DE102022133587A1 - OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH AN ORDERED PHOTONIC STRUCTURE - Google Patents

Abstract

An optoelectronic semiconductor component (10) comprises a first GaN-containing semiconductor layer (101) of a first conductivity type, a second GaN-containing semiconductor layer (102) of a second conductivity type, and an active zone (108). The first semiconductor layer (101), the active zone (108), and the second semiconductor layer (102) are arranged one above the other to form a semiconductor layer stack. The optoelectronic semiconductor component (10) further comprises an ordered photonic structure (110) arranged adjacent to the second GaN-containing semiconductor layer (102), and a mode pusher layer (115) arranged on a side of the active zone (108) facing the first GaN-containing layer (101). A mode pusher material of the mode pusher layer (115) has a refractive index smaller than 2.4, and a lattice constant c of the mode pusher layer (115) is in a range of 0.99 * a ≤ c ≤ 1.01 * a, where a corresponds to the lattice constant of GaN.

Description

Surface-emitting lasers, i.e. laser devices in which the generated laser light is emitted perpendicular to a surface of a semiconductor layer arrangement, can be used in a wide range of applications, for example in AR ("augmented reality") applications or in 3D sensor systems, for example for facial recognition or distance measurement in autonomous driving, or for general lighting purposes such as for display devices.

A photonic crystal surface emitting laser (PCSEL) has a photonic crystal or an ordered photonic structure near an active zone for radiation generation.

In general, efforts are being made to improve such optoelectronic semiconductor components.

The present invention is based on the object of providing an improved optoelectronic semiconductor component.

According to embodiments, the object is achieved by the subject matter of the independent patent claims. Further developments are defined in the dependent patent claims.

An optoelectronic semiconductor component comprises a first GaN-containing semiconductor layer of a first conductivity type, a second GaN-containing semiconductor layer of a second conductivity type, and an active zone. The first semiconductor layer, the active zone, and the second semiconductor layer are arranged one above the other to form a semiconductor layer stack. The optoelectronic semiconductor component further comprises an ordered photonic structure arranged adjacent to the second GaN-containing semiconductor layer, and a mode pusher layer arranged on a side of the active zone facing the first GaN-containing layer. A mode pusher material of the mode pusher layer has a refractive index of less than 2.4, and a lattice constant c of the mode pusher layer is in a range 0.99 * a ≤ c ≤ 1.01 * a, where a corresponds to the lattice constant of GaN.

For example, the mode pusher layer can be arranged between the active zone and the first semiconductor layer. According to further embodiments, the mode pusher layer can also be arranged on a side of the first semiconductor layer facing away from the active zone.

For example, the mode pusher layer can have a superlattice structure that includes layers of the mode pusher material and Al _x In _y Ga _1-xy N layers, with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x + y < 1, which are each arranged alternately. The layers of the mode pusher material have a different composition than the Al _x In _y Ga _1-xy N layers.

A layer thickness of the mode pusher layer can be less than 800 nm.

A distance of the mode pusher layer to the active zone can be less than 1000 nm.

According to embodiments, the mode pusher material may comprise a material having the composition Al _x In _1-x N hat with 0.77 ≤ x ≤ 0.87.

For example, the mode pusher material may comprise porous GaN.

According to embodiments, a position of the mode pusher layer is selected depending on the refractive index of the mode pusher layer such that an intensity of an optical mode within the semiconductor layer stack at an interface of the mode pusher layer facing the active zone is less than 40% of the maximum intensity of the optical mode. In this way, absorption of the generated electromagnetic radiation by the mode pusher layer can be suppressed.

Furthermore, a position of the mode pusher layer can be selected depending on the refractive index of the mode pusher layer such that an intensity of an optical mode within the semiconductor layer stack at a boundary surface of the mode pusher layer facing away from the active zone is less than 10% of the maximum intensity of the optical mode. In this way, absorption of the generated electromagnetic radiation by the mode pusher layer can be further suppressed.

