DE10325150A1 - Parameterized semiconductor composite structure with integrated doping channels, process for the production and use thereof - Google Patents

Abstract

For the exclusive realization of an ohmic contact, a known semiconductor composite structure parameterized in terms of its doping has vertical doping channels with a metal coating. In order to achieve maximum flexibility and at the same time maximum universality, the parameterized semiconductor composite structure according to the invention (TOSCA) has nanoscale pores (VP) as doping channels and a high-resistance coating made of electrically conductive material (ECM) also between the pores (VP) on the surface of the layer (EIL ) made of an electrically insulating material, whereby an electrical resistance is generated which supports a migration of additional charge carriers vertically in the semiconductor composite structure (PSC), but prevents horizontally between the equilateral electrodes (o, w). Essential parameters for setting the function of the semiconductor composite structure (PSC) relate to the design of the pores (VP) and the electrically conductive material (ECM). The pores (VP) can preferably be generated by ion irradiation with subsequent etching, the etching duration determining the pore depth and the pore diameter. The conductive material (ECM) can preferably consist of conductive nanoclusters (DNP) or moisture-sensitive fullerenes (MOSBIT). Applications relate to electronic, optoelectronic, hygroelectronic and sensory semiconductor components with active and passive, thermal, resistive, capacitive, ...

Description

The Invention relates to a parameterized semiconductor composite structure with at least one semiconductor substrate with selectable p or n doping and electrical conductivity and an adjacent layer of an electrically insulating Material with essentially vertically integrated doping channels, in which is an electrically conductive Material with selectable electrical conductivity is introduced, with charge carriers migrate in the semiconductor composite structure, and an electrical Contacting from several on the layer from one electrical insulating material and electrodes arranged on the semiconductor substrate, to a method of manufacturing and to an application thereof.

Semiconductor composite structures realized in modern semiconductor components, are from everyday Life without them. They are used in data processing, Communication, multimedia and in most everyday devices. Miniaturization of semiconductor components in integrated circuits enables today's computer and modern data communication. Farther semiconductor structures for high speed and Optoelectronics developed. The progressive miniaturization of semiconductor composite structures also leads to new effects. Due to the small dimensions of structures with a few nanometers, the direct quantization of the charge carriers can be observed in these structures become.

The state of the art on which the present invention is based is described in US Pat DE 101 21 011 A1 disclosed. A semiconductor composite structure consisting of a p-doped silicon substrate with an adjacent silicon dioxide layer is described, into which vertical doping channels in the form of continuous contact holes are integrated as bit line contacts. The contact holes are filled with a metal so that electrons can migrate into the silicon substrate. The known semiconductor structure is parameterized via doping implantation. In order to implement semiconductor components, for example DRAMs, contacting with electrodes (not shown further) is provided. Only simple ohmic contacts are realized with this known semiconductor composite structure. Other semiconductor components, in particular also those with a different physical functionality, cannot be implemented. All other similarly realized semiconductor structures known from the prior art are also inflexible with regard to their construction, their construction materials and their design, so that there is a great inconsistency and difference between the individual semiconductor structures. The same applies to the corresponding manufacturing processes.

The Task for The present invention is therefore a parameterized To further develop semiconductor structure of the type described at the outset, that a big one flexibility and universality regarding developable semiconductor components and their physical functionality. The semiconductor composite structure is intended to apply to all distinct semiconductor components nevertheless be uniform in their structure and the smallest possible differences exhibit. Nevertheless, the semiconductor composite structure should be simple and preferably economical be producible, what for a preferred manufacturing process should apply. trained Semiconductor components should then in their basic Construction only marginal Have differences.

As solution for this The task is the generic parameterized Semiconductor structure therefore characterized in that the doping channels as nanoscale Pores with selectable Distribution in the layer of an electrically insulating material as well as selectable Pore diameter, pore depth and pore shape are formed and that with the in the pores or with another, electrically conductive, but highly resistive Material also the surface producing the layer of an electrically insulating material one selectable electrical resistance, which is an essentially horizontal migration the load carrier between those on the layer of an electrically insulating material arranged electrodes prevented, but a substantially vertical Migration of the load carriers supported in the semiconductor composite structure, is documented.

In the semiconductor composite structure according to the invention, the desired flexibility with regard to the implementation of components is achieved exclusively by parameterizing the new structure, as a result of which a high degree of uniformity is produced between the components that can be implemented. The term "parameterization" is understood to mean the selectable setting of various parameters of the structure. The semiconductor composite structure according to the invention is universally applicable as a uniform starting material in a basic arrangement. Known effects can be brought about by the selectable setting of the internal structure parameters, such as layer thickness and substrate doping Due to the number and arrangement of the electrodes, different components can also be designed in an electrically coupled form, for example multi-stage logic components. By selecting the applied voltage, the current fed in or the prevailing temperature as external exposure parameters, the characteristics and the partial operating point of the semiconductor composite structure can be designed adjusted become. However, the essential parameters with a large influence on the functional behavior of the semiconductor composite structure in the invention are, in particular, the geometrical configurations and distribution of the pores and the electrically conductive coating. This influence even extends to the physical functionality of the semiconductor structure according to the invention, so that both an electronic and and an optoelectronic and / or a sensory behavior can also be expressed without the great uniformity of the semiconductor composite structure according to the invention being lost. The meaning of these parameters can be underlined if the semiconductor structure according to the invention is referred to as a “TOSCA” structure, TOSCA being the acronym from the name “Tracks in Oxide on Silicon for Charge Applications”. From this designation it is clearly evident that the pores (“tracks”) in the electrically insulating layer (especially oxide layer) are essentially new in the semiconductor structure according to the invention, by means of which charge carriers are extracted from or injected into the underlying substrate (especially silicon) The flexible functional behavior, in particular also the switching behavior, of the semiconductor composite structure according to the invention is distinguished in particular by the use of these additional charge carriers, in addition to the influenced charge carriers of the classic semiconductor composite structure, the additional charge carriers being able to be both complementary charge carriers and similar types The migration of the additional charge carriers in the semiconductor composite structure according to the invention is essential not only from the pores, but in particular also from the surface of the electrically insulating layer z wipe the individual pores and towards them. According to the invention, a covering made of electrically conductive material is also provided, which, however, due to its high impedance, which can be brought about by the material itself or by its distribution, has such a sufficiently great resistance between the electrodes that only the mentioned additional migration is made possible, Short circuits between the electrodes can be prevented. An alternative low impedance on the surface would cause a short circuit between the electrodes, so that the semiconductor composite structure according to the invention could not perform any function. On the other hand, a low impedance in the pores is acceptable, and the function that can be performed then depends directly on the exact magnitude of the resistance formed: if the resistance is small enough, an inverse semiconductor characteristic can be produced, which also occurs when pores with a very large diameter are formed , On the other hand, with a very low pore resistance, there is a direct short circuit between the surface and the conductive substrate, so that the surface potential is directly coupled to that of the conductive substrate through the pores. If the surface resistance is greater than the substrate resistance, which is the normal case, then the electronic function of the semiconductor composite structure according to the invention is essentially only determined by the substrate resistance, so that the function of a resistor which can be controlled by the base contact is achieved here.

In addition to the advantage of the comprehensive parameterization of the semiconductor composite structure according to the invention in order to achieve maximum flexibility of use, there is also the advantage of extreme radiation hardness. Components manufactured from the semiconductor composite structure are therefore resistant to the effects of radiation. When an energy-rich particle, for example from cosmic rays or the high-energy component of the solar wind, penetrates the narrow oxide layer of an FET structure, it creates a trace of charges along its path of motion, which then becomes electrically conductive. This can lead to breakdowns which can destroy the transistor due to the very high flowing currents and the associated temperature peaks. Therefore, efforts are being made to increase the radiation resistance of diodes and transistors for space travel, in reactor, military or high-performance environments (eg high-speed trains). One reason for the radiation resistance is to be seen in the original presence of a large number of the electrical conduction paths (typically approx. 10 ⁷ / cm ² ) formed by an electrically conductive material through the dielectric layer of the semiconductor composite structure according to the invention, so that a single further one radiation-induced path does not cause any significant change. Although such a new path is temporarily much more conductive than the ion paths of the semiconductor composite structure with its high-resistance filling, the additional, electrically conductive surface layer with its high resistance automatically acts as a current limiter, so that short-circuit currents are prevented. The only visible effect is a slight and temporary change in the current-voltage characteristic of the component. Even if such a breakthrough event leads to a permanent short circuit, it only means that the slight change in the characteristics mentioned persists. Due to the "buffering" of the internal circuits through the many high-resistance connections in the surface and the pores, a significant disadvantage of conventional structures is reliably avoided.

Semiconductor composite structures with an appearance similar to the invention are known from the prior art, but the functionality shows but the fundamental different meaning of the structure. However, the great flexibility and universality as in the semiconductor structure according to the invention is not achieved in any of the known structures. For example, from the US 6,201,291 B1 a composite structure is known which has metallic conductive tracks in an electrically insulating SiO ₂ layer which is arranged on a semiconductor body. However, this arrangement serves exclusively for the electrical connection of various components integrated in the semiconductor body. Diffusion barriers integrated in the SiO ₂ layer serve in particular to prevent charge carrier migration into the semiconductor body. Furthermore, a similar semiconductor composite structure is known from WO 02/08900 A2, in which conductive tracks are likewise applied to an electrically insulating layer on a semiconductor body. Here too, the guide tracks serve exclusively for the purely ohmic connection of electronic circuits integrated in the semiconductor body. Similar structures are also known for the vertical connection of multiple circuit levels. Furthermore, a similar composite layer structure is known from the field of biosensors (compare publication I by H. Lüth et al. "Biochemical sensors with structured and porous silicon capacitors", Materials Science and Engineering B69-70 (2000) 104-108, or publication II by MJ Schöning et al. "Recent advances in biologically field-effect transistors (BioFETs)", Analysts, 2002, 127, 1137-1151). In these publications, however, classic transistor concepts (e.g. FET) are networked in principle, which only differ from the classic concept by adding additives to the gate electrode by introducing it into an electrolyte with different pH values (ion-selective FET = ISFET) differ. The semiconductor composite structure claimed in the invention, however, is much more complex than the classic FET structure due to the parameterized pores and the coating between the pores. Furthermore, porous silicon is used in the publication II for sensor purposes in transistors. However, the irregular pores do not serve the same purpose as the pores in the invention. Rather, the surface of the known porous silicon is always coated with SiO ₂ and Si ₃ N ₄ , so that in this way a thin, folded capacitor structure (semiconductor-insulator-semiconductor) is formed which has a very large area. Deposited material, eg of a biological nature, on the surface of Si ₃ N ₄ changes its surface charge. As a result, the capacitance of the capacitor is increased while the voltage is fixed. This increase is either measured directly or used to drive a classic FET. Thus, in the known structure, the pores in the substrate material (Si) are not used for charge carrier injection or extraction.

The shape of the covering made of electrically conductive high-resistance material in and between the pores in the invention provides a number of different parameters which are responsible for the functional behavior of the semiconductor composite structure according to the invention. The distribution of the material plays a major role in achieving the specified potential relationships. Depending on the application, the electrically conductive material can have a continuous or structured flat or island or point-shaped distribution, mixed forms also being possible. In an embodiment of the semiconductor composite structure according to the invention, it is advantageously provided that the electrically conductive material is designed in the form of nanoclusters with a selectable size and is introduced into the pores with a selectable dispersion density and is applied to the layer made of an electrically insulating material. Clusters are relatively easy to manufacture and their size and composition can be easily varied. Given their distribution, predetermined potential relationships can be easily set. A larger distance between the clusters causes a large ohmic resistance, which in particular prevents the flow of short-circuit currents, whereas a high cluster density requires a low ohmic resistance with a high charge density, which enables optimal migration of charge carriers. The parameters when using clusters are their size, their composition and their distribution. The influence of the different parameters on the functional behavior of the semiconductor composite structure is easy for the person skilled in the art to understand and can be implemented in the various applications. A coating with particularly homogeneous properties results if, according to a next invention, all nanoclusters of the electrically conductive material are in the same selected size range. Due to this nanodisperse form of appearance, a homogeneous distribution of the clusters can easily be achieved without mutual contact, so that correspondingly homogeneous properties can also be produced. Any sufficiently high-resistance electrically conductive material is suitable for this. If the intrinsic conductivity is too high, ie if the material would cause short circuits when used directly, such as with metals, the conductivity can be specifically reduced by not applying the material homogeneously, but in the form of spatially separate dispenser clusters. Then the conductivity of the material by Schottky emission, tunneling or the like. causes and lies many orders of magnitude below the original conductivity in a homogeneous application. According to a further embodiment of the invention, it is particularly advantageous if the electrically conductive material is a dispersed metal (for example silver, tungsten, copper or aluminum copper), a semiconductor compound (for example a III / V semiconductor such as GaAs or a II / IV semiconductor such as CdS), a carbon allotrope (e.g. diamond, graphite, graphite-like carbon, amorphous carbon and fullerene (buckyballs and buckytubes)), an oxidic semiconductor (e.g. ZnO, TiO2, SnO), a conductive oxide ( for example ITO (indium tin oxide)) or a mixed form thereof. Ferrofluids can also be used due to their poorly conductive colloidal structure. Silver in particular is particularly easy to separate in cluster form and provides a large amount of additional charge carriers. Mixed forms of different metals combine the positive properties of the individual components. In the case of sufficiently low conductivity, that is to say sufficient high resistance, instead of dispersed, cluster-shaped conductor materials, continuous layers of very high resistance materials such as fullerite can also be used.

• • Herstellen des elektrisch leitfähigen Belags aus diskreten Palladium (Pd)-Nanokristallen: Da der Ohmsche Widerstand von Pd von der inkorporierten Wasserstoff-Konzentration abhängt, wird die Halbleiterverbund struktur nach der Erfindung in einen Wasserstoffsensor umgewandelt. Die Empfindlichkeit kann dabei noch durch das Aufbringen einer Schicht von ionenbestrahltem und geätztem Polycarbonat gesteigert werden, da dieses ebenfalls wasserstoff-sensorische Eigenschaften besitzt. Für Wasserstoffsensoren ergibt sich beispielsweise eine Anwendungsmöglichkeit bei Wasserstoff-Energiespeichern.
• • Verwendung eines hochohmigen, elektrisch leitfähigen Belags aus Buckminstertullerit (C₆₀): Da sowohl der Ohmsche Widerstand von C₆₀ als auch die Kapazität von Fullerit-Schichten von Umgebungsfeuchte, Temperatur und optischen Bestrahlungsfluss abhängen, kann die Halbleiterverbundstruktur nach der Erfindung durch Einsatz von Fullerit beispielsweise zu Feuchte-, Temperatur-, Alkohol-, Azeton- und/oder Photodetektoren führen. Die meisten dieser einzelnen Parameter können hierbei nicht nur getrennt, sondern auch gleichzeitig detektiert werden, da sie auf Grund unterschiedlichen Einflusses auf die jeweilige Bauelement-Charakteristik voneinander diskriminiert werden können. Zusätzlich ergibt sich hier noch die Möglichkeit, das entsprechende Bauelement auch als Spannungsquelle (Photozelle, „Hygro-Zelle", „Organo-Zelle") zu betreiben, weil es nach Lichteinstrahlung bzw. nach Beladung mit Feuchtigkeit oder organischen Gasen elektrische Spannungen von etwa + 0.5 V bzw. – 0.5 V aufbaut.
• • Ebenfalls besteht die Möglichkeit, die Leitfähigkeit des Fullerit-Belages durch Ionenbestrahlung lokal oder vollständig von n- zu p-Leitung umzuwandeln und so die Halbleiterverbundstruktur-Charakteristik durch Einbau zusätzlicher pn-Übergänge gezielt zu tunen. Kombinierte Temperatur- und Feuchtesensoren finden Anwendung bei sehr vielen elektrischen und elektronischen Geräten und Maschinen in Industrie und Haushalt in Feuchträumen, wie z.B. bei Waschmaschinen, Klimaaggregaten, Pumpen, auf Schiffen, in Schwimmbädern, chemischen Fabriken, usw..
• • Verwendung eines hochohmigen elektrisch leitfähigen Belags aus Kohlenstoff-Nanoröhrchen („Buckytubes"): Da sich sowohl der Ohmsche Widerstand als auch die Kapazität einer filzartigen Schicht aus Buckytubes bei deren mechanischer Deformation ändert, besteht hier die Möglichkeit, die Halbleiterverbundstruktur nach der Erfindung in Druck-, Akustik- und Bewegungssensoren anzuwenden. Derartige Sensoren finden z.B. Anwendungen in der Vakuum- und Hochdrucktechnik, Tonindustrie, Medizin, und Autoindustrie. Auf Grund der Möglichkeit, Buckytubes auch als Transistoren oder Lichtemitter einzusetzen, gibt es hier in Kombination mit der Halbleiterverbundstruktur nach der Erfindung noch weitere Anwendungen.
• • Inkorporation von unbestrahltem oder bestrahltem Phthalocyanin (Ptc)-Schichten in den elektrisch leitfähigen Belag. Damit kann die Halbleiterverbundstruktur nach der Erfindung je nach Auslegung der Ptc-Schichten als Sensoren für Alkohol, Methan, Erdgas u.ä. angewendet werden. Es ergeben sich Anwendungsmöglichkeiten in der Erdgasindustrie von Förderungs- bis Haushaltsphase.
• • Belegung der inneren Wand geätzter längerer, schräg implantierter Ionenspuren als Poren (vergleiche weiter unten) mit einem elektronenvervielfachenden Material wie z.B. Cäsiumjodid. Damit können die geätzten Ionenspuren als Photomultiplier eingesetzt werden, sodass mit der entsprechenden Halbleiterverbundstruktur eine Multikanal-Verstärkerplatte ausgebildet werden kann, wobei sämtliche Dimensionen um ein bis zwei Größenordnungen gegenüber den derzeit kommerziell erhältlichen Artikeln herabskaliert werden. Die durch die geätzten Ionenspuren in das leitende Substrat (Silizium-Kanal) auftreffenden Elektronenschwärme werden in der dazugehörigen Bauelementschaltung in analoge elektronische Pulse umgewandelt, sodass das diese dann als Strahlungsdetektor eingesetzt werden kann. Die dramatische Größenreduktion ist besonders bedeutsam für Satellitenanwendungen im Weltraum und für transportable Systeme. Die auf Grund der geringeren Dimensionen reduzierte mittlere freie Weglänge der Elektronen in den Ionenspuren als Elektronenvervielfacherkanäle ermöglicht es, die Ansprüche an das dazugehörige Vakuumsystem zu reduzieren, was zu weiterer Kosten- und Gewichtsersparnis führt. Weiterhin werden dadurch die Zeitdauern der elektronischen Pulse bis in den Picosekunden-Bereich hinein reduziert, sodass mit diesen neuartigen Detektortypen eine besonders schnelle Messelektronik realisiert werden kann.
• • Zusatz der sensorischen Werkstoffe in verkapselter Form. Wenn gleichzeitig auch die Kontaktierungen gut verkapselt werden, erreichen die herstellbaren Sensoren nach der Erfindung auch in flüssigen Medien, z.B. wässerigen Lösungen, gute Funktionsfähigkeit,. Damit kann der Anwendungsbereich wesentlich erweitert werden.
• • Inkorporation von flüssigkeitseingebetteten Ferrofluiden oder Magnetit-Nanopartikeln in geätzten Spuren als Poren. Da die Bindung der ferromagnetischen Kolloide zu Ketten oder höhendimensionalen Gebilden und deren Orientierung innerhalb der Ionenspuren empfindlich von extern angelegten Magnetfeldern abhängt, was seinerseits zu resistiven und kapazitiven Änderungen der Halbleiterverbindungsstruktur nach der Erfindung führt, ergibt sich hier die Möglichkeit der Konstruktion eines neuen Typs magnetischer Sensoren. In diesem Fall müssen die flüssigkeitsgefüllten Ionenspuren allerdings noch verkapselt werden. Das kann z.B. durch oberflächlichen Auftrag einer Schicht von Wachs-Nanopartikeln und deren anschließendes Aufschmelzen zu einem kontinuierlichen. hermetisch abschließenden dünnen Film realisiert werden. Auf Grund der geringen Dicke der Wachsschicht ist in diesem Fall zumindest eine hinreichende kapazitive Stromkopplung schon bei Niederfrequenz-Betrieb gewährleistet.
• • Von besonderem sicherheitstechnischen Interesse sind außerdem elektrisch leitfähige Beläge für schaltbare chemische, biologische und medizinische Erkennungs- und Abwehrsensoren, die sich in analoger Weise in das Bauelement mit der parametrierten Halbleiterverbundstruktur nach der Erfindung integrieren lassen. Die entsprechenden Beläge können selbst noch sehr hochohmig sein, was die Auswahl der in Frage kommenden Materialien erheblich erweitert.
• • Durch parallelen Einsatz geeigneter Sensormaterialien in einem gemeinsamen, die Halbleiterverbundstruktur nach der Erfindung aufweisenden Bauelement, kann eine gleichzeitige Messung vorgegebener Messgrößen (beispielsweise Temperatur, Druck, Feuchte, Licht oder Chemikalien) sowohl auf resistivem als auch auf kapazitivem Wege durchgeführt werden. Aus dem Stand der Technik (vergleiche Veröffentlichung III von J. Wang et al. „Dual amperometric-potentiometric biosensor detection system for monitoring organophosphorus neurotoxins", Analytica Chimica Acta 49 (2002) 197–203) ist lediglich eine alternative resistive oder kapazitive Messung mit zwei verschiedenen Messanordnungen bekannt, bei der bei Bedarf die beiden getrennten Messwege miteinander verglichen werden, um so über Koinzidenz eine bessere Ansprechempfindlichkeit zu erzielen.

Furthermore, the covering made of electrically conductive material also contributes significantly to the functional characteristics of the semiconductor structure according to the invention. If, according to a next embodiment of the invention, the electrically conductive material is supplemented or replaced by a sensor-active material with electrical conductivity for a special substance, in particular moisture or steam, a sensory functionality of the semiconductor composite structure can be pronounced, thereby opening up a completely new field of application for the semiconductor composite structure the invention is opened up. By replacing or supplementing the electrically conductive material, for example in the form of a metal or ITO coating, with sensor materials - here, too, any mixed forms within the additional material and together with the electrically conductive material - suitable environmental influences can lead to direct changes in the Lead switching state of the semiconductor composite structure according to the invention without the need for additional circuits. Examples can be given here

• • Manufacture of the electrically conductive coating from discrete palladium (Pd) nanocrystals: Since the ohmic resistance of Pd depends on the incorporated hydrogen concentration, the semiconductor composite structure according to the invention is converted into a hydrogen sensor. The sensitivity can be increased by applying a layer of ion-irradiated and etched polycarbonate, since this also has hydrogen-sensitive properties. For hydrogen sensors, for example, there is an application for hydrogen energy stores.
• • Use of a high-resistance, electrically conductive coating made of buckminster tullerite (C ₆₀ ): Since both the ohmic resistance of C ₆₀ and the capacity of fullerite layers depend on ambient humidity, temperature and optical radiation flow, the semiconductor composite structure according to the invention can be achieved by using fullerite lead for example to humidity, temperature, alcohol, acetone and / or photodetectors. Most of these individual parameters can not only be detected separately, but can also be detected at the same time, since they can be discriminated from one another on the basis of different influences on the respective component characteristics. In addition, there is also the possibility here of operating the corresponding component as a voltage source (photocell, “hygro cell”, “organo cell”), because after exposure to light or after being loaded with moisture or organic gases, electrical voltages of approximately + 0.5 V or - 0.5 V builds up.
• • There is also the possibility of converting the conductivity of the fullerite coating locally or completely from n to p lines by ion irradiation and thus to tune the semiconductor composite structure characteristic by incorporating additional pn junctions. Combined temperature and humidity sensors are used in a large number of electrical and electronic devices and machines in industry and households in damp rooms, such as washing machines, air conditioning units, pumps, on ships, in swimming pools, chemical factories, etc.
• • Use of a high-resistance electrically conductive coating made of carbon nanotubes (“Buckytubes”): Since both the ohmic resistance and the capacity of a felt-like layer made of Buckytubes change during their mechanical deformation, there is the possibility here of printing the semiconductor composite structure according to the invention Such sensors are used, for example, in vacuum and high-pressure technology, the sound industry, medicine and the automotive industry. Due to the possibility of using buckytubes as transistors or light emitters, there is a combination with the semiconductor composite structure according to Invention still further applications.
• • Incorporation of unirradiated or irradiated phthalocyanine (Ptc) layers in the electrically conductive covering. Depending on the design of the Ptc layers, the semiconductor composite structure according to the invention can thus be used as sensors for alcohol, methane, natural gas and the like. be applied. There are possible applications in the natural gas industry from the production to the budget phase.
• • Covering the inner wall of longer, obliquely implanted ion traces than pores (see below) with an electron-multiplying material such as cesium iodide. This allows the etched ion traces to be used as photomulti Plier are used so that a multi-channel amplifier plate can be formed with the corresponding semiconductor composite structure, with all dimensions being scaled down by one to two orders of magnitude compared to the articles that are currently commercially available. The electron swarms struck by the etched ion traces in the conductive substrate (silicon channel) are converted into analog electronic pulses in the associated component circuit, so that these can then be used as a radiation detector. The dramatic size reduction is particularly significant for satellite applications in space and for portable systems. The mean free path length of the electrons in the ion tracks, which are reduced due to the smaller dimensions, as electron multiplier channels, makes it possible to reduce the demands on the associated vacuum system, which leads to further cost and weight savings. Furthermore, the time periods of the electronic pulses are reduced down to the picosecond range, so that particularly fast measuring electronics can be implemented with these new types of detectors.
• • Addition of the sensory materials in encapsulated form. If at the same time the contacts are well encapsulated, the sensors that can be produced according to the invention also achieve good functionality in liquid media, for example aqueous solutions. This means that the area of application can be expanded considerably.
• • Incorporation of liquid-embedded ferrofluids or magnetite nanoparticles in etched traces as pores. Since the binding of the ferromagnetic colloids to chains or height-dimensional structures and their orientation within the ion traces depends sensitively on externally applied magnetic fields, which in turn leads to resistive and capacitive changes in the semiconductor connection structure according to the invention, there is the possibility of designing a new type of magnetic sensors , In this case, the traces of liquid filled with ions still have to be encapsulated. This can be done, for example, by superficially applying a layer of wax nanoparticles and then melting them into a continuous one. hermetically sealed thin film can be realized. In this case, due to the small thickness of the wax layer, at least sufficient capacitive current coupling is guaranteed even in low-frequency operation.
• • Of particular interest in terms of safety technology are also electrically conductive coatings for switchable chemical, biological and medical detection and defense sensors, which can be integrated in an analog manner into the component with the parameterized semiconductor composite structure according to the invention. The corresponding coverings themselves can still be very high-resistance, which considerably expands the selection of the materials in question.
• • By using suitable sensor materials in parallel in a common component having the semiconductor composite structure according to the invention, a simultaneous measurement of predetermined measurement variables (for example temperature, pressure, humidity, light or chemicals) can be carried out both resistively and capacitively. From the prior art (see publication III by J. Wang et al. "Dual amperometric-potentiometric biosensor detection system for monitoring organophosphorus neurotoxins", Analytica Chimica Acta 49 (2002) 197-203), only an alternative resistive or capacitive measurement is included Two different measuring arrangements are known, in which, if necessary, the two separate measuring paths are compared with one another in order to achieve better response sensitivity via coincidence.

The principle of operation of a possible biological sensor with the parameterized semiconductor composite structure according to the invention can, for example, do the following respectively. Light from special fluorescent molecules, e.g. of conjugated polymers bound to the structure is suppressed by certain integrated molecules ("quencher"). There comes a suitable biological Molecule, e.g. an antibody, in contact with a quencher, so it connects with that and leaves with together the fluorescent molecule, which then begins to glow. By Choice of a fluorescence molecule in one for the electrically insulating layer, suitable wavelength range and through the use of silicon oxynitride layers (hereinafter referred to as "SiON") exploit the photoluminescence of SiON, so that an increased light emission uses, which further increases the biological detection sensitivity. The overall efficiency of the photocell is increased accordingly. After detection has taken place, however, this sensor type must pass Bind to new quencher molecules can be reactivated. For implementation in components with the semiconductor composite structure According to the invention, conically etched ion traces of larger outer diameter (>> 1 μm) proposed in the SiON, on the inner walls of which the fluorescent molecules are bound can and to which the biological molecules within their cell structure temporarily can dock. On the other hand, the tapered structure of the tracks that at the interface to the substrate layer, for example silicon, the fluorescent light generated is concentrated so that a high photo efficiency can be achieved can.

Out the last description also shows the importance of the second large parameter group. This concerns the dimensioning and distribution of the Pores in the electrically insulating layer. Can be varied alongside the distribution density, the pore diameter, the penetration depth the pores in the layer (the pores can be continuous or designed as a "blind hole") and the pore shape (the pores can run cylindrical or conical. It is clear to the person skilled in the art that by appropriate interpretation of these parameters different migration relationships result in that too fundamentally other functions of the composite structure. Other parameters of the Semiconductor composite structure according to the invention are in the range of electrically insulating layer and the semiconductor substrate. To another continuation of the invention it is advantageous if the electrically insulating material is a silicon compound, in particular silicon oxynitride, or a carbon allotrope or is a polymer, in particular photoresist or Kapton. SiON shows in particular the special photoluminescent properties already mentioned, which in use results in vigorous light emission Electroluminescence leads. The carbon allotropes include also those with fullerenes that can be doped in a special way, as well as diamond and diamond-like Layers. Photoresist or Kapton are more conventional Isolation layers that are easy to structure. Furthermore, after a next one Design of the invention, the semiconductor substrate or low-oxygen silicon Czochralski silicon. Especially with the latter is his high compensation capability for oxygen significant.

Farther the substrate can be doped accordingly according to the functional specifications his.

Lots the semiconductor composite structure according to the invention as electrical conductive, but highly resistive Covering and / or pore filling used materials have sensor properties not only for a physicochemical Size, but for several from that. Therefore, when in doubt, it can be difficult to get one of a single semiconductor composite structure according to the invention in one Component emitted electrical signal clearly a certain Assign source. In these cases is it according to one next Invention design advantageous if different parameterized Areas, in particular with regard to the choice of the electrically conductive material, which each cover spectra of different physico-chemical parameters, are arranged adjacent to a common semiconductor substrate. So you can several with different toppings provided semiconductor composite structures simultaneously as sensors used and their signals are compared. Also it is important to check the sign of the corresponding sensor signal to watch out for. The combined rubbers can then be provided with appropriate evaluation electronics, so that multifunction sensors ("artificial sense organs") are created in this way a whole spectrum of different physico-chemical parameters at the same time and with high reliability are able to cover. A simple example is a composite semiconductor structure according to the invention with silver cluster layers, these are only sensitive to light. A semiconductor composite structure according to the invention electrically conductive, but high-resistance fullerite layers, however, is sensitive to Light, moisture, alcohol and acetone vapors, whereby moisture leads to positive, Light and organo fumes however lead to negative signals. So if a fullerene TOSCA, i.e. a MOSBIT structure a negative Signal and at the same time a silver cluster TOSCA structure no signal supplies, the source can be clearly identified with organo vapors incidence of light as the cause is ruled out. Conversely, at simultaneous response of both sensors with certainty accept; the additional Presence of organic vapors is still possible but not sure. A third, used here for comparison purposes Sensor, e.g. Semiconductor composite structure with SnO coating, can then be consulted for decision. If this responds, then is out Incident light also contains alcohol vapor. Furthermore it is possible, other parameters, for example the pore density, in some areas to change. Further parameterizations are the exemplary embodiments in the special description part and the table in the figures.

• I. Aufbringen einer Schicht aus einem elektrisch isolierenden Material auf ein p- oder n-dotiertes Halbleitersubstrat
• II. Erzeugung von Dotierungskanälen in der Schicht aus dem elektrisch isolierenden Material
• III. Aufbringen eines Belages aus einem elektrisch leitfähigen Material in den Dotierungskanälen und auf der Schicht aus dem elektrisch isolierenden Material und
• IV. Aufbringen von Elektroden auf der Schicht aus dem elektrisch isolierenden Material und dem Halbleitersubstrat.

The method for producing a parameterized semiconductor composite structure according to the invention basically comprises the following method steps

• I. Applying a layer of an electrically insulating material to a p- or n-doped semiconductor substrate
• II. Generation of doping channels in the layer from the electrically insulating material
• III. Applying a coating of an electrically conductive material in the doping channels and on the layer of the electrically insulating material and
• IV. Application of electrodes on the layer of the electrically insulating material and the semiconductor substrate.

