DE19717368A1 - Wire bonding system for semiconductor component - Google Patents

Abstract

The component contains a semiconductor element (1) coupled to a connecting frame (4) by a chip bonding material, and a metal wire (3a) connecting the frame to the semiconductor element. A bonding point between a contact spot (2) on the element a metal wire has a number of island-shaped bonding points, and a strip-shaped coupling point, surrounding the bonding point. Preferably the frame is of Cu as its main component, while the main component of the chip bonding material. The main component of the metal wire is Au, and that of the contact spot is Al.

Description

The present invention relates to a wire bonding process or wire contacting process to improve reliability liquid bonding or bond connection with fine Wire, a wire bonding device as well as using one the wire bonding method and the wire bonding device formed semiconductor device.

So far, a method has been widely used in the construction process of semiconductor devices, which uses both a thermocompression bonding method and a method using ultrasonic vibration as a method for bonding a metal wire to a bond pad or a pad on a semiconductor device. In order to meet the trend of the past few years in terms of reducing the size and spacing of the contact pad, there is a need to create the wire bonding method for maintaining the bonding with greater reliability. Fig. 24 shows a relationship between the load and the time history of the applied ultrasonic vibration and the bonding time in the wire bonding method shown in Japanese Unexamined Patent Application No. 279 040/1992, for example. According to the embodiment, a multi-stage load is added by such an application of a low load A between the high load and the low load B that the low load A is lighter than the low load B. The application of ultrasonic vibration is started at the time of high stress.

As described above, the bond load amount is according to the conventional wire bonding process during the period from Contact the metal wire with the pad up to the Constant time at which the ultrasonic vibration is applied  becomes. Because of this, problems have arisen that the deformation of the metal wire becomes excessive if the amount of load at such a time to a high amount of such a degree is set that bond cores are formed while, on the other hand, the bond cores are not can be trained sufficiently if the deformation quantity at a low level of such a degree is that the amount of deformation is suppressed can. Since the ultrasonic vibration continues to be selected When the load application is applied, the slope for excessive deformation of the metal wire accelerated, so that the problem arose that the out formation of a bond with fine wire becomes impossible.

The present invention is based on the object Solve the problems described above and a wire bond process and to create a wire bonding device, wherein the bond core at the junction between the metal wire and the pad is sufficiently formed and the amount of deformation of the metal wire to a moderate Ni veau can be set so that the reliability ei ner bond connection is improved with fine wire, as well using the above method and apparatus a high quality semiconductor device with high reliability ger bond connection.

This object is achieved by the provision a semiconductor device with a semiconductor element, ei nem to the semiconductor element with a chip connection material connected lead frame and a metal wire solved the semiconductor element and the lead frame electrically connects, with a junction between the pad attached to the semiconductor element and the metal wire a variety of island-shaped connection and the entire island-shaped connection point len surrounding band-shaped connection point.  

The lead frame also contains copper as a main compo and the chip connecting material resin as a main component.

The metal wire also contains gold as a main compo and the aluminum contact pad as a main component te.

According to the invention, a wire bonding method for Ver Binding a metal wire to one on a semiconductor element arranged contact pad using a Be load and ultrasonic vibration for a period of time from the contact of the metal wire with the pad to the contact application of ultrasonic vibration through a continuous Apply a first bond load and a second bond load that is less than the first bond load, and one continuously after using the ultrasonic vibration Liche application of a compared to the second bond load et wa 50% third bond load and a fourth bond load provided less than the first Bondbela and greater than the third bond load.

Likewise, the metal wire has an end section or spit area of the metal wire to ver with the contact patch binding metal ball.

The bond load quantity divided by the cross-sectional area before the deformation of the metal ball becomes 392.10⁻ ⁶ to 589.10⁻ ⁶ N / µm ² (40 to 60 mgf / µm ² ) at the time of the first bond load, and 98.10⁻ ⁶ at the time of the second bond load up to 196.10⁻ ⁶ N / µm ² (10 to 20 mgf / µm ² ), at the time of the third bond load to 39.10⁻ ⁶ to 98.10⁻ ⁶ N / µm ² (4 to 10 mgf / µm ² ) and at the time of the fourth bond load set to 98.10⁻ ⁶ to 196.10⁻ ⁶ N / µm ² (10 to 20 mgf / µm ² ).