The optoelectronic semiconductor component can further comprise a substrate on the side of the first semiconductor layer. Furthermore, the first semiconductor layer can comprise a first cladding layer with a refractive index that is greater than the refractive index of the mode pusher material. The first cladding layer can be arranged between the mode pusher layer and the substrate.

For example, a layer thickness of the first cladding layer can be greater than 1000 nm.

According to further embodiments, the first semiconductor layer may further comprise a second cladding layer between the mode pusher layer and the active region. The refractive index of the second cladding layer may be smaller than the refractive index of GaN and larger than the refractive index of the mode pusher layer.

For example, a layer thickness of the second cladding layer can be less than 1000 nm.

According to further embodiments, the ordered photonic structure can be arranged between the active zone and the second semiconductor layer. The second semiconductor layer can have a larger refractive index than the average refractive index of the ordered photonic structure.

For example, the optoelectronic semiconductor component may further comprise a two-dimensional electron gas at an interface between the first semiconductor layer and the mode pusher layer.

For example, the optoelectronic semiconductor component can be designed as a surface-emitting semiconductor laser.

• 1A zeigt eine schematische Querschnittsansicht eines optoelektronischen Halbleiterbauelements gemäß Ausführungsformen.
• 1B zeigt eine räumliche Verteilung des Brechungsindex und der elektrischen Feldstärke bei einem optoelektronischen Halbleiterbauelement gemäß Ausführungsformen.
• 1C veranschaulicht den Brechungsindex und eine sich ausbreitende Mode bei einem optoelektronischen Halbleiterbauelement gemäß Ausführungsformen.
• 2 zeigt eine schematische Querschnittsansicht eines optoelektronischen Halbleiterbauelements gemäß Ausführungsformen.

The accompanying drawings are intended to provide an understanding of embodiments of the invention. The drawings illustrate embodiments and together with the description serve to explain the same. Further embodiments and many of the intended advantages will become apparent from the detailed description below. The elements and structures shown in the drawings are not necessarily drawn to scale with respect to one another. Like reference numerals refer to like or corresponding elements and structures.

• 1A shows a schematic cross-sectional view of an optoelectronic semiconductor device according to embodiments.
• 1B shows a spatial distribution of the refractive index and the electric field strength in an optoelectronic semiconductor device according to embodiments.
• 1C illustrates the refractive index and a propagating mode in a semiconductor optoelectronic device according to embodiments.
• 2 shows a schematic cross-sectional view of an optoelectronic semiconductor device according to embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part of the disclosure, and in which specific embodiments are shown for purposes of illustration. In this context, directional terminology such as "top", "bottom", "front", "back", "over", "on", "in front of", "behind", "fore", "backward", etc., refers to the orientation of the figures just described. Since the components of the embodiments can be positioned in different orientations, the directional terminology is for purposes of explanation only and is not in any way limiting.

The description of the embodiments is not limiting, since other embodiments exist and structural or logical changes may be made without departing from the scope defined by the patent claims. In particular, elements of embodiments described below may be combined with elements of other embodiments described, unless the context indicates otherwise.

The terms "wafer" or "semiconductor substrate" used in the following description may encompass any semiconductor-based structure having a semiconductor surface. Wafer and structure are to be understood as including doped and undoped semiconductors, epitaxial semiconductor layers optionally supported by a base support, and other semiconductor structures. For example, a layer of a first semiconductor material may be grown on a growth substrate of a second semiconductor material, for example a GaAs substrate, a GaN substrate or a Si substrate, or of an insulating material, for example on a sapphire substrate.

Depending on the intended use, the semiconductor can be based on a direct or an indirect semiconductor material. Examples of semiconductor materials that are particularly suitable for generating electromagnetic radiation include, in particular, nitride semiconductor compounds, through which, for example, ultraviolet, blue or longer-wave light can be generated, such as GaN, InGaN, AlN, AlGaN, AlGaInN, Al-GaInBN, phosphide semiconductor compounds, through which, for example, green or longer-wave light can be generated, such as GaAsP, AlGaInP, GaP, AlGaP, and other semiconductor materials such as GaAs, AlGaAs, InGaAs, AlInGaAs, SiC, ZnSe, ZnO, Ga ₂ O ₃ , diamond, hexagonal BN and combinations of the materials mentioned. The stoichiometric ratio of the compound semiconductor materials can vary. Other examples of semiconductor materials can include silicon, silicon-germanium and germanium. In the context of the present Description, the term “semiconductor” also includes organic semiconductor materials.

