DE10355038A1 - Application of anti-stick coating, preferably to micromechanical structure, e.g. sensor or actuator for gyroscope or acceleration sensor, uses silanes with reactive and inert groups, preferably in chemical vapor deposition, and hydrolysis - Google Patents

Abstract

Application of an anti-stick coating by treating a surface with a silane is carried out with compound(s) selected from silanes with reactive and inert substituents and specified range of silanes, silylated perfluoro-polyethers and amines, silazanes and siloxanes. Application of an anti-stick coating by treating a surface with a silane is carried out with a silane (mixture) selected from silanes of formulae (1a-1d), (1e-1g), (1h) and (1i) with specified combinations of substituents or from compound(s) selected from 13- and 11-(trichlorosilylmethyl)-heptacosane, hexadecyl- and isopropyl-trichlorosilane, methyl-triethoxy- and triacetoxy-silane, 3,3,3-trifluoropropyl-tri(m)ethoxy-, -triacetoxy- and -trichloro-silane; dimethyldichlorosilane; di(3,3,3-trifluoropropyl)-dichloro-, -dimethoxy- and -diethoxy-silane; tri(3,3,3-trifluoropropyl)chlorosilane; silylated perfluoro-polyethers; silylated amines; silazanes containing phenyl groups; 1,3-divinyltetramethyldisilazane; 1,1,3,3,5,5-hexamethylcyclotrisilazane; hexamethyldisiloxane; trimethylpentaphenyltrisiloxane DC 705; N,O-bis(trimethylsilyl)-acetamide, -trifluoroacetamide and -carbamate; and N-methyl-N-trimethylsilyltrifluoroacetamide. R1-SiX3 (1a-1d) R1R2-SiX2 (1e-1g) R1R2R3-SiX (1h) (Ra-Rb)n-SiX(4-n) (1i) X : (a) F, Br or alkoxy with over 2 C, (b) Cl or alkoxy, (c, e) F, Br, alkoxy or acetoxy, (d, f) Cl, (g) F, Br, alkoxy with over 2 C or acetoxy, (h) F, Br, I, alkoxy or acetoxy, (i) Cl, Br, alkoxy, methyl or acetoxy; R1(a) hydrocarbyl, (b) unhalogenated alkyl with functional group(s), (c, e) unfluorinated alkyl with over 2 C, allyl or a group containing aromatic group(s), (d, f) a group containing aromatic group(s) or chloroalkyl, (g) not fluoroalkyl, methyl or phenyl; R2alkyl or allyl, R1, R2, R3(h) not H or fluoroalkyl; Raperfluoroalkyl; Rban unhalogenated alkylene bridge, e.g. -CH2-, -CH2-CH2- or -(CH2)3-; and n : 0-2. An independent claim is also included for devices with a surface coated by this process.

Description

The The invention is based on a method and a device the genus of the independent Expectations.

Coating processes from the gas phase (chemical vapor deposition CVD) with silanes are, for example, from the DE 26 25 448 known. The deposition is usually supported by exposure to plasma or heat. The coating of silicon plates (wafers) from the gas phase with hexamethyldisilazane to improve paint adhesion has been used in the semiconductor industry for more than 15 years.

portable Elements in microelectromechanical components (MEMS) can stick to the solid structures. This sticking, called "sticking", can be done by so-called anti-stick layers can be prevented. The boarding of anti-stick layers from the liquid phase using standard methods is difficult to do because the components are caused by capillary forces stick when drying. It is well known to use silanes as a coating agent from the liquid Phase, e.g. Dimethyldimethoxysilane.

Farther it is also generally known that silanes are used as coating agents to use from the gas phase. This is done for the coating of micromechanical Structures with 1,1,2,2 tetrahydroperfluorooctyltrichlorosilane the gas phase to create an "anti-stick layer" on the article Mayer TM, Boer MP de, Shinn ND, Clews PJ, Michalske TA, "Chemical vapor deposition of fluoroalkylsilane monolayer films for adhesion control in MEMS ", J. Vac. Sci. Tech. B, pp. 2433-2440, 2000. The one from the State of the art for this purpose known substances the disadvantage of being particularly expensive.

Advantages of invention

The inventive method and the device according to the invention with the characterizing features of the independent claims the advantage of being particularly cost-effective feasible or to be producible and above also used for the coating of entire batches of wafers (batch capability). This reduces the throughput times of the corresponding components. Using the method according to the invention, antistick layers can generated on micromechanical components that stick the Prevent microstructures effectively. Since the application of the Layer from the gas phase takes place, the micro-mechanical is glued Structures during the coating is also prevented by capillary forces. coatings with silanes that are particularly temperature-resistant under protective gas integration into manufacturing processes in micromechanics or semiconductor technology.

According to the invention Generation of "anti-stick layers" on any component provided for example on micromechanical sensors and actuators. Special applications are e.g. the protection of movable micromechanical structures in gyroscopes or acceleration sensors against sticking. The components are produced in an unspecified form, e.g. as a silicon plate coated with applied micromechanical components (at wafer level), the coating being carried out from the gas phase. A variety of Components can be coated at the same time. Any materials can be used coated, they have to can only react with reactive silanes. Examples of surfaces are: Silicon dioxide, silicon, germanium, glass, aluminum oxide or aluminum, as far as the surfaces mentioned a sufficient number of superficial, free hydroxide groups exhibit.

By those in the subclaims listed activities are advantageous developments and improvements in the secondary claims specified method or the device possible.

drawing

embodiments the invention are illustrated in the drawing and in the description below explained in more detail. It demonstrate

1 a plant for performing the method according to the invention and

2 an inventive device with a coated surface.

Description of the embodiments

In 1 is an attachment 10 shown for performing the method according to the invention. The attachment 10 includes a vacuum chamber 11 , the vacuum chamber 11 a temperature control device 20 for heating or cooling the vacuum chamber 11 having. The vacuum chamber 11 also includes an inert gas connection 22 and one or more storage containers for the silanes 24 , For example, argon or nitrogen can be used as inert gases. The storage containers 24 for the silanes are designed to be evacuated and tempered and preferably each have a tempering and evacuation unit 25 on. The vacuum chamber 11 around still holds a vacuum pump set 26 for high vacuum and continue in 1 Plant control devices, not shown, for automated control of the plant components 20 . 22 . 24 . 25 . 26 . 28 , Another storage container 28 contains water for hydrolysis of the silanes. The components mentioned 20 . 22 . 24 . 25 . 26 . 28 the vacuum chamber 11 are possibly by in 1 Valves, not shown, connected in a suitable manner. The attachment 10 is made of corrosion-resistant material, e.g. stainless steel V4A, and is constructed to be vacuum-proof. The clean components to be coated, for example silicon plates with applied micromechanical components, are placed in the vacuum chamber 10 brought in. The resulting coated components 100 are also referred to below as the device according to the invention. The number of silicon plates that can be coated at the same time is only due to the size of the vacuum chamber 10 limited, ie several silicon plates can also be inserted in suitable holders (carriers).

The vacuum chamber is used to produce the non-stick layer 11 , in which the silicon plates are located, is first evacuated. After the evacuation, one or more times, for example five times, is flooded with dry, gaseous nitrogen and evacuated again to dry the components. Afterwards, in the evacuated state, at 500 mbar to 10E-7 mbar, the valve becomes a storage container 24 open. The silane acts on the components for a few seconds to a few hours. This creates an anti-stick layer. After coating, the excess silane and the possible hydrolysis products HF, HI, HCl, HBr, CH ₃ COOH, CH ₃ OH or CH ₃ CH ₂ OH are evacuated from the vacuum chamber 10 away.

Depending on the requirements of the coating to be produced, several such processing cycles can be used. After several cycles, for example three, between each of which is flooded with dry, gaseous nitrogen and evacuated again to remove residual silane, the vacuum chamber 10 ventilated and the devices according to the invention 100 are removed.

The Components to be coated are preferably used before coating cleaned. This can be done, for example, by treatment with an oxygen plasma happen. Suitable process conditions are a duration of treatment from 5 to 10 minutes, a treatment temperature of approx. 50 ° C, an oxygen flow from 200 sccm and a microwave power from 200W to 1000 W.

advantageously, the components to be coated are dried before coating. Drying of the components before coating can be done by heating them up 30 to 900 ° C be accelerated.

A stable coating results in particular when the surface of the components has a sufficient number of free hydroxide groups or other terminal, polar element-hydrogen groups so that the acting silanes can form a chemical bond with these groups. If the concentration of the hydroxide groups on the component surface is not sufficient, the coating can be removed from the additional storage container 28 Steam into the vacuum chamber 10 be given, for example for 3 min at a pressure of 10 mbar. Any excess water vapor is then pumped out again.

The Formation of the bond of the coating material on the to be coated surface can by warming the components to 20 to 400 ° C be accelerated. The silane concentration in the gas phase can by tempering the storage container set between –100 ° C and + 250 ° C be specified or by dosing valves.

The Deposition can be by radio frequency or radio frequency plasma supports become.

The Degree of coverage of the surface to be coated with coating material can by cooling to –200 ° C to + 20 ° C during the Deposition can be improved.

