CN222599906U - Coaxial single-fiber bidirectional optical transceiver - Google Patents
Coaxial single-fiber bidirectional optical transceiver Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 103
- 239000000835 fiber Substances 0.000 title claims abstract description 27
- 230000002457 bidirectional effect Effects 0.000 title claims abstract description 18
- 239000013307 optical fiber Substances 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000011144 upstream manufacturing Methods 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 9
- 230000001902 propagating effect Effects 0.000 claims description 8
- 239000012792 core layer Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
本实用新型公开一种同轴的单纤双向光收发器件，包括光纤、光源芯片、滤波片、光探测器，所述光纤、光源芯片、滤波片和光探测器在同一光轴上，从右向左或从左到右依次排布。本实用新型摒弃了传统BOSA中的45°滤光片，将光探测器直接置于包含有波分复用功能的光源芯片的后方，采用同轴布局的方式，可以进一步缩小单纤双向光收发器件的尺寸，实现单纤双向光收发组件的小型化及低成本封装。
The utility model discloses a coaxial single-fiber bidirectional optical transceiver device, comprising an optical fiber, a light source chip, a filter, and a light detector, wherein the optical fiber, the light source chip, the filter, and the light detector are arranged in sequence from right to left or from left to right on the same optical axis. The utility model abandons the 45° filter in the traditional BOSA, and directly places the light detector behind the light source chip including the wavelength division multiplexing function, and adopts a coaxial layout, which can further reduce the size of the single-fiber bidirectional optical transceiver device, and realize the miniaturization and low-cost packaging of the single-fiber bidirectional optical transceiver component.
Description
Technical Field
The utility model relates to the technical field of optical fibers, in particular to a coaxial single-fiber bidirectional optical transceiver.
Background
In recent years, the advent of video live broadcast, online net lessons, virtual reality, cloud games and other various novel applications has put higher demands on bandwidth, time delay, jitter, stability and the like of the existing network, and is pushing the optical fiber network to be continuously close to the user side. From Fiber To The Home (FTTH), to Fiber To The Room (FTTR), the fiber access network and the optical device products behind it are also facing greater cost reduction and miniaturization pressures on the user side while becoming increasingly deeper into the daily lives of average people.
A single-fiber Bi-directional Optical Sub-Assembly (BOSA) is a core device of an optical fiber access network, is a photoelectric conversion device integrating receiving and transmitting, and can realize bidirectional transmission of data on a single optical fiber. Conventional BOSA generally includes an optical fiber, a laser, a photodetector, a filter, a lens, and related fixing members, and the layout is as shown in fig. 1, where a 45 ° filter is disposed between the laser and the optical fiber, the uplink light λ 1 emitted from the laser passes through the 45 ° filter and enters the optical fiber, and the downlink light λ 2 from the optical fiber is deflected by 90 ° by the 45 ° filter and then is directed to the photodetector located above.
The key of the BOSA for realizing bidirectional receiving and transmitting is a 45-degree filter plate arranged at the front end of the laser. Under the condition that the propagation direction of the uplink light lambda 1 is not changed, the propagation direction of the downlink light lambda 2 is changed, so that the light receiving and transmitting paths are separated, and the light receiving and transmitting paths and the light receiving paths can be independently processed. However, the presence of the filter increases the fiber-to-laser and fiber-to-photodetector distances, and the orthogonal dual-path layout also requires that the lateral width of the BOSA must be expanded to accommodate the relevant components, which can result in an overall device size that is large, and thus, improvements are needed.
Disclosure of utility model
The utility model aims to provide a coaxial single-fiber bidirectional optical transceiver which abandons a 45-degree optical filter in the traditional BOSA, and the optical detector is directly arranged at the rear of a light source chip with a wavelength division multiplexing function, so that the size of the single-fiber bidirectional optical transceiver can be further reduced by adopting a coaxial layout mode, and the miniaturization and low-cost packaging of a single-fiber bidirectional optical transceiver component are realized.
In order to achieve the above purpose, the following technical scheme is adopted:
The coaxial single-fiber bidirectional optical transceiver comprises an optical fiber, a light source chip, a filter plate and a light detector, wherein the optical fiber, the light source chip, the filter plate and the light detector are sequentially arranged on the same optical axis from right to left or from left to right;
The light source chip comprises a semiconductor laser or an optical waveguide comprising the semiconductor laser, wherein the semiconductor laser is used for generating uplink light lambda 1, the uplink light lambda 1 is emitted from one end of the light source chip and fed into an optical fiber to enter an external optical communication network, the optical fiber is used for outputting downlink light lambda 2, and the downlink light lambda 2 enters the light source chip from one end of the light source chip and exits from the other end of the light source chip, and enters the optical detector through a filter plate to complete photoelectric conversion;
The filter is a band-stop filter for the upstream light lambda 1 and a band-pass filter for the downstream light lambda 2.
