DE102007016932A1 - Solid state radiation source, its manufacture and use - Google Patents

Abstract

A novel solid-state radiation source is similar to a semiconductor LED, but is simpler in design and therefore easier to manufacture and has, as far as can be seen, a different, novel mode of action. The radiation source consists of a zone containing a mixture of at least two material components, at least one of which is a conductor or semiconductor, and a p-n or n-p junction adjacent to this mixture zone. The power supply takes place on the one hand via this mixture zone and on the other hand via the transition, wherein the latter can be operated in the forward direction or also advantageously in the reverse direction. This novel radiation source works in both modes with low supply voltage, z. B. 3 V, and low losses and therefore usually requires no cooling. Even operation with AC voltage is possible.

Description

The The present invention relates to a novel radiation source, which is similar to an LED, but built much simpler and therefore easier to manufacture is. The solid-state radiation source consists of at least two areas or zones, one of which contains a mixture of at least two material components, from where at least one is a conductor or semiconductor, and one at this area adjacent p-n or n-p junction, at least one transition with diode characteristic. The power supply takes place on the one hand over the area, containing the material mixture and then again the p-n or n-p transition, the latter is preferably operated in the reverse direction. These Radiation source works with low supply voltage, z. B. 3 V, and low losses and therefore usually requires no cooling.

Introduction and state of the art

The best known and widely distributed solid-state radiation source is the semiconductor light emitting diode, usually referred to as LED (light emitting diode), the today small incandescent lamps for display purposes practically complete replaced. Compared to the light bulb the LED has a higher one Efficiency, also works with low supply voltages, is mechanically robust and insensitive to vibrations and shocks and has a longer one Lifespan. Even her shorter Response time is an advantage in many applications. Your low Size allows for the realization of new designs. Furthermore she can even made of elastic materials, what their mechanical Robustness further increased.

Different as light bulbs LEDs are not temperature radiators. They emit light in a limited spectral range, the light is almost monochrome. That's why they are advantageous z. B. be used in signal systems, where at Use of other light sources by means of color filters the largest part of the spectrum, and thus the light output, is filtered out. Also the o. G. shorter Response time of an LED proves to be an advantage in signaling devices, z. For example the brake lights of a Kraffahrzeugs.

• – Aluminiumgalliumarsenid (AlGaAs) – rot und infrarot, bis 1000 nm Wellenlänge;
• – Galliumaluminiumarsenid (GaAlAs) – z. B. 665 nm, rot, bis 1000 nm;
• – Galliumarsenidphosphid (GaAsP) und Aluminiumindiumgalliumphosphid (AlInGaP) – rot, orange und gelb;
• – Galliumphosphid (GaP) – grün;
• – Siliziumcarbid (SiC) – blau;
• – Zinkselenid (ZnSe) – blau;
• – Indiumgalliumnitrid (InGaN)/Galliumnitrid (GaN) – UV, blau und grün.

The color of the generated light of an LED is determined by targeted selection of the semiconductor materials and the doping. Above all, the spectral range, ie the respective color in the visible range, is determined as follows:

• Aluminum gallium arsenide (AlGaAs) - red and infrared, up to 1000 nm wavelength;
• - gallium aluminum arsenide (GaAlAs) - z. B. 665 nm, red, to 1000 nm;
• Gallium arsenide phosphide (GaAsP) and aluminum indium gallium phosphide (AlInGaP) - red, orange and yellow;
• - gallium phosphide (GaP) - green;
• Silicon carbide (SiC) - blue;
• - zinc selenide (ZnSe) - blue;
• Indium gallium nitride (InGaN) / gallium nitride (GaN) - UV, blue and green.

at The production of the LED semiconductors uses different epitaxy methods, as they are known from semiconductor manufacturing. But there are some said materials, for. As GaAs, are highly toxic, requires their processing a high security effort.

operated LEDs are in the forward direction of the diode, usually with a series resistor or a constant current source. The forward voltage, yes the operating voltage is, depending on the semiconductor material and thus color between about 1.2 and 4.5 V.

Semiconductor laser (Laser Diodes) form a second important group of solid-state radiation sources. A laser diode is a semiconductor device related to the light emitting diode (LED), which, in contrast to the LED but generates laser radiation. To becomes a p-n junction operated with heavy doping at high current densities. Here too the semiconductor material determines the wavelength that the semiconductor laser emitted. It is typically in the near infrared and red, it However, there are also blue and ultraviolet radiating laser diodes. There are different designs, depending on the application differ.

at The laser diode is the emission of light through recombination processes of electrons and holes at the p-n junction causes. For this purpose, usually the end faces of the laser diode are partially reflecting formed and form an optical resonator in which a can form a standing wave. Is a so-called population inversion before, d. H. There are more electrons or holes with a higher energy state as such, with a lower, so can the induced emission become the dominant radiation process. Then the laser diode emits Laser radiation.

The Occupancy inversion is in laser diodes by electric pumping generates, a direct electrical current in the forward direction for steady Replenishment of electrons and holes.

Most laser diodes are edge emitters, ie the light leaves the semiconductor at its fracture edge close to the surface transverse to the current flow. Since only a portion of the electrical energy is converted to laser radiation, most laser diodes must be cooled as they are would be destroyed by too high temperatures. The cooling can, for example, be carried out "passively" by heat removal via a metal surface, but Peltier elements are also used for "active" cooling.

The best known and most widely used laser diode application is probably the CD player using an AlGaAs laser diode which emits light with a wavelength of 780 nm, so at the long-wavelength end of the visible spectrum in the red region works.

organic LEDs, called OLEDs, contain organic materials but are otherwise like LEDs are built and operated as well. Anyway also in OLEDs the existing p-n junction in the forward direction operated.

Two Points should be recorded at this point. For one thing is the base material of both LEDs and laser diodes is a crystalline one Semiconductor material that needs to be exactly doped, d. H. in which smallest amounts of impurities must be introduced to the desired To generate function of the semiconductor device. Therefore, those for an industrial Manufacturing necessary facilities consuming, z. B. are pure and clean rooms an indispensable prerequisite, and the ones involved People are common highly qualified. Second, the light-emitting diodes as in Laser diodes always present p-n junction in the forward direction operated.

It There are more, electrically excited bulbs that do not use thermal radiators are, for. B. electroluminescent. With it produced radiation sources however, they do not have a p-n or n-p junction. So you should out of consideration here.

The invention

task The invention is to a universally applicable, inexpensive solid-state radiation source create that much easier to manufacture than the one described above is.

• – Die Strahlungsquelle besteht im Wesentlichen aus zwei Zonen oder Bereichen, die in Wechselwirkung zueinander stehen, wobei eine der Zonen, anders als bei Leuchtdioden oder Halbleiterlasern, ein im Wesentlichen amorphes Gemisch aus mindestens zwei Komponenten ist. Dieses quasi nichtmetallische Gemenge oder Gemisch muss wahrscheinlich nicht einmal homogen sein. Diese (zweite) Zone ist leitend oder halbleitend und sollte (je nach Bauweise der Strahlungsquelle) zumindest für die angeregte Wellenlänge durchlässig sein, z. B. für Strahlung im sichtbaren Bereich transparent oder etwas opak, d. h. durchscheinend.
• – Die Strahlungsquelle mit ihrem p-n- oder n-p-Übergang, d. h. derjedenfalls vorhandenen Sperrschicht, kann auf mehrere Arten betrieben werden: Im Gleichstrombetrieb nämlich in Durchlassrichtung oder in Sperrrichtung, wobei die erzeugte Strahlung je nach Betriebsart unterschiedliche Charakteristiken aufweist. Auch ein Betrieb mit Wechselspannung ist möglich.