The on the surface of the components 100 deposited silanes can, after the deposition step and after the pumping step, remove excess silane by adding water vapor to the vacuum chamber 10 be completely hydrolyzed. The resulting hydrolysis products are then also pumped off. By coating the same silane several times with subsequent hydrolysis, denser, thicker layers can be achieved.

By interposing an in 1 Cold trap, not shown, between the vacuum chamber 10 and one in 1 The pump, not shown, for pumping off the silane, the excess silane can be recovered. Alternatively, excess silane is removed from the exhaust air behind the pump using an exhaust air purifier.

• 1. Ein zu beschichtendes Bauteil in Form eines Wafer wird mit Sauerstoffplasma gereinigt,
• 2. Der Wafer wird in eine Beschichtungsanlage eingebracht,
• 3. Es wird evakuiert, vorzugsweise bei einer Temperatur von 55°C bis zu einem Druck von < 1E-4 mbar,
• 4. Es erfolgt eine Oberflächenaktivierung, vorzugsweise mit Wasserdampf für 10 min bei 55°C bei einem Wasserpartialdruck von 20 mbar,
• 5. Es wird evakuiert, vorzugsweise bei einer Temperatur von 55°C bis zu einem Druck von < 1E-4 mbar,
• 6. Beschichtung für 12 min mit Phenyltriacetoxysilan bei 50°C,
• 7. Es wird evakuiert, vorzugsweise bei einer Temperatur von 55°C bis zu einem Druck von < 1E-4 mbar (Dauer ca. 20 min.),
• 8. Hydrolyse mit Wasserdampf, vorzugsweise für 12 min mit einem Wasserpartialdruck von 20 mbar bei 55°C,
• 9. Es wird evakuiert, vorzugsweise bei einer Temperatur von 55°C bis zu einem Druck von < 1E-4 mbar (Dauer ca. 20 min.),
• 10. Beschichtung für 27 min mit Phenyltriacetoxysilan bei 55°C,
• 11. Es wird evakuiert, vorzugsweise bei einer Temperatur von 55°C bis zu einem Druck von < 1E-4 mbar (Dauer ca. 20 min.),
• 12. Hydrolyse mit Wasserdampf, vorzugsweise für 12 min mit einem Wasserdampfpartialdruck von 20 mbar bei 55°C,
• 13. Es wird evakuiert, vorzugsweise bei einer Temperatur von 55°C bis zu einem Druck von < 1E-4 mbar (Dauer ca. 20 min.),
• 14. Fluten mit Stickstoff.

The process steps for an exemplary embodiment of the coating process are given below, steps 4, 5 and 10-13 being optional:

• 1. A component to be coated in the form of a wafer is cleaned with oxygen plasma,
• 2. The wafer is placed in a coating system,
• 3. It is evacuated, preferably at a temperature of 55 ° C to a pressure of <1E-4 mbar,
• 4. There is a surface activation, preferably with steam for 10 min at 55 ° C. at a water partial pressure of 20 mbar,
• 5. It is evacuated, preferably at a temperature of 55 ° C to a pressure of <1E-4 mbar,
• 6. coating for 12 min with phenyltriacetoxysilane at 50 ° C.,
• 7. It is evacuated, preferably at a temperature of 55 ° C. to a pressure of <1E-4 mbar (duration approx. 20 min.),
• 8. hydrolysis with water vapor, preferably for 12 min with a water partial pressure of 20 mbar at 55 ° C.,
• 9. It is evacuated, preferably at a temperature of 55 ° C. to a pressure of <1E-4 mbar (duration approx. 20 min.),
• 10. coating for 27 min with phenyltriacetoxysilane at 55 ° C.,
• 11. It is evacuated, preferably at a temperature of 55 ° C. to a pressure of <1E-4 mbar (duration approx. 20 min.),
• 12. hydrolysis with water vapor, preferably for 12 min with a water vapor partial pressure of 20 mbar at 55 ° C.,
• 13. It is evacuated, preferably at a temperature of 55 ° C. to a pressure of <1E-4 mbar (duration approx. 20 min.),
• 14. Flooding with nitrogen.

On with natural Micromechanical components covered with silicon dioxide result such a layer the wetting angle progressing against water 75 ° and retrogressive Has contact angle of 57 °. It acts as an "anti-stick layer" and is compared to usual in further processing Temperatures of> 420 ° C for more than resistant for one hour under protective gas.

In 2 is a device according to the invention 100 shown with a coated surface. Here is the surface 141 the device 100 with a coating 140 Mistake. The device 100 has in particular a substrate 110 on, which is provided according to the invention in particular as a silicon substrate. Furthermore, the device 100 usually a sacrificial layer 120 on which there is a functional layer 130 located. The functional layer forms an in 2 micromechanical structure, not shown, which is provided in particular movable. Because of the coating 140 the surface 141 occurs when a part of the movable micromechanical structure touches another part or the substrate 110 no liability. The method described above makes it possible to use a coated device 100 to generate that a thin layer 140 from 0.3 to 100 nm. This can be achieved, for example, by a monolayer coating.

