi H W 3-, l + ll ll rS @ E vvv uuxz ::: no 5: v {n O o ~ i ~ l en ~ i ~ i J a) ox ZE u) 11 en v. n moc, - tn tn n oo I tn en ov X o - v fi oo, voo O 11 | ll 11 t QOQ v tn: Cr: v = X e, @H @ N o rSi B >i; O uz, U, r, z its in U = O z SD U 4J UH w ,. § i iH en Pc o S l to 3 u s -,, s (li bss u u mu , i Pi h Si tSn ti (I) 4qDI0DS aqdlow < Table C2 oD c -lr E cr v, CU = i 1 O -r - rc rßa Icnc , Flow charge layer used é 0 -r (ar gases ci en. RXt ity ratio 2 oa- 1 I. min) (nm / s) (Norm-cm3 / (W / cm) density (m) First fi SiH4 / He = 0.05 SiH4 + GeH4 Gefl4 / SiH4 = l / l0 0.18 0.5 1 I sn o <B2H6 / (GeH4 + SiH4) = 3L) C ' Crc o C C5 0 s H oxo O: a -r (zr c ( u, C rß Qc r (c ( NO o 11 v tn ll e:> v ~ + sr 3u, , H fi -i Ci, s Second (I i GeH4 / SiH4 = l / l0 0.18 au n U iC DOY 9) Lc I 1 X 3C Li m X 5 i O afa cn mnz C mmz I SiiI4 / He = 0.5 SiH4 = 200 0.18 1.5 5 aln: S :: o z CE ¢ i ai O , -i - i fi ot, i Fi W 3 ,, il ^ + + ll SSOE v sr sr uu A xo X Ll {n> o-, 4, 4 In HU) -rX PwJ zD - i Z eu) 11 rn 11 uz G mr - ur xin to ur tn ooloo ur @ voooo O 11 ß 11 tl 1 * 'c O ¢ to ¢ t @ ¢ a O \ \ xxv 3 0 v er @ mr mr «; r o gt, xo N o rwi ¢ t, o > r) rn r) lr, Z rn rv> rn wvv soz ai s @ uvu 4Y o w, x, W, x , i th SU ¢ 3t SO Li O s -, X rn s rn a rn o tti Hi Q o ^ (I) 44DIQDS aqdlow tea Table C3 I. cl c UXE Si o c (CE s: U cu o 0 -1 'N cna 1 Icnc U3CQ) VI In In r (aor \ c 6 rc rn t E o U c (Q) r (C I. 5 gases' T \ (V E, G, <Normcmmin 3 / o [1;: $ a {S d <igSkeh} t (m) O I tn et c 14? H e <4 / SiH4 = 3/10 0.18 ll 2 CH mr 3 vv ll tH oxn I E o rc O Ll m + -c (cJ tTl 'a, aa rn a Q 2 I + rn Q) 9 H wr ~, 4 u F rn ~ n O n NO aJ <GeH4 + SiH4> = 1/100 U 9 \ oo \ o kO \ -iH Q to xo it a Q) NXON aa For SiH4 = 200 0.18 1.5 20 I. e I rn m O ^ i ~ E aD o 9 HDU r) A W 3 F l + ag SS o E vv UUX h COX Li tn mo ~ i, 4 to ~ -JO wI z E rn 11 rn iS ¢ t u) un nn ool ur l aJ - - o - o D oo H oi C) 11 11 11 11 11 r ¢ i aw tli a ce 3 0 s D v k0 h en XXXXX @ eeio wH N > r) rn rm Z rn m 1 @ o fi o 4J H -i -i s Hi r ¢ rn t3 rsn ue, n o, (I) 4qDIqDS aqdlot Table C4 Sample no. 401C 402C 403C 404C 405C 406C 407C 408C GeH4 / SiH4 (flow speed 5/100 1/10 2/10 4/10 5/10 7/10 8/10 1/1 relationship) Ge content 4.3 8.4 15.4 26.7 32.3 38.9 42 47.6 (Atom-%) valuation : excellent: good Table C5 Sample No. 501C 502C 503C 504C 505C 506C 507C 508C Layer thickness 3.0 nm 50.0 nm 0.1 µm 0.3 µm 0.8 µm 3 µm 4 µm 5 µm Valuation # # : excellent: good #: sufficient table C6 for practical use c, 1 c u N -ri 21 E o CU h ( I rn C: C: r- 3 Hio u) u) u rchfluss- 5 ^ s Q nv build-up gases o Dghflß5h stung formation thickness cccmE 0 r (Q) c (C rn R i X ~ v ,, (m) min) <nm / s) First Layer SiH4 / fle = 0.05 SiH4 + GeH4 GeH4 / SiH4 = 5/10 T> 3 2 Dead = 50 1 B2H6 / (GeH4 + 5iH4) = 3 fi v ll un o 3: AI U: rd r (so - cn C NO Li (GeH4 + Si}! 4) in + ~ i X ¢ Q1 11 v rn rm ci + II m Q) Second C3 r iu SjH4 / fle = 0.5 SiH4 = 200 IC ur \ OOY tt PH3 / SiH4 = 9xl05 0.18 20 3 Q) NX OC La C3 v) ZP I. (Sample no Hi fi or ~ i N W 3 H l + ll S, COE vv OOXL "~ X o ::: h iU} tD O Hi e -, 1 ~ io -ti Z en 11 rn En ln no OOI ur rn <0 ai ~ o ^ I ;) O o 4 OO h @ 11 GI li 1 ~ Z X Ç O tF 3 OK sov \ O hin: nxx :: nz , v, r * HX iN oxn > O vz U mzv) X 4 u 4 y u S 2 &, so 3tá iD ta ~ n su (I)) DS aqdlo u) e left Table C7 c> UQ) c E Ln n L: U -i U ri ~ rna IcnC cl t-1 c, nm UQ) VI r (3US (\ O r : s: tn OE U r (Q) - C rn PIY I. (n / A cr, r (SiH4 / He = 0.05 SiH4 + Ge} i4 GeH4 / SiH4 = i / 10 - oHo o o = 50 -3'C t II ' 8xlO U: ar (9 o NO Li (GeH4 + SiM4) cn j do + II in I iO vv -cl C3 = each u H n Sik <4 = 200 ur 9 'u, OV Lt Lcc \ m a, PH3 / SiH4 = lxl05 0.18 X a XVQ a :) z iN I \ sr D c E o ° H-, t sfi UON v 3 4 l + ll S. <o E tv UUV Li CXO ~ 4 ft io 9 wF n * : o 4 ZE tn un a mr ~ ~ , n in n ool ur o ovo - l voo H oo @ bI 11 11 11 ~ too OO ll C 3 z ~ r ~ al o \ XX \: r 3 0 v er K0 sr \ S4 in 3:: 2 ~ r ~ o o X oF QN ox > O, X iJ m Z (n ffi 4th JJ3 W3 l iks 3s s: s X u] su) u, r, 0 q Q o H (I) 443l4DS a4dJow (Sample no. 602C) Table C8 rJ U 1} E o Cu i U r (n) u) a ; flow charge layer C 3 -1 in sn U3C Q) rn structure of gases x \ o ~ C r (v, 0i E U-r4 iO-F Q) - C (Norm-cm 1 speed inwN - X First rg SiH4 / He = 0.05 SiH4 + GeI4 GeH4 / SiH4 = 3/10 in 0.5 1 c (= 50 oo I v, 3 c, II I NO NO / <GeH4 + Si ~ - ~ r X mm 15 W-, 4 SiH4 / He = 0.5 L) -r (C3 -c ( 0 -4 so H / IIe = iO3 t 6 / 51H4 = 3x10 os 20 Lttr \ = -I \ u 2 c E oo HH fi u PN W 3, xl + ll SS o E v sr u ux vcxox S nm 0-tj .rn -, 4 qz E vn 11 iOn sc - in uo in <' ooo H o- lo O 11 11 11 fa = Cf XX OK o3 @ o \ \ £ L, ln:;: xxx O e 9 o @ ~ > u ifn vmz ifn X s is s X Ui JJ U s: X su 3 U UQ u D (I} 443 S 84dJow fn e (Sample No. 603C) Table C9 O o ~ H | H | In u, s rß Flow rate used t -t ------. , +1 gases tT \ -rl Dgh1fl5ßSh1W5 power educational thickness UL: Q) cn r (aor \ nr / i Ln u :: ss O fn , 4 fa o X \, nn rn SH rn tr E vv min) r ((nm / s) First SiH /! E = 005 SiH + GeH GeH / SiH = 1/10 0.18 0.5 tncy fi go 0 rn 15 3 6 /! E = l0 B2H õ õ O ) o Iro nc NO N0 / (GeH4 + SiH4> = 3/100 5 ci ri I I = oh O o u: rrd H t H cn r: rß eu, x Q z + H <+ rn t SiH4 / e = 0, OS 11 v rn 4 GeH4 / 5i114 = l / l0 11 mr 19 C> v @ + vv rn Q, a, , -1 ßJ -, 1 rK l = 50 iu ri rn Y In ar cn V In ca, UXH vo o; r @ o ND rJI = T c ( = 1 r (QNXO a, NX m oa L3- (Z'3 mrc 1 Third m layer U t C3 iu 3 - (I - + + i 1 B2I6 / IIe = l03 UU vh COXO ~ bk tn cr] 0 ^., * tn .ee rN - { D o ox ZE m 11 rn ll m rn, n r-) n un rn rn oo I oo I In o - - o - X ovo D oooo, q O 11 11 ll 11 11 ll t XQO o O oo rD O 3 o Q vv Q v Q : rn rJ mz rn U m rn Q r fi 4J v S o CG) C O u fi uwu 4s 44 pl 4 l X sos F z ~ C z U 3 U h O U ra .. su (r) 44DFQDS aqdJor rS e (Sample No. 701C) Table C10 . = F ~ ri x E c (c (y v] Flow charge layer layer layer used structure gases cm v C r: 3 r (- disability behavior D so uz n In In Lt) aur \ C r (cn E oo o nw H ca, c in Sa mt C-- First z SiH4 / He = 0.05 SiH4 + GeH4 GeH4 / SiH4 = 3/10 0.18 m E. t Dc 'D rS 0 0 0 GeH4 / He = 0.05 D o B2H 6 / He = l03 B2 H 6 / (GeH4 + 51H4) = 1x10 NO No / SiH4 = 3 / l00 ~~~~~~ o ta ~ 4, 1 0 HO 0 o1 ~ I en, c SiH4 / He = 0.05 5i114 + GeH4 GeH4 / SiH4 = 3 / l0 ar k ° \ O m O h rn + H ~ o4 ~ 1 1a5 'GeH4 / He = 0.05% NO / Si! 14 = 3/100 C3 $ 9 mr? m 3 rn 2 II = II II ~ v C rn v, 4 vv H r u 9 t "I 5: fn ~ x fn m iu ri 'I 2 V) 2 V) C a, oc (-c ( h Sil! 4 /! Ie = 0.5 SiH4 = 200 NO / SiH4 = 3/100 0.18 1.5 X : H dW r. N ~ O NO at rJ m 11 z to zz: n 1 6 / He = 103 B v c I m s. oo : D SiH4 / He = 0.5 Sit! 4 = 2Q0 B21! 6 / SiH4 = lxlO 0.18 1 o 15 Layer as UUL i C 5: 0 2 o Z Lx W m 0 ^ 6 In ~ L-). ,, l, 4 zw 9 z E m 11 m 11 rS m n mm n L ') In tn rn rn OO | OO L '') I In I C o X vqoo D oo <ooo H o < t 11 11 11 11 11 11 11 11 11 X nw nw OO nW ° WOO C r wr r X ~ = X = 3, v sr xD v sr v ko v kD zmxx = r 2 = O a ,, nW to O, 4 Nw O ~ # o N 4 3 > z rn ti: m Z cm U z rJz Z m uz m ou 4Z o fi uvu WH -l * -4 EF 6 rS S ak s -1 s nw c ßJ h U 3 0) s1 0 ~ I o s 2 X rn N ma rS> n u rts « H n cu (I) 4qDF0DS aqdIoE rn ta to O r H z O Table C11 c, lr from a ImC ity 0r (c, c C 3 H ~ In S In (Norm-cm vvv min H (nm / s) First Layer SiH4 / He = 0, Os rw-H GeH4 / SiH4 = 3/10 c cu U g Ú co 0.18 (d ci \ L) r (, n 3 ~ oo 1 B2H6 / He = 103 3x10 e41 4 NO NO / (GeH4 cn u 3 3/100% 2.83 / 100 r: rc o 1 c 0 0 u: rd -ri - a rS LX tS SXX rW z rn + SiH4 / He - 0.05 a, II rn rn H cd + L. 91 + c2> sr + ^ v + ( : 5 rn TO v N ~ q O E. GeH4 / He - 0.05 uz NO / <GeH4 + SiH4 rn NO 319 \ oo - o rr - m I r (1 vms ~ X \ 0 2 ~ i nw NQ, O aro SiH4 / He = 0.5 SiH4 = 200 rss Z 19 elm X o D c E nw nW ° H 9 vus rsa tlN u 3- I ~ + + 11 UUPC ~ p ~ O: h fn mo H tn H In, 4 D @ HZE 11 11 m a mr ~ un X Lr ooloou) na WHERE ~ | oo H ooo rD 11 11 11 11 11 11 XO wl wz (wn I nx 3 0 ~ fv vD vvv ; rS = s X s ^ -1 w rN O., + RV ° -4 nl Ir] r; m Z rn z Z rn I. S nW COC nW U fi U v U W ol x YY-, l tn S w SHS W to 3 ozu S 2 X rm N ts a rn u fa. H n s W (I)) DIQDS arqdlor n ra (Sample No. 801C) Note: NO / (GeH4 + SiH4) decreased linearly.

Table C12 UQ) AI rir E or rn U rl 1 < V1 a - gases - DuhflßSh15 - formation thickness Irnr = In clrc sc (W / cm C a, vr In min) (nm / s) 1 V] t E, o First SiH rC5 FA, rn, r "= 50 B g ° 26 u 3x103 r (cn 3 4 ci -ri O4 o to Second C 3c, s H o 3 = 50 rnC v) E vi Qk + r (+ rl B 2H6 11 s 11 et ll C1> + rn ~ IQ) a, r IC ocr t3 r ( WH rn n rw eu] ~ e xn CO \ \ SiH <U SiH4 + Ge! 14 GeH4 / SiH4 = l / l0 0.18 0.5 19 r: a, \ I C3 o \ I Shift - GeH4 / He = 0.05 zzx a = 50 ct O mnzn cn 3 n O Fourth 1.5 1 SiH4 / He = 0.5 SiH4 = 200 \: rtv D c E r = (v ~ oo ~ 4s 0 z rs r) N W 3 l + + + ll .CC GV E sr sr v: r OUZ h C =: O NC OO ~ h rn tr OH un - LO H L ') ~ I D nw HZE rn 11 rn 11 m 11 uz n mn tn, nm rn zn rs LF to ooloo | oou) G voovv fi oo <oo H ooo @ ls 11 | 11 ll 11 X rD OQ rV aJ tJ r, D tü O c 3:: 2 3 @ v sr vo sot mr v X rd. ~ {Q r.> O ,, 4 QN Pi rB, * > rO uz z uz U m vz O uz fi 4Z fi w SUS r: JSOS ev u + J u 4 u fi u td @ 4 d 24 rn J: US '= rD fC lh U 3 U h U -d U r 2 X rn e4 uz CE uz> ran ue n <W (I) l S at {d '° And rn approx a (Sample No. 802C) Table C13 c, I c u H ccx E r (o U r ('N rß a 5 IcnC J ir (cl CC 3 r (- U = ICQ) UI un vr First In, I W 51H4 / He = 0.0 GeH4 / SiH4 = 3/10 do 3 a ° + GeH Ov 18 -3 BH / (GeH + SiH) = H B2H6 / He = 1O = 50 5x2l60344 NO - {ll ll <cv 3 c, II I r: rc ooo ri a <et ~ ~ s H rn SiH4 / He = 0.05 SiH4 + GeH4 Gefl4 / Si !! 4 = 3/10 ¢ \ ru \ rn X0.5 a, km + m + N GeH4 / He = 0.05 to = 50 0.18 c3 $ + 2 3 cn r O) e L: Q, Z B c, r (C3 B2H6 / (GeH4 + SiIJ4) = w ri v, Ym O, v] -mv) CQ, \ I C3 o \ I UX 9 \ 0 OYO cD O u) 2 D -r IV NXO \ 0 c9 XN a3 SiH4 / IIe = 0.551114 = 200 m 1.5 BH / He = 103 B2H6 / SiH4 = 2x10 0.18 Q I sv sr elnzo D c £ o oo 9 $ u ON W 3 H 4 ~ + + 11 tz ogvvv oo X sW C = oso z X r 0 -1 ~ 1 SH n .H : OZ EE rn ll rn 11 rn S un x S ur xn oo I oo I en I U vovvovo 4 oo H oo <o H rD 11 11 11 11 11 11 11 11 toooo at rD OO 3 0 v sr Q vv tD s ; tn :: x: n :: svs: S X r H u N o sH ON * HN > UQ) U az z sn UQ rn m + w fi 6 u Nc X < @ u fi u 4Z o , C 2. rs r: n O ue H n cu (I)) l {Dl q DS aqdJourV.

(Sample No. 803C) Table C14 Y, rn u) ro 08 U) U} build-up of gases vibrating flow velocity charge layer r flow- leti uu et stung formation thickness nn "~ (mN 3 speed in) aJ 03 First Layer ol oo auoo O I mo B2H 6 / He = l03 B2H6 / Si} i4 = 3x10 m u NO cr I hl OI mC XO m X eusxox £: Second a) Sill .. 1.5 oo layer | 4 = 200 s 1 cl cl -rl H 4, =, X 1 Wd tU] tvz: C 3: U] UX 9 IDV] U] rD UX B2H6 / SjH4 = 3x10 \ 0 h tr} ~ SC ò 0 N c] t O sc zzm I s et X l tm o z CE @ o d 4 »u O to SSU É + sr ou A: ss c: = o =: h en bo I .e tLn, 1 zudz E u ll m n 08 r to tn ool to @ v - oo voo H o H u | ll ll ll X a) tv a) tf Q 3 X vv @ v @ @ en =:: n = ts 4 * tf zo oo « :> U uz O mzuzm 4J fi s @ s a) u fi u 4th SD 'ns 3 u u fa. ~ F .Q s ut (I) 4 S aNdJouw u] tt (Sample No. 804C) Note: NO / SiH4 decreased linearly.

Table C15 e3- 1 r Flow t charge stratified. 4 gases c, n Ln rn c C, 3 cr - ocav, o = (Norm-cm3 ouxo c H tn lt min) c C rß a ta - vr, 0.4 / He = 0.05 SiH + GeH GeH44 0.5 a5u m co E 0.18 r rn 3 4 4 0 lxlO5 I v, 3c, II I 5 ri o C oo u SiH4 / He = 0.05 SIH + GeH GeH rn cn s: rn x ok 9 + 9 H + = 50 ai a, rn II cr II QS csZf 92 D rn S tv v = tv = ci c, j -I C1 C3 w Y C a> o \ I oxv to oov Q o £ vm 2 =: H o ~ s: z: ~ =: D98 u N xo \ tv t, SiH N or 6 / He = 10 m 6 / SiH4 = 3x10 l \ vv C lnsro DCEO tV O f r <,> O ts N W 3-H 4 + + 11 CSOE v er v u uX vcso = os z tn r 0 -4 -t, n, 1 to H 2 tv-9 Z EE n 11 tS 11 tz n S un m en In C1 n ooloolnl 4 OO 9 OOHOH o | e tv oo tv Xv tv uo vsxs :: ss 3 Q vv Q v ¢ sv Q L rn 2:: SS z Uts rb tV r4 0 HO to -1 to4 :> z en ts sr z ts UQ tn az = tv vc o = tD O fi UWO fi oì - 4 »F , C: 1 nc 3 va 1 Location H a . m U (I) lt, lD5QDS aL {ti.lOtU \ 2 ' (Sample No. 805C) Note: NO / (GeH4 + SiH4) decreased linearly.

Table C16 Used flow rate flow rate discharge layer condition gases speed ratio or area per- formance thickness speed (standard ratio (W / cm²) (µm) cm³ / min) 12-1C Ar 200 Si disk: graphite = 1.5: 8.5 0.3 0.5 12-2C Ar 200 Si disk: graphite = 0.5: 9.5 0.3 0.3 12-3C Ar 200 Si disk: graphite = 6: 4 0.3 1.0 12-4C SiH4 / He = 1 SiH4 = 15 SiH4: C2H4 = 0.4: 9.6 0.18 0.3 C2H4 12-5C SiH4 / He = 0.5 SiH4 = 100 SiH4: C2H4 = 5: 5 0.18 1.5 C2H4 12-6C SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 1.5: 1.5: 7 0.18 0.5 SiF4 / He = 0.5 = 150 C2H4 12-7C SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 0.3: 0.1: 9.6 0.18 0.3 SiF4 / He = 0.5 = 15 C2H4 12-8C SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 3: 3: 4 0.18 1.5 SiF4 / He = 0.5 = 150 C2H4 Table C 16A Manufacturing conditions of the amorphous layer (II) Sample No. / Evaluation 12-201C 12-301C 12-1C 12-202C 12-302C 12-2C 12-203C 12-303C 12-3C 12-204C 12-304C 12-4C 12-205C 12-305C 12-5C 12-206C 12-306C 12-6C 12-207C 12-307C 12-7C 12-208C 12-308C 12-8C Sample no. Overall rating rating the image quality- the durability- activity Evaluation standard: ... excellent ... good Table C17 Sample No. 1701C 1702C 1703C 1704C 1705C 1706C 1707C Si: C target 9: 1 6.5: 3.5 4: 6 2: 8 1: 9 0.5: 9.5 0.2: 9.8 (Area ratio) Si: C 9.7: 0.3 8.8: 1.2 7.3: 2.7 4.8: 5.2 3: 7 2: 8 0.8: 9.2 (Salary ratio) Rating the image # # X quality : very good o: good: for practical use X: generation of image defects use sufficient table C18 Sample No. 1801C 1802C 1803C 1804C 1805C 1806C 1807C 1808C SiH4: C2H4 9: 1 6: 4 4: 6 2: 8 1: 9 0.5: 9.5 0.35: 9.65 0.2: 9.8 (Flow rate relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Assessment of the image x quality : very good: good #: for practical use X: generation of image defects use sufficient Table C19 Sample No. 1901C 1902C 1903C 1904C 1905C 1906C 1907C 1908C SiH4: SiF4: C2H4 5: 4: 1 3: 3.5: 3.5 2: 2: 6 1: 1: 8 0.6: 0.4: 9 0.2: 0.3: 9.5 0.2: 0, 15: 9.65 0.1: 0.1: 9.8 (Flow rate employment relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Evaluation of the X picture quality : very good: good: for practical use X: generation of image defects use sufficient table C20 Thickness of the Sample | amorphous No. Layer (II) results (µm) Propensity to generate 2001C 0.001 of artifacts no artifacts during 2002C 0.02 20,000 repetitions stable during 50,000 or 2003C 0.05 more repetitions stable for 200,000 or 2004C 1 more repetitions Table D1 I. cl n c 4 Layer uses flow, flow, discharge b S - Gases speed rate power formation thickness cr t-rc c, qeschwin- digkeit zuv va, m min u (nm / s re CrlrntE Layer a 4 4 I = 50 cn 1.5 10 DC CD aD O) X DN 0 0 Amorphous SiH4 / He = 0.5 SiH4 = 100 5i1I4 / C2H4 = 3/7 c, E 1.0 0.5 fi (11) C2H4 C @ 3 XH Where \ a) X 9 n ts \ N h S h CD er D e Ow oo sse I o: 1: 5 z @ Hz E m ll m X .n mfn ~. oou) Ln @ oo ^ o o- X5 illl: K:;: 3 @ vvvvv h U} 3 xz = :> O, 'ul O' xn 'u] s O z @ u W fi Od ¢ H u} s O s H lh U 3 U ~ fi rw u) eq cn s D @W ue ss s W (I) ffi u UD) 4DI4DS o S uz e aqdlow Q u Table D2 1 I. cl U (Uc q, o -rcX E 4 OW II CIr (L, C3c (- nn U 3 CQ) a -r (auro CcnbB cn a acr -; I. m tT 7C c 07u ao <x> rd UE c ( -I V1 O s CI c (\ 0 0 r: a, 3 Wrc I. Shift Flow rate used, discharge rate U) II 2 iu r: rc 3 o (Norm-cm 1 speed n First SiH / He = 0.05 SiH + GeH I 4 4 4 GeH4 / SiH4 = 0.18 0.5 8 olm too o Second 1.5 10 Layer a, E 9 h 01> O '9 H u =) ~ 4 zo -HZEX 11 m n th ~ ur tn oo tn fi ooo O 11 ll 11 3ul x, X, \ .r > c) -0 O u] 4Z soz ou fi u YY H - r 4 h U 3 U s 2 mm Nm un - s W u (I) 14DIqDS . ~ aqdJouw Table D3 Shift Used Flow Flow Discharge Layer Layer Layer build-up gases speed power formation thickness speed, ratio speed (µm) (W / cm²) (Standard cm³ / speed min) (nm / s) First 0.5 SiH4 / He = 0.05 SiH4 + GeH4 GeH4 / SiH4 = 4/10 ~ 0.18 2.0 layer GeH4 / He = 0.05 = 50 2/1000 Second SiH4 / He = 0.5 SiH4 = 200 0.18 1.5 20 layer Table D4 Shift Used Flow Flow Discharge Layer Layer- build-up gases speed power educational thickness speed, ratio speed (W / cm²) (µm) (Standard cm³ / speed min) (nm / s) First SiH4 / He = 0.05 SiH4 + GeH4 GeH4 / SiH4 = 0.18 0.5 2.0 layer GeH4 / He = 0.05 = 50 3 / 10-0 Second 1.5 SiH4 / He = 0.5 SiH4 = 200 0.18 15 layer Table D5 I. cr ua, 03 cuE oo rnOl I. 3 2 speed (m) c olc (c, (W / cm 1 = 1 quality min c soo u) -r (aox \ z H to ¢ E u aJ c mQ layer SiH4 / He = 0.05 SiH4 + GeH4 GeH4 / SiH4 = 8/100 f 0.5 C I. a7N Si? 14 / He = 0.5 SiH = 200 <W e ~ H <u) uc) o le oxX 0 s 93 s X h S h O u U ~ oo s In Ur O o'o- o ' 30 t- \ D . O Õ v U fi, 1 o <: X ° oq r ue H n tu D (I)) DS u] U atldJouw Table D6 I. u] X C. Ua, r (iC c r: UE Qi In s S u] ¢ c u ^ o ^ II IU) C + r tc (CI, rn In 0 3 CQ) - ux E L1 2 build-up of gases velocity power biungsdicke zC 3 ratio (W / cm2) speed (Norm-cm / digkeit min Ccc h layer SiH4 / He = 0, S SiH O Layer SiH4 / He = 0.5 c E ~ õ S 3 'E + N a ° fi Z É uz ur ur oo tn fi ooo o | ll X ooo si ~ :> O u] O u] d D 4 SOS ou 4Y u lu} sos S h U sr s etc. u D (DF q DS Table D7 I. = 6th among others, rna- c ( 1 I. CC 3 ri -u SS H tuxvv min X nm 5 u First SiH 0.18 0.5 c Q) R CX X ll U U c g = N 0 SiH4 / He = 0'5 ru e WEH 5 ~ H u} fi 3 oo e 4) o > X su 3 se \ au,> ~ e 2 CEO or similar n Õ ZE r ° tn tn zo O = - - s oc Q u fi u S Ul S 3 S MR u D (I)) NDFQDS en e atldlouw Table D8 I 1 I. ß - - oa, -r) X c 0 0 CUE ri 0 -rl via- II rn rn lu) C ~ C e - L) 2 build-up of gases velocity power biungsdicke 3 2 \ o age ratio x en vD (Standard cm / ci a L) c ( min) (nm / s rste $ 4 5i2H6 /! Ie = 0.05 5i2H6 + GeH4 / Si2H6 = 1% 0 0.18 S 10 -roa, a, au >> ~ O <CI I H width W 3-, l + un N for to Sill4 = 200 s O e - ,, 10 UUX h C = vt h Ul ¢ 0 o4> = ~ : XHZEHOH a mM uz OQ] w ur - o ur o oo o ' 3 0 = r \ h ul to ~ > rO uz OV] ou 4Z u l WH - u ra, 41 rn 3 u s W uz (I) RQDTQDS aqdJowe Table D9 I. c, oo among others, cuE rl U -r (gases speed power formation thickness YY C) I speed I IcnCr min) (nm / s) First SiF / He = 005 SiF 3 G eH / SiF = l0 0.18 0.5 U3C Q, oi xo Shift tr 4 4 44 u H o HC uz width - 1.5 v, SiH4 / He = 0.5 SiH4 = 200 0.18 10 c CS a 4 E rxz. fH uuoo l. O r. : r O au> rt o ~ - U tD r ° s SS õ E [4 o =: D o ZE rn 11 m S. ur tn a) oc o O 11 11 11 30 oo r z (n N vt @ U ¢ H o oH > O u] O u] 4Z osu os v 9, 1, 4 SD h UOS. ue H n s WI)) q D, T q DS , v] <aqdJouw Table D10 I. u <e H ~ r (A CuE oo U cr SC 3 H tn ul II IV) C C r: 3 ri v, In In U 3 C a, \ - 7! ur E o C, - (rn t C U ri a> c (- a tra from left ca \ aru ao A. rß gases speed power bil, ungsdicke cl I ri + omx u) xt min 1 - { First SiH4 / He = 0 'Os SiH4 + SiF4 GeH4 / (SiH4 + SiF4) 0.18 v 10 H layer Sii'4 / He = 0.05 + GeH4 = 50 \ mro U3 Z 3 U a, Os | s he Second SiH4 = 200 0.18 I n L oo DCEHS or similar W 3, <IU ~ + v rs ss @ E £ rv UUX h C 2 0 X h {n ¢ o -HH z H D o HZE en + rn a crt just ur ooo tn Q v W oooo au | t1 toooa) cx 3 7 «x 3 0 v sr vv h Ul X C4 3: X o ra o -s > O u] uh SOS ouvu lv 6 r W en S os Su na h U 3 U sn u D (I) 4 TQDS Table D11 Shift Used Flow Flow Discharge Layer structure gases speed performance educational speed ratio speed (W / cm²) (Standard cm³ / min) (nm / s) Second 1.5 SiH4 / He = 0.5 SiH4 = 200 B2H6 / SiH4 = 2x10-5 0.18 layer B2H6 / He = 10-3 Table D11A Sample No. 1101D 1102D 1103D 1104D 1105D 1106D 1107D 1108D 1109D 1110D First layer Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. 