The term “substrate” generally includes insulating, conductive or semiconductor substrates.

The term "vertical" as used in this description is intended to describe an orientation that is substantially perpendicular to the first surface of a substrate or semiconductor body. The vertical direction can, for example, correspond to a growth direction when growing layers.

The terms "lateral" and "horizontal" as used in this description are intended to describe an orientation or alignment that is substantially parallel to a first surface of a substrate or semiconductor body. This can be, for example, the surface of a wafer or a chip (die).

The horizontal direction can, for example, lie in a plane perpendicular to a growth direction when growing layers.

In the context of the present disclosure, the term "ordered photonic structure" means a structure whose structural elements are arranged at predetermined locations. The arrangement pattern of the structural elements is subject to a specific order. The functionality of the ordered photonic structure results from the arrangement of the structural elements. The structural elements are arranged, for example, in such a way that diffraction effects occur. The structural elements can, for example, be arranged periodically so that a photonic crystal is realized. According to further embodiments, the structural elements can also be arranged in such a way that they represent deterministic aperiodic structures, for example Vogel spirals. According to further embodiments, the structural elements can also be arranged in such a way that they realize a quasi-periodic crystal, for example an Archimedean lattice.

In the context of this description, the term "electrically connected" means a low-resistance electrical connection between the connected elements. The electrically connected elements do not necessarily have to be directly connected to one another. Additional elements can be arranged between electrically connected elements.

The term “electrically connected” also includes tunnel contacts between the connected elements.

1A shows a schematic cross-sectional view of an optoelectronic semiconductor component 10 according to embodiments. The optoelectronic semiconductor component 10 comprises a first GaN-containing semiconductor layer 101 of a first conductivity type, for example n-conducting, a second GaN-containing semiconductor layer 102 of a second conductivity type, for example p-conducting, and an active zone 108, wherein the first semiconductor layer 101, the active zone 108 and the second semiconductor layer 102 are arranged one above the other to form a semiconductor layer stack. The optoelectronic semiconductor component 10 further comprises an ordered photonic structure 110 arranged adjacent to the second GaN-containing semiconductor layer 102 and a mode pusher layer 115 arranged between the active zone 108 and the first GaN-containing semiconductor layer 101. A mode pusher material of the mode pusher layer 115 has a refractive index of less than 2.4. Furthermore, a lattice constant c of the mode pusher layer 115 is in a range of 0.99 * a ≤ c ≤ 1.01 * a, where a corresponds to the lattice constant of GaN. For example, the following relationship can apply: 0.993 * a ≤ c ≤ 1.007 * a or even 0.995 * a ≤ c ≤ 1.005 * a. The lattice constant a of GaN corresponds to the lattice constant for wurtzite in the a-direction and is, for example, 0.3189 nm. In this way, the lattice of the mode pusher layer 115 is particularly well adapted to the lattice of the GaN layer or the growth substrate.

The active zone 108 can, for example, have a pn junction, a double heterostructure, a single quantum well structure (SQW) or a multiple quantum well structure (MQW) for generating radiation. The term "quantum well structure" has no meaning with regard to the dimensionality of the quantization. It therefore includes, among other things, quantum wells, quantum wires and quantum dots as well as any combination of these layers.

For example, the first and second semiconductor layers 101, 102 may each be GaN layers and may not have any other compositional elements. In general, the term “GaN-containing layer” refers to any compound semiconductor layer that contains GaN. For example, the first and second semiconductor layers may have a composition Al _x In _y Ga _1-xy N, with suitable values for x and y. x and y may assume 0 or 1 or any value between 0 and 1, where x + y < 1. According to embodiments, the composition of the first and second semiconductor layers 101, 102 may each be identical or different from one another.