Furthermore, the time course of the first bond load is not more than 3 ms, the time course of the third bond load is 5 to 15 ms and the time course of the fourth bond load is 1 to 5 ms.

According to the invention, a wire bonding device for connecting a metal wire to a contact pad arranged on a semiconductor element using a load and ultrasonic vibration with an object table for attaching a semiconductor device comprising the semiconductor device, a bonding head for positioning the metal wire on the contact pad, the metal wire ( 3 a) is maintained, and for the application of a load and ultrasonic vibration, a monitoring mechanism for the temporal change in the load quantity of the bondhead as well as a mechanism for load control and an ultrasound amplitude control mechanism with a conversion function or conversion table created to the interaction between the temporal Changes in the load quantity and the strength and deformation of the connection point aufzei gene, as well as to calculate a subsequent load quantity and amplitude of the ultrasonic vibration based on the result received from the monitoring mechanism to control the bond head.

The invention is described below with reference to exemplary embodiments len with reference to the accompanying drawing ben. Show it:

Fig. 1 (a) and 1 (b) a structure of a semiconductor device illustrating a wire bonding method according to a first embodiment of the invention, wherein Fig. 1 (a) is a side view, and FIG. 1 (b) is a fragmentary cross-sectional view illustrating the connecting region,

Fig. 2 sonic vibration is a view showing the relationship between load and the time course of the applied ultra as well as a connection time in the wire bonding method according to the first example of execution according to the invention,

Fig. 3 is a view of the connection condition from the first operation example according to the application of the third load at a temperature of 210 ° C,

Fig. 4 is a view of the connection condition from the first operation example according to the application of the third load at a temperature of 230 ° C,

Fig. 5 is a view of the connection condition from the first operation example according to the application of the third load at a temperature of 250 ° C,

Fig. 6 is a view of the connection condition from the first operation example according to the application of the third load at a temperature of 280 ° C,

Fig. 7 is a view of the connection condition from the first operation example according to the application of the third load at a temperature of 210 ° C in the case that the ultrasonic amplitude is decreased by 40%,

Fig. 8 is a view of the connection condition from the first operation example according to the application of the third load at a temperature of 280 ° C in the case that the ultrasonic lamplitude is reduced by 40%,

Fig. 9 is a view of the connection condition from the first operation example according to the application of the third load at a temperature of 210 ° C in the case that the timing of the third load is 3 ms,

Fig. 10 is a view of the connection condition in the first embodiment according to the application of the third load at a temperature of 210 ° C in the case that the zeitli che course of the third load is 5 ms,

Fig. 11 is a view of the connection condition in the first embodiment according to the application of the third load at a temperature of 210 ° C in the case that the zeitli che course of the third load is 10 ms,

Fig. 12 is a view of the connection condition in the first embodiment according to the application of the third load at a temperature of 210 ° C in the case that the zeitli che course of the third load is 30 ms,

Fig. 13 is a view of the connection condition in the first embodiment according to the application of the third load at a temperature of 210 ° C in the case that the zeitli che course of the third load is 50 ms,

Fig. 14 is a view of the connection condition in the first embodiment according to the application of the third load in the event that the first load on 981.10⁻ ³ N is reduced (100 gf) and the second load on 294.10⁻ ³ N (30 gf),

Fig. 15 is a view of the connection condition in the first embodiment according to the application of the third load in the case that the third load on 294.10⁻ ³ N is increased (30 gf),

Fig. 16 is a view of the connection condition in the case where the 210 ° C sample shown in Fig. 3 is kept at a temperature of 150 ° C for 15 hours.

Fig. 17 is a view of the connection condition in the case where the 280 ° C sample shown in Fig. 3 is kept at a temperature of 150 ° C for 15 hours.

