DE19615481A1 - Metallised ceramic electrical or electronic substrate - has convex curvature for elastic bending into tight contact with heat sink - Google Patents
Metallised ceramic electrical or electronic substrate - has convex curvature for elastic bending into tight contact with heat sinkInfo
- Publication number
- DE19615481A1 DE19615481A1 DE19615481A DE19615481A DE19615481A1 DE 19615481 A1 DE19615481 A1 DE 19615481A1 DE 19615481 A DE19615481 A DE 19615481A DE 19615481 A DE19615481 A DE 19615481A DE 19615481 A1 DE19615481 A1 DE 19615481A1
- Authority
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- Germany
- Prior art keywords
- substrate
- ceramic layer
- substrate according
- curvature
- metallization
- Prior art date
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09018—Rigid curved substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
Die Erfindung bezieht sich auf ein Metall-Keramik-Substrat gemäß Oberbegriff Patentanspruch 1.The invention relates to a metal-ceramic substrate according to the preamble of claim 1.
Aufgabe der Erfindung ist es, ein Metall-Keramik-Substrat aufzuzeigen, welches für elektrische oder elektronische Leistungsschaltkreise oder -module geeignet ist und eine verbesserte Wärmeableitung bei einfacher und problemloser Montage in einem Gehäuse gestartet.The object of the invention is to show a metal-ceramic substrate which is suitable for electrical or electronic power circuits or modules is suitable and improved Heat dissipation started with simple and easy installation in a housing.
Zur Lösung dieser Aufgabe ist ein Metall-Keramik-Substrat entsprechend dem kennzeichnenden Teil des Patentanspruches 1 ausgebildet.To solve this problem is a metal-ceramic substrate according to the characterizing part of claim 1 is formed.
Durch die Krümmung des Substrates bzw. der Keramikschicht ist es möglich, dieses im Verwendungsfall elastisch derart eben zu biegen, daß das Substrat aufgrund der elastischen Spannung der Keramikschicht dicht und fest gegen eine Fläche einer Wärme ableitenden Metallplatte anliegt, und sich hierdurch eine verbesserte Wärmeableitung ergibt, insbesondere auch bei Verwendung einer Kühlpaste zwischen dem Substrat und der Metallplatte.Due to the curvature of the substrate or the ceramic layer, this is possible in the Use to bend elastically so flat that the substrate due to the elastic Tension the ceramic layer tightly and firmly against a surface of a heat dissipating Metal plate abuts, and this results in improved heat dissipation, in particular even when using a cooling paste between the substrate and the metal plate.
Bei dem Krümmungsgrad, welches die Erfindung vorsieht, ist auch ein Brechen der Keramikschicht mit Sicherheit vermieden. Weiterbildungen der Erfindung sind Gegenstand der Unteransprüche. Die Erfindung wird im folgenden anhand der Figuren an einem Ausführungsbeispiel näher erläutert. Es zeigen:With the degree of curvature provided by the invention, there is also a breaking of the Certainly avoided ceramic layer. Developments of the invention are the subject of Subclaims. The invention is illustrated below with the aid of the figures Embodiment explained in more detail. Show it:
Fig. 1 in vereinfachter Darstellung und in Seitenansicht ein Substrat gemäß der Erfindung, zusammen mit einer unter dem Substrat angeordneten Metallplatte; FIG. 1 is a simplified representation in side view of a substrate according to the invention together with a substrate disposed below the metal plate;
Fig. 2 eine Draufsicht auf das Substrat der Fig. 1; Fig. 2 is a top view of the substrate of Fig. 1;
Fig. 3 in vergrößerter Detaildarstellung einen Schnitt durch den in einem Gehäuse eingespannten Rand des Substrates; Fig. 3 is an enlarged detail view of a section through the clamped in a housing edge of the substrate;
Fig. 4 in Draufsicht verschiedene Formen eines Substrates der Erfindung. Fig. 4 in plan view different forms of a substrate of the invention.
