CN222147613U - Radio frequency switch and radio frequency switch module - Google Patents

Abstract

The application relates to a radio frequency switch and a radio frequency switch module. The radio frequency switch comprises a switch stack module coupled between a first signal transmission port and a second signal transmission port, wherein the switch stack module comprises a series connection module and a parallel connection module, the series connection module is connected between the first signal transmission port and the second signal transmission port, the parallel connection module is connected between the second signal transmission port and the ground, and one of the series connection module and the parallel connection module is disconnected during the conduction period of the other. The embodiment of the application improves the linearity and the power capacity of the radio frequency switch.

Description

Radio frequency switch and radio frequency switch module

Technical Field

The present application relates to the field of electronic technology, and in particular, to a radio frequency switch and a radio frequency switch module.

Background

Currently, in the process of transmitting radio frequency signals, radio frequency switching devices, such as multiport antenna switches, are commonly used. However, due to the poor switching isolation of these devices, strict linearity requirements are often not met during the transmission of radio frequency signals. And the problem of insufficient power capacity exists, and the transmission requirement of high-power radio frequency signals cannot be met.

Disclosure of utility model

Accordingly, embodiments of the present application provide a radio frequency switch and a radio frequency switch module for solving at least one of the problems in the background art.

In a first aspect, an embodiment of the present application provides a radio frequency switch, including a switch stack module coupled between a first signal transmission port and a second signal transmission port;

The switch stack module comprises a series module and a parallel module, wherein the series module is connected between the first signal transmission port and the second signal transmission port, the parallel module is connected between the second signal transmission port and the ground, and one of the series module and the parallel module is disconnected during the conduction period of the other.

With reference to the first aspect, in an alternative embodiment, the series module and the parallel module each include an opening bonded store.

With reference to the first aspect, in an optional implementation manner, the first signal transmission port includes a first input/output port, and the second signal transmission port includes a first output port;

The radio frequency switch comprises a first switch stack module coupled between the first input and output port and the first output port, wherein the first switch stack module comprises a first series module and a first parallel module;

The first series module is connected between the first input and output ports and the first output port, the first parallel module is connected between the first output port and the ground, and one of the first series module and the first parallel module is disconnected during the conduction period of the other.

With reference to the first aspect, in an optional implementation manner, the second signal transmission port further includes a second output port;

The radio frequency switch further comprises a second switch stack module coupled between the first input and output port and the second output port, wherein the second switch stack module comprises a second series module and a second parallel module;

The second series module is connected between the first input and output port and the second output port, the second parallel module is connected between the second output port and the ground, one of the second series module and the second parallel module is disconnected during the conduction period of the other one, and other switch bonded store modules are disconnected during the conduction period of any one of the first switch stack module and the second switch stack module.

With reference to the first aspect, in an optional implementation manner, the second signal transmission port further includes a first input port;

The radio frequency switch further comprises a third switch stack module coupled between the first input and output port and the first input port, wherein the third switch stack module comprises a third serial module and a third parallel module;

The third series module is connected between the first input and output port and the first input port, the third parallel module is connected between the first input port and the ground, one of the third series module and the third parallel module is disconnected during the conduction period of the other one, and other switch bonded store modules are disconnected during the conduction period of any one of the first switch stack module, the second switch stack module and the third switch stack module.

With reference to the first aspect, in an alternative embodiment, the first series module, the second series module, and the third series module each include at least two switch stacks connected in parallel.

With reference to the first aspect, in an alternative embodiment, the first series module and the second series module are two 16-stage openings bonded store connected in parallel, where a width of a conductive channel of each NMOS transistor in the openings bonded store is 1.5mm;

The third series module is two 8-stage openings bonded store connected in parallel, wherein the width of a conducting channel of each NMOS transistor in the openings bonded store is 1.5mm;

The first parallel module and the second parallel module are respectively a single 12-order switch bonded store, wherein the width of a conducting channel of each NMOS transistor in the switch bonded store is 1mm;

The third parallel module is a single 16-stage switch bonded store, where the width of the conductive channel of each NMOS transistor in switch bonded store is 1mm.

In a second aspect, an embodiment of the present application provides a radio frequency switch module, where the radio frequency switch module includes a positive and negative voltage generating circuit, a logic control circuit, and the radio frequency switch described above;

The positive and negative voltage generating circuit is configured to provide a positive bias voltage and a negative bias voltage;

The logic control circuit is configured to determine and output two sets of bias voltages according to the positive bias voltage and the negative bias voltage under the control of a logic control signal, so that a series module and a parallel module in any switch stack module of the radio frequency switch are respectively disconnected during the next conduction period of the two sets of bias voltages under the control of the two sets of bias voltages.

With reference to the second aspect, in an alternative embodiment, the two sets of bias voltages include a first set of bias voltages and a second set of bias voltages;

The first group of bias voltages comprises a series gate bias voltage and a series body bias voltage, wherein the series gate bias voltage is used for being provided for the gates of the NMOS transistors in the series modules, and the series body bias voltage is used for being provided for the substrates of the NMOS transistors in the series modules so as to control the series modules to be connected or disconnected;

The second set of bias voltages includes a parallel gate bias voltage for providing to gates of NMOS transistors in the parallel block and a parallel body bias voltage for providing to a substrate of NMOS transistors in the parallel block to control the parallel block to turn on or off.

With reference to the second aspect, in an optional embodiment, the first set of bias voltages includes a first set of bias voltages, a second set of bias voltages, and a third set of bias voltages;

The second set of bias voltages includes a first second set of bias voltages, a second set of bias voltages, and a third second set of bias voltages;

The first bias voltage group is used for being provided for a first parallel module in a first switch stack module of the radio frequency switch so as to control the first parallel module to be switched on or switched off;

The second group of bias voltages are used for being provided for a second parallel module in a second switch stack module of the radio frequency switch so as to control the second parallel module to be switched on or off;

the third group of bias voltages are used for being provided for a third serial module in a third switch stack module of the radio frequency switch to control the third serial module to be turned on or off, and the third group of bias voltages are used for being provided for a third parallel module in the third switch stack module of the radio frequency switch to control the third parallel module to be turned on or off.

The technical scheme provided by the embodiment of the application has the beneficial effects that the radio frequency switch comprises the switch stack module, and the switch stack module comprises the series module and the parallel module, so that the switch isolation of the radio frequency switch can be improved, and the strict linearity requirement can be achieved. And the power capacity of the radio frequency switch can be improved through the switch stack module so as to meet the transmission requirement of high-power radio frequency signals.

Additional aspects and advantages of embodiments of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of embodiments of the application.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort. The drawings and the written description are not intended to limit the scope of the inventive concepts in any way, but rather to illustrate the inventive concepts to those skilled in the art by reference to the specific embodiments. In the drawings:

FIG. 1 is a circuit diagram of a specific example of a switch bonded store in an embodiment of the present application;

FIG. 2 is a schematic block diagram of one specific example of a radio frequency switch in an embodiment of the application;

FIG. 3 is a circuit diagram of one specific example of a radio frequency switch in an embodiment of the present application;

FIG. 4 is a schematic block diagram of a specific example of a RF switch module in an embodiment of the application;

fig. 5 is a schematic block diagram of another specific example of a radio frequency switch module in an embodiment of the present application.

Detailed Description

In order to make the technical scheme and beneficial effects of the embodiments of the present application more obvious and understandable, the following detailed description is given by way of example only. Wherein the drawings are not necessarily to scale, and wherein the local features may be exaggerated or reduced to more clearly illustrate the details of the local features, unless otherwise defined, the technical and scientific terms used herein have the same meaning as those in the technical field of embodiments of the present application.

It should be noted that the terms "first," "second," and the like may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another element. When "first" is described, it does not necessarily mean that "second" is present, nor when "second" is discussed, it does not necessarily mean that "first" is present. The singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The term "comprising" is used to determine the presence of an included feature, but does not exclude the presence or addition of one or more other features. The term "and/or" includes any and all combinations of the associated listed items. The term "plurality" means two or more.

In the embodiment of the present application, as shown in fig. 1, the switch stack 01 may be mainly formed by connecting a plurality of switch units 011 in series, that is, a transistor stacking method. By connecting a plurality of switch units 011 in series to form the switch bonded store, a large voltage swing to be carried can be distributed to each of the stacked switch units 011, and thus the power capacity and linearity can be significantly improved.