Fig. 18 is a view of the connection condition to the application of the fourth load by wire bonding method according to the first embodiment of the invention,

Fig. 19 is a view of a connection condition of Fig. 18,

Shows a view of the connection condition management, for example. 20 by a wire bonding method according to a second inventive Off

Fig. 21 is a view of the connection condition management, for example by the wire bonding method according to the second invention Off

Fig. Lastungsanwendung 22 is a view of the relationship between the time of loading and guide for the formation conditions of the interme-metallic compound at the junction with a wire bonding method according to the third invention Off

Fig. 23 is a structural view of a wire bonding apparatus according to a fourth embodiment of the invention and

Fig. 24 is a view showing the relationship between the load and the time course of the applied ultrasonic vibration as well as the connection time in the conventional wire bonding method.

Embodiment 1

The first exemplary embodiment according to the invention is described below with reference to the drawing. Fig. 1 (a) shows a side view of the structure of the semiconductor device for illustrating the wire bonding method according to the first embodiment of the present invention, and Fig. 1 (b) shows a partial cross-sectional view of the connection area. Further, FIG. 2 is a view showing the relation ship between the load and the time profile of the applied ultrasonic vibration as well as a connection time in the wire bonding method according to the embodiment. In the drawing, each reference numeral 1 denotes a semiconductor element, 2 a is on the semiconductor element 1 mounted bond pad or pad, 3a a metal wire 3b is a a lead frame at the top or at the end of the metal wire 3 a ausgebil finished metal ball, 4, 5 a chip connec tion material for connecting the semiconductor element 1 to the lead frame 4 and 8 a capillary.

In this embodiment, the semiconductor element 1 is mechanically and electrically connected to the mainly copper lead frame 4 using a chip bonding material 5 mainly composed of polyimide and epoxy resin which has phenol as a hardening agent and which is filled with silver powder. The following explanation is given in the event that a metal wire 3 a has mainly gold with a diameter of 30 microns and a metal ball 3 b of about 55 microns in diameter, which is ent by melting and solidification of the end of the metal wire 3 a, and with a mainly aluminum and formed on a semiconductor element 1 contact patch 2 of 80 microns on one side using the load and the ultrasound energy supplied via the capillary 8 of about 60 kHz and from the lower surface of the semiconductor element 1 heat is joined or connected . FIGS. 3 to 19 show views for illustrating the Ausbil-making conditions of the intermetallic compounds at the joint portion between the metal ball 3 b and the con tact stain. 2 In Fig. 19, reference numeral 6 denotes a one serving for connection as a starting point link core, 6b an island-shaped junction and 7, a band-shaped joint which is formed so as to surround the entire joint 6 b. Furthermore, in each of FIGS. 3 to 18 and FIGS. 20 and 21 the upper figure (a), the figure on the left in the middle (b), the figure on the right in the middle (c) and the lower figure (d) each have a typical connection area on the upper side, a typical connection area on the middle left side, a typical connection area on the middle right side and a typical connection area on the lower side of a rectangular semiconductor device. In FIGS. 3 through 18 and Fig. 20 and 21 show whitish or gray portions in about the middle of the figures (see. Fig. 19) binding sites island-shaped Verbin.

First, after the contact of the metal ball 3 b with the contact spot 2, the first amount of bond load with a strong gradient to about 1.177 N (120 gf) is applied to generate a mutually abrupt plastic flow on a connection interface between the metal wire 3 a and the contact spot 2 . The strong loading increase gra serves can be realized by the downward movement of the capillary 8 at high speed. Due to this plastic flow, it is possible to exclude a local oxide film and the same on the material surface only by loading without the supply of sliding or frictional energy at the contact interface and form a connection core 6 a at the contact interface, which is the starting point the junction. In such a case, the surface of the contact pad 2 can be provided with a jump of a few μm to simplify the formation of the connecting core 6 a. A method for growing an aluminum single crystal projection can be used to form the lead, for example, by subjecting the contact pad 2 to a heat treatment.

Thereafter, until the ultrasonic vibration is applied, the second amount of bond load is controlled to a small amount of about 392.10⁻ ³ N (40 gf), at which the vibrations of the sound funnel holding the upper portion of the capillary 8 can be suppressed. Through this step, the contact between the metal ball 3 b and the contact spot 2 at the connection region 6 a is secured and recontamination of the surface of the connection core 6 a by oxidation and the like can be suppressed.

Thereafter, at the time the ultrasonic vibration is applied, the third bond load in the range of about 98.10 ^-3 to 196.10 ^-3 N (10 to 20 gf) is applied for a period of about 10 ms to the energy of the ultrasonic vibration in the range of no more than a few microns in the vicinity of each connecting core 6 a concentrated use, whereby the suppression of further vibrations at the contact interface between the metal ball 3 b and the contact pad 2 and a uniform growth of several island-shaped connection places 6 b with an approximately elliptical shape in the center on the connecting core 6 a is made possible. FIGS. 3 to 6 show loading conditions of the joints in the cases that the application to the first takes place through the third bonding load amounts at the respective bonding temperatures of 210, 230, 250 and 280 ° C. The size of the island-shaped junction 6 b to be trained is variable in accordance with the connection temperature. In the temperature range of the present experiment, there is a tendency that the lower the temperature, the smaller the individual sizes of the self-shaped connection points 6 b. Furthermore, even at 210 ° C, the island-shaped junction 6 b is sufficiently formed.

FIGS. 7 and 8 show the cases in which amplitudes of the Ul traschallvibration at the bonding temperatures of 210 ° C and 280 ° C can be reduced by 40%, the other loading conditions at the same level as in the samples of FIG. 3 to 6 being held. In a comparison of the two cases, it becomes apparent that in the cases with the larger amplitude of the ultrasonic vibration (cf. FIGS. 3 to 6) the island-shaped connection point 6 b has a large size. Also show

FIGS. 9 through 13, the cases in which the timing of the third bonding load at 210 ° C for 3, 5, 10, 30 and 60 ms was changed, is illustrated thereby, that increases the longer the time course, the greater the inselför shaped junction 6 b. As shown in Fig. 3 to 13, the individual size of the island-shaped junction 6 b can also be controlled by the amplitude of the ultrasonic vibration and the time course of the third bond load.

Fig. 14 shows a view of the connection condition in the event that the first bond load and the second bond load are reduced to 981.10⁻ ³ N (100 gf) and 294.10⁻ ³ N (30 gf), respectively, and the third bond load in the range of 98.10 ⁻ ³ to 196.10⁻ ³ N (10 to 20 gf) is used. Even in such a case, the island-shaped connection point 6 b is formed. However, as shown in Fig. 15, if the first bond load is reset to 1.177 N (120 gf) and the second bond load is reset to 392.10⁻ ³ N (40 gf) and the third bond load is increased to 294.10⁻ ³ N (30 gf), the bond is increased it is impossible to deliver enough ultrasonic energy to the surroundings of the connecting core 6 a, whereby an insufficient connection is created. Furthermore, FIGS. 16 and 17 show views of the conditions in the case where the samples having the connection temperatures of 210 ° C. and 280 ° C. as shown in FIG. 3 are kept at 150 ° C. for 15 hours, the self-shaped junction 6 b could be observed even after storage at a high temperature.

Furthermore, in the last stage, the fourth bond load is applied for 3 to 5 ms with a high amount of about 245.10⁻ ³ N to 392.10⁻ ³ N (25 to 40 gf) to the energy of the ultrasonic vibration in the outer region of the connection point of the metal ball 3rd b concentrated use, causing plastic deformations of the metal ball 3 b and the contact pad 2 in the outer region of the metal ball 3 b, and the band-shaped connection point 7 as shown in FIGS . 16 to 19 Darge can be designed such that it the entire variety surrounds island-shaped junctions 6 b.

In the above explanation, the first shown in the present embodiment to fourth bonding Bela stungsmengen the amounts which are applicable of approximately 55 microns diameter on a one end of a Me talldrahts 3 a trained with 30 micron diameter metal ball 3 b, and in the case that the size of the metal ball 3 b differs, a change in the amount of Bondbela is required. That is, by making the amount obtained by dividing the bond load amount by the cross-sectional area before the deformation of the metal ball 3 b at the time of the first bond load to 392.10⁻ ⁶ to 491.10⁻ ⁶ N / µm ² (40 to 50 mgf / µm ² ), at the time of the second bond load to 98.10⁻ ⁶ to 196.10⁻ ⁶ N / µm ² (10 to 20 mgf / µm ² ), at the time of the third bond load to 39.10⁻ ⁶ to 98.10⁻ ⁶ N / µm ² (4 to 10 mgf / µm ² ) and at the time of the fourth bond loading to 98.10⁻ ⁶ to 196.10⁻ ⁶ N / µm ² (10 to 20 mgf / µm ² ), a connection with a large number of island-shaped connection points 6 b and one the whole of the island-shaped connection points 6 b surrounding band-shaped connection point 7 in the same manner as in this embodiment. In this way, it becomes possible to perform highly reliable wire bonding. In such a case, the time course of the first bond load is not more than 3 ms, the time course of the third bond load is 5 to 15 ms and the time course of the fourth bond load is 1 to 5 ms.

In this embodiment, a chip material consisting of polyimide and epoxy resin as the main material is used, which has phenol as a curing agent and
that is filled with silver powder. However, the components of the resin material should not be limited.

As described above, according to the wire bond process according to the present embodiment, the Ver connecting core 6 a at the connection point between the metal ball 3 b and the contact pad 2 is sufficiently formed. The amount of deformation of the metal ball 3 b can be adjusted precisely. It is possible to noticeably improve the reliability of the bond assemblies or bond connections with fine wire, such as, for example, in plastic housings with fine field spacing and multiple connections, and to create the semiconductor device with high quality at low cost.

Embodiment 2

The wire bonding method according to the second embodiment of the present invention is described below. Since the construction of the semiconductor device to be used in this embodiment is the same as that of the first embodiment, reference is made to FIGS . 1 and 2 in the following explanation. A semiconductor element 1 is connected using a solder as the main component, the chip connection material 5 is connected to a lead frame 4 consisting mainly of iron and nickel. The following explanation is given in the event that a metal wire 3 a consisting mainly of gold with a diameter of 30 μm and a metal ball 3 b formed by melting and solidifying the end of the metal wire 3 a of approximately 55 μm diameter with a mainly aluminum pointing and formed on a semiconductor element 1 pad 2 of 80 microns on a side using the load and the supplied via the capillary tube 8 ultrasound energy of 60 kHz and the surface of the lower top of the semiconductor element is connected to one heat supplied.

As in this embodiment, in the case where the chip connecting material 5 is a solder, such a material has an elasticity module about one size larger than that of the resin, so that it has a high transmission efficiency of the ultrasonic waves. Because of this, the band-shaped connection point 7 (see FIG. 19) is formed more easily by the deformation of the metal ball 3 b with less ultrasound energy even under the same temperature conditions than in the case of the resin-chip connection material. Accordingly, by suppressing the amplitude of the ultrasonic vibration at the time course of the third bond load to approximately 60% of the case that the connection frame 4, as shown in the first exemplary embodiment, contains mainly copper, the formation of the island-shaped connection point 6 b (see FIG. 19) as shown in FIGS. 20 and 21 over the entire connection surface. In this embodiment, the connection temperatures of 210 ° C (see FIG. 20) and 280 ° C (see FIG. 21) make the size of the respective island-shaped connection points 6 b small at a low temperature. Then, by applying the fourth bond load in the same manner as in the case of embodiment 1, the band-shaped connection point 7 is formed such that it surrounds the entire plurality of island-shaped connection points 6 b. Fer ner remains the shape of the joint even after storage at a high temperature such as in the first embodiment.

In the first and second embodiments described above, each of the first to fourth bond load amounts can be further finely divided in the frame described in the explanation of the bond load amount to generate the optional or desired waveforms. While the frequency of the ultrasonic vibration is specified at approximately 60 kHz, the frequency can also be approximately several hundred kHz. It is also possible to change the frequency and amplitude in a connection training period. While the case was taken as an example in which the gold as the main component material wire 3 a is connected to the aluminum as the main component contact pad 2 , such metals as gold, silver, copper, aluminum and platinum, their alloys and compounds as Ma material for the metal wire 3 a and the contact pad 2 are used. Furthermore, the wire diameter of the metal wire and the size of the contact spot are not limited. In the above described first and second Ausführungsbei play a bonding technique of connecting the metal ball 3 b is connected to the land 2 according to the described by melting and solidification of the end of the metal wire 3 a forming the taking place Me tallkugel 3 b. However, the present inven tion is also applicable to a wedge bonding technique or wedge bonding technique for direct connection of the metal wire 3 a with the contact spot 2 . It is also applicable to the connection at room temperature.

