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DE1100819B - Semiconductor device built into a cylindrical housing - Google Patents

Semiconductor device built into a cylindrical housing

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Publication number
DE1100819B
DE1100819B DES62289A DES0062289A DE1100819B DE 1100819 B DE1100819 B DE 1100819B DE S62289 A DES62289 A DE S62289A DE S0062289 A DES0062289 A DE S0062289A DE 1100819 B DE1100819 B DE 1100819B
Authority
DE
Germany
Prior art keywords
housing
semiconductor device
insulating part
semiconductor
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES62289A
Other languages
German (de)
Inventor
Dr Heinz Henker
Dr Ernst Hofmeister
Dr Guenther Kesel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES62289A priority Critical patent/DE1100819B/en
Publication of DE1100819B publication Critical patent/DE1100819B/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/4805—Shape
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    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H01L2924/151—Die mounting substrate
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    • H01L2924/30107—Inductance

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

In ein zylindrisches Gehäuse eingebaute Halbleitervorrichtung Die Erfindung bezieht sich auf eine in ein zylindrisches Gehäuse eingebaute Halbleitervorrichtung mit zwei Elektroden, die koaxial aus dem Gehäuse herausgeführt sind, bei der der Halbleiterkörper auf einem in. einem Gehäuse angeordneten Isolierteil mechanisch befestigt ist und die beiden. Elektroden des Halbleiterkörpers mit zu beiden Seiten aus dem Gehäuse koaxial heraustretenden Stromzuführungen elektrisch verbunden sind.Semiconductor device built in a cylindrical case Die The present invention relates to a semiconductor device built into a cylindrical housing with two electrodes, which are led out coaxially from the housing, in which the Semiconductor body mechanically on an insulating part arranged in a housing is attached and the two. Electrodes of the semiconductor body with on both sides from the housing coaxially emerging power supply lines are electrically connected.

Es ist bekannt, Spitzendioden, die für Ultrahochfrequenz verwendet werden, koaxial aufzubauen. Dabei tritt aber der Nachteil auf, daß die Feder, die auf dem Kristall aufsitzt, eine bei hohen Frequenzen störende Induktivität aufweist, .so daß die Resonanzfrequenz des Systems im allgemeinen unter 5 GHz liegt. Die Feder kann aber nicht beliebig kurz gemacht werden, da sie federnd und stabil auf dem Kristall aufsitzen -muß. Dieser Nachteil tritt bei legierten oder diffundierten Systemen nicht auf.It is known tip diodes used for ultra high frequency be built coaxially. But this has the disadvantage that the spring, the sits on the crystal, has a disruptive inductance at high frequencies, .so that the resonance frequency of the system is generally below 5 GHz. The feather but cannot be made as short as you like, as they are resilient and stable on the Crystal must sit on. This disadvantage occurs with alloyed or diffused Systems do not work.

Die bisherigen. koaxialen Gehäuse für Spitzendioden eignen sich jedoch nicht für den Einbau legierter oder diffundierter Kristallsysteme. Es ist die Aufgabe vorliegender Erfindung, auch für diese Systeme den bei der Anwendung im Ultrahochfrequenzgebiet notwendigen kapazitätsarmen, d. h. koaxialen Aufbau zu ermöglichen. Dabei soll die Zuleitung zur gleichrichtenden Schicht einerseits großflächig, andererseits kapazitätsarm aufgebaut sein.The previous. however, coaxial housings for tip diodes are suitable not for the installation of alloyed or diffused crystal systems. It's the job of the present invention, also for these systems when used in the ultra-high frequency range necessary low capacity, d. H. to enable coaxial construction. The Supply line to the rectifying layer on the one hand with a large area, on the other hand with low capacitance be constructed.

Es sind zwar Transistoranordnungen bekannt, bei denen die Emitter- und die Kollektorelektrode koaxial aus dem Gehäuse herausgeführt sind. Die Zuführungen zu den Elektroden sind aber weder kapazitätsnoch induktivitätsarm.Although transistor arrangements are known in which the emitter and the collector electrode are led out coaxially from the housing. The feedings to the electrodes, however, are neither low-capacitance nor low-inductance.