As a specific example, the switching unit 011 may include an NMOS transistor (N-type metal oxide semiconductor field effect transistor), a gate bias resistor Rg, a body bias resistor Rb, and a drain-source linearization resistor Rds. The gate G of the NMOS transistor may be connected to a first terminal of a gate bias resistor Rg, the substrate B of the NMOS transistor may be connected to a first terminal of a body bias resistor Rb, the source S and the drain D of the NMOS transistor may be connected to each other through a drain-source linearization resistor Rds, a second terminal of the gate bias resistor Rg may be configured to input a gate bias voltage, and a second terminal of the body bias resistor Rb may be configured to input a body bias voltage. The source S of the NMOS transistor may be connected to the drain of the NMOS transistor of the upper stage switching unit or configured to input a radio frequency signal, and the drain D of the NMOS transistor may be connected to the source of the NMOS transistor of the lower stage switching unit or configured to output a radio frequency signal. For example, the NMOS transistor may be the first NMOS transistor M1, the second NMOS transistor M2, the third NMOS transistor M3, the fourth NMOS transistor M4, or the like illustrated in fig. 1. The number of switching units 011 connected in series in the switch bonded store 01 may be regarded as the order of the switch bonded store 01, for example, if 16 NMOS transistors are connected in series in the switch bonded store 01, this may be referred to as 16-order switch bonded store.

In the embodiment of the present application, an NMOS transistor is used as a switching transistor in the switching unit 011, and it should be understood by those skilled in the art that the switching transistor in the switching unit 011 may also be another controllable semiconductor switching device, for example, may include at least one of a MOSFET (metal oxide semiconductor field effect transistor, abbreviated as MOS transistor) and an IGBT (insulated gate bipolar transistor).

According to the embodiment of the application, the grid bias resistor Rg and the body region bias resistor Rb can isolate the radio frequency signal from the direct current signal, prevent the radio frequency signal from leaking to the equivalent alternating current grounding end of the grid, reduce radio frequency loss, and improve the voltage bearing capacity of the switch unit 011, for example, the voltage bearing capacity of the switch unit 011 can be improved by at least one time when the switch unit 011 is turned off, and the drain-gate junction of the NMOS transistor is prevented from being broken down prematurely, so that the power capacity of the switch bonded store 01 can be improved. And through drain-source linearization resistor Rds, the DC potential of the drain and source ends can be stabilized, the drain and source potential of FET can be stabilized at the ground potential in the series-parallel switch structure, and the drain and source are prevented from generating obvious DC voltage drop in the switching process of the switch. The on or off of the NMOS transistor is controlled by the gate bias voltage and the body bias voltage, thereby controlling the on or off of the switch bonded store.

In an alternative embodiment, the switch stack 01 may further include a gate common resistor Rgc and a body common resistor Rbc. A first terminal of the gate common resistor Rgc is configured to input a gate bias voltage, and a second terminal of the gate common resistor Rgc is connected to a second terminal of the gate bias resistor Rg of each of the switching units 011, respectively. A first terminal of the body common resistor Rbc is configured to input a body bias voltage, and a second terminal of the body common resistor Rbc is connected to a second terminal of the body bias resistor Rb of each switching unit 011, respectively. According to the embodiment of the application, the power capacity of the switch bonded store 01 can be further improved through the grid common resistor Rgc and the body region common resistor Rbc.

Therefore, based on the current demands for power capacity and linearity of the radio frequency switch, the embodiment of the application provides a radio frequency switch, which is formed by adopting the switch stack 01. As shown in fig. 2, the radio frequency switch 100 includes a switch stack module 10 coupled to a first signal transmission port A1 and a second signal transmission port A2;

The switching stack module 10 includes a series module 11 and a parallel module 12, the series module 11 being connected between the first signal transmission port A1 and the second signal transmission port A2, the parallel module 12 being connected between the second signal transmission port A2 and the ground, one of the series module 11 and the parallel module 12 being disconnected during the other being on.

In the embodiment of the present application, the switch stack module 10 employs a switch stack 01. For example, at least one of the series module 11 and the parallel module 12 may employ an opening bonded store 01, and a module not employing an opening bonded store 01 may employ a controllable switching device to achieve controlled on or off to achieve controllable transmission of radio frequency signals. The controllable switching device may include at least one of BJT (triode), SCR (silicon controlled rectifier), GTO (gate turn off thyristor), MOSFET (metal oxide semiconductor field effect transistor, abbreviated as MOS transistor), IGBT (insulated gate bipolar transistor), MCT (MOS controlled thyristor), and SIT (electrostatic induction transistor).

