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DE10125036B8 - Verfahren zum Schützen einer Solarzelle - Google Patents

Verfahren zum Schützen einer Solarzelle Download PDF

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Publication number
DE10125036B8
DE10125036B8 DE10125036A DE10125036A DE10125036B8 DE 10125036 B8 DE10125036 B8 DE 10125036B8 DE 10125036 A DE10125036 A DE 10125036A DE 10125036 A DE10125036 A DE 10125036A DE 10125036 B8 DE10125036 B8 DE 10125036B8
Authority
DE
Germany
Prior art keywords
protecting
solar cell
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10125036A
Other languages
English (en)
Other versions
DE10125036B4 (de
DE10125036A1 (de
Inventor
Kenzo Kawano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE10125036A1 publication Critical patent/DE10125036A1/de
Application granted granted Critical
Publication of DE10125036B4 publication Critical patent/DE10125036B4/de
Publication of DE10125036B8 publication Critical patent/DE10125036B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/70—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes
    • H10F19/75—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE10125036A 2000-05-24 2001-05-22 Verfahren zum Schützen einer Solarzelle Expired - Fee Related DE10125036B8 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000153572 2000-05-24
JP00-153572 2000-05-24
JP2001-148054 2001-05-17
JP2001148054A JP3888860B2 (ja) 2000-05-24 2001-05-17 太陽電池セルの保護方法

Publications (3)

Publication Number Publication Date
DE10125036A1 DE10125036A1 (de) 2002-02-14
DE10125036B4 DE10125036B4 (de) 2012-01-26
DE10125036B8 true DE10125036B8 (de) 2012-04-26

Family

ID=26592510

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10125036A Expired - Fee Related DE10125036B8 (de) 2000-05-24 2001-05-22 Verfahren zum Schützen einer Solarzelle

Country Status (3)

Country Link
US (1) US6476313B2 (de)
JP (1) JP3888860B2 (de)
DE (1) DE10125036B8 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278054B1 (en) * 1998-05-28 2001-08-21 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode
JP2001189483A (ja) * 1999-10-18 2001-07-10 Sharp Corp バイパス機能付太陽電池セルおよびバイパス機能付き多接合積層型太陽電池セルおよびそれらの製造方法
US6864414B2 (en) * 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
US20090227095A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
CN102099870A (zh) 2008-06-11 2011-06-15 因特瓦克公司 用于在太阳能电池制作中使用的专用注入系统和方法
DE102009013276A1 (de) * 2009-05-12 2010-11-25 Eulektra Gmbh Restlichtaktivierungsverfahren für Vollausnutzung von Flachdächern für Aufstellung von Photovoltaik Generator Modulen
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US8604330B1 (en) 2010-12-06 2013-12-10 4Power, Llc High-efficiency solar-cell arrays with integrated devices and methods for forming them
US8134217B2 (en) * 2010-12-14 2012-03-13 Sunpower Corporation Bypass diode for a solar cell
TWI506719B (zh) 2011-11-08 2015-11-01 Intevac Inc 基板處理系統及方法
US9912290B2 (en) * 2012-06-18 2018-03-06 Sunpower Corporation High current burn-in of solar cells
WO2014100506A1 (en) 2012-12-19 2014-06-26 Intevac, Inc. Grid for plasma ion implant
JP6350981B2 (ja) * 2013-11-28 2018-07-04 パナソニックＩｐマネジメント株式会社 太陽電池
US20150179847A1 (en) * 2013-12-20 2015-06-25 Seung Bum Rim Built-in bypass diode
JP1676513S (de) * 2014-05-27 2021-01-12
US10673379B2 (en) * 2016-06-08 2020-06-02 Sunpower Corporation Systems and methods for reworking shingled solar cell modules
CN116314415B (zh) * 2023-02-10 2024-09-27 天合光能股份有限公司 背接触太阳能电池和制备方法
CN117976743B (zh) * 2024-04-02 2024-07-26 浙江爱旭太阳能科技有限公司 太阳能电池片、电池组件和光伏系统

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4323719A (en) * 1979-08-23 1982-04-06 Unisearch Limited Integrated solar cells and shunting diodes
JPS5843557A (ja) * 1981-09-08 1983-03-14 Toshiba Corp 半導体装置
US4933022A (en) * 1988-11-14 1990-06-12 Board Of Trustees Of The Leland Stanford Univ. & Electric Power Research Institute Solar cell having interdigitated contacts and internal bypass diodes
US4935067A (en) * 1988-02-10 1990-06-19 Mitsubishi Denki Kabushiki Kaisha Solar cell and fabrication method thereof
DE4136827A1 (de) * 1990-11-09 1992-05-14 Sharp Kk Solarzelle mit bypassdiode
DE3819671C2 (de) * 1987-07-08 1993-09-02 Mitsubishi Denki K.K., Tokio/Tokyo, Jp
US5330584A (en) * 1991-10-17 1994-07-19 Sharp Kabushiki Kaisha Solar cell
EP0693787A2 (de) * 1994-07-19 1996-01-24 Sharp Kabushiki Kaisha Solarzelle mit integrierter Umleitungsfunktion
JPH10163511A (ja) * 1996-12-03 1998-06-19 Sharp Corp 太陽電池セル

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62106663A (ja) 1985-11-02 1987-05-18 Matsushita Electronics Corp 半導体装置
US4759803A (en) * 1987-08-07 1988-07-26 Applied Solar Energy Corporation Monolithic solar cell and bypass diode system

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4323719A (en) * 1979-08-23 1982-04-06 Unisearch Limited Integrated solar cells and shunting diodes
JPS5843557A (ja) * 1981-09-08 1983-03-14 Toshiba Corp 半導体装置
DE3819671C2 (de) * 1987-07-08 1993-09-02 Mitsubishi Denki K.K., Tokio/Tokyo, Jp
US4935067A (en) * 1988-02-10 1990-06-19 Mitsubishi Denki Kabushiki Kaisha Solar cell and fabrication method thereof
US4933022A (en) * 1988-11-14 1990-06-12 Board Of Trustees Of The Leland Stanford Univ. & Electric Power Research Institute Solar cell having interdigitated contacts and internal bypass diodes
DE4136827A1 (de) * 1990-11-09 1992-05-14 Sharp Kk Solarzelle mit bypassdiode
US5330584A (en) * 1991-10-17 1994-07-19 Sharp Kabushiki Kaisha Solar cell
EP0693787A2 (de) * 1994-07-19 1996-01-24 Sharp Kabushiki Kaisha Solarzelle mit integrierter Umleitungsfunktion
JPH10163511A (ja) * 1996-12-03 1998-06-19 Sharp Corp 太陽電池セル

Also Published As

Publication number Publication date
JP2002050783A (ja) 2002-02-15
US6476313B2 (en) 2002-11-05
DE10125036B4 (de) 2012-01-26
US20020007846A1 (en) 2002-01-24
DE10125036A1 (de) 2002-02-14
JP3888860B2 (ja) 2007-03-07

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Legal Events

Date Code Title Description
OR8 Request for search as to paragraph 43 lit. 1 sentence 1 patent law
8105 Search report available
8110 Request for examination paragraph 44
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final

Effective date: 20120427

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee