[go: up one dir, main page]

DE1269738B - Method for stabilizing semiconductor components - Google Patents

Method for stabilizing semiconductor components

Info

Publication number
DE1269738B
DE1269738B DE19641269738 DE1269738A DE1269738B DE 1269738 B DE1269738 B DE 1269738B DE 19641269738 DE19641269738 DE 19641269738 DE 1269738 A DE1269738 A DE 1269738A DE 1269738 B DE1269738 B DE 1269738B
Authority
DE
Germany
Prior art keywords
semiconductor
oxide
semiconductor system
film
boron trioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19641269738
Other languages
German (de)
Inventor
Walter Klossika
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Priority to DE19641269738 priority Critical patent/DE1269738B/en
Publication of DE1269738B publication Critical patent/DE1269738B/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Description

Verfahren zur Stabilisierung von Halbleiterbauelementen Die Erfindung betrifft ein Verfahren zur Stabilisierung von Halbleiterbauelementen, insbesondere Transistoren oder Dioden, durch Behandlung der Halbleiteroberfläche mittels Wasserstoffperoxyd, bei dem zunächst auf der Halbleiteroberfläche durch Eintauchen in Wasserstoffperoxyd ein Oxydfilm aus Oxydhydraten geschaffen wird. Die Erfindung besteht bei einem solchen Verfahren darin, daß auf der Oxydhydratschicht eine Oberflächenschicht aus Bortrioxyd und/oder Aluminiumoxyd aufgebracht wird.Method for stabilizing semiconductor components The invention relates to a method for stabilizing semiconductor components, in particular Transistors or diodes, by treating the semiconductor surface with hydrogen peroxide, in which first on the semiconductor surface by immersion in hydrogen peroxide an oxide film is created from oxide hydrates. The invention consists in such Method in that on the oxide hydrate layer a surface layer of boron trioxide and / or aluminum oxide is applied.

Es ist bereits bekannt, ein Halbleitersystem zur Oberflächenstabilisierung in eine Lösung von Wasserstoffperoxyd, auch Perhydrol genannt, einzutauchen und dadurch auf der Halbleiteroberfläche einen Film zu erzeugen, der das Halbleitersystem stabilisiert. Der Erfindung liegt jedoch die Erkenntnis zugrunde, daß die stabilisierende Wirkung eines solchen Filmes bereits nach wenigen Stunden nachläßt. Dies wird nach der Erfindung dadurch verhindert, daß auf dem Film, der durch Eintauchen in eine Lösung von Wasserstoffperoxyd entsteht, Bortrioxyd und/oder Aluminiumoxyd aufgebracht wird.A semiconductor system for surface stabilization is already known immerse in a solution of hydrogen peroxide, also called perhydrol, and thereby producing a film on the semiconductor surface, which film the semiconductor system stabilized. However, the invention is based on the knowledge that the stabilizing The effect of such a film wears off after a few hours. This will be after the invention thereby prevented that on the film by immersion in a Solution of hydrogen peroxide is formed, boron trioxide and / or aluminum oxide is applied will.

Die Erfindung wird im folgenden am Beispiel eines Legierungstransistors erläutert.The invention is illustrated below using the example of an alloy transistor explained.

Zur Stabilisierung der Oberfläche des Halbleitersystems wird der Transistor nach dem Legieren und Ätzen sowie nach sorgfältigem Waschen und Spülen in entsalztem Wasser in eine Perhydrollösung getaucht und danach an der Luft getrocknet. Dabei überzieht sich die Oberfläche des Halbleitersystems mit einem sehr dünnen Film. Werden so behandelte Transistoren unmittelbar nach der Herstellung des Oberflächenfilms gemessen, so erhält man ausgezeichnete elektrische Werte. Diese guten elektrischen Werte sind jedoch nicht von Dauer, da Untersuchungen ergeben haben, daß ein solcher Film auf der Oberfläche des Halbleitersystems bereits nach kurzer Zeit seine Stabilisierungseigenschaften verliert.The transistor is used to stabilize the surface of the semiconductor system after alloying and etching and after careful washing and rinsing in desalinated Dipped water in a perhydrol solution and then allowed to air dry. Included the surface of the semiconductor system is covered with a very thin film. Are so treated transistors immediately after the production of the surface film measured, excellent electrical values are obtained. These good electric ones However, values are not permanent as research has shown that such a Film on the surface of the semiconductor system after a short time its stabilizing properties loses.

Das Nachlassen der Stabilisierungseigenschaften des durch eine Perhydrollösung hergestellten Filmes läßt sich jedoch verhindern, wenn das Halbleitersystem mit dem Oberflächenfilm gemäß der Erfindung in eine Mischpaste aus Bortrioxyd und Aluminiumoxyd getaucht wird. Diese Mischpaste entsteht durch Aufschlämmen von Bortrioxyd und Aluminiumoxyd in Silikonöl. Nach der Figur geschieht dies bespielsweise dadurch, daß das Halbleitersystem in die Gehäusekappe 1 eingeführt wird, in der sich bereits die Mischpaste 2 befindet. Das Halbleitersystem besteht aus dem auf ein Trägerblech 3 aufgebrachten Halbleiterkörper 4, der Emitterelektrode 5 und der Kollektorelektrode G. Die Oberfläche des Halbleiterkörpers ist erfindungsgemäß mit einem durch Perhydrol -erzeugten Film 7 überzogen, der durch das Einführen des Legierungstransistors in die mit der Mischpaste gefüllte Gehäusekappe von der Mischpaste umgeben wird. Die Kontaktierung der Emitter- und Kollektorelektroden erfolgt durch Elektrodenzuleitungen 8 und 9, die ihrerseits wieder sowie auch das Trägerblech 3 mit den Sockelstiften 10, 11 und 12 elektrisch leitend verbunden sind.The decrease in the stabilizing properties of the perhydrol solution produced film can be prevented if the semiconductor system with the surface film according to the invention in a mixed paste of boron trioxide and aluminum oxide is dived. This mixed paste is made by slurrying boron trioxide and aluminum oxide in silicone oil. According to the figure, this happens, for example, in that the semiconductor system is inserted into the housing cap 1, in which the mixing paste 2 is already located. The semiconductor system consists of the semiconductor body applied to a carrier plate 3 4, the emitter electrode 5 and the collector electrode G. The surface of the semiconductor body is coated according to the invention with a film 7 produced by Perhydrol, which through inserting the alloy transistor into the housing cap filled with the mixed paste is surrounded by the mixing paste. The contacting of the emitter and collector electrodes takes place through electrode leads 8 and 9, which in turn, as well as the Carrier sheet 3 are electrically conductively connected to the base pins 10, 11 and 12.

Claims (2)

Patentansprüche: 1. Verfahren zur Stabilisierung von Halbleiterbauelementen, insbesondere Transistoren oder Dioden, durch Behandlung der Halbleiteroberflächen mittels Wasserstoffperoxyd, bei dem zunächst auf der Halbleiteroberfläche durch Eintauchen in Wasserstoffperoxyd ein Oxydfilm aus Oxydhydraten geschaffen wird, d a d u r c h g e -kennzeichnet, daß auf der Oxydhydratschicht eine Oberflächenschicht aus Bortrioxyd und/oder Aluminiumoxyd aufgebracht wird. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß das Halbleitersystem mit dem Oberflächenfilm in eine Mischpaste aus Bortrioxyd und Aluminium eingebettet wird. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß das Halbleitersystem in eine Perhydrollösung getaucht, getrocknet und anschließend in die Mischpaste aus Bortrioxyd und Aluminiumoxyd eingebracht wird. 4. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß das Halbleitersystem vor dem Eintauchen in die Perhydrollösung in entsalztem Wasser gewaschen und gespült wird. In Betracht gezogene Druckschriften: Deutsche Auslegeschriften Nr.1126 513, 1175 796; USA.-Patentschrift Nr. 2 900 701; »The Sylvania Technologist«, Bd. 11 (1958), H. Claims: 1. Method for stabilizing semiconductor components, in particular transistors or diodes, by treating the semiconductor surfaces by means of hydrogen peroxide, which initially occurs on the semiconductor surface Immersion in hydrogen peroxide creates an oxide film of oxide hydrates, d a d u r c h g e - indicates that there is a surface layer on the oxide hydrate layer from boron trioxide and / or aluminum oxide is applied. 2. The method according to claim 1, characterized in that the semiconductor system with the surface film in a Mixing paste of boron trioxide and aluminum is embedded. 3. The method according to claim 1 or 2, characterized in that the semiconductor system is in a perhydrol solution dipped, dried and then in the mixed paste of boron trioxide and aluminum oxide is introduced. 4. The method according to any one of claims 1 to 3, characterized in that the semiconductor system prior to immersion in the perhydrol solution is washed and rinsed in deionized water. Considered publications: German Auslegeschriften Nos. 1126 513, 1175 796; U.S. Patent No. 2,900,701; "The Sylvania Technologist", Vol. 11 (1958), h. 2, S. 50 bis 58.2, pp. 50 to 58.
DE19641269738 1964-10-20 1964-10-20 Method for stabilizing semiconductor components Pending DE1269738B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19641269738 DE1269738B (en) 1964-10-20 1964-10-20 Method for stabilizing semiconductor components