Erfindungsgemäß wird dies dadurch erreicht, daß der Halbleiterkörper auf einem zu beiden Seiten koaxial aus dem Gehäuse heraustretenden, teilweise metallisierten stabförmigen Isolierteil befestigt ist.According to the invention this is achieved in that the semiconductor body on a partially metallized one protruding coaxially from the housing on both sides Rod-shaped insulating part is attached.

Die nähere Erläuterung der Erfindung soll an Hand der Figuren. gegeben, werden.A more detailed explanation of the invention should be based on the figures. given, will.

Bei dem in Fig. 1 dargestellten Ausführungsbeispiel trägt das stabförmige Isolierteil 2, das insbesondere aus Keramik besteht, den Halbleiterkörper 1. Es ist besonders günstig, wenn das Isolierteil 2 zum Halbleiterkörper 1 hin eine Querschnittsverminderung aufweist. Außerdem hat bei diesem Ausführungsbeispiel das Isolierteil 2 eine Öffnung, durch die die eine Elektrode V, insbesondere diejenige, die sperrfrei mit dem Halbleiterkörper kontaktiert ist. hindurchgeführt ist. Die Elektroden 1' und 1" können z. B. Legierungselektroden sein, von denen wenigstens eine einen sperrenden. Kontakt mit dem Halbleiterkörper 1 bildet. Ebenso kann der Halbleiterkörper 1 aber auch einen durch Diffusion gebildeten oder einen gezogenen pn-Übergang enthalten. Das stabförmige Isolierteil 2, das zu beiden Seiten koaxial aus dem Gehäuse herausragt, ist teilweise metallisiert, wie das z. B. in Fig.2 von oben gesehen und in Fig.3 von unten gesehen dargestellt ist. Die Metallisierung ist so ausgebildet, daß sie in Verbindung mit den Kontaktzuführungen 5 und 6 als großflächige und dabei kapazitäts- und induktivitätsarme Stromzuführungen zu den Elektroden 1' und 1" dient. Die mit 3' bzw. 4' bezeichneten Stellen des Isolierteils 2 sind dabei mit einer Metallauflage versehen, während die über die Abschlußscheiben 7 und 10 des Gehäuses herausragenden Teile des Isolierteils 2 mit einer metallischen Kontakthülse 3 bzw. 4 versehen sind, die auf das stabförmige Isolierteil 2 -äüfgesohoben ist.In the embodiment shown in Fig. 1, the rod-shaped Insulating part 2, which consists in particular of ceramic, the semiconductor body 1. It is particularly favorable if the insulating part 2 has a reduction in cross section towards the semiconductor body 1 having. In addition, in this embodiment, the insulating part 2 has an opening through which one electrode V, in particular that which is lock-free with the semiconductor body is contacted. is passed through. The electrodes 1 'and 1 "can, for example, be alloy electrodes be, of which at least one is blocking. Contact with the semiconductor body 1 forms. However, the semiconductor body 1 can also be formed by diffusion or contain a drawn pn junction. The rod-shaped insulating part 2, which to protruding coaxially from the housing on both sides, is partially metallized, like the Z. B. seen from above in Figure 2 and shown in Figure 3 seen from below. The metallization is designed so that it is in connection with the contact leads 5 and 6 as large-area, low-capacitance and low-inductance power supply lines to the electrodes 1 'and 1 ″. The points of the insulating part marked with 3' and 4 ' 2 are provided with a metal pad, while those on the lens 7 and 10 of the housing protruding parts of the insulating part 2 with a metallic Contact sleeve 3 or 4 are provided, which -äüfgesoben on the rod-shaped insulating part 2 -äüfgesoben is.