The ordered photonic structure 110 can, for example, contain material of the second GaN-containing semiconductor layer 102. For example, a region of the second GaN-containing semiconductor layer 102 can be structured to form the photonic structure 110. The semiconductor layer can, for example, be structured by etching or selective growth to form columns with any cross-section. Gaps between adjacent columns can be filled with another material or with air. For example, sublayers of the second GaN-containing semiconductor layer 102 can adjoin a first and a second main surface or top side of the ordered photonic structure.

Due to the structuring of the ordered photonic structure 110, the layer has a reduced average refractive index. For example, the refractive index can be reduced from approximately 2.47 to the average value of approximately 2.3. As a result, a developing optical mode 16 can overlap with the ordered photonic structure 110 to a lesser extent. Furthermore, the developing optical mode 16 can be pushed to the side of the first semiconductor layer 101. Due to the presence of the mode pusher layer 115, the optical mode is now shifted back towards the active zone 108. As a result, an improved optical confinement, a lower threshold voltage and an increased efficiency are achieved in the optoelectronic semiconductor component.

The mode pusher layer 115 can, for example, have a thickness t of less than 2000 nm, for example less than 800 nm or less than 250 nm. The layer thickness of the mode pusher layer 115 can be greater than 1 nm, for example greater than 30 nm or greater than 50 nm. The mode pusher layer 115 is grown epitaxially with a low defect density. A lattice constant of the mode pusher layer is adapted to the lattice of the GaN-containing semiconductor layer 101, for example the GaN layer. For example, the mode pusher material can contain or consist of a material of the composition Al _x In _1-x N, where 0.77 ≤ x ≤ 0.87. For example, x can be in a range from 0.80 to 0.84. For example, x can have a value of approximately 0.82.

According to further embodiments, the mode pusher material may also comprise porous GaN. For example, the porous GaN may have an air entrapment fraction of approximately 15%, resulting in an average refractive index n of approximately 2.3.

The mode pusher material can be formed, for example, as a bulk layer. According to further embodiments, the mode pusher layer can also have a superlattice structure with one of the mode pusher materials mentioned and Al _x In _y Ga _1-xy N layers, with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x + y < 1, which are each formed alternately. The mode pusher material used and the Al _x In _y Ga _1-xy N layers have a different composition. For example, the mode pusher layer can have a superlattice structure with one of the mode pusher materials mentioned and GaN layers, which are each formed alternately. For example, a layer thickness of the individual layers of the mode pusher material can be less than 100 nm or less than 80 or 50 nm.

For example, a distance between a surface of the mode pusher layer 115 facing the active zone and the active zone 108 can be less than 1000 nm, for example less than 500 nm or less than 300 nm. The distance can be, for example, greater than 1 nm, or greater than 25 nm, for example greater than 80 nm.

1A further shows an optional cladding layer 117, which with reference to 1B will be explained in more detail.

The optoelectronic semiconductor component provides a laser, in particular a surface-emitting laser with a photonic crystal or ordered photonic structure. According to further embodiments, the laser can also be designed as an edge-emitting laser. Electromagnetic radiation 15 can be emitted, for example, via a side surface of the semiconductor layer stack. 1A further shows schematically the course of an optical mode within the semiconductor layer stack.

Due to the presence of the mode pusher layer 115, the optical modes are pushed towards the side of the second semiconductor layer 102 so that the optical mode overlaps with the active zone 108. Optical confinement can thus be improved. Accordingly, so-called "leaky modes", i.e. modes that "leak" into the substrate region, are reduced.

This is in 1B shown in more detail. 1B illustrates the refractive index within the, for example, 1A shown semiconductor layer stack. 1B also shows the electric field strength of the optical mode forming in the semiconductor structure. As in 1B As shown, the optoelectronic semiconductor component 10 has a photonic ordered structure 110 in which the average refractive index is greatly reduced compared to the neighboring layers. As further shown in 1B As shown, the mode pusher layer 115, which also has a reduced refractive index, is provided on the side of the first semiconductor layer 101.