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DET0027239 1964-10-20
DE19641269738 DE1269738B (en) 1964-10-20 1964-10-20 Method for stabilizing semiconductor components

Publications (1)

Publication Number Publication Date
DE1269738B true DE1269738B (en) 1968-06-06

Family

ID=25751203

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19641269738 Pending DE1269738B (en) 1964-10-20 1964-10-20 Method for stabilizing semiconductor components

Country Status (1)

Country Link
DE (1) DE1269738B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2516291A1 (en) * 1974-04-18 1975-11-06 Fairchild Camera Instr Co METHOD FOR MANUFACTURING MOS CIRCUITS

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2900701A (en) * 1953-04-07 1959-08-25 Sylvania Electric Prod Semiconductor devices and methods
DE1126513B (en) * 1958-08-19 1962-03-29 Intermetall Process for processing semiconductor arrangements
DE1175796B (en) * 1958-03-04 1964-08-13 Philips Nv Semiconductor device and method for its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2900701A (en) * 1953-04-07 1959-08-25 Sylvania Electric Prod Semiconductor devices and methods
DE1175796B (en) * 1958-03-04 1964-08-13 Philips Nv Semiconductor device and method for its manufacture
DE1126513B (en) * 1958-08-19 1962-03-29 Intermetall Process for processing semiconductor arrangements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2516291A1 (en) * 1974-04-18 1975-11-06 Fairchild Camera Instr Co METHOD FOR MANUFACTURING MOS CIRCUITS

Similar Documents

Publication Publication Date Title
DE2142146A1 (en) Semiconductor arrangement and method for producing such an arrangement
DE2259829A1 (en) METHOD FOR TREATMENT OF GALLIUM-CONTAINING CONNECTING SEMI-CONDUCTORS
DE1489240B1 (en) Method for manufacturing semiconductor components
DE1231812B (en) Process for the production of electrical semiconductor components according to the mesa diffusion technique
DE1269738B (en) Method for stabilizing semiconductor components
DE1160547B (en) Method for electrolytic etching of a semiconductor component with an essentially single-crystalline semiconductor body and a pn junction emerging on the surface
DE1614829A1 (en) Method for manufacturing a semiconductor component
DE2158681B2 (en) Method for treating a light-emitting semiconductor device having a pn junction
DE977619C (en) Method for producing a protective layer on a semiconductor arrangement with at least one p-n junction
DE2238245A1 (en) METHOD OF TREATMENT OF ALUMINUM FOIL FOR ELECTROLYTE CAPACITORS
DE1184423B (en) Method for producing a protective layer on a semiconductor component
AT232548B (en) Method for manufacturing a semiconductor device
US3409979A (en) Method for the surface treatment of semiconductor devices
DE2551444A1 (en) METHOD FOR SHAPING A SEMICONDUCTOR BODY
DE2214384C3 (en) Method for producing a thermocompression contact
DE7428330U (en) DEVICE FOR ETCHING ACTIVE SEMICONDUCTOR PARTS
DE1015541B (en) Process for etching electrically asymmetrically conductive semiconductor arrangements
DE901814C (en) Process for processing roughened surfaces
DE840121C (en) Method of manufacturing selenium AC rectifiers
DE1225771B (en) Semiconductor component and method for its manufacture
DE2551808A1 (en) METHOD OF INCREASING THE GAIN FACTOR OF TRANSISTORS USING AN ORGANIC COMPOUND
DE971458C (en) Process for the production of asymmetrically conductive systems accommodated in cup-shaped recesses
DE1489091C2 (en) Encapsulated semiconductor device
DE1122635B (en) Process for the galvanoplastic production of contacts on semiconductor bodies
DE2128360A1 (en) Process for the formation of ohmic contacts on metal insulator semiconductor components