Das in den Figuren dargestellte Substrat 1 besteht im wesentlichen aus einer Keramikschicht bzw. Keramikplatte 2, die beispielsweise eine Aluminiumoxid-Keramik ist und die an beiden Oberflächenseiten mit jeweils einer Metallisierung 3 bzw. 4 versehen ist. Die Metallisierungen 3 und 4 sind jeweils von einer Kupferfolie gebildet, die mit Hilfe der dem Fachmann bekannten DCB-Technik flächig mit der Keramikschicht 2 verbunden ist.The substrate 1 shown in the figures essentially consists of a ceramic layer or ceramic plate 2 , which is, for example, an aluminum oxide ceramic and which is provided on both surface sides with a metallization 3 or 4 , respectively. The metallizations 3 and 4 are each formed from a copper foil, which is connected to the ceramic layer 2 over the surface using the DCB technology known to the person skilled in the art.
Bei der dargestellten Ausführungsform besitzt die Keramikschicht 2 in Draufsicht einen rechteckförmigen Zuschnitt mit der längeren Längsachse L und der hierzu senkrecht verlaufenden kürzeren Querachse Q. Die Keramikschicht 2 ist bei der dargestellten Ausführungsform um eine Achse parallel zur Querachse gewölbt oder gekrümmt, so daß die Oberseite der Keramikschicht 2 konkav und die Unterseite konvex ist. In gleicher Weise sind auch die dortigen Metallisierungen 3 und 4 gewölbt. Die Krümmungsachse ist in der Fig. 1 mit Q′ angedeutet, besitzt aber tatsächlich einen wesentlich größeren Abstand vom Substrat 1, als in dieser Figur gezeigt. Die Metallisierung 3 an der Oberseite ist strukturiert und bildet Leiterbahnen sowie Kontaktflächen, und zwar letztere insbesondere auch zum Befestigen, z. B. zum Auflöten von elektronischen Bauteilen 5. Die Metallisierung 4 an der Unterseite ist durchgehend ausgebildet.In the illustrated embodiment, the ceramic layer 2 has a rectangular cut in plan view with the longer longitudinal axis L and the shorter transverse axis Q running perpendicular thereto. In the illustrated embodiment, the ceramic layer 2 is curved or curved around an axis parallel to the transverse axis, so that the top of the Ceramic layer 2 is concave and the underside is convex. The metallizations 3 and 4 there are curved in the same way. The axis of curvature is indicated in Fig. 1 with Q ', but actually has a much greater distance from the substrate 1 than shown in this figure. The metallization 3 on the top is structured and forms conductor tracks and contact areas, the latter in particular also for fastening, for. B. for soldering electronic components 5 . The metallization 4 on the underside is continuous.
Die Wölbung der Keramikschicht 2 ist derart, daß dann, wenn das Substrat mit der unteren Metallisierung 4 in der Mitte zwischen den beiden senkrecht zur Längsachse L und parallel zur Krümmungsachse Q′ liegenden Querseiten 2′ auf einer ebenen Fläche, beispielsweise auf der Oberseite einer ebenen Metallplatte 6 aufliegt, die Unterseite der Keramikschicht 2 an jeder Querseite 2′ einen Abstand x von der Oberseite der Metallplatte 6 aufweist, der etwa 0,1-0,8% derjenigen Länge ist, die die gewölbte Keramikschicht 2 zwischen den beiden Seiten 2′ besitzt, und zwar zzgl. der Dicke der unteren Metallisierung 4. Es gilt alsoThe curvature of the ceramic layer 2 is such that when the substrate with the lower metallization 4 in the middle between the two perpendicular to the longitudinal axis L and parallel to the axis of curvature Q 'lying transverse sides 2 ' on a flat surface, for example on the top of a flat Metal plate 6 rests, the underside of the ceramic layer 2 on each transverse side 2 'has a distance x from the top of the metal plate 6 , which is about 0.1-0.8% of the length that the curved ceramic layer 2 between the two sides 2 ' has, plus the thickness of the lower metallization 4 . So it applies
(0,001 · y + d) x (0,008 · y + d)(0.001y + d) x (0.008y + d)
wobei y der Abstand der beiden Seiten 2′ und d die Dicke des Materials der Metallisierung 4 sind. where y is the distance between the two sides 2 'and d is the thickness of the material of the metallization 4 .