130 131 132 134 135 136 137 138 139 Layer thickness of the second layer 10 10 20 15 20 15 10 10 10 10 (µm) valuation : excellent: good Table D12 Shift Used Flow Flow Discharge Layer structure gases speed performance educational speed ratio speed (W / cm²) (Standard cm³ / min) (nm / s) Second 1.5 Layer SiH4 / He = 0.5 SiH4 = 200 PH3 / SiH4 = 1x10-7 0.18 PH3 / He = 10-3 Table D12A Sample No. 1201D 1202D 1203D 1204D 1205D 1206D 1207D 1208D 1209D 1210D First layer Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. 130 131 132 133 134 135 136 137 138 139 Layer thickness of the second layer 10 10 20 15 20 15 10 10 10 10 (µm) valuation : excellent: good Table D13 Used flow rate flow rate discharge layer condition gases speed ratio or area per- formance thickness speed (standard ratio (W / cm²) (µm) cm³ / min) 12-1D Ar 200 Si disk: graphite = 1.5: 8.5 0.3 0.5 12-2D Ar 200 Si disk: graphite = 0.5: 9.5 0.3 0.3 12-3D Ar 200 Si disk: graphite = 6: 4 0.3 1.0 12-4D SiH4 / He = 1 SiH4 = 15 SiH4: C2H4 = 0.4: 9.6 0.18 0.3 C2H4 12-5D SiH4 / He = 0.5 SiH4 = 100 SiH4: C2H4 = 5: 5 0.18 1.5 C2H4 12-6D SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiH4: C2H4 = 1.5: 1.5: 7 0.18 0.5 SiF4 / He = 0.5 = 150 C2H4 12-7D SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 0.3: 0.1: 9.6 0.18 0.3 SiF4 / He = 0.5 = 15 C2H4 12-8D SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 3: 3: 4 0.18 1.5 SiF4 / He = 0.5 = 150 C2H4 Table D13A III - 3 0 C IL (I. , oH oorod S o D - c, o ~ of sample no. / evaluation Layer (11) oaaa (rZ, l2-30lD zztffi aoa 12zD o l2-701D 12-801D 12-901D l2-1001D ONOmO or similar 0 0 OC, O 0 0 3 ~ s, o1 ~ ~ 4 -1 ~. H o N o N o C, co, N r: o; c: or: o r (r (r 'rl ro O 0 0 zz 0 0 0 0 0 0 0 0 Yes oo 0 0 r-1 r (rSt 12-504D ~ 4 ~ ~ aoa Cp '@) o Co @ oa (õp m (òs 2 OG g C0i o å o 0 0 OCOQ tN 12-3050 tSJ tÕD rJ zuN 12-705D O c: O e? 00 1 ~ ~ Co, 'Qo o-1 öb J ~ d. ~ ru l2-206D, 12-4060 (fi) c O ao tU vD D vD Qa) vC QD XD | xD ~ R tN O tN O tN O tN 12-407D do N (i,: tN ONO Q) (U / NNO ao t2N oo oJ 0 oJo a 10 0 JO 0 0 ooo Yes L rn rn ui- -Irrl LI1 -Ui Ui Ln ZI IIN c: (o) N oJ o X o 0 0 0 0 0 rl O tN rl 0 0 0 rsN ONO a) rQ rP rl «1 rdq rQ ~ I ~ oao Q oaoa (a tb ã @) coao X oooc) c) c) oo v, * v ss 9 er ~ v ~ £ F1 O tN O rJ O <N rb tN ta rN tB rN O rN O , H, v otq tq bd, -, k aoaoaoa (ba 9: qó, aoao oo ~ o. cD. cD ao ~ o ~ tN O tEl O tN O tN t ÒJ tN íO) N% N q O tN O HH ~ H ~ H 9 ~ ~ H aoaoaoa (E} ao, Dz WÒJ C) O ao tON mO tN C '~ ° ~' N. to4 ~ tN ~ t O tN O tN O r> t @) N, ~ ~ O t O c oC ce D g g ° H ca) taN aaaaaa , <r fal tol tN tN (N tN rJ tol p XO ~ I ~ 4 ~ II rl rl i t HE X DD (2 Sample No. / Rating Overall rating of the image rating of the quality durability Evaluation standard:: excellent-: good net Table D14 Sample No. 1301D 1302D 1303D 1304D 1305D 1306D 1307D Si: C target 9: 1 6.5: 3.5 4: 6 2: 8 1: 9 0.5: 9.5 0.2: 9.8 (Area ratio) Si: C 9.7: 0.3 8.8: 1.2 7.3: 2.7 4.8: 5.2 3: 7 2: 8 0.8: 9.2 (Salary ratio) Evaluation of the image X ouality : very good: good: for practical use X: generation of image defects use sufficient table D15 Sample No. 1401D 1402D 1403D 1404D 1405D 1406D 1407D 1408D SiH4: C2H4 9: 1 6: 4 4: 6 2: 8 1: 9 0.5: 9.5 0.35: 9.65 0.2: 9.8 (Flow rate relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Assessment of the image X quality : very good: good: for practical use X: generation of image defects use sufficient table D16 Sample No. 1501D 1502D 1503D 1504D 1505D 1506D 1507D 1508D SiH4: SiF4: C2H4 5: 4: 1 3: 3.5: 3.5 2: 2: 6 1: 1: 8 0.6: 0.4: 9 0.2: 0.3: 9.5 0.2: 0, 15: 9.65 0.1: 0.1: 9.8 (Flow rate employment relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Evaluation of the picture quality X very good good for practical use X generation of image defects sufficient table D17 Amorphous layer thickness Sample No. (II) (µm) Results 1601D 0.001 Tendency to generate artifacts 1602D 0.02 no artifacts during 20,000 repetitions 1603D 0.05 stable for 50,000 or more repetitions 1604D 1 stable for 200,000 or more repetitions s O - sx EH u to tn v IVIC 4th C 3 ri - rr, o ri Flow charge layer layer used structure gas 1Sh1 'U' flow velocity formation thickness tnn oL5 ~ ~ ~ rn Ho min 0 03 a3 First SiH4 / He = 0.05 SiH cl GeH4 / SiH4 = 3/10 rc Es- ooo I m 6 / (GeH4 + SiH4) = xlO ot r (cm 3c, Crc o U: rd rc r (II U) L: V1 3m SiH = 100 3: CU rl C3 iu r (V] Ym .. WC a, \ I ~ S -4 Q to x * n I s sr Eq cl 8 ts: = oo D <EO oo P u O tlM H W4 3-4 l ^ + ll ll SJ: OE vvv uo X vc 3: ov: s W rn ts 0 ^, 1 tn., 4, 4 D o F z E tn 11 tn n L. oolu) u) fi oo H oo D | ll ll eSV @ @ DX @ 3 @ v sr tD sr vv 24 rn =: C: x:: ID e F @ tN .H. to :> O (n O az tn tn cD a) O Ns H ì z SU d = H S: s W1 rn N tn ss ue - oWu .ahd u 2 (I) ltlaltlaS o too tn e aqdJouw Q r, n Table E2 Layer Flow Discharge Layer OO r used structure of gases Q c ore speed 3 I / digkeit (m) C OE tN First Layer ZuY r (SiH4 + GeH4 GeH4 / SiH4 = l / l0 3 ro GeH4 / He = 0 OS = 50 0.18 U B2H6 / (GeH4 + S iH4) = sH ovo O U SiH4 / He = 0 'Os SiH4 + GeH4 GeH4 / 5iH4 = l / l0 0l8 015 19 GeH4 / He = 0.05 n rn 0 Third OX SiH4 = 200 0.18 1.5 t SiH / He = 05 OI s he sr n D c E xx õ W 3 H 1 ~ + + 11 ScSc OE vvv UUV h C ro, O ~ z rn G 0 '- / - U1, i Ln - ¢ : ZE rn 11 en {1 tn u) ur only S X o- oloo S- voo ~ ooo O 11 11 11 11 11 11 n OQQ @ QQ C: X = X 3 aJ sr v £ vvv z X = v = r O n5 H (D sS ~, { > z tn r: m en rs en. C r IOI> (DUVUVU v> 4 H vC 5 X rSn 3 UDU] UQ r tu (I) 4 q DI q DS oN d] ow Table E3 I c, u - rcX E CUNO tn Mv rna r 1 c Pr (c, y) Shifts o Used v structure GaseX s C rv, t E cn, C tCJ a ~ CO) tN D c E e ta SiH4 / He = 0.05 SiH4 + GeH4 (; ejI4 / SiH D u co r4 ft- s AH - - - B Ii / He = 10 - B2H6 / (GeH4 + SiH4) = 26th u 5xlO3 vc SiH SiH 0.18 1.5 20 from left CX Layer 4 / He = 0.5 4 = 200 x Or 'Q) II II ¢ @ ll v ll C> tr v H; r ~ 4 WH tn ~, t, tn u X vuo vo id QNX tN azv W m S m lsv e I rn: n O D .c fi Su ON W 3- l + ll Sc s @ E vv o vX zc = ox L en vY 0 H., », Z ER tn 11 tn n mr - un n ool M í voo o4 o ~ tD 1l 11 D 11 11 frs tu @ (U tu tu 3 X vv W v Q al trs. 4, 4] N > O qn O m rn m @ QW u DH - l 0 <@ = vk Q 3 u c: s X tn s tn u trs dn oC W4 u D (I) lMalMaS aqdlow rn tts ~ Table E4 Sample No. 401E 402E 403E 404E 405E 406E 407E 408E GeH4 / SiH4 (through flow velocity 5/100 1/10 2/10 4/10 5/10 7/10 8/10 1/1 employment relationship) Ge content (Atomic%) 4.3 8.4 15.4 26.7 32.3 38.9 42 47.6 valuation : excellent: good Table E5 Sample No. 501E 502E 503E 504E 505E 505E 506E 507E 508E Layer thickness 3.0nm 50.0nm 0.1 µm 0.3 µm 0.8 µm 3 µm 4 µm 5 µm valuation : excellent: good: sufficient table E6 for practical use Ic 'I. c oa, flow rate used - flow rate - N layer - I 0 S gases speed ratio formation thickness U r (N tn t ~ II I rn C cr I c, First Mr. 0 3C 9) u) -4 X aor Zuu 09: s sH 0 OE ud = 50 B2H6 / (GeH4 + 5jH4) = 0.18 2 0 - Q) r (C vl trY C- I SiH4 / He = 05 I 34 0.18 20 rr5 tn 4 EE HH H m0 u X v »Cs oo c Q) 3 3 = oSw go H-3 VU vo oolu) m W - - oo lo t tl tu tu au 11 czx @ 3 do tn O mx v W s do s (u U 4 u rn S (UC lku 3 u 4 X1 rn s rn Sc D - H n u 2 (I) QiNiaFQiaS uz aqdJouw Table E7 Tcl I oa, cX- COE ny, 0 - 1 l 0ic II Irnc J tF O1Q) tn -ci aor \ o rrctrE U r (g) rl C <na rro - CI HH * uoo II rCV ao cO acnmE r (r ( cl t 'VO OI 0 a 1 0 Gas speed ratio Ln formation thickness I lei ': s5ung speed- (m) (W / cm) speed min) (nm / s) First Sii4 /} Ie = 0.05 v ~ ~ ri layer GeI! 4 / He = 0.05 = 50 B2H6 / <GeH4 + SiH4) = 0.18 15 rwS B2H6 / He = l03 tn YCP 1.5 \ SiH4 = 200 0.18 5 Qlm a ,, E o Ob ur cc o'sO v H - 0 = O < h O 3 U v L n N rn UQ tu D (I) QiMaFMas , rn <aydJouw Table E8 - < oa, u @ S used flow rate flow rate u layer EH u build-up gases speed ratio formation thickness cnadiaity l0c 'l min) (nm / s) U3I = Q) cn -r (SiH4 / Ie = 005 SiH4 + GeH4 GeH4 / SiH4 = 3/10 0.5 U ci Q) = 50 B2H6 / (GeH4 + SiH4) = (uF c nn ¢ Os c - l í> co -4 ¢ Ú ~ B2H6 / SiH4 = 9x104 0.18 c Dc (u 3 oo X t < I rn 3C O: 10 {i0uisq ~. X r> lì q- llet n rn sos H v 9 O -4 S (U rn v X UX sr sD O v0 v im s =: H s DH i'u N x N a X rp m ai a: i sv Q Inso z CEUO HH vu r-: N u 3-H 1 ~ + 11 SS u E er v uu X iC H sos i4 0 mo 8 F ut oX : 3 IU-H Z Ei rn 11 rn ur rn oo I tn I fi oo <o H @ | l | ra Q (u (u c = s 3 (U v sr vD s is rn S: = iu e H @ NHN : nsmnm 1 QW s' us (uuvu v4H - rn SUS lh U 3 U v X n N n u u , c W (I) qi qj DF q DS ne axqdJoury Table E9 V e OQ) rcX- ruE u, U1 0 r ( rna- II c t- LI rn n 0 3 C a, vr r (aor \ cl v, olE 0 c (a, I c: (0 P "C1 D. 51: arvlE e 1 u oo C9) 3 wa-c- I. r c ll c build-up gases or similar TO SPEED TO (Wjcm a ar min ll v ll c3 C L (IQ) C H (u HO oj Layer SiH4 / He = 0105 SiH4 + GeH4 GeH4 / SiJ4 = 1/10 0.5 cv, \ I ucr a of B2H6 / (GeH4 + SiH4) = 0.18 so a X iD ma N hl C3 ma \ m ov m'J SiH4He-, lns 5 ricr + lg 3 v ú o WX 3 - {l ^ + le S «C IU EX o £ h (U t Z 'E (n 11 n a ur tn ool ur l (u o- o <o- Ho v @ uu @ (u X s X * > rn sm N v (uu (uu vF 4 d 0 s F # c í v U a) u v X n e4 rn s D ue s W (I) lM3FQDS uz aqdlo = Table E10 <Ev -, rcx ENO CO N J rna IviC CC 3 - - OC Q) vl y, u) -rcaOY rn E oc First fi.s 3 o Cm = 50 0.18 2 u 2 6 / He = 10 3 B2H / (GeH4 + SiH4) = bra Icn o: e @ SiH = 200 1.5 cu 4 '4 0.18 20 D 2 !! 