For example, the refractive index n of the mode pusher layer 115 can be in a range of the average refractive index n of the ordered photonic structure 110. In this way, the electric field strength E is pushed into the region of the active zone 108. As further shown in 1B As shown, a position of the mode pusher layer 115 can be selected such that the electric field strength of the optical mode at a boundary surface of the mode pusher layer 115 facing the active zone 108 is less than 40% of the maximum field strength of the optical mode. In this way, particularly little absorption of the generated electromagnetic radiation takes place in a region of the mode pusher layer 115. For example, the position of the mode pusher layer 115 can also be selected such that the intensity of the optical mode or the electric field strength at a boundary surface of the mode pusher layer 115 facing away from the active zone 108 is less than 10% of the maximum intensity or electric field strength of the optical mode. This means, as in 1B As shown, the electric field strength in the region of the mode pusher layer 115 varies between E1 and E2.

According to embodiments, a first cladding layer 117 may be arranged between the substrate 100 and the mode pusher layer 115. For example, the cladding layer 117 may have a larger refractive index than the mode pusher layer 115. For example, the first cladding layer 117 may have a composition of Al _y Ga _1-y N with 0.02 < y < 0.25. For example, y may be less than 0.15 or less than 0.1. Furthermore, y may be greater than 0.03 or greater than 0.04. The layer thickness of the cladding layer 117 may, for example, be greater than 400 nm, for example greater than 900 nm or even greater than 1600 nm. This first cladding layer further suppresses the propagation of modes or residual mode energy into the substrate or into a layer beyond the first cladding layer 117. Due to the low refractive index, only a small amount of energy is present in the first cladding layer 117.

In addition to the described cladding layer 117 or alternatively, a second cladding layer 118 may be arranged between the mode pusher layer 115 and the active region 108. The second cladding layer 118 is more precisely in 1C which in turn shows a profile of the refractive index and the optical mode 16. The second cladding layer 118 can be, for example, an Al _y Ga _1-y N layer with y between 0.04 and 0.15. A layer thickness of the second cladding layer 118 can be, for example, greater than 0.3 µm and less than 2 µm. The second cladding layer 118 further suppresses the propagation of modes into the substrate. Furthermore, in the layers that lie under the second cladding layer 118, ie on the side facing away from the active zone 108, the energy of the optical mode is further reduced.

As in 1C As further illustrated, the second GaN-containing semiconductor layer 102 can also have a higher refractive index n. For example, the refractive index of the second semiconductor layer 102 can correspond to the refractive index of the first semiconductor layer 101. In this way, there are regions with a reduced refractive index on both sides of the active zone 108. Furthermore, a layer (first semiconductor layer 101, second semiconductor layer 102) with an increased refractive index n is arranged on the side of the mode pusher layer 115 or the ordered photonic structure 110 facing away from the active zone 108. The difference in the refractive index between layers with an increased and reduced refractive index is approximately in a range of Δn/n of 0.1/2.45, which corresponds to approximately 3% or 0.08 or more. The percentage difference is related to the larger value of the refractive index. As in 1C As shown, the main maximum of the optical mode 16 is located in the region of the active zone 108. Furthermore, on the side of the second semiconductor layer 102 there can be a small secondary maximum 121, which is separated from the main maximum by the ordered photonic structure 110. In this way, the optical properties can be further improved.

2 shows a schematic cross-sectional view of an optoelectronic semiconductor component 10 according to further embodiments.

This in 2 The optoelectronic semiconductor component 10 shown has a first semiconductor layer 101 of a first conductivity type, for example n-type, an active zone 108 for generating electromagnetic radiation and a second semiconductor layer 102 of a second conductivity type, for example p-conductive. The first and second semiconductor layers can be GaN-containing semiconductor layers, for example GaN layers. The first semiconductor layer 101, the active zone 108 and the second semiconductor layer 102 are formed one above the other to form a semiconductor layer stack. An ordered photonic structure 110 can be formed inside half of the second semiconductor layer 102.

