CN222455316U - A heater for crystal raw materials - Google Patents
A heater for crystal raw materials Download PDFInfo
- Publication number
- CN222455316U CN222455316U CN202420865984.9U CN202420865984U CN222455316U CN 222455316 U CN222455316 U CN 222455316U CN 202420865984 U CN202420865984 U CN 202420865984U CN 222455316 U CN222455316 U CN 222455316U
- Authority
- CN
- China
- Prior art keywords
- heat
- heat insulation
- raw materials
- heater
- inner ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a heater for crystal raw materials, and belongs to the technical field of crystal raw material heating devices. The utility model relates to a heater for crystal raw materials, which comprises a crucible body, an inner cavity, heating wires, a heat insulation inner ring, a heat insulation outer ring and a crystal growth facilitating device, wherein a crucible cavity for hot melt raw materials is arranged in the crucible body, the inner cavity is arranged in the crucible body, the heating wires are arranged in the inner cavity, the heat insulation inner ring is connected in the inner cavity, the heat insulation outer ring is sleeved on the heat insulation inner ring, ventilation air holes are formed in the heat insulation outer ring and the heat insulation inner ring, and the air holes in the heat insulation inner ring and the heat insulation outer ring are uniformly arranged at equal intervals.
Description
Technical Field
The utility model relates to the technical field of crystal raw material heating devices, in particular to a crystal raw material heater.
Background
The artificial crystal material has excellent physical and chemical properties because of being capable of realizing conversion and interaction among different forms of energy such as electricity, light, sound, heat, magnetism, force and the like, and is widely applied to the fields of communication, medical treatment, aerospace, safety monitoring, nuclide detection and the like. There are many methods for producing artificial crystals, such as pulling, dropping, vapor deposition, etc. The crystal growth by the pulling method and the descending method is formed by heating and melting raw materials and crystallizing the raw materials in a proper temperature field, and the crystal growth by the vapor deposition is formed by condensing the raw materials in a proper temperature field and an airflow field after heating the raw materials to sublimation points.
The temperature fields required for different crystals are also different, and a large temperature gradient is generally beneficial to crystal growth, so that the crystal growth speed can be improved, but large stress can be generated in the crystals, and the crystals are cracked. In addition, the thermal field also affects the shape of the solid-liquid interface of crystal growth, and under normal conditions, it is desirable to obtain a flat interface (or micro-convex) to improve the crystal quality and suppress crystal defects. In short, according to different crystal types, different temperature fields need to be designed and constructed to meet the requirement of growing high-quality crystals. At present, the temperature field of common crystal growth equipment is limited by the equipment structure, the temperature field is difficult to adjust, and the growth of different crystals is severely limited.
Therefore, a new heater is highly needed in the field of crystal growth to meet the requirements of a temperature-field-adjustable crystal growth apparatus.
Accordingly, a heater for a crystal raw material is provided to solve the above-mentioned problems.
Disclosure of utility model
The present utility model is directed to a heater for a crystal material, which solves the problems set forth in the background art.
In order to achieve the above purpose, the present utility model adopts the following technical scheme:
The heater of crystal raw materials, including the crucible body, be provided with the crucible chamber for the hot melt raw materials in the crucible body, still include:
an inner cavity disposed within the crucible body;
The heating wire is arranged in the inner cavity;
the heat insulation inner ring is connected in the inner cavity;
The heat insulation outer ring is sleeved on the heat insulation inner ring, air holes for ventilation are formed in the heat insulation outer ring and the heat insulation inner ring, and the air holes in the heat insulation inner ring and the heat insulation outer ring are arranged at equal intervals.
For increased stability, preferably the bottom of the inner chamber is provided with a placement groove for placing the inner and outer heat insulating rings.
In order to facilitate pouring out the melted crystal, preferably, the crucible body is provided with external threads, and the external threads are connected with a tank opening in a threaded manner.
In order to facilitate pouring, a liquid guide groove is preferably arranged on the tank opening.
In order to facilitate the melting of the crystal, preferably, an inner layer of the crucible body close to the crucible cavity is a heat dissipation layer for rapidly conducting the heat of the heating wire to the crucible cavity.
For holding the crucible body, it is preferable that the outside of the crucible body is a heat insulating layer.
Compared with the prior art, the utility model provides a heater for crystal raw materials, which has the following beneficial effects:
according to the utility model, through the arrangement of the heat insulation inner ring and the heat insulation outer ring, the rate of heat conduction to the crucible cavity can be regulated, so that the heating rate of the crucible cavity is regulated, different temperature fields are formed, and the different temperature fields are regulated according to different crystal raw materials, so that the growth of crystals is facilitated.
Drawings
FIG. 1 is a schematic diagram of a heater for a crystal material according to the present utility model;
FIG. 2 is a schematic diagram of a heater for crystal material according to the present utility model;
FIG. 3 is a schematic diagram of a heater for crystal material according to the present utility model;
FIG. 4 is a schematic diagram showing a heater for crystal material according to the present utility model;
fig. 5 is a schematic diagram showing a heater structure for crystal raw materials according to the present utility model.
In the figure, 1, a crucible body, 101, an inner cavity, 102, a placing groove, 103, a heat dissipation layer, 104, a heat insulation layer, 2, a tank opening, 3, a heating wire, 4, a heat insulation outer ring and 5, a heat insulation inner ring.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments.
Example 1:
Referring to fig. 1-5, a heater for crystal raw materials comprises a crucible body 1, wherein a crucible cavity for hot melt raw materials is arranged in the crucible body 1, an inner cavity 101 is arranged in the crucible body 1, a heating wire 3 is arranged in the inner cavity 101, a heat insulation inner ring 5 is connected in the inner cavity 101, a heat insulation outer ring 4 is sleeved on the heat insulation inner ring 5, ventilation air holes are formed in the heat insulation outer ring 4 and the heat insulation inner ring 5, the air holes in the heat insulation inner ring 5 and the heat insulation outer ring 4 are uniformly arranged at equal intervals, external threads are arranged on the crucible body 1, a heat dissipation layer 103 is arranged at the inner layer, close to the crucible cavity, of the crucible body 1, and used for rapidly conducting heat of the heating wire 3 to the crucible cavity, and a heat insulation layer 104 is arranged outside the crucible body 1.
The internal structure of the device is shown in fig. 3 and 4, and is sequentially provided with a heat insulation layer 104, a heating wire 3, a heat insulation outer ring 4, a heat insulation inner ring 5 and a heat dissipation layer 103 from outside to inside, wherein the heat insulation inner ring 5 and the heat insulation outer ring 4 are made of materials with certain heat insulation capacity, the materials with particularly good heat insulation capacity are not needed, heat is prevented from being conducted smoothly, the positions of air openings on the heat insulation inner ring 5 and the heat insulation outer ring 4 are consistent, and certain intervals are kept between every two air openings.
When in actual use, if the crystal raw material to be heated needs to be heated, the heat insulation inner ring 5 and the heat insulation outer ring 4 are taken out from the inner cavity 101 at the moment, and the heat generated by the heating wire 3 is directly contacted with the heat dissipation layer 103, so that the crystal raw material is heated and melted, namely a temperature field for quickly heating;
If slow temperature rise is needed, the states of the heat insulation inner ring 5 and the heat insulation outer ring 4 are shown in fig. 3, and heat is in contact with the heat dissipation layer 103 through the air hole, so that the heat is not in contact with the heat dissipation layer 103 so fast, and a slower temperature rise, namely a slower temperature rise temperature field is realized;
Meanwhile, the heat-insulating inner ring 5 and the heat-insulating outer ring 4 are rotated and adjusted, so that the heat quantity of circulation of an air hole is adjusted, the smallest state is shown in fig. 5, the air hole directly passes through the heat quantity, and only the heat quantity can be waited for to heat the heat-insulating inner ring 5 and the heat-insulating outer ring 4, so that the heat quantity is slowly conducted out, and the heat dissipation layer 103 is slowly heated, namely, a temperature field with slow temperature rise is realized;
Different crystal materials are realized by the method, and different temperature fields are adopted.