6 / Ile = l03 ON 6 / Sj! 14 = 2x10 = | s' W : CE = (ON CCOE. Io = n mfa - tm ool un l v - vo oX Ho 3 n õ oo ~ ~ N v sud. @ SHU WDX 3 3 U u (I) ltlaFtlas aqdlourV n < Table E11 Used flow rate flow rate discharge layer condition gases speed ratio or area per- formance thickness speed (standard ratio (W / cm²) (µm cm³ / min) 12-1E Ar 200 Si disk: graphite = 1.5: 8.5 0.3 0.5 12-2E Ar 200 Si disk: graphite = 0.5: 9.5 0.3 0.3 12-3E Ar 200 Si disk: graphite = 6: 4 0.3 1.0 12-4E SiH4 / He = 1 SiH4 = 15 SiH4: C2H4 = 0.4: 9.6 0.18 0.3 C2H4 12-5E SiH4 / He = 0.5 SiH4 = 100 SiH4: C2H4 = 5: 5 0.18 1.5 C2H4 12-6E SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 1.5: 1.5: 7 0.18 0.5 SiF4 / He = 0.5 = 150 C2H4 12-7E SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 0.3: 0.1: 9.6 0.18 0.3 SiF4 / He = 0.5 = 15 C2H4 12-8E SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 3: 3: 4 0.18 1.5 SiF4 / He = 0.5 = 150 C2H4 XX c XXSXX ° ° No ° ° ° @ ° @ ° @ ° ° ° ° ozo Thu - o oo o b1 O b1 ONO (9 (Q) (N @ N @ NONO X o - o X o X @ X @ XbS o X o oooooooo ae a lae o ~ o ~ oo JONO t1 O t1 6 N @ N @ NONO XONO n O v @ @ ~ g XOO oooooooo cxt co cx:> «) - 1« z lax cS) U) NO «-NO t1 ON (hi í @ N @ NONO C 9 ~ H ~ H 91 ~ H 2 WX o X o X o X @ X @ X @ X o, S o toooooooo 3 r> r- b rs. rv> b sn, o clJ o 'o', t ', C),' @ ', o, 1, o ~ i ~ ~. t ~ rl t ot ~ t ~ O ~ O, ¢ O v (G uNK) r O oo O ; oooooo} oo Z to 0 0 0 0 XD XD iKD 0 KD a) 1, O 1, O, .1 O 1, CoD, l X,, @ 'O l, O o rl cro ai o S 4 X tõt - @ -lo M o o 101 ooo ol oo > ~ Fn1 x co m1 - Ir ~ '° I', 1 ° | °, @, @ ', 1 @', oo rH ~ I ~ t I rQ rt ~ ~ III ~ HMt o ot OX (W tz (B) St r OO o lol oooooo At 1C9 1 E ~ CN t, trNl At ~ t, zt o ~ t O n IO At O ~ @ 0) ~ (a) H | rt O rQ O t t1 CI UI east ol Ct XXMXX [4th tlOut rd I O1 ttl er trt vor in1 1 1 1 llll | l rt I n I rN N 1 tN tNt CS At ot CI rH I ~ s rQ ~ l ~ 4 ~ s ~ s ~ l E. : 't1 1 Table E12 Sample No. / Rating Overall rating of the image rating of the quality durability Evaluation standard:: excellent-: good net.

Table E13 Sample No. 1301E 1302E 1303E 1304E 1305E 1306E 1307E Si: C target 9: 1 6.5: 3.5 4: 6 2: 8 1: 9 0.5: 9.5 0.2: 9.8 (Area ratio) Si: C 9.7: 0.3 8.8: 1.2 7.3: 2.7 4.8: 5.2 3: 7 2: 8 0.8: 9.2 (Salary ratio) Evaluation of the image X quality : very good: good: for practical use #: generation of image defects use sufficient table E14 Sample No. 1401E 1402E 1403E 1404E 1405E 1406E 1407E 1408E SiH4: C2H4 9: 1 6: 4 4: 6 2: 8 1: 9 0.5: 9.5 0.35: 9.65 0.2: 9.8 (Flow rate relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Assessment of the image X quality : very good: good: for practical use X: generation of image defects use sufficient table E15 Sample No. 1501E 1502E 1503E 1504E 1505E 1506E 1507E 1508E SiH4: SiF4C2H4 5: 4: 1 3: 3.5: 3.5 2: 2: 6 1: 1: 8 0.6: 0.4: 9 0.2: 0.3: 9.5 0.2: 0, 15: 9.65 0.1: 0.1: 9.8 (Through-speed employment relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Evaluation of the Image quality X very good good for the practical use of X generation of image defects sufficient table E16 Amorphous layer thickness Sample No. (II) (µm) Results 1601E 0.001 Tendency to generate artifacts 1602E 0.02 no artifacts during 20,000 repetitions 1603E 0.05 stable for 50,000 or more repetitions 1604E 1 stable for 200,000 or more repetitions Table F1 s = ~ Xu ° E rs | | o | õ. s ¢ 3-v ~. tn o U3C used flow-flow-rate-discharge-layer-layer structure of gases E U -r iakeit (W / cm n - eschwin. ct carnE aJ a, Layer Si} [4 / He = 0.05 SiH4 + Ge! 14 GeH 4 E3Q) 3,000 - -o NO / (GeH4 + SiH4) = 3 / l00 0, lB 2 fi NO C o 0.5 -r C mm 2 Layer Si !! 4 / He = 0 Q SiH4 + GeH4 eii4 / i4 = 3 / l600 õ li o 8 C rc O h .O Alk m 5 H II (I] II 2 ts third 1.5 ri SiH4 / He = 0.5 Sill = 200 Ic cr cn a, v, .. ca, \ c D oo tv 1.0 as (11) SiH4 / He = 0'5 cD = 100 SiH z U 3 Z C3 CI) I a Qlm oo -ta E @ tD oo HH fi u U tO to W 3-F 1 ~ + + 11 ll uu X hE z :: o - o - -D ) JU] m O '<-h sn, | to. <, J DZE tn 11 en 11 en tLn a mxs, en tn sn tn oooo 'n WOOOOOO tv o tv s - tv tv @ \ \ \ \ \ vv 2 w. OX: n en U: l U SWSWS ~ OU 4 U fi UH v H - / - d 4JF lh U 3 50 h U ^ V - = D Sm sm aW ss U t ohz 3 c =) D (tsiw Q tu Table F2 rY I C. UQ) -cl L ^ COE rn mo Shift InJJ U1 In 1S) build-up gases speed ratio formation thickness 5: t, A, OE U 4 «^ VHC iakeit gv if CA <a rn c, E a, ai r (To tn U ~ H ~ C1 C -rl \ '4 r CDW 3 OOO X GeH4 / He = 0.05 = 50 NO / (GeH4 + SiH4) = 3/100 d 0.5 oo oo Second r (SiH4 / He = 0.05 SiH4 + GeH4 GeH4 / SiH4 = 4 / 100'0 C er e 3 c, 2 II o 0 ^ 0 O: IC rc e rc t, A. S 0.18 3 ar k rl II V) II Q> v + sr SiH layer = 200 Third 5 4 0.18 H. t1 ~ IU) WU] sw \ O \ h 0 X \ X : 9 <o O o I s et sr el ts: x: xo D, wC fi E eV O z ° l UUX h C tn sox W t @ ot) H 4. , | D tw HZEO 11 11 X c] o5r- - m, n tn n oooo, n G) OOOOO AXXX \ w 3W @ t4 WHERE AW X w ta v] O zv] O u) ,:> OID 4 SuH .W SH 4 SH s: 1 n S 3 3 U u wAa dn u: (I) 14DF4DS aqdJow Table F3 ub, ri XA L: UE rc ci U r (= i r: used flow rate, flow rate, C layer-layer U30) v) strength ratio in X \ 'n thickness - aux \ , ccrrßoE oo U c ((U r (r: vi A ta - O Layer 5lH4 / He = 0.05 oE en J. ~ ~ ~ -rHw3 O NO / (GeH4 + SiH4) = 3/100 0.181 oo NO u layer \ \ 3 c, c 'II o p 44 u 0.5 rns: S ~ v O hv H v r ev 11 e; n ll 7 rn o Z n tn x sr X eQ SiH4 / He = 0.5 SiH4 = 200 0.18 rs W, en t "V tn 1.5 UX tJ mr vmx \ x \ .F tV OW at tvp z tv) l \ vv ts I tr} I: X o D c E w, xV ° Hv u OO tlN lu 3 ^ l + + ll SZ w E vv sr UUX h CX o X o = 24 tn 05 0 H, 4 ur., Ur -, { 2 tD HZE tn 11 tn 11 n ao X ~ S In tn tn o ooo ~ tn X oo ll o - nC3, zV 1 J °, t V v en en tJ z tn O v) v Q v O su vv su v su JJ H, 1.4 V, / tn sw S d S , h U 3 U h U S: 5 X rn N tn a tn u ta ~ n u D (S @MdJouv tn AO Table F4 s oa, o -ri Y1 4 COE ooo IvlC. CC3r (- t4 fa U x eschwin tn S tn oor min '9 r (t: tn A ta - O First Layer SiH4 / He = 0.05 SiH4 + GeH4 GeH4 / SiH4 = 15 / 100'1 / 10 0.1.8 oo co H GeH4 / He = 0.05 w3 NO / (GeH4 + Si OOO so I second c- -ci SiI4 / He = 0.05 Si4 + GeH4 GdH4 / SiH4 = l / 100% 0 0.18 o 0.6 3 »o lí o so H'O O: IF ol c ( wh ~ I third O layer SiH4 / He = 0.5 SiH4 = 200 w 11 1.5 20 3 v) E. 9 x pl W4, tn AV tn SW \ O \ tJ XX s X 1: 5 H tD O s arzz; D I s sr tr tS l to xo 2 CE tv wo H ti fi u tO ts to u 3-el l + + ll UUX Ld C x <A ov OX D tD FZE tn 11 tn 11 tn a or tn ur tn tn oooo 'n vooooo OAQ w1 Q MJ \ ta. w O: n O x 4 W fi SW î ~ AV S WU fi U »U DH e $ F l en s Q, c -ds s 2 X tn tS en a en U n J. u D (I) lM3FM3S aqdlow tn tt Table F5 I 'I OQ, N CO 1 = OE O 0 LO C used flow rate - flow rate - C layer - layer U 2 S tD gases speed ratio in formation thickness rlaOe \ cn iakeit tn .nm -. O mcrE a, ao r (SiH / He = 0.05 SiH4 + GeH4 GeH4 / SiH4 = l / l "l4 / l00 0.18 r (r ( fi cd * X - ar (- ~ I oo oo Ico o C ri 2 s layer SiH4 / He = 0.05 SiH e SiH <r) 0.18 O 0.8 Ccl 2 ri U: C c ( t: layer SiH4 / He = 0.5 SiH4 i -l fi .3: xt: = W rn O rn S t <\ ar to z I s sr mr D av ~ wn ~? oooou) ooo ll o @ li 11 11 @ 11 ta \ s - \ @ @ x - v - ¢ - £ 3 O d @ o HJH 6 sn tn t,) z en t, 2 en @ s S @ S (DS @ u 4 u 4 u V d, 1 -1 VH l en s @ s -ds S 2 Sh tn q tn a tU u ta, -F n J z (S aqdJot tn, a Table F6 Ir C. OQ) rlXI CoE N \ oo O rl cna- I-1 Layer used flow rate flow rate c 3-d ~ v vv U: t ~ t rn oo build-up gases speed ratio formation thickness S ~ tn tt E U --I ID (W / cm C eschwin (m) iakeit oX 1 cc. I 1 u arE aD a3 Layer SiH4 / He = 0.05 dz ur o rc r ( = 50 5/1000 0.8 0.5 2 O oo Irn rl c> C - oo r (C o rc o 3 i, 0 II 0 Layer SjH4 / He = 0.05: tt, ~ tn s \ gn x ul IV h (81 sr -H v a, ki J -c (9 GeH4 / He = O, O5 = 50 : tn X sr X = Iv, e third c: 51H4 / He = 0.5 @ a.10 ur 9 V kO, s DH ev o ev a xs O zr,) I s or v ts l to 5: o 2 CE sV tV O ~ 4 FVU t,: 7 t.) TN W 3--1 1 ~ + + ll SS eJ E sr s sr UU PY h C ~ o XOX ;, tn oo O -4., In., {uX --4 :: o -4 z £ en 11 tn 11 tn a ox ~ 0 tn tn tn VOO o O t 3 @ == o fo s @ s ev s as u 4 fi 4) e 4 pl n SXS f4 S V h U 3 U Lt U s 2 X «; nsna ts d R ~ u D (I) l43F43S aqdJoE n Table F7 u tD c UE vvo U rl ~ 1 ~ { tn r ~ W c W t rt V SC? F ~ U used flow-flow velocity discharge layer layer build-up gases speed ratio formation thickness digkeit 3 achievementna eschwin oo. U rX tn, 4 cna-, .-, Co First «) tZ 0 rd en fi EE H r ~ ~ 1 ~ tn tn u ~ * ~ D SiH4 / He = 0.05 5iH4 + GeH4 0eH4 / SiH4 = 1/10% 0.18,000 z ° 3 45/1000 o- o NO o (GeH4 + SiH4) \ õ c ot o ~ o 3 c õ -l ll o z -l \ v Ps U layer 4 / He = 0105 SiH4 + GeH 0.18 0.5 0 n X z I} tS 11 OW v + v z en, 4 S rX H; Shift en 5 tn 4 = 200 0 U wY tO I \ er v C lx = xo Dc EXQ o <H vu tO tO tlN W 3-9 + + ll cso E xov ~ t 4 th m O v ~ s rt an Pt r D o 9 ZE 11 ts 11 ts Cl m 1 r ~ S ur ur tn o ooo W ur X - os O 1: = XX o r \ \ XX C vtvvv 3 o -§ @ o H @ wH z tn ts 27 z en Xs tn o fa Pc OCO < QU 4Y U YY U 4XH * v l tn <Q c -r4, C fi hU 3 U 4 U c UX «n tS a uz ue H n uz (I) l S aMtilOt n 4 Table F8 Layer - used flow rate - flow rate - discharge layer - layer build-up gases speed ratio formation thickness digkeit o Leistna, eschwin or (Norm-cm / (W / cm) iakeit min) (nm / s) First cr 5i2H6 / J [e = 0.05 Si2H6 + GeI! 4 Ge! 4 / Si2H6 = 4/10% 0.18 0.5 2 3/100 GeH4 / He = 0.05 = 50 NO / (GeH4 + Si: 2H6) = 3/100 NO 0 11 o 3c, 5i2H6 + GeH4 GeH4 / Si2H6 = 3/1000 0.18 0.5 8 U) layer 0 Mm = 50 QA third w N Si2H6 / He = 0.5 5i2H6 = 200 0.18 1.5 10 Table F9 oa, ccX cu 03 o H, Y ~ cna- 6th IV111: rJ tc + J 5- C OD 5 '@ flow rate flow rate X 0 S layer structure gases v z 6 U) UEO or similar digkeit 3 achievementna eschwin c viA.ta-. (, / cm ~ iakeit II = no cnlncE co as II> qS U1 v E co co ~ tD U] Ú e HH Layer to SiF4 + GeH4 GeH4 / SiF4--4 / l0% 3 / lOO C Ho v 2 r: 3a) 3, O oo X t <~ r v Second m layer SiF44Ie = 0.05 SiF4 + CeH4 GeH4 / SiF = 3/1000 0.18 0.5 8 u 0) GeH4 / He = 0.05 = 50 third m layer SiF4 / Ije = 0.5 SiF4 = 200 0.18 1.5 10 to OZO Is V CI m ~: Z: o DCEOX or similar ~ HUU z CN W 3 9 1 ~ + + 11 5 ~ 5- 0 E mr vt UCLOM o N zn DOH o 9 UN, 4 UZE m 11 m 11 G 12n ~ tn S ur ln oooo UN @ o O ooo mr vvvv OX ~ X ~ M 3t mz ZO mzm > s <0 5 0 5- OU fi UVU VH, 4 ~ {V I u) 5- QSS DLU 3 U 4 U = 2 mm sm am qn uz (D <DS aqdJousY Table F10 Ir 1 C. among others, rl L c CU N cr, o U vm H v tn In Ln Iinc Shift- OO r build-up gases speed ratio formation thickness C-crnE age 3 C , çn; ms ~,,. ----- C ^ II no -1 rn U cr L) SiH4 / He = 0.05 SiH4 + SiF4 GeH4 / (SiH4 + SiF4) CC (2 2n ~ 3 + GeH4 = 50 = 4/10% 3/100 0.18 OO | NO / (GeH4 + S iH4 sir CHN r (A 3c, 9 rn II-I C + U: s., 4 4 8 cn SiH4 /! le = 0.05 SiH + SiF v O v + GeH4 + + 0rl + C? a> O 3 v, r (OS c (c, 1ß mf: V1 c> & VV) tq C1 Third S'HHe = 0 5- o X 14 o 5 SiH4 + SiF4 0.18 10 UX v ~ v ~ Lc mr 1.5 ar O 11 Z 11 (O 11 IX vvv CI n N o N o N 2: IT <P. <HVUU] 11 U) 11 o 5C 5: 0 E vvv U UR v C = O = QO ; m O m ~ OHOHU) 2 CFZE m + m + m 11 amoa- ~ just oooooo 2 p JO osoo