Es ist ein weiteres Merkmal der vorliegenden Anordnung, daß der scheibenförmige Halbleiterkörper 1 mit .seiner mit 8 bezeichneten pn-Fläche etwa parallel zur Längsachse der Stromzuführungen 3 und 4 bzw. des stabsförmigen Isolierteils 2 angeordnet ist. Das Gehäuse wird nachträglich über das fertige, d. h. das mechanisch und elektrisch mit dem Isolierteil 2 verbundene System auf den Keramikstab 2 aufgeschoben. Es besteht aus dem insbesondere keramischen Isolierrohr 9 und den, beiden dicht aufgebrachten metallischen Abschlüßscheiben 7 und 10. Die Gehäuseteile werden insbesondere vor dem Einbringen des das Halbleitersystem tragenden Isolierteils 2 bei hoben Temperaturen dicht verlötet oder legiert. Durch die Abschlußscheiben 7 und 10 sind die Stromzuführungen 3 und 4, insbesondere das Isolierteil 2, mit seinen aufmetallisierten Schichten 3' bzw. 4' dicht hindurchgeführt.It is a further feature of the present arrangement that the disk-shaped semiconductor body 1 with its pn surface designated by 8 is arranged approximately parallel to the longitudinal axis of the power supply lines 3 and 4 or the rod-shaped insulating part 2. The housing is subsequently pushed onto the ceramic rod 2 via the finished system, ie the system that is mechanically and electrically connected to the insulating part 2. It consists of the especially ceramic insulating tube 9 and the two tightly applied metallic end disks 7 and 10. The housing parts are soldered or alloyed in particular before the insulating part 2 carrying the semiconductor system is inserted at elevated temperatures. The power supply lines 3 and 4, in particular the insulating part 2, with its metallized layers 3 ' and 4', respectively, are passed tightly through the cover plates 7 and 10.

Es ist ein besonderer Vorteil der vorliegenden Anordnung, daß das aus dem Halbleiterkörper 1 und den Elektroden 1' und 1" bestehende Kristallsystem ohne Behinderung durch das Gehäuse auf das Isolierteil 2 unter optischer Kontrolle aufgebracht, eingestellt und kontaktiert werden kann. Damit sind die Gehäuseabmessungen in Unterschied zu dem bei Spitzendioden üblichen Aufbau von der- Systemenstellulig unabhängig und können sehr kline Toleranzen aufweisen, was für den präzisen Einbau der Ultrahochfrequenzdiode in die Diodenaufnahme sehr wesentlich ist. Gegebenenfalls kann das Gehäuse auch nach dem Zusammenlöten mechanisch nachgearbeitet werden.It is a particular advantage of the present arrangement that the crystal system consisting of the semiconductor body 1 and the electrodes 1 'and 1 " without Obstruction by the housing on the insulating part 2 under optical Control can be applied, adjusted and contacted. That’s the case dimensions in contrast to the usual structure of the system with tip diodes independent and can have very narrow tolerances, which is essential for precise installation the ultra-high frequency diode in the diode inclusion is very essential. Possibly the housing can also be mechanically reworked after being soldered together.

In Fig. 4 ist ein anderes Ausführungsbeispiel einer Halbleitervorrichtung mit koaxialem Aufbau dargestellt, bei dem nur eine Elektrode 11 über eine Kontaktzuleitung 12 mit einer auf dem Isolierteil 2 - aufmetallisierten Schicht 3' verbunden ist, während die andere Elektrode direkt mit dem metallisierten Isolierteil 2, z. B. durch, Auflöten, verbunden ist. Dazu wird das bei diesem Ausführungsbeispiel aus einem Stück bestehende Isolierteil 2 mit einer Metallschicht 13 versehen, mit der insbesondere der sperrfreie Kontakt des Halbleiterkörpers 1 verbunden ist. In den Fig. 5 bzw. 6 ist das metallisierte, insbesondere aus Keramik bestehende Isolierteil 2 von oben bzw. von unten gesehen dargestellt. Der übrige Aufbau der Anordnung ist derselbe, wie er bereits bei Fig. 1 erläutert wurde.4 shows another embodiment of a semiconductor device with a coaxial structure, in which only one electrode 11 is connected via a contact lead 12 to a layer 3 'metallized on the insulating part 2, while the other electrode is directly connected to the metallized insulating part 2, z. B. by soldering connected. For this purpose, the insulating part 2, which in this exemplary embodiment consists of one piece, is provided with a metal layer 13, to which in particular the non-blocking contact of the semiconductor body 1 is connected. In FIGS. 5 and 6, the metallized insulating part 2, in particular consisting of ceramic, is shown viewed from above and below. The rest of the structure of the arrangement is the same as that already explained in connection with FIG. 1.