The first signal transmission port A1 may include an input/output port ANT of the radio frequency switch 100, and the second signal transmission port A2 may include an input port TX or an output port RX of the radio frequency switch 100. The rf switch 100 may include a plurality of signal transmission ports, where different channels are formed between the signal transmission ports, and the conduction of the switching channel realizes the transmission switching of the rf signal. These signal transmission ports may have one or more input/output ports ANT, one or more input ports TX and/or one or more output ports RX. Through these channels, radio frequency signals can be transmitted between the input port TX and the input/output port ANT or between the input/output port ANT and the output port RX. Each channel may be formed by a switch stack module 10. The serial module 11 and the parallel module 12 of the switch stack module 10 form a switch stack serial-parallel structure. This configuration can significantly increase the isolation of the rf switch with only a small impact on insertion loss. For different channels, the parallel-serial structure of the openings bonded store can be different to meet different requirements of each channel.

One of the series module 11 and the parallel module 12 is turned off during the other is turned on, which may be that the parallel module 12 is turned on when the series module 11 is turned off and the series module 11 is turned on when the parallel module 12 is turned off. The conduction of the serial module 11 enables the transmission of radio frequency signals between the first signal transmission port A1 and the second signal transmission port A2. At this time, the parallel module 12 is disconnected and receives the voltage of the transmitted rf signal, and receives a high voltage if the transmitted rf signal is a high power rf signal. Thus, if the parallel module 12 includes the switch bonded store 01, the power capacity can be increased, and the voltage that can be born can be increased. The disconnection of the serial module 11 disconnects the transmission of the radio frequency signal between the first signal transmission port A1 and the second signal transmission port A2. The disconnected series module 11 is also subjected to the voltage of the transmitted radio frequency signal. Therefore, if the series module 11 includes the switch bonded store 01, the power capacity can be increased, and the sustainable voltage can be increased. At this time, the parallel module 12 is turned on, so that the second signal transmission port A2 may be grounded, thereby significantly increasing the isolation of the radio frequency switch and improving the linearity.

According to the embodiment of the application, the radio frequency switch comprises the switch Guan Zhan module, and the switch stack module comprises the series module and the parallel module, so that the switch isolation of the radio frequency switch can be improved, and strict linearity requirements can be met. And the power capacity of the radio frequency switch can be improved through the switch stack module so as to meet the transmission requirement of high-power radio frequency signals.

In an alternative embodiment, both series module 11 and parallel module 12 include switch bonded store 01.

In the embodiment of the present application, the number of switch stacks 01 in the series module 11 and the parallel module 12 may be set according to actual requirements. The power capacity and the linearity of the series module 11 and the parallel module 12 can be respectively improved by the fact that the series module 11 and the parallel module 12 comprise the switch bonded store, so that the power capacity and the linearity of the radio frequency switch are integrally improved. The greater the number of switching tubes in series in the switch bonded store, i.e., the higher the order, the higher the voltage that it can withstand and the higher the power capacity. So to increase the power capacity, higher order switch stacks may be employed.

In an alternative embodiment, as shown in fig. 3, the first signal transmission port A1 includes a first input/output port ANT1, and the second signal transmission port A2 includes a first output port RX1;

The radio frequency switch 100 comprises a first switch stack module 101 coupled between a first input output port ANT1 and a first output port RX1, wherein the first switch stack module 101 comprises a first series module T1 and a first parallel module S1;

The first serial module T1 is connected between the first input/output port ANT1 and the first output port RX1, the first parallel module S1 is connected between the first output port RX1 and the ground, and one of the first serial module T1 and the first parallel module S1 is turned off during the other is turned on.

In an alternative embodiment, the second signal transmission port A2 further includes a second output port RX2;

The radio frequency switch 100 further comprises a second switch stack module 102 coupled between the first input/output port ANT1 and the second output port RX2, wherein the second switch stack module 102 comprises a second series module T2 and a second parallel module S2;

The second series module T2 is connected between the first input/output port ANT1 and the second output port RX2, the second parallel module S2 is connected between the second output port RX2 and the ground, one of the second series module T2 and the second parallel module S2 is turned off during the turn-on period of the other, and the other switch bonded store modules are turned off during the turn-on period of any one of the first switch stack module 101 and the second switch stack module 102.

In an alternative embodiment, the second signal transmission port A2 further comprises a first input port TX1;

the radio frequency switch 100 further comprises a third switch stack module 103 coupled between the first input/output port ANT1 and the first input port TX1, wherein the third switch stack module 103 comprises a third series module T3 and a third parallel module S3;

The third series module T3 is connected between the first input/output port ANT1 and the first input port TX1, the third parallel module S3 is connected between the first input port TX1 and the ground, one of the third series module T3 and the third parallel module S3 is turned off during the turn-on period of the other, and the other switch bonded store modules are turned off during the turn-on period of any one of the first, second, and third switch stack modules 101, 102, 103.