The present invention, described in detail below, relates to a novel type of solid state radiation source and to methods of operation and fabrication thereof. Such a radiation source differs significantly from the known arrangements described above in at least the following points:

• - The radiation source consists essentially of two zones or areas which interact with each other, wherein one of the zones, unlike light-emitting diodes or semiconductor lasers, is a substantially amorphous mixture of at least two components. This quasi-non-metallic mixture or mixture probably does not even have to be homogeneous. This (second) zone is conductive or semiconducting and should be permeable (depending on the design of the radiation source) at least for the excited wavelength, z. B. for radiation in the visible range transparent or slightly opaque, ie translucent.
• The radiation source with its pn or np junction, ie the barrier layer present in each case, can be operated in a number of ways: in DC operation, namely in the forward direction or in the reverse direction, the generated radiation having different characteristics depending on the operating mode. Even operation with AC voltage is possible.

A radiation source according to the invention has in principle at least two components: a pn or np junction, which can also be formed as an n ⁺ -n or p ⁺ -p junction or similar barrier layer, and an adjoining region of a material mixture, which will be described in more detail below. For the transition seems to be essential that it has the characteristic of a diode, preferably a Zener diode. (If one of the pn or np transition or barrier layer is mentioned below, then all such transitions should be included.) The electrical contacting takes place on the one hand at the area with the material mixture - hereinafter also referred to as mixture zone - and on the other hand on that side the transition, which is opposite the boundary of the mixture zone.

Becomes the novel radiation source as a light emitting diode in the forward direction operated, so there is a so-called "soft" or "quiet" emission, which is similar to the emission of a light emitting diode. Also the Current / voltage characteristic is similar the current / voltage characteristic of a light emitting diode; correspond in principle both characteristics of a semiconductor diode.

More interesting is the operation of the novel radiation source in the reverse direction of the p-n or n-p junction. Then it runs the current / voltage characteristic is similar the characteristic of a zener diode, that is with a pronounced kink. When the Zener voltage is reached, ie the kink in the characteristic curve, a pronounced, so-called "sharp" emission of radiation, their strength significantly higher is the maximum achievable emission when operating in the forward direction of the transition. It Seems that reaching the Zener Knicks a kind of avalanche effect occurs. You could therefore the reverse-biased p-n or n-p junction of Also refer to radiation source as "ignition zone".

critical for the Function and properties seem to have a number of properties that present in the mixture zone or used for the mixture zone Materials and their mixing ratio.

One first point concerns the material selection for the mixed zone. If what to be used here as an example, the novel radiation source in a given semiconductor structure, ie a crystalline one Base material, for example a semiconductor wafer or a Photoelement, to be implemented, need for the selection of the second (and possibly another) material considered the following aspects become. In this case, the crystalline base material to be processed Be doped or not.

• – gewünschte Farbe
• – Leiter- oder Halbleiter-Eigenschaft mit Widerstandsvorgabe
• – Transparenz oder allenfalls geringe Opazität (je nach Bauweise)
• – Elektronegativität.

The considerations to be considered for material selection are:

• - desired color
• - Conductor or semiconductor characteristic with resistance specification
• - Transparency or at best low opacity (depending on the construction)
• - Electronegativity.

• – Arsen (As) – rot;
• – Phosphor (P) – grün;
• – Zinksulfid (ZnS) – blau;
• – Schwefel (S) – gelb.

In essence, the color or wavelength of the radiation source is determined by the material mixture, in particular the second material in the mixing zone. This second material must be able to emit photons. As is known, for example, phosphorus (P), arsenic (As), sulfur (S) or a compound such as zinc sulfide (ZnS) capable of. When using crystalline, doped silicon (Si) as the base material or else another conductor or semiconductor material, depending on the second material, the following frequencies or colors of the novel radiation source will result:

• - Arsenic (As) - red;
• - phosphorus (P) - green;
• - zinc sulfide (ZnS) - blue;
• - Sulfur (S) - yellow.

A comparable list results when using germanium (Ge) as a basic material. However, it will be different electronegativity also change the emission.

The for the However, mixed material to be used second material is also dependent on used base material, its conductivity or its resistance, the course related to its doping. Ie. at a p-doped, z. B. boron-doped base material, it is necessary at least one n-doped second material to use while in the case of an n-doped base material, at least one p-doped secondary material to use. When using a neutral base material such as undoped silicon (S) can be both n-active and p-active Secondary material to be used. It was found that both an n-neutral transition as well as a p-neutral transition can be effective.

It can find other basic materials use; the expert becomes It will not be difficult, the appropriate material combinations to determine experimentally.

Also a ladder can be used as a base material, e.g. B. can aluminum rendered transparent or translucent by adding foreign matter become.

Farther must be used in the material selection on the difference of electronegativity of the used Respected substances / materials. Under electronegativity, understands one's ability of an atom, bonding electrons in a chemical bond to draw. In essence, it is derived from the nuclear charge and the atomic radius certainly. Usually are atoms with high electronegativity called electronegative, those with low electronegativity as electropositive. It was found that the electronegativity of the two substances, the for the mixture zone should be used a certain distance should have each other. It has also been shown that the wavelength of the generated radiation from the relative electronegativity of the used Depend on materials seems: When using two materials was emitted Radiation the longer wavelength, the further the electronegativity of the two materials lies apart.

One another crucial point for the material selection and the mixing ratio is the resulting electrical resistance of the mixture zone with the generated material mixture, associated with the diode characteristic of the building up barrier. It has become a certain criterion as decisive for the function of the novel Radiation source exposed.

This criterion is the requirement of the lowest possible resistance measured across the mixture zone and the barrier layer (or diode), in the forward direction of the latter. It has been found that the mixing ratio of the two (or more) components must be such that this resistance reaches at least approximately a minimum. M. a. W., changing the mixing ratio of one extreme (100% first component, 0% second component) over an average ratio (50% first plus 50% second component) to the other extreme (0% first component, 100% second component), so the electrical resistance reaches for a certain mixture ratio, which depends on the selected components, is a well-defined minimum. The radiation source thus generated has diode characteristics at this mixing ratio. Outside of this characteristic mixing ratio, the electrical resistance is very high and in principle independent of direction.

at operable specimens of the novel radiation source, as they are described in detail below became an on-resistance less than 800 to 1000 Ω measured; in minimum case even in the range 10 to 15 Ω. The reverse resistance was in the MΩ range. It also appears that the power of the radiation source is decreasing On-resistance increases.

The Production of a radiation source according to the invention is relative simple, but at this point the procedure is only outlined should. In the embodiments described below are accurate Information and descriptions for different construction methods, the materials used and the obtained and measured results.