Further, the wavelength of the uplink light lambda 1 is between 1260nm and 1360nm, the wavelength of the downlink light lambda 2 is between 1480nm and 1580nm, and the included angle between the normal direction of the surface of the filter and the optical axis is smaller than 15 degrees.
Further, one end of the light source chip, which is close to the filter, is plated with a first dielectric film, the first dielectric film is an antireflection film for the downlink light lambda 2 and an antireflection film for the uplink light lambda 1, and one end of the light source chip, which is close to the optical fiber, is plated with a second dielectric film, and the second dielectric film is an antireflection film for both the uplink light lambda 1 and the downlink light lambda 2.
Further, the semiconductor laser is provided with a distributed Bragg grating structure.
Further, the light source chip comprises a first section of optical waveguide containing a distributed Bragg grating structure, the wavelength interval between the Bragg center wavelength lambda B corresponding to the Bragg grating structure on the first section of optical waveguide and the wavelength interval between the Bragg center wavelength lambda 1 of the uplink light lambda 1 is smaller than 3nm, and the downlink light lambda 2 passes through the first section of optical waveguide when propagating in the light source chip.
Further, the light source chip comprises a second section of optical waveguide, the second section of optical waveguide comprises a distributed Bragg grating structure, the Bragg center wavelength lambda B corresponding to the Bragg grating structure of the second section of optical waveguide is less than 3nm apart from the wavelength of the uplink light lambda 1, the downlink light lambda 2 needs to pass through the second section of optical waveguide when propagating on the light source chip, the second section of optical waveguide comprises an intrinsic active core layer, and the intrinsic active core layer is a gain medium of the uplink light lambda 1 under the condition of current injection.
Further, the light source chip also comprises an on-chip light detector, and the on-chip light detector is used for monitoring the working state of the semiconductor laser on the light source chip.
Further, the on-chip photodetector uses the same active layer epitaxial material as the semiconductor laser.
Further, the on-chip photodetector is a waveguide type photodetector, and the downstream light λ 2 needs to pass through the main waveguide of the on-chip photodetector when propagating on the light source chip.
Further, the light source chip comprises a wavelength division multiplexing element, the wavelength division multiplexing element comprises a port a, a port b and a port c, the uplink light lambda 1 enters the wavelength division multiplexing element through the port a and is output from the port b to the direction of the optical fiber, and the downlink light lambda 2 enters the wavelength division multiplexing element through the port b and is output from the port c to the direction of the filter after being coupled into the light source chip.
By adopting the scheme, the utility model has the beneficial effects that:
1) The utility model requires that the downlink light is input from one end of the light source chip and then output from the other end surface opposite to the light source chip, and then the light detector usually arranged at one side of the light source chip can be moved to the rear of the light source chip, so that the utility model can coaxially arrange main body elements such as the light source chip, the filter sheet, the light detector and the like, keep the transceiving light paths consistent, and realize smaller radial dimension.
2) The optical paths of the uplink light and the downlink light between the light source chip and the optical fiber are overlapped, and the coupling elements such as lenses can be shared, so that conditions are created for single package (such as single TO package) of the light source chip, the filter and the optical detector, and smaller device size is facilitated.
3) The utility model eliminates the 45-degree filter of the conventional BOSA, eliminates the occupied space, shortens the distance between the optical fiber and the light source chip, and allows the end face of the optical fiber to be closer to the light emitting face of the light source chip, which is beneficial to realizing more effective optical coupling.
Drawings
Fig. 1 is a schematic structural diagram of a conventional single-fiber bi-directional transceiver;
FIG. 2 is a schematic diagram of the structure of the present utility model;
FIG. 3 is a schematic view of a first embodiment of the present utility model;
FIG. 4 is a schematic diagram of a second embodiment of the present utility model;
FIG. 5 is a schematic view of a further improved structure of the present utility model based on the second embodiment;
FIG. 6 is a schematic structural view of a third embodiment of the present utility model;
FIG. 7 is a schematic diagram of a film reflection spectrum according to a first embodiment of the present utility model;
Wherein, the attached drawings mark and illustrate:
1-photodetector, 2-filter, 3-light source chip, 4-optical fiber, 201-optical waveguide, 301-laser main body, 302-first section optical waveguide, 303-on-chip optical waveguide, 401-on-chip photodetector, 501-semiconductor laser and 502-wavelength division multiplexing element.