In the embodiment of the application, the switching stack module can be switched on by the serial module and switched off by the parallel module, and the switching stack module can be switched off by the serial module and switched on by the parallel module.

For example, if the channel between the first input/output port ANT1 and the first input port TX1 is on, the third switch stack module 103 is on, and the first switch stack module 101 and the second switch stack module 102 are off. That is, the third series module T3, the first parallel module S1, and the second parallel module S2 are turned on, and the third parallel module S3, the first series module T1, and the second series module T2 are turned off.

If the channel between the first input/output port ANT1 and the second output port RX2 is on, the second switch stack module 102 is on, and the first switch stack module 101 and the third switch stack module 103 are off. That is, the second parallel module T2, the first parallel module S1, and the third parallel module S3 are turned on, and the second parallel module S2, the first serial module T1, and the third serial module T3 are turned off.

If the channel between the first input/output port ANT1 and the first output port RX1 is on, the first switch stack module 101 is on, and the second switch stack module 102 and the third switch stack module 103 are off. That is, the first, second and third parallel modules T1, S2 and S3 are turned on, and the first, second and third parallel modules S1, T2 and T3 are turned off.

In an alternative embodiment, the first, second and third series modules T1, T2 and T3 each comprise at least two switch stacks connected in parallel.

In the embodiment of the application, the on-resistance can be reduced by increasing the width of the conducting channel in the NMOS transistor so as to reduce the insertion loss. However, too wide a conduction channel of a single NMOS transistor may cause a voltage drop across its gate terminal, which is also undesirable. Therefore, the effect of increasing the total width can be achieved by connecting the plurality of openings bonded store in parallel, the insertion loss can be effectively reduced, and the defect caused by the excessively wide conducting channel of the single NMOS transistor can be overcome.

In the embodiment of the present application, the channel with the input port TX may be a TX channel, and the channel with the output port RX may be an RX channel. The switch stack modules in both the TX and RX channels have the advantage of high power capacity and high linearity, where the TX channel needs to withstand relatively higher power, while the RX channel requires relatively less power, but requires lower insertion loss. For example, when the third serial module T3 of the TX channel passes through the high-power radio frequency signal, the two ends of the first serial module T1, the second serial module T2 and the third parallel module S3 that are turned off will bear high voltage, so the first serial module T1, the second serial module T2 and the third parallel module S3 need to have more orders of opening bonded store relative to other modules. For another example, to reduce the insertion loss, the first serial module T1, the second serial module T2, or the third serial module T3 may be connected in parallel to the switch bonded store. Therefore, the number and the connection manner of the switch stacks in the first serial module T1, the second serial module T2 and the third serial module T3 can be set according to actual requirements. For example, each may include one switch stack or more than two switches bonded store connected in parallel. For example, two or more switches bonded store may be connected in parallel to each of the first, second, and third series modules T1, T2, and T3. In addition, the first parallel module S1, the second parallel module S2, and the third parallel module S3 may each include one switch bonded store or more switch stacks connected in parallel, and may be set according to actual requirements.

To this end, as a specific example, the first and second series modules T1 and T2 are respectively two 16-stage openings bonded store connected in parallel, wherein the width of the conductive channel of each NMOS transistor in the openings bonded store is 1.5mm;

The third series module T3 is two 8-stage openings bonded store connected in parallel, wherein the width of the conductive channel of each NMOS transistor in the openings bonded store is 1.5mm;

The first parallel module S1 and the second parallel module S2 are each a single 12-step switch bonded store, wherein the width of the conductive channel of each NMOS transistor in the switch bonded store is 1mm;

The third parallel module S3 is a single 16-stage switch bonded store, where the width of the conductive channel of each NMOS transistor in the switch bonded store is 1mm.

In the embodiment of the application, the width of the conducting channel of the NMOS transistor, namely the width in the width-to-length ratio. The first serial module T1 and the second serial module T2 are respectively connected in parallel with two 16-step switches Guan Zhan with the width of 1.5mm, so that the total width is 3mm, and the third serial module T3 is connected in parallel with two 8-step switches Guan Zhan with the width of 1.5mm, so that the total width is 3mm, and the insertion loss is reduced. The first serial module T1, the second serial module T2 and the third parallel module S3 are 16-order switches bonded store respectively, so that the high-power-bearing capacity is realized, and when the TX channel needs to transmit high-power radio frequency signals, the safe and stable operation of the radio frequency switch can be ensured.