Suitable silanes to be used in the process according to the invention are those from the following group with the general formula:
R ₁ -SiX ₃ , where X represents fluorine, bromine or an alkoxy radical having more than 2 carbon atoms and R _{1 represents} an at least hydrocarbon-containing radical, or
R ₁ -SiX ₃ , where X is chlorine or an alkoxy radical and R _{1 is} an unhalogenated alkyl radical with at least one functional group, the functional group having at least one hetero atom, or
R ₁ -SiX ₃ , where X is fluorine, bromine, an alkoxy radical or an acetoxy radical, R _{1 is} an unfluorinated alkyl radical having more than 2 carbon atoms, an allyl radical or a radical containing at least one aromatic compound and R _{2 is} an alkyl or an allyl radical is, or
R ₁ R ₂ -SiX ₂ , where X is fluorine, bromine, an alkoxy radical or an acetoxy radical, R _{1 is} an unfluorinated alkyl radical having more than 2 carbon atoms, an allyl radical or a radical containing at least one aromatic and R _{2 is} an alkyl or is an allyl residue, or
R ₁ -SiX ₃ , where X is chlorine and R _{1 is} a radical containing at least one aromatic or a chlorinated alkyl radical, or
R ₁ R ₂ -SiX ₂ , where X is chlorine and R _{1 is} a radical containing at least one aromatic or a chlorinated alkyl radical, or
R ₁ R ₂ -SiX ₂ , where X is fluorine, bromine, an alkoxy radical having more than 2 carbon atoms or an acetoxy radical and where R _{1 is} not a fluorinated alkyl radical, not a methyl radical and not a phenyl radical, or R ₁ R ₂ R ₃ -SiX , where X is fluorine, bromine, iodine, an alkoxy radical or an acetoxy radical and R ₁ , R ₂ , R _{3 is} not a hydrogen or a fluorinated alkyl radical, or
(R _a -R _b ) _n -SiX _(4-n) , where X is chlorine, bromine, an alkoxy radical, a methyl radical or an acetoxy radical, Ra for a perfluorinated alkyl radical, R _b for a non-halogenated alkylene bridge such as -CH ₂ - , -CH ₂ -CH ₂ - or - (CH ₂ ) ₃ - and n is a number from 0 to 2 is used.