O oo O 11 11 11 11 11 11 11 11 to QOXQ @ Q o 3 O vvtvvvvv XU, 4 OHH o .e H. > see below) Z t uz (n V $ V 5C o S as, C OU v UVU jJ H, 4, ¢ 4 9 l u7 5C X 5C HC V h U 3 U h U 5C 2 SM DM On 5 u (I) lqDwqDS aMdJourV Table F11 Layer used flow rate flow rate discharge stratification structure gases speed ratio power speed speed (W / cm²) (nm / s) (Standard cm³ / min) Third 1.5 SiH4 / He = 0.5 SiH4 = 200 B2H6 / SiH4 = 4x10-4 0.18 layer B2H6 / He = 10-3 Table F11A Sample No. 1101F 1102F 1103F 1104F 1105F 1106F 1107F 1108F 1109F 1110F First Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Shift 164 165 166 167 168 169 170 171 172 173 Layer thickness the third 10 10 15 20 20 10 10 10 10 10 Layer (µm) valuation : excellent: good Table F 12 Stratified Flow Rate Used Discharge Stratification structure gases speed ratio power speed speed (W / cm²) (nm / s) (Standard cm³ / min) Third 1.5 SiH4 / He = 0.5 SiH4 = 200 PH3 / SiH = 2x10-5 0.18 layer PH3 / He = 10-3 Table F 12A Sample No. 1201F 1202F 1203F 1204F 1205F 1206F 1207F 1208F 1209F 1210F First Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Shift 164 165 166 167 168 169 170 171 172 173 Layer thickness the third 10 10 15 20 20 10 10 10 10 10 Layer (µm) valuation : excellent: good Table F13 .yc cu c yr SUE tN eN right Layer uses flow rate t) flow rate discharge In Ln I build-up gases speed ratio power formation thickness Value (Non (W / cm2) 1gSifl () cm / min l First Layer SiH4 /! E = 0.05 DN ~ ~ H fi O 3 O oo NO / SiH4 = 4 / 10'2 / 100 NO u oc ( 3 SiH4 / He = 0.5 SiH4 = 200 NO / SiH4 = 2/1000 0.18 1.5 2 NO third Layer to SiH4 = 200 0.18 1.5 15 S ~ xoo S 3 = rh = xov O o Ov no ^ 3 -1v0v0 U \] ZO S OS Oz OU 4J UVU 4JF., - V d l uxS ass 95: 4J) U 3 U) «U S R1 w u D (I) Xt {D4NDS aqdJouw Table F14 I. cr ---- Used flow rate flow rate discharge layer layer build-up gases speed ratio power formation thickness Value (Nonr (W / cm2) qeschwin- c, cm / min) speed man First 50 2 C ~ SiH4 + GeH4 GeH4 / 5iH4 = 3/10% 0 0.18, 1 X0 D <Ne Õ o õ NO ci o Second 2 Si! I / He = 0.5 SiH = 200 NO / SiH4 = 5/100% 0 0.18 1.5 1 4 4 NO U third 0 layer II '° 4 / He = 0.5 X 3 X eo NO UZ rn OO 0 rn a) oooo V lí lí í l 3 @: ~ <r ~ v Pn 'aJ O o, * :> OU] OZ} z Z v] S @ S aJ S XU 4J U 4 U l U} S @ S --4 S vv U 3 U z U s: X cn> u) a cn FUQ v] te (I) 44DvqDS aqdJoqr Table F15 Used flow rate flow rate discharge layer condition gases speed ratio or area per- formance thickness speed (standard ratio (W / cm²) (µm) cm³ / min) 12-1F Ar 200 Si disk: graphite = 1.5: 8.5 0.3 0.5 12-2F Ar 200 Si disk: graphite = 0.5: 9.5 0.3 0.3 13-3F Ar 200 Si disk: graphite = 6: 4 0.3 1.0 12-4F SiH4 / He = 1 SiH4 = 15 SiH4: C2H4 = 0.4: 9.6 0.18 0.3 C2H4 12-5F SiH4 / He = 0.5 SiH4 = 100 SiH4: C2H4 = 5: 5 0.18 1.5 C2H4 12-6F SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 1.5: 1.5: 7 0.18 0.5 SiF4 / He = 0.5 = 150 C2H4 12-7F SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 0.3: 0.1: 9.6 0.18 0.3 SiF4 / He = 0.5 = 15 C2H4 12-8F SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 3: 3: 4 0.18 1.5 SiF4 / He = 0.5 = 150 C2H4 Table F15A Ic 1 Her:, te1lri6'sbedin- 101 of ON § sample no. O evaluation Layer (11) <12-301F - 12-SOlE l2-601F 12-701F 12-801F l2-901F l2-lOOlF X "XOX CL O 0 0 0 0 0 0 0 0 0 0 0 0 - 2 s C -402K 12-502K 12- ol o -702K 12-802K 12-902 rr a en l O t O tl 0 0 4 0 0 0 0 0 0 0 0 0 0 NONONON rl 3 1 - ((IL 3 14 - CL Li CL IL EL (CL Ot O r (l to O tot (B), 4, (-), o - -304 ~ ~ K 12-504F ~ - ~ 2-704F 12-804 H 4 2- Qo, O tt O rf O Õ @ rr to JO O rs> r 5 2- r 12-6 2-705 l805 rs OS r 12-5K Co, @ (@ ol 6 @ l (eß l N Qo @, O lo oo @ @ @ 31L1 12-306K C4 12-506K 61. 12-706K 12-806K If 2-1006K 12-6K coi O @ @ Qo; zuCo, @ t @) Co Oo Qo Co; cc O oocoo (coc iUIO \ 0 vD 12-507K <12-707K 12-807K ~ \ 01 7K 12-1007 rD c (° ot OAO 0 0 0 0 0 0 0 0 0 0 cl 0 C "C" cc o C41 G; rF Cr M o Nt 8F ao M16 rk 12-408K O 12-508K 12-608K 12-708K 12-808K 12-908K 2-1008K . ooco C ol oo 0 OC Oj O (COC 6 r, ll In In O 0 0 0 i I ß (i yr 0 0 rXD ~ ~ e -4-1 -ft -4 ~ oo O o OF ovv F r O; u O srol O ts O <; 3i gN | «| 6 i 0 NO ~ O m1 0 8 oa (Q) Ll t92 krowo o ol ol ol ol ol o ol ot (n fs o. m1 t1 rs - so1 1 'o 4 o ,, 41 o (OJ ,,,' 1 <,.} o tN o 19 -1 o1 -I 91 91 H -11 WH ° 18 ° WHW 'x ° F ttNt ~ XL t ~ | ~ N «rat fo 4 o 14 o 4 $ v) s X «| % °} NE mW 161 - r o1 -'I ~ ~ el 2 Eri nl I BNIXXXXXMI HNI nv rN xD> «3 X :: z IN CS INN (NN XN N hgz 1 HIHH ~ H < I. Sample No. / Rating Overall rating of the image rating of the quality durability Evaluation standard:: excellent-: good net Table F16 Sample No. 1601F 1602F 1603F 1604F 1605F 1606F 1607F Si: C target 9: 1 6.5: 3.5 4: 6 2: 8 1: 9 0.5: 9.5 0.2: 9.8 (Area ratio) Si: C 9.7: 0.3 8.8: 1.2 7.3: 2.7 4.8: 5.2 3: 7 2: 8 0.8: 9.2 (Salary ratio) Evaluation of the image X quality : very good: good: for practical use X: generation of image defects use sufficient table F17 Sample No. 1701F 1702F 1703F 1704F 1705F 1706F 1707F 1708F SiH4: C2H4 9: 1 6: 4 4: 6 2: 8 1: 9 0.5: 9.5 0.35: 9.65 0.2: 9.8 (Flow rate relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Assessment of the image quality X : very good: good: for practical use X: generation of image defects use sufficient table F18 Sample No. 1801F 1802F 1803F 1804F 1805F 1806F 1807F 1808F SiH4: SiF4: C2H4 5: 4: 1 3: 3.5: 3.5 2: 2: 6 1: 1: 8 0.6: 0.4: 9 0.2: 0.3: 9.5 0.2: 0, 15: 9.65 0.1: 0.1: 9.8 (Flow rate employment relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Evaluation of the X picture quality very good good for the practical use of X generation of image defects sufficient table F19 Amorphous layer thickness Sample No. (II) (µm) Results 1901F 0.001 Tendency to generate artifacts 1902F 0.02 no artifacts during 20,000 repetitions 1903F 0.05 stable for 50,000 or more repetitions 1904F 1 stable for 200,000 or more repetitions Table G1 1 c, ua, u, r (X ^ QI 0 + J used flow- flow rate- discharge- layer- c, In In o build-up gases -rlauu \ lo C - 4 U) ty E. U -c (qr (r: min) (nm / s) O First I layer SiH4 / He = 0.05 SiH4 + GeH4 GeH4 / SiH4 = 4/10% 0 in0.18 0.5 1 carnE cl cl t rß U 4 fi Ce oo 2 !! 6 / (GeI4 + SiH4) = ca3 3xl03 0 B Ii e- 26th NO NO / (Ge} 14 + Si H4) = 3/100 o II C o 3c, 2 rn 0 layer SiH / He = 0.5 SiH = 200 0.18 1.5 A U: 1t 4 rn c O) Lc r + -c ( 0 1 s vi c, + cu u (11) Si! 4 / fe = 0.5 SiH 4 = 100 Si! I4 S 2 H mr C3 = uu i V) -m Q) c ii Ur OOY a XC = rl z I \ v CI rn SOO 2 CE a) oo , -4--4 JJ UC rJ, -4 W 3 4 1 ^ + ll ll fC C aJ ES s S ~ LO ~ 4, en, 4, 2 4 Z £ tn gl cn ez ur OOI UN In @ OO, -4 OO JJ ll ll 11 11 §1 X a) oa; t) o ca) z H av u JJ u 4 S 2 husr: S -4 R. J h, 4 do DOC . (I) l4DF4DS atldl ° And,% u Table G2 U9E- N 104 among others, rcX- NA CUE cr U r ( rna- U z C o tt] Z Layer- uses flow- rate of flow 'Entla- layer- layer n E build-up of gas speed ratio dark formation 'C ity ~ performance speed (im) O' C. D. II + N 03 rrJcnnE c ( tr IU 5 V o SiH4 / He = 0.05 SiH4 + GeH4 GeH4 / SiH4 = 1/100 0.18 C 4 OO r7a3 rO 4 ~ Wprl- u a cr c Ir -cr o A 3 rn 2 II C r (0 c C} SiH4 / He = 0.5 SiH O D o U mt-X ° llm ~ t O h CJE O -4., U) n mU ~ ~ ur OOIU) OOO, O fi | ll OO @ @ @ @ vvo tr 3 @ S :: ~ hu), 4 0 oJ O wr4 > O u] O mz ul s @ z @ u W u l XC ZD, C V h U 3 U tC 2 X cn cs cn O e e4 wa CW uz r (I) ll4DwMDS aqdJourV Table G3 among others, s: UE used flow rate flow rate N shift In <na- ll ~ IU) z V ¢, 4 W SC 3 .4 ~ (.) DSO 0 S 0 First Q) rn In Ln Layer o E o 0 r (Q, -c (C u Geil ° 't = 50 u II = FI arnE: a3 - (cn O rl Second 5i114 = 200 0.18 1.5 15 W3rl- O OO OO I U1 ~, -4 o4 L> 1 ^ t-4 3 vp U: rG 9 U} SXU] O hv + r X 11 v tl] C> sr ~ + W, 4 U) w U ~ sv tD O ~ -, 4 OJ NXO a ç U C1, «z I s mr ^ I n ~ o DCE to , 4 WVU z 31 3 -4 j ~ + 1t ~ s OE sr sr U UX z C ~ o ~ h U] O --4 -, 4 u) ffir4 n O --4 ZE m 11 m a mU ~ ur oo I ur aJ ~ ov VOO, -4 O G) 11 11 ìl 11 UX g QO 3 tJ s 0 v h U1 n ~ 4, U <(DNO Sr4 :> u uz umz ur 4Y 4Y s Q s @ u W u fi -, 4, 4, 4 UX ¢ OwC h U 3 U V [Ci , U4 Q SW u D (I) ltlDRDS a {dlouV Table G4 Ic, oQ, oU E In -4 X ca- III I + r V) t: C tr \ - l L) IC In cn C a UC \ 0 r (cn o, EO ra S -4 U) OEO C. IU \ I 03 rdrnrnEi ri c ( NS L) C r (CO r: aS Lla c I. F o c aoc ( E: II , 4 O ~ N r (used flow rate flow rate ntla- sheet layer S -, 4 gases speed ratio formation thickness UC t4 v U) ci rn VU) 0D, -4, -4 + --4 II sy) min z '-s = + 3k 3 = cU First Sii1 / lIe = 0.05 SiH4 + Gei! 4 Gell4 / SiH4 = 15/1000 0.5 cn -ma, C GeH4 / He = 0.05 In B2H6 / (Gell4 +5 ill4) 0.18 U Uc, Do - A-,: t -3 z Q) Q) cJ XO OX C3 mme I NO / mr Q (mt: o ' 3C 5iil4 / ile = 0.5 5i1l4 = 200 'EU o , «Shift W 3-r4 1 ~ + 11 Ú UX v C o ~ h U] r O t4 -, 4 u- \ ~ 4 2 0 o4 ZE m 11 W a crz U ~ ur oo I ur VOO, -4 O aJ OQO 3 O vvsv :> O tn umz cn vv s @ z O u fi u S zh U 3 U C W4 u DI) ltlDwqDS aqdJouw Table G5 r: uE build-up gases speed ratio formation thickness II power speed (m) V, 4 V cr min) (nm / s) u: rs @ uX nn First aur / Hc = 0.05 x + GeH4 GeH 4 / SiH4 = 1/1% 5/100 C rn OE oc U -r QI -r (C: uz a O II 3V cdrncrE a, r (tn U c < 4th VC -o4 s - Width 03 oo S -, ~. O O o I ul o H C, 4 -4 11 \ t4 CX tol 3 v tn mr 11 U Cft ~, 1 v O s \ tn x tD a) 11 vu] s tn: W4 -HU] O sau \ \ IU UA: v \ 0 0 D -, 1 QNXO a- u sn z I \ sr e | n ~ o :: CEOO , 4 fi UUN u> - l ^ + ll UUX h C - O ~ t hnm 0 t4 --4 tn, 1 5 o - 4 ZEU) li U] a Cy n tn rn oo I tn O ~ voo O QJ O l C ~ ~ rr 3 0, ON zO: z: SOS QJ U fi U 4, 4, 4 U] SOC V wh U 3 1) S tW u 2 (I) 4RDADS a4dz Table G6 I. oa, u, i, q CUE rn rnO- I 1 Imt: CC3-r, UC (U v] In cr aur \ c C cn E o 0 r (a, -rl c A aa- C) r C. = 1LI II c 03 m amvrE c ( cclU Layer Flow rate used Flow rate Õ 9 11 UC gases speed ratio, formation thickness ei-s5ung cn (m) (W / cm v ity min = Q) First> / He = 0.05 Si} I4 + GeH4 -no \\ I 4 44 0.5 UW v vo O H6 / (GeH4 + SiH4) = 0.18 1 a C3 H / He = l03 «x zo 26th NO I m .o 3C SiH / He = 0.5 SiH4 = 200 o Layer 4 0.18 1 15 n tn n oo I ~ tn n MÒX> Z 2 I. SQS @, Ux w U u}, CQ e.g. z xu] 30) c; 4 at e I) 48: ytMaS avidlourV Table G7 I. oa, CUE U r (flow rate flow rate U uE r-n4 build-up gases speed ratio formation thickness III I ux C 4 4 4 C3r (- U n S) us tn tn cccnOE o 5t-4 u] UEO U-, i SiH4 / He = 0, OS dJ-, 4 GeIf4 / SiH4 = 1/10% 0 -ri uz n mro ~ v) = 50 B2H6 / (GeH4 + SiH4) = 0.18 1 O. II: N UE ao al NO tJ (tl t), r-4 rc ui U ci Second 0.18 1.5 OO XX ~ 4 . . ~ ~ IO, 4 C-, 4 1l \ t4 C ° N 3 J- \ 8 S c4 O ~ U:, 4: 9, 1 t U} SXU) 1: 