The embodiment of the application also provides a radio frequency switch module, as shown in fig. 4, which comprises a positive and negative voltage generating circuit 200, a logic control circuit 300 and the radio frequency switch 100;

the positive and negative voltage generating circuit 200 is configured to supply a positive bias voltage and a negative bias voltage;

The logic control circuit 300 is configured to determine and output two sets of bias voltages according to the positive bias voltage and the negative bias voltage under the control of the logic control signal, so that the series module 11 and the parallel module 12 in the switch stack module 10 of the radio frequency switch 100 are respectively turned off during the next turn-on period under the control of the two sets of bias voltages.

In the embodiment of the present application, the positive bias voltage and the negative bias voltage provided by the positive and negative voltage generating circuit 200 may be set according to actual requirements. For example, the positive bias voltage may be 2.5V and the negative bias voltage may be-2.5V. The logic control circuit 300 can be set according to actual requirements. For example, a circuit mainly composed of logic gates may be used to switch between a positive bias voltage and a negative bias voltage under the control of a logic control signal to output different bias voltage combinations. According to the embodiment of the application, the switch bonded store module is controlled to be switched on or off by controlling the bias voltage output by the logic control circuit through the logic control signal, so that the switching of a conducting path of the radio frequency switch can be realized, and the controlled transmission of signals is realized. And the power capacity and the linearity of the radio frequency switch are improved through the switch stack module of the radio frequency switch.

In an alternative embodiment, the two sets of bias voltages include a first set of bias voltages and a second set of bias voltages;

The first set of bias voltages includes a series gate bias voltage Vgth and a series body bias voltage Vbth, the series gate bias voltage Vgth being used to provide the gates of the NMOS transistors in the series block 11 and the series body bias voltage Vbth being used to provide the substrates of the NMOS transistors in the series block 11 to control the series block 11 to turn on or off;

the second set of bias voltages includes a parallel gate bias voltage Vgsh and a parallel body bias voltage Vbsh, the parallel gate bias voltage Vgsh being used to provide the gates of the NMOS transistors in the parallel block 12 and the bulk bias voltage Vbsh being used to provide the substrates of the NMOS transistors in the parallel block 12 to control the parallel block 12 to turn on or off.

In the embodiment of the application, the first set of bias voltages and the second set of bias voltages in the two sets of bias voltages can comprise a gate bias voltage and a body bias voltage. The series gate bias voltage Vgth and the series body bias voltage Vbth of the first set of bias voltages may control the series block 11 to turn on or off, and the parallel gate bias voltage Vgsh and the parallel body bias voltage Vbsh of the second set of bias voltages may control the parallel block 12 to turn on or off, thereby enabling the series block 11 and the parallel block 12 to be turned off during another turn on period under control of the two sets of bias voltages, respectively.

Either or both of the series module 11 and the parallel module 12 may be provided with an opening bonded store or an opening bonded store. For example, a single switching unit may be employed for either one of the two, and the other may employ the switch bonded store. The series gate bias voltage Vgth and the series body bias voltage Vbth may be respectively 2.5V and 0V to control the series module 11 to be turned on, and are respectively-2.5V to control the series module 11 to be turned off. Similarly, the parallel gate bias voltage Vgsh and the parallel body bias voltage Vbsh may be 2.5V and 0V, respectively, to control the parallel module 12 to turn on and to control the parallel module 12 to turn off when both voltages are-2.5V. If the series module 11 or the parallel module 12 includes at least two switches bonded store connected in parallel, controlling the series module 11 or the parallel module 12 to be turned on may control all parallel switch stacks included in the series module 11 or the parallel module 12 to be turned on, and controlling the series module 11 or the parallel module 12 to be turned off may control all parallel switch stacks included in the series module to be turned off.

As a specific example, the first set of bias voltages includes a first set of bias voltages, a second set of bias voltages, and a third set of bias voltages;

The second set of bias voltages includes a first second set of bias voltages, a second set of bias voltages, and a third second set of bias voltages;

the first group of bias voltages are used for being provided to the first serial module T1 in the first switch stack module 101 of the radio frequency switch 100 to control the first serial module T1 to be turned on or off, and the first group of bias voltages are used for being provided to the first parallel module S1 in the first switch stack module 101 of the radio frequency switch 100 to control the first parallel module S1 to be turned on or off;

The second group of bias voltages is used for being provided to the second parallel module S2 in the second switch stack module 102 of the radio frequency switch 100 to control the second parallel module S2 to be turned on or off;

The third group of bias voltages is used for being provided to the third serial module T3 in the third switch stack module 103 of the radio frequency switch 100 to control the third serial module T3 to be turned on or off, and the third group of bias voltages is used for being provided to the third parallel module S3 in the third switch stack module 103 of the radio frequency switch 100 to control the third parallel module S3 to be turned on or off.

