CS162686B2 - - Google Patents
Info
- Publication number
- CS162686B2 CS162686B2 CS4585A CS458569A CS162686B2 CS 162686 B2 CS162686 B2 CS 162686B2 CS 4585 A CS4585 A CS 4585A CS 458569 A CS458569 A CS 458569A CS 162686 B2 CS162686 B2 CS 162686B2
- Authority
- CS
- Czechoslovakia
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/119—Phosphides of gallium or indium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US74090368A | 1968-06-28 | 1968-06-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
CS162686B2 true CS162686B2 (cs) | 1975-07-15 |
Family
ID=24978545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CS4585A CS162686B2 (cs) | 1968-06-28 | 1969-06-27 |
Country Status (11)
Country | Link |
---|---|
US (1) | US3592704A (cs) |
JP (1) | JPS4814508B1 (cs) |
BE (1) | BE734071A (cs) |
CH (1) | CH494518A (cs) |
CS (1) | CS162686B2 (cs) |
DE (1) | DE1932130B2 (cs) |
FR (1) | FR2011768A1 (cs) |
GB (1) | GB1279674A (cs) |
NL (1) | NL149642B (cs) |
PL (1) | PL71396B1 (cs) |
SE (1) | SE342965B (cs) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3689330A (en) * | 1969-04-18 | 1972-09-05 | Sony Corp | Method of making a luminescent diode |
BE754437A (fr) * | 1969-08-08 | 1971-01-18 | Western Electric Co | Dispositif electroluminescent ameliore |
BE789732A (fr) * | 1971-10-08 | 1973-02-01 | Western Electric Co | Laser a cristal de semi-conducteur ayant un intervalle indirectentre bandes d'energie |
US3870575A (en) * | 1972-03-21 | 1975-03-11 | Sony Corp | Fabricating a gallium phosphide device |
US3865655A (en) * | 1973-09-24 | 1975-02-11 | Rca Corp | Method for diffusing impurities into nitride semiconductor crystals |
JPS5596629A (en) * | 1979-01-17 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Method of epitaxially growing in liquid phase |
-
1968
- 1968-06-28 US US740903A patent/US3592704A/en not_active Expired - Lifetime
-
1969
- 1969-06-04 BE BE734071D patent/BE734071A/xx not_active IP Right Cessation
- 1969-06-19 SE SE8765/69A patent/SE342965B/xx unknown
- 1969-06-23 FR FR6920980A patent/FR2011768A1/fr not_active Withdrawn
- 1969-06-24 PL PL1969134363A patent/PL71396B1/pl unknown
- 1969-06-25 DE DE19691932130 patent/DE1932130B2/de not_active Withdrawn
- 1969-06-25 GB GB32034/69A patent/GB1279674A/en not_active Expired
- 1969-06-27 NL NL696909924A patent/NL149642B/xx not_active IP Right Cessation
- 1969-06-27 CH CH990269A patent/CH494518A/de not_active IP Right Cessation
- 1969-06-27 JP JP5045069A patent/JPS4814508B1/ja active Pending
- 1969-06-27 CS CS4585A patent/CS162686B2/cs unknown
Also Published As
Publication number | Publication date |
---|---|
GB1279674A (en) | 1972-06-28 |
FR2011768A1 (cs) | 1970-03-06 |
SE342965B (cs) | 1972-02-21 |
BE734071A (cs) | 1969-11-17 |
CH494518A (de) | 1970-07-31 |
DE1932130B2 (de) | 1971-03-18 |
NL6909924A (cs) | 1969-12-30 |
US3592704A (en) | 1971-07-13 |
NL149642B (nl) | 1976-05-17 |
JPS4814508B1 (cs) | 1973-05-08 |
DE1932130A1 (de) | 1970-01-02 |
PL71396B1 (cs) | 1974-06-29 |