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DE3177076D1 - Methods and apparatus for forming thin-film heterojunction solar cells from i-iii-vi2 chalcopyrite compounds, and solar cells produced thereby - Google Patents

Methods and apparatus for forming thin-film heterojunction solar cells from i-iii-vi2 chalcopyrite compounds, and solar cells produced thereby

Info

Publication number
DE3177076D1
DE3177076D1 DE8282900474T DE3177076T DE3177076D1 DE 3177076 D1 DE3177076 D1 DE 3177076D1 DE 8282900474 T DE8282900474 T DE 8282900474T DE 3177076 T DE3177076 T DE 3177076T DE 3177076 D1 DE3177076 D1 DE 3177076D1
Authority
DE
Germany
Prior art keywords
semiconductor layer
transient
type
solar cells
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282900474T
Other languages
English (en)
Inventor
Reid A Mickelsen
Wen Shuh Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing Co
Original Assignee
Boeing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boeing Co filed Critical Boeing Co
Application granted granted Critical
Publication of DE3177076D1 publication Critical patent/DE3177076D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/169—Photovoltaic cells having only PN heterojunction potential barriers comprising Cu2X/CdX heterojunctions, wherein X is a Group VI element, e.g. Cu2O/CdO PN heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/063—Gp II-IV-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell

Landscapes

  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Glass Compositions (AREA)
  • Light Receiving Elements (AREA)
DE8282900474T 1980-12-31 1981-12-21 Methods and apparatus for forming thin-film heterojunction solar cells from i-iii-vi2 chalcopyrite compounds, and solar cells produced thereby Expired DE3177076D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/221,761 US4335266A (en) 1980-12-31 1980-12-31 Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
PCT/US1981/001714 WO1982002459A1 (en) 1980-12-31 1981-12-21 Methods and apparatus for forming thin-film heterojunction solar cells from i-iii-vi2 chalcopyrite compounds,and solar cells produced thereby

Publications (1)

Publication Number Publication Date
DE3177076D1 true DE3177076D1 (en) 1989-08-03

Family

ID=22829266

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282900474T Expired DE3177076D1 (en) 1980-12-31 1981-12-21 Methods and apparatus for forming thin-film heterojunction solar cells from i-iii-vi2 chalcopyrite compounds, and solar cells produced thereby

Country Status (16)

Country Link
US (1) US4335266A (de)
EP (1) EP0067860B1 (de)
JP (1) JPH0557746B2 (de)
AT (1) ATE44334T1 (de)
AU (1) AU537139B2 (de)
BE (1) BE890348A (de)
CA (2) CA1185347A (de)
DE (1) DE3177076D1 (de)
DK (1) DK387082A (de)
ES (1) ES508455A0 (de)
GB (2) GB2106316B (de)
GR (1) GR76957B (de)
IL (1) IL64676A (de)
IT (1) IT1172197B (de)
NO (1) NO822922L (de)
WO (1) WO1982002459A1 (de)

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EP0067860A1 (de) 1982-12-29
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GB2144914B (en) 1985-10-09
IL64676A0 (en) 1982-03-31
ATE44334T1 (de) 1989-07-15
ES8308157A1 (es) 1983-08-01
AU8081282A (en) 1982-08-02
ES508455A0 (es) 1983-08-01
GB2106316B (en) 1985-09-25
US4335266A (en) 1982-06-15
EP0067860A4 (de) 1985-07-30
BE890348A (fr) 1982-01-04
GR76957B (de) 1984-09-04
CA1185347A (en) 1985-04-09
IT1172197B (it) 1987-06-18
JPH0557746B2 (de) 1993-08-24
EP0067860B1 (de) 1989-06-28
IT8150022A0 (it) 1981-12-29
CA1201192A (en) 1986-02-25
DK387082A (da) 1982-08-30
AU537139B2 (en) 1984-06-07
WO1982002459A1 (en) 1982-07-22
JPS57502196A (de) 1982-12-09
IL64676A (en) 1985-01-31

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