The following are suitable:
Ausimont Galden 7007X (perfluoropolyether having alkoxysilane end groups), Ausimont Galden MF 407 (perfluoropolyether having Amidosilanendgruppen), Ausimont Fomblin Fluorolink S, acetoxypropyltrimethoxysilane, (3-acryloxypropyl) trimethoxysilane, Allyloxyundecyltrimethoxysilan, allyltrichlorosilane, aminopropyltriethoxysilane, aminopropyltrimethoxysilane, 1,3-bis (chlorodimethylsilyl) propane , 1,3-bis (chlorodimethylsilyl) butane, 1,3-bis (dichloromethylsilyl) propane, 1,3-bis (trichlorosilyl) propane, N-butylaminopropyltrimethoxysilane, 13- (chlorodimethylsilylmethyl) heptacosane, 11- (chlordimethylsilylmethyl) heptacosane, 13- (dichloromethylsilylmethyl) heptacosane, 11- (dichloromethylsilylmethyl) heptacosane, 13- (trichlorosilylylethyl) 11-hilanosilane (11) , 3 Chlorproyltrichlorsilan, 3 Chlorproyltrimethoxysilan, di-n-butyldimethoxysilane, di-n-butyldichlorosilane, di-n-butyldiethoxysilane, dimethylethoxysilane, dimethylmethoxysilane, dimethylchlorosilane, 1,3-divinyltetramethyldisilazane, Docosenyltriethoxysilan, dodecyltriethoxysilane, dodecyltrimethoxysilane, dodecyltrichlorosilane, phenethyltrimethoxysilane, phenethyltrichlorosilane, Ethylphenethyltrimethoxysilan , Perfluorodecyl-1H, 1H, 2H-2H-dimethylchlorosilane, perfluorodecyl-1H, 1H, 2H-2H-methyldichlorosilane, perfluorodecyl-1H, 1H, 2H-2H-trichlorosilane, perfluorodecyl-1H, 1H, 2H-2hylilanethil -1H, 1H, 2H-2H-triethoxysilane, perfluorodecyl-1H, 1H, 2H-2H-triacetoxysilane, hexadecyltrichlorosilane, 1,1,3,3,5,5 hexamethylcyclotrisilazane, hexame thyldisilazan, hexamethyldisiloxane, isobutyltrimethoxysilane, isobutyltrimethoxysilane, methacryloxymethyltrimethoxysilane, methacryloxymethyltriethoxysilane, 3-Metlloxypropyltrimethoxysilan, (2-methyl-2-phenylethyl) methyldichlorosilane, octadecyldimethylchlorosilane, octadecyltrichlorosilane, octadecyltrimethoxysilane, octadecyltriethoxysilane, octamethylcyclotetrasilazane, Octaphenyltetrasiloxan, Octaplienyltetrasilazan, octyldimethylchlorosilane, Octylinethyldichlorsilan, octylmethyldimethoxysilane, octyltrichlorosilane, octyltrimethoxysilane , octyltriethoxysilane, Pentafluorphenylpropyltrichlorsilan, Pentafluorphenyldimethylchlorsilan, Pentafluorphenylmethyldichlorsilan, Pentafluorphenylmethyldimethoxyrsilan, Pentafluorphenyltrichlorsilan, Pentafluorphenyltrimethoxysilan, Pentafluorphenyltriethoxysilan, Pentafluorphenylacetoxysilan, perfluorododecyl-1H, 1H, 2H-2H-dimethylchlorosilane, perfluorododecyl-1H, 1H, 2H-2H-methyldichlorosilane, perfluorododecyl-1H, 1H, 2H -2H-trichlorosilane, perfluorododecyl-1H, 1H, 2H-2H-trim ethoxysilane, perfluorododecyl-1H, 1H, 2H-2H-triethoxysilane, 4-Phenylbutyldimethylchlorsilan, 4-Phenylbutylmethyldichlorsilan, 4-Phenylbutylmethyldimethoxyrsilan, 4-Phenylbutyltrichlorsilan, 4-Phenylbutyltrimethoxysilan, 4-Phenylbutyltriethoxysilan, perfluorooctyl, 1H, 1H, 2H, 2H-dimethylchlorosilane, Perfluorooctyl-1H, 1H, 2H, 2H-methyldichlorosilane, perfluorooctyl-1H, 1H, 2H, 2H-trichlorosilane, perfluorooctyl-1H, 1H, 2H, 2H-trimethoxysilane, perfluorooctyl-1H, 1H, 2H, 2H-triethoxysilane 1H, 1H, 2H, 2H-triacetoxysilane, perfluorohexyl-1H, 1H, 2H, 2H-dimethylchlorosilane, perfluorohexyl-1H, 1H, 2H, 2H-methyldichlorosilane, perfluorohexyl-1H, 1H, 2H, 2H-trichlorosilane, 1H, 2H, 2H-trimethoxysilane, perfluorohexyl-1H, 1H, 2H, 2H-triethoxysilane, Triphenylmethyldimethylchlorsilan, Triphenylmethylmethyldichlorsilan, Triphenylmethylmethyldimethoxysilan, Triphenylmethyltrichlorsilan, Triphenylmethyltrimethoxysilan, Triphenylmethyltriethoxysilan, Undecyldimethylchlorsilan, Undecylmethyldichlorsilan, Undecylmethyldimethox ysilan, Undecyltrichlorsilan, Undecyltrimethoxysilan, Undecyltriethoxysilan, vinyltriethoxysilane, Trimethylpentaphenyltrisiloxane DC705, Tetramethyltetraphenyltrisiloxane DC704, methyltrimethoxysilane, methyltriethoxysilane, methyltriisopropoxysilane, methyltriacetoxysilane, methyltribromosilane, methyltrifluorosilane, dimethyldichlorosilane, dimethyldimethoxysilane, dimethyldiethoxysilane, dimethyldiisopropoxysilane, dimethyldiacetoxysilane, dimethyldibromosilane, Dimethyldifluorsilan, trimethylchlorosilane, trimethylmethoxysilane, trimethylethoxysilane, trimethylisopropoxysilane, trimethylacetoxysilane, trimethylbromosilane, trimethylfluorosilane, ethyltrimethoxysilane, ethyltriethoxysilane, ethyltriisopropoxysilane, ethyltriacetoxysilane, ethyltribromosilane, Ethyltrifluorsilan, diethyldichlorosilane, diethyldimethoxysilane, diethyldiethoxysilane, Diethyldiisopropoxysilan, diethyldiacetoxysilane, Diethyldibromsilan, Diethyldifluorsilan, triethylchlorosilane, triethylmethoxysilane, triethylethoxysilane, Triethylisopropoxysi lan, Triethylacetoxysilan, triethylbromosilane, triethylfluorosilane, propyltrimethoxysilane, propyltriethoxysilane, propyltriisopropoxysilane, propyltriacetoxysilane, Propyltribromsilan, Propyltrifluorsilan, propyltrichlorosilane, Dipropyldichlorsilan, dipropyldimethoxysilane, dipropyldiethoxysilane, Dipropyldiisopropoxysilan, Dipropyldiacetoxysilan, Dipropyldibromsilan, Dipropyldifluorsilan, tripropylchlorosilane, tripropylmethoxysilane, Tripropylethoxysilan, Tripropylisopropoxysilan, Tripropylacetoxysilan, Tripropylbromsilan, Tripropylfluorsilan, isopropyltrimethoxysilane, isopropyltriethoxysilane, Isopropyltriisopropoxysilan, Isopropyltriacetoxysilan, Isopropyltribromsilan, Isopropyltrifluorsilan, isopropyltrichlorosilane, diisopropyldichlorosilane, diisopropyldimethoxysilane, diisopropyldiethoxysilane, Diisopropyldiisopropoxysilan, Diisopropyldiacetoxysilan, Diisopropyldibromsilan, Diisopropyldifluorsilan, triisopropylchlorosilane, Triisopropylmethoxysilan, Triisopropylethoxysilan, Triisopropylisopropoxy silane, triisopropylacetoxysilane, triisopropylbromosilane, triisopropylfluorosilane, 3,3,3-trifluoropropyltrimethoxysilane, 3,3,3-trifluoropropyltriethoxysilane, 3,3,3-trifluoropropyltriisopropoxysilane, 3,3,3-trifluoropropyl trifluoropropyl trifluoropropyl trifluoropropyl triloxypropyl trifluoropropyl trifluoropropyl trifluoropropyl trifluoropropyl trifluoropropyl triloxypropyl 3,3-trifluoropropyltrifluorosilane, 3,3,3-trifluoropropyltrichlorosilane, di (3,3,3-trifluoropropyl) dichlorosilane, di (3,3,3-trifluoropropyl) dimethoxysilane, di (3,3,3-trifluoropropyl) diethoxysilane, Di (3,3,3-trifluoropropyl) diisopropoxysilane, di (3,3,3-trifluoropropyl) diacetoxysilane, di (3,3,3-trifluoropropyl) dibromosilane, di (3,3,3-trifluoropropyl) difluorosilane, tri ( 3,3,3-trifluoropropyl) chlorosilane, tri (3,3,3-trifluoropropyl) methoxysilane, tri (3,3,3-trifluoropropyl) ethoxysilane, tri (3,3,3-trifluoropropyl) isopropoxysilane, tri (3, 3,3-trifluoropropyl) acetoxysilane, tri (3,3,3-trifluoropropyl) bromosilane, tri (3,3,3-trifluoropropyl) fluorosilane, phenyltrichlorosilane, phenyltrimethoxysilane, phenyltriethoxysilane, phenyltriisopropoxysilane, phenyltriacetox enyltribromosilane, phenyltrifluorosilane, diphenyldichlorosilane, diphenyldimethoxysilane, di phenyldiethoxysilan, Diphenyldiisopropoxysilan, diphenyldiacetoxysilane, diphenyldibromosilane, Diphenyldifluorsilan, diphenylsilanediol, Pentafluorphenyltrichlorsilan, Pentafluorphenyltrimethoxysilan, Pentafluorphenyltriethoxysilan, Pentafluorphenyltriisopropoxysilan, Pentafluorphenyltriacetoxysilan, Pentafluorphenyltribromsilan, Pentafluorphenyltrifluorsilan, di (pentafluorophenyl) dichlorosilane, di (pentafluorophenyl) dimethoxysilane, di (pentafluorophenyl) diethoxysilane, di (pentafluorophenyl) diisopropoxysilan, Di (pentafluorophenyl) diacetoxysilane, di (pentafluorophenyl) dibromosilane, di (pentafluorophenyl) difluorosilane, naphthyltrichlorosilane, naphthyltrimethoxysilane, naphthyltriethoxysilane, naphthyltrüsopropoxysilane, naphthyltriacylilililililylbisaphthilyliloxililylisiloxysilane, carbainate, N, N-bis (trimethylsilyl) methylamine, N, O-bis (trimethylsilyl) trifluoroacetamide, N-methyl-N-trimethylsilyltrifluoroacetamide, trimethyliodosilane, N- (trimethylsilyl) dime thylamine, t-butyldimethylchlorosilane, t-butyldiphenylchlorosilane, dimethylphenylchlorosilane, 1,3-diphenyl-1,1,3,3-tetramethyldisilazane, diphenylmethylchlorosilane, 1,3-dimethyl-1,1,3,3-tetraphenyldisilazane, (pentafluorophoresilane) , Thexyldimethylchlorosilane, triphenylchlorosilane, 1,2-bis (chlorodimethylsilyl) ethane, di-t-butyldichlorosilane, perfluorodecyl-1H, 1H-dimethylchlorosilane, perfluorodecyl-1H, 1H-methyldichlorosilane, perfluorodecyl-1H-1-fluoro-decyl-1H-1-fluoro-decyl-1H-1-fluoro-decyl-1H-1-fluoro-decyl-1H-1 -Trichlorosilane, perfluorodecyl-1H, 1H-triethoxysilane, perfluorodecyl-1H, 1H-trimethoxysilane, perfluorododecyl-1H, 1H-dimethylchlorosilane, perfluorododecyl-1H, 1H-methyldichlorosilane, perfluorododecyl-1Hlhiloxil-1Hlhiloxysilane, 1H-trichlorodichlorosilane, 1fluorodilyl-1Hlhiloxysilane, , Perfluorododecyl-1H, 1H-trimethoxysilane, perfluorohexyl-1H, 1H-dimethylchlorosilane, perfluorohexyl-1H, 1H-methyldichlorosilane, perfluorohexyl-1H, 1H-trichlorosilane, perfluorhexyl-1H, 1H-triethoxysilane, perfluorohexyloxy -1H, 1H-dimethylchlorosilane, Per fluoroctyl-1H, 1H-methyldichlorosilane, perfluorooctyl-1H, 1H-triacetoxysilane, perfluorooctyl-1H, 1H-trichlorosilane, perfluorooctyl-1H, 1H-triethoxysilane, perfluorooctyl-1H, 1H-trimethoxysilane, 2H-1-perfluorodysylane, 2H 3H, 3H-dimethylchlorosilane, perfluorodecyl-1H, 1H, 2H, 2H, 3H, 3H-methyldichlorosilane, perfluorodecyl-1H, 1H, 2H, 2H, 3H, 3H-triacetoxysilane, perfluorodecyl-1H, 1H, 2H, 2H, 3H 3H-trichlorosilane, perfluorodecyl-1H, 1H, 2H, 2H, 3H, 3H-triethoxysilane, perfluorodecyl-1H, 1H, 2H, 2H, 3H, 3H-trimethoxysilane, perfluorododecyl-1H, 1H, 2H, 2H, 3H, 3H Dimethylchlorosilane, perfluorododecyl-1H, 1H, 2H, 2H, 3H, 3H-methyldichlorosilane, perfluorododecyl-1H, 1H, 2H, 2H, 3H, 3H-trichlorosilane, perfluorododecyl-1H, 1H, 2H, 2H, 3Hhoxysilane Perfluorododecyl-1H, 1H, 2H, 2H, 3H, 3H-trimethoxysilane, perfluorohexyl-1H, 1H, 2H, 2H, 3H, 3H-dimethylchlorosilane, perfluorohexyl-1H, 1H, 2H, 2H, 3H, 3H-methyldichlorosilane, per 1H, 1H, 2H, 2H, 3H, 3H-trichlorosilane, perfluorohexyl-1H, 1H, 2H, 2H, 3H, 3H-triethoxysilane, perfluorohexyl-1H, 1H, 2H, 2H, 3H, 3H-trimethoxysilane, perfluorooctyl-1 H, 1H, 2H, 2H, 3H, 3H-dimethylchlorosilane, perfluorooctyl-1H, 1H, 2H, 2H, 3H, 3H-methyldichlorosilane, perfluorooctyl-1H, 1H, 2H, 2H, 3H, 3H-triacetoxysilane, perfluorooctyl-1H 1H, 2H, 2H, 3H, 3H-trichlorosilane, perfluorooctyl-1H, 1H, 2H, 2H, 3H, 3H-triethoxysilane and perfluorooctyl-1H, 1H, 2H, 2H, 3H, 3H-trimethoxysilane.