The individual process steps can be carried out using methods known per se. In particular, method step I, in which an electrically insulating oxide layer can be produced by conventional thermal oxidation, can, however, also preferably be carried out by means of a plasma chemical vapor deposition at a Pro temperature in a temperature range from 200 ° C to 300 ° C. The moderate temperature range in this deposition technique, in which the material is separated from the plasma state, leads to considerable energy savings. The exact stoichiometric composition of the preferred light-emitting SiON layer to be produced can be determined by precise setting of the plasma parameters, which determines both the etchability that may be required and the luminescence yield. Furthermore, no vacuum and clean room technology is required to produce the semiconductor composite structure according to the invention, which also has a cost-reducing effect. The doping channels in method step II can be produced conventionally, for example, by masked or mask-free lithography methods, for example using an electron beam, lower structural limits in the range of 100 nm being achieved here. Process step II for forming doping channels as nanoscaled pores with a selectable distribution in the layer made of an electrically insulating material and a selectable pore diameter, pore depth and pore shape can therefore preferably be carried out by irradiating the layer made of the electrically insulating material with high-energy heavy ions, the pore parameters being determined by the choice of radiation parameters can be set. The use of ion radiation makes it particularly easy to manufacture nanoscale pores with high precision and to pre-assemble them on an industrial scale. On the one hand, the ion radiation can convert the non-conductive material into conductive material in the region of the pores, for example when converting electrically non-conductive carbon with an sp ₃ structure (diamond structure) into electrically conductive carbon with an sp ₂ structure (graphite-like structure) ). Furthermore, according to an advantageous further development of the invention in the method, it can also be provided that in step II to form doping channels, an etching of the ion traces following the irradiation is carried out, the pore parameters being adjustable by the choice of the etching parameters, in particular the etching time. The pore parameters can thus be set both by the radiation and by the etching.

When the structure composed of an electrically conductive substrate and an electrically insulating layer, for example SiO ₂ / Si or SiON / Si structures, is irradiated with high-energy heavy ions, the choice of the ion type and the ion energy depends on the trace geometry to be achieved by the subsequent etching for the pores to be produced. It should be noted at this point that the pore production by ion irradiation, for which a particle accelerator is required, can be carried out surprisingly inexpensively by a stock production of semifinished products - in particular also compared to conventional production processes. For example, assuming costs of EUR 1000 per hour of beam time on a typical heavy ion accelerator with a beam flow of 10 ⁹ ions / s for irradiating a wafer with a diameter of 10 cm to produce 10 ⁷ ion tracks per cm ^{2, the} costs are only about 20 cents. With very heavy projectile ions (e.g. Xe, Au) and high energies (approximately hundreds of MeV to a few GeV), subsequent etching in suitable materials such as SiON can produce pores with an almost cylindrical geometry, with projectile ions of medium atomic number (e.g. Ar, Kr) and Lower energies (approximately dozen from MeV to approximately 100 MeV), the etching structures become needle-shaped (conical) or funnel-shaped. With very light projectiles it is not possible to etch out special structures. Depending on the application, the ion irradiation can either cover the entire surface or be structured two-dimensionally with the help of lithography. The structuring can provide, for example, an assignment of the pores to the electrodes to be attached on the layer made of an electrically insulating material. The etchant during the subsequent etching of the ion traces is usually hydrofluoric acid, the choice of the etchant concentration and duration depends on the material to be etched (for example SiO2, SION) and its precise chemical composition. Depending on the application, the ion trace can be etched or varied only as a needle-shaped cavity by varying the etching duration over its entire length, ie down to the substrate boundary layer. the ion track can be opened to different diameters. If the pores do not penetrate completely through the electrically insulating layer, a charge carrier injection takes place primarily into the electrically insulating layer, which leads to an increased light yield, particularly in the case of SiON. This concept is therefore particularly suitable for optoelectronic components. The etching duration thus determines the functioning of the structures developed therefrom, for example as npn or pnp transistors, via pore length and diameter. Therefore, in the semiconductor composite structure according to the invention, typical structures can be produced for the first time differently than by doping with foreign atoms.

The electrically conductive but high-resistance layer according to method step III, in particular onto the SiO ₂ or SiON layer and into the etched ion traces, can be applied, for example, by silver vapor deposition or chemical deposition of silver or another conductive material. It is also possible to separate it from the liquid phase using an appropriately adjusted colloid. When applying the covering in its conductivity must be set in such a way that on the one hand it enables good charge injection through the ion traces into the underlying Si, but on the other hand it has a non-negligible resistance on the surface, so that multiple contacts on the surface are possible without a short circuit between these contacts ("partial conductivity") Suitable conductive layers are, for example, disperse dispersed nanoclusters made of metal or conductive oxides, such as indium tin oxide (ITO) - the latter because of the transparency of ITO especially for optical applications. Depending on the application, the partially conductive layer can either the whole Finally, in process step IV, the semiconductor composite structure produced according to the invention is contacted and electrically connected at the locations strategically suitable for the desired mode of operation in a known manner Geometric arrangement of the pores, the conductive layers and the electrical contacts can thus result in a transition from simple digital circuit technology to multi-stage logic components.

Analogous to a combined semiconductor composite structure according to the invention with areas changed It is according to one parameter Process design also advantageous if in the process step III different rubbers from an electrically conductive Material in the doping channels and applied to the layer of electrically insulating material become. So you can in their parameters almost arbitrarily chosen and continuously and / or discontinuous semiconductor composite structures after the Invention are made.

On particular advantage of the parameterized semiconductor composite structure The invention is its considerable universality and flexibility that shaping a wide variety of components, including different ones physical operating principles, but still to a uniform Appearance. The new semiconductor composite structure is a uniform starting material for the practical nanometric realization of electronic and optoelectronic Suitable basic components such as resistance, current control resistor, Capacity, Diode, S-tunnel diode, thermoresistor, thermocapacity, optoresistor, Opto capacity Photodiode, bipolar (photo) transistor, photocell, light-emitting diode, hygrow resistor, Hygro capacitance, hygrodiode, Hygro cell, organogas resistance, organogas capacity, organogas diode, and organogas cell. An advantageous application of the parameterized semiconductor composite structure according to the invention is therefore characterized by a function as an electronic, active or passive component, in particular in training as a transistor, capacitor, resistor or Resonant circuit (high-frequency component), as an optoelectronic component, especially in training as a light emitter or light detector, as a hygroelectronic component, especially in training as a hygro cell, or as a sensory component, especially in training as a sensor cell or as a combination of these components, where the respective functional expression through the parameterization the semiconductor composite structure, in particular by the expression of the doping channels in the form of pores and the covering made of the electrically conductive material in the form of nanoclusters, as well as by a partial setting of the working point by varying the exposure parameters and is formed by the arrangement of the electrodes. Special embodiments are given in the special description section.

Basically, the semiconductor composite structure according to the invention shows not only passive but also active properties. In the case of implemented electronic components with passive properties, existing signals are modified with the usual attenuation of the signals, in the case of active components signals are generated and amplifier functions are generated. The semiconductor composite structure according to the invention shows a real transistor effect. Depending on its design, the semiconductor composite structure can thus advantageously be used both as an active and as a passive electronic component. There are combinations of parameters (for example in the case of: non-photoluminescent SiON on p-Si; ion traces etched for 50 s, with Ag clusters) that lead to characteristics with strongly negative resistances. This _{combination of} parameters is photoresistive, which means that incidence of light means setting up the I _v / V _vw characteristic, so that the gain increases sharply. From a critical light intensity, for example between daylight and light from a 1 mW laser, the resistance becomes positive and the gain breaks down. Due to the very steep characteristics, the component is extremely sensitive to the smallest differences in light intensity, so that the construction of a very sensitive photometer is an option. Further possible applications are analog and digital bidirectional amplifiers with the semiconductor composite structure according to the invention as an attenuator in the sense of a tunnel or Esaki diode using the falling part of the characteristic curve. This bidirectionality represents a particular advantage: with a conventional transistor, a circuit only works in one direction, for example from the microphone to the loudspeaker. With a component based on the semiconductor composite structure according to the invention, the reverse direction from the loudspeaker to the microphone can also be used. Another application that arises from the active amplifier function is, for example, discontinued Oscillator.

forms of training To further understand the invention, the following are based on the schematic Figures closer explained. It shows

1 the basic structure of the semiconductor composite structure with continuous pores in cross section,

2 an SEM recording according to 1 manufactured semiconductor composite structure,

3 the basic structure of the semiconductor composite structure with conical pores,

4 an equivalent network of a component from the semiconductor composite structure,

5 a characteristic curve of the semiconductor composite structure as a resistance at room temperature

6 a characteristic curve of the semiconductor composite structure as resistance at elevated ambient temperature

7 a characteristic field of the semiconductor composite structure as an npn transistor

8th a characteristic field of the semiconductor composite structure as a pnp transistor

9 a characteristic field of the semiconductor composite structure as an npn phototransistor

10 a characteristic field of the semiconductor composite structure as a photodiode

11 a characteristic field of the semiconductor composite structure as a moisture sensor,

12 a family tree of the semiconductor composite structure as well

13 a parameterization table for the semiconductor composite structure
and the following figures circuit arrangements for an application of the semiconductor composite structure according to the invention with conductive nanoclusters (TOSCA) as