In the embodiment of the present application, as shown in fig. 5, the positive and negative voltage generating circuit 200 may generate and output the positive bias voltage Vpos and the negative bias voltage Vneg using the external power supply voltage VDD. The logic control signals may include a first control signal D <0> and a second control signal D <1>. The logic control circuit may switch and output a first set of bias voltages (Vgth <1>, vbth <1 >), a second set of bias voltages (Vgth <2>, vbth <2 >), a third set of bias voltages (Vgth <3>, vbth <3 >), a second set of bias voltages (Vgsh <1>, vbsh <1 >), a second set of bias voltages (Vgsh <2>, vbsh <2 >) and a third set of bias voltages (Vgsh <3>, vbsh <3 >) under the control of the first control signal D <0> and the second control signal D <1>. The voltage levels of the first control signal D <0> and the second control signal D <1> may be +2.5v/0V.

For example, if the channel between the first input/output port ANT1 and the first input port TX1 is turned on, the third first set of bias voltages (Vgth <3>, vbth <3 >), the first second set of bias voltages (Vgsh <1>, vbsh <1 >), and the second set of bias voltages (Vgsh <2>, vbsh <2 >) may be respectively (2.5V, 0V), thereby controlling the third parallel module T3, the first parallel module S1, and the second parallel module S2 to be turned on, and the third second set of bias voltages (Vgsh <3>, vbsh < 3), the first set of bias voltages (Vgth <1>, vbth < 1), and the second first set of bias voltages (Vgth <2>, vbth <2 >) may be respectively (-2.5V ), thereby controlling the third parallel module S3, the first parallel module T1, and the second parallel module T2 to be turned off.

If the channel between the first input/output port ANT1 and the second output port RX2 is turned on, the second first set of bias voltages (Vgth <2>, vbth <2 >), the first second set of bias voltages (Vgsh <1>, vbsh <1 >), and the third second set of bias voltages (Vgsh <3>, vbsh <3 >) may be respectively (2.5V, 0V), thereby controlling the second parallel module T2, the first parallel module S1, and the third parallel module S3 to be turned on, and the second set of bias voltages (Vgsh <2>, vbsh <2 >), the first set of bias voltages (Vgth <1>, vbth <1 >), and the third first set of bias voltages (Vgth <3>, vbth <3 >) may be respectively (-2.5V ), thereby controlling the second parallel module S2, the first parallel module T1, and the third parallel module T3 to be turned off.

If the channel between the first input/output port ANT1 and the first output port RX1 is turned on, the first number first set of bias voltages (Vgth <1>, vbth <1 >), the second number second set of bias voltages (Vgsh <2>, vbsh <2 >), and the third number second set of bias voltages (Vgsh <3>, vbsh <3 >) may be respectively (2.5V, 0V) to control the first series module T1, the second parallel module S2, and the third parallel module S3 to be turned on, and the first number second set of bias voltages (Vgsh <1>, vbsh <1 >), the second number first set of bias voltages (Vgth <2>, vbth <2 >), and the third number first set of bias voltages (Vgth <3>, vbth <3 >) may be (-2.5V ) to control the first parallel module S1, the second parallel module T2, and the third series module T3 to be turned off.

The embodiment of the application can form a single-pole three-throw circuit (SP 3T) through the positive and negative voltage generating circuit, the logic control circuit and the radio frequency switch, thereby realizing the provision of a high-power asymmetric single-pole three-throw switch and improving the power capacity and the linearity of the radio frequency switch.

It should be understood that the above examples are illustrative and are not intended to encompass all possible implementations encompassed by the claims. Various modifications and changes may be made in the above embodiments without departing from the scope of the disclosure. Likewise, the individual features of the above embodiments can also be combined arbitrarily to form further embodiments of the application which may not be explicitly described. Therefore, the above examples merely represent several embodiments of the present application and do not limit the scope of protection of the patent of the present application.

Claims (10)

1. A radio frequency switch, comprising a switch stack module coupled between a first signal transmission port and a second signal transmission port;

The switch stack module comprises a series module and a parallel module, wherein the series module is connected between the first signal transmission port and the second signal transmission port, the parallel module is connected between the second signal transmission port and the ground, and one of the series module and the parallel module is disconnected during the conduction period of the other.

2. The radio frequency switch of claim 1, wherein the series module and the parallel module each comprise an switch bonded store.