in this connection it is necessary that the silanes have a reactive group, are vaporized without decomposition in high vacuum and a measurable vapor pressure to have.

Especially Suitable materials result in layers that are resistant under protective gas at over 300 ° C. This includes in particular the silanes from the following group: 1,1,3,3,5,5 hexamethylcyclotrisilazane, Octaphenyltetrasilazane, dimethyldiisopropoxysilane, dimethyldiacetoxysilane, Dimethyldibromosilane, dimethyldifluorosilane, phenyltrichlorosilane, phenyltribromosilane, Phenyltrifluorosilane, diphenyldichlorosilane, pentafluorophenyltrichlorosilane, Pentafluorophenyltrimethoxysilane, Pentafluorophenyltribromosilane, Pentafluorophenyltrifluorosilane and naphthyltrichlorosilane.

Claims (7)

Process for making a layer ( 140 ) on one surface ( 141 ), the layer ( 140 ) has non-stick properties and the surface ( 141 ) for coating is exposed to a silane, characterized in that as the silane a compound or a mixture of compounds from a group of compounds of the general formula R ₁ -SiX ₃ , where X is fluorine, bromine or an alkoxy radical having more than 2 carbon atoms and R _{1 represents} an at least hydrocarbon-containing radical, or R ₁ -SiX ₃ , where X represents chlorine or an alkoxy radical and R _{1 is} an unhalogenated alkyl radical with at least one functional group, or R ₁ -SiX ₃ , where X represents fluorine, Bromine, an alkoxy radical or an acetoxy radical, R _{1 is} an unfluorinated alkyl radical having more than 2 carbon atoms, an allyl radical or a radical containing at least one aromatic and R _{2 is} an alkyl or an allyl radical, or R ₁ R ₂ -SiX ₂ , where X is fluorine, bromine, an alkoxy radical or an acetoxy radical, R _{1 is} an unfluorinated alkyl radical having more than 2 carbon atoms, an allyl radical or at least one aromatic is the old radical and R _{2 is} an alkyl or an allyl radical, or R ₁ -SiX ₃ , where X is chlorine and R _{1 is} a radical containing at least one aromatic or a chlorinated alkyl radical, or R ₁ R ₂ -SiX ₂ , where X is chlorine and R _{1 is} a radical containing at least one aromatic or a chlorinated alkyl radical, or R ₁ R ₂ -SiX ₂ , where X is fluorine, bromine, an alkoxy radical having more than 2 carbon atoms or an acetoxy radical and where R _{1 is} not a fluorinated alkyl radical, not a methyl radical and not a phenyl radical, or R ₁ R ₂ R ₃ -SiX , where X is fluorine, bromine, iodine, an alkoxy radical or an acetoxy radical and R ₁ , R ₂ , R _{3 is} not a hydrogen or a fluorinated alkyl radical, or (R _a -R _b ) _n -SiX _(4-n) , where X stands for chlorine, bromine, an alkoxy radical, a methyl radical or an acetoxy radical, Ra for a perfluorinated alkyl radical, R _b for a non-halogenated alkylene bridge such as -CH ₂ -, -CH ₂ -CH ₂ - or - (CH ₂ ) ₃ - and n is a number from 0 to 2, or that a compound or a mixture of compounds from the group 13- (trichlorosilylmethyl) heptacosane, 11- (trichlorosilylmethyl) heptacosane, hexadecyltrichlorosilane, methyltriethoxysilane, methyltriacetoxysilane, is used as the silane Isopropyltrichlorosilane, 3,3,3-trifluoropropyltrimethoxysilane, 3,3,3-trifluoropropylt riethoxysilane, 3,3,3-trifluoropropyltriacetoxysilane, 3,3,3-trifluoropropyltrichlorosilane, dimethyldichlorosilane, di (3,3,3-trifluoropropyl) dichlorosilane, di (3,3,3-trifluoropropyl) dimethoxysilane, di (3,3, 3-trifluoropropyl) diethoxysilane, tri (3,3,3-trifluoropropyl) chlorosilane, silylated perfluoropolyethers, silylated amines, phenyl group-containing silazanes, 1,3-divinyltetramethyldisilazane, 1,1,3,3,5,5 hexamethylcyclotrisilazane, hexamethylpentiloxane tri-trimethylsilane 705, N, O-bis (trimethylsilyl) acetamide, N, O-bis (trimethylsilyl) trifluoroacetamide, N-methyl-N-trimethylsilyltrifluoroacetamide, N, O-bis (trimethylsilyl) carbamate. A method according to claim 1, characterized in that the silane is separated from the gas phase by means of a CVD process becomes. A method according to claim 1 or 2, characterized in that the surface ( 141 ) made of silicon dioxide, silicon, germanium, glass, aluminum oxide and / or aluminum is provided. Method according to one of the preceding claims, characterized in that the surface to be coated ( 141 ) is first dried, then gaseous silane is applied to the surface ( 141 ) acts for a period of time and that a hydrolysis product is subsequently removed. A method according to claim 4, characterized in that then again gaseous silane on the surface ( 141 ) acts and that the hydrolysis product is then removed. Contraption ( 100 ) with a surface coated by a method according to one of the preceding claims ( 141 ). Contraption ( 100 ) according to claim 6, characterized in that the device ( 100 ) is a micromechanical structure.