Es hat sich gezeigt, daß die thermische Leitfähigkeit zwischen dem Substrat 1 und der Metallplatte 6, die beispielsweise Bestandteil einer Wärmesenke oder eines Gehäuses ist, wesentlich verbessert werden kann. Das Substrat 1 wird auf die an ihrer Oberseite mit einer Schicht aus einer Kühlpaste 7 versehene Platte 6 aufgelegt und dann am Rand und damit auch an den Schmalseiten 2′ auf die Platte 6 gedrückt, womit durch die elastische Verformung der Keramikschicht 2 ein dichtes Anliegen der unteren Metallisierung 4 an der Metallplatte 6 und ein gleichmäßiges Verteilen der Kühlpaste 7 über die gesamte von der unteren Metallisierung 4 eingenommene Fläche der Metallplatte 6 erfolgt.It has been shown that the thermal conductivity between the substrate 1 and the metal plate 6 , which is part of a heat sink or a housing, for example, can be significantly improved. The substrate 1 is placed on the top provided with a layer of a cooling paste 7 plate 6 and then pressed on the edge and thus also on the narrow sides 2 'on the plate 6 , so that the elastic deformation of the ceramic layer 2 is a tight fit lower metallization 4 on the metal plate 6 and a uniform distribution of the cooling paste 7 over the entire area occupied by the lower metallization 4 of the metal plate 6 .
Der Erfindung liegt die Erkenntnis zugrunde, daß bei einer Krümmung, die im Rahmen der vorstehend genannten Grenzen liegt, die Keramikschicht 2 ohne Probleme, insbesondere auch ohne die Gefahr eines Bruches in eine ebene Form zurückgebogen werden kann, und zwar insbesondere auch dann, wenn die obere, an der konkaven Seite der Keramikschicht vorgesehene Metallisierung 3 strukturiert ist und somit zumindest in einem großen Teil der Oberseite der Keramikschicht keine durchgehende Metallisierung bildet, sondern in der Achsrichtung senkrecht zur Krümmungsachse nur jeweils kurze Abmessungen aufweist. Über die obere Metallisierung 3 können somit beim Rückbiegen des Substrates 1 in die ebene Form auch keine übermäßig hohen Zugkräfte zwischen der Keramikschicht 2 und der Metallisierung 3 auftreten.The invention is based on the knowledge that with a curvature that is within the limits mentioned above, the ceramic layer 2 can be bent back into a flat shape without problems, in particular also without the risk of breakage, and in particular even when the Upper metallization 3 provided on the concave side of the ceramic layer is structured and thus does not form a continuous metallization at least in a large part of the upper side of the ceramic layer, but rather only has short dimensions in the axial direction perpendicular to the axis of curvature. Thus, when the substrate 1 is bent back into the flat shape, no excessively high tensile forces can occur between the ceramic layer 2 and the metallization 3 via the upper metallization 3 .
Fig. 3 zeigt die Einspannung des Substrates 1 am Rand, d. h. insbesondere auch im Bereich der beiden Schmalseiten 2′ an dem einen rechteckförmigen Rahmen bildenden Teil 8 eines Gehäuses 9, mit dem das Substrat 1 dann an der den Teil der Wärmesenke bildenden Platte 6 unter Verwendung der Kühlpaste 7 befestigt werden kann. Zur Aufnahme des Randes des Substrates 1 besitzt das Gehäuseteil 8 eine falzartige Ausnehmung 10, die u. a. eine Anlagefläche 11 für die Abstützung der Oberseite der Keramikschicht 2 im Bereich des Randes bildet. Die Falz- oder Anlagefläche 11, aber auch die Unterseite 12 des Gehäuseteils 8 besitzen einen gekrümmten Verlauf, und zwar entsprechend der Wölbung des Substrates 1 bzw. der Keramikschicht 2. Zusätzlich zu dem vorstehend bereits beschriebenen Vorteil eines verbesserten Wärmeübergangs zwischen dem Substrat 1 und der Metallplatte 6 besteht auch der Vorteil, daß Spannungen zwischen dem Substrat 1 und dem Gehäuse 9 vermieden sind, insbesondere auch bei der Montage des Substrates 1 am Gehäuse 9. Erst beim Befestigen auf der Metallplatte 6 werden das Substrat 1 und das Gehäuse 9 elastisch verformt. Fig. 3 shows the clamping of the substrate 1 at the edge, that is to say in particular in the region of the two narrow sides 2 'on the part 8 of a housing 9 forming a rectangular frame, with which the substrate 1 then forms part of the heat sink 6 under Use of the cooling paste 7 can be attached. To accommodate the edge of the substrate 1 , the housing part 8 has a rabbet-like recess 10 , which, among other things, forms a contact surface 11 for supporting the top of the ceramic layer 2 in the region of the edge. The fold or contact surface 11 , but also the underside 12 of the housing part 8 have a curved course, in accordance with the curvature of the substrate 1 or the ceramic layer 2 . In addition to the above-described advantage of an improved heat transfer between the substrate 1 and the metal plate 6, there is also the advantage that stresses between the substrate 1 and the housing 9 are avoided, in particular also when the substrate 1 is mounted on the housing 9 . Only when it is attached to the metal plate 6 are the substrate 1 and the housing 9 elastically deformed.
Wie die Fig. 3 zeigt, ist zwischen dem Rand der Keramikschicht 2 und der Falzfläche 11 eine Zwischenschicht 13 aus einer dauerelastischen Masse, vorzugsweise aus einem dauerelastischen Kleber vorgesehen.As FIG. 3 shows, an intermediate layer 13 made of a permanently elastic mass, preferably made of a permanently elastic adhesive, is provided between the edge of the ceramic layer 2 and the fold surface 11 .
Bei der vorbeschriebenen Ausführungsform wurde davon ausgegangen, daß das Substrat 1 nur um die Achse Q′ gekrümmt ist. Grundsätzlich ist es aber auch möglich, das Substrat so auszuführen, daß es um zwei senkrecht zueinander verlaufende Achsen, nämlich um die Achse Q′ parallel zur Querachse Q und zugleich auch um eine Achse parallel zur Längsachse L gekrümmt ist, und zwar wiederum um beide Achsen konkav an der Oberseite, so daß das Substrat beispielsweise an der Unterseite bzw. an der dortigen Metallisierung 4 eine konvex gewölbte Fläche entsprechend einer Teilfläche einer Kugeloberfläche besitzt.In the embodiment described above, it was assumed that the substrate 1 is only curved about the axis Q '. Basically, it is also possible to design the substrate so that it is curved around two mutually perpendicular axes, namely about the axis Q 'parallel to the transverse axis Q and at the same time also about an axis parallel to the longitudinal axis L, and again about both axes concave on the top, so that the substrate has, for example on the underside or on the metallization 4 there, a convexly curved surface corresponding to a partial surface of a spherical surface.
Weiterhin wurde bei der beschriebenen Ausführungsform davon ausgegangen, daß die Metallisierungen 3 und 4 jeweils die gleiche Dicke d besitzen. Es sind auch Ausführungen denkbar, bei denen die Dicke der Metallisierungen unterschiedlich ist oder bei denen beim Herstellen des Substrates 1 für die untere Metallisierung 4 eine Folie größerer Dicke verwendet wird und diese Metallisierung 4 dann an der Unterseite abgeschliffen wird, so daß sich für das Substrat eine besonders glatte, einen guten Wärmeübergang gewährleistende Unterseite ergibt.Furthermore, it was assumed in the described embodiment that the metallizations 3 and 4 each have the same thickness d. Designs are also conceivable in which the thickness of the metallizations is different or in which a film of greater thickness is used for the manufacture of the substrate 1 for the lower metallization 4 and this metallization 4 is then ground off on the underside, so that the substrate results in a particularly smooth underside that ensures good heat transfer.
Bei der vorgeschriebenen Ausführungsform wurde weiterhin davon ausgegangen, daß das Substrat einen rechteckförmigen Zuschnitt, d. h. in Draufsicht eine rechteckförmige Ausbildung aufweist. Auch andere Formen sind für das Substrat denkbar, beispielsweise das in der Fig. 4 wiedergegebenen Substrat 14, dessen Form sich aus einer rechteckförmigen oder quadratischen Grundform mit Vorsprüngen an zwei gegenüberliegenden Seiten zusammensetzt, oder das rechteckförmige Substrat 15 mit abgerundeten und/oder abgeschrägten Ecken und/oder das runde Substrat 16.In the case of the prescribed embodiment, it was also assumed that the substrate has a rectangular cut, ie a rectangular configuration in plan view. Other shapes are also conceivable for the substrate, for example the substrate 14 shown in FIG. 4, the shape of which is composed of a rectangular or square basic shape with projections on two opposite sides, or the rectangular substrate 15 with rounded and / or beveled corners and / or the round substrate 16 .
BezugszeichenlisteReference list
1 Substrat
2 Keramikschicht
2′ Querseite
3, 4 Metallisierung
5 Halbleiterbauelement
6 Metallplatte
7 Kühlpaste
8 Gehäuseteil
9 Gehäuse
10 Gehäusefalz
11 Falzfläche
12 Unterseite
13 dauerelastische Masse
14, 15, 16 Substrat
L, Q, Q′ Achse
x Abstand
y Länge 1 substrate
2 ceramic layer
2 ′ transverse side
3 , 4 metallization
5 semiconductor device
6 metal plate
7 cooling paste
8 housing part
9 housing
10 case rebate
11 fold surface
12 bottom
13 permanently elastic mass
14 , 15 , 16 substrate
L, Q, Q ′ axis
x distance
y length
Claims (14)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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DE19615481A DE19615481C5 (en) | 1996-04-03 | 1996-04-19 | Arched metal-ceramic substrate |
DE59711737T DE59711737D1 (en) | 1996-04-03 | 1997-03-13 | Arched metal-ceramic substrate |
EP97104225A EP0805492B1 (en) | 1996-04-03 | 1997-03-13 | Curved metal ceramic substrate |
US08/835,049 US5981036A (en) | 1996-04-03 | 1997-03-27 | Metal ceramic substrate |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE19613348 | 1996-04-03 | ||
DE19613348.3 | 1996-04-03 | ||
DE19615481A DE19615481C5 (en) | 1996-04-03 | 1996-04-19 | Arched metal-ceramic substrate |
Publications (3)
Publication Number | Publication Date |
---|---|
DE19615481A1 true DE19615481A1 (en) | 1997-10-09 |
DE19615481B4 DE19615481B4 (en) | 2006-10-05 |
DE19615481C5 DE19615481C5 (en) | 2013-03-14 |
Family
ID=7790380
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19615481A Expired - Fee Related DE19615481C5 (en) | 1996-04-03 | 1996-04-19 | Arched metal-ceramic substrate |
DE59711737T Expired - Lifetime DE59711737D1 (en) | 1996-04-03 | 1997-03-13 | Arched metal-ceramic substrate |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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DE59711737T Expired - Lifetime DE59711737D1 (en) | 1996-04-03 | 1997-03-13 | Arched metal-ceramic substrate |
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DE (2) | DE19615481C5 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0872882A2 (en) * | 1997-04-15 | 1998-10-21 | Curamik Electronics GmbH | Method of fabricating a curved metal-ceramic-substrate |
DE19808518C1 (en) * | 1998-02-27 | 1999-08-05 | Rockwool Mineralwolle | Coating and impregnation of mineral wool for the production of insulation boards |
DE10024111A1 (en) * | 2000-05-18 | 2001-11-29 | Bosch Gmbh Robert | Method for producing a component from stacked soldered plates |
US8018047B2 (en) | 2007-08-06 | 2011-09-13 | Infineon Technologies Ag | Power semiconductor module including a multilayer substrate |
US8154114B2 (en) | 2007-08-06 | 2012-04-10 | Infineon Technologies Ag | Power semiconductor module |
US20130306296A1 (en) * | 2011-02-08 | 2013-11-21 | Fuji Electric Co., Ltd. | Semiconductor module radiator plate fabrication method, radiator plate, and semiconductor module using the same |
DE102015216962B4 (en) | 2014-09-11 | 2022-06-30 | Mitsubishi Electric Corporation | semiconductor device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3263537B1 (en) | 2016-06-27 | 2021-09-22 | Infineon Technologies AG | Method for producing a metal-ceramic substrate |
DE102016118784A1 (en) | 2016-10-04 | 2018-04-05 | Infineon Technologies Ag | Chip carrier, configured for delamination-free encapsulation and stable sintering |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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DE2947270C2 (en) * | 1978-11-25 | 1986-12-11 | Kyocera Corp., Kyoto | Ceramic substrate |
EP0254692A1 (en) * | 1986-07-17 | 1988-01-27 | STMicroelectronics S.r.l. | Semiconductor device mounted in a highly flexible, segmented package, provided with heat sink |
EP0279601A2 (en) * | 1987-02-19 | 1988-08-24 | Marconi Electronic Devices Limited | Electrical conductor arrangement |