3. The radio frequency switch of claim 1 or 2, wherein the first signal transmission port comprises a first input output port and the second signal transmission port comprises a first output port;

The radio frequency switch comprises a first switch stack module coupled between the first input and output port and the first output port, wherein the first switch stack module comprises a first series module and a first parallel module;

The first series module is connected between the first input and output ports and the first output port, the first parallel module is connected between the first output port and the ground, and one of the first series module and the first parallel module is disconnected during the conduction period of the other.

4. The radio frequency switch of claim 3, wherein the second signal transmission port further comprises a second output port;

The radio frequency switch further comprises a second switch stack module coupled between the first input and output port and the second output port, wherein the second switch stack module comprises a second series module and a second parallel module;

The second series module is connected between the first input and output port and the second output port, the second parallel module is connected between the second output port and the ground, one of the second series module and the second parallel module is disconnected during the conduction period of the other one, and other switch bonded store modules are disconnected during the conduction period of any one of the first switch stack module and the second switch stack module.

5. The radio frequency switch of claim 4, wherein the second signal transmission port further comprises a first input port;

The radio frequency switch further comprises a third switch stack module coupled between the first input and output port and the first input port, wherein the third switch stack module comprises a third serial module and a third parallel module;

The third series module is connected between the first input and output port and the first input port, the third parallel module is connected between the first input port and the ground, one of the third series module and the third parallel module is disconnected during the conduction period of the other one, and other switch bonded store modules are disconnected during the conduction period of any one of the first switch stack module, the second switch stack module and the third switch stack module.

6. The radio frequency switch of claim 5, wherein the first series module, the second series module, and the third series module each comprise at least two switch stacks connected in parallel.

7. The radio frequency switch of claim 6, wherein the first series module and the second series module are each two 16-stage switches bonded store connected in parallel, wherein the width of the conductive channel of each NMOS transistor in the switches bonded store is 1.5mm;

The third series module is two 8-stage openings bonded store connected in parallel, wherein the width of a conducting channel of each NMOS transistor in the openings bonded store is 1.5mm;

The first parallel module and the second parallel module are respectively a single 12-order switch bonded store, wherein the width of a conducting channel of each NMOS transistor in the switch bonded store is 1mm;

The third parallel module is a single 16-stage switch bonded store, where the width of the conductive channel of each NMOS transistor in switch bonded store is 1mm.

8. A radio frequency switch module, characterized in that the radio frequency switch module comprises a positive and negative voltage generating circuit, a logic control circuit and a radio frequency switch according to any one of claims 1-7;

The positive and negative voltage generating circuit is configured to provide a positive bias voltage and a negative bias voltage;

The logic control circuit is configured to determine and output two sets of bias voltages according to the positive bias voltage and the negative bias voltage under the control of a logic control signal, so that a series module and a parallel module in any switch stack module of the radio frequency switch are respectively disconnected during the next conduction period of the two sets of bias voltages under the control of the two sets of bias voltages.

9. The radio frequency switch module of claim 8, wherein the two sets of bias voltages comprise a first set of bias voltages and a second set of bias voltages;

The first group of bias voltages comprises a series gate bias voltage and a series body bias voltage, wherein the series gate bias voltage is used for being provided for the gates of the NMOS transistors in the series modules, and the series body bias voltage is used for being provided for the substrates of the NMOS transistors in the series modules so as to control the series modules to be connected or disconnected;

The second set of bias voltages includes a parallel gate bias voltage for providing to gates of NMOS transistors in the parallel block and a parallel body bias voltage for providing to a substrate of NMOS transistors in the parallel block to control the parallel block to turn on or off.

10. The radio frequency switch module of claim 8, wherein the first set of bias voltages includes a first set of bias voltages, a second set of bias voltages, and a third set of bias voltages;

The second set of bias voltages includes a first second set of bias voltages, a second set of bias voltages, and a third second set of bias voltages;

The first bias voltage group is used for being provided for a first parallel module in a first switch stack module of the radio frequency switch so as to control the first parallel module to be switched on or switched off;

The second group of bias voltages are used for being provided for a second parallel module in a second switch stack module of the radio frequency switch so as to control the second parallel module to be switched on or off;

the third group of bias voltages are used for being provided for a third serial module in a third switch stack module of the radio frequency switch to control the third serial module to be turned on or off, and the third group of bias voltages are used for being provided for a third parallel module in the third switch stack module of the radio frequency switch to control the third parallel module to be turned on or off.