Example 2:
Referring to FIGS. 1-5, a heater for crystal raw material is basically the same as that of embodiment 1, further, a placement groove 102 is provided at the bottom of the inner cavity 101, the placement groove 102 is used for placing the heat insulation inner ring 5 and the heat insulation outer ring 4, a tank opening 2 is connected to an external thread by screw thread, and a liquid guiding groove is provided on the tank opening 2.
Through setting up of standing groove 102, be convenient for improve the stability of thermal-insulated inner ring 5, thermal-insulated outer loop 4, be convenient for simultaneously thermal-insulated inner ring 5, thermal-insulated outer loop 4 rotate, adjust suitable air gap size.
The liquid guide groove is convenient for pouring out the melted crystal raw material.
According to the utility model, through the arrangement of the heat insulation inner ring 5 and the heat insulation outer ring 4, the rate of heat conduction to the crucible cavity can be regulated, so that the heating rate of the crucible cavity is regulated, different temperature fields are formed, and the different temperature fields are regulated according to different crystal raw materials, so that the growth of crystals is facilitated.
The foregoing is only a preferred embodiment of the present utility model, but the scope of the present utility model is not limited thereto, and any person skilled in the art, who is within the scope of the present utility model, should make equivalent substitutions or modifications according to the technical scheme of the present utility model and the inventive concept thereof, and should be covered by the scope of the present utility model.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202420865984.9U CN222455316U (en) | 2024-04-24 | 2024-04-24 | A heater for crystal raw materials |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202420865984.9U CN222455316U (en) | 2024-04-24 | 2024-04-24 | A heater for crystal raw materials |
Publications (1)
Publication Number | Publication Date |
---|---|
CN222455316U true CN222455316U (en) | 2025-02-11 |
Family
ID=94458485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202420865984.9U Active CN222455316U (en) | 2024-04-24 | 2024-04-24 | A heater for crystal raw materials |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN222455316U (en) |
-
2024
- 2024-04-24 CN CN202420865984.9U patent/CN222455316U/en active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105483825B (en) | A kind of bromine lead caesium method for preparing single crystal | |
CN101311332B (en) | Crystallization zone temperature gradient regulator and crucible drop method single crystal growth device | |
CN108277534A (en) | A kind of graphite resistance heating SiC crystal growth furnace | |
TW202018133A (en) | A reflective screen of a monocrystal growth furnace and the monocrystal growth furnace | |
CN105951169B (en) | A kind of big gradient visualization tubular type monocrystal growing furnace | |
CN104532353B (en) | Chromium-doped zinc selenide monocrystal Bridgman growth device and method | |
CN222455316U (en) | A heater for crystal raw materials | |
CN119041011A (en) | Liquid phase growth device and method capable of simultaneously growing multiple silicon carbide single crystals | |
TWI726505B (en) | Draft tube of crystal growing furnace and the crystal growing furnace | |
CN206570431U (en) | A kind of device for preparing single-crystal silicon carbide | |
CN102912430A (en) | Sapphire crystal growth equipment and method | |
TWI852339B (en) | Crucible device, single crystal furnace device and working method thereof | |
CN104611764B (en) | A kind of micro- downward lifting crystal growing furnace | |
CN110512281A (en) | Method for rapid preparation of silicon carbide | |
CN215209690U (en) | Single crystal furnace for producing monocrystalline silicon | |
CN106319619B (en) | 6 inches of vertical pulling heavily-doped silicon dislocation-free growth techniques of one kind and its thermal field system | |
CN105220222A (en) | The crystal growing apparatus of multiple hot cell and method | |
TWI732376B (en) | Growth apparatus for continuous czochralski | |
CN212560542U (en) | TCS hot box cap | |
CN204265882U (en) | A kind of crystal growing apparatus | |
CN110499532A (en) | Device for rapid preparation of silicon carbide | |
CN219032461U (en) | Crucible for silicon carbide single crystal growth and silicon carbide single crystal growth system | |
CN215163300U (en) | Heating structure for Czochralski crystal growth and crystal growth device | |
CN213739774U (en) | Double-heating crystal growth device | |
CN202492615U (en) | Ingot furnace with low energy consumption thermal field structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |