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DE102005007423B3 - Verfahren zur Integration eines elektronischen Bauteils oder dergleichen in ein Substrat - Google Patents

Verfahren zur Integration eines elektronischen Bauteils oder dergleichen in ein Substrat Download PDF

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Publication number
DE102005007423B3
DE102005007423B3 DE102005007423A DE102005007423A DE102005007423B3 DE 102005007423 B3 DE102005007423 B3 DE 102005007423B3 DE 102005007423 A DE102005007423 A DE 102005007423A DE 102005007423 A DE102005007423 A DE 102005007423A DE 102005007423 B3 DE102005007423 B3 DE 102005007423B3
Authority
DE
Germany
Prior art keywords
substrate
layer
dielectric
cavity
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn - After Issue
Application number
DE102005007423A
Other languages
German (de)
English (en)
Inventor
Mojtaba Joodaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Germany GmbH
Original Assignee
Atmel Germany GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Germany GmbH filed Critical Atmel Germany GmbH
Priority to DE102005007423A priority Critical patent/DE102005007423B3/de
Priority to DE502006000662T priority patent/DE502006000662D1/de
Priority to EP06002799A priority patent/EP1696481B1/de
Priority to CN200610008557.5A priority patent/CN1822339A/zh
Priority to US11/356,137 priority patent/US7396739B2/en
Application granted granted Critical
Publication of DE102005007423B3 publication Critical patent/DE102005007423B3/de
Anticipated expiration legal-status Critical
Withdrawn - After Issue legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Micromachines (AREA)
DE102005007423A 2005-02-18 2005-02-18 Verfahren zur Integration eines elektronischen Bauteils oder dergleichen in ein Substrat Withdrawn - After Issue DE102005007423B3 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE102005007423A DE102005007423B3 (de) 2005-02-18 2005-02-18 Verfahren zur Integration eines elektronischen Bauteils oder dergleichen in ein Substrat
DE502006000662T DE502006000662D1 (de) 2005-02-18 2006-02-11 Verfahren zur Integration eines elektronischen Bauteils in einer Substratkavität
EP06002799A EP1696481B1 (de) 2005-02-18 2006-02-11 Verfahren zur Integration eines elektronischen Bauteils in einer Substratkavität
CN200610008557.5A CN1822339A (zh) 2005-02-18 2006-02-17 用于将电子部件或类似部件集成至衬底中的方法
US11/356,137 US7396739B2 (en) 2005-02-18 2006-02-17 Method for integrating an electronic component or similar into a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005007423A DE102005007423B3 (de) 2005-02-18 2005-02-18 Verfahren zur Integration eines elektronischen Bauteils oder dergleichen in ein Substrat

Publications (1)

Publication Number Publication Date
DE102005007423B3 true DE102005007423B3 (de) 2006-06-14

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Family Applications (2)

Application Number Title Priority Date Filing Date
DE102005007423A Withdrawn - After Issue DE102005007423B3 (de) 2005-02-18 2005-02-18 Verfahren zur Integration eines elektronischen Bauteils oder dergleichen in ein Substrat
DE502006000662T Active DE502006000662D1 (de) 2005-02-18 2006-02-11 Verfahren zur Integration eines elektronischen Bauteils in einer Substratkavität

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE502006000662T Active DE502006000662D1 (de) 2005-02-18 2006-02-11 Verfahren zur Integration eines elektronischen Bauteils in einer Substratkavität

Country Status (4)

Country Link
US (1) US7396739B2 (zh)
EP (1) EP1696481B1 (zh)
CN (1) CN1822339A (zh)
DE (2) DE102005007423B3 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010022204A1 (de) * 2010-05-20 2011-11-24 Epcos Ag Elektrisches Bauelement mit flacher Bauform und Herstellungsverfahren

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101517719B (zh) * 2006-09-18 2012-08-29 Nxp股份有限公司 制造半导体基板中的垂直接触的方法
CN103065985B (zh) * 2011-10-21 2015-04-22 中国科学院上海微系统与信息技术研究所 双面布线封装的圆片级大厚度光敏bcb背面制作方法
DE102015216694B3 (de) * 2015-09-01 2016-09-29 Robert Bosch Gmbh Elektronisches Bauelement mit selbstisolierenden Zellen und Verfahren zur Isolierung fehlerhafter Zellen

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2202673A (en) * 1987-03-26 1988-09-28 Haroon Ahmed Multiplechip assembly
US4797715A (en) * 1985-11-05 1989-01-10 U.S. Philips Corporation Optoelectric component for surface mounting
GB2224600A (en) * 1988-10-29 1990-05-09 Stc Plc Circuit assembly
EP0478426A1 (fr) * 1990-09-28 1992-04-01 Thomson-Csf Procédé de réalisation d'un module hybride
DE19720300A1 (de) * 1996-06-03 1997-12-04 Cis Inst Fuer Mikrosensorik E Elektronisches Hybrid-Bauelement und Verfahren zu seiner Herstellung
WO2001024259A2 (en) * 1999-09-30 2001-04-05 Alpha Industries, Inc. Semiconductor packaging

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US5008213A (en) * 1988-12-09 1991-04-16 The United States Of America As Represented By The Secretary Of The Air Force Hybrid wafer scale microcircuit integration
AU5030100A (en) * 1999-05-19 2000-12-05 California Institute Of Technology High performance mems thin-film teflon electret microphone
US6599761B2 (en) * 2001-07-26 2003-07-29 Hewlett-Packard Development Company Monitoring and test structures for silicon etching
JP2004311768A (ja) * 2003-04-08 2004-11-04 Shinko Electric Ind Co Ltd 基板の製造方法及び半導体装置用基板及び半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4797715A (en) * 1985-11-05 1989-01-10 U.S. Philips Corporation Optoelectric component for surface mounting
GB2202673A (en) * 1987-03-26 1988-09-28 Haroon Ahmed Multiplechip assembly
GB2224600A (en) * 1988-10-29 1990-05-09 Stc Plc Circuit assembly
EP0478426A1 (fr) * 1990-09-28 1992-04-01 Thomson-Csf Procédé de réalisation d'un module hybride
DE19720300A1 (de) * 1996-06-03 1997-12-04 Cis Inst Fuer Mikrosensorik E Elektronisches Hybrid-Bauelement und Verfahren zu seiner Herstellung
WO2001024259A2 (en) * 1999-09-30 2001-04-05 Alpha Industries, Inc. Semiconductor packaging

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010022204A1 (de) * 2010-05-20 2011-11-24 Epcos Ag Elektrisches Bauelement mit flacher Bauform und Herstellungsverfahren
DE102010022204A8 (de) * 2010-05-20 2012-05-16 Epcos Ag Elektrisches Bauelement mit flacher Bauform und Herstellungsverfahren
US9084366B2 (en) 2010-05-20 2015-07-14 Epcos Ag Electric component having a shallow physical shape, and method of manufacture
DE102010022204B4 (de) * 2010-05-20 2016-03-31 Epcos Ag Elektrisches Bauelement mit flacher Bauform und Herstellungsverfahren

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CN1822339A (zh) 2006-08-23
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US7396739B2 (en) 2008-07-08
EP1696481B1 (de) 2008-04-23
US20060189094A1 (en) 2006-08-24
EP1696481A2 (de) 2006-08-30

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