DE3262032D1 - Bipolar transistor controlled by field effect having an insulated gate electrode - Google Patents

Bipolar transistor controlled by field effect having an insulated gate electrode

Info

Publication number: DE3262032D1
Authority: DE; Germany
Prior art keywords: gate electrode; field effect; bipolar transistor; insulated gate; transistor controlled
Prior art date: 1981-06-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

DE8282401036T

Other languages

English (en)

Inventor

Bernard Descamps

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics SA

Original Assignee

Thomson CSF SA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-06-16

Filing date

1982-06-08

Publication date

1985-03-07

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9259576&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3262032(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

1982-06-08 Application filed by Thomson CSF SA filed Critical Thomson CSF SA

1985-03-07 Application granted granted Critical

1985-03-07 Publication of DE3262032D1 publication Critical patent/DE3262032D1/de

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs

DE8282401036T 1981-06-16 1982-06-08 Bipolar transistor controlled by field effect having an insulated gate electrode Expired DE3262032D1 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR8111835A FR2507820A1 (fr)	1981-06-16	1981-06-16	Transistor bipolaire a commande par effet de champ au moyen d'une grille isolee

Publications (1)

Publication Number	Publication Date
DE3262032D1 true DE3262032D1 (en)	1985-03-07

Family

ID=9259576

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8282401036T Expired DE3262032D1 (en)	1981-06-16	1982-06-08	Bipolar transistor controlled by field effect having an insulated gate electrode

Country Status (5)

Country	Link
US (1)	US4495513A (de)
EP (1)	EP0068945B1 (de)
JP (1)	JPS57211773A (de)
DE (1)	DE3262032D1 (de)
FR (1)	FR2507820A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59132672A (ja) *	1983-01-19	1984-07-30	Nissan Motor Co Ltd	Ｍｏｓトランジスタ
JP2644989B2 (ja) *	1984-05-09	1997-08-25	株式会社東芝	導電変調型ｍｏｓｆｅｔ
JPH0614550B2 (ja) *	1984-05-26	1994-02-23	株式会社東芝	半導体装置
JPS60254658A (ja) *	1984-05-30	1985-12-16	Toshiba Corp	導電変調型ｍｏｓｆｅｔ
US4672407A (en) *	1984-05-30	1987-06-09	Kabushiki Kaisha Toshiba	Conductivity modulated MOSFET
JPH0783112B2 (ja) *	1985-01-17	1995-09-06	株式会社東芝	導電変調型ｍｏｓｆｅｔ
US4639754A (en) *	1985-02-25	1987-01-27	Rca Corporation	Vertical MOSFET with diminished bipolar effects
JPH0612827B2 (ja) *	1985-02-28	1994-02-16	株式会社東芝	導電変調型ｍｏｓｆｅｔ
US4809045A (en) *	1985-09-30	1989-02-28	General Electric Company	Insulated gate device
US4779123A (en) *	1985-12-13	1988-10-18	Siliconix Incorporated	Insulated gate transistor array
JP2700025B2 (ja) *	1985-12-24	1998-01-19	富士電機株式会社	バイポーラたて形ｍｏｓｆｅｔ
GB2186117B (en) *	1986-01-30	1989-11-01	Sgs Microelettronica Spa	Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication
JPS6380572A (ja) *	1986-09-24	1988-04-11	Fuji Electric Co Ltd	伝導度変調型たて型ｍｏｓ−ｆｅｔ
US5338693A (en) *	1987-01-08	1994-08-16	International Rectifier Corporation	Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET
JP2700026B2 (ja) *	1987-05-12	1998-01-19	富士電機株式会社	絶縁ゲートバイポーラ導通形トランジスタ
JP2786196B2 (ja) *	1987-07-21	1998-08-13	株式会社デンソー	絶縁ゲート型半導体装置
EP0313000B1 (de) *	1987-10-21	1998-05-06	Siemens Aktiengesellschaft	Verfahren zum Herstellen eines Bipolartransistors mit isolierter Gateelektrode
JPH0648729B2 (ja) *	1988-02-24	1994-06-22	シーメンス、アクチエンゲゼルシシヤフト	電界効果制御可能のバイポーラ・トランジスタ
JPH02278880A (ja) *	1989-04-20	1990-11-15	Nippondenso Co Ltd	絶縁ゲート型バイポーラトランジスタ
WO1991003078A1 (en) *	1989-08-17	1991-03-07	Ixys Corporation	Insulated gate thyristor with gate turn on and turn off
US5381025A (en) *	1989-08-17	1995-01-10	Ixys Corporation	Insulated gate thyristor with gate turn on and turn off
US5194394A (en) *	1989-10-23	1993-03-16	Mitsubishi Denki Kabushiki Kaisha	Thyristor and method of manufacturing the same
JPH0795596B2 (ja) *	1989-10-23	1995-10-11	三菱電機株式会社	サイリスタ及びその製造方法
JP2536302B2 (ja) *	1990-04-30	1996-09-18	日本電装株式会社	絶縁ゲ―ト型バイポ―ラトランジスタ
US5359220A (en) *	1992-12-22	1994-10-25	Hughes Aircraft Company	Hybrid bipolar/field-effect power transistor in group III-V material system
US5592006A (en) *	1994-05-13	1997-01-07	International Rectifier Corporation	Gate resistor for IGBT
US5654562A (en) *	1995-03-03	1997-08-05	Motorola, Inc.	Latch resistant insulated gate semiconductor device
JP3384198B2 (ja) *	1995-07-21	2003-03-10	三菱電機株式会社	絶縁ゲート型半導体装置およびその製造方法
US5831318A (en) *	1996-07-25	1998-11-03	International Rectifier Corporation	Radhard mosfet with thick gate oxide and deep channel region
DE19750413A1 (de) *	1997-11-14	1999-05-20	Asea Brown Boveri	Bipolartransistor mit isolierter Steuerelektrode (IGBT)
US6492663B1 (en) *	1999-05-20	2002-12-10	Richard A. Blanchard	Universal source geometry for MOS-gated power devices
US7599228B1 (en) *	2004-11-01	2009-10-06	Spansion L.L.C.	Flash memory device having increased over-erase correction efficiency and robustness against device variations
JP5119589B2 (ja) *	2005-11-04	2013-01-16	富士電機株式会社	半導体装置
CN107078160B (zh) *	2014-10-20	2020-07-17	三菱电机株式会社	半导体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4032961A (en) *	1974-10-16	1977-06-28	General Electric Company	Gate modulated bipolar transistor
FR2364528A1 (fr) *	1976-09-10	1978-04-07	Thomson Csf	Cellule de memoire a transistor tetrode et circuit de memoire comportant de telles cellules
JPS5939904B2 (ja) *	1978-09-28	1984-09-27	株式会社東芝	半導体装置
US4367509A (en) *	1979-05-02	1983-01-04	Rca Corporation	Anti-latch circuit for power output devices using inductive loads
US4407005A (en) *	1980-01-21	1983-09-27	Texas Instruments Incorporated	N-Channel JFET device having a buried channel region, and method for making same

1981
- 1981-06-16 FR FR8111835A patent/FR2507820A1/fr active Granted
1982
- 1982-06-08 EP EP82401036A patent/EP0068945B1/de not_active Expired
- 1982-06-08 DE DE8282401036T patent/DE3262032D1/de not_active Expired
- 1982-06-14 US US06/388,500 patent/US4495513A/en not_active Expired - Lifetime
- 1982-06-15 JP JP57102928A patent/JPS57211773A/ja active Granted

Also Published As

Publication number	Publication date
US4495513A (en)	1985-01-22
JPH0358187B2 (de)	1991-09-04
EP0068945A1 (de)	1983-01-05
JPS57211773A (en)	1982-12-25
EP0068945B1 (de)	1985-01-23
FR2507820B1 (de)	1983-12-02
FR2507820A1 (fr)	1982-12-17

Publication	Publication Date	Title
DE3262032D1 (en)	1985-03-07	Bipolar transistor controlled by field effect having an insulated gate electrode
DE3279955D1 (en)	1989-10-26	Insulated gate field effect transistor
DE3275684D1 (en)	1987-04-16	Insulated gate field effect transistor
GB2080023B (en)	1984-03-14	Lateral insulated gate field effect transistor
GB2026239B (en)	1983-02-02	Field effect transistor with an insulated gate electrode
AU568446B2 (en)	1987-12-24	Drive circuit for insulated gate bipolar transistor
GB1556276A (en)	1979-11-21	Insulated gate field effect transistors
GB2071955B (en)	1983-12-14	Field-effect transistor current stabilizer
EP0450082A4 (en)	1992-05-06	Insulated gate bipolar transistor
GB2086652B (en)	1984-09-26	An insulated gate transistor with sit characteristics
DE3275680D1 (en)	1987-04-16	Insulated gate field effect transistor and its manufacture
JPS5239381A (en)	1977-03-26	Insulated gate fet transistor
EP0101608A3 (en)	1986-06-11	Insulated gate type field effect transistor having a silicon gate electrode
GB2118774B (en)	1985-11-27	Insulated gate thin film transistor
JPS54125986A (en)	1979-09-29	Semiconductor including insulated gate type transistor
GR880300016T1 (en)	1988-10-18	Insulated gate type field effect transistor
JPS54131884A (en)	1979-10-13	Field effect transistor having narrow channel
DE3650606D1 (de)	1997-04-30	Schnellschaltender, lateraler Feldeffekttransistor mit isolierter Steuerelektrode
JPS54147787A (en)	1979-11-19	Insulated gate field effect transistor
JPS5797678A (en)	1982-06-17	Method of producing insulated gate type field effect transistor
EP0338312A3 (en)	1990-03-21	Insulated gate bipolar transistor
DE2961108D1 (en)	1981-12-10	Method of production of an insulated gate field effect transistor
GB2162999B (en)	1987-12-31	Manufacturing insulated gate field effect transistors
JPS5553463A (en)	1980-04-18	Insulated gate field effect transistor
DE3270103D1 (en)	1986-04-30	Insulated gate field effect transistor

Legal Events

Date	Code	Title	Description
1997-01-02	8327	Change in the person/name/address of the patent owner	Owner name: SGS-THOMSON MICROELECTRONICS S.A., GENTILLY, FR
1997-01-02	8328	Change in the person/name/address of the agent	Free format text: KLUNKER UND KOLLEGEN, 80797 MUENCHEN