8 @ 11 v X el> v SC + DX ~ @ v , 4 4J UX t; 4 -, 4 m Q UX v vD O z, 4 @ NXO ara z al z I sv <| m ~ o , 4, C4 fi £ u O o u 3, 4 1 ~ + ll UUX LJ C-, tn ~ t tn tn m oo I tn OX ~ OO cJ oa; @ W z QZW WW s @ C OU fi U 4, 4 d ua sa) c lsu 3 u <z. rw uz cq u) , 4 Q , CW u W (I)) DS aq Table G8 Ir -c (Cu: c COE cc .. ll II IcnC cr t3i- cl iUC Q, u, In aur \ C r (rn O, EO U c (cU c (C V] 4 tra- t3 ' 3A II chl ma, auicnE cr tr r U co C30) 3 1 o a: o rl ae CO (V 3 rß o 2 A -r4 ~ 4 q vD structure gases r4 = 0 6 4) ~ 4 1l + r4 on: at ez S: z: ~ + ci C f min (D (nm / s) First 5i2H6 / He = 0'05> GeH4 / 5i2H6 = 4/10% 0 0.5 oL1 to V B2H6 / (GeH4 + 5i2H6) = 0.18 0 k-rl 3 Q) a, NXO Q ç OQ x Z «/ Ie = l03 3x10 z 1 ns (GeH4 + Si2H6) = 2/100 cr, QI .o 3r: r4 V 1.5 19 c (ri L) U + II u 5i2H6 / He = 0.5 Si2! i6 = 200 h ¢ O -r4 r tn r tn @ o @ ° o Õ - @ NO r 4 V rz @, C QU 4 U J -r4 .r4 er4 U), C ZD J h U 3 U SD Mm sm U e st » en r I)) S a4dlouR Table G9 lA ~ r-4 etc. 3 rna- II 4Y Ln Lii u 0 C ~ rna 1 rt u co r «5 U) U rH r- l v, 3 oo O O c, tn H c H II N o1 C & v 2 zz II to the o UU r-4 ri NCX cn Q);, v + 11 9 cn Erl> + 3 (n W vi 4J, 4 O ~ W ox U , CON 1 UX v zD O z: 1: DHXNX CD zmz w 0 w 0 CD cu rz + II N To Lii II n Lfl Ln oo I o O 0 0 0 O 0 0 II II II II X a) w c N = a, 0 3 Q) Cm 3: OU, 4 QNO > CD CD U mmz cn cr c, tSu tSu V o1 r4 r4 c, asc C3 and Urd Wcß Nos c (a Clu mr (I) AMDwMoS aqdlouw Table G10 I. cl c among others, . * ~~ crY build-up of gases speed ratio power formation thickness u Q & t (W / cm2) speed E o U, train 75 N a3 00 e V ~, «,« 4 SiH4 / He = 0.05 SiH4 + SiF4 GeH4 / (SiH4 + SiF4) = V)>) ~ O0.5 ffi oq 3 sr C4 ~ I cn OS B2H v (GeH4 + SiH4 +5 iF4) I uz 11 en M 9 rn BH N ~ + 2 6 / He = 10 U: r6 V] V1 NO t + + c ( (vv U] tTa, c + i 0> = 1/100 cn n U m rcu O II (1) 0 ier - c \ \ o C o S ar Second 0.5 UY 5 rE X \ X UX SiH4 /! Ie = 0.5 SiH4 ç XN m O ~ ar NmO C3 om II zs mb vs, ot ur tn ur x ooo I ur n s o C) oo, oo U 11 11 li 11 11 íl aJ @ oo av cJ c C \ XX O vv xr @ s z U1 r4 r4 aJ nJ O .- XU uz mz uz uz > V vvc 3 s ue r4 S ú (I) 443 S aydlourV cn e Table G11 II cl c Layer tn flow rate flow rate discharge S layer build-up gases O speed ratio power formation thickness U »8orOU 1 cm / min Cn 0s First Shift o 0 o rl C ol 3 O B 11 \ u 26 NO NO / (GeH4 + Si CO mm s CO ~, 1, 'O U: around 9 cn \ v, x t SiH4 / He = 0.5 SiH4 = 200 W1 1.5 m Oi Q) li a rn 1 ci 9 C + B 2H6 r (B2 e1 W-, 4 uz na) tr St s \ IO \ UX rO ~ s ano O mzm iS = ~ QN ~ un m oo I ur I AJ OO r ° QJ OO 11 lí Cl T ~ * > mt z Tsr ~ xD QU w U C j. @ R 3 ú U e X uz eq Xq 4Q (ne (I) RtlDFqDS aMdJourV Table G12 Sample No. 1201G 1202G 1203G 1204G 1205G 1206G 1207G 1208G B2H6 / (SiH4 + GeH4) (Flow rate 1x10-2 5x10-3 2x10-3 1x10-3 8x10-4 5x10-4 3x10-4 1x10-4 indulgence ratio) B content (Atomic ppm) 1x104 6x10³ 2.5x10³ 1x10³ 800 500 300 100 valuation : excellent: good Table G13 Layer used flow rate flow rate discharge layer formation structure gases speed ratio power output speed speed (W / cm²) speed (Standard cm³ / min) (nm / s) Second SiH4 / He = 0.5 SiH = 200 1.5 Layer 0.18 B2H6 / He = 10-3 B2H6 / SiH4 = 8x10-5 Table G13A Sample No. 1301G 1302G 1303G 1304G 1305G 1306G 1307G 1308G 1309G 1310G Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. First layer 184 185 186 187 188 189 190 191 192 193 Layer thickness The second 10 10 20 15 20 15 10 10 10 10 Layer (µm) valuation : excellent: good Table G14 Layer used flow rate flow rate discharge layer formation structure gases speed ratio power output speed speed (W / cm²) speed (Standard cm³ / min) (nm / s) Second SiH4 / He = 0.5 SiH4 = 200 1.5 Layer 0.18 PH3 / He = 10-3 PH3 / SiH4 = 1x10-5 Table G14A Sample No. 1401G 1402G 1403G 1404G 1405G 1406G 1407G 1408G 1409G 1410G Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. First layer 184 185 186 187 188 189 190 191 192 193 Layer thickness The second 10 10 20 15 20 15 10 10 10 10 Layer (µm) valuation : excellent: good Table G15 Used flow rate flow rate discharge layer condition gases speed ratio or area per- formance thickness speed (standard ratio (W / cm²) (µm) cm³ / min) 12-1G Ar 200 Si disk: graphite = 1.5: 8.5 0.3 0.5 12-2G Ar 200 Si disk: graphite = 0.5: 9.5 0.3 0.3 12-3G Ar 200 Si disk: graphite = 6: 4 0.3 1.0 12-4G SiH4 / He = 1 SiH4 = 15 SiH4: C2H4 = 0.4: 9.6 0.18 0.3 C2H4 12-5G SiH4 / He = 0.5 SiH4 = 100 SiH4: C2H4 = 5: 5 0.18 1.5 C2H4 12-6G SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 1.5: 1.5: 7 0.18 0.5 SiF4 / He = 0.5 = 150 C2H4 12-7G SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 0.3: 0.1: 9.6 0.18 0.3 SiF4 / He = 0.5 = 15 C2H4 12-8G SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 3: 3: 3 0.18 1.5 SiF4 / He = 0.5 = 150 C2H4 Table G15A õ O õ oa O t &) tn 1ç) t C) r OCO coo V o J, 0 (= C o "o OEO = OCO 0 rt CI rl 12-202G tuz 12-402G,> (Q) lol O 12-2G O 0 0 0 0 0 0 ~~, k O - N / O õ O: O o O riO 12-403G 12-503G 12-603G {U) tn 1t) o zu r O õ O 0 3 0 0 0 0 3 0 0 0 O 0 O 00 gm '<0> tol t ol rs O, - O o 'IIXI. I r r NONON, O cJ 'Oi NONO C: rl C3 3 5? C1 m NONO - OON «o O ol (04 NI O 0 O X t O | 00O UO vo txo) O, o) | o) zo I o 12-8G tr n, n In ol 0 In, y D ~ O, - O tE O, Nt fX, -t * ~), (0t ~ ONO GO | O Õ O tO ti O s) t 1409 Õ O Cl O vvv or vv SI w AOFO tE O (Nk / \ 0) o ~ n {g Aq O q O ~ O z O c OU gz $ U -0s O t <~ fw zn tt m Irt C7 tE otoeo N AoS N ~ z fs) N om! O CO o O Õ O o (J Õ * 'oi O (j O Õ c1 0 cs. NN 1t NN - 1 csl , O ~ O ~ O q (O) N 4, 9 (t HOA | O C9t D g HoF OOUOOOO OCz lllllll v> o, H -1 ~ -1 H -1 ~ Sample No. / Rating Overall rating of the image rating of the quality durability Assessment standard:: excellent-: good net Table G16 1601G 1602G 1603G 1604G 1605G 1605G 1606G 1607G Sample no. Si: C target 9: 1 6.5: 3.5 4: 6 2: 8 1: 9 0.5: 9.5 0.2: 9.8 (Area ratio) Si: C 9.7: 0.3 8.8: 1.2 7.3: 2.7 4.8: 5.2 3: 7 2: 8 0.8: 9.2 (Salary ratio) Evaluation of the X picture quality : very good: good: sufficient for practical use X: generation of image defects Table G17 1701G 1702G 1703G 1704G 1705G 1706G 1707G 1708G Sample no. SiH4: C2H4 9: 1 6: 4 4: 6 2: 8 1: 9 0.5: 9.5 0.35: 9.65 0.2: 9.8 (Flow rate employment relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Evaluation of the X picture quality : very good: good: sufficient for practical use X: generation of image defects, Table G18 1081G 1082G 1083G 1084G 1085G 1086G 1087G 1088G Sample no. SiH4: SiF4: C2H4 5: 4: 1 3: 3.5: 3.5 2: 2: 6 1: 1: 8 0.6: 0.4: 9 0.2: 0.3: 9.5 0.2: 0, 15: 9.65 0.1: 0.1: 9.8 (Flow rate employment relationship) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Evaluation of the X picture quality : very good: good: for practical use X: generation of image defects use sufficient table G19 Thickness of the Amorphous specimen No. Layer (II) results (pm) Propensity to generate 1901G 0.001 of artifacts no artifacts during 1902G 0.02 20,000 repetitions stable during 50,000 or 1903G 0.05 more reps stable for 200,000 or 1904G 1 more reps Table H1 Layer Flow rate used H Layer Layer coE gases speed ratio formation thickness tnaY ----- / (W / cm) diaity 4J b fi First t) as @ u} vvv GeH4 / He = 0.05 E B2i! 6 / (Ge! I4 + 5iH4) = o 0.5 1 u @ H c U -r (O) 3x10 1 Whether 7 r layer SiH4 / He = 0.5 4Z E 1.5 19 H To SiH4 = 100 SiH4: C2H4 o 3 o 7 018 10 C3 O3 u ss < @ vv + v t @ 11 mr ~ nz HO U UX v KD O: Z: DFXN x H a X C7 mm ~ uz lln -too DCEU oo u 3-H l + ll ll SSE xox er D zg X ll X m a mr ~ tnunn ool S- un @ oo <oo @ @ @ QQ nca ~ x ~ \ O s D tr s 3 a} x: = xx: h XH @ N .HHN :> O uz O m uz uz C) saz ~ X u JJ u H 4 H - H tD C 3C Qz U n ffi U <W (I) 4 SO e.g. u] <; 3qdJouw .E u Table H2 c O <u rcX - OE cu rn 0 r ( via- I 1 IVIC up- C a -ci - u, n 03C a, vi -r (aox o C c (tn E 0 c (Q) C 3 Flow rate, flow rate u, layer o e used build-up gases speed ratio formation thickness P) speed (itm) (Wjcm) speed min ') J: Q) IC for Z C3 N a oe ur ool ur o - - or voo H o O IS 11 11 11 cooox 3 0 vv xD v O <o rs oX :> O u] OQ u] w 4Y s O, e ou 4 u vw 0 so h U 3 U l X u] su] W. <as ue dn un (I) lM3FM3S uz 4 aqdlow | Table H3 . U »N cm ion via- l speed (W / cm c diakeit W oF W min) (nm / s) First m X vv He uR -ri a Sii! 4 / !! e = 0.05 ux \ o u 8 o C crtrnaE = 50 B2H6 / (Ge! I4 + SiH4) = 0.18 2 - width SiH 0.18 1.5 15 H m 0 u ò ò cn o3 X g H O O l 0 H CH \ 11 H <N 3 4 8 v = H os u: tc ~ H ul s \ u] O h: r + ro 'lv Q> 1 " D 0 r X H 4J HO WF U] s @ \ sl u X v vo o vrr DF @ N x t O m H lv elnso : 5 CE oo HF fi u O es W 3-H l + ll SS @ E vv UUX h CS o S z uX ¢ o H s ox D 0-HZEW 11 w a ms a) oo o t aJ @ oa) 3 ov tW v SOS ou 4 u 0 so lh U 3 U 4J [4 en b z 2 ue rl Q u 21 (I) ltDF4DS uz e aqdJourV Table H4 TI su Ê ~ r Or E In ' c (0 U II O \ - cl cc 5 -r (- In n U 3 1 O) rn 5 -rlrJ ox \ o c (cn IE u] a co- br C. X Fa H 1 I Uu oo crtcnlnE r ( 0 o -c (flow rate used- o layer- c 3 o sr 3vi o gases speed ratio dunqs formation thickness UE 1 fi un um > ta ~ + min v 9i 3k First SiH4 / He = 0105 5iH4 + GeH4 GeH4 / SiH4 = 15/1000 oz0.5 cw $ V) -n s layer GeH4 / He = 0.05 = 50 B2H6 / (GeH4 + Si 0.18 1 o +1 Q IDO h t1: r: ~ t1 P) to H4) = L3 X (3 mm width SiH4 / I! e = 0.5 SiI! 4 = 200 0.18 1.5 15. SZchicht HF fi u ON u 3 1 ~ + 11 su su x õ H 0 - ¢ 2 @ 9 ZE 11 a ms tr) nm ool ur oooo ^ fa ous' l fi fi s X s @ u W u 4) d H - # 0s os l sk u 3 u fi X u] b sz u 6 , ln Su D (I) lQDIQDS . en <atldJourV Table H5 cr 1 among others, CUE In , 1 X U used flow rate flow rate layer i V) Y I tn z LIFrccl min 5 (nm / s) UC a, v, 5 First 51H4 / He = 0105 'tl + GeH s S ~ tn tD E u- ~ oH C GeH4 / He = 0.05 = 50 0.18, l If 3xl04 Second 4J E <1.5 -r SiH4 / He = 0.5 i14 0.18 o z D O3 X x cH 3 v su: r X lz tn S c vz Q vo + cE X il v cD> v sr n O H 4 b W 9 en sr s aJ \ s' UX or ko o 2 H t N x at sa: n \ vo slmo DCE t to HH v U tO 11 W 3 H 1 + t SS tD evv U uP o iH L tn tJ O e tn no FZ e tn 11 a mx5 U.N oolu) X - v 4 oo 9 o Q 11 ll 11 11 X QJ X @ O @ - - r \ 3 q) v er K0 v v tn: 3: Q es ~ QNH > v uz U m tn 4 4 Q u fi u 4Z F » S os lvu 3 u 4 X tn ts tn <D u 4 FS u D (I) ltDIQSS m X aqdlot Table H6 rlJ Ú e ~ among others, - CDE In U r ( VI a- I. IU) E CC 3 r (- In m U 7 C 9) to 5 cf OX \ o c (v, b \ E U 0> ri C vi aa - C. en E oo I) LN 501 1 cavrvrE c ( 4 s ci C ri \ oo Sm Flow rate, flow rate used, or layer rate C ci o -: U Gas speed ratio formation thickness en fi su u, c, speed- N + m: e IX) i : svf min = (nm / s) 3k c) C3 s tn os I C GeH4 / I! E = 0.05 4J B2II6 / <GeH + Si! I) = 0.18 1 UJ 9 cr 2 = r ( 3 a, NX 4Y I. c: SiH4 / I! e = 0.5 I m = 0 ec EO o <9 JJ QON W 3 H 1 ~ + 11 SSOE tr v u uX v C = o Y v en ¢ o HH> - n OHZ e tn 11 tn n tn n ool ur aooo O 11 11 11 {I. t QQO - k tQn ~ v ~ £ D =: o tn U m tn v fi s o s ou fi u WH, «oi SO s l sk u 3 u s: X tn ts n U e H n Su D (I)) DS uz rt aqdJot Table H7 cr C. oa, U Flow rate used (layer = i II ll l 0 c ccc, r: C 3 -c (- cn tn diakeit min o 0 * * (nm / s) r (aU3 \ 0 SH OE uF oH C (n layer Si! 14 / I [e = 0.05 .Q rg 44 cn = 50 B2H6 / (G3eH4 - iH4) l tZ oo fa tn Second fi e HH , <r 0.18 15 fi Cs oo CD o3 X r H s H o = u: 4 HH s \ tn X z H + > O 11 or ez> t n 0 = o H fi + WH tn - I so X \ o UX s h tJE: r X DHON < ar U m 11 c: l X o Dc e OO H- 4 u ON u 3-dl + ll sU sU ° t ~ ¢ ° ~ t v tn ¢ o H <ur, DOHZE tn 11 tn a or. t ool e'l @ - X oo o | ll X -o to -oo 3 0 tv kD sr tn (n O az {n b 4Y 4 s @ s ou fi u v H @ SOS lh U 3 U v X tn ts n s: 5 Su D (I)) SS en fd aqdJourV Table H8 oo, X C5 o \ CUE 0 c ( via- 1 1 I. IU) C C Pr (U L: C3r (- In rn U 7 L: Q) V1 5 -ci aor \ o r: rc m OIE tnn mb ~ V] L1 I ~ 01 C. II UN a) «) II UV ao a3 gvicnE r (r ( oo 03 warc- a < rr II C used flow rate flow rate discharge layer layer cncl gases speed ratio formation formation thickness Crn speed (itm) it 3: s min) tO <uS cn -m First Si2H 6 / He = 0.05 5i2H6 0 GeH4 / 5i2H6 = 4/100 0.5 Layer Ge !! 