14 thermo-capacitive sensor oscillator,

15 optocapacitive remote control of a local oscillator,

16 Low frequency noise source,

17 optoresistive sensor,

18 optocapacitive sensor,

19 optocapacitive remote control of a bandpass,

20 optocapacitive remote control of a low pass,

21 optocapacitive remote control of a high pass,

22 Signalfrequenzvervielfacher,

23 Amplitude modulator,

24 astable multivibrator,

25 thermoresistive sensor,

26 Photo transistor stage,

27 optoelectronic nanocluster radiator,

28 resonant circuit
and the following figures circuit arrangements for an application of the semiconductor composite structure according to the invention with moisture-sensitive fullerite (MOSBIT) as

29 frequency digital gas sensor,

30 analog-conductive gas sensor amplifier,

31 analog gas-current conversion amplifier,

32 analog-resistive gas sensor amplifier,

33 analog gas-voltage conversion amplifier,

34 Gas voltage cell and as

35 solar cell

It has already been mentioned above that the semiconductor composite structure according to the invention can be aptly named "TOSCA" as an acronym for "tracks in oxide on silicon for charge applications". Analogously, a TOSCA structure with moisture-sensitive fullerene as an electrically conductive but high-resistance coating on the electrically insulating layer can be aptly characterized with the acronym "MOSBIT", which is the abbreviation of the term: "MOisture Sensoring with Buckminsterfullerene in Ion Tracks "acts. A limitation of the invention by the use However, this does not result in the extension of these terms to specific embodiments that led to the choice of terms.

The 1 shows schematically in cross section a parameterized semiconductor composite structure PSC with a semiconductor substrate SCS and an adjacent layer EIL made of an electrically insulating material. The semiconductor composite structure PSC is electrically contacted via three electrodes o, v, w (electrically equivalent to “connections” or “taps”). Vertically oriented doping channels in the form of nanoscale pores VP are integrated in the layer EIL made of an electrically insulating material. The distribution of the pores VP, the pore diameter, the pore depth and the pore shape can be freely selected. In the selected exemplary embodiment, cylindrical pores VP are shown in groups of different sizes, which are assigned to the upper electrodes o, w, which completely penetrate the layer EIL made of an electrically insulating material and thus enable simple charge migration, in particular into the semiconductor substrate SCS. The additional charge carriers are made available by an electrically conductive material ECM, which in the exemplary embodiment shown is applied in the form of disperse nanoparticles DNP into the pores VP and also onto the surface of the layer EIL made of electrically insulating material. The disperse nanoparticles DNP create a high-resistance resistance gradient between the electrodes o, w, so that a short circuit is prevented here. An essentially vertical migration of the additional charge carriers through the layer EIL made of an electrically insulating material is, however, possible. The pores VP with the dispensed nanoparticles NP represent a particularly large number of acicular semiconductor junctions in the semiconductor composite structure PSC, so that the semiconductor composite structure PSC structured according to the invention can be referred to as a “multi-tip diode arrangement”. This can be represented electrically by equivalent circuit diagrams with corresponding diode arrangements.

In the 2 a picture with a scanning electron microscope SEM is shown. The layer made of an electrically insulating material, here SiO ₂ , can be seen from above, into which a multiplicity of pores of different diameters are integrated in a dispenser distribution. The dark central area in the pores shows the semiconductor substrate underneath, here Si. In the exemplary embodiment shown, the pores are thus etched through. The white border around the pores shows their conical shape. The white dots seen in the SEM image are clusters made of an electrically conductive material, here silver, which are applied in the pores and also on the surface of the layer made of an electrically insulating material.

The 3 shows in analogy to 1 schematically shows a cross section of a parameterized semiconductor composite structure PSC, but here with tapered pores VP, which do not completely penetrate the layer EIL made of an electrically insulating material. With this concept, the additional charge carriers migrate increasingly into the layer made of an electrically insulating material. If this is, for example, photosensitive silicon oxynitride SiON, when the semiconductor composite structure PSC is irradiated with light there is an increased photoemission which can be used accordingly in measurements.

Theoretical description of the structure. First attempts have been made to physically justify the functioning of the new semiconductor composite structure according to the invention. For this purpose, an equivalent network was created 4 accepted. This allows the current paths to be followed, for example, from contact o to contacts w or v. The current can then either flow directly to w through the surface coverage or it can go through the tracks below into the silicon below. The traces can be described by a resistor R _o and a diode D _ox with a leakage current resistor R _ox . An enrichment zone, depletion zone or inversion zone can build up below the oxide layer. In the vicinity of the applied voltages, the existence of such a layer (referred to as a "channel") depends on the leak properties of the oxide, which can be described by the spinning resistance R _t and the diode parameters D _ox and R _ox . For low-resistance R _t , D _{With ox} and R _ox , little or no charge control is possible due to the field effect via C _ox . The channel resistance is described by R _c . Under certain bias conditions, the current towards connection v will overcome a potential barrier from the channel to the base silicon What is described by an additional diode D _L with a leakage resistance R _L. For comparison, conventional, known MOS capacitances without traces are represented in place of the diode D _L by a voltage-dependent capacitance, for example by the transition from an inversion layer to the base -Silicon is given because no direct current flows here, in the event that contacts o and w have voltage of different polarities, an additional pn junction on the silicon surface must be taken into account.

With this approach, the contributions of the individual components can be estimated. The track resistance R _{t is} of particular interest here because its size controls the presence or absence of layers with free charge carriers, that is to say the inversion or enrichment layers and consequently also the values R _c , D _L and R _L. The detailed description of the I _v -V _vw characteristic after this The model delivers results that at least qualitatively agree with the observations. Two cases have to be distinguished here, the one with type 1 or type 2 have been identified. With the guy 1 the traces are only slightly etched, so that R _{t is} very large. Type 2 corresponds to the case of smaller R _t , which can be realized experimentally by longer trace etching times. With the guys 1 and 2 the roles of electrons and holes are reversed, so that complementary characteristics occur. It can be shown that, depending on the applied voltages, the component can either be viewed as a weakly non-linear resistor or as a pn junction induced by a lateral field. There are often dramatic asymmetries in the characteristics, as well as kinks and / or steep increases. Depletion as well as inversion and enrichment zones can be created depending on the applied voltage below the surface contacts, so that it is possible to switch currents from one contact to the other. At certain operating points, the semiconductor connection structure according to the invention has negative differential resistances, so that it has the properties of a pnp (in type 1 ) or npn- (for type 2 ) Transistor receives. So far there have been power gains up to one factor 24 observed. The transistor effect is reproducible and often accompanied by point light emission.

According to the equivalent network 4 derived theory provides the relationship for the current / voltage characteristic in a first approximation: I O = β (R / R + 2) (V v + V w ) (V O - V w ) where β = C _ox μ W / L, R the resistance ratio R _c / R _t , μ the charge carrier mobility, W the channel width, L the channel length, and V _v , V _o , V _w those applied to the contacts v, o and w Tensions are. This relationship applies only to small voltages V _v because R was assumed to be constant. With increasing voltage V _v , however, R _c decreases due to the charge generated by the field effect in the channel, which leads to the observed non-linearities. In the case of very strongly negative voltages V _ow , the current / voltage characteristic for the type becomes due to the increasing field effect 1 parabolic, so that it approximates that of the classic MOS transistor.

In the 5 a characteristic curve of the semiconductor composite structure measured at room temperature RT is shown with an etching duration of 3 min in the form of a controllable semiconductor resistor. When measuring the current-voltage characteristic, a typical I, U characteristic curve of a junction semiconductor component is shown. According to its temperature dependence 6 can be detected, which shows the characteristic of the semiconductor composite structure with an etching time of 3 min at an ambient temperature of 60 ° C. The expected flattening of the characteristic can be clearly seen. At this point it should be noted that control tests were carried out with similar semiconductor composite structures, but without pores. These do not show the described characteristic of the semiconductor composite structure according to the invention, but only that of a normal high-resistance, which indicates the presence of electrically conductive pores, particularly in the formation of etched ion traces, in the electrically insulating layer in the semiconductor composite structure according to the invention ,

The 7 shows a characteristic diagram of an npn transistor produced from a semiconductor composite structure with an etching time of 7 min (etching in hydrogen fluoride solution HF 7 min), in which the two electrodes o, w and on the aluminum-coated underside the electrode v. on the silver-coated top side of the semiconductor composite structure are contacted with silver conductive adhesive. In the present application, the control circuit is implemented between the electrodes v, w and the load circuit of the npn transistor between the electrodes o, w. With increasing voltage U _ow in the load circuit, the load current I _{o also increases} and can also be controlled by means of control voltage - U _vw . This npn transistor function is the same as in the 7 given simple diode equivalent circuit diagram of the structure, which basically consists of three multi-tip diode complexes. Analogously, according to 8th Comparable laboratory tests were carried out on a semiconductor composite structure with an etching time of 10 min in an extended load current range, with the result that, with unchanged contacting of the semiconductor composite structure, a pnp transistor was only produced and produced by the extended etching time. According to the equivalent circuit diagrams, the semiconductor composite structure bipolar transistors are also made up of three multi-tip diode complexes, taking the polarity into account as a first approximation.

