DE3146083A1 - Method of producing an absorber for solar installations - Google Patents
Method of producing an absorber for solar installationsInfo
- Publication number
- DE3146083A1 DE3146083A1 DE19813146083 DE3146083A DE3146083A1 DE 3146083 A1 DE3146083 A1 DE 3146083A1 DE 19813146083 DE19813146083 DE 19813146083 DE 3146083 A DE3146083 A DE 3146083A DE 3146083 A1 DE3146083 A1 DE 3146083A1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- absorber
- coating
- ticl
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 16
- 239000006096 absorbing agent Substances 0.000 title claims description 7
- 238000009434 installation Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
- F24S70/225—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption for spectrally selective absorption
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
- F24S70/25—Coatings made of metallic material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Physical Vapour Deposition (AREA)
Description
gü/sdgü / sd
M.A.N. MASCHINENFABRIK AUGSBURG-NÜRNBERG Aktiengesell schaftM.A.N. MASCHINENFABRIK AUGSBURG-NÜRNBERG Aktiengesellschaft
Ruh rchem ie Aktiengesei 1 schaftRuh rchem he Aktiengesellschaft
München, 17. November 1981 10Munich, November 17, 1981 10
Verfahren zur Herstellung eines Absorbers für Solaranlagen Process for the production of an absorber for solar systems
Die Erfindung bezieht sich auf ein Verfahren zur Herstellung eines Absorbers für Solaranlagen durch Be. schichtung eines Substrats mittels eines Gasphasenprozesses. The invention relates to a method for producing an absorber for solar systems by Be. layering of a substrate using a gas phase process.
Ein bekannter Gasphasenprozeß ist die chemische Abscheidung aus der Gasphase (CVD), mit der Absorberschichten aus nichtmetallischen Stoffen oder hochschmelzenden Metallen hergestellt werden. Durch eine starke, feinteilige Strukturierung des Niederschlages konnte bei Verwendung bestimmter Beschichtungsinateriaiien Absorberschichten mit hoher Lichtabsorption hergestellt werden. Es hat sich jedoch gezeigt, daß diese Schichten keine ausreichende Haftung und eine schlechte Teiiiperaturstabi 1 itat besitzen.A well-known gas phase process is chemical deposition from the gas phase (CVD), with the absorber layers made of non-metallic materials or refractory metals getting produced. A strong, finely divided structure of the precipitate enabled certain coating materials absorber layers can be produced with high light absorption. It has been found, however, that these layers are not sufficient Adhesion and poor partial temperature stability.
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren der eingangs genannten Art zu finden, mit dein Absorber mit Schichten hergestellt werden können, die unter Beibehaltung eines hohen Absorptionsvermögens auch bei höheren Temperaturen eine gute Haftung mit dem Substrat aufweisen.The invention is based on the object of a method to find the type mentioned above, with your absorber can be produced with layers that are maintained a high absorption capacity have good adhesion to the substrate even at higher temperatures.
7.20967.2096
3U60833U6083
Die Aufgabe ist erf i ndungsgeniaß dadurch gelöst, daß ein Substrat aus einer nickel- und titanhalti gen Legierung verwendet und einer Vorbehandlung unterzogen wird, und daß der Abscheidungsprozeß in einer titanhaltigen Gasphase durchgeführt wird, wobei die Schichtbildung unter Beteiligung des Substratmaterials erfolgt.The object is achieved according to the invention in that a substrate made of an alloy containing nickel and titanium is used and subjected to a pretreatment, and that the deposition process in a titanium-containing gas phase is carried out, the stratification with participation of the substrate material takes place.
Bei dem erfindungsgemaßen Verfahren erfolgt eine Diffusion zwischen Elementen des Substrats und der Schicht, so daß die aufgetragene Schicht sich in einer festen Verankerung mit dem Substrat bindet. Durch die gleichzeitige starke Strukturierung des Niederschlages konnte eine sehr hohe Absorption für den solaren Spektralbereich gemessen werden.In the method according to the invention, diffusion takes place between elements of the substrate and the layer so that the applied layer is firmly anchored binds to the substrate. Due to the simultaneous strong Structuring of the precipitation could be a very high Absorption can be measured for the solar spectral range.
Mit diesem Verfahren wird die intermetallische Phase Ni3Ti gebildet, die nicht nur ein hohes Absorptionsvermögen, sondern zusatzlich eine hohe Oxidationsbeständigkeit aufweist. Es hat sich auch gezeigt, daß diese Schicht bei Legierungen bis herab zu etwa 5 Atom % Ni-Gehalt und etwaWith this process, the intermetallic phase Ni 3 Ti is formed, which not only has a high absorption capacity, but also a high resistance to oxidation. It has also been shown that this layer in alloys down to about 5 atom % Ni content and about
0,5% Ti-Gehalt gebildet werden kann.0.5% Ti content can be formed.