The The simplest method of production is in a given crystalline semiconductor substrate, which may be doped, but not must, a cup-shaped Deepening of z. B. about 0.5 mm in diameter and 0.5 mm depth, preferably by means of a laser for material processing. This "cup" has a "bottom" of semiconductor material the substrate used, so is not a through hole. The Walls of the Cup are now partially with a ladder metal, z. Conductive silver, coated, lined, so to speak. This conductor later forms the one electrode of the Radiation source. The bottom of the cup is made of material of the substrate, this is probably no longer completely crystalline due to the laser processing is. Now the selected second material is introduced into the cup, the cup at least approximately again filled becomes. The second material is now z. B. melted by means of a laser, according to which it might be an alloy with the substrate material, probably rather a mixture forms. The composition of this mixture, which is perhaps only a mixture, corresponds to the o. g. characteristic mixture ratio, with which the radiation source for she gets typical diode characteristic. Finally, the second electrode on the surface applied to the mixture zone, of course in the way that it is isolated from the first electrode and the exit of the radiation as little as possible with special needs. Finally, the resulting, novel radiation source still subjected to a passivation step, as is common in semiconductor technology.

Of the Specialist could already with reference to this description, a radiation source according to the invention produce; in the examples below, of course, so far possible, specified values and settings. It is important that the Producing no clean rooms but in ambient atmosphere at normal room temperature carried out can be.

The Thus prepared radiation source can now, as already mentioned above, on Two types are operated: in the forward direction, being their electrical and probably also resembles optical characteristics of a semiconductor light emitting diode, or in the reverse direction, which is electrically as well as visually a more interesting characteristic is observed.

The The electrical characteristic of the reverse-biased radiation source is similar to that of FIG a zener diode. Ie. when applying an increasing voltage In a first, low voltage range, no (or only low) radiation generated. With further increasing voltage occurs a kind of "optical Zener effect "on, d. H. when exceeded The radiation sets in vehemently at a certain tension. A Strombegenzung not essential, z. Eg not if a stable voltage source prevents exceeding the maximum power.

• – sie ist sehr einfach, prinzipiell in Umgebungsatmosphäre bei normaler Zimmertemperatur mit geringem apparativem Aufwand herstellbar und benötigt nicht unbedingt Reinräume;
• – die Mischungsverhältnisse der Materialien für die Gemischzone sind, im Vergleich mit der Präzision, die bei Halbleiter-Dotierungen erforderlich ist, weniger kritisch (es ist nicht die übliche Halbleiter-Dotierung);
• – sie kann "Abfall" aus der Halbleiter-Fertigung verwerten;
• – sie kann nahezu beliebig, auch nachträglich, in Halbleiter-Chips integriert werden;
• – sie benötigt (in den meisten Fällen) keine separate Kühlung;
• – sie ermöglicht optische Verbindungen unmittelbar auf Halbleiter-Chips, z. B. Si-Chips;
• – sie ermöglicht die Herstellung starrer oder flexibler Strahlungsquellen mit grosser Emissionsfläche sind, z. B. Lichtplatten, Leuchtfolien, flexible Bildschirme;
• – sie kann, sogar nachträglich, in TFT-Bildschirme integriert werden.

Obviously, a radiation source made and patterned has a number of advantages:

• - It is very simple, in principle in ambient atmosphere at normal room temperature with little equipment required to produce and not necessarily clean rooms;
• The mixing ratios of the materials for the mixture zone are less critical (it is not the usual semiconductor doping) compared to the precision required for semiconductor dopants;
• It can utilize "waste" from semiconductor manufacturing;
• - It can be almost arbitrarily, even subsequently, integrated into semiconductor chips;
• It does not require (in most cases) separate cooling;
• - It allows optical connections directly on semiconductor chips, z. Si chips;
• - It allows the production of rigid or flexible radiation sources with large emission surface are, for. Light panels, luminescent films, flexible screens;
• - It can be integrated into TFT screens, even retroactively.

Another point still needs to be considered. A large number of the semiconductor radiation sources described above use materia lien, which are relatively rare and are considered as key elements; This applies above all to the elements gallium and indium, which are often used in the technology under consideration, and whose annual production is only a few 100 t. The scarcity is already noticeable in the costs. So z. For example, within three years, the price of indium has risen twentyfold, and this resource is already scarce. For gallium, which is a by-product of the smelting of bauxite, ie the production of aluminum, a similar course can be observed.

In front This background shows a further advantage of the radiation source according to the invention: It consists in one embodiment made of silicon as a base material, in virtually unlimited quantities available and therefore available inexpensively. Also in the Mixed zone added materials such as phosphorus, zinc sulfide or Sulfur are always and everywhere readily available. This also applies to Arsenic, however, with its processing certain precautions required are.

refinements the novel radiation source according to the invention and the method for their manufacture and operation, the following description various embodiments and the claims be removed.

embodiments and drawings

following be several embodiments the invention explained in more detail with reference to the drawings. The drawings show in:

1 a schematic diagram of the inventive radiation source;

2 a qualitative course of the electrical resistance of a material mixture, as used in the invention;

3 the schematic structure of a first embodiment;

4 the schematic structure of a second embodiment;

5 the schematic structure of a third embodiment;

6 the schematic structure of a fourth embodiment;

7 the schematic structure of a fifth embodiment; similar to the one in 3 shown;

8th the schematic structure of a sixth embodiment;

9 the schematic structure of a laser as the seventh implementation;

10 the schematic structure of another laser;

11 a two-color light source according to the invention in section;

12 a plan view of the light source according to 11 ,

13 another embodiment of a laser.

at all figures are schematic representations that not true to scale are.

In 1 For example, a radiation source according to the invention is shown as a scheme according to current understanding. This figure is intended above all to explain the basic structure and function of the invention, as far as it is understood so far.

A doped first zone 1 that z. B. boron-doped silicon (Si) and should be conductive or semi-conductive, on the one hand with an electrical contact 4 with the connecting cable 6 busy. On the opposite side, this first zone borders 1 to the second zone 2 which is a more or less homogenous mixture or mixture, perhaps also partially an alloy of at least two materials, as described above. For example, when boron-doped silicon is used as the base material, it may be a mixture of the base material silicon (Si) and phosphorus (P), with the characteristic mixing ratio described above having to be achieved. This will be explained in more detail below. Such a mixture Si + P gives a green light source, that is to say a radiation source which operates in the visible range and which irradiates the radiation 8th sending out.

• (1) Si + As ergibt eine rote Strahlungsquelle; Zenerspannung ca. 1,2 V;
• (2) Si + P ergibt eine grüne Strahlungsquelle; Zenerspannung ca. 3,6 V;
• (3) Si + ZnS ergibt eine blaue Strahlungsquelle; Zenerspannung ca. 4,4 V;

The following material compositions SiX, where X denotes the second material, have been experimentally investigated for the mixture zone and have shown the desired effect:

• (1) Si + As gives a red radiation source; Zener voltage approx. 1.2 V;
• (2) Si + P gives a green radiation source; Zener voltage approx. 3.6 V;
• (3) Si + ZnS gives a blue radiation source; Zener voltage approx. 4.4 V;

In the forward direction a voltage is sufficient of less than 1 V, usually 0.6 to 0.8 V, to cause a glow, so a radiation emission. Without a series resistor, the current rises sharply even with voltage changes of a few tenths of a volt, so that in this case usually a series resistor is required to limit the current.

As also mentioned elsewhere, Not only can silicon be used as the base material, but also also germanium or other semiconductors. It even seems possible that Generating radiation emission with a conductor as the base material. When subsequently mostly called silicon as an example of the base material this is to simplify the understanding, it does not limit it to this material. Furthermore, it will be emphasized again that the Base material, if it is a semiconductor, both doped as well as undoped can be used.

• 1. der elektrische Widerstand der Strahlungsquelle in Durchlassrichtung unterhalb einer Grenze von grössenordnungsmässig 1 kΩ liegt, vorzugsweise unter 800 Ω;
• 2. die hergestellte Mischung Si + X transparent ist oder geringe Opazität aufweist;
• 3. die beiden Materialien, Si und X, verschiedene Elektronegativitäten aufweisen.

The desired function is achieved. if

• 1. the electrical resistance of the radiation source in the forward direction is below a limit of the order of magnitude of 1 kΩ, preferably below 800 Ω;
• 2. the produced mixture Si + X is transparent or has low opacity;
• 3. the two materials, Si and X, have different electronegativities.

The second zone is produced 2 by merging two components by means of heat. In the example, one component is the base material, in the example, boron-doped Si, the second component X in Example P. For this purpose, a corresponding amount P or depending on the geometry in the doped Si or simply introduced or introduced and the two materials by means of a high power laser fused. The resulting mixture now forms the second zone 2 ,

The mixing ratio of the two materials Si and X, here P, is determined according to the following new rule. As already explained above, it has been found that mixtures resulting from a melt, such as those described, exhibit a characteristic course of the electrical resistance as a function of the mixing ratio, measured in the forward direction of the resulting diode. Qualitatively, this runs as in 2 that is, a marked minimum OB (optimum range) of the resistor R occurs in a narrow range of the mixing ratio Si / X of the materials Si and X used. Depending on the order of magnitude of the radiation source and the doping of the silicon base material, this characteristic mixing ratio is approximately 10: 1 to 1:10, ie it is far removed from the usual dopants in the semiconductor field, which are usually in the range 1:10 ⁴ to 1:10 ⁷ move. In the following, this relationship is referred to as a "mixing rule", ie the characteristic mixing ratio of the two (or more) components of the mixture zone required for the function of the radiation source according to the invention must correspond to the mixing rule.

It has also shown that a variation of the mixing ratio (similar like the variation of doping in an LED) one, albeit limited Influence on the wavelength the emitted radiation, d. h. that change the mixing ratio a color change (at emission in the visible range) of the radiation source according to the invention causes. By means of a suitable selection of the second material and the mixing ratio let yourself therefore virtually any desired Color or wavelength adjust the emitted radiation.

Between the first zone 1 and the mixture zone 2 Forms, as previously described, a transition 3 in the present case, depending on the doping of the first zone 1 a pn or np transition is likely. Is the first zone 1 Of p-doped Si, which is caused in the example by a doping with boron (B), so an np transition is formed, ie, the mixture zone 2 will have an excess of electrons.

On the transition 3 opposite side carries the mixture zone 2 , similar to the first zone 1 , an electrical contact 5 by means of the connection cable 7 to a power source (in 1 not shown) is connectable.

In a first operating mode, this conductive structure is now connected to a current source such that the np junction is operated in the forward direction. At the indicated dopings (first zone 1 p-doped, mixed zone 2 with excess of electrons), therefore, the negative pole of the power source via the line 7 with the mixture zone 2 connected and the positive pole over the line 6 with the first zone 1 , With increasing current intensity, the radiation source will now light up, in principle similar to a semiconductor light emitting diode (LED). The voltages used are in Niedervoltbe rich at a few volts, even less than 1 V, so that the use of a novel radiation source according to the invention are virtually unlimited.

Despite this similarity to an LED must not be overlooked that the latter has a different structure than the inventive radiation source: an LED usually consists of a mostly n-type base semiconductor, on which a very thin p-type semiconductor layer is deposited with high hole density, the at operation shines. Both semiconductors of the LEDs are crystalline, with the usual in semiconductor technology, extremely small and precisely metered amounts of impurities added. Such dopants range in size from one donor or acceptor atom to 10 ⁷ to 10 ⁴ Si atoms.

In the case of the radiation source according to the invention, by contrast, the mixture zone exists 2 not or at least not continuously made of crystalline semiconductor material, but it is a mixture or a mixture of the melted or otherwise heat-treated, non-crystalline semiconductor material of the substrate and a second material X. Furthermore, the conductivity is not determined by doping, ie targeted introduction of less impurities but by the roughly coalescing of the two materials in a mixing ratio that is approximately closer to 10: 1 to 1:10 than the extreme "mixing ratios" that are the rule in semiconductor doping. As I said, the mixture zone 2 certainly not continuous crystalline, but a more or less homogeneous mixture or mixture, wherein in some areas, crystalline structures or alloys may occur.

As already indicated above, is the operation of the radiation source according to the invention in the reverse direction of the inner p-n or n-p transition amazing.

there extends the current-voltage characteristic is similar like a zener diode. Up to the Zener kink, with increasing voltage practically none or only very little radiation is emitted. Upon reaching the Zener voltage a kind of breakthrough with significant radiation emission, what is called "optical Zener effect " could.

This Effect does not seem to resemble any of the known radiation sources. The The voltages used are also in this operating mode in the low voltage range, as above for some material combinations already mentioned, so the use the novel radiation source hardly in this mode Limits are set. Because the novel radiation source is involved hardly heated, is usually no cooling required. For this one can assume a high efficiency.

When third mode, the novel radiation source also with AC voltage to be operated. This mode seems like one have better efficiency than the DC voltage operation in the forward direction.

3 shows a first arrangement, the production of which will be described in detail below. In a given, boron-doped, ie p-active semiconductor substrate 11 a U-shaped trench of about 0.15 mm width and about 0.5 mm depth is worked out by means of a processing laser, wherein the "bottom" of this trench remains in the semiconductor substrate. The U-shaped trench encloses an approximately square area in the semiconductor material of about 0.3 mm × 0.3 mm. This trench is filled with conductive silver or other conductor material, eg. As copper, filled. This results in a plan view in the U-shaped conductor in the semiconductor substrate 11 which extends about 0.5 mm deep in the latter. This leader is below as an external contact 14 designated. By means of a line 16 can this outside contact 14 be connected to a voltage source or a meter. The external contact 14 corresponds to the contact 4 in 1 ,

The semiconductor material boron-doped silicon, which is still in the interior of the outer contact 14 is now partially or up to a certain depth, z. B. up to half the depth of the external contact 14 , worked out. This can in turn be done with a processing laser.

In the resulting, approximately square opening now a small amount of powdered phosphorus (P) is introduced. The amount is determined according to the mixing rule described above, ie depending on the size of the opening or the external contact 14 so much that the desired characteristic mixing ratio of the doped silicon and the phosphorus results.

The required amount of phosphorus can easily be determined in experiments. For this purpose, a small amount of phosphorus is first introduced into the well produced and with the substrate material therein, the boron-doped silicon, z. B. fused by heat. This is most easily done again with the processing laser, which melts the phosphor located in the opening with the underlying doped silicon, wherein in the example temperatures of about 1000 ° C can be achieved. Thus arises from the two fused materials that fill at least a portion of the depression, if necessary, the desired mixture zone 12 (2 in 1 ).

Then, by means of a resistance measurement, the electrical resistance between the outer contact and one on the fused region, the mixture zone 12 , attached measuring tip determined. If the resistance is greater than 1 kΩ, further phosphorus is melted down. This is continued until, in the given example, a resistance in the forward direction of about 800 Ω or less is achieved. Normally, between three and ten steps were necessary in the experiments. Of course, for an industrial production, the exact quantities are determined beforehand to be merged components, which eliminates the described iterations and only a melting process must be made.