In the 9 A characteristic field of a semiconductor composite structure is shown in the form of an NPN phototransistor with a light-active, electrically insulating layer, for example SiON. To support the light activity, the etching time HF was only 5 min, so that conical, non-continuous pores were created. The flow of light is denoted by Φ. The increase in the characteristic curves with increasing light radiation can be clearly seen. The 10 shows a characteristic field over the capacitive change of a semiconductor composite structure with an etching time HF of 10 min in the form of a photodiode as a function of the incident light power. This can be determined in a photo sensor by measuring the variable voltage be communicated.

In the 11 is a characteristic field of a semiconductor composite structure in the form of a moisture sensor with a high-resistance, electrically conductive material as a coating on the layer of electrically insulating material and pore filling made of fullerite (MOSBIT). The characteristics have a diode-shaped course. The influence of the moisture is marked with "G". The increase in the characteristic curves can be seen clearly with increasing moisture. In the presence of moisture, a current flows even without voltage being applied, which means that the semiconductor composite structures with fullerite generate voltages and moisture themselves The reason for this can be attributed to an environmentally dependent contact potential difference between fullerite and silicon as a substrate 11 the influence of light on the characteristic curves is also shown. The flow of light is denoted by Φ. It can be seen that light lowers the characteristic curves so that the influences of moisture and light can be clearly distinguished from one another. A characteristic field similar to light results for the semiconductor composite structure as an organogas sensor. Gases such as alcohol or acetone lower the characteristics in a similar way to light. However, the two gases cannot be distinguished from one another with a semiconductor composite structure with fullerite alone. To make this possible, a coincidence measurement must take place with a further, for example alcohol-specific detector (for example semiconductor composite structure with high-resistance SnO coating and pore filling).

The 12 shows a representation, the genealogical relation of the different possible semiconductor composite structures that can be generated by different parameterization to each other in a family tree, as far as they are already known or under development. The various open arrows show the main area in which future extensions are still to be expected. In the 13 the freely selectable parameters of the semiconductor composite structure are summarized in a table. The appropriate materials and their areas of application are also entered. The table corresponds to the current state of knowledge and shows room for future expansion.

The in the 5 and 6 The temperature dependency of the semiconductor composite structure 3min HF shown can also be very easily as a frequency-determining element (thermal capacitance) in the functional and application circuit in accordance with its internal capacitance (thermocapacity) and internal parallel resistance (thermal resistance) in a semiconductor composite structure 10min HF 14 , which shows the electrical circuit diagram of a thermocapacitive sensor oscillator with a semiconductor composite structure 10min HF, installed and used in practice. The frequency of this sensor oscillator is a direct, digital measure of the temperature to be measured. In terms of measurement technology, an oscillator frequency difference of 190 kHz can be determined between room temperature and 80 ° C ambient temperature in the corresponding analyzer spectrum. When using a semiconductor composite structure of 7 min HF there is an oscillator frequency difference of 201 kHz and when using a semiconductor composite structure 5 min HF there is an oscillator frequency difference of 188 kHz, so that a temperature sensor sensitivity of approximately 3 kHz / ° C results for this temperature measuring range. In the 15 the circuit diagram of an opto-capacitive remote control of a local oscillator is shown. The photo effect of a semiconductor composite structure with an etching time HF of 10min is applied to the construction of a photo-npn transistor stage. If the direct current flow is prevented in this structure (idling), the measurement results with regard to the capacitive change when coupling in optical radiation are in accordance with 10 on the electrodes o, w and v, w confirmed on the order of magnitude. This special property of the optoelectronic semiconductor composite structure is according to 15 technically applied in the functional circuit for opto-capacitive control of a local oscillator with the frequency f = 3.88756 MHz by means of a semiconductor composite structure 10min HF. In a frequency trimming range of approximately one percent capacitive change that is kept small, there is a frequency change of this local oscillator at a fundamental frequency f = 3.88756 MHz by Δf = 16.5 kHz.

The 16 shows the application of the semiconductor composite structure with a predetermined etching duration (selectable here and in the circuit arrangements according to the following figures) to a low-frequency noise source, high local electric field strengths in the semiconductor composite structure causing random, frequent electrical discharges and recombinations and consequently a measurable noise voltage at the taps produce. Like the measurements according to 9 show, changes in the coupling of optical radiation Φ, λ, the slope in the I, U characteristic field, that is, the differential electrical resistance of the semiconductor composite structure (opto-resistance) and enables according 17 the application as an optoresistive sensor. The change in the injected optical radiation causes a current change in the circuit and thus a corresponding voltage change available at the electrodes. According to the application 18 as an optocapacitive sensor, the semiconductor composite structure is operated as a photodiode by means of the series capacitance C ₁ in an optocapacitive change without direct current, and the coupled-in optical radiation to be measured is applied to the two Taps implemented in a countable digital frequency. In addition to the communication technology application according to 15 are also communication technology applications of the semiconductor composite structure for optocapacitive remote control of a bandpass 19 , according to a low pass 20 and a high pass 21 for the advantageous complete suppression of disturbing external electromagnetic influences can be practically implemented by this type of optocoupling.

When setting the I, U operating point according to an application as a signal frequency multiplier 22 By means of direct voltages applied to the semiconductor structure as a bipolar transistor in the area of large curvature of the characteristic curve, the injected signal voltage is distorted and its frequency, the signal frequency, is multiplied and made available at the two electrodes. The application according to 23 uses the operating point setting according to 9 to multiply two signal voltages in an additive mixture with one another, which corresponds to the practical, simple implementation of an amplitude modulator, the modulation voltage then being available at the two electrodes for further processing in communication technology. If you select the I, U operating point when using a semiconductor composite structure as an npn tunnel transistor, the tunnel effect characterized by an arc characteristic is set at approx. 2V / 1 mA (S tunnel diode). This then results when the semiconductor composite structure is connected in accordance with 24 the application as an astable multivibrator in the tunnel effect and the next development stages with this semiconductor component are a radio frequency oscillator and a bidirectional high-frequency amplifier.

The further application after 25 in temperature measurement technology shows a semiconductor composite structure transistor set as an operating point as a thermal resistor, i.e. a thermoresistive sensor, the output voltage of which is a direct measure of the coupled-in temperature at the two electrodes. The application after 26 represents a phototransistor stage, the output voltage at the two electrodes is a direct measure of the injected radiation, as in accordance with 9 was typically measured for the components from the semiconductor composite structure. The application after 27 relates to a semiconductor composite structure SiON / n-Si (II) and SiON / p-Si (I), both of which are supplied with electrical power at approx. 15 mA between the connections o, w, as color-optoelectronic nanocluster radiators whose respective wavelength λ = 4 · n · I depends on the refractive index n and on the respective length or depth I of the pore channel. For example, the sample (I) with approx. 150 radiating nanoclusters generates approx. 1.4 nW optical radiation flow. In this application, the respective semiconductor composite structure reacts with the additional coupling of optical radiation flow like a photodiode, so that in the next development step, the construction of an optoelectronic transceiver for communication technology applications based on the semiconductor composite structure can be realized. In the 28 shows an application of the semiconductor composite structure as a frequency-variable resonant circuit. By varying the applied voltage (voltage-controlled nanocluster capacitance), an oscillating circuit that can be tuned at least in the lower high-frequency range between 500 MHz and 800 MHz can be implemented. Thus, the semiconductor composite structure according to the invention is also radio frequency capable.