Durch Aufbringen eines Dielektrikums auf das metallisierte Isolierstück 2 kann in die Diode der bei Hochfrequenzanwendung notwendige Kurzschlußkondensator gleichzeitig mit eingebaut werden. Der Kondensatorbelag kann entweder auf einer oder-- auf beiden Stromzuführungen angebracht werden. Das in Fig. 7 dargestellte Ausführungsbeispiel zeigt eine Halbleitervorrichtung mit eingebautem Kurzschlußkondensator, der hier z. B. auf beiden Seiten der Stromzuführungen 3 und 4 angebracht ist und für koaxiale oder Hohlleitermontage geeignet ist. Der Einbau des Systems ist dabei beliebig und kann also dem in Fig. 1 oder 2 dargestellten gleichen. Auf einem metallisierten Teil des Systemträgers 2 ist ein Dielektrikum 14 aufgebracht, wobei die Metalllsierung den einen Kondensatorbelag darstellt: Als zweiter Kondensatorbelag dienen Teile derAbschlußacheiben 7 und 10 des Gehäuses.By applying a dielectric to the metallized insulating piece 2 the short-circuit capacitor, which is necessary for high-frequency applications, can be inserted into the diode be installed at the same time. The capacitor plate can either be on one or - be attached to both power supply lines. That shown in FIG Embodiment shows a semiconductor device with built-in short-circuit capacitor, here z. B. is attached on both sides of the power supply lines 3 and 4 and is suitable for coaxial or waveguide mounting. The installation of the system is included arbitrary and can therefore be the same as that shown in FIG. 1 or 2. On a metallized Part of the system carrier 2, a dielectric 14 is applied, with the metal solution which represents a capacitor layer: Parts are used as the second capacitor layer the end shims 7 and 10 of the housing.

Die mit aufgeschobenen metallischen Kontakt-, hülsen 3 und 4 versehenen, aus dem Gehäuse herausragenden Teile des Systemträgers 2 dienen als Gleichstromkontakte, die metallischen. Abschlußscheiben 7 und 10 Hochfrequenzkontakte.The parts of the system carrier 2, provided with pushed-on metallic contact sleeves 3 and 4 and protruding from the housing, serve as direct current contacts, the metallic ones. End discs 7 and 10 high-frequency contacts.

Claims (7)

PATENTANSPROCHEr 1. In ein zylindrisches Gehäuse eingebaute Halbleitervorrichtung mit zwei Elektroden, die koaxial aus dem Gehäuse herausgeführt sind, bei der der Halbleiterkörper auf einem im Gehäuse angeordneten Isolierteil mechanisch befestigt und die beiden Elektroden des Halbleiterkörpers mit zu beiden Seiten aus dem Gehäuse koaxial heraustretenden Stromzuführungen elektrisch verbunden sind., dadurch gekennzeichnet, daß der Halbleiterkörper (1) auf einem zu beiden Seiten koaxial aus dem Gehäuse » heraustretenden, teilweise metallisierten (3', 4') stabförmigen Isolierteil (2) befestigt ist. PATENT APPEAL 1. Semiconductor device built into a cylindrical housing with two electrodes, which are led out coaxially from the housing, in which the Semiconductor body mechanically fastened on an insulating part arranged in the housing and the two electrodes of the semiconductor body with both sides out of the housing coaxially emerging power supply lines are electrically connected., characterized in, that the semiconductor body (1) on one side coaxially out of the housing »Protruding, partially metallized (3 ', 4') rod-shaped insulating part (2) is attached. 2. Halbleitervorrichtung nach, Anspruch 1, dadurch gekennzeichnet, daß mindestens eine Elektrode des - - Hslbleiterkörpers durch eine Elektrodenzuleitung (12) mit den zugehörigen, auf das Isolierteil (2) aufmetallisierten Schichten (3', 4') verbunden ist. 2. The semiconductor device according to claim 1, characterized in that that at least one electrode of the - - conductor body through an electrode lead (12) with the associated layers (3 ', 4 ') is connected. 3: Halbleitervorrichtung nach Anspruch 1 oder 2, dadurch gekennzeichnet. daß der Halbleiterkörper scheiben- oder halbkugelförmig ausgebildet und mit einem pn-Übergang versehen ist und daß der Halbleiterkörper mit der Fläche (8) des pn-Übergangs etwa parallel zur Längsachse der Stromzuführungen, (3, 4) bzw. des - stabförmigenIsolierteils (2) im Gehäuse angeordnet ist. 3: Semiconductor device according to claim 1 or 2, characterized. that the semiconductor body is disc-shaped or hemispherical and with a pn junction is provided and that the semiconductor body with the surface (8) of the pn junction roughly parallel to the longitudinal axis of the power supply lines (3, 4) or the rod-shaped insulating part (2) is arranged in the housing. 4. Halbleitervorrichtung. nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß das Gehäuse aus einem Isolierrohr (9) mit an beiden Seiten dicht aufgebrachten Abschlußscheiben (7, 10) besteht. 4. Semiconductor device. according to one of the claims 1 to 3, characterized in that the housing consists of an insulating tube (9) with there is sealing disks (7, 10) on both sides. 5. Halbleitervorrichtung nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß durch die Abschlußscheiben die Stromzuführungen dicht hindurchgeführt sind. 5. Semiconductor device according to one of claims 1 to 4, characterized in that through the closure disks the power supply lines are passed through tightly. 6. Halbleitervorrichtung nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß ein Dielektrikuni (14) zwischen dem metallisierten Isolierteil (2) und der Abschlußscheibe (7) und/ oder der Abschlußscheibe (10) aufgebracht ist. 6. Semiconductor device according to one of claims 1 to 5, characterized in that a Dielektrikuni (14) between the metallized insulating part (2) and the cover plate (7) and / or the cover plate (10) is applied. 7. Verfahren zum Herstellen einer Halbleitervorrichtung nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß zunächst das Halbleitersystem (1, 1', 1") mechanisch und elektrisch fest mit dem stab-förmigen, teilweise metallisierten Isolierteil verbunden wird und dann das mit den Abschlußscheiben (7 und 10) versehene Isolierrohr (9) über das stabförmige Isolierteil (2) geschoben und mit diesem dicht verbunden wird. In Betracht gezogene Druckschriften: Deutsche Patentschriften Nr. 860 973, 896 392; USA: Patentschrift Nr. 2 875 385.7. A method for manufacturing a semiconductor device according to FIG one of claims 1 to 6, characterized in that initially the semiconductor system (1, 1 ', 1 ") mechanically and electrically solid with the rod-shaped, partially metallized The insulating part is connected and then the one provided with the cover disks (7 and 10) Insulating tube (9) pushed over the rod-shaped insulating part (2) and sealed with it is connected. Considered publications: German Patent Specifications No. 860 973, 896 392; USA: Patent No. 2,875,385.
DES62289A 1959-03-24 1959-03-24 Semiconductor device built into a cylindrical housing Pending DE1100819B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1230918B (en) * 1964-05-08 1966-12-22 Telefunken Patent Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE860973C (en) * 1944-08-21 1952-12-29 Siemens Ag detector
DE896392C (en) * 1951-11-13 1953-11-12 Licentia Gmbh Housing for an electrically asymmetrically conductive system of the crystal type
US2875385A (en) * 1954-02-18 1959-02-24 Pye Ltd Transistors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE860973C (en) * 1944-08-21 1952-12-29 Siemens Ag detector
DE896392C (en) * 1951-11-13 1953-11-12 Licentia Gmbh Housing for an electrically asymmetrically conductive system of the crystal type
US2875385A (en) * 1954-02-18 1959-02-24 Pye Ltd Transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1230918B (en) * 1964-05-08 1966-12-22 Telefunken Patent Semiconductor device

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