Ein weiterer Vorteil des erfindungsgemaßen Verfahrens liegt darin, daß nicht, wie bei der üblichen chemischenAnother advantage of the method according to the invention lies in the fact that not, as with the usual chemical
Gasphasenabscheidung mindestens zwei gasförmige Reaktions-25 Gas phase deposition at least two gaseous reaction 25
Partner in diffizil zu opt linierenden Mengen und Mengenverhältnissen einzudosieren sind, und daß im Reaktionsraum für eine gleichmäßiye Durchmischung zu sorgen ist, sondern daß hier nur ein einziger Reaktionspartner notwendig ist.Partners in quantities and proportions that are difficult to optimize are to be metered in, and that uniform mixing is to be ensured in the reaction chamber, but that only a single reaction partner is necessary here is.
Absorberschichten mit besonders hohem Absorptionsvermögen können durch Titantetrachlorid (TiCl4) als Reaktionsgas erzeugt werden.Absorbent layers with a particularly high absorption capacity can be produced using titanium tetrachloride (TiCl 4 ) as the reaction gas.
7.2096
17.11.19817.2096
11/17/1981
3H60833H6083
Χ Eine Optimierung der Resultate wird dadurch erreicht, wenn im Gesamtgasstroin des Abschei dungsprozesses ca. 1 VoI % TiCI4 verwendet wird.Χ The results are optimized if approx. 1% by volume of TiCl 4 is used in the total gas flow of the separation process.
Bei einer Beschichtungsteinperatur von ca. 900*C werden mit einer Beschichtungsdauer von bereits etwa 1 Stunde stabile Schichten mit ausreichendem Absorptionsvermögen gebildet. Die Beschichtungstemperatur betragt vorzugsweise 700-1000*C, wobei die Beschichtungsdauer zwischen 3 bis 1 Stunden mit der Temperatur abnimmt.At a coating stone temperature of approx. 900 * C, a coating time of approx. 1 hour stable layers with sufficient absorption capacity are formed. The coating temperature is preferably 700-1000 * C, with the duration of the coating between 3 and 1 hours decreasing with the temperature.
Es wurde ein Substrat aus Edelstahl X5 CrNiTi 18 q einer Schleif- und Polierbehandlung unterzogen, bei der eine !5 maximale Rauhigkeit von Ra = lzt,m erreicht wurde.A substrate made of stainless steel X5 CrNiTi 18 q was used Subjected to grinding and polishing treatment in which one ! 5 maximum roughness of Ra = lzt, m has been reached.
Das vorbehandelte Substrat wurde dann in einem gegen den Zutritt der Atmosphäre geschützten Reaktionsraum im Wasserstoffstrom auf eine Temperatur von ca. 900*C gebracht.The pretreated substrate was then in a counter the access of the atmosphere-protected reaction space in the hydrogen stream to a temperature of approx. 900 * C brought.
Nach Erreichen dieser Temperatur wurde dem Wasserstoffstrom die reaktive Komponente Titantetrachlorid (TiCl^) zugesetzt, indem ein Teilstrom des Wasserstoffes oder ein zusatzlicher Argonstrom über ein thermostatisiertes, flüssiges, TiCl4 enthaltendes Verdampfergefaß geleitet wurde. Der Trägergasstrom und die Verdampfertemperatur wurden so ausgewählt, daß die Menge des mitgeführten gasförmigen TiCl4 1 VoI % betrug. Die Gasleitung zwischen zwischen Verdampfer und Reaktionsraum wurde zur Vermeidung von TiCK-Kondensation beheizt.After this temperature had been reached, the reactive component titanium tetrachloride (TiCl ^) was added to the hydrogen stream by passing a partial stream of hydrogen or an additional argon stream over a thermostated, liquid, TiCl 4- containing evaporator vessel. The carrier gas flow and the evaporator temperature were selected so that the amount of gaseous TiCl 4 entrained was 1% by volume. The gas line between the evaporator and the reaction chamber was heated to avoid TiCK condensation.
Die reaktive Gasphase wirkte ca. 1 Stunde bei 900*C auf das Substrat ein. Danach wurde die TiCl.-Zugabe unterbrochen und der Reaktionsraum mit dem beschichteten Probenkörper im Wasserstoff- oder Argonstrom auf Raumtemperatur abgekühlt.The reactive gas phase acted on the substrate for about 1 hour at 900 ° C. The addition of TiCl. Was then interrupted and the reaction space with the coated specimen in a hydrogen or argon stream to room temperature cooled down.
7.2096
17.11.19817.2096
11/17/1981
.:»U" 1 "- 'O I 3U6083.: »U" 1 "- 'O I 3U6083
Mit diesem Verfahren konnte auf dem Substrat eine festhaftende Schicht mit einer mittleren Schichtdicke im Zehntel-Mi kroineter-Berei ch erzeugt werden. Die maximale Größe von Einzel partikel η betrug etwa 1#. m. Die Schichten wiesen Absorptionsgrade im Bereich der sichtbaren Strahlung bis 98% auf. Die IR-Emission wird hierbei im wesentlichen von der Unterlage bestimmt.With this method, a firmly adhering Layer with an average layer thickness in the tenth of a Mi kroineter area can be generated. The maximal The size of the individual particles η was about 1 #. m. The layers exhibited degrees of absorption in the range of visible radiation up to 98%. The IR emission is here essentially determined by the document.
7.2096 17.11.19817.2096 11.17.1981
Claims (1)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19813146083 DE3146083A1 (en) | 1981-11-20 | 1981-11-20 | Method of producing an absorber for solar installations |
| ES517344A ES8307920A1 (en) | 1981-11-20 | 1982-11-12 | Method of producing an absorber for solar installations |
| FR8219304A FR2516944B1 (en) | 1981-11-20 | 1982-11-18 | PROCESS FOR MANUFACTURING AN ABSORBER FOR SOLAR INSTALLATIONS |
| IT49538/82A IT1148484B (en) | 1981-11-20 | 1982-11-19 | PROCEDURE FOR PRODUCING AN ABSORBER FOR SOLAR SYSTEMS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19813146083 DE3146083A1 (en) | 1981-11-20 | 1981-11-20 | Method of producing an absorber for solar installations |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3146083A1 true DE3146083A1 (en) | 1983-05-26 |
Family
ID=6146838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813146083 Withdrawn DE3146083A1 (en) | 1981-11-20 | 1981-11-20 | Method of producing an absorber for solar installations |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE3146083A1 (en) |
| ES (1) | ES8307920A1 (en) |
| FR (1) | FR2516944B1 (en) |
| IT (1) | IT1148484B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5358901A (en) * | 1993-03-01 | 1994-10-25 | Motorola, Inc. | Process for forming an intermetallic layer |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH503800A (en) * | 1968-10-12 | 1971-02-28 | Battelle Memorial Inst Interna | Method of manufacturing a titanium coating on a solid body |
| GB1314528A (en) * | 1969-06-06 | 1973-04-26 | Chrome Alloying Co | Pack diffusion coating with titanium |
| IL42550A (en) * | 1972-10-24 | 1976-08-31 | Gen Electric | Alloy coating method |
| JPS5936172B2 (en) * | 1978-09-04 | 1984-09-01 | 東洋鋼鈑株式会社 | Heat collection member for solar heat collection |
| JPS5950032B2 (en) * | 1979-11-30 | 1984-12-06 | 松下電工株式会社 | Manufacturing method of solar heat absorber |
| JPS5653346A (en) * | 1980-09-08 | 1981-05-12 | Yazaki Corp | Selective absorption face of solar heat utilizing heat collector and preparation thereof |
-
1981
- 1981-11-20 DE DE19813146083 patent/DE3146083A1/en not_active Withdrawn
-
1982
- 1982-11-12 ES ES517344A patent/ES8307920A1/en not_active Expired
- 1982-11-18 FR FR8219304A patent/FR2516944B1/en not_active Expired
- 1982-11-19 IT IT49538/82A patent/IT1148484B/en active
Non-Patent Citations (1)
| Title |
|---|
| NICHTS ERMITTELT * |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1148484B (en) | 1986-12-03 |
| FR2516944A1 (en) | 1983-05-27 |
| ES517344A0 (en) | 1983-08-16 |
| IT8249538A0 (en) | 1982-11-19 |
| FR2516944B1 (en) | 1986-08-14 |
| ES8307920A1 (en) | 1983-08-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8127 | New person/name/address of the applicant |
Owner name: MAN TECHNOLOGIE GMBH, 8000 MUENCHEN, DE RUHRCHEMIE |
|
| 8110 | Request for examination paragraph 44 | ||
| 8136 | Disposal/non-payment of the fee for publication/grant |