The following 29 to 35 relate to MOSBIT structures, ie to fullerite as an electrically conductive material on the surface of the layer of electrically insulating material and in the pores semiconductor composite structures according to the invention (TOSCA). In analogy to the incidence of light, a MOSBIT structure generates a voltage even in the presence of moisture, which disappears when the moisture drops because the moisture-sensitive sensor material C ₆₀ (fullerite) was applied thinly on the surface and not as a thick layer, which are the diffusion processes of water vapor in the fullerene reduced to a minimum so that this sensor has a very short response time of less than one second. The cause of the voltage of such a MOSBIT hygro cell can be attributed to an environmentally dependent C ₆₀ / Si contact voltage. This property can be used to build moisture voltage drivers. If the hygro cell is exposed to the vapors of alcohol or acetone instead of moisture, this also creates a voltage, but the opposite sign is then used. This allows moisture to be distinguished from organogas vapors. Like the TOSCA structures with nanoclusters, the MOSBIT structures also show resistive, conductive and capacitive sensor behavior. Accordingly, both moisture-resistive sensors, moisture-conductive sensors and moisture-capacitive sensors can be produced, for example. With the latter, it makes sense to convert the capacitive changes into frequency changes. Finally, the change in conductivity of a MOSBIT element can also be used to generate moisture flow converters.

In the 29 a frequency digital gas sensor is shown, in which the nanocluster basic structure MOSBIT, coated with fullerite (C60) and operated without direct current, controls the oscillator circuit in the MHz range with its gas-dependent capacity. Thus, the oscillator frequency available at both taps is a direct digital measure of the gas concentration.

In the 30 An analog-conductive gas sensor amplifier is shown, which converts the change in the conductance of the MOSBIT nanocluster base structure coated with C60 depending on the gas concentration directly into a measurable voltage and offers it at the two taps.

In the 31 an analog gas-current conversion amplifier is shown, which converts the regenerative short-circuit current in the MOSBIT nanocluster basic structure coated with C60, depending on the gas concentration, directly into a measurable voltage and offers it at the two taps.

In the 32 an analog-resistive gas sensor amplifier is shown, which converts the change in resistance of the C60 surface-coated nanocluster basic structure depending on the gas concentration directly into measurable voltage and offers it at the two taps

In the 33 an analog gas-voltage conversion amplifier is shown, which offers the open circuit voltage, which is dependent on the gas concentration and which is generator-dependent, of the MOSBIT nanocluster basic structure coated with C60 at the two taps with a low resistance.

In the 34 shows a gas voltage cell with the C60 surface-coated nanocluster basic structure MOSBIT, which can be used with a larger gas concentration for power supply using the voltage taps.

In the 35 shows a solar cell with the C60 surface-coated nanocluster basic structure MOSBIT, which can be used when coupling in optical radiation both as a radiation receiver and as a power supply using the voltage taps. There is a shift in the characteristics when light falls (symbolized by ϕ). With the same incident light intensity, the shift is wavelength-dependent (symbolized by λ), so that it is possible to build new types of compact optical spectrometers without moving parts.

In summary seen on the above, extensive, but not as a final range of semiconductor components to be considered the great flexibility of the semiconductor composite structure recognized according to the invention and its uniform application form become. Together with the new semiconductor structure according to the invention can therefore also create a new, inexpensive class of simply and controllable semiconductor components are provided. The production of these structures needed apart from a large accelerator for ion trace production, only wet chemistry without clean room and vacuum conditions.

DNP

nanoparticles

ECM

electrical conductive material

EIL

adjoining Layer of electrically insulating material

MOSBIT

Moisture Sensoring with Buckminsterfullerene in Ion Tracks

O, v, w

Electrode, connection

PSC

Semiconductor composite structure

SCS

Semiconductor substrate

TOSCA

tracks in Oxide on Silicon for Charge Applications

VP

pore

Claims (13)

Parameterized semiconductor composite structure with at least one semiconductor substrate with selectable p or n doping and electrical conductivity and an adjacent layer made of an electrically insulating material with essentially vertically integrated doping channels into which an electrically conductive material with selectable electrical conductivity is introduced, with charge carriers in the Migrate semiconductor composite structure, and an electrical contact from a plurality of electrodes arranged on the layer of an electrically insulating material and the semiconductor substrate, characterized in that the doping channels as nanoscale pores (VP) with a selectable distribution in the layer (EIL) of an electrically insulating material and selectable pore diameter, pore depth and pore shape and that with the introduced into the pores (VP) or with another, electrically conductive but highly resistive material (ECM ) also the surface of the layer (EIL) made of an electrically insulating material with generation of a selectable electrical resistance which prevents a substantially horizontal migration of the charge carriers between the electrodes (o, w) arranged on the layer (EIL) made of an electrically insulating material , but supports an essentially vertical migration of the charge carriers in the semiconductor composite structure (PSC). Parameterized semiconductor composite structure according to claim 1, characterized in that the electrically conductive material (ECM) in the form of nanoclusters (DNC) with a selectable size and with a selectable size Dispersion density introduced into the pores (VP) and onto the layer (EIL) is applied from an electrically insulating material. Parameterized semiconductor composite structure according to Claim 2, characterized in that all nanoclusters (DNC) of the electrically conductive material (ECM) are in the same selected size range. Parameterized semiconductor composite structure according to a of claims 1 to 3, characterized in that the electrically conductive material (ECM) a dispersed metal, a semiconductor compound Carbon allotrope, an oxidic semiconductor, a conductive oxide or a mixture of them. Parameterized semiconductor composite structure according to a of claims 1 to 4, characterized in that the electrically conductive material (ECM) from one for a special substance sensor-active material with electrical conductivity added or is replaced. Parameterized semiconductor composite structure according to claim 5, characterized in that the special substance moisture or steam. Parameterized semiconductor composite structure according to a of claims 1 to 6, characterized in that the electrically insulating Material (EIL) a silicon compound, in particular silicon oxynitride, or a carbon allotrope, especially diamond, or a polymer, especially photoresist or Kapton. Parameterized semiconductor composite structure according to a of claims 1 to 7, characterized in that the semiconductor substrate (SCS) low-oxygen silicon or Czochralski silicon. Parameterized semiconductor composite structure according to a of claims 1 to 8, characterized in that different parameterized Areas, especially with regard to the choice of electrically conductive material (ECM), each of which covers spectra of different physico-chemical parameters are arranged on a common semiconductor substrate (SCS). Method for producing a parameterized semiconductor composite structure with at least one semiconductor substrate with selectable p or n doping and electrical conductivity and an adjacent layer of an electrically insulating Material with essentially vertically integrated doping channels, in which is an electrically conductive Material with selectable electrical conductivity is introduced, the complementary charge carrier in the semiconductor substrate migrate, and an electrical contact from several the layer of an electrically insulating material and the semiconductor substrate arranged electrodes, in particular according to one of claims 1 to 8, with the procedural steps: I. Apply a layer made of an electrically insulating material onto a p- or n-doped Semiconductor substrate II. Generation of doping channels in the Layer of the electrically insulating material III. apply a coating of an electrically conductive material in the doping channels and on the layer of the electrically insulating material and IV. Application of electrodes on the layer of the electrically insulating Material and the semiconductor substrate, characterized, that process step I by means of a plasma chemical vapor deposition is carried out at a process temperature in a temperature range from 200 ° C to 300 ° C and / or that the method step II for the formation of doping channels as nano-scaled pores (VP) with selectable Distribution in the layer (EIL) from an electrically insulating Material as well as selectable Pore diameter, pore depth and pore shape by irradiation of the Layer (EIL) of the electrically insulating material with high energy Heavy ions performed is, the pore parameters by the choice of radiation parameters are adjustable. A method according to claim 10, characterized in that in process step II to form doping channels etching after irradiation Ion traces is carried out the pore parameters being selected by the choice of the etching parameters, in particular the etching time, are adjustable. A method according to claim 10 or 11, characterized in that in process step III different coverings from one electrically conductive Material in the doping channels and applied to the layer of electrically insulating material become. Application of a parameterized semiconductor composite structure with at least one semiconductor substrate with selectable p or n doping and electrical conductivity and an adjacent layer made of an electrically insulating material with essentially vertically integrated doping channels into which an electrically conductive material with selectable electrical conductivity is introduced, the complementary one Migrate charge carriers into the semiconductor substrate, and an electrical contacting of several electrodes arranged on the layer of an electrically insulating material and the semiconductor substrate, in particular according to one of claims 1 to 9, characterized by a function as an electronic, active or passive component, in particular in one Training as a transistor, capacitor, resistor or resonant circuit, as an optoelectronic component, in particular in a training as a light emitter or light detector, as a hygroelectronic component, in particular in a training as a hygro cell, or as a sensory component, in particular in a training as a sensor cell, or as a combination of these components, the respective functional characteristics being determined by the parameterization of the semiconductor composite structure (PSC ), in particular through the shape of the doping channels in the form of pores (VP) and the covering made of the electrically conductive material (ECM) in the form of nanoclusters (DNC), as well as through a partial adjustment of the working point by varying the exposure parameters and by arranging the Electrodes (o, v, w) is formed.