For example, a part of the second semiconductor layer 102 can be arranged on a side of the ordered photonic structure 110 facing the active zone 108. Furthermore, another part of the second semiconductor layer 102 can be arranged on a side of the ordered photonic structure 110 facing away from the active zone 108. A current spreading layer 112 made of a conductive material, for example a conductive transparent oxide, for example ITO (“indium tin oxide”), can be formed in contact with the second semiconductor layer 102. A first contact layer 111 can be formed in contact with the first semiconductor layer 101. The semiconductor layer stack can be arranged above a suitable substrate 100, for example a GaN substrate.

The mode pusher layer 115 can be arranged between the substrate 100 and the first semiconductor layer 101. For example, the substrate 100 can be a growth substrate and the individual layers of the semiconductor layer stack are grown epitaxially one after the other over the substrate 100.

Electromagnetic radiation 15 is emitted, for example, via a second main surface 105 of the substrate 100. The semiconductor layer stack is arranged above a first main surface 104 of the substrate 100.

For example, after the mode pusher layer 115 has grown, the growth conditions of the subsequent semiconductor layer, for example a GaN layer, can be set so that a two-dimensional electron gas region 114 forms at the interface between the first semiconductor layer 101 and the mode pusher layer 115. More precisely, the material combinations and compositions can be set so that a sharp transition occurs at this point, so that a corresponding band bending of the conduction and valence bands occurs at the interface and a two-dimensional electron gas is present. The charge carriers have increased mobility in the two-dimensional electron gas region 114, so that improved current injection can take place in this way.

For example, as in 2 As shown, the first semiconductor layer 101 is contacted via the first contact layer 111 from a side facing the active zone 108. The other layers, in particular the active zone 108, the second semiconductor layer and the ordered photonic structure 110 are structured to form a mesa, for example. An edge region of the first semiconductor layer 101 is exposed, ie not covered with semiconductor layers. Accordingly, contact with the first semiconductor layer 101 takes place exclusively via the edge regions. Because a two-dimensional electron gas region 114 is formed at the interface with the mode pusher layer 115, improved current injection can take place.

In the above 1B and 1C the transitions between individual layers are each characterized as steep and abrupt transitions. According to further embodiments, however, these transitions can also be realized as gradual or step-like transitions or interfaces. In particular, layers that border the mode pusher layer 115 can form a gradual transition. In this way, the forward voltage can be reduced.

Furthermore, in 2 the second current spreading layer 112 is shown. Alternatively, a metallic mirror layer, for example a DBR ("Distributed Bragg Reflector") mirror, could be applied over the second semiconductor layer 102. For example, a metallic mirror layer over the second semiconductor layer 102 could act as an electrical contact. Such a metallic mirror layer could also provide an improved thermal connection.

According to further embodiments, the optoelectronic semiconductor component 10 can additionally comprise a DBR mirror layer arranged above the first main surface 104 of the substrate 100. In this case, the mode pusher layer 115 can also be designed as part of this DBR mirror layer 119. According to further embodiments, contacting of the first semiconductor layer 101 can also be carried out in a different way. For example, contacting can be carried out via the substrate 100, for example via suitable metallic lines. For example, such a contact could be outside the optical aperture. According to further embodiments, metallic lines can also be designed as so-called polarizing metallic lines, which can act like a polarization grating, for example, and can be arranged within the optical aperture.

The optoelectronic semiconductor component described here can be used, for example, in the automotive sector, for example as a headlight, as a laser projector or for material processing.

Although specific embodiments have been illustrated and described herein, Those skilled in the art will recognize that a variety of alternative and/or equivalent designs may be substituted for the specific embodiments shown and described without departing from the scope of the invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, the invention is limited only by the claims and their equivalents.

LIST OF REFERENCE SYMBOLS

10

Optoelectronic semiconductor device

15

emitted electromagnetic radiation

16

optical fashion

100

Substrat

101

first GaN-containing semiconductor layer

102

second GaN-containing semiconductor layer

104

first main interface

105

second main interface

108

active zone

110

ordered photonic structure

111

first contact layer

112

second current spreading layer

114

two-dimensional electron gas region

115

Mode pusher layer

117

first coat layer

118

second coat layer

119

DBR mirror layer

121

Secondary maximum

122

Mesa

123

Edge area

Claims (16)

Optoelectronic semiconductor component (10), comprising: a first GaN-containing semiconductor layer (101) of a first conductivity type, a second GaN-containing semiconductor layer (102) of a second conductivity type, and an active zone (108), wherein the first semiconductor layer (101), the active zone (108) and the second semiconductor layer (102) are arranged one above the other to form a semiconductor layer stack, an ordered photonic structure (110) arranged adjacent to the second GaN-containing semiconductor layer (102), and a mode pusher layer (115) arranged on a side of the active zone (108) facing the first GaN-containing layer (101), wherein a mode pusher material of the mode pusher layer (115) has a refractive index of less than 2.4 and a lattice constant c of the mode pusher layer (115) is in a range of 0.99 * a ≤ c ≤ 1.01 * a, where a corresponds to the lattice constant of GaN. Optoelectronic semiconductor device (10) according to Claim 1 , wherein the mode pusher layer (115) is arranged on a side of the first semiconductor layer (101) facing away from the active zone (108). Optoelectronic semiconductor device (10) according to Claim 1 or 2 , wherein the mode pusher layer (115) has a superlattice structure comprising layers of the mode pusher material and Al _x In _y Ga _1-xy N layers, with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x + y < 1, which are each arranged alternately. Optoelectronic semiconductor component (10) according to one of the preceding claims, wherein a layer thickness of the mode pusher layer (115) is less than 800 nm. Optoelectronic semiconductor component (10) according to one of the preceding claims, wherein a distance of the mode pusher layer (115) to the active zone (108) is less than 1000 nm. Optoelectronic semiconductor component (10) according to one of the preceding claims, wherein the mode pusher material comprises a material of the composition Al _x In _1-x N with 0.77 ≤ x ≤ 0.87. Optoelectronic semiconductor component (10) according to one of the Claims 1 until 5 , wherein the mode pusher material comprises porous GaN. Optoelectronic semiconductor component (10) according to one of the preceding claims, wherein a position of the mode pusher layer (115) is selected depending on the refractive index of the mode pusher layer (115) such that an intensity of an optical mode (16) within the semiconductor layer stack at an interface of the mode pusher layer (115) facing the active zone (108) is less than 40% of the maximum intensity of the optical mode (16). Optoelectronic semiconductor component (10) according to one of the preceding claims, wherein a position of the mode pusher layer (115) is selected depending on the refractive index of the mode pusher layer (115) such that an intensity intensity of an optical mode (16) within the semiconductor layer stack at a boundary surface of the mode pusher layer (115) facing away from the active zone (108) is less than 10% of the maximum intensity of the optical mode (16). Optoelectronic semiconductor component according to one of the preceding claims, further comprising a substrate (100) on the side of the first semiconductor layer (101), wherein the first semiconductor layer (101) comprises a first cladding layer (117) with a refractive index that is greater than the refractive index of the mode pusher material, wherein the first cladding layer (117) is arranged between the mode pusher layer (115) and the substrate (100). Optoelectronic semiconductor device (10) according to Claim 10 , wherein a layer thickness of the first cladding layer (117) is greater than 1000 nm. Optoelectronic semiconductor component (10) according to one of the preceding claims, wherein the first semiconductor layer (101) further comprises a second cladding layer (118) between the mode pusher layer (115) and the active zone (108), wherein the refractive index of the second cladding layer (118) is smaller than the refractive index of GaN and larger than the refractive index of the mode pusher layer (115). Optoelectronic semiconductor device (10) according to Claim 12 , wherein a layer thickness of the second cladding layer (118) is less than 1000 nm. Optoelectronic semiconductor component (10) according to one of the preceding claims, wherein the ordered photonic structure (110) is arranged between the active zone (108) and the second semiconductor layer (102) and the second semiconductor layer (102) has a larger refractive index than the average refractive index of the ordered photonic structure (110). Optoelectronic semiconductor component (10) according to one of the preceding claims, further comprising a two-dimensional electron gas region (114) at an interface between the first semiconductor layer (101) and the mode pusher layer (115). Optoelectronic semiconductor component (10) according to one of the preceding claims, which is designed as a surface-emitting semiconductor laser.

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