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DE2214197C3 - Verfahren zum Ätzen von PN-Übergänge enthaltenden Halbleiterscheiben - Google Patents

Verfahren zum Ätzen von PN-Übergänge enthaltenden Halbleiterscheiben

Info

Publication number
DE2214197C3
DE2214197C3 DE19722214197 DE2214197A DE2214197C3 DE 2214197 C3 DE2214197 C3 DE 2214197C3 DE 19722214197 DE19722214197 DE 19722214197 DE 2214197 A DE2214197 A DE 2214197A DE 2214197 C3 DE2214197 C3 DE 2214197C3
Authority
DE
Germany
Prior art keywords
etching
semiconductor wafers
solution
junctions
etching solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19722214197
Other languages
German (de)
English (en)
Other versions
DE2214197B2 (de
DE2214197A1 (de
Inventor
Reimer Dipl.-Phys. Dr. 8000 Muenchen Emeis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19722214197 priority Critical patent/DE2214197C3/de
Priority to CH1742472A priority patent/CH575175A5/xx
Priority to AT1017072A priority patent/AT325678B/de
Priority to ES409621A priority patent/ES409621A1/es
Priority to IT3323272A priority patent/IT972618B/it
Priority to FR7245655A priority patent/FR2176664B1/fr
Priority to NL7217673A priority patent/NL7217673A/xx
Priority to GB380173A priority patent/GB1362507A/en
Priority to JP3304473A priority patent/JPS525230B2/ja
Priority to BE129187A priority patent/BE797244A/xx
Priority to SE7304136A priority patent/SE378478B/xx
Publication of DE2214197A1 publication Critical patent/DE2214197A1/de
Publication of DE2214197B2 publication Critical patent/DE2214197B2/de
Application granted granted Critical
Publication of DE2214197C3 publication Critical patent/DE2214197C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Thyristors (AREA)
DE19722214197 1972-03-23 1972-03-23 Verfahren zum Ätzen von PN-Übergänge enthaltenden Halbleiterscheiben Expired DE2214197C3 (de)

Priority Applications (11)

Application Number Priority Date Filing Date Title
DE19722214197 DE2214197C3 (de) 1972-03-23 1972-03-23 Verfahren zum Ätzen von PN-Übergänge enthaltenden Halbleiterscheiben
CH1742472A CH575175A5 (zh) 1972-03-23 1972-11-29
AT1017072A AT325678B (de) 1972-03-23 1972-11-29 Verfahren zum alkalischen ätzen von mit pn-übergängen versehenen halbleiteranordnungen
ES409621A ES409621A1 (es) 1972-03-23 1972-12-14 Procedimiento para la corrosion alcalina de sistemas semi- conductores.
IT3323272A IT972618B (it) 1972-03-23 1972-12-20 Procedimento per l attacco chimi co alcalino di sistemi a semicon duttori
FR7245655A FR2176664B1 (zh) 1972-03-23 1972-12-21
NL7217673A NL7217673A (zh) 1972-03-23 1972-12-27
GB380173A GB1362507A (en) 1972-03-23 1973-01-25 Alkaline etching of semiconductor bodies
JP3304473A JPS525230B2 (zh) 1972-03-23 1973-03-22
BE129187A BE797244A (fr) 1972-03-23 1973-03-23 Procede de decapage alcalin de systemes semi-conducteurs
SE7304136A SE378478B (zh) 1972-03-23 1973-03-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722214197 DE2214197C3 (de) 1972-03-23 1972-03-23 Verfahren zum Ätzen von PN-Übergänge enthaltenden Halbleiterscheiben

Publications (3)

Publication Number Publication Date
DE2214197A1 DE2214197A1 (de) 1973-09-27
DE2214197B2 DE2214197B2 (de) 1981-04-23
DE2214197C3 true DE2214197C3 (de) 1982-01-14

Family

ID=5839938

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722214197 Expired DE2214197C3 (de) 1972-03-23 1972-03-23 Verfahren zum Ätzen von PN-Übergänge enthaltenden Halbleiterscheiben

Country Status (11)

Country Link
JP (1) JPS525230B2 (zh)
AT (1) AT325678B (zh)
BE (1) BE797244A (zh)
CH (1) CH575175A5 (zh)
DE (1) DE2214197C3 (zh)
ES (1) ES409621A1 (zh)
FR (1) FR2176664B1 (zh)
GB (1) GB1362507A (zh)
IT (1) IT972618B (zh)
NL (1) NL7217673A (zh)
SE (1) SE378478B (zh)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB889872A (en) * 1957-04-24 1962-02-21 Sarkes Tarzian A method of treating a semi-conductor device
FR1266612A (fr) * 1960-06-02 1961-07-17 Solutions d'attaque chimiques pour le traitement en surface des matériaux semiconducteurs
NL271850A (zh) * 1961-02-03
GB980513A (en) * 1961-11-17 1965-01-13 Licentia Gmbh Improvements relating to the use of silicon in semi-conductor devices
DE1621511A1 (de) * 1967-04-01 1970-07-23 Siemens Ag Verfahren zum Entspiegeln von Siliziumeinkristalloberflaechen

Also Published As

Publication number Publication date
NL7217673A (zh) 1973-09-25
FR2176664B1 (zh) 1977-12-30
AT325678B (de) 1975-11-10
JPS4915371A (zh) 1974-02-09
JPS525230B2 (zh) 1977-02-10
FR2176664A1 (zh) 1973-11-02
DE2214197B2 (de) 1981-04-23
DE2214197A1 (de) 1973-09-27
BE797244A (fr) 1973-07-16
ES409621A1 (es) 1975-12-01
ATA1017072A (de) 1975-01-15
GB1362507A (en) 1974-08-07
SE378478B (zh) 1975-09-01
IT972618B (it) 1974-05-31
CH575175A5 (zh) 1976-04-30

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Legal Events

Date Code Title Description
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee