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DD291877A5 - METHOD FOR PRODUCING SELF-ADJUSTING SILICIDE CONTACTS ON SEMICONDUCTOR ARRANGEMENTS - Google Patents

METHOD FOR PRODUCING SELF-ADJUSTING SILICIDE CONTACTS ON SEMICONDUCTOR ARRANGEMENTS

Info

Publication number
DD291877A5
DD291877A5 DD33742290A DD33742290A DD291877A5 DD 291877 A5 DD291877 A5 DD 291877A5 DD 33742290 A DD33742290 A DD 33742290A DD 33742290 A DD33742290 A DD 33742290A DD 291877 A5 DD291877 A5 DD 291877A5
Authority
DD
German Democratic Republic
Prior art keywords
silicide contacts
producing self
semiconductor arrangements
adjusting
adjusting silicide
Prior art date
Application number
DD33742290A
Other languages
German (de)
Inventor
Joerg Herold
Reinhard Portius
Thomas Koschny
Original Assignee
Mikroelektronik "Karl Marx" Erfurt,De
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mikroelektronik "Karl Marx" Erfurt,De filed Critical Mikroelektronik "Karl Marx" Erfurt,De
Priority to DD33742290A priority Critical patent/DD291877A5/en
Publication of DD291877A5 publication Critical patent/DD291877A5/en

Links

DD33742290A 1990-01-31 1990-01-31 METHOD FOR PRODUCING SELF-ADJUSTING SILICIDE CONTACTS ON SEMICONDUCTOR ARRANGEMENTS DD291877A5 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DD33742290A DD291877A5 (en) 1990-01-31 1990-01-31 METHOD FOR PRODUCING SELF-ADJUSTING SILICIDE CONTACTS ON SEMICONDUCTOR ARRANGEMENTS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD33742290A DD291877A5 (en) 1990-01-31 1990-01-31 METHOD FOR PRODUCING SELF-ADJUSTING SILICIDE CONTACTS ON SEMICONDUCTOR ARRANGEMENTS

Publications (1)

Publication Number Publication Date
DD291877A5 true DD291877A5 (en) 1991-07-11

Family

ID=5616162

Family Applications (1)

Application Number Title Priority Date Filing Date
DD33742290A DD291877A5 (en) 1990-01-31 1990-01-31 METHOD FOR PRODUCING SELF-ADJUSTING SILICIDE CONTACTS ON SEMICONDUCTOR ARRANGEMENTS

Country Status (1)

Country Link
DD (1) DD291877A5 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502004A (en) * 1992-10-05 1996-03-26 Samsung Electronics Co., Ltd. Method for manufacturing a semiconductor device with heat treated diffusion layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502004A (en) * 1992-10-05 1996-03-26 Samsung Electronics Co., Ltd. Method for manufacturing a semiconductor device with heat treated diffusion layers

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Legal Events

Date Code Title Description
RPI Change in the person, name or address of the patentee (searches according to art. 11 and 12 extension act)
ENJ Ceased due to non-payment of renewal fee