It should be noted at this point that the resistance of the structure thus produced is in the opposite current direction in the MΩ range. Obviously, therefore, a diode (or a plurality of diodes) has developed with a pronounced blocking effect. This diode effect of the structure exists only in the range of the characteristic mixing ratio. Outside the in 2 With the area denoted by OB, the said measurement shows high resistance values, whereby no significant difference is detectable in the measurement with reverse polarity, ie the structure behaves like an insulator.

A cautious interpretation of this behavior might look like that at the bottom of the mixture zone 12 a barrier layer 13 forms, so an np junction to the doped semiconductor substrate 11 , This could explain the electrical behavior of the inventive arrangement. Furthermore, a similar np junction or a barrier layer to the doped semiconductor substrate could also be used 11 at the outside contact 14 open left side of the structure arise or between remnants of the inside of the external contact 14 remaining (unfused) boron-doped silicon and the external contact itself.

It seems that when melting the second material in the doped Semiconductor material an oxygen or nitrogen atmosphere, for. Air, is required. Namely, the melting was in a protective gas atmosphere, for. B. in an argon atmosphere, carried out, did not work in the thus prepared radiation source in the desired Way, but also showed metrological semiconductor properties. As stated above, the mechanism of action is not yet clear.

Subsequently, the mixture zone with a contact 15 provided by a wire 17 can be connected to the other pole of the voltage source. Thereafter, the arrangement is still passivated to exclude changes due to oxidation.

The inventive light source produced in this way emits green, almost monochromatic light. It behaves as described above, thus emits a relatively soft, uniform light when operating in the forward direction, ie line 16 is at the positive pole of a low-voltage DC voltage source (about 3 V are sufficient) and line 17 connected to the negative pole.

It were currents measured in the mA range. To prevent destruction of the radiation source, usually a current limit will be required, such as by a Series resistor.

When operating in the reverse direction, ie line 16 at the negative pole and line 17 At the positive pole of a low-voltage DC voltage source (3 to 4 V), the above-described Zener effect occurs, which is accompanied by much stronger light development. This also seems to be the more interesting mode of operation, especially with greater efficiency.

At the In the reverse direction, currents in the mA range were also measured. when reaching the zener voltage of the expected, considerable Increase in the current was detected. Again, usually one Current limitation may be required, the z. B. by a constant current source or a power source with suitable internal resistance can.

That the inventive Arrangement can also be operated with AC voltage, too here the completeness mentioned here.

4 shows another embodiment of the radiation source according to the invention. In a similar way as above 3 described, in an array enclosing the substrate (not shown) of a doped semiconductor an approximately circular trench of about 0.15 mm wide and about 1 mm deep, worked out with a diameter of about 1 mm. The substrate is boron-doped silicon, that is, a p-type semiconductor. The processing is done again with a processing laser. The trench is now with a ladder, z. As copper or conductive silver filled and later forms the outer contact 24 the radiation source to be produced. It should be noted that this barrel-shaped outer contact is open at the bottom, d. h, the semiconductor material of the substrate protrudes into the interior. About half of this internal material located in the semiconductor material is then removed and the determined according to the mixing rule amount of the second material, here again phosphorus, added and merged with the underlying doped silicon until the desired resistance is reached. The result is the mixing zone 22 (2 in 1 ) of the two fused materials that practically fills the interior. At the bottom of the mixture zone 22 As explained above, presumably a semiconductor junction or a barrier layer is again formed to the doped semiconductor substrate (not shown), here presumably an np junction, possibly a further transition between external contact 24 and mixture zone 22 , These transitions are probably so within the outer contact 24 that he will be contacted by this.

The external contact 24 now gets an on connecting cable 26 , the mixture zone 22 a contact 25 with a connection cable 27 and the entire assembly is passivated, as is common in semiconductor technology.

Because this radiation source uses the same materials as the light source in 3 It also emits green, almost monochromatic light. It develops a relatively soft, uniform light when operating in the forward direction, ie line 16 is at the negative pole of a low-voltage DC voltage source and line 17 connected to the positive pole.

When operating in the reverse direction occurs again the above-described "optical Zener effect", which is accompanied by much stronger light development. Overall, the "closed" novel radiation source according to 4 no significant differences to the radiation source according to 3 ,

In 5 a further embodiment of the invention is shown, a so-called lateral arrangement of the novel radiation source. In a substrate 30 from undoped silicon is an island 31 made of boron-doped silicon, ie with p-conductivity. It is manufactured using standard semiconductor technology. Now, according to the above-mentioned mixing rule, a certain amount of phosphorus is melted or implanted into the surface of the substrate in such a way that it penetrates both into the island 31 as well as in the undoped part of the substrate 30 penetrates. This can in turn be done with a processing laser. On the one hand, the surface of the island, which is untouched by the phosphorus implantation, is contacted 31 , on the other hand, the phosphorus-implanted surface of the island 31 , The resulting mixing zone gives the mixture zone 32 that about the contact 35 and the line 37 when operating in the reverse direction with the positive pole of the voltage source 39 connected is. The island 31 of doped silicon is over the contact 34 , The administration 36 and the current limiting resistor R to the negative pole of the DC voltage source 39 connected. The generated light 38 exits the mixture zone 32 out. If one follows the above-suspected mode of action, then one must probably the emergence of a barrier layer 33 accept, at least, between the island 31 and the mixture zone 32 forms. It may also completely surround (as shown) or partially the mixture zone 32 , It should again be noted that the representation in the figures is made according to a working hypothesis and the actual Liche physical effect of the invention is currently still unknown. In addition, the figures are not executed to scale.

In 6 is a fourth embodiment of the invention shown, here a vertical structure of the novel radiation source on a conductor as a substrate. On the substrate 40 made of aluminum - this can, for. B. be an aluminum foil - a small amount of silicon is applied. This may be crystalline or powdery, doped or undoped. Immediately thereafter or next to it, a small amount of phosphorus is applied, which in turn corresponds to the characteristic mixing ratio for the desired application. The two components can also be previously mixed in the correct ratio and the finished mixture on the aluminum substrate 40 be applied; this can be z. B. also over a larger area than shown. Thereafter, the two components z. B. fused together by means of a high-energy laser. This leaves the melt, which is then the mixture zone 42 represents, on the surface of the aluminum substrate 40 , According to current understanding, it forms between the aluminum of the substrate 40 and the mixture zone 42 a pn-junction or a barrier layer. Perhaps this can be explained by the emergence of a Schottky diode. On the one hand, the aluminum substrate is contacted 40 that via wire 46 with a power source (in 6 not shown) can be connected; analogous to 5 , The other pole of the power source is via line 47 with the contact 45 on the mixture zone 42 connected. The generated light 48 As far as recognizable, it leaves the mixture zone 42 out.

7 represents a further embodiment of the invention; it is a structure similar to the one in 3 but it is less profound. In a given, boron-doped, ie p-active semiconductor substrate 51 By means of a processing laser, a U-shaped trench approximately 0.15 mm wide and only approximately 0.1 mm deep is worked out, the "bottom" of this trench remaining in the semiconductor substrate. The U-shaped trench encloses an approximately square area in the semiconductor material of less than 1 mm ² . This shallow trench is filled with conductive silver or other conductor material, eg. As copper, filled. This creates a flat U-shaped conductor as an external contact 54 in the semiconductor substrate 51 which extends only about 0.1 mm deep in the latter. By means of a line 56 this external contact becomes 54 connected to a voltage source or a meter. The external contact 54 corresponds to the contact 4 in 1 ,

The semiconductor material boron-doped silicon, which is still in the interior of the outer contact 54 is now worked out to a part. In the resulting well, a small amount of powdered phosphorus (P) is now introduced. The amount is determined according to the mixing rule described above, ie depending on the size of the opening or the external contact 54 so much that the desired, characteristic mixing ratio of the doped silicon and the phosphorus results.

