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DE1992603U - HOUSING WITH DIODES. - Google Patents

HOUSING WITH DIODES.

Info

Publication number
DE1992603U
DE1992603U DEA28690U DEA0028690U DE1992603U DE 1992603 U DE1992603 U DE 1992603U DE A28690 U DEA28690 U DE A28690U DE A0028690 U DEA0028690 U DE A0028690U DE 1992603 U DE1992603 U DE 1992603U
Authority
DE
Germany
Prior art keywords
diodes
assembly
housing
parts
resilient parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEA28690U
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of DE1992603U publication Critical patent/DE1992603U/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Sheets, Magazines, And Separation Thereof (AREA)

Description

• 79/67• 79/67

Aktiengesellschaft Brown, Boveri & Cie., Baden (Schweiz)Public limited company Brown, Boveri & Cie., Baden (Switzerland)

Zusammenbau mehrerer Dioden in einem GehäuseAssembly of several diodes in one housing

Die fe»ii»a«Rg betrifft den Zusammenbau mehrerer Halbleiter-Dioden in einem Gehäuse. Wenn mehrere Dioden in Reihe verwendet werden* so hat man bisher jede einzeln ausgeführt und sie in der verlangten Weise elektrisch zusammengeschaltet. Dies erfordert viel Platz und zusätzliche elektrische Verbindungsleitungen. Beim Zusammenbau mehrerer in Reihe geschalteter Dioden muss auf eine gute Kontaktgäbe geachtet werden.The fe »ii» a «Rg concerns the assembly of several semiconductor diodes in one housing. If several diodes are used in series * see above so far each has been carried out individually and electrically interconnected in the required manner. This requires a lot of space and additional electrical connection lines. When assembling several diodes connected in series must make good contact be respected.

wird daher vorgeschlagen, dass die Dioden in Reiheit is therefore suggested that the diodes be in series

geschaltet sind, dass federnde Teil© vorgesehen sind, die die Dioden zusammenhalten, dass Kontaktscheiben an den Dioden angebracht welche die elektrische Verbindung zwischen den Dioden oder Diode und Zuleitung bilden* dass das Gehäuse die Diodenteile mit den Scheiben und federnden Teilen zusammenhält.are connected that resilient part © are provided that the diodes hold together that contact washers attached to the diodes which form the electrical connection between the diodes or diode and supply line * that the housing, the diode parts with the Holds washers and resilient parts together.

- a - ζ 79/β?- a - ζ 79 / β?

Die Figuren 1 und 2 zeigen Ausführungsbeispiele der In beiden Figuren sind die dioden entgegengesetzt in Beine geschaltet und als sogenannte.Avalanche - Dioden ausgeführt» Dies sind Dioden» welche in Sperrichtung von einer bestimmten Spannungshöhe an leitend werden. Die Anordnung kann beispielsweise als tjeberspännungsschutz für andere Geräte wie Thyristoren dienen. Mit (1) sind die Halbleiterscheiben bezeichnet, die an der Anodenseite (Innenseite) über nicht angedeuteten Molybdänschichten mit einer Hartlotschicht (2) miteinander verbunden sind. An den äusseren Seiten der Halbleiterscheiben (I), also den Kathodenseiten, sind weitere kotscheiben' 0) vorgesehen und mit den Molybdänschichten (4) verlötet» Diese wiederum sind mit den tellerförmigen federnden Teilen (6) durch die Hartlotschicht (5) verlötet. An den federnden Teilen (6) sind die Anschiussfahnen (7) be* festigt. Das Ganze wird in einer Giessform mittels einer elastisch bleibenden wärmebeständigen, das Gehäuse bildenden Giessharzum· .. mantelung (8) eingebettet.Figures 1 and 2 show embodiments of the In both figures the diodes are connected in opposite directions in legs and designed as so-called avalanche diodes »These are diodes» which are conductive in the reverse direction from a certain voltage level will. The arrangement can be used, for example, as protection against stress serve for other devices like thyristors. (1) denotes the semiconductor wafers that are not on the anode side (inside) indicated molybdenum layers are connected to one another with a brazing layer (2). On the outer sides of the semiconductor wafers (I), so the cathode sides, further fecal disks' 0) are provided and soldered to the molybdenum layers (4) »These in turn are with the plate-shaped resilient parts (6) soldered through the brazing layer (5). The connection flags (7) are attached to the resilient parts (6). solidifies. The whole thing becomes elastic in a mold by means of a permanent heat-resistant cast resin that forms the housing .. cladding (8) embedded.

Figur 2 zeigt eine andere Ausführung. Darin werden die Halbleiterscheiben (1), die wieder zu entgegengesetzt in Reihe geschalteten Avalanehe-Dioden gehören, über die federnden Teile (6),41e also hier zwischen den Scheiben liegen und zugleich den Kontakt sichern sollen» und die Druckkörper (9)* an welchen wiederum weiche metallische Zwiahenlagen beispielsweise Zinnfolien (10) liegen, elektrisch miteinander verbunden. Auf der anderen Seite der Halbleiterscheiben (1) liegen weitere Metallschichten (11), die die Aussenseite der Halbleiterscheiben mit den metallischen Gehäuseteilen (12) .verbinden.Figure 2 shows another embodiment. This contains the semiconductor wafers (1), which are again connected in series in opposite directions Avalanehe diodes belong here, via the resilient parts (6), 41e should lie between the panes and at the same time ensure contact » and the pressure body (9) * on which in turn soft metallic intermediate layers for example tin foils (10) are electrically connected to one another. On the other side of the semiconductor wafers (1) lie further metal layers (11) which form the outside of the semiconductor wafers with the metallic housing parts (12).

Diese besitzen die Anschlusstücke (T), Die Anschlusstücke sind so ausgeführt, dass sie zugleich auch Wärme abführen können. Die beiden metallischen Gehäuseteile (12) liegen einander gegenüber und bilden mit den Isolierkörpern (13) das Gehäuse, Die Gehäuseteile (12) werden vorgespannt, so dass ein ausreichender Kontaktdruck entsteht und dann durch Einfüllen von Gas mit den Isolierteilen (1£) durch Umbördeln und gasdichtem Verlöten oder Verkitten verbunden.These have the connection pieces (T), the connection pieces are like this executed so that they can also dissipate heat at the same time. The two metallic housing parts (12) are opposite each other and form with the insulators (13) the housing, the housing parts (12) preloaded so that there is sufficient contact pressure and then through filling with gas with the insulating parts (1 £) Flanging and gas-tight soldering or cementing connected.

Man erhält auf diese Weise einen Bauteil mit mehreren Dioden,, der gegenüber äusseren Einflüssen unempfindlich ist und wenig Platz beansprucht., Ausserdem können·in einfacher Weise mehrere solcher Bau* teile hintereinander zusammengebaut werden.In this way, a component with several diodes is obtained is insensitive to external influences and takes up little space., In addition, several such structures * parts are assembled one behind the other.

Claims (8)

X,"tz~ ft a~t ο ■·% a ns'prüche,:X, "tz ~ ft a ~ t ο ■ ·% a ns'prüche ,: 1. Zusammenbau mehrerer Halbleiterdioden in einem Gehäuse, dadurch gekennzeichnet, dass die Dioden in leihe geschaltet sind, dass · federnde Teile vorgesehen sind, die die Dioden zusammenhalten, dass Kontaktseheiben an den Dioden angebracht sind, welche die elektrische Verbindung zwischen den Dioden oder zwischen Dioden und Zuleitungen bilden, da.ss das Gehäuse.die Diodenteile mit den Scheiben und federnden Teilen zusammenhält.1. Assembly of several semiconductor diodes in one housing, thereby characterized in that the diodes are connected in series, that resilient parts are provided that hold the diodes together, that contact washers are attached to the diodes, which the electrical connection between the diodes or between diodes and leads form, da.ss the housing.die diode parts with the Holds washers and resilient parts together. 2. Zusammenbau von Dioden nach Anspruch 1, dadurch gekennzeichnet, dass die federnden Teile tellerförmig ausgebildet sind*2. assembly of diodes according to claim 1, characterized in that that the resilient parts are plate-shaped * 3. Zusammenbau von Dioden nach Anspruch 1, dadurch gekennzeichnet, dass die federnden Teile zwischen den beiden Dioden liegen,3. assembly of diodes according to claim 1, characterized in that that the resilient parts are between the two diodes, 4. Zusammenbau von Dioden nach Anspruch 3, dadurch gekennzeichnet, dass das Gehäuse auf der einen Seite und auf der ihr gegenüberliegenden Seite aus gebogenem Kupferblech und die beiden anderen Seiten aus Isolierenden Feststoffen bestehen und dass das Gehäuse gasdicht ausgeführt ist.4. assembly of diodes according to claim 3, characterized in that that the housing on one side and on the opposite side Side made of bent copper sheet and the other two sides made of insulating solids and that the housing is made gas-tight. 5· Zusammenbau von Dioden nach Anspruch 1, dadurch gekennzeichnet, dass das Gehäuse aus .einer Giessharzummantelung gebildet wird, die sich fest an die Bauteile der Dioden ansehliesst.5 assembly of diodes according to claim 1, characterized in that that the housing is made of a cast resin coating, which is firmly attached to the components of the diodes. 6. Zusammenbau mehrerer Halbleiterdioden nach Anspruch 5, da -τ durch gekennzeichnet, dass das Giessharz elastisch 1st»6. assembly of several semiconductor diodes according to claim 5, since -τ characterized in that the casting resin is elastic » 7» Zusammenbau von Halbleiterdioden nach Anspruch 1, dadurch gekennzeichnet, dass die federnden Teile mit den Halbleiterteilen verlötet sind. 7 »Assembly of semiconductor diodes according to claim 1, characterized in that the resilient parts are soldered to the semiconductor parts. 8. Zusammenbau mehrerer Halbleiterdioden nach Anspruch 1, dadurch gekennzeichnet, dass die Dioden entgegengesetzt in Reihe geschaltet sind und Avalanche-Dioden sind.8. assembly of several semiconductor diodes according to claim 1, characterized in that the diodes are opposite in Are connected in series and are avalanche diodes. Aktiengesellschaft BHOMN, BOYERI & CIE.Joint stock company BHOMN, BOYERI & CIE.
DEA28690U 1967-10-20 1967-11-10 HOUSING WITH DIODES. Expired DE1992603U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1473967A CH465064A (en) 1967-10-20 1967-10-20 Arrangement with several semiconductor diodes in one housing

Publications (1)

Publication Number Publication Date
DE1992603U true DE1992603U (en) 1968-08-29

Family

ID=4403448

Family Applications (1)

Application Number Title Priority Date Filing Date
DEA28690U Expired DE1992603U (en) 1967-10-20 1967-11-10 HOUSING WITH DIODES.

Country Status (6)

Country Link
CH (1) CH465064A (en)
DE (1) DE1992603U (en)
FR (1) FR1587132A (en)
GB (1) GB1172940A (en)
NL (1) NL159233B (en)
SE (1) SE351520B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH533362A (en) * 1971-06-25 1973-01-31 Bbc Brown Boveri & Cie Semiconductor component
JPS6194362A (en) * 1984-10-15 1986-05-13 Mitsubishi Electric Corp Thyristor device
US4939619A (en) * 1987-01-26 1990-07-03 Northern Telecom Limited Packaged solid-state surge protector

Also Published As

Publication number Publication date
SE351520B (en) 1972-11-27
FR1587132A (en) 1970-03-13
NL159233B (en) 1979-01-15
NL6814894A (en) 1969-04-22
CH465064A (en) 1968-11-15
GB1172940A (en) 1969-12-03

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