DE4004844C1 (en) * | 1990-02-16 | 1991-01-03 | Abb Ixys Semiconductor Gmbh | Copper metallisation on ceramic substrate - obtd. by bonding copper foil directly to whole surface of substrate, then masking and etching |
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DE3127457C2 (en) * | 1981-07-11 | 1985-09-12 | Brown, Boveri & Cie Ag, 6800 Mannheim | Converter module |
JPS60113931A (en) * | 1983-11-25 | 1985-06-20 | Toshiba Corp | Semiconductor device |
DE3521572A1 (en) * | 1985-06-15 | 1986-12-18 | Brown, Boveri & Cie Ag, 6800 Mannheim | PERFORMANCE SEMICONDUCTOR MODULE WITH CERAMIC SUBSTRATE |
DE3935792A1 (en) * | 1989-10-27 | 1991-05-02 | Bosch Gmbh Robert | Encapsulated electronic circuit on substrate - has ceramic green sheet foil, forming wall(s) encapsulating housing |
DE4233073A1 (en) * | 1992-10-01 | 1994-04-07 | Siemens Ag | Semiconductor modular structure prodn. - by convexly shaping and bonding in single hot pressing operation |
DE4319944C2 (en) * | 1993-06-03 | 1998-07-23 | Schulz Harder Juergen | Multiple substrate and process for its manufacture |
JP3329548B2 (en) * | 1993-12-28 | 2002-09-30 | 株式会社東芝 | Ceramic circuit board with heat sink |
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1996
- 1996-04-19 DE DE19615481A patent/DE19615481C5/en not_active Expired - Fee Related
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DE2947270C2 (en) * | 1978-11-25 | 1986-12-11 | Kyocera Corp., Kyoto | Ceramic substrate |
EP0254692A1 (en) * | 1986-07-17 | 1988-01-27 | STMicroelectronics S.r.l. | Semiconductor device mounted in a highly flexible, segmented package, provided with heat sink |
EP0279601A2 (en) * | 1987-02-19 | 1988-08-24 | Marconi Electronic Devices Limited | Electrical conductor arrangement |
DE4004844C1 (en) * | 1990-02-16 | 1991-01-03 | Abb Ixys Semiconductor Gmbh | Copper metallisation on ceramic substrate - obtd. by bonding copper foil directly to whole surface of substrate, then masking and etching |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0872882A2 (en) * | 1997-04-15 | 1998-10-21 | Curamik Electronics GmbH | Method of fabricating a curved metal-ceramic-substrate |
EP0872882A3 (en) * | 1997-04-15 | 1999-04-21 | Curamik Electronics GmbH | Method of fabricating a curved metal-ceramic-substrate |
DE19808518C1 (en) * | 1998-02-27 | 1999-08-05 | Rockwool Mineralwolle | Coating and impregnation of mineral wool for the production of insulation boards |
DE10024111A1 (en) * | 2000-05-18 | 2001-11-29 | Bosch Gmbh Robert | Method for producing a component from stacked soldered plates |
DE10024111B4 (en) * | 2000-05-18 | 2006-02-23 | Robert Bosch Gmbh | Method for producing a component from plates which have been stacked and soldered to one another |
US8018047B2 (en) | 2007-08-06 | 2011-09-13 | Infineon Technologies Ag | Power semiconductor module including a multilayer substrate |
US8154114B2 (en) | 2007-08-06 | 2012-04-10 | Infineon Technologies Ag | Power semiconductor module |
DE102008036112B4 (en) | 2007-08-06 | 2021-09-30 | Infineon Technologies Ag | POWER SEMICONDUCTOR MODULE, POWER SEMICONDUCTOR ARRANGEMENT AND METHOD FOR MANUFACTURING A POWER SEMICONDUCTOR MODULE |
US20130306296A1 (en) * | 2011-02-08 | 2013-11-21 | Fuji Electric Co., Ltd. | Semiconductor module radiator plate fabrication method, radiator plate, and semiconductor module using the same |
US10262874B2 (en) | 2011-02-08 | 2019-04-16 | Fuji Electric Co., Ltd. | Semiconductor module radiator plate fabrication method, radiator plate, and semiconductor module using the same |
DE102015216962B4 (en) | 2014-09-11 | 2022-06-30 | Mitsubishi Electric Corporation | semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
DE59711737D1 (en) | 2004-08-05 |
DE19615481C5 (en) | 2013-03-14 |
DE19615481B4 (en) | 2006-10-05 |
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