4 / He = 0.05 4J -v cl A: z ax i C3 mm I o <l oF cl Si H / He = 0.5 51 N W 3- 2 6 26 v 9 ,. UUX h C F1 t: N ah ¢ ° e en C en n mr - ur o un nu) 4 ooo 3 0 tv D ~ k ° SOS @ t) fi u 4J d - 0s @ s h U 3 U 4 x en es s 2 ue FQ tu 2 (I) R SS n U aqdJouw Table H9 Ic, rna- Iv) C fi mH) speed (im) to D s In min o aor \ uH orH c tn.a ofxç. ~ a II> a) ao vrJE c (c HC u ~ c, C ri \ oo C3Q3 XX fq q co ll s H o C4 u: r <H s \ tn Q zv + O @ ll v n> Mt xo H v HO t4 H tn n so \ \ l ux Cr vo o zmxx < Dd tD qx av to QH I s mr o Q l X o ZI CE o N H vu O ll W 3-d 1 ~ + sr zs aJ E v X uu A: zc N oe 24> OHF tn en DZE tn 11 a mU ~ tr) en n OO ~ T 3 NXXX o tn tO m en 4Y s @ s ou 4 u WFHH 0 so 4x do do s 2 u < H n aqdlo Table H10 Ic, 1 I'E 10 Q) Ic u EJ ~ IUcl c ( IV] a- II IUIC c rl C3- (A Ln r 0 3 CQ) v, c (aux \ o 0 r (q) r (C rn a bra j I. c 7L- I) Uu CO acncnE rl c, C rc 0 0 C7q) 5 Wrc- 1 - <| r (Cr, ac ( c II vi <11 tn oi + c (used flow- flow rate- c layer- + structure gases =: U r ( rnU speed- (nv) oH + + P: m min x (nm / s) Pt h - ° SiH (W / cm need First o yrc, l cseu O u 4 sr o xD c 9 0 U) -r (PX 3 Q) Q) \ Nm ax tO I \ sr v CI m L o Cv ' n Second 5iH4 + SiF4 0.18 1.5 19 HF fi u en rí en cr 3 - rc ++ C If 01 E vx t0 u ux vcxoo h DE OH -1 O - zo ZE en + en 11 cE mr In IP scol ur un oooo <oo 4 11 11 11 ll § oooo tu al o t of er t vo vv 3 tll XLXXXX h en, 4 h tu <N, -4 o cn tn tO m en t J SOS ou 4 u aH e 0 so h U 3 U JJ X en ts tn sz ue s W4 (F q dS , en 4 aqdlow Table H11 J lr Oa) A coE u HH s build-up of gases velocity ratio formation thickness 1 speed l 0 c 4 [-H 4J min) c. In Y, First -r1'0 UX \ O Sh layer SiH4 / He = 0.05 SiH + GeH G 0 c (O, c pa - a O Second - II: rs aa az Layer SiH4 / He = 0.5 SiH 4 EG ~ ~ H ou B2H6 / He = l03 c 3 o3 L r ~ I ~ c H ll 3 W ov s ~ o 3: o u: c H 9 s X tn x O h mr + ul ro 11 sr ll 3> sr S er n 0 xox H v O - u H tn v en uxv vo o so z> tx ~ x DH o N x N ar O m ul m : CE x õ W 3-F l + ll UUX h CX o X WOHH ur, 1 : 3 to -1 TU n 11 uz a or w tnm ool ul l v - vo - o ogl | X - x :: u xu 3 0 XXXXX o (: n O mr: nm l <@ s (DUWU WF, 4 -4 tn S os lh U 3 Ù 4Y w tn t4 tn s 2 UU n tu z (I} lM3TM3S n U aqdJowV Table H12 3 OQ) cr X - r: uE rn t ~ r aY II IV) C + rp CC 3 -r (- rn rn UC Q1 c (auro - yr (cn aE U] n aa tn Q t ~ O c II UU ao arnvlE c, Clc \ O 0 3Q3 wa-i- I. tr. a II eov 0 Flow, flow rate, discharge layer, layer used build-up of gases speed ratio dunqs formation thickness VIL, c \ tn (m) ¢: ev + N min) (nm / s) First SiH4 / He = 0.05 5i114 r (GeH / SiH4 = 4/10% 0 C3 - ( s> GeI! 4 / J! e = 0.05 X B2H6 / (GeH4 + 5iH4) = 0.18 1 3 a, Q) NXN ax SiH4 / IIe = 0.5 SiII4 = 200 B2 !! 6 / Si !! 4 = 2xl04 0.18 1.5 15 m Layer - ~ a mU ~ un ur no) ool un l ov- oo ^ ~ 3 0 vv VD v k0 :> rD r: n O m rn m | vv SOS ouvu 4 t4 0s os lh U 3 U 4 L rn N rn sz ue d Q tu z (I) lMdTM3S rn 4 aqdJouw Table H13 Layer used flow rate flow rate discharge layer formation structure gases speed ratio power output speed speed (W / cm²) speed (Standard cm³ / min) (nm / s) Second SiH4 / He = 0.5 SiH4 = 200 1.5 Layer 0.18 B2H6 / He = 10-3 B2H6 / SiH4 = 1x10-4 Table H13A Sample No. 1301H 1302H 1303H 1304H 1305H 1306H 1307H 1308H 1309H 1310H Beips. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. First layer 203 204 205 206 207 208 209 210 211 212 Layer thickness The second 19 15 15 15 15 15 15 19 19 19 Layer (µm) valuation : excellent: good Table H 14 Layer used flow rate flow rate discharge layer formation structure gases speed ratio power output speed speed (W / cm²) speed (Standard cm³ / min) Second SiH4 / He = 0.5 SiH4 = 200 1.5 Layer 0.18 PH3 / He = 10-3 PH3 / SiH4 = 9x10-5 Table H 14A 1401H 1402H 1403H 1404H 1405H 1406H 1407H 1408H 1409H 1410H Sample no. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. Ex. First layer 203 204 205 206 207 208 209 210 211 212 Layer thickness The second 19 15 15 15 15 15 15 19 19 19 Layer (µm) valuation : excellent: good Table H15 Used flow rate flow rate discharge layer condition gases speed ratio or area per- formance thickness speed (standard ratio (W / cm²) (µm) cm³ / min) 12-1H Ar 200 Si disk: graphite = 1.5: 8.5 0.3 0.5 12-2H Ar 200 Si disk: graphite = 0.5: 9.5 0.3 0.3 12-3H Ar 200 Si disk: graphite = 6: 4 0.3 1.0 12-4H SiH4 / He = 1 SiH4 = 15 SiH4: C2H4 = 0.4: 9.6 0.18 0.3 C2H4 12-5H SiH4 / He = 0.5 SiH4 = 100 SiH4: C2H4 = 5: 5 0.18 1.5 C2H4 12-6H SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 1.5: 1.5: 7 0.18 0.5 SiF4 / He = 0.5 = 150 C2H4 12-7H SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 0.3: 0.1: 9.6 0.18 0.3 SiF4 / He = 0.5 = 15 C2H4 12-8H SiH4 / He = 0.5 SiH4 + SiF4 SiH4: SiF4: C2H4 = 3: 3: 4 0.18 1.5 SiF4 / He = 0.5 = 150 C2H4 Table H16 r I 121 r II ri lation conditions the amorphous sample No. to ONO - -H - -o4 cu o 12-201 !! (05 tt) 12-501 !! a) O cn i I aa ~ a ~ o I o lol I. o \ ~ 1Chl 12-302 !! 12-40211 12-502 !! 12-602 !! "-""-IO l2-2H 0 0 ot o 0 0 0 0 0 0 0 0 0 0 0 0 0 0 12-20311 :: In 12-403 !! 12-503 !! 191 12-703 !! woX X 12-1003 !! 12-3 !! oL o 0 0 0 0 ton Zo 0 0 CO Iml 12-204 !! | ° (81 o o1; o, N (02 tN (GNONO N ON V VI NNO to Co ') o X (o) j O v Cd Irl (pi X @) ~ O ~ O oooooooo 12-1005 !! > 1 Co 'Qo; Q0% i CQ 61 @o; @. @ Co Co QO "@ Co N C0j @ NO l o rl C ° ° t11 ° 12-306 !! to 12-506 !! bx rn ~ o o ko @ from ~ Co, @ @) why Co., 'vo vo tD Co' 9 Go Coj @ Go Qo 12-20711 12-307 !! 12-407 !! hl 'C cl o, o m <r. ~ 0 0 0 ci c (r ( 12-208 !! wÕ) 12-4081! > O c0 O 0 . ur 0 0 tn ur In rn rn tn tn ~ Z: to O (NOK C> JO rJ SN 4 NCNO q O D l ~ tv O mr% SX @ XO ~ O X oLo oo 'L ooc) Hl 91 HH -IHH ~ ~ -1 ° t1 ° m1 os 4 xl @ QQ bx oo rnL ° OL m1 ° l ~ no ~ o (> F t1 <N w N | S (N 41 NONO 91 o t1 0 o1 o xl t t14 xoo nL 1 N ° l ° lo cz ~! N ° N | ON | o SNX NW H (OJ ~ ONO cE Q n E oo w a Lw XXXXXXXX D tv H CS mv In 90 rs ax -up lllllll u) oo c) - H <<<H< Sample No. / Rating Overall rating of the image rating of the quality durability Evaluation standard:: excellent-: good net Table H17 coru Sample No. 1301H 1302}! 1303H 1304H N 1306H 1307H 0 X Si: oo iyr Si al 9.7: 0.3 8.8: 1.2 7.3: 2.7 4.8: 5.2 3: 7 2: 8 0.8: 9.2 o u'l .. a sn the N 10 HH n sn .. co (D rn ßD N (fi) H wb ^ ur N O r). H. O sn oo - X co IH õ rn rn n cc Z; 'LCe C; / V a) Ee>> 00 DCU) t- 4- o as p:: Y X u yoc u 4 vp ..: Y -Sc @H H a) 3 < H> 9 rD Q 2 ~ rnv rnm O : very good: good: for practical use X: generation of image defects use sufficient table H18 IT m N 3: 4 0 co X 0 Sample No. 1401H 1402H 14O3H 14O4H 1405H 14O6H 1407H 1408H O P. "rl m vo where: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 z 0.8: 9.2 H cs sr Rating dr picture sn .. ~ fW v sr ur I tr to or .. o ~ XD rv H oa z Xe. mD : very good: good: for practical use X: generation of image defects use sufficient table H19 Sample No. 1501H 1502H 1503H 1504H 1505H 1506H 1507H 1508H SiH4: SiF4: C2H4 5: 4: 1 3: 3.5: 3.5 2: 2: 6 1: 1: 8 0.6: 0.4: 9 0.2: 0.3: 9.5 0.2: 0, 15: 9.65 0.1: 0.1: 9.8 (Flow rate speedy ratio) Si: C 9: 1 7: 3 5.5: 4.5 4: 6 3: 7 2: 8 1.2: 8.8 0.8: 9.2 (Salary ratio) Evaluation of the X picture quality : very good o: good #: for practical use X: generation of image defects use sufficient table H20 Thickness of the Amorphous specimen No. Layer (II) results (µm) Propensity to generate 1601H 0.001 of artifacts no artifacts during 1602H 0.02 20,000 repetitions stable for 50,000 or 1603H 0.05 more repetitions stable for 200,000 or 1604H 1 more repetitions L eerseite

Claims (57)