Embodiment 3

The wire bonding method according to the third embodiment of the present invention is described below. This exemplary embodiment is used to control the ratio of a band-shaped connection point 7 to the multiplicity of elliptical island-shaped connection points 6 b, which accordingly corresponds to the connectivity of the contact patch 2 as shown in FIGS. 1, 2 and 22 at an interface between a metal ball 3 b and one Pad 2 are formed. The control of the ratio can be realized by setting the third and fourth bond loads and the time course of the applied ultrasonic vibration. For example, in the case where the pad is thin, the connection can be achieved by increasing the ratio of the time history of the third bond load, as shown in Fig. 22 (a), without excluding the pad 2 by a large amount of plastic deformation cause. The ratio of the island-shaped connec tion point 6 b is larger in cross section and that of the band-shaped connection point 7 is smaller. If the ratio of the time course of the fourth bond load is increased as shown in FIG. 22 (b), a connection to the contact spot 2 with a low connection capacity can be achieved using the large amount of plastic deformation. The ratio of the island-shaped connection point 6 b is smaller in its cross section and that of the band-shaped connection point 7 is larger.

Embodiment 4

Fig. 23 is a view showing the structure of the wire bonding device according to the fourth exemplary embodiment from the invention. The present device is a device for connecting a metal wire to a pad attached to the semiconductor element using a load and ultrasonic vibration. Through a (not shown) stage for positioning a semiconductor device with a semiconductor element and a lead frame for positioning the metal wire on the contact pad of the semiconductor element, a bondhead 11 with a metal wire holder, a monitoring mechanism 12 of the load profile for monitoring the load profile of the bondhead 11 , a conversion function or a conversion table 13 to show the interaction between the load profile and the strength and the amount of deformation of the wire bond, a mechanism 14 for load control and an ultrasonic amplitude control mechanism 15 for calculating the subsequent load amount and the amplitude of the ultrasonic vibration based on that from the monitoring Mechanism 12 received result shown to control the bondhead.

Operation processing of the wire bonding device according to this embodiment will be described below. This device has, as shown in Fig. 1, after the metal ball 3 b has come into contact with the contact pad 2 , a function for assessing the amount of formation of a connecting core 6 a (see FIG. 19) on the stage visibly increasing the first bond load with a strong gradient increase. With regard to the evaluation method, a load profile is measured using a load measuring device installed below the bond object table and, based on the load profile, reference is made to a conversion function or conversion table 13 representing the interaction between the load profile stored above and the amount of deformation and the connection strength, as well as a calculation for output of the results of the assessment. These reference and assessment results are transmitted to control the bondhead to a mechanism 14 for load control and an ultrasonic amplitude control mechanism 15 . At such a time, a monitoring mechanism of a diameter of the metal ball 3 b can be used at the same time to increase the assessment accuracy. For monitoring of the diameter of the metal ball 3 b b a monitoring of the captured to the formation timing of the metal ball 3 electrical energy can for example take place.

If the installation of a load measuring device is difficult, the monitoring results of the deformation rate of the metal ball 3 b can be used. A laser displacement measuring device can be used as the monitoring process of the deformation rate and can measure the displacement of the capillary without contact. In the event that the capillary displacement mechanism includes a displacement measurement mechanism such as an encoder, such means can be used to read the displacement rate. From such shift information and the conversion function or conversion table representing the interaction between the previously stored shift amount and the shift amount and the connection strength, a suitable third and fourth bond load amount and ultrasonic amplitude can subsequently be determined.

As described above, according to the invention wire bonding process and the wire bonding device by An application of the first to fourth bond load amounts during an optional duration the connection cores to the verb in area between the metal wire and the pad sufficiently trained and the amount of deformation of the Metal wire can be adjusted so that it is possible, the reliability of the bond connection with fei wire to improve to a remarkable degree as well a high quality semiconductor device at low cost to accomplish.

As described above, a wire bonding process for Connection of a metal wire to one on a semiconductor element arranged contact pad using a Be load and ultrasonic vibration for a period of time from the contact of the metal wire with the pad to the contact application of ultrasonic vibration through a continuous Apply a first bond load and a second bond load that is less than the first bond load, and one continuously after using the ultrasonic vibration  Liche application of a compared to the second bond load et wa 50% third bond load and a fourth bond load created less than the first bond load and is greater than the third bond load. The reliable speed of the bond with fine wire is reduced by one noteworthy degree improved, making a semiconductor device high quality at low cost can.

Claims (8)

1. Semiconductor device with a semiconductor element ( 1 ), a to the semiconductor element ( 1 ) with a CHip connec tion material ( 5 ) connected lead frame ( 4 ) and egg nem metal wire ( 3 a), the semiconductor element ( 1 ) and the lead frame ( 4 ) electrically connects, characterized by a connection point between the on the semiconductor element ( 1 ) attached contact pad ( 2 ) and the metal wire ( 3 a), which has a plurality of island-shaped connection points ( 6 b) and the entire island-shaped connection points ( 6 b ) surrounding band-shaped connection point ( 7 ). 2. A semiconductor device according to claim 1, characterized in that the lead frame ( 4 ) has copper as a main component and the chip connecting material ( 5 ) resin as a main component. 3. Semiconductor device according to one of claims 1 or 2, characterized in that the metal wire ( 3 a) gold as a main component and the contact pad ( 2 ) aluminum as a main component. 4. Wire bonding method for connecting a metal wire ( 3 a) with a contact spot ( 2 ) arranged on a semiconductor element ( 1 ) using a load and ultrasonic vibration, characterized by the steps:
continuously applying a first bond load and a second bond load, which is lower than the first bond load, during a period from the contact of the metal wire ( 3 a) with the contact pad ( 2 ) to the application of the ultrasonic vibration and
after applying the ultrasonic vibration, continuously applying a third bond load approximately 50% greater than the second bond load and a fourth bond load which is less than the first bond load and greater than the third bond load. 5. Wire bonding method according to claim 4, characterized in that the metal wire ( 3 a) at one end portion of the metal wire ( 3 a) with a contact pad ( 2 ) to be connected Me tallkugel ( 3 b). 6. Wire bonding method according to claim 5, characterized in that by the cross-sectional area before the deformation of the metal ball ( 3 b) divided bond load amount at the time of the most bond load to 392.10⁻ ⁶ to 589.10⁻ ⁶ N / µm ² , at the time of the second bond load is set to 98.10⁻ ⁶ to 196.10⁻ ⁶ N / µm ² , at the time of the third bond load to 39.10⁻ ⁶ to 98.10⁻ ⁶ N / µm ² and at the time of the fourth bond load to 98.10⁻ ⁶ to 196.10⁻ ⁶ N / µm ² . 7. Wire bonding method according to one of claims 4 to 6, characterized in that the time course of the first bond load is not more than 3 ms, the time course of the third bond load stung 5 to 15 ms and the time course of the fourth bond load 1 to 5 ms is. 8. wire bonding device for connecting a metal wire ( 3 a) with a on a semiconductor element ( 1 ) arranged contact pad ( 2 ) using a load and ultrasonic vibration, characterized by
an object table for attaching a semiconductor device comprising the semiconductor element ( 1 ),
a bonding head ( 11 ) for positioning the metal wire ( 3 a) on the contact pad ( 2 ), the metal wire ( 3 a) being held, and for applying a load and ultrasonic vibration,
a monitoring mechanism ( 12 ) of the temporal change in the load quantity of the bonding head ( 11 ) and
a mechanism ( 14 ) for load control and an ultrasonic amplitude control mechanism ( 15 ) with a conversion function or conversion table ( 13 ) to show the interaction between the change over time of the load quantity and the strength and deformation of the connection point, and for calculating a subsequent one Load amount and amplitude of the ultrasonic vibration based on the result received by the monitoring mechanism ( 12 ) to control the bonding head ( 11 ).