Detailed Description
The utility model will be described in detail below with reference to the drawings and the specific embodiments.
Referring to fig. 2 to 7, the present utility model provides a coaxial single-fiber bidirectional optical transceiver, in a first embodiment, the coaxial single-fiber bidirectional optical transceiver includes an optical fiber 4, a light source chip 3, a filter 2, and a light detector 1, where the optical fiber 4, the light source chip 3, the filter 2, and the light detector 1 are arranged on the same optical axis in sequence from right to left or from left to right;
The light source chip 3 comprises a semiconductor laser or an optical waveguide 201 containing the semiconductor laser (the semiconductor laser is a part of a continuous optical waveguide 201), wherein the semiconductor laser is used for generating uplink light lambda 1, the uplink light lambda 1 is emitted from one end of the light source chip 3 and fed into an optical fiber 4 to enter an external optical communication network, the optical fiber 4 is used for outputting downlink light lambda 2, and downlink light lambda 2 enters the light source chip 3 from one end of the light source chip 3 and exits from the other end of the light source chip 3, and enters the optical detector 1 through a filter 2 to complete photoelectric conversion;
The filter 2 is a band-stop filter 2 for the upstream light λ 1 and a band-pass filter for the downstream light λ 2.
Continuing to refer to fig. 2, the arrangement that the optical fiber 4, the light source chip 3, the filter 2 and the optical detector 1 are sequentially arranged on the same optical axis from right to left is further described, in this embodiment, the semiconductor laser of the light source chip 3 generates uplink light λ 1, the uplink light λ 1 exits from the right end face of the light source chip 3, is coupled into the optical fiber 4 and propagates along with the optical fiber 4, part of the uplink light λ 1 also exits from the left end face of the light source chip 3, and is blocked by the filter 2 so as not to enter the optical detector 1 to form interference, and the downlink light λ 2 from the optical fiber 4 exits from the optical fiber 4, is coupled into the light source chip 3, exits from the left end face of the light source chip 3 after propagating along the optical waveguide 201 on the light source chip 3, and then enters the optical detector 1 after passing through the optical filter so as to complete photoelectric conversion. Meanwhile, the uplink light λ 1 and the downlink light λ 2 share the optical path between the light source chip 3 and the optical fiber 4, which may include a lens or the like for improving the optical coupling efficiency, and at the same time, the optical path between the light source chip 3 and the light detector 1 may also include a lens or the like for improving the optical responsivity of the light detector 1 to the downlink light λ 2.
Meanwhile, the normal direction of the optical filter is consistent with the optical axis or a certain small inclination angle (the included angle between the normal direction of the surface of the filter 2 and the optical axis is smaller than 15 ℃) is kept to weaken the reflected light of the uplink light lambda 1 returned according to the original path, the wavelength of the uplink light lambda 1 is generally located between 1260nm and 1360nm, the wavelength of the downlink light lambda 2 is generally located between 1480nm and 1580nm, by adopting the design, the downlink light lambda 2 can be ensured to pass through a gain medium adapting to the uplink light lambda 1 with lower loss, and moderate band separation is also beneficial to realizing a wavelength division multiplexing element with high isolation.
In another embodiment, a first dielectric film is coated on one end of the light source chip 3 near the filter 2, the first dielectric film is an antireflection film for the downlink light λ 2 and an antireflection film for the uplink light λ 1, and a second dielectric film is coated on one end of the light source chip 3 near the optical fiber 4, and the second dielectric film is an antireflection film for both the uplink light λ 1 and the downlink light λ 2.
As shown in fig. 3, in this embodiment, the left side end face of the light source chip 3 is coated with a multi-layer dielectric film (first dielectric film) designed such that it is an antireflection film for the downstream light λ 2 and an antireflection film for the upstream light λ 1, the right side end face of the light source chip 3 is coated with another multi-layer dielectric film (second dielectric film) designed such that it is an antireflection film for both the upstream light λ 1 and the downstream light λ 2, and in a preferred embodiment, the first dielectric film on the left side end face of the light source chip 3 has a reflectance of >50% for the upstream light λ 1 and a transmittance of >95% for the downstream light λ 2.
An example of a film design for this embodiment is shown in fig. 7. This example is directed to XG-PON ONU applications, where the upstream wavelength λ 1 =1270 nm and the downstream wavelength λ 2 =1577 nm, and as can be seen from fig. 7, for the left side end face of the light source chip 3, a five-layer SiO2/Si/SiNx based combined film with a total thickness of 456nm can achieve a reflectivity of more than 70% at λ 1 while ensuring a reflectivity of less than 1% at λ 2, and for the right side end face of the light source chip 3, a three-layer SiO2/Si based combined film with a total thickness of 356nm can achieve an antireflection film with a large bandwidth covering λ 1 and λ 2 with a reflectivity < 1%.
In addition, the light source chip 3 may be a DFB laser, and meanwhile, a distributed bragg grating is fabricated on the laser, the grating is used for matching and generating the uplink light λ 1, and the film coating layer on the left side end face of the light source chip 3 is a reflection enhancing film for the uplink light λ 1, which forms a back reflector of the DFB laser.
In the second embodiment, as shown in fig. 4, the light source chip 3 includes a first segment of optical waveguide 302 including a distributed bragg grating structure, and a wavelength interval between a bragg center wavelength λ B corresponding to the bragg grating structure on the first segment of optical waveguide 302 and an uplink light λ 1 is less than 3nm, and the downlink light λ 2 passes through the first segment of optical waveguide 302 when propagating in the light source chip 3.
In this embodiment, the light source chip 3 including the wavelength division multiplexing function is implemented based on a DBR, which uses the narrowband filtering characteristic of a distributed bragg reflector to achieve the purpose of reflecting the uplink light λ 1 and transmitting the downlink light λ 2, where the DBR is a distributed bragg reflector, that is, an optical waveguide fabricated with a periodic grating structure in the propagation direction of the waveguide, has the characteristic of narrowband reflection, and can be used as a reflector of a laser.
In this embodiment, the first optical waveguide 302 of the light source chip 3 is disposed at an end of the laser body 301 near the filter 2, and is used as a back end mirror (DBR mirror) and the laser body 301 to form a semiconductor laser of the light source chip 3, and after the downlink light λ 2 is coupled into the light source chip 3, the downlink light propagates along the on-chip optical waveguide 303 of the laser body 301, and sequentially passes through the laser body 301 and the first optical waveguide 302 (DBR mirror) to reach an end of the light source chip 3 near the filter 2, that is, a left end face of the light source chip 3.
Meanwhile, the laser main body 301 may include a second section of optical waveguide, where the second section of optical waveguide includes a distributed bragg grating structure, a wavelength interval between a bragg center wavelength λ B of the second section of optical waveguide corresponding to the bragg grating structure and an uplink light λ 1 is less than 3nm, and the downlink light λ 2 needs to pass through the second section of optical waveguide when propagating on the light source chip 3, where the second section of optical waveguide includes an intrinsic active core layer, and the intrinsic active core layer is a gain medium of the uplink light λ 1 under the condition of current injection, and the distributed bragg grating structures of the first section of optical waveguide 302 and the second section of optical waveguide may be continuously distributed.
In addition, the left and right end surfaces of the light source chip 3 are coated with a multilayer dielectric film which is an antireflection film for both the uplink light λ 1 and the downlink light λ 2, which reduces the insertion loss of the downlink light λ 2 and improves the stability of the laser by reducing unnecessary reflected light.
Furthermore, as shown in fig. 5, the light source chip 3 may further comprise an on-chip light detector 401, wherein the on-chip light detector 401 is used for monitoring the operation state of the semiconductor laser on the light source chip 3.
Preferably, the on-chip photodetector 401 is a waveguide-type photodetector, which is located at the end of the first segment of optical waveguide 302 near the filter 2, and a substantial portion of the upstream light λ 1 entering the first segment of optical waveguide 302 is reflected, and a small portion of the transmitted upstream light λ 1 enters the on-chip photodetector 401 and is absorbed by the active layer therein to be converted into a photocurrent, which can be used to characterize the operating state of the on-chip laser, while the downstream light λ 2 can pass through the bulk waveguide of the on-chip photodetector 401 as it propagates over the light source chip 3.
Preferably, the on-chip photodetector 401 uses the same active layer epitaxial material as the semiconductor laser.
In the third embodiment, as shown in fig. 6, the light source chip 3 includes a wavelength division multiplexing element 502, the wavelength division multiplexing element 502 includes a port a, a port b and a port c, the uplink light λ 1 generated by the semiconductor laser 501 enters the wavelength division multiplexing element 502 through the port a and is output from the port b in the direction of the optical fiber 4, and the downlink light λ 2 enters the wavelength division multiplexing element 502 through the port b after being coupled into the light source chip 3 and is output from the port c in the direction of the filter 2.
The left side end face and the right side end face of the light source chip 3 are plated with a plurality of dielectric films, the dielectric films are antireflection films for uplink light lambda 1 and downlink light lambda 2, and meanwhile, the three-port Wavelength Division Multiplexing (WDM) element can be realized in various modes such as a directional coupler, a multimode interference coupler, a Mach-Zehnder interferometer, an array waveguide grating and the like.
The foregoing description of the preferred embodiment of the utility model is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the utility model.
Claims (10)
1. The coaxial single-fiber bidirectional optical transceiver comprises an optical fiber, a light source chip, a filter plate and an optical detector, and is characterized in that the optical fiber, the light source chip, the filter plate and the optical detector are sequentially arranged on the same optical axis from right to left or from left to right;
The light source chip comprises a semiconductor laser or an optical waveguide comprising the semiconductor laser, wherein the semiconductor laser is used for generating uplink light lambda 1, the uplink light lambda 1 is emitted from one end of the light source chip and fed into an optical fiber to enter an external optical communication network, the optical fiber is used for outputting downlink light lambda 2, and the downlink light lambda 2 enters the light source chip from one end of the light source chip and exits from the other end of the light source chip, and enters the optical detector through a filter plate to complete photoelectric conversion;
The filter is a band-stop filter for the upstream light lambda 1 and a band-pass filter for the downstream light lambda 2.
2. The coaxial single-fiber bidirectional optical transceiver of claim 1, wherein the wavelength of the uplink light lambda 1 is between 1260nm and 1360nm, the wavelength of the downlink light lambda 2 is between 1480nm and 1580nm, and the angle between the normal direction of the surface of the filter and the optical axis is smaller than 15 °.
3. The coaxial single-fiber bidirectional optical transceiver of claim 1, wherein a first dielectric film is plated at one end of the light source chip near the filter, the first dielectric film is an antireflection film for downstream light lambda 2 and an antireflection film for upstream light lambda 1, a second dielectric film is plated at one end of the light source chip near the optical fiber, and the second dielectric film is an antireflection film for both upstream light lambda 1 and downstream light lambda 2.
4. The coaxial single fiber bi-directional optical transceiver of claim 3, wherein said semiconductor laser has a distributed bragg grating structure fabricated thereon.
5. The coaxial single-fiber bi-directional optical transceiver of claim 1, wherein the optical source chip comprises a first segment of optical waveguide comprising a distributed bragg grating structure, and a bragg center wavelength λ B corresponding to the bragg grating structure on the first segment of optical waveguide is spaced from a wavelength of the uplink light λ 1 by less than 3nm, and the downlink light λ 2 passes through the first segment of optical waveguide when propagating in the optical source chip.
6. The coaxial single-fiber bi-directional optical transceiver of claim 5, wherein the optical source chip comprises a second optical waveguide segment, the second optical waveguide segment comprises a distributed bragg grating structure, a bragg center wavelength lambda B corresponding to the bragg grating structure of the second optical waveguide segment is less than 3nm apart from a wavelength of the uplink light lambda 1, the downlink light lambda 2 needs to pass through the second optical waveguide segment when propagating on the optical source chip, the second optical waveguide segment comprises an intrinsic active core layer, and the intrinsic active core layer is a gain medium of the uplink light lambda 1 under the condition of current injection.
7. The coaxial single fiber bi-directional optical transceiver of claim 1, wherein said light source chip further comprises an on-chip photodetector for monitoring the operating state of the semiconductor laser on the light source chip.
8. The coaxial single fiber bi-directional optical transceiver of claim 7, wherein said on-chip photodetector is of the same active layer epitaxial material as the semiconductor laser.
9. The coaxial single fiber bi-directional optical transceiver of claim 7, wherein said on-chip optical detector is a waveguide type optical detector and downstream light λ 2 is transmitted through the bulk waveguide of said on-chip optical detector as it propagates through the light source chip.
10. The coaxial single-fiber bidirectional optical transceiver of claim 1, wherein the optical source chip comprises a wavelength division multiplexing element, the wavelength division multiplexing element comprises a port a, a port b and a port c, the uplink light lambda 1 enters the wavelength division multiplexing element through the port a and is output from the port b towards the optical fiber, and the downlink light lambda 2 enters the wavelength division multiplexing element through the port b after being coupled into the optical source chip and is output from the port c towards the filter.
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