Alternatively, the U-shaped conductor as an external contact 54 also on the surface of the semiconductor substrate 51 applied, z. B. be printed. Then eliminates the above-described working out of the semiconductor material within the outer contact 54 , The phosphor (P) is then directly on the surface of the semiconductor substrate 51 within the external contact 54 applied and fused by heat.

Again, one can with all caution the emergence of a barrier 53 Imagine that are at the bottom of the mixture zone 52 forms, so an np junction to the doped semiconductor substrate 51 , A similar np junction to the doped semiconductor substrate 51 is at the of the external contact 54 open side of the structure and also between the central region of the mixture zone 52 and the outside contact 54 imaginable.

Subsequently, the mixture zone 52 with a contact 55 provided by a wire 57 can be connected to the one pole of the voltage source. management 56 connects the radiation source to the other pole. Thereafter, the arrangement is still passivated to exclude changes due to oxidation.

This light source also emits green, almost monochromatic light with the materials used. It behaves as described above, thus emits a relatively soft, uniform light when operating in the forward direction, ie with line 56 is at the positive pole of a low-voltage DC voltage source and line 57 connected to the negative pole. The greater light output takes place during operation in the reverse direction, ie when reversing the aforementioned connections. Again, voltages of the order of 3 to 4 V have been found to be sufficient.

In all embodiments it should be clear that, as possible, to the radiation emission little to hinder the contact located on the mixture zone either as small as possible should be made or transparent. Also various passivation and purification steps, such as are indispensable in semiconductor technology, are not described in the implementations. The skilled person should these points do not cause a problem; they are self-evident for him.

8th represents a planar, possibly even flexible embodiment of the invention. On a rigid or flexible substrate 60 containing a conductor or semiconductor, e.g. For example, the boron-doped silicon already mentioned several times becomes a mixture of the two (or more) components containing the mixture zone by means of sputtering or another method 62 should form, applied. The amounts of components that z. B. doped silicon and phosphorus, chen corre chen on the one hand, the desired layer thickness for the mixture zone 62 on the other hand, the characteristic mixing ratio, which was previously determined by means of experiments in accordance with the description given above. The mixture zone 62 is then formed by heating the applied components.

Again, it is important again to make the range of the lowest possible forward resistance of the structure thus produced, which exists only in the range of the characteristic mixing ratio. You also have to assume that between the substrate 60 and the mixture zone 62 a barrier layer 63 forming the desired diode character of the structure.

Subsequently, the top of the mixture zone zone 62 provided with a light- or radiation-permeable, but conductive material, the electrical contact 65 to the mixture zone 62 forms. Here, for the visible range, an ITO glass or an ITO film is offered, a material with which the person skilled in the art is familiar. ITO stands for indium tin oxide; These glasses or films are conductive and translucent. The contact 65 can then by means of a line 67 be connected to the power source.

The substrate 60 is over the line 66 connected to the other pole of the voltage source. If necessary, the arrangement is still passivated to exclude changes due to oxidation.

9 shows a laser according to the invention, here with an (additional) external cavity. The production of the radiation source is in principle analogous to the preparation of the in the 3 and 4 shown embodiments, with the difference that a continuous opening is generated in the conductor or semiconductor substrate.

The in the semiconductor substrate 71 generated through opening becomes with a metallic outer contact 74 provided, lined, so to speak. At the surface of the structure has this external contact 74 an extension or nose to which the supply line 76 is appropriate. Now, in an already known manner, the melt is produced from the selected components, the amounts thereof, of course, being determined according to the characteristic mixing ratio previously determined by means of experiments in accordance with the description given above. The mixture zone 72 is then formed by heating. After that, the contact becomes 75c on the mixture zone 72 applied, of course, so that he from the outside contact 74 is isolated. He has to have the lowest possible optical losses; a conductive ITO glass as described above or a perforated electrode are suitable. An extension 75 of the contact 75c allows external contacting of the mixture zone via the supply line 77 ,

Again, it is important again to make the range of the lowest possible forward resistance of the structure thus produced, which exists only in the range of the characteristic mixing ratio. At the in 9 As you can see, this arrangement, once again an unsure interpretation, can probably assume that parts of the first material are not melted on the outer contact 74 stick to and between these and the generated mixture zone 72 a barrier layer 73 at least at some of the points shown, which effects the desired diode character of the structure.

In order to make the radiation source thus produced a laser, further structural measures are necessary. At the bottom, the contacts facing away from the end of the mixture zone 72 , ie the back facet of the laser is the external contact 74 closed and either formed itself as a mirror with high reflectivity or it is such a reflector 79 arranged on the outer con tact. At the outlet end of the mixture zone 72 , ie the exit facet of the laser are in the example still a partially reflecting mirror or reflector 70b and a collimator 70a arranged. The laser radiation 78 comes out of this collimator 70a out. The surface of the entire assembly is, as usual, still through a SiO ₂ layer 71a passivated. It is not at this point to discuss details of the laser arrangement, as those skilled in the art are familiar with it.

10 Finally, a second version of a laser according to the invention, showing some differences from in 9 includes shown laser. In principle, the production is similar, ie in the semiconductor substrate 81 a continuous opening is created with a metallic outer contact 84 is provided. At the top of the substrate 81 is the external contact 84 in turn extended to an extension or nose, on which the supply line 86 is appropriate.

Now, in the manner already described, the melt is produced from the selected components, the amounts of which are determined according to the characteristic mixing ratio which has been previously determined by means of tests in accordance with the description given above. The mixture zone 82 is then formed by heating.

Again, it is important again to meet the range of the lowest possible forward resistance of the manufactured arrangement, which indeed exists only in the range of the characteristic mixing ratio. Also at the in 10 It can be assumed, with due caution to this interpretation, that at least partially, but presumably completely, between the outer contact and the mixture zone 82 a barrier layer 83 forming the desired diode character of the structure.

At the bottom, the contacts facing away from the end of the mixture zone 82 , so the back laser facet, is a mirror 89 arranged with a high degree of reflection, here outside the actual semiconductor structure. Thus, this mirror can be mounted in each phase of the production of the semiconductor structure, possibly even after completion, which is important for the selection and construction of the mirror 89 and its coating may prove advantageous.

The surfaces of the laser are again with SiO ₂ layers 81a passivated. Immediately on the exit facet of the laser, ie at the exit end of the mixture zone 82 where the laser radiation 88 exit, are in the example still a partially reflecting exit reflector 80b and before that a collimator 80a arranged. It is therefore a laser without external cavity. As noted above, it is not intended to address details of the laser arrangement and operation that are familiar to those skilled in the art.

Of course, the construction of the in the 9 and 10 shown laser according to the invention are also combined. So a laser is the in 10 shown construction, of course, with an external cavity or an additional external cavity usable and vice versa, also the rear reflector can be arranged differently.

The 11 and 12 show a two-color light source, wherein 11 a sectional view, 12 the corresponding plan view are. It is almost a mirrored arrangement according to 3 ,

Similar in connection with 3 is described in a given, boron-doped, ie p-type semiconductor substrate 91 worked out a U-shaped, continuous opening of about 0.15 mm width. The U-shaped trench encloses an approximately square area in the semiconductor material of about 0.3 mm × 0.3 mm. This opening is filled with conductive silver or other conductor material, for. As copper, filled. This creates a U-shaped conductor in the semiconductor substrate 91 , the off senkontakt 94 , By means of a connection cable 96 can this outside contact 94 be connected to a voltage source or a meter.

The semiconductor material boron-doped silicon, which is still in the interior of the outer contact 94 is now from both sides of the semiconductor substrate 91 worked out to an experimentally determined depth. There must be a middle area 93 remain small thickness of semiconductor material.

Small amounts of the materials suitable for the color of the respective light source are now introduced into the approximately square openings thus produced on both sides of the semiconductor substrate: zinc sulfide (ZnS), introduced and fused on top, gives rise to a blue light source on top; Phosphorus (P) introduced on the bottom and fused results in a green light source. The quantities are determined according to the mixing rule described above, ie depending on the size of the opening in the outer contact 94 so much that the desired characteristic mixing ratio results from the doped silicon and the zinc sulfide or phosphorus. According to the working hypothesis, barrier layers probably arise on both sides 93a respectively. 93b as described in connection with the preceding figures.

The required amounts are, as described above, in experiments determined by means of a resistance measurement.

Of course, in the course of the manufacturing process, a passageway in the semiconductor substrate can be created, the contacting or the power supply to the mixture zone 92b the on the underside of Halbleitersub strats 91 created light source allows from above. The power supply for the light source on the top is similar to the embodiments described above via a contact 95a on the mixture zone 92a ,

For power supply, the two mixture zones 92a and 92b with contacts 95a respectively. 95b provided by lines 97a respectively. 97b can be connected to a voltage source. The external contact 94 is common to both light sources. At the end, the arrangement is still on both sides with SiO ₂ layers 91a Passiviert, which are avoided in the usual way changes by oxidation.

12 shows the top view of the arrangement thus prepared and requires no particular explanation so far. The contact 95a is there with an opening on the light exit surface of the mixture zone 92a shown. This contact 95a Of course, it can also be designed differently, for. B. as a simple tongue that leaves enough area for the light emission, or as a conductive, transparent electrode, z. As transparent ITO glass electrode, as already mentioned above. The same applies to the contact 95b which is located in the bottom of the 11 and 12 is shown two-colored light source.

The inventive light source produced in this way gives on the top blue, practically monochromatic light 98a from and on the bottom just as green light 98b , Because the middle area 93 is translucent, the light source thus produced can be used from both sides and also serve for color mixing.

Each of the two light sources can be operated independently of the other. It behaves as described above, thus emits a relatively soft, uniform light when operating in the forward direction, ie line 96 is at the positive pole of a low-voltage DC voltage source and line 97a respectively. 97b connected to the negative pole.

When operating in the reverse direction, ie line 96 at the negative pole and line 97a respectively. 97b At the positive pole of a low-voltage DC voltage source, the above-described Zener effect occurs, which is accompanied by much stronger light development. The fact that the arrangement according to the invention can also be operated with alternating voltage should also be mentioned here for the sake of completeness.

13 Finally, shows another example of a laser according to the invention. To improve the efficiency of the contacting of the mixture zone is changed so that the exit facet of the laser remains free of contacts. Thus, the generated laser radiation suffers 108 less losses. Unlike in 10 The laser ends the external contact 104 still within the semiconductor body 101 from z. B. boron-doped silicon; it does not extend through the entire semiconductor body. There is a ladder on the back facet of the laser 109 , z. B. of copper, both as a reflector as well as a contact for the mixture zone 102 serves. This leader 109 is opposite to the semiconductor 101 isolated, e.g. B. by embedding in the passivation serving SiO ₂ layer 101 , Otherwise, this laser is similar to the one in 9 shown laser built, however, is the reflector 100b arranged directly on the front facet. As usual, a collimator serves 100a for bundling the emerging radiation. The barrier layer 103 is, as indicated, again within the enclosing outer contact 104 suspected, but probably extends to the back end of the mixture zone 102 ,

professionals it will be no effort prepare, more versions and implement variations of the invention.

Claims (43)

Electrically Excitable Solid State Radiation Source - Having At Least Two Interactive, Conductive Zones, First (1) and Second ( 2 ), wherein at least one zone has semiconductor properties, - with a barrier layer ( 3 ) between the first and second zones and - with at least one contact each ( 4 . 5 ) at each of the two power supply zones, characterized in that - the first zone ( 1 ) is or contains a conductor or semiconductor and - the second zone ( 2 ) is a preferably transparent or translucent semiconducting mixture of at least two materials, namely a first material from Group 14 of the Periodic Table and a second material from Group 13 or 15 of the Periodic Table, wherein the mixing ratio of the first to the second material is greater than 1: 100th Radiation source according to claim 1, characterized that the first material is silicon. Radiation source according to claim 1, characterized the first material is germanium or carbon. Radiation source according to claim 2 or 3, characterized characterized in that the second material is phosphorus or arsenic. Radiation source according to claim 1 or 2, characterized characterized in that the second material from group 13 or 15 of the Periodic table is replaced by zinc sulfide. Radiation source according to at least one of the preceding Claims, characterized in that the material mixture bound oxygen and / or nitrogen. Radiation source according to at least one of the preceding Claims, characterized in that the material mixture amorphous and / or polycrystalline. Radiation source according to at least one of claims 1 to 6, characterized in that the material mixture is an alloy is or contains such. Radiation source according to at least one of the preceding claims, characterized in that the first material of the second zone ( 2 ), in particular boron-doped silicon. Radiation source according to at least one of the preceding claims, characterized in that the first zone ( 1 ) consists of a doped semiconductor, in particular of crystalline, boron-doped silicon. Radiation source according to at least one of claims 1 to 9, characterized in that the first zone ( 1 ) from a ladder ( 14 . 24 . 40 . 54 . 60 . 74 . 84 . 94 ) consists. Radiation source according to at least one of the preceding Claims, characterized in that it generates green light, wherein silicon used as first material and phosphor as second material become. Radiation source according to at least one of claims 1 to 11, characterized in that it generates blue light, wherein Silicon as the first material and zinc sulfide as the second material be used. Radiation source according to at least one of claims 1 to 11, characterized in that it generates red light, wherein Silicon is used as first material and arsenic as second material become. Radiation source according to at least one of claims 1 to 11, characterized in that it generates yellow light, wherein Silicon is used as the first material and sulfur as the second material become. Radiation source according to at least one of the preceding claims, characterized in that in a common solid more than one radiation-generating arrangement of the first zone ( 91 . 93 ), second zone ( 92a . 92b ) and barrier layer ( 93a . 93b ) are arranged. Radiation source according to Claim 17, characterized in that two radiation-generating arrangements of the first zone (FIG. 91 . 93 ), second zone ( 92a . 92b ) and barrier layer ( 93a . 93b ) are provided. Radiation source according to Claim 18, characterized in that the section of the first zone (2) lying between the two radiation-generating arrangements ( 93 ) is translucent or translucent. Radiation source according to at least one of the preceding claims, characterized gekennzeich net, that in the second zone ( 2 ) contains more than one material mixture to produce a predetermined mixed light, in particular white light. Radiation source according to at least one of the preceding claims, characterized in that - the materials of the second zone ( 2 ) have different electronegativities. Radiation source according to at least one of the preceding Claims, thereby marked that - the Barrier layer is a Zener barrier layer, wherein in particular the Zener voltage greater than 1 V is. Radiation source according to at least one of the preceding claims, characterized in that the DC resistance, measured between the two contacts ( 4 . 5 ; 14 . 15 ; 24 . 25 ; 34 . 35 ;) in the forward direction, not more than 1000 Ω, preferably less than 800 Ω. Radiation source according to Claim 23, characterized that the DC resistance in the forward direction less than 80 Ω. Radiation source according to at least one of the preceding claims, characterized in that - the second zone ( 12 . 22 ) is embedded and at least partially enveloped by a ladder ( 14 . 24 ) in a semiconductor substrate containing the first zone ( 11 ), - the leader ( 14 . 24 ) the contact to the first zone ( 11 ) and - the barrier layer ( 13 . 23 ) at least between the first and the second zone into that of the partial enclosure by the conductor ( 14 . 24 ) is left free areas. Radiation source according to claim 25, characterized in that - the barrier layer ( 13 . 24 ) between the first and the second zone at least at one end of the second zone ( 12 . 22 ) within the envelope by the conductor ( 14 . 24 ) and - contact ( 15 . 25 ) is arranged to the second zone at the other, located opposite the barrier layer end of this zone. Radiation source according to at least one of claims 1 to 15, characterized in that - the first zone ( 31 ) one in the surface of the semiconductor substrate ( 30 ) embedded, doped semiconductor zone and - the second zone ( 32 ) one in the immediate vicinity of the first zone ( 32 ) also into the surface of a semiconductor substrate ( 30 ) is embedded in the mixture of materials, at least between the first zone ( 31 ) and the second zone ( 32 ) a barrier layer ( 33 ) is available. Radiation source according to claim 27, characterized in that the barrier layer ( 33 ) at least part of the second zone ( 32 ) in the semiconductor substrate ( 30 ) encloses. Radiation source according to at least one of claims 1 to 15, characterized in that - the second zone ( 42 ) on the surface of a preferably metallic substrate ( 40 ), which also forms the first zone, is applied material mixture and - between the first zone ( 40 ) and the second zone ( 42 ) a barrier layer is arranged. Radiation source according to at least one of claims 1 to 15, characterized in that - the second zone ( 62 ) on the surface of a preferably metallic and / or flexible substrate ( 60 ), which also forms the first zone, is a surface-applied layer of the material mixture and - between the first zone ( 60 ) and the second zone ( 62 ) a barrier layer ( 63 ) is arranged. Solid-state lasers, characterized in that - he a radiation source according to at least one of the claims 1 to 15 contains which is operated in the reverse direction. Solid state laser according to claim 31, characterized in that - the second zone ( 72 . 82 . 92 . 102 ) is at least partially enveloped by a conductor material ( 74 . 84 . 94 . 104 ), the latter and / or a semiconductor material ( 71 . 81 . 91 . 101 ) form the first zone and the conductor material ( 74 . 84 . 94 . 102 ) represents the contact with the first zone if necessary and - the barrier layer ( 73 . 83 . 93 . 103 ) is located between the second and the first zone, at least in the areas left free by the partial cladding by the conductor material. Solid state laser according to claim 31 or 32, characterized in that - the second zone ( 82 . 102 ) forms an inner cavity, at whose end facets reflectors ( 80b . 89 ; 109 . 100b ) are provided. Solid state laser according to at least one of claims 31 to 33, characterized in that - additionally or alternatively an external cavity ( 70b ) is provided. Solid-state laser according to at least one of claims 31 to 34, characterized in that at least one mirror, preferably the mirror arranged on the rear laser facet ( 79 . 109 ) within the semiconductor substrate ( 71 . 101 ) is arranged. Solid-state laser according to at least one of Claims 33 to 35, characterized in that a mirror arranged on the rear-side laser facet ( 109 ) simultaneously the contact for the second zone ( 102 ). Method for operating an electrically excited solid-state radiation source according to at least one of Claims 1 to 30, characterized in that at the two contacts ( 4 . 5 ; 14 . 15 ) a DC voltage is applied such that the barrier layer ( 3 . 13 ) is operated in the forward direction. Method for operating an electrically excited solid-state radiation source according to at least one of Claims 1 to 30 or a solid-state laser according to at least one of Claims 31 to 36, characterized in that at the two contacts ( 4 . 5 ; 14 . 15 ; 74 . 75 ; 84 . 85 ) a DC voltage is applied such that the barrier layer ( 3 . 13 ; 73 . 83a . 83b ) is operated in the reverse direction. Method for operating an electrically excited solid-state radiation source according to at least one of Claims 1 to 30, characterized in that at the two contacts ( 4 . 5 ; 14 . 15 ) an alternating voltage is applied. Method for producing an electrically excited solid-state radiation source - having at least two different, interacting, preferably adjoining, conductive zones, a first ( 11 . 31 ) and a second zone ( 12 . 32 ), of which at least one has semiconductor properties, - with a barrier layer ( 13 . 33 ) between the first and second zones and - with at least one contact each ( 14 . 15 ; 34 . 35 ) at each of the two power supply zones, characterized in that - one to the first zone ( 11 . 31 ) adjacent second zone ( 12 . 32 ) is prepared by melting together a preferably amorphous, transparent or translucent, semiconducting mixture of at least two materials, namely a first material from Group 14 of the Periodic Table and a second material from Group 13 or 15 of the Periodic Table, wherein the mixing ratio of the first to the second material greater than 1: 100. Method according to claim 40, characterized in that that - the Melting together in an oxygen and / or nitrogen containing The atmosphere, especially in air becomes. Method for producing a solid-state laser - having at least two different, interacting, preferably adjacent, conductive zones, a first ( 71 . 81 . 101 ) and a second zone ( 72 . 82 . 102 ), of which at least one has semiconductor properties, - with a barrier layer ( 73 . 83a . 83b . 103 ) between the first and second zones and - with at least one contact each ( 74 . 75 . 75c ; 84 . 85 . 85c ; 104 . 109 ) at each of the two zones for the power supply, wherein - in a semiconductor substrate ( 71 . 81 . 101 ) and / or a ladder ( 74 . 84 . 104 ) forming the first zone, a second zone adjacent to this first zone ( 72 . 82 . 102 ) is prepared by melting together a preferably amorphous, transparent or translucent, semiconducting mixture of at least two materials, namely a first material from Group 14 of the Periodic Table and a second material from Group 13 or 15 of the Periodic Table, wherein the mixing ratio of the first to the second material greater than 1: 100 and the second zone ( 72 . 82 . 102 ) is at least partially enveloped with a conductor ( 74 . 84 . 104 ). Method for producing a solid-state laser according to claim 42, characterized in that - the melting together in an atmosphere containing oxygen and / or nitrogen, in particular carried out in air becomes. Method for producing a solid-state radiation source according to claim 40 or a solid-state laser according to claim 42, characterized in that - for the production of the first Zone silicon, in particular doped silicon, and / or conductive silver, - for the production the second zone as the first material silicon, in particular doped Silicon, and - when second material phosphorus, arsenic, sulfur and / or zinc sulfide used becomes.