Claims 1. Photoconductive recording element with a Carrier for a photoconductive recording element and an amorphous layer, thereby characterized in that the amorphous layer has a layer structure which is one of a Amorphous material consisting of silicon atoms and germanium atoms, first Layer portion and an amorphous material containing silicon atoms existing and photoconductivity-showing, second layer region, wherein the first and second layer regions successively from the side of the wearer are provided forth. 2. Photoconductive recording element according to claim 1, characterized characterized in that in the first layer area and / or the second layer area Hydrogen atoms are included. 3. Photoconductive recording element according to claim 1 or 2, characterized characterized in that in the first layer area and / or the second layer area Halogen atoms are included. 4. Photoconductive recording element according to claim 1, characterized characterized in that the germanium atoms in the direction of the layer thickness in one uneven distribution state are included. 5. Photoconductive recording element according to claim 1, characterized characterized in that the first layer area contains a substance for regulating the Contains line properties. 6. Photoconductive recording element according to claim 5, characterized in that that it is in the substance for the regulation of the conduction properties to atoms belonging to group III of the periodic table. 7. Photoconductive recording element according to claim 6, characterized characterized in that the atoms belonging to group III of the periodic table from B, Al, Ga, In and T1 are selected. Conductive recording element according to Claim 5, characterized in that that the substance for the regulation of the conduction properties is a foreign substance from p-type is. Photoconductive recording element according to Claim 5, characterized in that that it is in the substance for the regulation of the conduction properties to atoms belonging to group V of the periodic table. 10. Photoconductive recording element according to claim 9, characterized characterized in that the atoms belonging to group V of the periodic table from P, As, Sb and ai are selected. 11. Photoconductive recording element according to claim 5, characterized characterized in that the substance is used for regulating the conduction properties Is n-type foreign matter. 12. Photoconductive recording element according to claim 1, characterized characterized in that the amorphous layer is a substance for regulating conduction properties contains. 13. Photoconductive recording element according to claim 12, characterized characterized in that the substance is used for regulating the conduction properties Is p-type foreign matter. 14. Photoconductive recording element according to claim 12, characterized characterized that the Substan7. for regulating the line properties is an n-type foreign matter. 1S. Photoconductive recording element according to claim 12, characterized characterized in that it is the substance for the regulation of the conduction properties are atoms belonging to group III of the periodic table. 16. Photoconductive recording element according to claim 15, characterized characterized in that the atoms belonging to group III of the periodic table from B, Al, Ga, In and Tl are selected. 17. Photoconductive recording element according to claim 12, characterized characterized in that it is the substance for the regulation of the conduction properties are atoms belonging to group V of the periodic table. 18. Photoconductive recording element according to claim 17, characterized characterized in that the atoms belonging to group V of the periodic table from P, As, Sb and Bi are selected. 19. Photoconductive recording element according to claim 12, characterized characterized in that the amorphous layer has a layer region (P) containing a foreign substance of p-type, and a layer region (N) containing an n-type impurity contains, has. 20. Photoconductive recording element according to claim 19, characterized characterized in that the layer area (P) and the layer area (N) with each other are in touch. 21. Photoconductive recording element according to claim 20, characterized characterized in that the layer area (P) as an end part layer area on the support heel: -te the amorphous layer is provided. 2 ?. A photoconductive recording element according to claim 1, characterized characterized in that the amorphous layer is in the end part layer area on the support side has a layer portion containing a p-type impurity. 23. Photoconductive recording element according to claim 1, characterized characterized in that the layer thickness T B of the first layer region and the layer thickness T of the second layer area have the following relationship to one another: TB / T <1. 24. Photoconductive recording element according to claim 1, characterized marked that the amorphous Layer hydrogen atoms and / or Contains halogen atoms. 25. Photoconductive recording element according to claim 1, characterized characterized in that the amorphous layer contains oxygen atoms. 26. Photoconductive recording element according to claim 25, characterized characterized in that the oxygen atoms in the direction of the layer thickness in one uneven distribution state are included. 27. The photoconductive recording element according to claim 26, characterized characterized in that the oxygen atoms are contained in a distribution state, in which they are more strongly enriched in the direction of the carrier side. 28. Photoconductive recording element according to claim 1, characterized characterized in that the amorphous layer is in the end part layer area on the support side contains oxygen atoms. 29. A photoconductive recording element, characterized by a Carrier for a photoconductive recording element, a first amorphous layer with a layer structure that contains a silicon atom and a germanium atom, amorphous material, the first layer region and one made of a silicon atom containing amorphous material and exhibiting photoconductivity, second Has layer region, wherein the first and the second layer region are consecutive are provided from the side of the carrier, and one made of a silicon atom and second amorphous material consisting of carbon atoms containing amorphous material Layer. 30. Photoconductive recording element according to claim 29, characterized characterized in that in the first layer area and / or the second layer area Hydrogen atoms are included. 31. Photoconductive recording element according to claim 29 or 30, characterized in that in the first layer area and / or the second layer area Halogen atoms are included. 32. Photoconductive recording element according to claim 29, characterized characterized in that the germanium atoms in the direction of the layer thickness in one uneven distribution state are included. 33. Photoconductive recording element according to claim 29, characterized characterized in that the first layer area contains a substance for regulating the Contains line properties. 34. Photoconductive recording element according to claim 33, characterized characterized that it is the substance for the regulation of the conduction properties are atoms belonging to group III of the periodic table. 35. Photoconductive recording element according to Claim 34, characterized characterized in that the atoms belonging to group III of the periodic table from B, Al, Ga, In and T1 are selected. 36. Photoconductive recording element according to claim 33, characterized characterized in that the substance Ü <ir regulates the conduction properties is a p-type impurity. 37. Photoconductive recording element according to claim 33, characterized characterized in that it is the substance for the regulation of the conduction properties are atoms belonging to group V of the periodic table. 38. Photoconductive recording element according to claim 37, characterized characterized in that the atoms belonging to group V of the periodic table from P, As, Sb and Bi are selected. 39. Photoconductive recording element according to claim 33, characterized characterized in that the substance is used for regulating the conduction properties Is n-type foreign matter. 40. Photoconductive recording element according to claim 29, characterized characterized in that the first amorphous layer is a substance for regulation the line properties. 41. Photoconductive recording element according to claim 40, characterized characterized in that the substance is used for regulating the conduction properties Is p-type foreign matter. 42. Photoconductive recording element according to claim 40, characterized characterized in that the substance is used for regulating the conduction properties Is n-type foreign matter. 43. Photoconductive recording element according to claim 40, characterized characterized in that it is the substance for the regulation of the conduction properties are atoms belonging to group III of the periodic table. 44. Photoconductive recording element according to claim 42, characterized characterized in that the atoms belonging to group III of the periodic table from B, Al, Ga, In and T1 are selected. 45. Photoconductive recording element according to claim 42, characterized characterized in that it is the substance for the regulation of the conduction properties are atoms belonging to group V of the periodic table. 46. Photoconductive recording element according to claim 45, characterized characterized in that the atoms belonging to group V of the periodic table from P, As, Sb and Bi are selected. 47. Photo-sensitive recording element according to Claim 40, characterized characterized in that the first amorphous layer has a layer region (P), the one P-type foreign matter contains, and a layer portion (N) containing a foreign matter contains n-type. 48. Photoconductive recording element according to claim 47, characterized characterized in that the layer area (P) and the layer area (N) with each other are in touch. 49. Photoconductive recording element according to claim 48, characterized characterized in that the layer area (P) is the end part layer area on the carrier side the first amorphous layer is provided. 50. Photoconductive recording element according to claim 29, characterized characterized in that the first amorphous layer in the end portion layer region at the Carrier side a layer portion containing a p-type impurity. 51. Photoconductive recording element according to claim 29, characterized characterized in that the layer thickness T B of the first layer region and the layer thickness T of the second layer area have the following relationship to one another: TB / T fl. 52. Photoconductive recording element according to claim 29, characterized characterized in that the first amorphous layer is hydrogen and / or halogen contains. 53. Photoconductive recording element according to claim 29, characterized characterized in that the first amorphous layer contains oxygen atoms. 54. Photoconductive recording element according to claim 53, characterized in that characterized in that the oxygen atoms in the direction of the layer thickness in one uneven distribution state are included. 55. Photoconductive recording element according to claim 54, characterized in that characterized in that the oxygen atoms are contained in a distribution in which they are more enriched towards the carrier side. 56. Photoconductive recording element according to claim 29, characterized characterized in that the first amorphous layer in the end portion layer region at the Carrier side contains oxygen atoms. 57. Photoconductive recording element according to claim 29, characterized characterized in that the second amorphous layer is hydrogen and / or halogen contains.