CN2492947Y - Amorphous Aluminum Indium Gallium Nitride Light Emitting Diode Device - Google Patents

Abstract

The utility model relates to an amorphous system AlInGaN (aluminium indium gallium nitride) emitting diode device, it is on a gallium nitride or sapphire's substrate, forms multilayer single crystal system or polycrystal system compound semiconductor layer with vapour phase growth mode, adds i type, p type and/or n type impurity respectively to form emitting diode subassembly structure, realize the high luminous efficiency effect.

Description

Amorphous Aluminum Indium Gallium Nitride Light Emitting Diode Device

field of invention

The utility model relates to an amorphous system AlInGaN (aluminum indium gallium nitride) light-emitting diode device, which is formed on the first p-type amorphous compound semiconductor layer of the amorphous system aluminum indium gallium nitride (AlInGaN) light-emitting diode assembly sequentially forming a p-type single crystal or polycrystalline compound semiconductor layer, a single crystal or polycrystalline compound semiconductor impurity-doped layer, a p/n single crystal or polycrystalline compound semiconductor layer, and an n-type single crystal or The polycrystalline compound semiconductor layer is formed sequentially on the n-type amorphous compound semiconductor layer with a p/n single crystal or polycrystalline compound semiconductor layer, a single crystal or polycrystalline compound semiconductor impurity-doped layer, and a first Two p-type single crystal or polycrystalline compound semiconductor layers and a first p-type single crystal or polycrystalline compound semiconductor layer.

Background technique

At present, the traditional amorphous AlInGaN light-emitting diode device, please refer to FIG. 1 and FIG. 2, wherein FIG. 1 shows that a first p-type amorphous compound semiconductor layer 102 is sequentially formed on a p-type gallium nitride substrate 100. , a second p-type amorphous compound semiconductor layer 104, an amorphous compound semiconductor impurity-doped layer 106, a p/n amorphous compound semiconductor layer 108, and an n-type amorphous compound semiconductor layer 110;

As shown in FIG. 2, an n-type amorphous compound semiconductor layer 202, a p/n amorphous compound semiconductor layer 204, an amorphous compound semiconductor impurity-doped layer 206, a a second p-type amorphous compound semiconductor layer 208 and a first p-type amorphous compound semiconductor layer 210;

By providing p/n junctions therebetween, high luminous efficiency and cost reduction can be achieved.

However, it cannot be applied to single crystal or polycrystalline AlInGaN light emitting diodes.

Contents of the invention

The utility model aims to further improve the design of the above-mentioned device, which is to sequentially form a p-type single crystal or polycrystalline compound semiconductor on the first p-type amorphous compound semiconductor layer of the amorphous AlInGaN light-emitting diode device layer, a single crystal or polycrystalline compound semiconductor impurity-doped layer, a p/n single crystal or polycrystalline compound semiconductor layer, and an n-type single crystal or polycrystalline compound semiconductor layer.

Another object of the present invention is to provide a light-emitting diode component structure that can achieve high luminous efficiency effects, which is to sequentially form a p/n on the n-type amorphous compound semiconductor layer of the amorphous AlInGaN light-emitting diode device. Single crystal or polycrystalline compound semiconductor layer, a single crystal or polycrystalline compound semiconductor impurity-doped layer, a second p-type single crystal or polycrystalline compound semiconductor layer and a first p-type single crystal or polycrystalline compound semiconductor layer.

In order to achieve the above object, the utility model proposes an amorphous aluminum indium gallium nitride light-emitting diode device, which sequentially forms a first p-type amorphous compound semiconductor layer, a first Two p-type single crystal or polycrystalline compound semiconductor layers, a single crystal or polycrystalline compound semiconductor impurity-doped layer, a p/n single crystal or polycrystalline compound semiconductor layer, and an n-type single crystal or polycrystalline compound semiconductor layer compound semiconductor layer;

In this way, the light-emitting diode assembly structure is formed to achieve the effect of high luminous efficiency.

An amorphous aluminum indium gallium nitride light-emitting diode device, which sequentially forms a first n-type amorphous compound semiconductor layer, a p/n single crystal or polycrystalline compound semiconductor layer on a sapphire substrate, A single crystal or polycrystalline compound semiconductor impurity-doped layer, a second p-type single crystal or polycrystalline compound semiconductor layer and a first p-type single crystal or polycrystalline compound semiconductor layer.

In this way, the light-emitting diode assembly structure is formed to achieve the effect of high luminous efficiency.

To sum up, through the structure of the amorphous AlInGaN light emitting diode device of the present invention, high luminous efficiency can be formed.

Description of drawings:

Figures 1 and 2 are schematic diagrams of conventional amorphous AlInGaN light-emitting diode devices;

Fig. 3 is a structural diagram of the first implementation assembly of the utility model;

Fig. 4 is a structural diagram of the second implementation assembly of the utility model.

Detailed ways

In order to accomplish the above-mentioned purpose and structure, the technical means adopted by the utility model and its effects, the structure and functions of the utility model are described in detail below in conjunction with the accompanying drawings, so as to fully understand.

Please refer to FIG. 3 , which is a structural view of the first embodiment of the amorphous AlInGaN light emitting diode device of the present invention. On a p-type gallium nitride substrate 100, a first p-type amorphous compound semiconductor layer 102 and a second p-type single crystal or polycrystalline compound semiconductor layer 103 are sequentially grown by means of vapor phase growth or the like. , a single crystal or polycrystalline compound semiconductor impurity-doped layer 105 , a p/n single crystal or polycrystalline compound semiconductor layer 107 and an n-type single crystal or polycrystalline compound semiconductor layer 109 .

Wherein the first p-type amorphous compound semiconductor layer 102 is used as a buffer layer; the second p-type single crystal or polycrystalline compound semiconductor layer 103 is used as the lower side cladding layer, and the single crystal or polycrystalline compound semiconductor impurity doped layer 105 is used as The light emitting layer; the p/n single crystal or polycrystalline compound semiconductor layer 107 serves as an upper cover layer; the n-type single crystal or polycrystalline compound semiconductor layer 109 serves as an electrode and provides a p/n junction.

The p-type impurities mentioned above can be zinc, magnesium, beryllium, strontium and/or cadmium. The n-type impurities can be silicon, germanium, tin, sulfur, tellurium and/or selenium. And after the impurity is added, heating at a temperature of 600-1200° C. for 1-50 minutes, annealing or electron-beam shooting can be performed.

In addition, the vapor phase growth gas includes ammonia, hydrazine, or ammonia-hydrazine combined with trimethyl aluminum, and trimethyl gallium and/or trimethyl gallium are added. Ethyl gallium (triethylgallium). Or the vapor phase growth gas contains diethyl-zinc, trimethyl-zinc, trimethyl-indium, cyclopentadienyl magnesium (cyclopentadienyl- Magnesium).

Please refer to FIG. 4 , which is a structural diagram of a second embodiment of the amorphous AlInGaN light emitting diode device of the present invention. On a sapphire substrate 200, a first n-type amorphous compound semiconductor layer 202, a p/n single crystal or polycrystalline compound semiconductor layer 203, a single crystal or polycrystalline compound semiconductor impurity-doped layer 205 , a second p-type single crystal or polycrystalline compound semiconductor layer 207 and a first p-type single crystal or polycrystalline compound semiconductor layer 209 .

Wherein, the n-type amorphous compound semiconductor layer 202 is used as a buffer layer; the p/n single crystal or polycrystalline compound semiconductor layer 203 is used as a lower cover layer; the single crystal or polycrystalline compound semiconductor impurity doped layer 205 is used as a light emitting layer ; The second p-type single crystal or polycrystalline compound semiconductor layer 207 serves as an upper cover layer; the first p-type single crystal or polycrystalline compound semiconductor layer 209 serves as an electrode layer and provides a p/n junction.

The above-mentioned D-type impurities may be zinc, magnesium, beryllium, strontium and/or cadmium. The n-type impurities can be silicon, germanium, tin, sulfur, tellurium and/or selenium. And after the impurity is added, heating at a temperature of 600-1200° C. for 1-50 minutes, annealing or electron-beam shooting can be performed.

Another vapor phase growth gas comprises ammonia (ammonia), hydrazine (hydrazine) or ammonia-hydrazine (ammonia-hydrazine) combined with trimethyl aluminum (trimethyl aluminum), and added trimethyl gallium (trimethyl galliuln) and/or three Ethyl gallium (triethyl gallium). Or the vapor phase growth gas contains diethyl-zinc, trimethyl-zinc, trimethyl-indium, cyclopentadienyl magnesium (cyclopentadienyl- Magnesium).

The above is only one of the best specific embodiments of the present utility model, but the structural features of the present utility model are not limited thereto, any person familiar with this technology can easily think of it in the field of the present utility model All changes or modifications can be covered within the protection scope of the claims of the present utility model.

Claims (2)

1. an amorphous aluminum indium nitride gallium light-emitting diode assembly is characterized in that: form one the one p type amorphous compound semiconductor layer, one the 2nd p type monocrystalline or polycrystalline series compound semiconductor layer, a monocrystalline or polycrystalline series compound semiconductor impurity doped layer, a p/n monocrystalline or polycrystalline series compound semiconductor layer and a n type monocrystalline or polycrystalline series compound semiconductor layer in regular turn on a p type nitrogenize mirror substrate.

2. an amorphous aluminum indium nitride gallium light-emitting diode assembly is characterized in that: form one the one n type amorphous compound semiconductor layer, a p/n monocrystalline or polycrystalline series compound semiconductor layer, a monocrystalline or polycrystalline series compound semiconductor impurity doped layer, one the 2nd p type monocrystalline or polycrystalline series compound semiconductor layer and one the one p type monocrystalline or polycrystalline series compound semiconductor layer in regular turn on a sapphire substrate.

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